High-efficiency power amplification circuit and corresponding circuit system

Abstract

The utility model provides a high-efficiency power amplification circuit and a corresponding circuit system. A control module outputs a control voltage, an adjusting voltage and a grid bias voltage. The numerical control attenuation module adjusts the gain of the base station signal based on the adjusting voltage, and the automatic level control module adjusts the power of the base station signal based on the control voltage. The power amplification module carries out power amplification operation on the base station signal based on the grid bias voltage, and the isolation module outputs the base station signal to the antenna and absorbs power reflected by the antenna. The power amplification circuit includes a power detection module, and the input power detection unit generates an input power detection signal based on a base station signal. The forward power detection unit generates a forward power detection signal based on the amplified base station signal, and the reverse power detection unit generates a reverse power detection signal based on the isolated base station signal. And the control module adjusts the output power of the power amplification circuit based on the input power detection signal, the forward power detection signal and the reverse power detection signal.

Description

Technical Field

[0001] The utility model relates to the technical field of circuits, and particularly relates to a high-efficiency power amplification circuit and a corresponding circuit system. Background Art

[0002] In modern society, power amplification circuits are mainly applied in the field of wireless communication. A base station can output radio frequency signals, and the power amplification circuit can perform power amplification operations on the radio frequency signals, thereby effectively reducing the transmission power consumption of the radio frequency signals during the transmission process. However, the existing power amplification circuits have the technical problem of low efficiency.

[0003] Therefore, it is necessary to provide a high-efficiency power amplification circuit and a corresponding circuit system to solve the above technical problems. Summary of the Utility Model

[0004] The utility model provides a high-efficiency power amplification circuit and a corresponding circuit system, effectively solving the technical problem of low efficiency of the existing power amplification circuits.

[0005] A high-efficiency power amplification circuit for base station signal transmission includes:

[0006] A control module for outputting a control voltage, an adjustment voltage, and a gate bias voltage;

[0007] A digital control attenuation module connected to the control module, which receives the base station signal and is used to adjust the gain of the base station signal based on the adjustment voltage;

[0008] An automatic level control module connected to the control module and the digital control attenuation module, which is used to adjust the power of the base station signal based on the control voltage;

[0009] A power amplification module connected to the control module and the automatic level control module, which is used to perform power amplification operations on the base station signal based on the gate bias voltage;

[0010] An isolation module connected to the power amplification module, which is used to output the base station signal to the antenna and absorb the power reflected by the antenna;

[0011] The antenna is used to output the base station signal;

[0012] The power detection module includes an input power detection unit, a forward power detection unit, and a reverse power detection unit. One end of the input power detection unit is connected to the digital control attenuation module, and the other end of the input power detection unit is connected to the control module. The input power detection unit is used to generate the input power detection signal based on the base station signal. One end of the forward power detection unit is connected to the power amplification module, and the other end of the forward power detection unit is connected to the control module. The forward power detection unit is used to generate the forward power detection signal based on the amplified base station signal. One end of the reverse power detection unit is connected to the isolation module, and the other end of the reverse power detection unit is connected to the control module. The reverse power detection unit is used to generate the reverse power detection signal based on the isolated base station signal.

[0013] Wherein, the control module is used to adjust the output power of the power amplification circuit based on the input power detection signal, the forward power detection signal, and the reverse power detection signal.

[0014] Further, the control module further includes a temperature compensation unit. The temperature compensation unit generates an ambient temperature signal based on the ambient temperature of the circuit, and the control module adjusts the control voltage, the regulation voltage, and the gate bias voltage based on the ambient temperature signal.

[0015] Further, the digital control attenuation module includes a digital attenuator chip. The digital attenuation chip is used to adjust the gain of the base station signal based on the regulation voltage. The model of the digital attenuator chip is HMC472LP4E. The digital attenuator chip includes an RF1 pin, an RF2 pin, and a regulation voltage input pin. The regulation voltage input pin is connected to the control module for inputting the regulation voltage. The RF1 pin is used to receive the base station signal, and the RF2 pin is used to output the base station signal with adjusted gain.

[0016] Further, the automatic level control module includes two varactor diodes. The two varactor diodes are connected in series to form a varactor diode group. The varactor diode group is used to adjust the power of the base station signal based on the control voltage. The control end of the varactor diode group is connected to the control module for inputting the control voltage. The input end of the varactor diode group is connected to the RF2 pin, and the output end of the varactor diode group is used to output the base station signal with adjusted power.

[0017] Further, the power amplification module includes an amplification chip, which is used to amplify the power of the base station signal based on the gate bias voltage. The model number of the amplification chip is B11 G3338N80D. The amplification chip includes an amplification input pin, an amplification output pin, and a bias voltage input pin. The bias voltage input pin is used to input the bias voltage. The amplification input pin is connected to the output end of the varactor diode group, and the amplification output pin is used to output the amplified base station signal.

[0018] Further, the control module includes a control chip. The model number of the control chip is C8051 F340. The control chip includes an adjustment voltage output pin, a control voltage output pin, and a bias voltage output pin. The adjustment voltage output pin is used to output the adjustment voltage. The adjustment voltage output pin is connected to the adjustment voltage input pin. The control voltage output pin is used to output the control voltage. The control voltage output pin is connected to the control end of the varactor diode group. The bias voltage output pin is used to output the gate bias voltage. The bias voltage output pin is connected to the bias voltage input pin.

[0019] Further, the amplification module further includes a first bridge. The amplification input pin includes a first amplification input pin and a second amplification input pin. One end of the first bridge is connected to the output end of the varactor diode group, and the other end of the first bridge is connected to the first amplification input pin and the second amplification input pin. The first bridge is used to perform a power distribution operation on the base station signal.

[0020] Further, the amplification module further includes a second bridge. The amplification output pin includes a first amplification output pin and a second amplification output pin. The second bridge is connected to the first amplification output pin and the second amplification output pin. The second bridge is used to perform a power combining operation on the base station signal.

[0021] Further, the input power detection unit includes an input power detection chip. The model number of the input power detection chip is HMC1010LP4E. The input power detection chip includes a first input pin and a first output pin. The control chip includes a P2.3 pin. The first input pin is connected to the RF1 pin, and the first output pin is connected to the P2.3 pin. The first input pin is used to input the base station signal. The input power detection chip is used to generate the input power detection signal based on the base station signal. The first output pin is used to output the input power detection signal;

[0022] The forward power detection unit includes a forward power detection chip, the model of the forward power detection chip is HMC1010LP4E, the forward power detection chip includes a second input pin and a second output pin, the control chip includes a P2.4 pin, the second input pin is connected to the second bridge, the second output pin is connected to the P2.4 pin, the second input pin is used to input the amplified base station signal, the power detection chip is used to generate the forward power detection signal based on the amplified base station signal, and the second output pin is used to output the forward power detection signal;

[0023] The reverse power detection unit includes a reverse power detection chip, the model of the reverse power detection chip is HMC1010LP4E, the reverse power detection chip includes a third input pin and a third output pin, the control chip includes a P2.5 pin, the third input pin is connected to the isolation module, the third output pin is connected to the P2.5 pin, the third input pin is used to input the isolated base station signal, the reverse power detection chip is used to generate the reverse power detection signal based on the isolated base station signal, and the third output pin is used to output the reverse power detection signal;

[0024] The control chip is used to adjust the output power of the power amplifier circuit based on the input power detection signal, the forward power detection signal, and the reverse power detection signal.

[0025] A circuit system includes the high-efficiency power amplifier circuit described in any one of the above.

[0026] Compared with the prior art, the beneficial effects of the present utility model are as follows: The present utility model provides a high-efficiency power amplifier circuit, and the power amplifier circuit is provided with a control module. The digital control attenuation module can adjust the gain of the base station signal based on the adjustment voltage, the automatic level control module can adjust the power of the base station signal based on the control voltage, and the power amplifier module can perform a power amplification operation on the base station signal based on the gate bias voltage. Based on the input power detection signal, the forward power detection signal, and the reverse power detection signal, the control chip can adjust the control voltage, the adjustment voltage, and the gate bias voltage, and further the control chip can adjust the output power of the power amplifier circuit. Therefore, even if the radio frequency signal fluctuates during transmission, under the adjustment of the control chip, the power amplifier circuit can still stably output a high-power radio frequency signal. Thus, compared with the traditional power amplifier circuit, the efficiency of this power amplifier circuit is higher. Moreover, the drain efficiency of this power amplifier circuit can reach more than 20%, which is twice as high as that of the pure back-off power amplifier of the traditional power amplifier circuit. This power amplifier circuit can effectively solve the technical problem of the low efficiency of the existing power amplifier circuit. Description of the Drawings

[0027] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following briefly introduces the drawings required to be used in the embodiments. The drawings in the following description are only the corresponding drawings of some embodiments of the present invention.

[0028] Figure 1 It is a block diagram of an embodiment of a high-efficiency power amplifier circuit of the present invention.

[0029] Figure 2 It is a circuit diagram of a digital control attenuation module of an embodiment of a high-efficiency power amplifier circuit of the present invention.

[0030] Figure 3 It is a circuit diagram of an automatic level control module of an embodiment of a high-efficiency power amplifier circuit of the present invention.

[0031] Figure 4 It is a circuit diagram of a power amplifier module of an embodiment of a high-efficiency power amplifier circuit of the present invention.

[0032] Figure 5 It is a circuit diagram of a control module of an embodiment of a high-efficiency power amplifier circuit of the present invention.

[0033] Figure 6 It is a circuit diagram of an input power detection unit of an embodiment of a high-efficiency power amplifier circuit of the present invention.

[0034] Figure 7 It is a circuit diagram of a forward power detection unit of an embodiment of a high-efficiency power amplifier circuit of the present invention.

[0035] Figure 8 It is a circuit diagram of a reverse power detection unit of an embodiment of a high-efficiency power amplifier circuit of the present invention.

[0036] In the figure, 10, power amplifier circuit; 11, control module; 12, digital control attenuation module; 13, automatic level control module; 131, varactor diode group; 132, input end of the varactor diode group; 133, output end of the varactor diode group; 134, control end of the varactor diode group; 14, power amplifier module; 15, isolation module; 16, power detection module; 161, input power detection unit; 1611, first input pin; 1612, first output pin; 162, forward power detection unit; 1621, second input pin; 1622, second output pin; 163, reverse power detection unit; 1631, third input pin; 1632, third output pin; 17, antenna. Detailed implementation manners

[0037] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative efforts belong to the scope of protection of the present invention.

[0038] The directional terms mentioned in the present invention, such as "up", "down", "front", "rear", "left", "right", "inside", "outside", "side", "top", and "bottom", etc., are only with reference to the orientation of the accompanying drawings. The directional terms used are for explaining and understanding the present invention, rather than for limiting the present invention.

[0039] The terms "first", "second", etc. in the present invention are only for descriptive purposes and cannot be understood as indicating or implying relative importance, nor as a limitation on the order of precedence.

[0040] In the figure, units with similar structures are denoted by the same reference numerals.

[0041] Please refer to Figure 1 , the present invention provides a high-efficiency power amplifier circuit 10. The power amplifier circuit 10 is applied to a circuit system. The power amplifier circuit 10 includes a control module 11, a digital control attenuation module 12, an automatic level control module 13, a power amplifier module 14, an isolation module 15, and a power detection module 16. The control module 11 is used to output a control voltage, an adjustment voltage, and a gate bias voltage. The digital control attenuation module 12 is connected to the control module 11. The digital control attenuation module 12 can receive the base station signal output by the base station, and the digital control attenuation module 12 can adjust the gain of the base station signal based on the adjustment voltage. The automatic level control module 13 is connected to the control module 11 and the digital control attenuation module 12. The automatic level control module 13 can adjust the power of the base station signal based on the control voltage. The power amplifier module 14 is connected to the control module 11 and the automatic level control module 13. The power amplifier module 14 can perform a power amplification operation on the base station signal based on the gate bias voltage. The isolation module 15 is connected to the power amplifier module 14. The isolation module 15 can perform an isolation operation on the base station signal. And, the isolation module 15 can output the base station signal to the antenna 17, and the antenna 17 can output the base station signal. The isolation module 15 can also absorb the power reflected back by the antenna 17, so that the isolation module 15 plays a role in protecting the transistor amplifier of the power amplifier module 14.

[0042] On the basis of Figure 1 , please combine Figure 6 , Figure 7 and Figure 8, the power detection module 16 includes an input power detection unit 161, a forward power detection unit 162, and a reverse power detection unit 163. One end of the input power detection unit 161 is connected to the digital control attenuation module 12, and the other end of the input power detection unit 161 is connected to the control module 11. The input power detection unit 161 can generate an input power detection signal based on the base station signal. One end of the forward power detection unit 162 is connected to the power amplification module 14, and the other end of the forward power detection unit 162 is connected to the control module 11. The forward power detection unit 162 can generate a forward power detection signal based on the amplified base station signal. One end of the reverse power detection unit 163 is connected to the isolation module 15, and the other end of the reverse power detection unit 163 is connected to the control module 11. The reverse power detection unit 163 can generate a reverse power detection signal based on the isolated base station signal. Based on the input power detection signal, the forward power detection signal, and the reverse power detection signal, the control module 11 can adjust the output power of the power amplification circuit 10. The control module 11 further includes a temperature compensation unit, and the temperature compensation unit generates an ambient temperature signal based on the ambient temperature of the circuit. The control module 11 can adjust the control voltage, the regulation voltage, and the gate bias voltage based on the ambient temperature signal, and further adjust the output power of the power amplification circuit 10. Since the control module 11 is provided with a temperature compensation unit, at different temperatures, the control module 11 can control the attenuation amount of the base station signal, so that the gain of the base station signal is constant.

[0043] Please refer to Figures 2 to 8 , the following is a detailed description of the specific structure of the power amplification circuit 10:

[0044] Please refer to Figure 2 , the digital control attenuation module 12 includes a digital attenuator chip U17. The digital attenuation chip U17 is used to adjust the gain of the base station signal based on the regulation voltage. The model of the digital attenuator chip U17 is HMC472LP4E. The digital attenuator chip includes an RF1 pin, an RF2 pin, and a regulation voltage input pin. The regulation voltage input pin is connected to the control module 11 and is used to input the regulation voltage. The RF1 pin is used to receive the base station signal, and the RF2 pin is used to output the base station signal with adjusted gain. The digital attenuator chip of HMC472LP4 is a 6-bit digital attenuator chip, and the power attenuation amount of this digital attenuator chip is adjustable between 0.5 dB and 31.5 dB. Among them, the regulation voltage input pin includes a regulation voltage input pin V1, a regulation voltage input pin V2, a regulation voltage input pin V3, a regulation voltage input pin V4, a regulation voltage input pin V5, and a regulation voltage input pin V6. This digital attenuator chip can achieve different power attenuation amounts. Moreover, the digital control attenuation module 12 can be used to adjust the gain magnitude of the power amplification circuit 10, so that the power amplification circuit 10 can be applied in different scenarios.

[0045] Please refer to Figure 3 Figure 3 , the automatic level control module 13 includes two varactor diodes, and the model of the varactor diode is HSMP-3814. The two varactor diodes are respectively varactor diode D3 and varactor diode D4, and the two varactor diodes are connected in series to form a varactor diode group 131. The varactor diode group 131 can adjust the power of the base station signal based on the control voltage. The control end 134 of the varactor diode group is connected to the control module 11. The control end 134 of the varactor diode group is used to input the control voltage. The input end 132 of the varactor diode group is connected to the RF2 pin, and the output end 133 of the varactor diode group is used to output the base station signal with adjusted power. After the voltage changes, the capacitance characteristic of the varactor diode group 131 also changes, so that the attenuation amount of the base station signal can be changed. The control module 11 can output control voltages with different voltage values to the automatic level control module 13, so that the attenuation amount of the automatic level control module 13 changes, thereby realizing the adjustment of the output power of the base station signal. The automatic level control module 13 can realize the automatic level control of the power amplifier circuit 10, so that the amplifier chip AMP1 will not be damaged due to the sudden increase of the input power. The setting of the automatic level control module 13 plays a role in protecting the amplifier chip.

[0046] Please refer to Figure 4 Figure 4 , the power amplifier module 14 includes an amplifier chip AMP1. The amplifier chip AMP1 is used to amplify the power of the base station signal based on the gate bias voltage. The model of the amplifier chip AMP1 is B11 G3338N80D. The amplifier chip AMP1 is a transistor amplifier. The amplifier chip includes an amplifier input pin, an amplifier output pin, and a bias voltage input pin. Among them, the bias voltage input pin includes a bias voltage input pin Vgsp and a bias voltage input pin Vgsc. The bias voltage input pin RFin_a is used to input the bias voltage. The amplifier input pin is connected to the output end 133 of the varactor diode group, and the amplifier output pin RFin_b is used to output the amplified base station signal.

[0047] Please refer to Figure 4, the power amplification module 14 further includes a first bridge U3, and the amplified input pins include a first amplified input pin RFin_a and a second amplified input pin RFin_b. One end of the first bridge U3 is connected to the output end 133 of the varactor diode group, and the other end of the first bridge U3 is connected to the first amplified input pin RFin_a and the second amplified input pin RFin_b. The first bridge U3 is used to perform a power distribution operation on the base station signal. The amplification module further includes a second bridge U2, and the amplified output pins include a first amplified output pin RFout_a and a second amplified output pin RFout_b. The second bridge U2 is connected to the first amplified output pin RFout_a and the second amplified output pin RFout_b. The second bridge U2 is used to perform a power combining operation on the base station signal.

[0048] Please refer to Figure 5 , the control module 11 provides a gate bias voltage for the amplification chip AMP1, which can be used to set the static operating point of the amplification chip AMP1. The base station signal undergoes power distribution through the first bridge U3. Subsequently, the amplification chip AMP1 can perform a power amplification operation on the base station signal. Then, the base station signal undergoes power combination through the second bridge U2. The amplification chip AMP1 inputs a low-power base station signal. The amplification chip AMP1 can be used to amplify the power of the base station signal, and the amplification chip AMP1 can output a high-power base station signal, so that the base station signal can achieve long-distance transmission and coverage.

[0049] Please refer to Figure 1, the control module 11 includes a control chip U1, and the model of the control chip U1 is C8051 F340. The control chip U1 includes an adjustment voltage output pin, a control voltage output pin, and a bias voltage output pin. The adjustment voltage output pins include adjustment voltage output pin P4.2, adjustment voltage output pin P4.3, adjustment voltage output pin P4.4, adjustment voltage output pin P4.5, adjustment voltage output pin P4.6, and adjustment voltage output pin P4.7. The bias voltage output pins include bias voltage output pin P2.0 and bias voltage output pin P2.1. The adjustment voltage output pins are used to output adjustment voltages. The adjustment voltage output pin P4.2 is connected to the adjustment voltage input pin V1. The adjustment voltage output pin P4.3 is connected to the adjustment voltage input pin V2. The adjustment voltage output pin P4.4 is connected to the adjustment voltage input pin V3. The adjustment voltage output pin P4.5 is connected to the adjustment voltage input pin V4. The adjustment voltage output pin P4.6 is connected to the adjustment voltage input pin V5. The adjustment voltage output pin P4.7 is connected to the adjustment voltage input pin V6. The control voltage output pin P2.2 is used to output a control voltage, and the control voltage output pin P2.2 is connected to the control end 134 of the varactor diode group. The bias voltage output pins are used to output gate bias voltages. The bias voltage output pin P2.0 is connected to the bias voltage input pin Vgsc, and the bias voltage output pin P2.1 is connected to the bias voltage input pin Vgsp.

[0050] Please refer to Figure 5 and Figure 6 , the input power detection unit 161 includes an input power detection chip U31, and the model of the input power detection chip U31 is HMC1010LP4E. The input power detection chip U31 includes a first input pin 1611 and a first output pin 1612. The control chip U1 includes a P2.3 pin. The first input pin 1611 is connected to the RF1 pin, and the first output pin 1612 is connected to the P2.3 pin. The first input pin 1611 is used to input a base station signal. The input power detection chip U31 can generate an input power detection signal based on the base station signal, and the first output pin 1612 is used to output the input power detection signal.

[0051] Please refer to Figure 5 and Figure 7, the forward power detection unit 162 includes a forward power detection chip U32, and the model of the forward power detection chip U32 is HMC1010LP4E. The forward power detection chip U32 includes a second input pin 1621 and a second output pin 1622, and the control chip U1 includes a P2.4 pin. The second input pin 1621 is connected to the second bridge, and the second output pin 1622 is connected to the P2.4 pin. The second input pin 1621 is used to input the amplified base station signal, the power detection chip is used to generate a forward power detection signal based on the amplified base station signal, and the second output pin 1622 is used to output the forward power detection signal.

[0052] Please refer to Figure 5 and Figure 8 , the reverse power detection unit 163 includes a reverse power detection chip U33, and the model of the reverse power detection chip U33 is HMC1010LP4E. The reverse power detection chip U33 includes a third input pin 1631 and a third output pin 1632, and the control chip U1 includes a P2.5 pin. The third input pin 1631 is connected to the isolation module 15, and the third output pin 1632 is connected to the P2.5 pin. The third input pin 1631 is used to input the isolated base station signal, the reverse power detection chip U33 is used to generate a reverse power detection signal based on the isolated base station signal, and the third output pin 1632 is used to output the reverse power detection signal.

[0053] Please refer to Figure 5 , the control unit mainly consists of a control chip U1, a storage chip U5, and a communication interface chip U4. The model of the storage chip U4 is 24LC128, and the model of the communication interface chip U5 is MAX485. The control chip U1 provides a gate bias voltage for the amplification module, the control chip U1 provides an adjustment voltage for the digital control attenuation module 12, and the control chip U1 provides a control voltage for the automatic level control module 13. The input power detection provides the input power detection signal to the control module 11, the forward power detection unit 162 provides the forward power detection signal to the control module 11, and the reverse power detection unit 163 provides the reverse power detection signal to the control module 11. Based on the input power detection signal, the forward power detection signal, and the reverse power detection signal, the control chip U1 can adjust the control voltage, the adjustment voltage, and the gate bias voltage, and further the control chip U1 can adjust the output power of the power amplifier circuit 10. The control module 11 can be connected to devices such as a host or a computer through the communication interface chip U5, so that devices such as a host or a computer can monitor the operating state of the entire power amplifier circuit 10 in real time.

[0054] The working principle of the present utility model is as follows: When the power amplifier circuit 10 operates, the control module 11 outputs a control voltage, an adjustment voltage, and a gate bias voltage. Meanwhile, the digital control attenuation module 12 receives the base station signal and is used to adjust the gain of the base station signal based on the adjustment voltage. Then, the automatic level control module 13 receives the base station signal with adjusted gain, and the automatic level control module 13 adjusts the power of the base station signal based on the control voltage. Next, the power amplifier module 14 receives the base station signal with adjusted power, and the automatic level control module 13 can perform a power amplification operation on the base station signal based on the gate bias voltage. The isolation module 15 can receive the base station signal with amplified power, and the isolation module 15 can perform an isolation operation on the base station signal. Subsequently, the isolation module 15 can output the base station signal.

[0055] Moreover, the power detection module 16 includes an input power detection unit 161, a forward power detection unit 162, and a reverse power detection unit 163. The input power detection unit 161 can generate an input power detection signal based on the base station signal, the forward power detection unit 162 can generate a forward power detection signal based on the amplified base station signal, and the reverse power detection unit 163 can generate a reverse power detection signal based on the isolated base station signal. Based on the input power detection signal, the forward power detection signal, and the reverse power detection signal, the control module 11 can adjust the control voltage, the adjustment voltage, and the gate bias voltage, and further the control module 11 can adjust the output power of the power amplifier circuit 10.

[0056] The present utility model provides a high-efficiency power amplifier circuit, and the power amplifier circuit is provided with a control module. The digital control attenuation module can adjust the gain of the base station signal based on the adjustment voltage, the automatic level control module can adjust the power of the base station signal based on the control voltage, and the power amplifier module can perform a power amplification operation on the base station signal based on the gate bias voltage. Based on the input power detection signal, the forward power detection signal, and the reverse power detection signal, the control chip can adjust the control voltage, the adjustment voltage, and the gate bias voltage, and further the control chip can adjust the output power of the power amplifier circuit. Therefore, even if the radio frequency signal fluctuates during transmission, under the adjustment of the control chip, the power amplifier circuit can still stably output a high-power radio frequency signal. Thus, compared with the traditional power amplifier circuit, the power amplifier circuit has a higher efficiency. And, the drain efficiency of the power amplifier circuit can reach more than 20%, which is twice as high as that of the pure back-off power amplifier of the traditional power amplifier circuit. The power amplifier circuit can effectively solve the technical problem of the low efficiency of the existing power amplifier circuit.

[0057] Moreover, the integration level of the power amplifier circuit is relatively high. The internal setting of the power amplifier circuit in the product is beneficial to reducing the size of the product, so that the volume of the product can be reduced by 50% compared with that of similar products. And there is only one power transistor inside the amplification module, which can effectively avoid the problem of mutual interference between multiple transistors.

[0058] In summary, although the present utility model has been disclosed above with preferred embodiments, the above preferred embodiments are not intended to limit the present utility model. Those of ordinary skill in the art can make various changes and modifications without departing from the spirit and scope of the present utility model. Therefore, the protection scope of the present utility model shall be subject to the scope defined by the claims.

Claims

1. A high-efficiency power amplifier circuit, characterized in that, For base station signal transmission, it includes a control module for outputting a control voltage, an adjustment voltage, and a gate bias voltage; a numerically controlled attenuation module connected to the control module, which receives the base station signal and is used to adjust the gain of the base station signal based on the adjustment voltage; an automatic level control module connected to the control module and the numerically controlled attenuation module, which is used to adjust the power of the base station signal based on the control voltage; a power amplification module connected to the control module and the automatic level control module, which is used to perform a power amplification operation on the base station signal based on the gate bias voltage; an isolation module connected to the power amplification module, which is used to output the base station signal to the antenna and absorb the power reflected back by the antenna; the antenna for outputting the base station signal; a power detection module, including an input power detection unit, a forward power detection unit, and a reverse power detection unit. One end of the input power detection unit is connected to the numerically controlled attenuation module, and the other end of the input power detection unit is connected to the control module. The input power detection unit is used to generate an input power detection signal based on the base station signal; one end of the forward power detection unit is connected to the power amplification module, and the other end of the forward power detection unit is connected to the control module. The forward power detection unit is used to generate a forward power detection signal based on the amplified base station signal; one end of the reverse power detection unit is connected to the isolation module, and the other end of the reverse power detection unit is connected to the control module. The reverse power detection unit is used to generate a reverse power detection signal based on the isolated base station signal; wherein, the control module is used to adjust the output power of the power amplification circuit based on the input power detection signal, the forward power detection signal, and the reverse power detection signal.

2. The high-efficiency power amplifier circuit according to claim 1, wherein The control module further includes a temperature compensation unit. The temperature compensation unit generates an ambient temperature signal based on the ambient temperature of the circuit, and the control module adjusts the control voltage, the adjustment voltage, and the gate bias voltage based on the ambient temperature signal.

3. The high-efficiency power amplifier circuit according to claim 1, wherein, The numerically controlled attenuation module includes a digital attenuator chip. The digital attenuator chip is used to adjust the gain of the base station signal based on the adjustment voltage. The model of the digital attenuator chip is HMC472LP4E. The digital attenuator chip includes an RF1 pin, an RF2 pin, and an adjustment voltage input pin. The adjustment voltage input pin is connected to the control module for inputting the adjustment voltage. The RF1 pin is used to receive the base station signal, and the RF2 pin is used to output the base station signal with adjusted gain.

4. The high-efficiency power amplifier circuit according to claim 3, wherein The automatic level control module includes two varactor diodes. The two varactor diodes are connected in series to form a varactor diode group. The varactor diode group is used to adjust the power of the base station signal based on the control voltage. The control end of the varactor diode group is connected to the control module for inputting the control voltage. The input end of the varactor diode group is connected to the RF2 pin, and the output end of the varactor diode group is used to output the base station signal with adjusted power.

5. The high-efficiency power amplifier circuit according to claim 4, wherein The power amplification module includes an amplification chip. The amplification chip is used to perform an amplification operation on the power of the base station signal based on the gate bias voltage. The model of the amplification chip is B11 G3338N80D. The amplification chip includes an amplification input pin, an amplification output pin, and a bias voltage input pin. The bias voltage input pin is used to input the bias voltage. The amplification input pin is connected to the output end of the varactor diode group, and the amplification output pin is used to output the amplified base station signal.

6. The high-efficiency power amplifier circuit according to claim 5, characterized in that, The control module includes a control chip. The model of the control chip is C8051 F340. The control chip includes an adjustment voltage output pin, a control voltage output pin, and a bias voltage output pin. The adjustment voltage output pin is used to output the adjustment voltage. The adjustment voltage output pin is connected to the adjustment voltage input pin. The control voltage output pin is used to output the control voltage. The control voltage output pin is connected to the control end of the varactor diode group. The bias voltage output pin is used to output the gate bias voltage. The bias voltage output pin is connected to the bias voltage input pin.

7. The high-efficiency power amplifier circuit according to claim 5, wherein The amplification module further includes a first bridge. The amplification input pin includes a first amplification input pin and a second amplification input pin. One end of the first bridge is connected to the output end of the varactor diode group, and the other end of the first bridge is connected to the first amplification input pin and the second amplification input pin. The first bridge is used to perform a power distribution operation on the base station signal.

8. The high-efficiency power amplifier circuit according to claim 6, characterized in that, The amplification module further includes a second bridge. The amplification output pin includes a first amplification output pin and a second amplification output pin. The second bridge is connected to the first amplification output pin and the second amplification output pin. The second bridge is used to perform a power synthesis operation on the base station signal.

9. The high-efficiency power amplifier circuit according to claim 8, wherein The input power detection unit includes an input power detection chip. The model of the input power detection chip is HMC1010LP4E. The input power detection chip includes a first input pin and a first output pin. The control chip includes a P2.3 pin. The first input pin is connected to the RF1 pin. The first output pin is connected to the P2.3 pin. The first input pin is used to input the base station signal. The input power detection chip is used to generate the input power detection signal based on the base station signal. The first output pin is used to output the input power detection signal; The forward power detection unit includes a forward power detection chip, the model of the forward power detection chip is HMC1010LP4E, the forward power detection chip includes a second input pin and a second output pin, the control chip includes a P2.4 pin, the second input pin is connected to the second bridge, the second output pin is connected to the P2.4 pin, the second input pin is used to input the amplified base station signal, the power detection chip is used to generate the forward power detection signal based on the amplified base station signal, and the second output pin is used to output the forward power detection signal; The reverse power detection unit includes a reverse power detection chip, the model of the reverse power detection chip is HMC1010LP4E, the reverse power detection chip includes a third input pin and a third output pin, the control chip includes a P2.5 pin, the third input pin is connected to the isolation module, the third output pin is connected to the P2.5 pin, the third input pin is used to input the isolated base station signal, the reverse power detection chip is used to generate the reverse power detection signal based on the isolated base station signal, and the third output pin is used to output the reverse power detection signal; The control chip is used to adjust the output power of the power amplifier circuit based on the input power detection signal, the forward power detection signal, and the reverse power detection signal.

10. A circuit system, characterized in that, It includes the high-efficiency power amplifier circuit according to any one of claims 1-9.

Images