Light-emitting substrate

Abstract

The embodiment of the utility model provides a light-emitting substrate, relates to the technical field of display, and is used for increasing the area of a uniform light-emitting region in a sub-pixel region and / or solving the problem of color crosstalk caused by transverse charge transmission in a high-resolution product. The light-emitting substrate comprises a substrate body and a pixel defining layer. The pixel defining layer is located on one side of the substrate along the first direction. The pixel defining layer comprises a plurality of pixel openings; the pixel opening includes a first portion and a second portion arranged along a first direction. Wherein the first part is farther away from the substrate than the second part, and the area of the orthographic projection of the first part on the substrate is smaller than or equal to the area of the orthographic projection of the second part on the substrate. The light-emitting substrate is used for displaying images.

Description

Technical Field

[0001] The present disclosure relates to the field of display technologies, and in particular, to a light-emitting substrate. Background Art

[0002] Organic Light Emitting Diode (OLED) display technology, as a new generation of self-luminous semiconductor display technology, is gradually expanding its market share in the display market. Quantum Dot Light Emitting Diodes (QLED) display technology is considered to be the most promising next-generation self-luminous semiconductor display technology. Both are developing towards higher pixel density or resolution. The pixel definition layer (PDL) is an essential part for pixelization in a QLED light-emitting substrate or an OLED light-emitting substrate. One of its main functions is to block adjacent sub-pixels and prevent optical or electrical crosstalk between sub-pixels.

[0003] However, when an OLED light-emitting substrate or a QLED light-emitting substrate is used in high-resolution products, due to the close distance between sub-pixels, charges may be laterally transmitted on the highly conductive functional layer, causing sub-pixels that are originally in the off state to be lit, resulting in color crosstalk. Summary of the Utility Model

[0004] The purpose of the embodiments of the present disclosure is to provide a light-emitting substrate, which is used to increase the area of the uniform light-emitting region within the sub-pixel region, and / or to solve the color crosstalk problem caused by the lateral transmission of charges in high-resolution products.

[0005] To achieve the above object, the embodiments of the present disclosure provide the following technical solutions:

[0006] On the one hand, a light-emitting substrate is provided. The light-emitting substrate includes a substrate and a pixel definition layer. The pixel definition layer is located on one side of the substrate along a first direction. The pixel definition layer includes a plurality of pixel openings; the pixel openings include a first part and a second part arranged along the first direction. Among them, the first part is farther from the substrate than the second part, and the area of the orthographic projection of the first part on the substrate is less than or equal to the area of the orthographic projection of the second part on the substrate.

[0007] In the above-mentioned light-emitting substrate, the area of the orthographic projection of the first part on the substrate is less than or equal to the area of the orthographic projection of the second part on the substrate. The material of the common film layer entering the pixel opening is difficult to cover the side wall of the pixel opening. In this way, the common film group located on the side of the pixel defining layer away from the substrate cannot be connected to the common film group located within the pixel opening. In other words, the common film group is at least disconnected at the side wall of the pixel opening, preventing the common film group from forming a continuously connected structure throughout the layer. In this way, charge can be prevented from laterally transporting on the common film group, that is, lateral current leakage between sub-pixels can be prevented, and the problem of color crosstalk can be solved.

[0008] In some embodiments, the pixel opening has a first cross-section perpendicular to the substrate, and the first cross-section includes a trapezoidal cross-section. In the trapezoidal cross-section, the dimension of the side relatively far from the substrate is less than or equal to the dimension of the side relatively close to the substrate.

[0009] In some embodiments, the end face of the pixel opening close to the substrate includes a first reference line coplanar with the trapezoidal cross-section. There is a first intersection line between the trapezoidal cross-section and the pixel defining layer. The included angle between the first intersection line and the first reference line is a first angle; the first angle is greater than 0° and less than 90°.

[0010] In some embodiments, the dimension of the pixel defining layer in the first direction is greater than 0 and less than 1000 nm, and the range of the first angle is 20° to 50°; or, the dimension range of the pixel defining layer in the first direction is 1 μm to 3 μm, and the range of the first angle is 30° to 70°; or, the dimension of the pixel defining layer in the first direction is greater than 3 μm, and the range of the first angle is 45° to 80°.

[0011] In some embodiments, the first intersection line includes a first curve, and the included angle between the tangent of the first curve and the first reference line is a third angle. The difference between the maximum value and the minimum value of the third angle is greater than 0 and less than or equal to 6°.

[0012] In some embodiments, the light-emitting substrate further includes a plurality of light-emitting devices disposed in a plurality of pixel openings. The light-emitting device includes a first electrode and a second electrode disposed opposite to each other in the first direction, and the first electrode is closer to the substrate than the second electrode. The surface of the first electrode away from the substrate includes a second reference line coplanar with the trapezoidal cross-section. Among them, there is a first intersection line between the trapezoidal cross-section and the pixel defining layer; the included angle between the first intersection line and the second reference line is greater than 0° and less than 90°.

[0013] In some embodiments, a gap is provided between the first electrode and the pixel defining layer; the dimension range of the gap in the second direction is 1 nm to 200 nm; the second direction is perpendicular to the first direction.

[0014] In some embodiments, the light-emitting device further includes a functional film group located between the first electrode and the second electrode. The edge of the functional film group close to the pixel defining layer bends toward the substrate; or, the edge of the functional film group close to the pixel defining layer bends away from the substrate.

[0015] In some embodiments, the light-emitting device further includes a functional film group located between the first electrode and the second electrode. The surface of the first electrode away from the substrate includes a first line segment coplanar with a trapezoidal cross-section; the surface of the second electrode close to the substrate includes a second line segment coplanar with the trapezoidal cross-section. The two boundaries of the orthographic projection of the first line segment on the substrate correspond to and overlap with the two boundaries of the orthographic projection of the second line segment on the substrate, and overlap with the boundary of the orthographic projection of the end of the pixel opening away from the substrate on the substrate. There is a first spacing between the first line segment and the second line segment. The absolute value of the difference between the first spacing and the first reference spacing, and the ratio of the first reference spacing, is less than or equal to 20%. The first reference spacing is the first spacing corresponding to the center of the first line segment.

[0016] In some embodiments, the edge of the orthographic projection of the functional film group on the substrate overlaps with the edge of the orthographic projection of the pixel defining layer on the substrate.

[0017] In some embodiments, the pixel defining layer includes a first sub-layer and a second sub-layer arranged in a first direction. The first sub-layer is farther from the substrate than the second sub-layer. The first sub-layer includes a plurality of first sub-openings; the second sub-layer includes a plurality of second sub-openings. The plurality of second sub-openings are correspondingly aligned with the plurality of first sub-openings; the edge of the first sub-opening is closer to the center of the pixel opening than the edge of the second sub-opening.

[0018] In some embodiments, the first sub-opening has a first sub-cross-section perpendicular to the substrate, and the first sub-cross-section includes a trapezoidal cross-section, an inverted trapezoidal cross-section, or a rectangular cross-section. The second sub-opening has a second sub-cross-section perpendicular to the substrate, and the second sub-cross-section includes a trapezoidal cross-section, an inverted trapezoidal cross-section, a rectangular cross-section, or a concave cross-section.

[0019] In some embodiments, when the second sub-cross-section includes a concave cross-section, there is a second intersection line between the concave cross-section and the pixel defining layer. The perpendiculars to the tangents at one end of the second intersection line and the perpendiculars to the tangents at the other end have a second angle. The range of the second angle is 20° to 90°.

[0020] In some embodiments, when the second sub-cross-section includes a plurality of concave cross-sections, the second angle corresponding to the concave cross-section relatively farther from the substrate is greater than or equal to the second angle corresponding to the concave cross-section relatively closer to the substrate.

[0021] In some embodiments, the size of the first sub-layer in the first direction is smaller than the size of the second sub-layer in the first direction.

[0022] In some embodiments, the size of the first sub-layer in the first direction is greater than or equal to 10 nm and less than or equal to 200 nm; and / or, the size of the second sub-layer in the first direction is greater than 0.5 μm and less than or equal to 10 μm.

[0023] In some embodiments, the material of the first sub-layer includes an inorganic material; and / or, the material of the second sub-layer includes an organic material.

[0024] In some embodiments, the light-emitting substrate further includes a common film group and a plurality of light-emitting devices. The common film group is located on the surface of the pixel defining layer away from the substrate. The plurality of light-emitting devices are disposed in a plurality of pixel openings. The light-emitting device includes a first electrode, a second electrode, and a functional film group. The first electrode and the second electrode are oppositely disposed along the first direction. The functional film group is located between the first electrode and the second electrode. Among them, at least some of the film layers in the functional film group are of the same layer and the same material as the common film group, and the film group in the functional film group that is of the same layer and the same material as the common film group is in a disconnected state from the common film group. Description of the Drawings

[0025] To more clearly illustrate the technical solutions in the present disclosure, the following will briefly introduce the drawings required for use in some embodiments of the present disclosure. Obviously, the drawings in the following description are only the drawings of some embodiments of the present disclosure, and those of ordinary skill in the art can also obtain other drawings according to these drawings. In addition, the drawings in the following description can be regarded as schematic diagrams, and are not limitations on the actual sizes of the products, the actual processes of the methods, the actual timings of the signals, etc. involved in the embodiments of the present disclosure.

[0026] Figure 1 Structural diagram of a light-emitting substrate according to some embodiments;

[0027] Figure 2 Structural diagram of a light-emitting substrate according to some other embodiments;

[0028] Figure 3 Partial cross-sectional view of a light-emitting substrate according to some embodiments;

[0029] Figure 4 Structural diagram of a light-emitting substrate according to some other embodiments;

[0030] Figure 5A Partial cross-sectional view of the microscopic morphology of a light-emitting substrate according to some embodiments;

[0031] Figure 5B Partial cross-sectional view of the microscopic morphology of a light-emitting substrate according to some other embodiments;

[0032] Figure 5C Top view of a light-emitting substrate according to some embodiments;

[0033] Figure 5D Partial cross-sectional view of a light-emitting substrate according to some other embodiments;

[0034] Figure 5E Partial cross-sectional view of a light-emitting substrate according to some other embodiments;

[0035] Figure 6A Light-emitting image of a light-emitting substrate according to some embodiments;

[0036] Figure 6B Light-emitting image of a light-emitting substrate according to some other embodiments;

[0037] Figure 6C Light-emitting image of a light-emitting substrate according to some other embodiments;

[0038] Figure 6D Light-emitting image of a light-emitting substrate according to some other embodiments;

[0039] Figure 7 Structural diagram of a light-emitting substrate according to some other embodiments;

[0040] Figure 8 Structural diagram of a light-emitting substrate according to some other embodiments;

[0041] Figure 9A Force analysis diagram of ink on a pixel defining layer according to some embodiments;

[0042] Figure 9B Force analysis diagram of ink on a pixel defining layer according to some other embodiments;

[0043] Figure 10A Surface topography diagram after thin film deposition according to some embodiments;

[0044] Figure 10B Surface topography diagram after thin film deposition according to some other embodiments;

[0045] Figure 11 Structural diagram of a light-emitting substrate according to some other embodiments;

[0046] Figure 12A Structural diagram of a light-emitting substrate according to some other embodiments;

[0047] Figure 12B Structural diagram of a light-emitting substrate according to some other embodiments;

[0048] Figure 12C Structural diagram of a light-emitting substrate according to some other embodiments;

[0049] Figure 12D Structural diagram of a light-emitting substrate according to some other embodiments;

[0050] Figure 13 Structural diagram of a light-emitting substrate according to some other embodiments;

[0051] Figure 14 Structural diagram of a light-emitting substrate according to some other embodiments;

[0052] Figure 15 State change diagram during thin film deposition according to some embodiments;

[0053] Figure 16 Structural diagram of a light-emitting substrate according to some other embodiments;

[0054] Figure 17 Structural diagram of a light-emitting substrate according to some other embodiments;

[0055] Figure 18 Structural diagram of a light-emitting substrate according to some other embodiments;

[0056] Figure 19 Structural diagram of a light-emitting substrate according to some other embodiments;

[0057] Figure 20 Structural diagram of a light-emitting substrate according to some other embodiments;

[0058] Figure 21 Partial cross-sectional view of a light-emitting substrate according to some other embodiments;

[0059] Figure 22 Structural diagram of a light-emitting substrate according to some other embodiments;

[0060] Figure 23 Partial cross-sectional view of a light-emitting substrate according to some other embodiments;

[0061] Figure 24 Flowchart of a method for manufacturing a light-emitting substrate according to some embodiments;

[0062] Figure 25 Step diagram in the method for manufacturing a light-emitting substrate according to some embodiments. Detailed implementation manners

[0063] Next, the technical solutions in some embodiments of the present disclosure will be clearly and completely described in conjunction with the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of the present disclosure, rather than all of the embodiments. Based on the embodiments provided by the present disclosure, all other embodiments obtained by those of ordinary skill in the art belong to the scope of protection of the present disclosure.

[0064] Unless the context otherwise requires, throughout the specification and claims, the term "comprising" is to be construed in an open, inclusive sense, i.e., "including, but not limited to". In the description of the specification, the terms "one embodiment", "some embodiments", "exemplary embodiments", "examples", or "some examples", etc. are intended to indicate that a particular feature, structure, material, or characteristic related to the embodiment or example is included in at least one embodiment or example of the present disclosure. The schematic representations of the above terms do not necessarily refer to the same embodiment or example. In addition, the specific features, structures, materials, or characteristics may be included in any one or more embodiments or examples in any appropriate manner.

[0065] Hereinafter, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of the indicated technical features. Thus, features defined with "first" and "second" may explicitly or implicitly include one or more of such features. In the description of the embodiments of the present disclosure, unless otherwise specified, the meaning of "a plurality" is two or more.

[0066] "At least one of A, B, and C" has the same meaning as "at least one of A, B, or C", and both include the following combinations of A, B, and C: only A, only B, only C, the combination of A and B, the combination of A and C, the combination of B and C, and the combination of A, B, and C.

[0067] "A and / or B" includes the following three combinations: only A, only B, and the combination of A and B.

[0068] The use of "suitable for" or "configured to" herein means open and inclusive language, which does not exclude a device that is suitable for or configured to perform additional tasks or steps.

[0069] In addition, the use of "based on" means open and inclusive, because a process, step, calculation, or other action "based on" one or more of the stated conditions or values may, in practice, be based on additional conditions or values beyond the stated ones.

[0070] As used herein, "about", "substantially", or "approximately" includes the stated value and the average value within an acceptable deviation range of the specific value, where the acceptable deviation range is determined by those of ordinary skill in the art considering the measurement being discussed and the errors associated with the measurement of a particular quantity (i.e., the limitations of the measurement system).

[0071] As used herein, "parallel", "perpendicular", and "equal" include the stated cases as well as cases similar to the stated cases, where the range of such similar cases is within an acceptable deviation range, and the acceptable deviation range is determined by one of ordinary skill in the art considering the measurements being discussed and the errors associated with the measurement of a particular quantity (i.e., the limitations of the measurement system). For example, "parallel" includes absolute parallelism and approximate parallelism, where the acceptable deviation range for approximate parallelism can be, for example, within 5° deviation; "perpendicular" includes absolute perpendicularity and approximate perpendicularity, where the acceptable deviation range for approximate perpendicularity can also be, for example, within 5° deviation. "Equal" includes absolute equality and approximate equality, where the acceptable deviation range for approximate equality can be, for example, that the difference between the two equal ones is less than or equal to 5% of either one of them.

[0072] It should be understood that when a layer or element is referred to as being on another layer or substrate, it can be that the layer or element is directly on the other layer or substrate, or there can be an intermediate layer between the layer or element and the other layer or substrate.

[0073] Exemplary embodiments are described herein with reference to cross-sectional views and / or plan views that are idealized exemplary drawings. In the drawings, the thickness of the layers and the area of the regions are exaggerated for clarity. Thus, variations in the shape relative to the drawings due to, for example, manufacturing techniques and / or tolerances are contemplated. Accordingly, the exemplary embodiments should not be construed as being limited to the shape of the regions shown herein, but include shape deviations caused, for example, by manufacturing. For example, an etched region shown as rectangular will generally have curved features. Thus, the regions shown in the drawings are schematic in nature, and their shapes are not intended to show the actual shape of the regions of the device and are not intended to limit the scope of the exemplary embodiments.

[0074] It should be noted that in the drawings of the present disclosure, for example, 11~1 indicates that component 11 belongs to component 1, for example, K1~K indicates that side K1 belongs to trapezoidal cross-section K, and other similar reference numerals appearing in the drawings of the present disclosure also follow the above description. For example, 1 / 2 appearing in the drawings of the present disclosure indicates that both component 1 and component 2 can refer to this component. For example, W2 / W3 in the drawings indicates that both the junction line W2 and the second junction line W3 can be represented by this component. Other similar reference numerals appearing in the drawings also follow the above description.

[0075] As Figure 1 As shown, some embodiments of the present disclosure provide a light-emitting substrate 200. The light-emitting substrate 200 includes a substrate 210 and a pixel defining layer 220. The pixel defining layer 220 is located on one side of the substrate 210 along the first direction X. The pixel defining layer 220 includes a plurality of pixel openings Q.

[0076] The above-mentioned light-emitting substrate 200 can be, for example, a QLED light-emitting substrate. Quantum dots have become strong competitors in new display technologies due to their advantages such as narrow emission spectra, adjustable emission wavelengths through size control, and high luminous efficiency. In a QLED light-emitting substrate, the light-emitting devices can be fabricated using a photolithography process, enabling a relatively high pixel density and high brightness, and can be used for near-eye displays.

[0077] The above-mentioned light-emitting substrate 200 can be applied to a display device. The display device can be any display device that displays whether it is moving (e.g., video) or stationary (e.g., a still image), and whether it is text or an image. More specifically, it is expected that the light-emitting substrate 200 of the embodiments can be implemented and applied in or associated with a variety of electronic devices, such as (but not limited to) mobile phones, wireless devices, personal data assistants (PDAs), handheld or portable computers, GPS receivers / navigators, cameras, MP4 video players, video cameras, game consoles, watches, clocks, calculators, television monitors, flat panel displays, computer monitors, automotive displays (e.g., odometer displays, etc.), navigators, cockpit controllers and / or displays, displays of camera views (e.g., displays of rear-view cameras in vehicles), electronic photos, electronic billboards or signs, projectors, architectural structures, packaging, and aesthetic structures (e.g., displays of images of a piece of jewelry), etc.

[0078] It should be noted that, in some examples, the surface of the substrate 210 has various microstructures such as channels, openings, circuits (e.g., the pixel driving circuit 2121 described below), etc. The part of the pixel definition layer 220 close to the substrate 210 may come into contact with these microstructures on the surface of the substrate 210. However, for the sake of convenience of expression, in the drawings of the present disclosure, these microstructures on the substrate 210 are omitted, and the surface of the substrate 210 close to the pixel definition layer 220 is represented as an approximately flat surface. However, the slight deviations in the profile of the pixel definition layer 220 caused by these microstructures, as well as parameters such as the first angle α described in detail below, should all be covered within the protection scope of the present disclosure.

[0079] Exemplarily, the dimension of the pixel definition layer 220 along the first direction X can be 0.2 μm to 3 μm, such as 0.2 μm, 0.5 μm, 0.8 μm, 1.0 μm, 1.5 μm, 2.0 μm, 2.4 μm, or 3 μm, etc.

[0080] Exemplarily, the dimension of the pixel definition layer 220 along the first direction X can be 0.5 μm to 1.5 μm.

[0081] In some embodiments, as Figure 1As shown, the light-emitting substrate 200 further includes a plurality of light-emitting devices 100 disposed within a plurality of pixel openings Q. For example, the plurality of light-emitting devices 100 may be disposed in one-to-one correspondence with the plurality of openings Q.

[0082] In some embodiments, as Figure 1 shown, the substrate substrate 210 includes a substrate 211 and a driving circuit layer 212 disposed on one side of the substrate 211 along the first direction X. In this case, the pixel defining layer 220 may be located on the side of the driving circuit layer 212 away from the substrate 211.

[0083] When the substrate substrate 210 includes the substrate 211, the first direction X is, for example, a direction perpendicular to the plane where the substrate 211 is located. The plurality of pixel openings Q may be arranged along the second direction Y, and the second direction Y is, for example, a direction parallel to the plane where the substrate 211 is located.

[0084] Exemplarily, the material of the substrate 211 may be a rigid material, such as glass, to achieve a rigid substrate display; or, the material of the substrate 211 may also be a flexible material, such as polyimide (PI) or polyethylene glycol terephthalate (PET), to achieve a flexible substrate display.

[0085] In some examples, the driving circuit layer 212 includes a plurality of pixel driving circuits 2121 arranged in an array, and the pixel driving circuit 2121 includes a plurality of transistors TFT. The pixel driving circuit 2121 is electrically connected to the light-emitting device 100 and is used to drive the light-emitting device 100 to emit light. For example, the pixel driving circuit 2121 may generate a driving current. Each light-emitting device 100 may emit light under the driving action of the driving current generated by the corresponding pixel driving circuit 2121. At this time, the pixel driving circuit 2121 adopts TFT technology, and the light-emitting substrate 200 may be referred to as an active driving light-emitting substrate (such as an active driving QLED light-emitting substrate, an AMQLED light-emitting substrate). Among them, the AMQLED light-emitting substrate has received increasing attention due to its potential advantages in wide color gamut, high lifespan, etc., and its quantum efficiency is continuously improving, basically reaching the industrialization level.

[0086] In some examples, as Figure 1 shown, the light-emitting substrate 200 further includes a packaging layer 230, and the packaging layer 230 may be disposed on the side of the plurality of light-emitting devices 100 away from the substrate substrate 210, that is to say, the packaging layer 230 may be disposed on the side of the pixel defining layer 220 away from the substrate substrate 210.

[0087] Exemplarily, the light-emitting substrate 200 may be a QLED light-emitting substrate or an OLED light-emitting substrate. At this time, the encapsulation layer 230 covers the light-emitting device 100 to wrap the light-emitting device 100, so as to prevent water vapor and oxygen in the external environment from entering the light-emitting substrate 200 and damaging the materials in the light-emitting device 100, resulting in a shortened lifespan of the QLED light-emitting substrate or the OLED light-emitting substrate.

[0088] In some embodiments, the plurality of light-emitting devices 100 include a blue light-emitting device, a red light-emitting device, and a green light-emitting device. At this time, the light-emitting substrate 200 can be used for full-color display. By respectively adjusting the brightness (gray scale) of the blue light-emitting device, the red light-emitting device, and the green light-emitting device, various colors can be displayed through color combination and superposition.

[0089] In some embodiments, as Figure 1 and Figure 2 shown, the light-emitting device 100 includes a first electrode 110 and a second electrode 120 that are oppositely arranged along the first direction X. The first electrode 110 is closer to the substrate 210 than the second electrode 120.

[0090] In some examples, the first electrode 110 is an anode and the second electrode 120 is a cathode. At this time, the light-emitting device 100 can be called a normal light-emitting device. In some other examples, the first electrode 110 is a cathode and the second electrode 120 is an anode. At this time, the light-emitting device 100 can be called an inverted light-emitting device.

[0091] Exemplarily, the size of the first electrode 110 along the first direction X can be 50 nm to 300 nm, such as 50 nm, 80 nm, 100 nm, 130 nm, 200 nm, 255 nm, or 300 nm, etc.

[0092] In some examples, the first electrode 110 is a transparent electrode. At this time, the size of the first electrode 110 along the first direction X can be 60 nm to 110 nm, such as 60 nm, 70 nm, 80 nm, 95 nm, 100 nm, or 110 nm, etc.

[0093] In some other examples, the first electrode 110 is a non-transparent electrode. At this time, the size of the first electrode 110 along the first direction X can be 100 nm to 160 nm, such as 100 nm, 110 nm, 120 nm, 130 nm, 145 nm, or 160 nm, etc.

[0094] In some embodiments, as Figure 1 and Figure 2 shown, the light-emitting device 100 further includes a functional film group 130 located between the first electrode 110 and the second electrode 120. The functional film group 130 includes, for example, a plurality of functional film layers.

[0095] Exemplarily, the size of the functional film group 130 along the first direction X may be 50 nm to 300 nm, such as 50 nm, 70 nm, 90 nm, 100 nm, 120 nm, 130 nm, 150 nm, 160 nm, 200 nm, 240 nm, 265 nm or 300 nm, etc.

[0096] Exemplarily, the size of the functional film group 130 along the first direction X may be 120 nm to 200 nm.

[0097] In some examples, the functional film group 130 includes a light-emitting layer. During operation, a voltage is applied to the first electrode 110 and the second electrode 120 respectively to generate an electric field therebetween, which can drive the holes of the anode and the electrons of the cathode to recombine in the light-emitting layer, thereby emitting light.

[0098] Exemplarily, the light-emitting layer is a quantum dot light-emitting layer. In this case, the material of the light-emitting layer may include quantum dots, and the quantum dots may be one or more of CdS, CdSe, ZnSe, ZnTeSe, InP, PbS, CsPbCl3, CsPbBr3, CsPhI3, CdS / ZnS, CdSe / ZnS, ZnSe, ZnSeTe, InP / ZnS, PbS / ZnS, CsPbCl3 / ZnS, CsPbBr3 / ZnS, CsPbI3 / ZnS, CdS / ZnSeS / ZnS, CdSe / ZnSeS / ZnS, ZnSe / ZnSeS / ZnS, ZnSeTe / ZnSeS / ZnS, InP / ZnS, PbS / ZnS, CsPbCl3 / ZnS, CsPbBr3 / ZnS and CsPhI3 / ZnS in any combination. Moreover, the shape of the quantum dots includes but is not limited to geometric shapes such as spherical, ellipsoidal, polyhedral, rod-shaped, cross-shaped or annular.

[0099] In some embodiments, to improve the light-emitting efficiency of the light-emitting device 100, the functional film group 130 further includes a hole transport functional layer, which is located between the light-emitting layer and the anode. The hole transport functional layer includes, for example, at least one of a hole injection layer (Hole Inject Layer, HIL), a hole transport layer (Hole Transport Layer, HTL) and an electron blocking layer (Electron Blocking Layer, EBL).

[0100] In some embodiments, to improve the luminous efficiency of the light-emitting device 100, the functional film stack 130 further includes an electron transport functional layer, which is located between the light-emitting layer and the cathode. The electron transport functional layer includes, for example, at least one of a stacked electron injection layer (EIL), an electron transport layer (ETL), and a hole blocking layer (HBL).

[0101] In some embodiments, the pixel defining layer 220 may form a micro-nano structure on the surface of the substrate 210, such as a pixelated micro-nano structure. Here, the pixelated micro-nano structure is, for example, an array of sub-pixel regions formed by the pixel defining layer 220. Among them, the sub-pixel region is the region surrounded by the material of the pixel defining layer 220, and can also be called an opening region.

[0102] In some implementation manners, the light-emitting substrate is a QLED light-emitting substrate. The functional film stack is prepared by a solution process, for example, by processes such as spin coating, inkjet printing, slit coating, blade coating, and air knife coating to form a film. When coating a film-forming material on the micro-nano structure formed by the pixel defining layer, the film will be affected by various factors such as the climbing effect, the coffee ring effect, the dam effect, and the difference in wettability between the ink and the surface of the substrate, resulting in the film-forming uniformity in the sub-pixel region being affected.

[0103] In still other implementation manners, as Figure 4 shown, the pixel opening D-Q in the pixel defining layer D-PDL is larger at the top and smaller at the bottom (the end far from the substrate BP is the top). In other words, the included angle β between the contour line of the pixel defining layer D-PDL and the surface of the substrate BP on one side thereof is an acute angle (for example, an acute angle greater than or equal to 30°). In this case, after the functional film stack prepared by the solution process is formed in the sub-pixel region, the contour G1 of the surface of the film M1 far from the substrate BP has a shape similar to a "U", the film-forming uniformity of the film M1 in the sub-pixel region is poor, and the luminous proportion of the flat region is not high, and the luminous uniformity is poor.

[0104] Moreover, after the multi-layer functional film layers are stacked layer by layer, the non-uniformity of the film M1 may increase layer by layer, resulting in a greater film thickness deviation in the overall fabricated light-emitting device. This trend of increasing deviation is particularly prominent on light-emitting substrates with a high pixel density. The non-uniformity of the film thickness may cause two direct light-emitting defects: uneven light emission in a single sub-pixel region and uneven light emission between different sub-pixels.

[0105] For example, Figure 5A and Figure 5B are partial views of the microscopic morphology of the light-emitting substrate obtained by a Scanning Electron Microscope (SEM). Figures 5C to 5E is a partial view of the light-emitting substrate obtained by a Focused Ion Beam (FIB)-Transmission Electron Microscope (TEM). Among them, Figure 5A in, two dashed boxes indicate the phenomenon of the film thickness increase of the film M1 in the region close to the pixel definition layer D-PDL. Figure 5B in, the film thickness of the film M1 in the region close to the pixel definition layer D-PDL was measured, and the film thicknesses at three measured positions were d1, d2, and d3 respectively. The results show that the film thickness difference is relatively large. Figure 5B in, d1 is, for example, 155 nm, d2 is, for example, 132 nm, and d3 is, for example, 110 nm. Figure 5C is a partial view of the top view of the light-emitting substrate when viewed from above in the first direction X. For Figure 5C at A in, sub-ion bombardment was performed, and the obtained cross-sectional view is as Figure 5D shown, and the film thickness of the film M1 in this cross-sectional layer was measured. The results show that the film thickness range of the part of the film M1 close to the pixel definition layer D-PDL is 89 nm to 100 nm. For Figure 5C at B in, sub-ion bombardment was performed, and the obtained cross-sectional view is as Figure 5E shown, and the film thickness of the film M1 in this cross-sectional layer was measured. The results show that the film thickness range of the part of the film M1 located in the pixel center region is 52 nm to 58 nm. From Figure 5D and Figure 5E it can be seen that within the same field of view, the film thickness values measured at different positions are not the same. Therefore, from Figures 5A to 5E it can be seen that in the sub-pixel region, the film M1 often shows a morphology where the pixel center region is relatively flat and the film thickness uniformity is good, while the film thickness increases and the film thickness non-uniformity increases in the region close to the pixel definition layer D-PDL, resulting in an increase in the film formation non-uniformity of the entire sub-pixel region. In this case, it will cause the proportion of the effective light-emitting region AA1 (which can be understood as a uniform light-emitting region) in the light-emitting region BB1 (see Figure 4 ) in the sub-pixel region of the light-emitting substrate to decrease.

[0106] For another example, Figures 6A to 6D is an image of the sub-pixel region emitting light at different voltages when the film thickness uniformity is poor. Among them, Figure 6A is an image of the red sub-pixel region emitting light at a low voltage, Figure 6BIt is an image when the red sub-pixel region emits light under high voltage. Figure 6C It is an image when the green sub-pixel region emits light under low voltage. Figure 6D It is an image when the green sub-pixel region emits light under high voltage. As can be seen from Figures 6A to 6D When the film thickness uniformity is poor, there is a phenomenon of uneven light emission in a single sub-pixel region, and there is also uneven light emission between different sub-pixels. This will cause non-uniformity in the performance such as efficiency and lifespan of different sub-pixels, and further affect the use performance of the entire light-emitting substrate.

[0107] Moreover, as can be seen from Figures 6A to 6D In the sub-pixel region, the effective light-emitting region is only a partial region near the pixel center. It should be noted that Figures 6A to 6D also shows the edge light-emitting region in the sub-pixel region (i.e., the annular light-emitting region located at the edge of the sub-pixel region shown in the figure). This may be because a lateral current is generated in some functional film layers in the functional film group, transporting a certain amount of carriers to the position of the thinner film layer at the top edge of the pixel opening, resulting in the thinner film layer at the top edge of the pixel opening emitting light. Here, the top refers to the end far from the substrate.

[0108] It can be seen that when the pixel defining layer forms a micro-nano structure on the surface of the substrate, and the pixel opening in the pixel defining layer is larger at the top and smaller at the bottom, the film formation uniformity of the functional film group prepared by the solution process will be affected, resulting in an increase in the film formation non-uniformity of the functional film group. Moreover, the non-uniformity of film formation will cause uneven light emission within the sub-pixel region and / or uneven light emission between different sub-pixels, thus affecting the performance of the light-emitting substrate.

[0109] In some embodiments, as shown in Figure 1 and Figure 2 The second electrodes 120 of multiple light-emitting devices 100 are of the same layer and the same material and are formed through one process. At this time, the film layer where the second electrode 210 is located is a common film layer shared by multiple light-emitting devices 100. In some cases, the second electrode 120 will be formed on the side of the pixel defining layer 220 far from the substrate 210 at the same time. At this time, the second electrode 120 located on the side of the pixel defining layer 220 far from the substrate 210 may be integrally connected with the second electrode 210 located within the pixel opening Q.

[0110] Similarly, as shown in Figure 2As shown, a certain functional film layer in the functional film group 130 of multiple light-emitting devices 100 can be of the same layer and the same material, and formed through a single process. For example, the hole injection layers of multiple light-emitting devices 100 can be of the same layer and the same material, and formed through a single process. At this time, the hole injection layer is a common film layer shared by multiple light-emitting devices 100. In some cases, the common film layer will be formed on the side of the pixel definition layer 220 away from the substrate 211 at the same time. At this time, the common film layer located on the side of the pixel definition layer 220 away from the substrate 210 may be integrally connected with the common film layer located within the pixel opening Q.

[0111] For example, in some implementations, as Figure 3 shown, the slope angle of the side wall of the pixel definition layer D-PDL is small. In other words, the angle between the contour line of the pixel definition layer D-PDL and the bottom surface of the pixel opening D-Q is relatively large (greater than 90°). In this case, the common film layer prepared by processes such as evaporation coating, spin coating, or slit coating is continuous between sub-pixels.

[0112] It should be understood that in the case where the functional film group 130 includes multiple film layers, the number of common film layers in the functional film group 130 may be one or multiple. Hereinafter, one or more common film layers in the functional film group 130 are collectively referred to as the common film group 130X.

[0113] As described in the background, when QLED light-emitting devices or OLED light-emitting devices are used in high-resolution products, charges may be laterally transmitted on the highly conductive common film layer. For example, in the scenario where near-eye displays require more than 1000 PPI (Pixels Per Inch), due to the close distance between sub-pixels, charges can be laterally transmitted on the highly conductive common film layer (such as: hole injection layer and / or electron transport layer), resulting in lateral current leakage between sub-pixels, causing sub-pixels that were originally in the off state to light up, leading to color crosstalk. Here, the material of the hole injection layer is, for example, polyethylenedioxythiophene (PEDOT), and the material of the electron transport layer is, for example, zinc oxide (ZnO).

[0114] Based on this, some embodiments of the present disclosure provide a light-emitting substrate 200 to solve at least one of the above technical problems. As Figure 2 shown, the pixel opening Q includes a first part QA and a second part QB arranged along the first direction X. Among them, the first part QA is farther from the substrate 210 than the second part QB, and the area S1 of the positive projection of the first part QA on the substrate 210 is less than or equal to the area S2 of the positive projection of the second part QB on the substrate 210.

[0115] It should be noted that the shape of the positive projection of the first part QA on the substrate 210 may or may not be similar to the shape of the second part QB on the substrate 210, and there is no limitation here. Moreover, the shapes and areas of the positive projections of the first parts QA of multiple pixel openings Q on the substrate 210 may or may not be the same; the shapes and areas of the positive projections of the second parts QB of multiple pixel openings Q on the substrate 210 may or may not be the same, and there is no limitation here.

[0116] In some examples, the first part QA and / or the second part QB may be the end portions of the pixel opening Q; for example, as Figure 2 shown, the first part QA is the end portion of the pixel opening Q away from the substrate 210; the second part QB is the end portion of the pixel opening Q close to the substrate 210.

[0117] In still other examples, the first part QA and / or the second part QB may be other portions of the pixel opening Q other than the end portions; for example, as Figure 19 shown, the second part QB is other portions of the pixel opening Q other than the end portions.

[0118] It can be understood that, on the one hand, when the area S1 of the positive projection of the first part QA on the substrate 210 is less than or equal to the area S2 of the positive projection of the second part QB on the substrate 210, the material entering the common film layer of the pixel opening Q is difficult to cover the side wall of the pixel opening Q. In this way, the common film group 130X on the side of the pixel defining layer 220 away from the substrate 210 cannot be connected to the common film group 130X within the pixel opening Q. In other words, the common film group 130X is at least disconnected at the side wall of the pixel opening Q, so that the common film group 130X cannot form a whole-layer connected structure. In this way, it is possible to prevent charges from being laterally transmitted on the common film group 130X, that is, it is possible to prevent the leakage of lateral current between sub-pixels, and the problem of color crosstalk can be solved.

[0119] On the other hand, when the area S1 of the positive projection of the first part QA on the substrate 210 is less than or equal to the area S2 of the positive projection of the second part QB on the substrate 210, when the material of the common film group 130X climbs onto the pixel defining layer 220, the second part QB has a relatively large accommodation space, which can provide a certain buffer space for the material of the common film group 130X, so that the film thickness change of the common film group 130X is small. In this way

[0120] In some embodiments, such as Figure 2 、 Figure 7 and Figure 8As shown, the pixel aperture Q has a first cross-section perpendicular to the substrate 210. The first cross-section includes a trapezoidal cross-section K. In the trapezoidal cross-section K, the dimension L1 of the side K1 relatively far from the substrate 210 is less than or equal to the dimension L2 of the side K2 relatively close to the substrate 210.

[0121] Exemplarily, an image of the first cross-section can be obtained by the FIB-TEM method, and then the dimension L1 of the side K1 relatively far from the substrate 210 in the trapezoidal cross-section K, which is less than or equal to the dimension L2 of the side K2 relatively close to the substrate 210, can be measured.

[0122] Exemplarily, when the first cross-section includes the trapezoidal cross-section K, the process of forming the pixel aperture Q can be etching using a negative photoresist.

[0123] It should be noted that the shape of the trapezoidal cross-section K can include cases that are approximately trapezoidal or nearly trapezoidal. In other words, as long as the trapezoidal cross-section K satisfies the requirement that the two sides along the first direction X are approximately parallel and the two waistlines are approximately straight lines. Here, the acceptable deviation range for the two sides along the first direction X being approximately parallel and / or the two waistlines being approximately straight lines is not limited here. For example, the acceptable deviation range can be within 5°.

[0124] It should be understood that when the first cross-section includes the trapezoidal cross-section K and the dimension L1 of the side K1 in the trapezoidal cross-section K is less than or equal to the dimension L2 of the side K2, the material (such as ink) for forming the common film group 130X and / or the functional film group 130 can be disposed on the reverse slope surface. Under the combined action of the gravity G and the slope reaction force N4 of the reverse slope surface (see Figure 9B ), it is difficult for the material of the common film group 130X and / or the functional film group 130 to climb on the sidewall of the pixel aperture Q, and it is difficult for the material of the common film group 130X and / or the functional film group 130 located in the pixel aperture Q to climb to the top of the pixel defining layer 220 far from the substrate 210.

[0125] Understandably, with the above settings, on the one hand, the material forming the common film group 130X is difficult to climb onto the top of the pixel defining layer 220 away from the substrate 210, which can effectively block the common film group 130X. In this way, the lateral transmission of charges on the common film group 130X can be prevented. First, the problem of color crosstalk can be solved; second, the problem of light emission in the edge light-emitting region mentioned above can be suppressed. On the other hand, the material forming the functional film group 130 is difficult to climb on the sidewalls of the pixel opening Q, and the problem of uneven edge film thickness caused by the climbing effect is improved or suppressed, which can improve the uniformity of the formed functional film group 130. First, the uniformity of the performance such as efficiency and lifespan of different sub-pixels can be improved, and the service performance of the entire light-emitting substrate 200 can be improved; second, the light emission uniformity of a single sub-pixel can be enhanced. In this way, when performing circuit compensation on the substrate 210 or adjusting the image quality uniformity of the light-emitting substrate 200, the operation is more convenient and simple; third, the uniformity of the current within the sub-pixel can be enhanced, which is beneficial to the efficiency stability and lifespan maintenance of the light-emitting substrate 200.

[0126] In some examples, when the first cross-section includes a trapezoidal cross-section K, and the dimension L1 of side K1 in the trapezoidal cross-section K is less than or equal to the dimension L2 of side K2, the structure of the light-emitting substrate 200 is as Figure 8 shown, and it can be seen from Figure 8 that, compared with the situation in some implementations where the pixel opening is larger at the top and smaller at the bottom (for example, the situation shown in Figure 4 ), the contour G2 of the surface of the thin film M2 away from the substrate 210 is relatively flatter. In other words, the flat area of the thin film M2 is larger; moreover, although there may still be a situation of uneven film thickness at the edge part of the thin film M2 close to the pixel defining layer 220, compared with the situation shown in Figure 4 , the uneven film thickness at the edge part can be improved to a large extent. And, in the situation shown in Figure 8 , the area of the effective light-emitting region AA2 (which can be understood as a uniform light-emitting region) is approximately equal to the area of the light-emitting region BB2 (see Figure 8 ).

[0127] To more clearly illustrate the influence of the morphology of the pixel defining layer 220 on the morphology of the formed functional film group 130 when the first cross-section includes a trapezoidal cross-section K (see Figure 7 ), the dimension L1 of side K1 in the trapezoidal cross-section K is less than or equal to the dimension L2 of side K2, and the functional film group 130 is prepared by a solution process, the influence of the pixel defining layer D-PDL on the ink U1 located thereon (see Figure 4 ) and the influence of the pixel defining layer 220 on the ink U2 located thereon (see Figure 9A ) are respectively shown in Figure 8 shown, and (seeFigure 9B ) An analysis and comparison were carried out. It should be noted that Figure 9A and Figure 9B , where G is gravity, N1 is frictional force (which can also be understood as the adhesion force between solid and liquid), N2 is the supporting force, N3 is the adhesion force between liquid and liquid, and N4 is the slope reaction force.

[0128] As Figure 9A shown, the dam effect of the pixel definition layer D-PDL on the ink U1 actually only serves as a blocking function. However, the ink U1 will climb up to the pixel definition layer D-PDL and form a certain degree of enrichment after drying and film formation, resulting in a relatively thick film thickness at the edge of the film. Moreover, the thickness of this part of the film thickness is also related to factors such as the force on the ink U1, the wettability between the ink U1 and the pixel definition layer, and the topography of the surface in contact with the ink U1, rather than being solely affected by the above-mentioned blocking function.

[0129] As described above, the topography of the film formed by the ink is related to factors such as the force on the ink on the slope of the pixel definition layer, the wettability between the ink and the pixel definition layer, and the topography of the surface in contact with the ink. Here, it is assumed that Figure 9A the material of the pixel definition layer D-PDL shown in Figure 9B is the same as the material of the pixel definition layer 220 shown in

[0130] That is to say, it is assumed that the wettability between the ink U1 and the pixel definition layer D-PDL is the same as the wettability between the ink U2 and the pixel definition layer 220. Then, the topography of the film formed by the ink is related to factors such as the force on the ink on the slope of the pixel definition layer and the topography of the surface in contact with the ink. The following will analyze from the perspective of the force on the ink on the slope of the pixel definition layer. For the analysis and description from the perspective of the topography of the surface in contact with the ink, reference can be made to the following content and will not be elaborated here. Figure 9B shown, the dam effect of the pixel definition layer 220 on the ink U2 actually only forms a blocking function and will not cause climbing and a worse film surface. Moreover, the force on the ink U2 on the slope of the pixel definition layer 220 is inclined downward, so it is not easy to remain on this slope, which can effectively suppress the climbing caused by the dam and make the film surface more flat. Generally speaking, for an object to stay on the reverse side of a "slope", the following conditions need to be met: either the reverse side of the slope has sufficient upward pulling force on the object, or there is sufficient supporting force under the object, otherwise it cannot stay on the reverse side of the "slope". And Figure 9B in the situation shown, the above conditions are not met, so that the ink U2 cannot stay on the reverse slope of the pixel definition layer 220, thus making the film surface more flat.

[0131] In some embodiments, a white light interferometer is used toFigure 4 The image of the sub-pixel region after depositing the thin film in the shown case was tested, and the result is as Figure 10A shown, and the image of the sub-pixel region after depositing the thin film in the Figure 8 case was also tested, and the result is as Figure 10B shown. From Figure 10A and Figure 10B , it can be seen that by setting the first cross-section to include a trapezoidal cross-section K, where the dimension L1 of side K1 in the trapezoidal cross-section K is less than or equal to the dimension L2 of side K2 (see Figure 7 ), the film formation uniformity of the deposited thin film can be effectively improved.

[0132] In some embodiments, as shown in Figure 11 and Figure 12A , the edge of the orthographic projection of the functional film group 130 on the substrate 210 overlaps with the edge of the orthographic projection of the pixel defining layer 220 on the substrate 210.

[0133] It should be understood that through the above settings, although there may still be a situation of non-uniform film thickness in the edge portion of the functional film group 130 close to the pixel defining layer 220, this region with non-uniform film thickness can be covered by the pixel defining layer 220. In this way, the electrode (such as the second electrode 120) on the side of the functional film group 130 away from the substrate 210 cannot cover this region with non-uniform film thickness, so that the portion of the functional film group 130 located in the region with non-uniform film thickness cannot be applied with voltage and / or current. Thus, the light emission of this region with non-uniform film thickness can be avoided. Therefore, without changing the size of the electrode (such as the first electrode 110) on the side of the functional film group 130 close to the substrate 210, the proportion of the effective light-emitting region AA2 (which can be understood as a uniform light-emitting region) in the light-emitting region BB2 (see Figure 8 ) can be increased, and to a certain extent, the effective light-emitting area can be increased.

[0134] It should be noted that in some examples, although the projection of the pixel defining layer 220 will block the functional film group 130 at the edge portion of the sub-pixel region, making this part of the functional film group 130 unable to emit light, seemingly reducing a certain light-emitting area, in fact, the light-emitting area is not lost because the proportion of the effective light-emitting area in the total area of the sub-pixel region is effectively increased. Of course, the light-emitting area can also be further increased by increasing the area or size of the electrode (such as the first electrode 110) on the side of the functional film group 130 close to the substrate 210 to reduce the weak influence caused by the projection block of the pixel defining layer 220.

[0135] The above is an exemplary description of the principle of action of the pixel defining layer 220 on the ink used to form the functional film group 130, the relative positional relationship between the pixel defining layer 220 and the functional film group 130, etc. Hereinafter, the morphological characteristics of the pixel defining layer 220 will be described exemplarily.

[0136] In some embodiments, as Figure 11 shown, the end face of the pixel opening Q close to the substrate 210 includes a first reference line C1 coplanar with the trapezoidal cross-section K. There is a first boundary line between the trapezoidal cross-section K and the pixel defining layer 220, and the included angle between the first boundary line and the first reference line C1 is a first angle α; the first angle α is greater than 0° and less than 90°.

[0137] It should be understood that a third reference line C3 coplanar with the trapezoidal cross-section K may be included between the pixel defining layer 220 and the substrate 210. When the included angle between the first boundary line and the first reference line C1 is the first angle α, and the first angle α is greater than 0° and less than 90°, the angle between the first boundary line and the third reference line C3 is 180° - α, and the angle between the first boundary line and the third reference line C3 is greater than 90° and less than 180°.

[0138] Exemplarily, considering factors such as the practicability of the pixel and the aperture ratio, etc., the range of the first angle α is 20° to 80°. It should be understood that when the first angle α is relatively small, the proportion of the light-emitting region in the sub-pixel region is relatively low, making the light-emitting region relatively small; therefore, by setting the range of the first angle α to be 20° to 80°, the light-emitting region in the sub-pixel region can be made relatively large, and the efficiency of the light-emitting substrate 200 can be improved.

[0139] Exemplarily, the first angle α can be 5°, 20°, 30°, 40°, 50°, 63°, 70°, 80° or 90°, etc.

[0140] It can be understood that through the above settings, in the trapezoidal cross-section K, the size of the side K1 relatively far from the substrate 210 (see Figure 7 ) can be made smaller than the size of the side K2 relatively close to the substrate 210; in this way, firstly, it can prevent charges from laterally transporting on the common film group 130X; secondly, it can improve the uniformity of the formed functional film group 130.

[0141] In some examples, as Figure 11 shown, the first boundary line includes a first straight line Z1. At this time, the first angle α is the included angle between the first straight line Z1 and the first reference line C1.

[0142] In still other examples, as Figures 12A to 12DAs shown, the geometric outline of the pixel defining layer 220 is irregular, making the first junction line not a straight line. In this case, the first angle α can be obtained in different ways. The following describes an exemplary way to obtain the first angle α in this case.

[0143] As a possible implementation, as Figure 12A shown, the first junction line includes a first curve W1. In this case, the angle between the tangent H1 of the first curve W1 and the first reference line C1 is the third angle φ, and the third angle φ can be used as the first angle α.

[0144] It should be noted that, as Figure 12A shown, the above first angle α can be obtained by intersecting the tangent H1 of the first curve W1 and the extension line of the first reference line C1.

[0145] It should be noted that there is no limitation on the bending direction of the first curve W1 here. For example, as Figure 12A and Figure 12B shown, the first curve W1 can bend away from the pixel defining layer 220. At this time, the third angle φ gradually decreases in the direction away from the substrate 210; for another example, the first curve W1 can bend towards the pixel defining layer 220. At this time, the third angle φ gradually increases in the direction away from the substrate 210. Moreover, when the third angle φ gradually decreases or gradually increases in the direction away from the substrate 210, the third angle φ has a maximum value and a minimum value.

[0146] In some embodiments, as Figure 12A shown, the difference between the maximum value φ max of the third angle φ and the minimum value φ min of the third angle φ is greater than 0 and less than or equal to 6°.

[0147] Exemplarily, the difference between the maximum value φ max of the third angle φ and the minimum value φ min of the third angle φ can be 1°, 2°, 3°, 4.2°, 5° or 6°.

[0148] It can be understood that when the maximum value φ max of the third angle φ is a fixed value, when the difference between the maximum value φ max of the third angle φ and the minimum value φ min of the third angle φ is relatively large, the minimum value φ min of the third angle φ is relatively small, making the reverse slope formed by the pixel opening Q relatively gentle, which may reduce the proportion of the light-emitting area in the sub-pixel area. Therefore, by the maximum value φ max of the third angle φ and the minimum value φ minA setting where the difference is greater than 0 and less than or equal to 6° can make the light-emitting area in the sub-pixel region relatively large, which can improve the efficiency of the light-emitting substrate 200.

[0149] As another possible implementation, for example Figure 12B , the first boundary line includes a first curve W1; or, for example Figure 12C as shown, the first boundary line includes a broken line; or, for example Figure 12D as shown, the first boundary line includes a serrated line. In this case, the end point of the first boundary line far from the substrate 210 can be taken as the first end point ZA, and the end point of the first boundary line close to the substrate 210 can be taken as the second end point ZB. Connect the first end point ZA and the second end point ZB to obtain a second straight line Z4. The included angle between the second straight line Z4 and the first reference line C1 can be used as the first angle α.

[0150] Here, the first end point ZA can also be understood as the edge point (i.e., the outermost point at the top) of the end face of the pixel opening Q far from the substrate 210, and the second end point ZB can also be understood as the edge point (i.e., the outermost point at the bottom) of the end face of the pixel opening Q close to the substrate 210.

[0151] It should be noted that the above first angle α can be obtained by intersecting the extension line of the second straight line Z4 and the first reference line C1.

[0152] It should be understood that as described above, when the first cross-section includes a trapezoidal cross-section K, the orthographic projection (hereinafter referred to as the first orthographic projection) of the surface of the pixel defining layer 220 far from the substrate 210 on the substrate 210 does not completely overlap with the orthographic projection (hereinafter referred to as the second orthographic projection) of the surface of the pixel defining layer 220 close to the substrate 210 on the substrate 210. In this case, the non-overlapping part of the first orthographic projection with the second orthographic projection has a first width n, and the dimension of the pixel defining layer 220 along the first direction X is h, then tanα = h / n.

[0153] In some embodiments, for example Figure 11 and Figures 12A to 12D as shown, the dimension of the pixel defining layer 220 along the first direction X is greater than 0 and less than 1000 nm, and the range of the first angle α is 20° to 50°. At this time, the range of tanα is 0.364 to 1.19.

[0154] Exemplarily, when the dimension of the pixel defining layer 220 along the first direction X is greater than 0 and less than 1000 nm, the material of the pixel defining layer 220 can be an inorganic material, such as silicon nitride (such as SiN) or silicon oxide (such as SiOx), etc.

[0155] Exemplarily, the size of the pixel defining layer 220 along the first direction X can be 10 nm, 100 nm, 300 nm, 500 nm, 700 nm, 850 nm, or 1000 nm.

[0156] Exemplarily, when the size of the pixel defining layer 220 along the first direction X is greater than 0 and less than 1000 nm, the range of the first angle α is 30° to 45°. At this time, the range of tanα is 0.577 to 1.

[0157] Exemplarily, when the size of the pixel defining layer 220 along the first direction X is greater than 0 and less than 1000 nm, the first angle α can be 20°, 30°, 35°, 45°, 50°, etc.

[0158] It can be understood that when the size of the pixel defining layer 220 along the first direction X is greater than 0 and less than 1000 nm, the size of the pixel defining layer 220 along the first direction X is relatively small. When the first angle α is fixed, the pixel defining layer 220 blocks the functional film group 130 relatively less. Therefore, by setting the range of the first angle α to be 20° to 50°, the proportion of the part blocked by the pixel defining layer 220 in the functional film group 130 can be within a reasonable range, which can improve the light emission uniformity of the light emitting device 100 and increase the light emission efficiency of the light emitting device 100.

[0159] In some embodiments, as Figure 11 and Figures 12A to 12D shown, the size range of the pixel defining layer 220 along the first direction X is 1 μm to 3 μm, and the range of the first angle α is 30° to 70°. At this time, the range of tanα is 0.57 to 2.75.

[0160] Exemplarily, when the size range of the pixel defining layer 220 along the first direction X is 1 μm to 3 μm, the material of the pixel defining layer can be an organic material or an inorganic material. The organic material is, for example, a cured photoresist or a resin material, etc.; the inorganic material is, for example, an insulating material such as silicon nitride or silicon oxide.

[0161] Exemplarily, the size of the pixel defining layer 220 along the first direction X can be 1 μm, 1.2 μm, 1.8 μm, 2.1 μm, 2.7 μm, or 3 μm.

[0162] Exemplarily, when the size range of the pixel defining layer 220 along the first direction X is 1 μm to 3 μm, the range of the first angle α is 45° to 70°. At this time, the range of tanα is 1 to 2.75.

[0163] Exemplarily, when the size of the pixel defining layer 220 in the first direction X ranges from 1 μm to 3 μm, the range of the first angle α is from 30° to 45°. At this time, the range of tanα is from 0.57 to 1.

[0164] Exemplarily, when the size of the pixel defining layer 220 in the first direction X ranges from 1 μm to 3 μm, the first angle α can be 30°, 40°, 55°, 65°, 70°, etc.

[0165] It can be understood that when the size of the pixel defining layer 220 in the first direction X ranges from 1 μm to 3 μm, the size of the pixel defining layer 220 in the first direction X is relatively large. When the first angle α is fixed, the pixel defining layer 220 blocks relatively more of the functional film group 130. Therefore, by setting the range of the first angle α to be from 30° to 70°, the proportion of the part blocked by the pixel defining layer 220 in the functional film group 130 can be within a reasonable range, which can improve the light emission uniformity of the light emitting device 100 and increase the light emission efficiency of the light emitting device 100.

[0166] In some embodiments, as Figure 11 and Figures 12A to 12D shown, the size of the pixel defining layer 220 in the first direction X is greater than 3 μm, and the range of the first angle α is from 45° to 80°. At this time, the range of tanα is from 1 to 5.6.

[0167] Exemplarily, when the size of the pixel defining layer 220 in the first direction X is greater than 3 μm, the material of the pixel defining layer can be an organic material or an inorganic material. Examples of the organic material include cured photoresist or resin material, etc.; examples of the inorganic material include insulating materials such as silicon nitride or silicon oxide.

[0168] Exemplarily, the size of the pixel defining layer 220 in the first direction X can be 3 μm, 3.5 μm, 4.1 μm, 5.0 μm, 7.0 μm, or 10 μm.

[0169] Exemplarily, when the size of the pixel defining layer 220 in the first direction X is greater than 3 μm, the first angle α can be 45°, 60°, 65°, 70°, 80°, etc.

[0170] It can be understood that when the size of the pixel defining layer 220 in the first direction X is greater than 3 μm, the size of the pixel defining layer 220 in the first direction X is relatively large. When the first angle α is fixed, the pixel defining layer 220 blocks relatively more of the functional film group 130. Therefore, by setting the range of the first angle α to be from 45° to 80°, the proportion of the part blocked by the pixel defining layer 220 in the functional film group 130 can be within a reasonable range, which can improve the light emission uniformity of the light emitting device 100 and increase the light emission efficiency of the light emitting device 100.

[0171] In some embodiments, the surface of the first electrode 110 away from the substrate 210 includes a second reference line C2 coplanar with the trapezoidal cross-section K. Wherein, there is a first intersection line between the trapezoidal cross-section K and the pixel defining layer 220; the included angle γ between the first intersection line and the second reference line C2 is greater than 0° and less than 90°.

[0172] Exemplarily, the included angle γ between the first intersection line and the second reference line C2 can be 10°, 20°, 32°, 40°, 55°, 60°, 70° or 90°, etc.

[0173] In some examples, the first reference line C1 is parallel to the second reference line C2. At this time, the included angle γ between the first intersection line and the second reference line C2 is equal to the first angle α.

[0174] Here, for the exemplary description of the first intersection line, reference can be made to the aforementioned exemplary description of the first curve W1, which will not be elaborated here. For the exemplary description of the method of obtaining the included angle γ between the first intersection line and the second reference line C2, reference can be made to the aforementioned exemplary description of the first angle α, which will not be elaborated here.

[0175] It should be noted that as Figure 11 shown, when the first intersection line is the first straight line Z1, the included angle γ between the first straight line Z1 and the extension line of the second reference line C2 can be obtained by intersecting the first straight line Z1 and the extension line of the second reference line C2. As Figure 12A shown, when the first intersection line is the first curve W1, the included angle γ between the tangent H1 of the first curve W1 and the extension line of the second reference line C2 can be obtained by intersecting the tangent H1 of the first curve W1 and the extension line of the second reference line C2.

[0176] In some embodiments, as Figure 12A shown, in the case where the intersection line between the trapezoidal cross-section K and the pixel defining layer 220 includes the first curve W1, the maximum value γ max of the included angle γ between the tangent H1 of the first curve W1 and the second reference line C2, and the minimum value γ min of the included angle γ between the tangent H1 of the first curve W1 and the second reference line C2 have a difference greater than 0 and less than or equal to 6°, for example, 1°, 2°, 3.6°, 4°, 5° or 6°.

[0177] Similarly to the foregoing part, when the included angle γ between the first intersection line and the second reference line C2 is small, in the trapezoidal cross-section K, the side K1 relatively far from the substrate 210 (see Figure 7) is smaller than the size of the edge K2 relatively close to the base substrate 210; in this way, firstly, it can prevent the charge from being transmitted laterally on the common film group 130X; secondly, it can improve the uniformity of the formed functional film group 130.

[0178] In some embodiments, Figure 13 As shown, the first electrode 110 is formed before the pixel defining layer 220. At this time, the edge portion of the pixel defining layer 220 may cover the edge portion of the first electrode 110, or the edge portion of the pixel defining layer 220 may contact the edge portion of the first electrode 110. In this case, there is no gap between the first electrode 110 and the pixel defining layer 220.

[0179] like Figure 13 As shown, in the case where the edge portion of the pixel defining layer 220 can cover the edge portion of the first electrode 110, when the pixel defining layer 220 is formed, the material of the pixel defining layer 220 will replicate the pattern shape of the first electrode 110, and at this time, a groove J generated by the above-mentioned replication effect will be formed on the surface of the pixel defining layer 220 on the side away from the base substrate 210. In some examples, when the second electrode 120 is formed, the material of the second electrode 120 will fill the groove J.

[0180] In some embodiments, Figure 12A and Figure 14 As shown, a gap V is left between the first electrode 110 and the pixel defining layer 220 ; a size L3 of the gap V along the second direction Y ranges from 1 nm to 200 nm; and the second direction Y is perpendicular to the first direction X.

[0181] It should be understood that the shape of the first electrode 110 and / or the pixel defining layer 220 may be irregular, so that the size L3 corresponding to each location of the gap V arranged in the first direction X may be different.

[0182] To this end, for the size of the gap V along the second direction Y, some embodiments of the present disclosure provide a possible measurement method, such as Figure 14 As shown, during measurement, first, a cross section R of the first electrode 110 perpendicular to the base substrate 210 can be made, and the shape of the cross section R can be a rectangle, a trapezoid or an inverted trapezoid; then a midpoint R1 can be taken on the side of the cross section R, and then a line segment RL parallel to the second direction Y is made with the midpoint R1 as an endpoint, so that the other endpoint of the line segment RL is the boundary point R2 of the pixel defining layer 220. At this time, the distance between the midpoint R1 and the boundary point R2 is the size L3 of the gap V along the second direction Y. It should be understood that the midpoint R1 in this method can also be replaced by other feature points, such as a point of 1 / 3 or 2 / 3 of the length of the side.

[0183] Exemplarily, the dimension L3 of the gap V in the second direction Y ranges from 5 nm to 30 nm.

[0184] Exemplarily, the dimension L3 of the gap V in the second direction Y ranges from 20 nm to 50 nm.

[0185] Exemplarily, the dimension L3 of the gap V in the second direction Y ranges from 30 nm to 80 nm.

[0186] Exemplarily, the dimension L3 of the gap V in the second direction Y can be 1 nm, 5 nm, 10 nm, 20 nm, 30 nm, 50 nm, 80 nm, 100 nm, 155 nm, 200 nm, etc.

[0187] It should be understood that when there is a gap V between the first electrode 110 and the pixel defining layer 220, and at least some of the film layers of the functional film stack 130 are prepared by a solution process, the morphology of the first electrode 110, the morphology of the gap V, and the edge morphology of the pixel defining layer 220 together form the morphology of the surface in contact with the ink. The influence of the morphology of the surface in contact with the ink on the morphology of the film formed by the ink will be analyzed below.

[0188] Generally, when depositing a film layer on the surface of a micro-nano structure, the deposition results can be divided into two types, one is replication, and the other is leveling. For each functional film layer in the functional film stack 130 of an OLED light-emitting device or a QLED light-emitting device, it is basically impossible to achieve a complete leveling effect. Therefore, it is closer to forming replication results to varying degrees. Here, the reason for describing it as replication results to varying degrees is that factors such as the thickness of each functional film layer and the viscosity of the solution for forming each functional film layer may be different. Therefore, when forming each functional film layer in the functional film stack 130 of an OLED light-emitting device or a QLED light-emitting device, each thin film will exhibit the same, similar, or related shape as the base surface (such as the surface in contact with the ink). For example, if the morphology of the surface in contact with the ink is concave, then the thin film deposited thereon will also exhibit a morphology state similar or related to the concave shape.

[0189] Figure 15 It is a possible morphology change diagram when depositing the material of the thin film M2 layer by layer in the case where the first angle is acute and there is a gap between the first electrode 110 and the pixel defining layer 220. As Figure 15 can be seen, the material of the deposited thin film M2 will fill the gap V. Here, the material of the thin film M2 includes, for example, molecules and / or nanoparticles for forming the functional film layer. When the thin film M2 is a wet film, the material of the thin film M2 can also include a solvent adapted to the dissolved material. As Figure 15As shown, when the amount of the material of the deposited thin film M2 is small (i.e., when the film thickness of the deposited thin film M2 is thin, for example, the single-layer thin film M2 shown in (a) of Figure 15 ), the deposited thin film M2 tends to conform, and the surface morphology of the deposited thin film M2 also shows a certain degree of depression. When the amount of the material of the thin film M2 deposited in the gap V gradually increases (for example: depositing multiple layers of the thin film M2, or when the film thickness of the deposited thin film M2 is thick), the gap V will be gradually filled, and the filling effect becomes more and more obvious (as can be seen in the situation shown in (b) of Figure 15 ). In other words, while conforming, there is a filling effect on the gap V, and finally the gap V will be completely filled, forming the morphology shown in (c) of Figure 15 or Figure 15 (d). Among them, Figure 15 (c) and Figure 15 (d) show the morphology when the number of layers of the deposited thin film M2 is large enough and / or the film thickness of the deposited thin film M2 is thick enough. When the gap V has been completely filled, the edge of the thin film M2 will show different morphologies due to the different wettabilities of the pixel defining layer 220, making the contour of the thin film M2 present a concave surface (such as (c) of Figure 15 ) or a convex surface (such as (d) of Figure 15 ).

[0190] Therefore, based on the analysis from the perspective of the force on the ink on the slope of the pixel defining layer in the foregoing part and the analysis from the perspective of the morphology of the surface in contact with the ink in this part, it can be relatively determined that when the first angle is an acute angle, in an OLED light-emitting device or a QLED light-emitting device, when at least some functional film layers of the functional film group 130 are prepared on the surface of the micro-nano structure by a solution process, the morphology of the formed thin film can be improved to a large extent, and the film formation uniformity of the functional film group 130 can be greatly improved.

[0191] Based on the above principle, in some examples, such as Figure 16 and Figure 15 (c), the edge of the functional film group 130 close to the pixel defining layer 220 bends towards the substrate 210; in some examples, such as Figure 14 and Figure 15 (d), the edge of the functional film group 130 close to the pixel defining layer 220 bends away from the substrate 210.

[0192] Understandably, when there is a gap V between the first electrode 110 and the pixel defining layer 220, and the dimension L3 of the gap V in the second direction Y ranges from 1 nm to 200 nm, the film forming uniformity of the functional film group 130 can be greatly improved. Thus, as described above, firstly, the uniformity of the performance such as efficiency and lifespan of different sub-pixels can be improved; secondly, when performing circuit compensation on the substrate 210 or adjusting the image quality uniformity of the light-emitting substrate 200, the operation is more convenient and simple; thirdly, it is beneficial to the efficiency stability and lifespan maintenance of the light-emitting substrate 200.

[0193] In some embodiments, as Figure 17 shown, the surface of the first electrode 110 far from the substrate 210 includes a first line segment E1 coplanar with the trapezoidal cross-section K; the surface of the second electrode 120 close to the substrate 210 includes a second line segment E2 coplanar with the trapezoidal cross-section K. The two boundaries of the orthographic projection of the first line segment E1 on the substrate 210 correspond to and overlap with the two boundaries of the orthographic projection of the second line segment E2 on the substrate 210, and overlap with the boundary of the orthographic projection of the end QC of the pixel opening Q far from the substrate 210 on the substrate 210. There is a first distance D1 between the first line segment E1 and the second line segment E2. The absolute value of the difference between the first distance D1 and the first reference distance D1X, and the ratio to the first reference distance D1X is less than or equal to 20%. The first reference distance D1X is the first distance D1 corresponding to the center of the first line segment E1.

[0194] Here, as a possible obtaining method, the first distance D1 can be the distance between a point on the first line segment E1 arranged along the first direction X and a point on the second line segment E2.

[0195] Exemplarily, the first distance D1 can be measured by using FIB-TEM, white light interferometer, scratch tester, step profiler, atomic force microscope (AFM), scanning electron microscope (SEM), etc.

[0196] It should be understood that at the edge of the functional film group 130 close to the pixel defining layer 220, it may bend towards the substrate 210; or, in the case where it may bend away from the substrate 210, the first line segment E1 may be a curve that bends towards the substrate 210 or away from the substrate 210. Therefore, the first distance D1 may be greater than the first reference distance D1X or less than the first reference distance D1X at the edge.

[0197] Exemplarily, the ratio of the absolute value of the difference between the first pitch D1 and the first reference pitch D1X to the first reference pitch D1X is less than or equal to 10%.

[0198] Exemplarily, the ratio of the absolute value of the difference between the first pitch D1 and the first reference pitch D1X to the first reference pitch D1X is less than or equal to 5%.

[0199] Exemplarily, the ratio of the absolute value of the difference between the first pitch D1 and the first reference pitch D1X to the first reference pitch D1X can be 0, 2%, 4%, 5%, 8.5%, 10%, 13%, 16% or 20%, etc.

[0200] It should be understood that when the first cross-section is a trapezoidal cross-section K, in the case where the two boundaries of the orthographic projection of the first line segment E1 on the substrate 210 overlap with the boundary of the orthographic projection of the end QC of the pixel opening Q away from the substrate 210 on the substrate 210, the region corresponding to the first line segment E1 is the light-emitting region BB2 in the sub-pixel region. Similarly, in the case where the two boundaries of the orthographic projection of the second line segment E2 on the substrate 210 overlap with the boundary of the orthographic projection of the end QC of the pixel opening Q away from the substrate 210 on the substrate 210, the region corresponding to the second line segment E2 is the light-emitting region BB2 in the sub-pixel region. In this case, the first pitch D1 between the first line segment E1 and the second line segment E2 can be understood as the film thickness of the functional film group 130 in the light-emitting region BB2. Moreover, as Figure 7 and Figure 8 shown, when the first cross-section includes a trapezoidal cross-section K and the dimension L1 of the side K1 in the trapezoidal cross-section K is less than or equal to the dimension L2 of the side K2, the light-emitting region BB2 is approximately equal to the uniform light-emitting region AA2.

[0201] It can be understood that through the above settings, the film thickness of the functional film group 130 in the light-emitting region BB2 can be made relatively uniform. Thus, as described above, first, the uniformity of the performance such as the efficiency and lifespan of different sub-pixels can be improved; second, when performing circuit compensation on the substrate 210 or adjusting the image quality uniformity of the light-emitting substrate 200, the operation is more convenient and simple; third, it is beneficial to the efficiency stability and lifespan maintenance of the light-emitting substrate 200.

[0202] The above is an exemplary description when the first cross-section of the pixel opening Q includes a trapezoidal cross-section K. In some examples, the pixel defining layer 220 includes multiple sub-layers, such that the area S1 of the orthographic projection of the first part QA (see Figure 2 ) on the substrate 210 is less than or equal to the area S2 of the orthographic projection of the second part QB on the substrate 210. Some embodiments in this case will be exemplarily introduced below.

[0203] In some embodiments, such as Figure 18 and Figure 19 shown, the pixel defining layer 220 includes a first sub-layer 221 and a second sub-layer 222 arranged along the first direction X. The first sub-layer 221 is farther from the substrate 210 than the second sub-layer 222. The first sub-layer 221 includes a plurality of first sub-openings Q1; the second sub-layer 222 includes a plurality of second sub-openings Q2. The plurality of second sub-openings Q2 are correspondingly aligned with the plurality of first sub-openings Q1; the edge Q1S of the first sub-opening Q1 is closer to the center of the pixel opening Q than the edge Q2S of the second sub-opening Q2.

[0204] It should be understood that when the plurality of second sub-openings Q2 are correspondingly aligned with the plurality of first sub-openings Q1, the plurality of second sub-openings Q2 are correspondingly communicated with the plurality of first sub-openings Q1; moreover, each first sub-opening Q1 and the second sub-opening Q2 opposite thereto constitute the pixel opening Q.

[0205] Here, the center of the pixel opening Q is, for example, the center line F of the pixel opening Q. In some examples, the center lines of the first sub-opening Q1 and the second sub-opening Q2 coincide. At this time, the center line F of the pixel opening Q is both the center line of the first sub-opening Q1 and the center line of the second sub-opening Q2. In still other examples, the center lines of the first sub-opening Q1 and the second sub-opening Q2 do not coincide. At this time, the center line F of the pixel opening Q can be selected as the center line of the first sub-opening Q1 or the center line of the second sub-opening Q2, and there is no limitation here.

[0206] Here, the edge Q1S of the first sub-opening Q1 is closer to the center of the pixel opening Q than the edge Q2S of the second sub-opening Q2. It can be understood that the distance L4 between the edge Q1S of the first sub-opening Q1 and the center line F of the pixel opening Q is less than the distance L5 between the edge Q2S of the second sub-opening Q2 and the center line F of the pixel opening Q.

[0207] It can be understood that when the edge Q1S of the first sub-opening Q1 is closer to the center of the pixel opening Q than the edge Q2S of the second sub-opening Q2, the material of the common film layer entering the pixel opening Q is less likely to cover the side wall of the pixel opening Q. In this way, the common film group 130X is at least disconnected at the side wall of the pixel opening Q, so that the common film group 130X cannot form a continuously connected structure. In this way, it is possible to prevent charge from being laterally transmitted on the common film group 130X, that is, it is possible to prevent the leakage of lateral current between sub-pixels and solve the problem of color crosstalk.

[0208] Based on this, in some embodiments, such as Figure 7 and Figure 20As shown, the light-emitting substrate 200 further includes a common film group 130X and a plurality of light-emitting devices 100. The common film group 130X is located on the surface of the pixel defining layer 220 away from the substrate 210. The functional film group 130 is located between the first electrode 110 and the second electrode 120. Among them, at least some of the film layers in the functional film group 130 are of the same layer and the same material as the common film group 130X, and the film group in the functional film group 130 that is of the same layer and the same material as the common film group 130X is in a disconnected state from the common film group 130X.

[0209] Here, for the description of the functional film group 130 and the common film group 130X, reference can be made to the foregoing exemplary description of the functional film group 130 and the common film group 130X, which will not be elaborated here.

[0210] It can be understood that through the above arrangement, the common film group 130X is in a disconnected state, so that the common film group 130X cannot form a completely connected structure. In this way, it is possible to prevent the charge from being laterally transmitted on the common film group 130X, that is, it is possible to prevent the leakage of the lateral current between sub-pixels, and the problem of color crosstalk can be solved.

[0211] In some embodiments, on the pixel defining layer 220 including a first sub-layer 221 (material is SiO) and a second sub-layer 222 (material is cured photoresist) and with a pixel density of 500 PPI, the material PEDOT of the hole injection layer is spin-coated, and the obtained cross-sectional morphology is as Figure 21 shown, from Figure 21 it can be seen that the material PEDOT of the hole injection layer cannot be continuous on the pixel defining layer 220, which proves that some embodiments of the present disclosure can effectively block the common film group, and thus solve the crosstalk caused by the leakage of the lateral current.

[0212] It should be noted that the shape of the first sub-opening Q1 and the shape of the second sub-opening Q2 may be the same or different. Moreover, there are no restrictions on the shape of the first sub-opening Q1 and / or the shape of the second sub-opening Q2 here.

[0213] In some embodiments, the first sub-opening Q1 has a first sub-cross-section K1 perpendicular to the substrate 210, and the first sub-cross-section K1 includes a trapezoidal cross-section, an inverted trapezoidal cross-section, or a rectangular cross-section. The second sub-opening Q2 has a second sub-cross-section K2 perpendicular to the substrate 210, and the second sub-cross-section K2 includes a trapezoidal cross-section, an inverted trapezoidal cross-section, a rectangular cross-section, or a concave cross-section.

[0214] For example, as Figure 18 shown, the first sub-cross-section K1 includes a rectangular cross-section. The second sub-cross-section K2 includes a rectangular cross-section.

[0215] For example, as Figure 19As shown, the first sub-section K1 includes a rectangular section. The second sub-section K2 includes a concave section.

[0216] Here, the second sub-section K2 includes a concave section, which can be understood as the second sub-section K2 including an intersection line W2 between it and the pixel defining layer 220, and the intersection line W2 includes at least one concave portion. For example, as Figure 19 shown, the intersection line W2 includes a concave portion.

[0217] In some embodiments, as Figure 19 shown, when the second sub-section K2 includes a concave section, there is a second intersection line W3 between the concave section and the pixel defining layer 220. There is a second angle θ between the perpendicular line Z2 to the tangent line at one end of the second intersection line W3 and the perpendicular line Z3 to the tangent line at the other end. The range of the second angle θ is 20° to 90°.

[0218] It should be understood that when the second intersection line W3 is an arc-shaped line, the second angle θ is the central angle corresponding to the arc-shaped line.

[0219] Exemplarily, the range of the second angle θ is 20° to 60°.

[0220] Exemplarily, the second angle θ can be 20°, 30°, 40°, 45°, 50°, 60°, 80°, 90°, etc.

[0221] It can be understood that when the second angle θ is larger, the curvature of the concave section is relatively larger, and in this way, the process difficulty of forming the second sub-opening Q2 is relatively higher. Therefore, by setting the range of the second angle θ to be 20° to 90°, the curvature of the concave section can be made relatively smaller, so that the process difficulty of forming the second sub-opening Q2 can be reduced, and the process feasibility of forming the second sub-opening Q2 can be improved.

[0222] In some embodiments, the second sub-opening Q2 is formed by a dry etching process. Moreover, when forming the second sub-opening Q2, the etching gas acts on the part of the second sub-layer 222 far from the substrate 210 for a relatively long time and acts on the part of the second sub-layer 222 close to the substrate 210 for a relatively short time, so that the second sub-section K2 presents a plurality of concave sections, and the morphologies of the plurality of concave sections are somewhat different. The following gives an exemplary description of the somewhat different morphologies of the plurality of concave sections.

[0223] In some embodiments, as Figure 22 and Figure 23 shown, when the second sub-section K2 includes a plurality of concave sections, the second angle θ corresponding to the concave section relatively far from the substrate 210 is greater than or equal to the second angle θ corresponding to the concave section relatively close to the substrate 210.

[0224] For example, as Figure 22 shown, the second sub-section K2 includes two concave sections. The second angle θ1 corresponding to the concave section relatively far from the substrate 210 is greater than the second angle θ2 corresponding to the concave section relatively close to the substrate 210.

[0225] It should be understood that in the case where the second sub-section K2 includes a plurality of concave sections, the second sub-section K2 further includes a convex portion located between two adjacent concave sections.

[0226] Understandably, through the above settings, on the basis of solving the color crosstalk problem, the common film group 130X can be more easily formed in a disconnected state at the part of the side wall of the pixel opening Q far from the substrate 210. In this way, the problem of light emission in the edge light-emitting region mentioned above can be suppressed.

[0227] In some embodiments, as Figure 18 and Figure 19 shown, the dimension L6 of the first sub-layer 221 along the first direction X is smaller than the dimension L7 of the second sub-layer 222 along the first direction X.

[0228] Understandably, when the dimension L6 of the first sub-layer 221 along the first direction X is smaller than the dimension L7 of the second sub-layer 222 along the first direction X, the second sub-layer 222 is relatively thick and has a relatively large proportion in the pixel defining layer 220. In this way, when forming the second sub-opening Q2, the operable thickness space is relatively large, making it easier for the second sub-opening Q2 to be formed in the direction away from the center of the pixel opening Q, making the edge of the second sub-opening Q2 easier to be away from the center of the pixel opening Q. Moreover, the concave shape of the second sub-opening Q2 can be adjusted and controlled. In this way, the process feasibility and process controllability when forming the second sub-opening Q2 can be improved.

[0229] In some embodiments, as Figure 18 and Figure 19 shown, the dimension L6 of the first sub-layer 221 along the first direction X is greater than or equal to 10 nm and less than or equal to 200 nm.

[0230] Exemplarily, the dimension L6 of the first sub-layer 221 along the first direction X can be 10 nm, 30 nm, 60 nm, 90 nm, 130 nm, 165 nm, 200 nm, etc.

[0231] Understandably, through the above settings, the dimension L6 of the first sub-layer 221 along the first direction X is relatively small, making the proportion of the first sub-layer 221 in the pixel defining layer 220 relatively small, and making the proportion of the second sub-layer 222 in the pixel defining layer 220 relatively large. In this way, as described above, the process feasibility and process controllability when forming the second sub-opening Q2 can be improved.

[0232] In some embodiments, as Figure 18 and Figure 19 shown, the dimension L7 of the second sub-layer 222 along the first direction X is greater than 0.5 μm and less than or equal to 10 μm.

[0233] Exemplarily, the dimension L7 of the second sub-layer 222 along the first direction X can be 0.5 μm, 3.5 μm, 5.5 μm, 7.0 μm, 9.0 μm, 10 μm, etc.

[0234] It can be understood that through the above settings, the dimension L7 of the second sub-layer 222 along the first direction X is relatively large, which can make the proportion of the second sub-layer 222 in the pixel defining layer 220 relatively large. Thus, as described above, the process feasibility and process controllability when forming the second sub-opening Q2 can be improved.

[0235] In some examples, the etching conditions for inorganic materials are relatively harsh compared to organic materials. When etching an inorganic film layer (for example, an inorganic film layer containing SiO or SiN) through a dry etching process, it may be necessary to use a fluorine (F)-containing gas (for example: CF4, CHF3) atmosphere, and the fluorine-containing gas can cause a change in the elemental content on the surface of the first electrode 110 (for example: the first electrode 110 containing Indium Tin Oxide (ITO)), causing damage to the first electrode 110.

[0236] In some embodiments, as Figure 18 and Figure 19 shown, the material of the first sub-layer 221 includes an inorganic material.

[0237] Exemplarily, the material of the first sub-layer 221 can be SiN or SiOx, etc. Of course, it can also be other inorganic materials.

[0238] It can be understood that on the one hand, when the thickness of the inorganic film layer is relatively thick, a relatively large stress will be generated, causing glass warping and even glass breakage, which will affect the yield of the inorganic film layer; therefore, when the material of the first sub-layer 221 includes an inorganic material, the dimension of the first sub-layer 221 along the first direction X can be relatively small, so that the probability of generating a relatively large stress can be reduced, avoiding glass warping or glass breakage, and improving the yield of the first sub-layer 221. On the other hand, when the material of the first sub-layer 221 includes an inorganic material, the inorganic material can be located relatively far from the substrate 210. In this way, the process of forming the first sub-opening Q1 has a relatively small impact on the first electrode 110. For example, when the process of forming the first sub-opening Q1 is a dry etching process, through the above settings, the influence of the possible fluorine-containing gas (for example: CF4, CHF3) atmosphere on the first electrode 110 can be avoided.

[0239] In some embodiments, such as Figure 18 and Figure 19 shown, the material of the second sub-layer 222 includes an organic material.

[0240] Exemplarily, the material of the second sub-layer 222 can be a cured photoresist or a resin material, etc., and of course it can also be other organic materials.

[0241] It can be understood that, on the one hand, it is relatively easy for the organic material to form a thicker film layer. When the material of the second sub-layer 222 includes an organic material, the size of the second sub-layer 222 along the first direction X can be larger. Thus, as described above, the process feasibility and process controllability when forming the second sub-opening Q2 can be improved. On the other hand, through the above setting, the second sub-layer 222 can form a protective effect above the first electrode 110, reducing the influence of the formation process of the first sub-layer 221 on the first electrode 110; for example, it can avoid the influence of a possible fluorine-containing gas (such as: CF4, CHF3) atmosphere on the first electrode 110, so that the fluorine-containing gas will not damage the first electrode 110.

[0242] On the other hand, some embodiments of the present disclosure also provide a method for preparing a light-emitting substrate 200, such as Figure 2 and Figure 24 shown, the preparation method includes S1 to S2.

[0243] S1: Form a substrate substrate 210.

[0244] Exemplarily, forming the substrate substrate 210 includes S1.1 to S1.2.

[0245] S1.1: Provide a substrate 211.

[0246] S1.2: Form a driving circuit layer 212 on one side of the substrate 211 along the first direction X.

[0247] In some examples, forming the driving circuit layer 212 includes forming a plurality of conductive layers and forming a plurality of insulating layers. Among them, the plurality of conductive layers can be configured to form a plurality of pixel driving circuits 2121 and a plurality of signal lines for driving the pixel driving circuits 2121. The plurality of insulating layers can include at least one gate insulating layer, at least one interlayer dielectric layer, and at least one planarization layer.

[0248] S2: Form a pixel definition layer 220 on one side of the substrate 210 along the first direction X. The pixel definition layer 220 includes a plurality of pixel openings Q; the pixel openings Q include a first part QA and a second part QB arranged along the first direction X. Among them, the first part QA is farther from the substrate 210 than the second part QB, and the area of the orthographic projection of the first part QA on the substrate 210 is less than or equal to the area of the orthographic projection of the second part QB on the substrate 210.

[0249] The beneficial effects achievable by the preparation method of the above-mentioned light-emitting substrate 200 are the same as those achievable by the above-mentioned light-emitting substrate 200, and will not be elaborated here.

[0250] In some embodiments, after S1 and after S2, S1A is further included.

[0251] S1A: Form a patterned first electrode 110 on one side of the substrate 210 along the first direction X.

[0252] Exemplarily, the process of forming the first electrode 110 can be an etching process or an evaporation process.

[0253] Exemplarily, the material of the first electrode 110 can be a metal oxide material, such as indium tin oxide or indium zinc oxide (Indium Zinc Oxide, IZO).

[0254] It should be understood that in the case where the preparation method includes S1A, in S2, the pixel definition layer 220 can be formed on the side of the first electrode 110 away from the substrate 210.

[0255] In some examples, the first part QA and the second part QB can be formed by one process. For example, when the first cross-section is a trapezoidal cross-section K, the first part QA and the second part QB can be formed by one etching process. For example: an etching process using a negative photoresist.

[0256] In still other examples, the first part QA and the second part QB can be formed by different processes. For example, the pixel definition layer 220 can include a first sub-layer 221 and a first sub-layer 221. The first sub-layer 221 includes a first sub-opening Q1, and the second sub-layer 222 includes a second sub-opening Q2. The first part QA is formed during the process of forming the first sub-opening Q1; the second part QB is formed during the process of forming the second sub-opening Q2.

[0257] In some embodiments, as Figure 25 shown, the preparation method further includes forming a patterned first electrode 110. The pixel definition layer 220 includes a first sub-layer 221 and a second sub-layer 222 arranged along the first direction X.

[0258] Form a pixel defining layer 220, including S2.1 to S2.5.

[0259] S2.1: Form a second initial layer 222a on one side of the substrate 210 along the first direction X.

[0260] Exemplarily, the material of the second initial layer 222a can be a cured photoresist.

[0261] Exemplarily, the process of forming the second initial layer 222a can be a coating process. Moreover, in S2.1, after the coating process, the material of the second initial layer 222a can also be cured at a high temperature.

[0262] It should be noted that Figure 25 In the figure, it shows that the second initial layer 222a completely covers the first electrode 110, just to illustrate that the second initial layer 222a can be formed on the side of the first electrode 110 far from the substrate 210. In actual application, the second initial layer 222a may not completely cover the first electrode 110. That is to say, the second initial layer 222a can include a part covering the first electrode 110, and can also include a part not covering the first electrode 110. For example, it can also include a part located between two adjacent first electrodes 110, and there is no limit here.

[0263] S2.2: Form a first initial layer 221a on the side of the second initial layer 222a far from the substrate 210.

[0264] Exemplarily, the process of forming the first initial layer 221a can be a thin film deposition process, such as a chemical vapor deposition process (Chemical Vapor Deposition, CVD), a physical vapor deposition process (Physical Vapor Deposition, PVD), an atomic layer deposition process (Atomic Layer Deposition, ALD) or an electroplating process.

[0265] S2.3: Form a mask layer PR on the side of the first initial layer 221a far from the second initial layer 222a, and the mask layer PR exposes the target area on the surface of the first initial layer 221a far from the second initial layer 222a.

[0266] Exemplarily, the method of forming the mask layer PR can include: coating a photoresist, exposing, and developing to remove the material located in the target area.

[0267] S2.4: Use a first dry etching process to etch the first initial layer 221a to form a first sub-layer 221. Among them, the first dry etching process uses a first gas atmosphere.

[0268] Exemplarily, the first dry etching process can be a reactive ion etching (RIE) process, or an inductively coupled plasma (ICP) process.

[0269] Exemplarily, the gas in the first gas atmosphere can include fluorine-containing gases (e.g., CF4 or CHF3).

[0270] It can be understood that when etching the first initial layer 221a, the second initial layer 222a can form a protective effect on the surface of the first electrode 110 to prevent the first gas atmosphere from damaging the first electrode 110.

[0271] S2.5: Remove the mask layer PR (see Figure 25 S2.5-1 in), and use a second dry etching process to etch the second initial layer 222a to form a second sub-layer 222. Among them, the second dry etching process uses a second gas atmosphere, and at least one of the elements contained in the second gas is the same as the element contained in the first electrode.

[0272] Exemplarily, the method for removing the mask layer PR is stripping removal.

[0273] Exemplarily, the gas in the second gas atmosphere can include oxygen (O2).

[0274] It can be understood that when etching the second initial layer 222a, the first sub-layer 221 formed in S2.4 can be used as a hard mask for the second dry etching process. Moreover, when at least one of the elements contained in the second gas is the same as the element contained in the first electrode, when the gas in the second gas atmosphere enters the first electrode 110, no other elements will be introduced on the surface of the first electrode 110, which can make the conductivity of the first electrode 110 relatively high. For example, the gas in the second gas atmosphere can include oxygen, and the material of the first electrode 110 includes a conductive metal oxide material (e.g., indium tin oxide or indium zinc oxide). When oxygen enters the conductive metal oxide material, no other elements will be introduced on the surface of the conductive metal oxide material.

[0275] It should be understood that when using the second dry etching process to etch the second initial layer 222a (e.g., the second initial layer 222a containing an organic photoresist), the morphology of the second sub-opening Q2 can be adjusted by the type of dry etching equipment and / or the atmosphere ratio of the etching gas.

[0276] In some examples, the second dry etching process may be a reactive ion etching (RIE) process. The RIE process has a side etching effect, which can form a concave-shaped morphology on the sidewalls of the second sub-opening Q2, making the functional film groups 130 in different pixel openings Q discontinuous.

[0277] Exemplarily, an RIE device usually has a single radio frequency source, making it difficult to achieve low-damage etching at an appropriate etching rate. The working pressure is relatively high, making it difficult to control the etching morphology. Moreover, the plasma density is relatively low, resulting in a relatively low etching rate. Therefore, when forming the second sub-layer 222 using an RIE device, it is easier to form Figure 25 the morphology shown in the sub-diagram corresponding to S2.5-2a.

[0278] In some examples, the second dry etching process may be an inductively coupled plasma (ICP) process. The ICP process has a side etching effect, which can form a concave-shaped morphology on the sidewalls of the second sub-opening Q2, making the functional film groups 130 in different pixel openings Q discontinuous.

[0279] Exemplarily, an ICP device can have two independent radio frequency sources, which can achieve high etching rate and low-damage etching. The working pressure is relatively low, which is beneficial to controlling the morphology. Moreover, the plasma density is relatively high. Therefore, when forming the second sub-layer 222 using an ICP device, it is easier to form Figure 25 the morphology shown in the sub-diagram corresponding to S2.5-2b.

[0280] In some examples, as Figure 25 shown, the intersection line of the second sub-opening Q2 formed by the second dry etching process and the pixel defining layer 220 has a certain curvature.

[0281] Exemplarily, as Figure 25 shown, the intersection line of the second sub-opening Q2 formed by RIE and the pixel defining layer 220 is more perpendicular to the substrate 210 than the intersection line of the second sub-opening Q2 formed by the ICP process and the pixel defining layer 220.

[0282] It can be understood that when forming the pixel defining layer 220 includes S2.1 to S2.5, it can prevent the gas in the first gas atmosphere from damaging the first electrode 110, and can keep the conductivity of the first electrode 110 at a relatively high level.

[0283] As described above, it is only the specific implementation manner of the present disclosure, but the protection scope of the present disclosure is not limited thereto. Any person skilled in the art within the technical scope disclosed by the present disclosure who thinks of changes or substitutions should be covered within the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure shall be subject to the protection scope of the claims described.

Claims

1. A light-emitting substrate, characterized in that, Comprising: A substrate; And A pixel defining layer located on one side of the substrate along a first direction; The pixel defining layer includes a plurality of pixel openings; The pixel openings include a first portion and a second portion arranged along the first direction; Wherein, the first portion is further away from the substrate than the second portion, and the area of the orthographic projection of the first portion on the substrate is less than or equal to the area of the orthographic projection of the second portion on the substrate.

2. The light-emitting substrate according to claim 1, wherein The pixel opening has a first cross-section perpendicular to the substrate, and the first cross-section includes a trapezoidal cross-section. In the trapezoidal cross-section, the dimension of the side relatively far from the substrate is less than or equal to the dimension of the side relatively close to the substrate.

3. The light-emitting substrate according to claim 2, characterized in that, The end face of the pixel opening close to the substrate includes a first reference line coplanar with the trapezoidal cross-section; There is a first boundary line between the trapezoidal cross-section and the pixel defining layer, and the included angle between the first boundary line and the first reference line is a first angle; the first angle is greater than 0° and less than 90°.

4. The light-emitting substrate according to claim 3, wherein The dimension of the pixel defining layer along the first direction is greater than 0 and less than 1000 nm, and the range of the first angle is 20° - 50°; or The dimension range of the pixel defining layer along the first direction is 1 μm - 3 μm, and the range of the first angle is 30° - 70°; or The dimension of the pixel defining layer along the first direction is greater than 3 μm, and the range of the first angle is 45° - 80°.

5. The light-emitting substrate according to claim 3, wherein The first boundary line includes a first curve, and the included angle between the tangent of the first curve and the first reference line is a third angle. The difference between the maximum value and the minimum value of the third angle is greater than 0 and less than or equal to 6°.

6. The light-emitting substrate according to any one of claims 2 to 5, characterized in that Also included are a plurality of light-emitting devices disposed in the plurality of pixel openings; the light-emitting devices include a first electrode and a second electrode oppositely disposed along the first direction, and the first electrode is closer to the substrate than the second electrode; the surface of the first electrode far from the substrate includes a second reference line coplanar with the trapezoidal cross-section; Wherein, there is a first boundary line between the trapezoidal cross-section and the pixel defining layer; the included angle between the first boundary line and the second reference line is greater than 0° and less than 90°.

7. The light-emitting substrate according to claim 6, wherein A gap is left between the first electrode and the pixel defining layer; the dimension range of the gap along a second direction is 1 nm - 200 nm; the second direction is perpendicular to the first direction.

8. The light-emitting substrate according to claim 7, wherein The light-emitting device further includes a functional film group located between the first electrode and the second electrode; The edge of the functional film group close to the pixel defining layer bends towards the substrate; or the edge of the functional film group close to the pixel defining layer bends away from the substrate.

9. The light-emitting substrate according to claim 6, wherein, The light-emitting device further includes a functional film group located between the first electrode and the second electrode; The surface of the first electrode away from the substrate includes a first line segment coplanar with the trapezoidal cross-section; the surface of the second electrode close to the substrate includes a second line segment coplanar with the trapezoidal cross-section; the two boundaries of the orthographic projection of the first line segment on the substrate overlap with the two boundaries of the orthographic projection of the second line segment on the substrate, and overlap with the boundary of the orthographic projection of the end of the pixel opening away from the substrate on the substrate; There is a first distance between the first line segment and the second line segment; the absolute value of the difference between the first distance and the first reference distance, and the ratio of the first reference distance, is less than or equal to 20%; The first reference distance is the first distance corresponding to the center of the first line segment.

10. The light-emitting substrate according to claim 9, characterized in that, The edge of the orthographic projection of the functional film group on the substrate overlaps with the edge of the orthographic projection of the pixel defining layer on the substrate.

11. The light-emitting substrate according to claim 1, wherein, The pixel defining layer includes a first sub-layer and a second sub-layer arranged along the first direction; the first sub-layer is farther from the substrate than the second sub-layer; The first sub-layer includes a plurality of first sub-openings; the second sub-layer includes a plurality of second sub-openings; the plurality of second sub-openings are correspondingly aligned with the plurality of first sub-openings; the edge of the first sub-opening is closer to the center of the pixel opening than the edge of the second sub-opening.

12. The light-emitting substrate according to claim 11, wherein The first sub-opening has a first sub-cross-section perpendicular to the substrate, and the first sub-cross-section includes a trapezoidal cross-section, an inverted trapezoidal cross-section or a rectangular cross-section; The second sub-opening has a second sub-cross-section perpendicular to the substrate, and the second sub-cross-section includes a trapezoidal cross-section, an inverted trapezoidal cross-section, a rectangular cross-section or a concave cross-section.

13. The light-emitting substrate according to claim 12, wherein In the case where the second sub-cross-section includes a concave cross-section, there is a second boundary line between the concave cross-section and the pixel defining layer, and there is a second angle between the perpendiculars to the tangents at one end of the second boundary line and the perpendiculars to the tangents at the other end; the range of the second angle is 20° to 90°.

14. The light-emitting substrate according to claim 13, wherein In the case where the second sub-cross-section includes a plurality of concave cross-sections, the second angle corresponding to the concave cross-section relatively farther from the substrate is greater than or equal to the second angle corresponding to the concave cross-section relatively closer to the substrate.

15. The light-emitting substrate according to claim 11, characterized in that, The dimension of the first sub-layer along the first direction is smaller than the dimension of the second sub-layer along the first direction.

16. The light-emitting substrate according to claim 15, wherein The dimension of the first sub-layer along the first direction is greater than or equal to 10 nm and less than or equal to 200 nm; and / or, the dimension of the second sub-layer along the first direction is greater than 0.5 μm and less than or equal to 10 μm.

17. The light-emitting substrate according to claim 11, wherein, The material of the first sub-layer includes an inorganic material; and / or, the material of the second sub-layer includes an organic material.

18. The light-emitting substrate according to any one of claims 11 to 17, characterized in that, Further included: A common film group located on the surface of the pixel defining layer away from the substrate; And, A plurality of light-emitting devices disposed in the plurality of pixel openings; The light-emitting device includes: A first electrode and a second electrode oppositely arranged along the first direction; and, A functional film group located between the first electrode and the second electrode; Among them, at least some of the film layers in the functional film group are of the same layer and the same material as the common film group, and the film group in the functional film group that is of the same layer and the same material as the common film group is in a disconnected state from the common film group.

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