Power integration module, charger and vehicle

Abstract

The utility model relates to a power integration module, a charger and a vehicle, the power integration module comprises a power factor correction circuit, a three-phase resonance circuit and a direct current conversion circuit, the input end of the power factor correction circuit is used for connecting a three-phase alternating current power grid, and the input end of the three-phase resonance circuit is connected with the output end of the power factor correction circuit; the direct current conversion circuit is connected with the output end of the three-phase resonance circuit, the three-phase resonance circuit is added between the power factor correction circuit and the direct current conversion circuit, and the three-phase resonance circuit can improve the conversion efficiency and the power density, so that the conversion efficiency of the power integration module is improved.

Description

Technical Field

[0001] This application relates to the field of electronic technologies, and particularly to a power integration module, a charger, and a vehicle. Background Art

[0002] In recent years, under the green development concept of energy conservation and emission reduction, the electric vehicle industry has developed vigorously. During the electrification process of passenger vehicles, commercial vehicles, etc., higher requirements for vehicle energy conservation have emerged.

[0003] However, the power integration module still has an unsatisfactory conversion efficiency, which is not conducive to further improving energy conservation. Summary of the Utility Model

[0004] Embodiments of this application provide a power integration module, a charger, and a vehicle, which improve the conversion efficiency of the power integration module to at least partially solve the above technical problems.

[0005] To achieve the above objective, according to the first aspect of this application, a power integration module is provided. The power integration module includes a power factor correction circuit, a three-phase resonant circuit, and a DC conversion circuit. The input end of the power factor correction circuit is used to connect to a three-phase AC power grid; the input end of the three-phase resonant circuit is connected to the output end of the power factor correction circuit; the DC conversion circuit is connected to the output end of the three-phase resonant circuit.

[0006] According to the second aspect of this application, a charger is provided. The charger includes the above-mentioned power integration module.

[0007] According to the third aspect of this application, a vehicle is further provided. The vehicle includes the above-mentioned power integration module, or the vehicle includes the above-mentioned charger.

[0008] The power integration module, charger, and vehicle of the embodiments of this application increase the three-phase resonant circuit between the power factor correction circuit and the DC conversion circuit. The three-phase resonant circuit can improve the conversion efficiency and power density, thereby improving the conversion efficiency of the power integration module.

[0009] Other features and advantages of this application will be described in detail in the subsequent specific implementation section. Description of the Drawings

[0010] To more clearly illustrate the technical solutions in the embodiments of this application, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the following drawings are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative efforts.

[0011] To more fully understand the present application and its beneficial effects, the following description will be made in conjunction with the accompanying drawings, in which the same reference numerals in the following description denote the same parts.

[0012] Figure 1 is a schematic diagram of the overall structure of the power integration module provided in the exemplary embodiment of the present disclosure;

[0013] Figure 2 is a cross-sectional view of the interior of the power integration module provided in the exemplary embodiment of the present disclosure;

[0014] Figure 3 is a perspective view of the power integration module provided in the exemplary embodiment of the present disclosure, wherein the power factor correction circuit, the three-phase resonant circuit, and the DC conversion circuit are installed in the housing;

[0015] Figure 4 is Figure 3 the top view of;

[0016] Figure 5 is the top view of the power integration module provided in the exemplary embodiment of the present disclosure, wherein the power factor correction circuit is installed on the power factor correction substrate;

[0017] Figure 6 is the top view of the power integration module provided in the exemplary embodiment of the present disclosure, wherein the front-end processing module is installed on the front-end processing substrate;

[0018] Figure 7 is the top view of the power integration module provided in the exemplary embodiment of the present disclosure, wherein the back-end processing module is installed on the back-end processing substrate;

[0019] Figure 8 is the top view of the power integration module provided in the exemplary embodiment of the present disclosure, wherein the first conversion unit is installed on the first DC conversion substrate;

[0020] Figure 9 is the top view of the power integration module provided in the exemplary embodiment of the present disclosure, wherein the third conversion unit is installed on the third DC conversion substrate.

[0021] Explanation of reference numerals:

[0022] 10. Power factor correction circuit; 11. First arm; 12. Second arm; 13. Third arm; 14. Fourth arm; 15. Filter unit;

[0023] 20. Three-phase resonant circuit; 21. Front-end processing module; 211. Fifth bridge arm; 212. Sixth bridge arm; 213. Seventh bridge arm; 22. Three-phase resonant module; 23. Back-end processing module; 231. Eighth bridge arm; 232. Ninth bridge arm; 233. Tenth bridge arm;

[0024] 30. DC conversion circuit; 31. First conversion unit; 32. Second conversion unit; 33. Third conversion unit; 310. First DC conversion transistor group; 330. Third DC conversion transistor group;

[0025] 50. Housing; 501. Partition beam; 510. Power factor correction substrate; 521. Front-end processing substrate; 523. Back-end processing substrate; 531. First DC conversion substrate; 533. Third DC conversion substrate; 534. Third DC conversion power terminal; 535. Detection pin; 536. Current sharing resistor; 537. Third sub-DC conversion detection terminal; 538. Fourth sub-DC conversion detection terminal;

[0026] 600. Power terminal; 610. Power factor correction power terminal; 620 / 630. Three-phase resonant power terminal; 640. First DC conversion power terminal;

[0027] Detection terminal 700; 710. Power factor correction detection terminal; 720 / 730. Three-phase resonant detection terminal; 740. First DC conversion detection terminal;

[0028] NTC, thermistor. Detailed implementation manners

[0029] Next, the technical solutions in the embodiments of the present application will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative efforts shall fall within the protection scope of the present application.

[0030] The present application provides a power integration module, as Figure 1 shown. The power integration module includes a power factor correction circuit 10, a three-phase resonant circuit 20, and a DC conversion circuit 30. The input end of the power factor correction circuit 10 is used to connect to a three-phase AC power grid; the input end of the three-phase resonant circuit 20 is connected to the output end of the power factor correction circuit 10; the DC conversion circuit 30 is connected to the output end of the three-phase resonant circuit 20.

[0031] It can be understood that in the power integration module of the embodiment of the present application, by adding a three-phase resonant circuit 20 between the power factor correction circuit 10 and the DC conversion circuit 30, the three-phase resonant circuit 20 can improve the conversion efficiency and power density, thereby improving the conversion efficiency of the power integration module.

[0032] Optionally, as Figure 2 shown, the power factor correction circuit 10 includes a first bridge arm 11, a second bridge arm 12, and a third bridge arm 13 connected in parallel; the midpoint of the first bridge arm 11, i.e., AC1, is used to connect to the first live wire LA of the three-phase AC power grid, the midpoint of the second bridge arm 12, i.e., AC2, is used to connect to the second live wire LB of the three-phase AC power grid, and the midpoint of the third bridge arm 13, i.e., AC3, is used to connect to the third live wire LC of the three-phase AC power grid.

[0033] Optionally, the power factor correction circuit 10 further includes a fourth bridge arm 14 connected in parallel with the third bridge arm 13, and the midpoint of the fourth bridge arm 14, i.e., AC4, is used to connect to the fourth live wire LD of the three-phase AC power grid; wherein, the fourth live wire LD is one of the first live wire LA, the second live wire LB, and the third live wire LC.

[0034] It should be noted that by controlling the first bridge arm 11 to the fourth bridge arm 14, the input AC current waveform can be made to track the input AC voltage waveform, thereby realizing the sinusoidalization of the AC current and synchronizing it with the AC input voltage, which improves the power utilization efficiency. The filtering unit 15 can reduce the harmonic pollution in the power grid.

[0035] Optionally, as Figure 2 shown, the first bridge arm 11 includes a first transistor Q1 and a second transistor Q2. The first pole of the first transistor Q1 is connected to the first output terminal of the power factor correction circuit 10. The second pole of the first transistor Q1 is connected to the first pole of the second transistor Q2 and the first live wire LA. The second pole of the second transistor Q2 is connected to the second output terminal of the power factor correction circuit 10. The second bridge arm 12 includes a third transistor Q3 and a fourth transistor Q4. The first pole of the third transistor Q3 is connected to the first pole of the first transistor Q1. The second pole of the third transistor Q3 is connected to the first pole of the fourth transistor Q4 and the second live wire LB. The second pole of the fourth transistor Q4 is connected to the second pole of the second transistor Q2. The third bridge arm 13 includes a fifth transistor Q5 and a sixth transistor Q6. The first pole of the fifth transistor Q5 is connected to the first pole of the third transistor Q3. The second pole of the fifth transistor Q5 is connected to the first pole of the sixth transistor Q6 and the third live wire LC. The second pole of the sixth transistor Q6 is connected to the second pole of the fourth transistor Q4.

[0036] Optionally, the fourth bridge arm 14 includes a seventh transistor Q7 and an eighth transistor Q8. The first pole of the seventh transistor Q7 is connected to the first pole of the fifth transistor Q5. The second pole of the seventh transistor Q7 is connected to the first pole of the eighth transistor Q8 and the fourth live wire LD. The second pole of the eighth transistor Q8 is connected to the second pole of the sixth transistor Q6.

[0037] It should be noted that the control poles of the transistors can be connected to the corresponding control terminals of the control circuit to reduce harmonic distortion, improve the power factor, and thus improve the efficiency and stability.

[0038] Optionally, as Figure 2 shown, the power factor correction circuit 10 further includes a filtering unit 15. The filtering unit 15 includes a first capacitor C1 and a second capacitor C2. One end of the first capacitor C1 is connected to the first pole of the seventh transistor Q7. One end of the second capacitor C2 is connected to the other end of the first capacitor C1 and the neutral wire N. The other end of the second capacitor C2 is connected to the second pole of the eighth transistor Q8.

[0039] It should be noted that the filtering unit 15 is to improve the power factor of the circuit, reduce the distortion of the input current, and make the current waveform better follow the voltage waveform, so that the load is closer to a pure resistive load.

[0040] Optionally, as Figure 2 shown, the three-phase resonant circuit 20 includes a front-end processing module 21, a three-phase resonant module 22, and a back-end processing module 23. The input end of the front-end processing module 21 is connected to the output end of the power factor correction circuit 10. The input end of the three-phase resonant module 22 is connected to the output end of the front-end processing module 21. The input end of the back-end processing module 23 is connected to the output end of the three-phase resonant module 22, and the output end of the back-end processing module 23 is connected to the DC conversion circuit 30.

[0041] It should be noted that the front-end processing module 21 is used to convert the DC voltage (DC+1, DC-1) output by the power factor correction circuit 10 into corresponding three-phase alternating current. The three-phase resonant module 22 is used to improve the conversion efficiency of the three-phase alternating current output by the front-end processing module 21. The back-end processing module 23 is used to convert the three-phase alternating current output by the three-phase resonant module 22 into corresponding DC voltage (HV+, HV- or DC+3, DC-3).

[0042] Optionally, as Figure 2 shown, the front-end processing module 21 includes a fifth bridge arm 211, a sixth bridge arm 212, and a seventh bridge arm 213 connected between the two output ends of the power factor correction circuit 10.

[0043] Optionally, as Figure 2As shown, the output end of the fifth bridge arm 211, i.e., AC5, is connected to the first input end of the three-phase resonant module 22, the output end of the sixth bridge arm 212, i.e., AC6, is connected to the second input end of the three-phase resonant module 22, and the output end of the seventh bridge arm 213, i.e., AC7, is connected to the third input end of the three-phase resonant module 22.

[0044] It should be noted that the voltage between the two output ends of the power factor correction circuit 10 can also be expressed as DC+2 and DC-2.

[0045] Optionally, as Figure 2 shown, the fifth bridge arm 211 includes a ninth transistor Q9 and a tenth transistor Q10. The first pole of the ninth transistor Q9 is connected to the first input end of the front-end processing module 21. The second pole of the ninth transistor Q9 is connected to the first pole of the tenth transistor Q10 and the first input end of the three-phase resonant module 22. The second pole of the tenth transistor Q10 is connected to the second input end of the front-end processing module 21. The sixth bridge arm 212 includes an eleventh transistor Q11 and a twelfth transistor Q12. The first pole of the eleventh transistor Q11 is connected to the first pole of the ninth transistor Q9. The second pole of the eleventh transistor Q11 is connected to the first pole of the twelfth transistor Q12 and the second input end of the three-phase resonant module 22. The second pole of the twelfth transistor Q12 is connected to the second pole of the tenth transistor Q10. The seventh bridge arm 213 includes a thirteenth transistor Q13 and a fourteenth transistor Q14. The first pole of the thirteenth transistor Q13 is connected to the first pole of the eleventh transistor Q11. The second pole of the thirteenth transistor Q13 is connected to the first pole of the fourteenth transistor Q14 and the third input end of the three-phase resonant module 22. The second pole of the fourteenth transistor Q14 is connected to the second pole of the twelfth transistor Q12.

[0046] It should be noted that the control poles of the transistors can be connected to the corresponding control ends of the control circuit to achieve high efficiency, low harmonic distortion and high power density of the power integration module.

[0047] Optionally, the three-phase resonant module 22 includes a first transformer group, a second transformer group and a third transformer group. The first input end of the first transformer group is electrically connected to the fifth bridge arm 211. The second input end of the second transformer group is electrically connected to the sixth bridge arm 212. The third input end of the third transformer group is electrically connected to the seventh bridge arm 213.

[0048] Optionally, the first output end of the first transformer group is electrically connected to the first input end of the back-end processing module 23. The second output end of the second transformer group is electrically connected to the second input end of the back-end processing module 23. The third output end of the third transformer group is electrically connected to the third input end of the back-end processing module 23.

[0049] Optionally, the first transformer group includes a first transformer TA1, a first inductor L1, and a fourth inductor L4. One end of the primary winding of the first transformer TA1 is electrically connected to the fifth bridge arm 211, and the other end is electrically connected to the first inductor L1. One end of the secondary winding of the first transformer TA1 is electrically connected to the first input terminal of the backend processing module 23, and the other end is electrically connected to the fourth inductor L4.

[0050] Optionally, the first transformer group further includes a third capacitor C3 and a sixth capacitor C6. One end of the primary winding of the first transformer TA1 is electrically connected to the fifth bridge arm 211 through the third capacitor C3, and one end of the secondary winding of the first transformer TA1 is electrically connected to the first input terminal of the backend processing module 23 through the sixth capacitor C6.

[0051] Optionally, the second transformer group includes a second transformer TA2, a second inductor L2, and a fifth inductor L5. One end of the primary winding of the second transformer TA2 is electrically connected to the sixth bridge arm 212, and the other end is connected to the second inductor L2. One end of the secondary winding of the second transformer TA2 is electrically connected to the second input terminal of the backend processing module 23, and the other end is electrically connected to the fifth inductor L5.

[0052] Optionally, the second transformer group further includes a fourth capacitor C4 and a seventh capacitor C7. One end of the primary winding of the second transformer TA2 is electrically connected to the sixth bridge arm 212 through the fourth capacitor C4, and one end of the secondary winding of the second transformer TA2 is connected to the second input terminal of the backend processing module 23 through the seventh capacitor C7.

[0053] Optionally, the third transformer group includes a third transformer TA3, a third inductor L3, and a sixth inductor L6. One end of the primary winding of the third transformer TA3 is electrically connected to the seventh bridge arm 213, and the other end is electrically connected to the third inductor L3. One end of the secondary winding of the third transformer TA3 is connected to the third input terminal of the backend processing module 23, and the other end is connected to the sixth inductor L6; wherein, the third inductor L3 is electrically connected to the first inductor L1 and the second inductor L2; the sixth inductor L6 is electrically connected to the fourth inductor L4 and the fifth inductor L5.

[0054] Optionally, the third transformer group further includes a fifth capacitor C5 and an eighth capacitor C8. One end of the primary winding of the third transformer TA3 is connected to the seventh bridge arm 213 through the fifth capacitor C5, and one end of the secondary winding of the third transformer TA3 is connected to the third input terminal of the backend processing module 23 through the eighth capacitor C8.

[0055] Optionally, the backend processing module 23 includes an eighth bridge arm 231, a ninth bridge arm 232, and a tenth bridge arm 233; the eighth bridge arm 231 is electrically connected to the first transformer bank, the ninth bridge arm 232 is electrically connected to the second transformer bank, and the tenth bridge arm 233 is electrically connected to the third transformer bank.

[0056] Optionally, as Figure 2 shown, the three-phase resonant module 22 includes a third capacitor C3, a fourth capacitor C4, a fifth capacitor C5, a sixth capacitor C6, a seventh capacitor C7, an eighth capacitor C8, a first inductor L1, a second inductor L2, a third inductor L3, a fourth inductor L4, a fifth inductor L5, a sixth inductor L6, a first transformer TA1, a second transformer TA2, and a third transformer TA3; one end of the primary winding of the first transformer TA1 is connected to the first input terminal of the three-phase resonant module 22 through the third capacitor C3, the other end of the primary winding of the first transformer TA1 is connected to one end of the second inductor L2 through the first inductor L1, one end of the secondary winding of the first transformer TA1 is connected to the first input terminal of the backend processing module 23 through the sixth capacitor C6, and the other end of the secondary winding of the first transformer TA1 is connected to one end of the fifth inductor L5 through the fourth inductor L4; one end of the primary winding of the second transformer TA2 is connected to the second input terminal of the three-phase resonant module 22 through the fourth capacitor C4, the other end of the primary winding of the second transformer TA2 is connected to the other end of the second inductor L2, one end of the secondary winding of the second transformer TA2 is connected to the second input terminal of the backend processing module 23 through the seventh capacitor C7, and the other end of the secondary winding of the second transformer TA2 is connected to the other end of the fifth inductor L5; one end of the primary winding of the third transformer TA3 is connected to the third input terminal of the three-phase resonant module 22 through the fifth capacitor C5, the other end of the primary winding of the third transformer TA3 is connected to one end of the second inductor L2 through the third inductor L3, one end of the secondary winding of the third transformer TA3 is connected to the third input terminal of the backend processing module 23 through the eighth capacitor C8, and the other end of the secondary winding of the third transformer TA3 is connected to one end of the fifth inductor L5 through the sixth inductor L6.

[0057] It should be noted that the three-phase resonant module 22 is also called a three-phase LLC harmonic circuit, which uses resonance characteristics to improve efficiency and reduce switching losses.

[0058] Optionally, as Figure 2 shown, the backend processing module 23 includes an eighth bridge arm 231, a ninth bridge arm 232, and a tenth bridge arm 233; the eighth bridge arm 231 is electrically connected to the first transformer bank, the ninth bridge arm 232 is electrically connected to the second transformer bank, and the tenth bridge arm 233 is electrically connected to the third transformer bank.

[0059] The midpoint of the eighth bridge arm 231, i.e., AC8, is the first input terminal of the backend processing module 23. The midpoint of the ninth bridge arm 232, i.e., AC9, is the second input terminal of the backend processing module 23. The midpoint of the tenth bridge arm 233, i.e., AC10, is the third input terminal of the backend processing module 23. One end of the ninth capacitor C9 serves as the first output terminal of the backend processing module 23, and the other end of the ninth capacitor C9 serves as the second output terminal of the backend processing module 23.

[0060] It should be noted that through the eighth bridge arm 231, the ninth bridge arm 232, and the tenth bridge arm 233, the three-phase alternating current output by the three-phase resonance module 22 can be converted into a corresponding direct current voltage.

[0061] Optionally, as Figure 2 shown, the eighth bridge arm 231 includes a fifteenth transistor Q15 and a sixteenth transistor Q16. The first pole of the fifteenth transistor Q15 is connected to the first input terminal of the DC conversion circuit 30. The second pole of the fifteenth transistor Q15 is connected to the first pole of the sixteenth transistor Q16 and the first transformer group and serves as the midpoint of the eighth bridge arm 231. The second pole of the sixteenth transistor Q16 is connected to the second input terminal of the DC conversion circuit 30. The ninth bridge arm 232 includes a seventeenth transistor Q17 and an eighteenth transistor Q18. The first pole of the seventeenth transistor Q17 is connected to the first input terminal of the DC conversion circuit 30. The second pole of the seventeenth transistor Q17 is connected to the first pole of the eighteenth transistor Q18 and the second transformer group and serves as the midpoint of the ninth bridge arm 232. The second pole of the eighteenth transistor Q18 is connected to the second input terminal of the DC conversion circuit 30. The tenth bridge arm 233 includes a nineteenth transistor Q19 and a twentieth transistor Q20. The first pole of the nineteenth transistor Q19 is connected to the first input terminal of the DC conversion circuit 30. The second pole of the nineteenth transistor Q19 is connected to the first pole of the twentieth transistor Q20 and the third transformer group and serves as the midpoint of the tenth bridge arm 233. The second pole of the twentieth transistor Q20 is connected to the second input terminal of the DC conversion circuit 30.

[0062] Optionally, as Figure 2 shown, the backend processing module 23 further includes a ninth capacitor C9, and the ninth capacitor C9 is connected in parallel with the eighth bridge arm 231, the ninth bridge arm 232, and the tenth bridge arm 233.

[0063] It should be noted that the control poles of the transistors can be connected to the corresponding control terminals of the control circuit to achieve high efficiency, low harmonic distortion, and high power density of the power integration module.

[0064] Optionally, as Figure 2As shown, the DC conversion circuit 30 includes a first conversion unit 31, a second conversion unit 32, and a third conversion unit 33. The input end of the first conversion unit 31 is connected to the output end of the three-phase resonant circuit 20; the input end of the second conversion unit 32 is connected to the output end of the first conversion unit 31; the input end of the third conversion unit 33 is connected to the output end of the second conversion unit 32, and the output end of the third conversion unit 33 is used to connect to the battery pack.

[0065] It should be noted that the first conversion unit 31 is used to convert the DC voltage output by the three-phase resonant circuit 20 into the corresponding alternating current, the second conversion unit 32 is used to convert the alternating current output by the first conversion unit 31 into the corresponding alternating current, and the third conversion unit 33 is used to convert the alternating current output by the second conversion unit 32 into the corresponding DC voltage (LV+, LV-).

[0066] Optionally, as Figure 2 shown, the first conversion unit 31 includes a twenty-first transistor Q21, a twenty-second transistor Q22, a twenty-third transistor Q23, and a twenty-fourth transistor Q24; the first pole of the twenty-first transistor Q21 is connected to the first output end of the three-phase resonant circuit 20, the second pole of the twenty-first transistor Q21 is connected to the first pole of the twenty-second transistor Q22 and the first input end of the second conversion unit 32, i.e., AC11, the second pole of the twenty-second transistor Q22 is connected to the second output end of the three-phase resonant circuit 20, the first pole of the twenty-third transistor Q23 is connected to the first pole of the twenty-first transistor Q21, the second pole of the twenty-third transistor Q23 and the first pole of the twenty-fourth transistor Q24 and the second input end of the second conversion unit 32, i.e., AC12, are connected, and the second pole of the twenty-fourth transistor Q24 is connected to the second pole of the twenty-second transistor Q22; the second conversion unit 32 includes a fourth transformer TB. One end of the primary winding of the fourth transformer TB serves as the first input end of the second conversion unit 32, the other end of the primary winding of the fourth transformer TB serves as the second input end of the second conversion unit 32, and the secondary winding of the fourth transformer TB is connected to the third conversion unit 33.

[0067] It should be noted that the control poles of the transistors can be connected to the corresponding control ends of the control circuit to improve the conversion efficiency.

[0068] Optionally, as Figure 2As shown in the figure, the third conversion unit 33 includes a seventh inductor L7, a tenth capacitor C10, a twenty-fifth transistor Q25, and a twenty-ninth transistor Q29; a first pole of the twenty-fifth transistor Q25 is connected to one end of a secondary winding of a fourth transformer TB, a second pole of the twenty-fifth transistor Q25 is connected to a first end of the tenth capacitor C10 and a first pole of the twenty-ninth transistor Q29, a second pole of the twenty-ninth transistor Q29 is connected to the other end of the secondary winding of the fourth transformer TB, and the seventh inductor L7 is connected between a second end of the tenth capacitor C10 and a tap of the secondary winding of the fourth transformer TB.

[0069] It should be noted that control poles of the transistors can be connected to corresponding control terminals of a control circuit to obtain a suitable voltage for charging the battery pack BP1.

[0070] Optionally, as Figure 2 shown in the figure, the third conversion unit 33 further includes at least one of a twenty-sixth transistor Q26, a twenty-seventh transistor Q27, and a twenty-eighth transistor Q28 connected in parallel with the twenty-fifth transistor Q25; the third conversion unit 33 further includes at least one of a thirtieth transistor Q30, a thirty-first transistor Q31, and a thirty-second transistor Q32 connected in parallel with the twenty-ninth transistor Q29.

[0071] It should be noted that control poles of the transistors in the third conversion unit 33 can be connected to corresponding control terminals of the control circuit through resistors.

[0072] Optionally, as Figure 3 and Figure 4 shown in the figure, the power integration module further includes a housing 50, and the housing 50 further includes a plurality of substrates and a plurality of partition beams 501. The substrates can be ceramic copper-clad substrates. Replacing the pins of single-tube devices with copper foils widens the current path width, and the current flow direction can be adjusted to make the magnetic fluxes generated by the current counteract more in the reverse direction, so that the voltage spikes of the power integration module are correspondingly reduced and the switching losses are reduced.

[0073] Among them, the power factor correction circuit 10, the three-phase resonant circuit (20), and the DC conversion circuit (30) are respectively installed on corresponding substrates. Partition beams 501 are provided between adjacent substrates. In this way, the power factor correction circuit 10, the three-phase resonant circuit (20), and the DC conversion circuit (30) are independently installed on corresponding substrates, and two adjacent ones of the power factor correction circuit 10, the three-phase resonant circuit (20), and the DC conversion circuit (30) are also separated by the partition beams 501, and physical isolation between multiple substrates can be achieved.

[0074] Specifically, the multiple substrates include a power factor correction substrate 510, a three-phase resonance substrate, and a DC conversion substrate. The three-phase resonance substrate includes a front-end processing substrate 521 and a rear-end processing substrate 523 which are spaced apart. The DC conversion substrate includes a first DC conversion substrate 531 and a third DC conversion substrate 533 which are spaced apart.

[0075] Among them, the power factor correction circuit 10 is installed on the power factor correction substrate 510, the front-end processing module 21 and the rear-end processing module 23 are respectively installed on the front-end processing substrate 521 and the rear-end processing substrate 523, and the first conversion unit 31 and the third conversion unit 33 are respectively installed on the first DC conversion substrate 531 and the third DC conversion substrate 533. Moreover, a partition beam 501 is provided between two adjacent ones of the power factor correction substrate 510, the front-end processing substrate 521, the rear-end processing substrate 523, the first DC conversion substrate 531, and the third DC conversion substrate 533.

[0076] Please refer to Figure 4 , the power integration module has an outer side and a center surrounded by the outer side. The outer side includes a first long side A and a second long side C which are opposite in the width direction of the power integration module.

[0077] The power factor correction circuit 10 and the first conversion unit 31 are arranged along the length direction of the power integration module (i.e., the extending direction of the first long side A) and are close to the first long side A. The front-end processing module 21 and the rear-end processing module 23 are arranged along the length direction of the power integration module and are close to the second long side C. The third conversion unit 33 is located at one end of the first conversion unit 31 away from the power factor correction circuit 10 and is located at one end of the rear-end processing module 23 away from the front-end processing module 21. Such an arrangement can reasonably utilize the space of the housing 50. At the same time, it is convenient for the electrical connection between the power factor correction circuit 10 and the front-end processing module 21, convenient for the electrical connection between the front-end processing module 21 and the rear-end processing module 23, and convenient for the electrical connection between the first conversion unit 31 and the third conversion unit 33.

[0078] At least one of the substrates of the power factor correction substrate 510, the front-end processing substrate 521, the rear-end processing substrate 523, and the first DC conversion substrate 531 is provided with a plurality of power terminals 600 and a plurality of detection terminals 700. Among them, the plurality of power terminals 600 and the plurality of detection terminals 700 are electrically connected to at least one of the power factor correction circuit 10, the front-end processing module 21, the rear-end processing module 23, and the first conversion unit 31. Moreover, the plurality of power terminals 600 are close to the outer side, and the plurality of detection terminals 700 are close to the center.

[0079] Optionally, as Figure 5As shown, the power factor correction circuit 10 includes a first bridge arm 11, a second bridge arm 12, a third bridge arm 13, and a fourth bridge arm 14 that are connected in parallel. The third bridge arm 13 is located on the side of the first bridge arm 11 and the second bridge arm 12 close to the fourth bridge arm 14. The first bridge arm 11 includes a first transistor Q1 and a second transistor Q2, the second bridge arm 12 includes a third transistor Q3 and a fourth transistor Q4, the third bridge arm 13 includes a fifth transistor Q5 and a sixth transistor Q6, and the fourth bridge arm 14 includes a seventh transistor Q7 and an eighth transistor Q8.

[0080] A plurality of power factor correction power terminals 610 (i.e., power terminals), a plurality of power factor correction detection terminals 710 (i.e., detection terminals), and a thermistor NTC are provided on the power factor correction substrate 510. Among them, the ends of the plurality of power factor correction power terminals 610 far from the plurality of power factor correction detection terminals 710 are located outside the power factor correction substrate 510, and the orthographic projection of the plurality of power factor correction detection terminals 710 on the power factor correction substrate 510 is located within the boundary of the power factor correction substrate 510. In this way, the distance between the plurality of power factor correction power terminals 610 and the plurality of power factor correction detection terminals 710 can be ensured, and electromagnetic interference can be reduced.

[0081] The plurality of power factor correction power terminals 610 are arranged close to the first long side A, which is convenient for layout. The plurality of power factor correction power terminals 610 are electrically connected to the first bridge arm 11, the second bridge arm 12, the third bridge arm 13, and the fourth bridge arm 14, and include a plurality of positive DC terminals 610-1, a plurality of AC terminals 610-2, and a plurality of negative DC terminals 610-3. The AC terminals 610-2 are power signal input terminals, and the positive DC terminals 610-1 and the negative DC terminals 610-3 are power signal output terminals. Among them, the third bridge arm 13 and the fourth bridge arm 14 are electrically connected to the same power factor correction power terminals 610, which can save the number of power factor correction power terminals 610.

[0082] A plurality of power factor correction detection terminals 710 are arranged close to the second long side C, which is convenient for layout. Specifically, the plurality of power factor correction detection terminals 710 include a plurality of first sub-power factor correction detection terminals 710-1 electrically connected to a plurality of first poles (e.g., source poles) of the first bridge arm 11, the second bridge arm 12, and the third bridge arm 13, a plurality of second sub-power factor correction detection terminals 710-2 electrically connected to a plurality of third poles (e.g., gate poles) of the first bridge arm 11, the second bridge arm 12, and the third bridge arm 13, a plurality of third sub-power factor correction detection terminals 710-3 electrically connected to a plurality of first poles (e.g., source poles) of the fourth bridge arm 14, and a plurality of fourth sub-power factor correction detection terminals 710-4 electrically connected to a plurality of third poles (e.g., gate poles) of the fourth bridge arm 14. Among them, the plurality of first sub-power factor correction detection terminals 710-1 and the plurality of second sub-power factor correction detection terminals 710-2 are arranged along the length direction of the power integration module, and the plurality of second sub-power factor correction detection terminals 710-2 are located on one side of the plurality of first sub-power factor correction detection terminals 710-1 in the width direction of the power integration module. Moreover, the plurality of third sub-power factor correction detection terminals 710-3 and the plurality of fourth sub-power factor correction detection terminals 710-4 are arranged along the length direction of the power integration module and are located at one end of the plurality of first sub-power factor correction detection terminals 710-1 and the plurality of second sub-power factor correction detection terminals 710-2 in the length direction of the power integration module. In this way, the layout is further facilitated.

[0083] The thermistor NTC is arranged close to the second long side C and is located between two adjacent groups of the first sub-power factor correction detection terminals 710-1 and the second sub-power factor correction detection terminals 710-2. In this way, the layout is convenient.

[0084] Optionally, as Figure 6 shown, the front-end processing module 21 includes a fifth bridge arm 211, a sixth bridge arm 212, and a seventh bridge arm 213 connected in parallel. The fifth bridge arm 211, the sixth bridge arm 212, and the seventh bridge arm 213 form a processing bridge arm group. The fifth bridge arm 211 includes a ninth transistor Q9 and a tenth transistor Q10, the sixth bridge arm 212 includes an eleventh transistor Q11 and a twelfth transistor Q12, and the seventh bridge arm 213 includes a thirteenth transistor Q13 and a fourteenth transistor Q14.

[0085] On the front-end processing substrate 521, there are provided a plurality of three-phase resonant power terminals 620 (i.e., power terminals), a plurality of three-phase resonant detection terminals 720 (i.e., detection terminals), and a thermistor NTC. Among them, the ends of the plurality of three-phase resonant power terminals 620 that are far from the plurality of three-phase resonant detection terminals 720 are located outside the front-end processing substrate 521, and the orthographic projection of the plurality of three-phase resonant detection terminals 720 on the front-end processing substrate 521 is located within the boundary of the front-end processing substrate 521. In this way, the distance between the plurality of three-phase resonant power terminals 620 and the plurality of three-phase resonant detection terminals 720 can be ensured, and electromagnetic interference can be reduced.

[0086] The plurality of three-phase resonant power terminals 620 are arranged close to the second long side C, which is convenient for layout. The plurality of three-phase resonant power terminals 620 are electrically connected to the processing bridge arm group (i.e., the fifth bridge arm 211, the sixth bridge arm 212, and the seventh bridge arm 213 connected in parallel), and include a plurality of positive DC terminals 620-1, a plurality of AC terminals 620-2, and a plurality of negative DC terminals 620-3. The AC terminals 620-2 are power signal input terminals, and the positive DC terminals 620-1 and the negative DC terminals 620-3 are power signal output terminals.

[0087] The plurality of three-phase resonant detection terminals 720 are arranged close to the first long side A, which is convenient for layout. Specifically, the plurality of three-phase resonant detection terminals 720 include a plurality of first sub-three-phase resonant detection terminals 720-1 electrically connected to a plurality of first poles (e.g., source poles) of the processing bridge arm group, and a plurality of second sub-three-phase resonant detection terminals 720-2 electrically connected to a plurality of third poles of the corresponding processing bridge arm group. Among them, the plurality of first sub-three-phase resonant detection terminals 720-1 and the plurality of second sub-three-phase resonant detection terminals 720-2 are arranged along the length direction of the power integration module, and the plurality of second sub-three-phase resonant detection terminals 720-2 are located on one side of the plurality of first sub-three-phase resonant detection terminals 720-1 in the width direction of the power integration module. In this way, the layout is further facilitated.

[0088] The thermistor NTC is arranged close to the first long side A and is located between two adjacent sets of first sub-three-phase resonant detection terminals 720-1 and second sub-three-phase resonant detection terminals 720-2. In this way, the layout is convenient.

[0089] Optionally, as Figure 7 shown, the back-end processing module 23 includes an eighth bridge arm 231, a ninth bridge arm 232, and a tenth bridge arm 233 connected in parallel. The eighth bridge arm 231, the ninth bridge arm 232, and the tenth bridge arm 233 form a processing bridge arm group. The eighth bridge arm 231 includes a fifteenth transistor Q15 and a sixteenth transistor Q16, the ninth bridge arm 232 includes a seventeenth transistor Q17 and an eighteenth transistor Q18, and the tenth bridge arm 233 includes a nineteenth transistor Q19 and a twentieth transistor Q20.

[0090] On the back-end processing substrate 53, there are provided a plurality of three-phase resonant power terminals 630 (i.e., power terminals), a plurality of three-phase resonant detection terminals 730 (i.e., detection terminals), and a thermistor NTC. Among them, the ends of the plurality of three-phase resonant power terminals 630 far from the plurality of three-phase resonant detection terminals 730 are located outside the back-end processing substrate 53, and the orthographic projection of the plurality of three-phase resonant detection terminals 730 on the processing substrate is located within the boundary of the back-end processing substrate 53. In this way, the distance between the plurality of three-phase resonant power terminals 630 and the plurality of three-phase resonant detection terminals 730 can be ensured, and electromagnetic interference can be reduced.

[0091] The plurality of three-phase resonant power terminals 630 are arranged close to the second long side C, which is convenient for layout. The plurality of three-phase resonant power terminals 630 are electrically connected to the corresponding processing bridge arm groups (i.e., the eighth bridge arm 231, the ninth bridge arm 232, and the ninetieth bridge arm 233 connected in parallel), and include a plurality of positive DC terminals 630-1, a plurality of AC terminals 630-2, and a plurality of negative DC terminals 630-3. The AC terminals 630-2 are power signal input terminals, and the positive DC terminals 630-1 and the negative DC terminals 630-3 are power signal output terminals.

[0092] The plurality of three-phase resonant detection terminals 730 are arranged close to the first long side A, which is convenient for layout. Specifically, the plurality of three-phase resonant detection terminals 730 include a plurality of first sub-three-phase resonant detection terminals 730-1 electrically connected to the corresponding first poles (e.g., source poles) of the processing bridge arm groups, and a plurality of second sub-three-phase resonant detection terminals 730-2 electrically connected to the corresponding third poles of the processing bridge arm groups. Among them, the plurality of first sub-three-phase resonant detection terminals 730-1 and the plurality of second sub-three-phase resonant detection terminals 730-2 are arranged along the length direction of the power integration module, and the plurality of second sub-three-phase resonant detection terminals 730-2 are located on one side of the plurality of first sub-three-phase resonant detection terminals 730-1 in the width direction of the power integration module. In this way, the layout is further facilitated.

[0093] The thermistor NTC is arranged close to the first long side A and is located between two adjacent groups of first sub-three-phase resonant detection terminals 730-1 and second sub-three-phase resonant detection terminals 730-2. In this way, the layout is convenient.

[0094] Optionally, as Figure 8 shown, the first conversion unit 31 includes two first DC conversion transistor groups 310 connected in parallel. One of the first DC conversion transistor groups 310 includes a twenty-first transistor Q21 and a twenty-second transistor Q22 connected in series, and the other first DC conversion transistor group 310 includes a twenty-third transistor Q23 and a twenty-fourth transistor Q24 connected in series.

[0095] A plurality of first DC conversion power terminals 640 (i.e., power terminals), a plurality of first DC conversion detection terminals 740 (i.e., detection terminals), and a thermistor NTC are provided on the first DC conversion substrate 531. Among them, the ends of the plurality of first DC conversion power terminals 640 far from the plurality of first DC conversion detection terminals 740 are located outside the first DC conversion substrate 531, and the orthographic projection of the plurality of first DC conversion detection terminals 740 on the first DC conversion substrate 531 is located within the boundary of the first DC conversion substrate 531. In this way, the distance between the plurality of first DC conversion power terminals 640 and the plurality of first DC conversion detection terminals 740 can be ensured, and electromagnetic interference can be reduced.

[0096] The plurality of first DC conversion power terminals 640 are close to the first long side A, which is convenient for layout. The plurality of first DC conversion power terminals 640 are electrically connected to the plurality of first DC conversion transistor groups 310, and include a plurality of positive DC terminals 640-1, a plurality of AC terminals 640-2, and a plurality of negative DC terminals 640-3. The AC terminals 640-2 are power signal input terminals, and the positive DC terminals 640-1 and the negative DC terminals 640-3 are power signal output terminals.

[0097] The plurality of first DC conversion detection terminals 740 are close to the second long side C, which is convenient for layout. The plurality of first DC conversion detection terminals 740 are electrically connected to the plurality of first DC conversion transistor groups 310. Specifically, the plurality of first DC conversion detection terminals 740 include a plurality of first sub-DC conversion detection terminals 740-1 electrically connected to the plurality of first poles (e.g., source poles) of the plurality of first DC conversion transistor groups 310, and a plurality of second sub-DC conversion detection terminals 740-2 electrically connected to the plurality of third poles (e.g., gate poles) of the plurality of first DC conversion transistor groups 310; among them, the plurality of first sub-DC conversion detection terminals 740-1 and the plurality of second sub-DC conversion detection terminals 740-2 are arranged along the length direction of the power integration module, and the plurality of second sub-DC conversion detection terminals 740-2 are located on one side of the plurality of first sub-DC conversion detection terminals 740-1 in the width direction of the power integration module. In this way, the layout is further facilitated.

[0098] Optionally, as Figure 9 shown, the third conversion unit 33 includes two third DC conversion transistor groups 330 oppositely arranged in the width direction of the power integration module, which is convenient for layout. One of the third DC conversion transistor groups 330 includes a twenty-fifth transistor (Q25), a twenty-sixth transistor Q26, a twenty-seventh transistor Q27, and a twenty-eighth transistor Q28 connected in parallel, and the other third DC conversion transistor group 330 includes a twenty-ninth transistor (Q29), a thirtieth transistor Q30, a thirty-first transistor Q31, and a thirty-second transistor Q32 connected in parallel.

[0099] A plurality of third DC conversion power terminals 534 are provided on the third DC conversion substrate 533, and the plurality of third DC conversion power terminals 534 are electrically connected to the plurality of third DC conversion transistor groups 330. The plurality of third DC conversion power terminals 534 are located on the side of the third DC conversion substrate 533 away from the first conversion unit 31, which is convenient for layout. Among them, the plurality of third DC conversion power terminals 534 include a plurality of positive DC terminals 534-1 and a plurality of negative DC terminals 534-2. The positive DC terminal 534-1 is a power signal input terminal, and the negative DC terminal 534-2 is a power signal output terminal.

[0100] The third DC conversion substrate 533 is provided with detection pins 535 on the side of each third DC conversion transistor group 330 away from the other third DC conversion transistor group 330, and the output detection pins 535 are electrically connected to the first pole (for example, source), second pole (for example, drain), and third pole (for example, gate) of the third DC conversion transistor group 330. In this way, it is convenient to perform detection.

[0101] The third DC conversion substrate 533 is also provided with a thermistor NTC on the side of each third DC conversion transistor group 330 away from the other third DC conversion transistor group 330. The thermistor NTC is located on the side of the detection pin 535 away from the third DC conversion transistor group 330. In this way, it is convenient for layout.

[0102] The third DC conversion substrate 533 is provided with a plurality of current-sharing resistors 536 and third sub-DC conversion detection terminals 537 on the side of each third DC conversion transistor group 330 close to the other third DC conversion transistor group 330. The third sub-DC conversion detection terminals 537 are electrically connected to the third pole of the corresponding third DC conversion transistor group 330 through the corresponding plurality of current-sharing resistors 536. In this way, current sharing can be performed through the current-sharing resistors 536, and the third pole can be detected through the third sub-DC conversion detection terminals 537.

[0103] On one side of each third DC conversion transistor group 330 of the third DC conversion substrate 533 close to another third DC conversion transistor group 330, a fourth sub-DC conversion detection terminal 538 is further provided, and the fourth sub-DC conversion detection terminal 538 is electrically connected to the first pole of the corresponding third DC conversion transistor group 330; wherein, a plurality of current sharing resistors 536 are arranged on the fourth sub-DC conversion detection terminal 538. In this way, the first pole can be detected through the fourth sub-DC conversion detection terminal 538, and the installation space of the current sharing resistor 536 can be saved. An embodiment of the present application further provides a charger, and the charger includes the above-mentioned power integration module. It can be understood that since the charger of the embodiment of the present application includes the above-mentioned power integration module, the three-phase resonant circuit 20 can also be added between the power factor correction circuit 10 and the DC conversion circuit 30. The three-phase resonant circuit 20 can improve the conversion efficiency and power density, thereby improving the conversion efficiency of the power integration module.

[0104] An embodiment of the present application further provides a vehicle, and the vehicle includes the above-mentioned power integration module or charger. It can be understood that since the charger of the embodiment of the present application includes the above-mentioned power integration module or charger, the three-phase resonant circuit 20 can also be added between the power factor correction circuit 10 and the DC conversion circuit 30. The three-phase resonant circuit 20 can improve the conversion efficiency and power density, thereby improving the conversion efficiency of the power integration module.

[0105] In the description of the present application, the terms "first" and "second" are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include one or more features. In the description of the present application, the meaning of "a plurality" is two or more, unless otherwise specifically defined.

[0106] In the above embodiments, the descriptions of the respective embodiments have their own emphases. For the parts not detailed in a certain embodiment, reference may be made to the relevant descriptions of other embodiments.

[0107] Among the embodiments, embodiments, and related technical features of the present application, they can be combined and replaced with each other without conflict.

[0108] The above are only the preferred embodiments of the present application, and do not impose any form of limitation on the present application. However, any simple modification, equivalent change, and modification made to the above embodiments based on the technical essence of the present application without departing from the content of the technical solution of the present application still fall within the scope of the technical solution of the present application.

Claims

1. A power integration module, characterized in that, The power integration module includes: A power factor correction circuit (10), the input end of the power factor correction circuit (10) is used to connect to a three-phase AC power grid; A three-phase resonant circuit (20), the input end of the three-phase resonant circuit (20) is connected to the output end of the power factor correction circuit (10); A DC conversion circuit (30), the DC conversion circuit (30) is connected to the output end of the three-phase resonant circuit (20).

2. The power integration module according to claim 1, wherein The power factor correction circuit (10) includes a first arm (11), a second arm (12), and a third arm (13) connected in parallel; The midpoint of the first arm (11) is used to connect to the first live wire (LA) of the three-phase AC power grid, the midpoint of the second arm (12) is used to connect to the second live wire (LB) of the three-phase AC power grid, and the midpoint of the third arm (13) is used to connect to the third live wire (LC) of the three-phase AC power grid.

3. The power integration module according to claim 2, wherein The power factor correction circuit (10) further includes a fourth arm (14) connected in parallel with the third arm (13), the midpoint of the fourth arm (14) is used to connect to the fourth live wire (LD) of the three-phase AC power grid; Wherein, the fourth live wire (LD) is one of the first live wire (LA), the second live wire (LB), and the third live wire (LC).

4. The power integration module according to claim 3, characterized in that, The first arm (11) includes a first transistor (Q1) and a second transistor (Q2), the first pole of the first transistor (Q1) is connected to the first output end of the power factor correction circuit (10), the second pole of the first transistor (Q1) is connected to the first pole of the second transistor (Q2) and the first live wire (LA), and the second pole of the second transistor (Q2) is connected to the second output end of the power factor correction circuit (10); The second arm (12) includes a third transistor (Q3) and a fourth transistor (Q4), the first pole of the third transistor (Q3) is connected to the first pole of the first transistor (Q1), the second pole of the third transistor (Q3) is connected to the first pole of the fourth transistor (Q4) and the second live wire (LB), and the second pole of the fourth transistor (Q4) is connected to the second pole of the second transistor (Q2); The third arm (13) includes a fifth transistor (Q5) and a sixth transistor (Q6), the first pole of the fifth transistor (Q5) is connected to the first pole of the third transistor (Q3), the second pole of the fifth transistor (Q5) is connected to the first pole of the sixth transistor (Q6) and the third live wire (LC), and the second pole of the sixth transistor (Q6) is connected to the second pole of the fourth transistor (Q4).

5. The power integration module according to claim 4, wherein The fourth bridge arm (14) includes a seventh transistor (Q7) and an eighth transistor (Q8). A first pole of the seventh transistor (Q7) is connected to a first pole of the fifth transistor (Q5). A second pole of the seventh transistor (Q7) is connected to a first pole of the eighth transistor (Q8) and the fourth live wire (LD). A second pole of the eighth transistor (Q8) is connected to a second pole of the sixth transistor (Q6).

6. The power integration module according to claim 5, characterized in that, The power factor correction circuit (10) further includes a filtering unit (15), and the filtering unit (15) includes: A first capacitor (C1), one end of the first capacitor (C1) is connected to the first pole of the seventh transistor (Q7); A second capacitor (C2), one end of the second capacitor (C2) is connected to the other end of the first capacitor (C1) and the neutral line (N), and the other end of the second capacitor (C2) is connected to the second pole of the eighth transistor (Q8).

7. The power integration module according to claim 1, wherein The three-phase resonant circuit (20) includes: A front-end processing module (21), an input end of the front-end processing module (21) is connected to an output end of the power factor correction circuit (10); A three-phase resonant module (22), an input end of the three-phase resonant module (22) is connected to an output end of the front-end processing module (21); A back-end processing module (23), an input end of the back-end processing module (23) is connected to an output end of the three-phase resonant module (22), and an output end of the back-end processing module (23) is connected to the DC conversion circuit (30).

8. The power integration module according to claim 7, characterized in that, The front-end processing module (21) includes a fifth bridge arm (211), a sixth bridge arm (212), and a seventh bridge arm (213) connected between two output ends of the power factor correction circuit (10).

9. The power integration module according to claim 8, wherein An output end of the fifth bridge arm (211) is connected to a first input end of the three-phase resonant module (22). An output end of the sixth bridge arm (212) is connected to a second input end of the three-phase resonant module (22). An output end of the seventh bridge arm (213) is connected to a third input end of the three-phase resonant module (22).

10. The power integration module according to claim 9, wherein The fifth bridge arm (211) includes a ninth transistor (Q9) and a tenth transistor (Q10). A first pole of the ninth transistor (Q9) is connected to a first input end of the front-end processing module (21). A second pole of the ninth transistor (Q9) is connected to a first pole of the tenth transistor (Q10) and the first input end of the three-phase resonant module (22). A second pole of the tenth transistor (Q10) is connected to a second input end of the front-end processing module (21); The sixth bridge arm (212) includes an eleventh transistor (Q11) and a twelfth transistor (Q12). A first pole of the eleventh transistor (Q11) is connected to a first pole of the ninth transistor (Q9). A second pole of the eleventh transistor (Q11) is connected to a first pole of the twelfth transistor (Q12) and a second input terminal of the three-phase resonance module (22). A second pole of the twelfth transistor (Q12) is connected to a second pole of the tenth transistor (Q10). The seventh bridge arm (213) includes a thirteenth transistor (Q13) and a fourteenth transistor (Q14). A first pole of the thirteenth transistor (Q13) is connected to a first pole of the eleventh transistor (Q11). A second pole of the thirteenth transistor (Q13) is connected to a first pole of the fourteenth transistor (Q14) and a third input terminal of the three-phase resonance module (22). A second pole of the fourteenth transistor (Q14) is connected to a second pole of the twelfth transistor (Q12).

11. The power integration module according to claim 8, wherein, The three-phase resonance module (22) includes a first transformer group, a second transformer group, and a third transformer group. A first input terminal of the first transformer group is electrically connected to the fifth bridge arm (211). A second input terminal of the second transformer group is electrically connected to the sixth bridge arm (212). A third input terminal of the third transformer group is electrically connected to the seventh bridge arm (213).

12. The power integration module according to claim 11, wherein A first output terminal of the first transformer group is electrically connected to a first input terminal of the backend processing module (23). A second output terminal of the second transformer group is electrically connected to a second input terminal of the backend processing module (23). A third output terminal of the third transformer group is electrically connected to a third input terminal of the backend processing module (23).

13. The power integration module according to claim 12, wherein, The first transformer group includes a first transformer (TA1), a first inductor (L1), and a fourth inductor (L4). One end of a primary winding of the first transformer (TA1) is electrically connected to the fifth bridge arm (211), and the other end is connected to the first inductor (L1). One end of a secondary winding of the first transformer (TA1) is electrically connected to a first input terminal of the backend processing module (23), and the other end is connected to the fourth inductor (L4).

14. The power integration module according to claim 13, wherein, The first transformer group further includes a third capacitor (C3) and a sixth capacitor (C6). One end of the primary winding of the first transformer (TA1) is electrically connected to the fifth bridge arm (211) through the third capacitor (C3). One end of the secondary winding of the first transformer (TA1) is electrically connected to a first input terminal of the backend processing module (23) through the sixth capacitor (C6).

15. The power integration module according to claim 14, wherein, The second transformer group includes a second transformer (TA2), a second inductor (L2), and a fifth inductor (L5). One end of the primary winding of the second transformer (TA2) is electrically connected to the sixth bridge arm (212), and the other end is connected to the second inductor (L2). One end of the secondary winding of the second transformer (TA2) is electrically connected to the second input terminal of the backend processing module (23), and the other end is connected to the fifth inductor (L5).

16. The power integration module according to claim 15, characterized in that, The second transformer group further includes a fourth capacitor (C4) and a seventh capacitor (C7). One end of the primary winding of the second transformer (TA2) is electrically connected to the sixth bridge arm (212) through the fourth capacitor (C4), and one end of the secondary winding of the second transformer (TA2) is connected to the second input terminal of the backend processing module (23) through the seventh capacitor (C7).

17. The power integration module according to claim 16, wherein The third transformer group includes a third transformer (TA3), a third inductor (L3), and a sixth inductor (L6). One end of the primary winding of the third transformer (TA3) is electrically connected to the seventh bridge arm (213), and the other end is connected to the third inductor (L3). One end of the secondary winding of the third transformer (TA3) is connected to the third input terminal of the backend processing module (23), and the other end is connected to the sixth inductor (L6); Wherein, the third inductor (L3) is electrically connected to the first inductor (L1) and the second inductor (L2); the sixth inductor (L6) is electrically connected to the fourth inductor (L4) and the fifth inductor (L5).

18. The power integration module according to claim 17, wherein The third transformer group further includes a fifth capacitor (C5) and an eighth capacitor (C8). One end of the primary winding of the third transformer (TA3) is connected to the seventh bridge arm (213) through the fifth capacitor (C5), and one end of the secondary winding of the third transformer (TA3) is connected to the third input terminal of the backend processing module (23) through the eighth capacitor (C8).

19. The power integration module according to claim 12, wherein The backend processing module (23) includes an eighth bridge arm (231), a ninth bridge arm (232), and a tenth bridge arm (233); The eighth bridge arm (231) is electrically connected to the first transformer group, the ninth bridge arm (232) is electrically connected to the second transformer group, and the tenth bridge arm (233) is electrically connected to the third transformer group.

20. The power integration module according to claim 19, characterized in that, The eighth bridge arm (231) includes a fifteenth transistor (Q15) and a sixteenth transistor (Q16). The first pole of the fifteenth transistor (Q15) is connected to the first input terminal of the DC conversion circuit (30), the second pole of the fifteenth transistor (Q15) is connected to the first pole of the sixteenth transistor (Q16) and the first transformer group, and the second pole of the sixteenth transistor (Q16) is connected to the second input terminal of the DC conversion circuit (30); The ninth bridge arm (232) includes a seventeenth transistor (Q17) and an eighteenth transistor (Q18). A first pole of the seventeenth transistor (Q17) is connected to a first input terminal of the DC conversion circuit (30). A second pole of the seventeenth transistor (Q17) is connected to a first pole of the eighteenth transistor (Q18) and the second transformer bank. A second pole of the eighteenth transistor (Q18) is connected to a second input terminal of the DC conversion circuit (30). The tenth bridge arm (233) includes a nineteenth transistor (Q19) and a twentieth transistor (Q20). A first pole of the nineteenth transistor (Q19) is connected to a first input terminal of the DC conversion circuit (30). A second pole of the nineteenth transistor (Q19) is connected to a first pole of the twentieth transistor (Q20) and the third transformer bank. A second pole of the twentieth transistor (Q20) is connected to a second input terminal of the DC conversion circuit (30).

21. The power integration module according to claim 19, wherein The backend processing module (23) further includes a ninth capacitor (C9). The ninth capacitor (C9) is connected in parallel with the eighth bridge arm (231), the ninth bridge arm (232), and the tenth bridge arm (233).

22. The power integration module according to claim 1, wherein, The DC conversion circuit (30) includes: A first conversion unit (31), an input terminal of the first conversion unit (31) is connected to an output terminal of the three-phase resonant circuit (20). A second conversion unit (32), an input terminal of the second conversion unit (32) is connected to an output terminal of the first conversion unit (31). A third conversion unit (33), an input terminal of the third conversion unit (33) is connected to an output terminal of the second conversion unit (32), and an output terminal of the third conversion unit (33) is used to connect to a battery pack.

23. The power integration module according to claim 22, wherein, The first conversion unit (31) includes a twenty-first transistor (Q21), a twenty-second transistor (Q22), a twenty-third transistor (Q23), and a twenty-fourth transistor (Q24). A first pole of the twenty-first transistor (Q21) is connected to a first output terminal of the three-phase resonant circuit (20). A second pole of the twenty-first transistor (Q21) is connected to a first pole of the twenty-second transistor (Q22) and a first input terminal of the second conversion unit (32). A second pole of the twenty-second transistor (Q22) is connected to a second output terminal of the three-phase resonant circuit (20). A first pole of the twenty-third transistor (Q23) is connected to the first pole of the twenty-first transistor (Q21). A second pole of the twenty-third transistor (Q23), a first pole of the twenty-fourth transistor (Q24), and a second input terminal of the second conversion unit (32) are connected. A second pole of the twenty-fourth transistor (Q24) is connected to the second pole of the twenty-second transistor (Q22). The second conversion unit (32) includes a fourth transformer (TB). One end of the primary winding of the fourth transformer (TB) serves as the first input terminal of the second conversion unit (32), and the other end of the primary winding of the fourth transformer (TB) serves as the second input terminal of the second conversion unit (32). The secondary winding of the fourth transformer (TB) is connected to the third conversion unit (33).

24. The power integration module according to claim 23, wherein The third conversion unit (33) includes a seventh inductor (L7), a tenth capacitor (C10), a twenty-fifth transistor (Q25), and a twenty-ninth transistor (Q29); The first pole of the twenty-fifth transistor (Q25) is connected to one end of the secondary winding of the fourth transformer (TB). The second pole of the twenty-fifth transistor (Q25) is connected to the first end of the tenth capacitor (C10) and the first pole of the twenty-ninth transistor (Q29). The second pole of the twenty-ninth transistor (Q29) is connected to the other end of the secondary winding of the fourth transformer (TB). The seventh inductor (L7) is connected between the second end of the tenth capacitor (C10) and the tap of the secondary winding of the fourth transformer (TB).

25. The power integration module according to claim 24, wherein, The third conversion unit (33) further includes at least one of a twenty-sixth transistor (Q26), a twenty-seventh transistor (Q27), and a twenty-eighth transistor (Q28) connected in parallel with the twenty-fifth transistor (Q25); The third conversion unit (33) further includes at least one of a thirtieth transistor (Q30), a thirty-first transistor (Q31), and a thirty-second transistor (Q32) connected in parallel with the twenty-ninth transistor (Q29).

26. The power integration module according to claim 1, characterized in that, It further includes a housing (50). The power factor correction circuit (10), the three-phase resonance circuit (20), and the DC conversion circuit (30) are respectively installed in the housing (50). The housing (50) includes a plurality of partition beams (501); wherein, partition beams (501) are provided between two adjacent ones of the power factor correction circuit (10), the three-phase resonance circuit (20), and the DC conversion circuit (30).

27. The power integration module according to claim 26, wherein The housing (50) further includes a power factor correction substrate (510), a three-phase resonance substrate, and a DC conversion substrate; The power factor correction circuit (10) is installed on the power factor correction substrate (510); at least part of the three-phase resonance circuit (20) is installed on the three-phase resonance substrate, and at least part of the DC conversion circuit (30) is installed on the DC conversion substrate; Wherein, partition beams (501) are provided between two adjacent ones of the power factor correction substrate (510), the three-phase resonance substrate, and the DC conversion substrate.

28. The power integration module according to claim 27, wherein The three-phase resonance substrate includes a front-end processing substrate (521) and a rear-end processing substrate (523) arranged at intervals; The three-phase resonant circuit (20) includes a front-end processing module (21) and a back-end processing module (23) that are electrically connected to each other. The front-end processing module (21) and the back-end processing module (23) are respectively mounted on the front-end processing substrate (521) and the back-end processing substrate (523); Wherein, a partition beam (501) is provided between two adjacent ones of the power factor correction substrate (510), the front-end processing substrate (521), the back-end processing substrate (523), and the DC conversion substrate.

29. The power integration module according to claim 28, wherein, The DC conversion substrate includes a first DC conversion substrate (531) and a third DC conversion substrate (533) that are arranged at intervals; The DC conversion circuit (30) includes a first conversion unit (31) and a third conversion unit (33) that are electrically connected to each other. The first conversion unit (31) and the third conversion unit (33) are respectively mounted on the first DC conversion substrate (531) and the third DC conversion substrate (533); Wherein, a partition beam (501) is provided between two adjacent ones of the power factor correction substrate (510), the front-end processing substrate (521), the back-end processing substrate (523), the first DC conversion substrate (531), and the third DC conversion substrate (533).

30. The power integration module according to claim 29, wherein, The power integration module has a first long side (A) and a second long side (C) that are opposite to each other in the width direction of the power integration module; wherein, the power factor correction circuit (10) and the first conversion unit (31) are arranged along the length direction of the power integration module and are close to the first long side (A), the front-end processing module (21) and the back-end processing module (23) are arranged along the length direction of the power integration module and are close to the second long side (C), and the third conversion unit (33) is located at one end of the first conversion unit (31) away from the power factor correction circuit (10) and is located at one end of the back-end processing module (23) away from the front-end processing module (21).

31. The power integration module according to claim 30, wherein The power integration module has an outer side and a center surrounded by the outer side. The outer side includes the first long side (A) and the second long side (C); at least one of the power factor correction substrate (510), the front-end processing substrate (521), the back-end processing substrate (523), and the first DC conversion substrate is provided with a plurality of power terminals (600) and a plurality of detection terminals (700); wherein, the plurality of power terminals (600) and the plurality of detection terminals (700) are electrically connected to at least one of the power factor correction circuit (10), the front-end processing module (21), the back-end processing module (23), the first conversion unit (31), and the third conversion unit (33), and, the plurality of power terminals (600) are close to the outer side, and the plurality of detection terminals (700) are close to the center.

32. The power integration module according to claim 31, wherein The ends of the plurality of power terminals (600) that are away from the plurality of detection terminals (700) are located outside the substrate, and the orthographic projections of the plurality of detection terminals (700) on the substrate are located within the boundaries of the substrate.

33. The power integration module according to claim 32, characterized in that, The power factor correction circuit (10) includes a first bridge arm (11), a second bridge arm (12), a third bridge arm (13), and a fourth bridge arm (14) connected in parallel; the plurality of power terminals (600) include a plurality of power factor correction power terminals (610), and the plurality of power factor correction power terminals (610) are provided on the power factor correction substrate (510), and the plurality of power factor correction power terminals (610) are electrically connected to the first bridge arm (11), the second bridge arm (12), the third bridge arm (13), and the fourth bridge arm (14); wherein, the third bridge arm (13) is located on the side of the first bridge arm (11) and the second bridge arm (12) close to the fourth bridge arm (14), and the third bridge arm (13) and the fourth bridge arm (14) are electrically connected to the same power factor correction power terminal (610).

34. The power integration module according to claim 33, wherein The third conversion unit (33) includes two third DC conversion transistor groups (330) oppositely arranged in the width direction of the power integration module; a plurality of third DC conversion power terminals (534) are provided on the third DC conversion substrate (533), and the plurality of power terminals (600) include the plurality of third DC conversion power terminals (534); wherein, the plurality of third DC conversion power terminals (534) are electrically connected to the plurality of third DC conversion transistor groups (330) and are located on the side of the third DC conversion substrate (533) away from the first conversion unit (31).

35. The power integration module according to claim 34, wherein The third DC conversion substrate (533) is provided with output detection pins (535) on the side of each third DC conversion transistor group (330) away from the other third DC conversion transistor group (330), and the output detection pins (535) are electrically connected to the first pole, the second pole, and the third pole of the third DC conversion transistor group (330).

36. The power integration module according to claim 35, wherein The third DC conversion substrate (533) is provided with a plurality of current sharing resistors (536) and third sub-DC conversion detection terminals (537) on the side of each third DC conversion transistor group (330) close to the other third DC conversion transistor group (330), and the third sub-DC conversion detection terminals (537) are electrically connected to the third pole of the corresponding third DC conversion transistor group (330) through the corresponding plurality of current sharing resistors (536).

37. The power integration module according to claim 36, characterized in that, On one side of each of the third DC conversion transistor groups (330) of the third DC conversion substrate (533) close to another third DC conversion transistor group (330), a fourth sub-DC conversion detection terminal (538) is further provided, and the fourth sub-DC conversion detection terminal (538) is electrically connected to the first pole of the corresponding third DC conversion transistor group (330); wherein, a plurality of current sharing resistors (536) are arranged on the fourth sub-DC conversion detection terminal (538).

38. A charger, characterized in that, The charger includes the power integration module according to any one of claims 1-37.

39. A vehicle, characterized in that, The vehicle includes the power integration module according to any one of claims 1-37, or the vehicle includes the charger according to claim 38.

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