Carrying table device and laser annealing equipment

Abstract

The utility model discloses a carrying table device and laser annealing equipment. The carrying table device comprises a carrying table, a temperature sensor and a controller. The carrying table is used for carrying a wafer; the temperature sensor and the wafer carried by the carrying table can be arranged at an interval, and the temperature sensor is used for detecting the temperature of the wafer carried by the carrying table so as to generate a temperature signal; the first air blowing part is provided with a first air blowing hole, the first air blowing hole can be communicated with a shielding gas source, and the first air blowing hole is used for blowing shielding gas towards the wafer carried by the carrying table so as to reduce the temperature of the wafer; the controller is in communication connection with the temperature sensor, and the controller is used for receiving the temperature signal so as to adjust the flow and the flow velocity of the shielding gas output to the first blowing hole by the shielding gas source. The carrying platform device can conveniently and quickly realize temperature detection and control of the wafer.

Description

Technical Field

[0001] The present application relates to the technical field of laser annealing, and in particular to a stage device and a laser annealing apparatus. Background Art

[0002] In the manufacturing process of semiconductor devices, an ion implantation process is performed on the back surface of the wafer of certain devices, the source electrode or the drain electrode. The ion implantation process can cause serious damage to the silicon lattice, resulting in the doped impurity ions not occupying the correct lattice positions, and some doped regions do not have effective electrical activity.

[0003] After the ion implantation process, the wafer needs to be heated. After the wafer is heated to a high temperature state, the impurity atoms will diffuse in the lattice and occupy the substitution positions to achieve activation. During the subsequent rapid cooling, the atoms in the lattice are rearranged to achieve the required lattice structure. This heating process is called an annealing process.

[0004] Laser annealing is a process method for heat-treating materials using pulsed lasers. Due to advantages such as high instantaneous temperature, short action time, and small heat-affected zone, laser annealing can well meet the process requirements of electrical activity activation and thus becomes one of the key processes in the chip manufacturing process.

[0005] During the laser annealing process of the wafer, the wafer needs to be cooled. In the related art, the temperature detection and control of the wafer are not convenient. Summary of the Utility Model

[0006] To this end, the present application provides a stage device that can conveniently and quickly achieve temperature detection and control of the wafer.

[0007] The present application also provides a laser annealing apparatus having the above stage device.

[0008] The stage device according to the first aspect embodiment of the present application includes:

[0009] A stage for carrying the wafer;

[0010] A temperature sensor that can be spaced apart from the wafer carried by the stage, and the temperature sensor is used to detect the temperature of the wafer carried by the stage to generate a temperature signal;

[0011] A first blowing member provided with a first blowing hole, the first blowing hole can be communicated with a protective gas source, and the first blowing hole is used to blow protective gas toward the wafer carried by the stage to reduce the temperature of the wafer;

[0012] A controller, communicatively connected to the temperature sensor, is configured to receive the temperature signal to adjust the flow rate and velocity of the protective gas output from the protective gas source to the first air blowing hole.

[0013] The stage device according to the embodiment of the present application has at least the following beneficial effects: The temperature sensor is spaced from the wafer carried by the stage. The temperature sensor does not need to contact the wafer, and the installation position of the temperature sensor is relatively flexible, making temperature measurement more convenient. After the controller obtains the temperature signal, it can control the protective gas source to output the protective gas with appropriate flow rate and velocity, which is beneficial to the temperature control of the wafer, and the temperature control of the wafer is more convenient and fast.

[0014] According to some embodiments of the present application, a plurality of the temperature sensors are provided. Let the detection position of the temperature sensor on the wafer be the first position, and the first positions of any two of the temperature sensors are different.

[0015] According to some embodiments of the present application, the first position of one of the temperature sensors is the center position of the wafer, and the first positions of the remaining temperature sensors are spaced around the center position of the wafer.

[0016] According to some embodiments of the present application, let the surface of the stage for carrying the wafer be the carrying surface. The stage is provided with a first mounting hole, and the first mounting hole penetrates the carrying surface; the temperature sensor is located in the first mounting hole and is connected to the stage.

[0017] According to some embodiments of the present application, the temperature sensor includes an infrared temperature sensor or a thermal imaging temperature sensor.

[0018] According to some embodiments of the present application, a pumping member is further included. The pumping member is provided with a pumping hole for pumping the protective gas passing through the wafer.

[0019] According to some embodiments of the present application, let the position of the wafer carried by the stage be the second position, and the pumping hole and the first air blowing hole are respectively located on opposite sides of the second position.

[0020] According to some embodiments of the present application, a second air blowing member is further included. The second air blowing member is provided with a second air blowing hole. The first air blowing hole is used to blow the protective gas toward the upper surface of the wafer carried by the stage, and the second air blowing hole is used to blow the protective gas toward the lower surface of the wafer carried by the stage.

[0021] According to some embodiments of the present application, a lifting module is further included. The lifting module includes:

[0022] A nozzle, which is used to adsorb or release the wafer. Let the surface of the stage for carrying the wafer be the bearing surface. The stage is provided with a second mounting hole, and the second mounting hole penetrates the bearing surface. At least a part of the nozzle is located in the second mounting hole;

[0023] A driving assembly, which is used to drive the nozzle to move up and down, so that the upper end surface of the nozzle is higher than or not higher than the bearing surface.

[0024] According to a laser annealing device of the second aspect embodiment of the present application, it includes:

[0025] The above-mentioned stage device;

[0026] A laser device, which is used to generate laser to anneal the wafer carried by the stage.

[0027] According to the laser annealing device of the embodiment of the present application, it has at least the following beneficial effects: By using the above-mentioned stage device, the temperature detection and control of the wafer can be conveniently and quickly realized, and the annealing effect of the laser annealing device is better.

[0028] The additional aspects and advantages of the present application will be partially given in the following description, partially become obvious from the following description, or be understood through the practice of the present application. Description of the Drawings

[0029] The following will further illustrate the present application in conjunction with the drawings and embodiments, where:

[0030] Figure 1 is a three-dimensional view of the stage device of the embodiment of the present application;

[0031] Figure 2 is Figure 1 a cross-sectional view of the stage device in

[0032] Figure 3 is Figure 2 a partial enlarged view of area I in

[0033] Figure 4 is Figure 2 a partial enlarged view of area II in

[0034] Figure 5 is Figure 2 a partial enlarged view of area III in

[0035] Figure 6 is Figure 1 an exploded view of the stage device in

[0036] Figure 7 is a schematic diagram of the laser annealing device of the embodiment of the present application.

[0037] Reference numerals: stage 100, bearing surface 110, first mounting hole 120, second mounting hole 130;

[0038] Temperature sensor 210;

[0039] First blowing member 310, first blowing hole 311, air extraction member 320, air extraction hole 321, second blowing member 330, second blowing hole 331;

[0040] Lifting module 400, suction nozzle 410, drive assembly 420;

[0041] Controller 500;

[0042] Adapter board 610, turntable 620;

[0043] Laser device 700. Detailed implementation manners

[0044] The embodiments of the present application will be described in detail below. Examples of the embodiments are shown in the accompanying drawings, where the same or similar reference numerals represent the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present application and should not be construed as a limitation of the present application.

[0045] In the description of the present application, it should be understood that the orientation or positional relationship indicated by terms such as up, down, front, back, left, right, etc. is based on the orientation or positional relationship shown in the accompanying drawings. It is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the present application.

[0046] In the description of the present application, the meaning of several is one or more, the meaning of multiple is two or more, greater than, less than, exceeding, etc. are understood as not including the present number, above, below, within, etc. are understood as including the present number. If there is a description of first and second, it is only for the purpose of distinguishing technical features and should not be construed as indicating or implying relative importance or implicitly indicating the quantity of the indicated technical features or implicitly indicating the sequence of the indicated technical features.

[0047] In the description of the present application, unless otherwise clearly defined, words such as setting, installing, connecting, etc. should be understood in a broad sense. Those skilled in the art can reasonably determine the specific meanings of the above words in the present application in combination with the specific content of the technical solution.

[0048] In the description of the present application, the description referring to terms such as "one embodiment", "some embodiments", "schematic embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic expressions of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described can be combined in a suitable manner in any one or more embodiments or examples.

[0049] Referring to Figures 1 to 3 , according to the stage device of the first aspect embodiment of the present application, it includes a stage 100, a temperature sensor 210, a first blowing member 310, and a controller 500. The stage 100 is used to carry a wafer. The temperature sensor 210 can be arranged at an interval from the wafer carried by the stage 100. The temperature sensor 210 is used to detect the temperature of the wafer carried by the stage 100 to generate a temperature signal. The first blowing member 310 is provided with a first blowing hole 311 (referring to Figure 3 ), the first blowing hole 311 can be communicated with a protective gas source, and the first blowing hole 311 is used to blow protective gas towards the wafer carried by the stage 100 to reduce the temperature of the wafer.

[0050] The controller 500 is communicatively connected to the temperature sensor 210. The controller 500 is used to receive the temperature signal to adjust the flow rate and flow velocity of the protective gas output from the protective gas source to the first blowing hole 311.

[0051] According to the stage device of the embodiment of the present application, it has at least the following beneficial effects: The temperature sensor 210 is arranged at an interval from the wafer carried by the stage 100. The temperature sensor 210 does not need to be in contact with the wafer, the installation position of the temperature sensor 210 is relatively flexible, and the temperature measurement is relatively convenient; after the controller 500 obtains the temperature signal, it can control the protective gas source to output a protective gas with a suitable flow rate and flow velocity, which is beneficial to the temperature control of the wafer, and the temperature control of the wafer is relatively convenient and fast.

[0052] Specifically, the protective gas can be an inert gas or nitrogen. The controller 500 can be a programmable logic controller. After receiving the temperature signal, the programmable logic controller compares it with the preset temperature value through a PID control algorithm, and then generates a control signal. The control signal can be an analog signal (such as a current signal or a voltage signal). The control signal is output to a throttle valve or a pressure reducing valve to realize the adjustment of the flow rate and flow velocity of the protective gas output.

[0053] It should be noted that the first blowing hole 311 blows protective gas towards the wafer carried by the stage 100 to reduce the temperature of the wafer, which means that the temperature of the protective gas needs to be lower than the temperature of the wafer.

[0054] Referring toFigure 1 In some embodiments of the present application, a plurality of temperature sensors 210 are provided. Let the detection position of the temperature sensor 210 on the wafer be the first position, and the first positions of any two temperature sensors 210 are different.

[0055] By providing a plurality of temperature sensors 210, the temperatures of multiple positions on the wafer can be detected, so that the temperature detection of the wafer is more comprehensive and accurate.

[0056] Specifically, the number of temperature sensors 210 can be two, three, four or other numbers.

[0057] Referring to Figure 1 In an improved solution of the above embodiment, the first position of one temperature sensor 210 is the central position of the wafer, and the first positions of the remaining temperature sensors 210 are arranged at intervals around the central position of the wafer.

[0058] Using the central position and the peripheral position of the wafer as the first position, the distribution of the first position on the wafer is more uniform and reasonable. Thus, a larger range of temperature detection can be covered with fewer temperature sensors 210, and the temperature detection cost is lower.

[0059] Specifically, referring to Figure 1 In an improved solution of the above embodiment, the first position of one temperature sensor 210 is the central position of the wafer, and the first positions of four temperature sensors 210 are arranged at intervals around the central position of the wafer.

[0060] Referring to Figure 2 In an improved solution of the above embodiment, let the surface of the stage 100 for carrying the wafer be the carrying surface 110. The stage 100 is provided with a first mounting hole 120, and the first mounting hole 120 penetrates the carrying surface 110. The temperature sensor 210 is located in the first mounting hole 120, and the temperature sensor 210 is connected to the stage 100.

[0061] By providing the first mounting hole 120 in the stage 100, and the first mounting hole 120 is used to mount the temperature sensor 210, the installation space can be saved, the structure of the stage device is more compact, and the space occupied by the stage device is smaller.

[0062] In some embodiments of the present application, the temperature sensor 210 includes an infrared temperature sensor or a thermal imaging temperature sensor.

[0063] Both the infrared temperature sensor and the thermal imaging temperature sensor can achieve non-contact temperature detection, and the acquisition costs of the infrared temperature sensor and the thermal imaging temperature sensor are relatively low. Thus, it is beneficial to reduce the equipment cost of the stage device.

[0064] Referring to Figure 2 and Figure 4, in some embodiments of the present application, the stage device further includes an air extraction member 320. The air extraction member 320 is provided with an air extraction hole 321, and the air extraction hole 321 is used for sucking the protective gas passing through the wafer.

[0065] By sucking the protective gas passing through the wafer through the air extraction hole 321, a stable air flow passing through the wafer is easily formed by the protective gas, and the cooling effect of the protective gas is better.

[0066] Refer to Figure 1 , in some embodiments of the present application, the position of the wafer carried by the stage 100 is set as the second position, and the air extraction hole 321 and the first air blowing hole 311 are respectively located on opposite sides of the second position.

[0067] By arranging the air extraction hole 321 and the first air blowing hole 311 on opposite sides of the wafer respectively, after the air flow blown out by the first air blowing hole 311 passes through the wafer, it will be timely sucked away by the air extraction hole 321, and the protective gas that absorbs the heat of the wafer will not stay around the wafer too much, and the cooling effect of the protective gas is better.

[0068] Refer to Figure 2 and Figure 5 , in some embodiments of the present application, the stage device further includes a second air blowing member 330. The second air blowing member 330 is provided with a second air blowing hole 331. The first air blowing hole 311 is used for blowing the protective gas toward the upper surface of the wafer carried by the stage 100, and the second air blowing hole 331 is used for blowing the protective gas toward the lower surface of the wafer carried by the stage 100.

[0069] By blowing the protective gas toward the upper surface and the lower surface of the wafer simultaneously, the cooling of each part of the wafer is more uniform, and the annealing effect of the wafer is better.

[0070] It should be noted that, refer to Figure 2 , the first air blowing hole 311 blows the protective gas to the right, and the protective gas blown out by the first air blowing hole 311 horizontally passes through the upper surface of the wafer. The second air blowing hole 331 blows the protective gas upward.

[0071] Refer to Figure 2 and Figure 6 , in some embodiments of the present application, the stage device further includes a lifting module 400. The lifting module 400 includes a suction nozzle 410 and a driving component 420. The suction nozzle 410 is used for adsorbing or releasing the wafer. The surface of the stage 100 for carrying the wafer is set as the carrying surface 110. The stage 100 is provided with a second mounting hole 130, and the second mounting hole 130 penetrates the carrying surface 110. At least a part of the suction nozzle 410 is located in the second mounting hole 130. The driving component 420 is used for driving the suction nozzle 410 to move up and down so that the upper end surface of the suction nozzle 410 is higher than or not higher than the carrying surface 110.

[0072] When the upper end surface of the nozzle 410 moves upward to a position higher than the bearing surface 110, the nozzle 410 can be used to receive and adsorb the wafer to be annealed, or push the annealed wafer away from the bearing surface 110; when the upper end surface of the nozzle 410 moves downward to a position not higher than the bearing surface 110, the nozzle 410 can place the wafer on the bearing surface 110. That is, by providing the lifting module 400, the stage device can conveniently receive or send away the wafer.

[0073] Specifically, the driving component 420 includes a cylinder. The housing of the cylinder is fixed relative to the stage 100, and the piston rod of the cylinder is connected to the nozzle 410. After the cylinder is ventilated and operates, it can drive the nozzle 410 to move in the vertical direction.

[0074] In another embodiment, the driving component 420 can also include one of a linear motor, an oil cylinder, a motor-driven gear-rack mechanism, a motor-driven crank-slider mechanism, a motor-driven synchronous pulley-synchronous belt mechanism, and a motor-driven sprocket-chain mechanism.

[0075] Refer to Figure 2 and Figure 6 , it should be noted that the stage device usually further includes an adapter plate 610 and a turntable 620. The stage 100 and the lifting module 400 are both installed on the adapter plate 610. The turntable 620 is used to drive the adapter plate 610 to rotate, and further drive the wafer carried by the turntable 620 to rotate. The turntable 620 can use a DD motor.

[0076] Refer to Figure 7 , according to the laser annealing device of the second aspect embodiment of the present application, it includes a stage device and a laser device 700. The laser device 700 is used to generate laser to anneal the wafer carried by the stage 100.

[0077] The laser annealing device according to the embodiment of the present application has at least the following beneficial effects: by using the above-mentioned stage device, the temperature detection and control of the wafer can be conveniently and quickly realized, and the annealing effect of the laser annealing device is better.

[0078] The above has described the embodiments of the present application in detail with reference to the drawings, but the present application is not limited to the above embodiments. Various changes can be made without departing from the purpose of the present application within the knowledge scope of those of ordinary skill in the art. In addition, the embodiments of the present application and the features in the embodiments can be combined with each other without conflict.

Claims

1. A stage device, characterized in that, Comprising: A stage for carrying a wafer; A temperature sensor capable of being disposed at an interval from the wafer carried by the stage, the temperature sensor being configured to detect the temperature of the wafer carried by the stage to generate a temperature signal; A first gas blowing member provided with a first gas blowing hole, the first gas blowing hole being capable of communicating with a protective gas source, the first gas blowing hole being configured to blow protective gas toward the wafer carried by the stage to reduce the temperature of the wafer; A controller communicatively connected to the temperature sensor, the controller being configured to receive the temperature signal to adjust the flow rate and flow velocity of the protective gas output from the protective gas source to the first gas blowing hole.

2. The stage device according to claim 1, wherein There are a plurality of the temperature sensors, and the detection position of the temperature sensor on the wafer is a first position, and the first positions of any two of the temperature sensors are different.

3. The stage device according to claim 2, wherein The first position of one of the temperature sensors is the central position of the wafer, and the first positions of the remaining temperature sensors are arranged at intervals around the central position of the wafer.

4. The stage device according to claim 1, characterized in that The surface of the stage for carrying the wafer is a carrying surface, and the stage is provided with a first mounting hole penetrating through the carrying surface; the temperature sensor is located in the first mounting hole, and the temperature sensor is connected to the stage.

5. The stage device according to claim 1, characterized in that The temperature sensor includes an infrared temperature sensor or a thermal imaging temperature sensor.

6. The stage device according to any one of claims 1 to 5, characterized in that, It further includes an air extraction member provided with an air extraction hole, and the air extraction hole is configured to extract the protective gas passing through the wafer.

7. The stage device according to claim 6, wherein Assuming the position of the wafer carried by the stage is a second position, the air extraction hole and the first gas blowing hole are respectively located on opposite sides of the second position.

8. The stage device according to any one of claims 1 to 5, characterized in that, It further includes a second gas blowing member provided with a second gas blowing hole, the first gas blowing hole is configured to blow the protective gas toward the upper surface of the wafer carried by the stage, and the second gas blowing hole is configured to blow the protective gas toward the lower surface of the wafer carried by the stage.

9. The stage device according to any one of claims 1 to 5, characterized in that, It further includes a lifting module, and the lifting module includes: A suction nozzle for adsorbing or releasing the wafer, assuming the surface of the stage for carrying the wafer is a carrying surface, the stage is provided with a second mounting hole penetrating through the carrying surface, and at least a part of the suction nozzle is located in the second mounting hole; A driving assembly for driving the suction nozzle to move up and down so that the upper end surface of the suction nozzle is higher than or not higher than the carrying surface.

10. Laser annealing equipment, characterized in that, Comprising: The stage device according to any one of claims 1 to 9; A laser device for generating laser to anneal the wafer carried by the stage.

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