Semiconductor glass passivation electrophoresis device and system

Abstract

The utility model provides a semiconductor glass passivation electrophoresis device and system, and relates to the technical field of semiconductors. The device comprises a loading rack, an electrode plate, an inner tank, an outer tank and a water pump. The chip mounting rack and the electrode plate are arranged in the inner groove; and the water pump is arranged in the outer groove. The wafer is fixed above the liquid level of the glass powder solution in the inner groove through the wafer loading frame, and if the liquid level of the glass powder solution in the inner groove is too low, the glass powder solution in the outer groove is pumped back to the inner groove through the water pump. If the liquid level of the glass powder solution in the inner tank is too high, the glass powder solution in the inner tank overflows to the outer tank through the water outlet of the inner tank. The glass powder solution circulates in the inner groove and the outer groove, so that the problem of glass powder deposition of the glass powder solution in the long-time operation process is effectively solved, one surface of the wafer is always in contact with the glass powder solution, and the other surface of the wafer is exposed in the air. The single-sided electrophoresis of the wafer is realized, the loss of the glass powder is greatly reduced, and the utilization rate of the glass powder is improved.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology. Specifically, it relates to a semiconductor glass passivation electrophoresis device and system. Background Art

[0002] Fast recovery diodes can adopt mesa process or planar process. Among them, the mesa structure has many advantages and can improve the breakdown voltage performance of the device. However, adopting the mesa process means that there are grooves on the chip surface. In order to protect the chip, a glass passivation process needs to be carried out on the chip to form a passivation protection film.

[0003] Current electrophoresis glass passivation methods immerse the entire wafer in the electrophoresis solution, but this method will cause the back side of the wafer to also adsorb ineffective glass powder, resulting in unstable electrophoresis process, high glass powder loss, and low utilization rate of glass powder during the production process. In addition, after the manufacturing process, the back side and side of the wafer that do not require glass film protection are prone to glass residue, which affects the appearance. The product quality is not as good as that of planar products, and the fragment rate of subsequent processes is increased.

[0004] In summary, how to reduce the loss of glass powder during electrophoresis and improve the utilization rate of glass powder is a technical problem that needs to be solved urgently by those skilled in the art. Summary of the Utility Model

[0005] The purpose of this application is to provide a semiconductor glass passivation electrophoresis device and system to reduce the loss of glass powder during electrophoresis and improve the utilization rate of glass powder.

[0006] To achieve the above purpose, the technical solution adopted in this application is as follows:

[0007] On the one hand, this application provides a semiconductor glass passivation electrophoresis device, and the semiconductor glass passivation electrophoresis device includes: a wafer loading rack, an electrode plate, an inner tank, an outer tank, and a water pump;

[0008] The electrode plate and the wafer loading rack are both arranged in the inner tank. The electrode plate is arranged at the bottom of the inner tank, and the wafer loading rack is arranged above the electrode plate. Moreover, the wafer loading rack and the electrode plate are both parallel to the bottom of the inner tank. The wafer loading rack is used to carry the wafer and make the wafer conductive; the wafer loading rack is connected to a power supply with a first polarity, and the electrode plate is connected to a power supply with a second polarity, and the first polarity is opposite to the charged polarity of the glass powder, and the second polarity is the same as the charged polarity of the glass powder;

[0009] The outer groove surrounds the outside of the inner groove, and the bottom of the outer groove is lower than the bottom of the inner groove; the water pump is arranged in the outer groove, and the water pump is communicated with the inner groove water inlet at the bottom of the inner groove. The water pump is used to pump the glass powder solution in the outer groove back to the inner groove. The inner groove water outlet is arranged on the side wall of the inner groove, and the inner groove water outlet is close to the wafer mounting rack; the inner groove water outlet, the water pump and the wafer mounting rack ensure that one side of the wafer is always in contact with the glass powder solution, and the other side of the wafer is exposed to the air.

[0010] Further, the wafer mounting rack includes a bearing body and a plurality of supporting points. The bearing body is connected to the plurality of supporting points, and the plurality of supporting points are used to support the wafer.

[0011] Further, the wafer mounting rack further includes a first plug. One end of the first plug is connected to the bearing body, and the other end of the first plug is connected to the power supply of the first polarity.

[0012] Further, the plurality of supporting points are all made of conductive materials. A wire is arranged inside the wafer mounting rack. One end of the wire is connected to the power supply of the first polarity through the first plug, and the other end of the wire is respectively connected to the plurality of supporting points to make the wafer conductive.

[0013] Further, the bearing body is made of conductive materials, and a layer of Teflon coating is applied on the surface of the bearing body.

[0014] Further, the electrode plate includes a second plug and an electrode plate body. One end of the second plug is connected to the electrode plate body, and the other end of the second plug is connected to the power supply of the second polarity.

[0015] Further, the electrode plate body is made of conductive materials. The electrode plate body includes an electrophoresis area and a non-electrophoresis area; a layer of Teflon coating is applied on the surface of the non-electrophoresis area. The electrophoresis area is the same size as the wafer. When the wafer mounting rack bears the wafer, the electrophoresis area is arranged opposite to the wafer.

[0016] Further, the top of the outer groove is higher than the inner groove water outlet.

[0017] Further, the semiconductor glass passivation electrophoresis device further includes a support column. The support column is arranged at the bottom of the inner groove, and the support column is used to support the electrode plate.

[0018] On the other hand, the present application also provides a semiconductor glass passivation electrophoresis system. The semiconductor glass passivation electrophoresis system includes the semiconductor glass passivation electrophoresis device according to any one of the foregoing embodiments.

[0019] Compared with the prior art, the present application has the following beneficial effects:

[0020] The present application provides a semiconductor glass passivation electrophoresis device and system. The wafer is fixed above the liquid level of the glass powder solution in the inner tank through a wafer loading rack. If the liquid level of the glass powder solution in the inner tank is too low, the glass powder solution in the outer tank is pumped back into the inner tank through a water pump. If the liquid level of the glass powder solution in the inner tank is too high, the glass powder solution in the inner tank overflows into the outer tank through the outlet of the inner tank. By circulating the glass powder solution between the two tanks, not only the problem of glass powder deposition during long-term operation is effectively solved, but also one side of the wafer (i.e., the electrophoresis surface to be operated) is always in contact with the glass powder solution, and the other side of the wafer is exposed to the air. Unidirectional electrophoresis of the wafer is achieved, significantly reducing the loss of glass powder and the difficulty of removing useless glass powder on the back, improving the utilization rate of glass powder and reducing costs.

[0021] To make the above objects, features, and advantages of the present application more obvious and understandable, the following specifically enumerates preferred embodiments and, in conjunction with the accompanying drawings, provides a detailed description as follows. Description of the Drawings

[0022] To make the objects, technical solutions, and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are some, but not all, of the embodiments of the present application. Usually, the components of the embodiments of the present application described and illustrated herein can be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of the present application provided in the drawings is not intended to limit the scope of the present application claimed, but merely represents selected embodiments of the present application. Based on the embodiments of the present application, all other embodiments obtained by those of ordinary skill in the art without creative efforts fall within the scope of protection of the present application.

[0023] Figure 1 One of the structural schematic diagrams of a semiconductor glass passivation electrophoresis device provided by the present application;

[0024] Figure 2 The structural schematic diagram of a wafer loading rack provided by the present application;

[0025] Figure 3 The structural schematic diagram of an electrode plate provided by the present application;

[0026] Figure 4 Another structural schematic diagram of a semiconductor glass passivation electrophoresis device provided by the present application.

[0027] Reference numerals: 10 - semiconductor glass passivation electrophoresis device; 110 - wafer loading rack; 111 - carrier body; 112 - fulcrum; 113 - first plug; 114 - wire; 120 - electrode plate; 121 - second plug; 122 - electrode plate body; 1221 - electrophoresis area; 1222 - non - electrophoresis area; 130 - inner tank; 131 - inner tank water inlet; 132 - inner tank water outlet; 140 - outer tank; 150 - water pump; 160 - support column. Detailed implementation manners

[0028] The following will clearly and completely describe the technical solutions in the embodiments of the present application with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. The components of the embodiments of the present application described and illustrated in the accompanying drawings here can be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of the present application provided in the drawings is not intended to limit the scope of the present application to be protected, but only represents the selected embodiments of the present application. All other embodiments obtained by those skilled in the art based on the embodiments of the present application without creative efforts belong to the scope of protection of the present application.

[0029] It should be noted that: similar reference numerals and letters represent similar items in the following drawings. Therefore, once an item is defined in one drawing, it does not need to be further defined and explained in subsequent drawings.

[0030] In the description of the present application, it should be noted that relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. The term "connection" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be directly connected, or indirectly connected through an intermediate medium.

[0031] The following will describe in detail some implementation manners of the present application with reference to the accompanying drawings. Without conflict, the following embodiments and the features in the embodiments can be combined with each other.

[0032] As described in the background art, current electrophoresis glass passivation methods all soak the entire wafer in the electrophoresis solution. Under the action of an electric field, the charged glass powder moves directionally towards the surface of the wafer, so as to achieve the function of the glass film protecting the exposed wafer. After electrophoresis, high - temperature sintering is carried out to form a cured passivation protection film.

[0033] However, this method will cause ineffective glass powder to be adsorbed on the back side of the wafer, resulting in unstable electrophoresis process, high glass powder loss, and low utilization rate of glass powder during production. In addition, after the process is completed, there is likely to be glass residue on the back side and sides of the wafer that do not require glass film protection, which affects the appearance. The product quality is not as good as that of flat products, and the fragmentation rate in subsequent processes is increased.

[0034] Therefore, how to reduce the loss of glass powder during electrophoresis and improve the utilization rate of glass powder is a technical problem that needs to be solved urgently by those skilled in the art.

[0035] To solve the above technical problems, please refer to Figure 1 , an embodiment of the present application provides a semiconductor glass passivation electrophoresis device 10. The semiconductor glass passivation electrophoresis device 10 includes: a wafer loading rack 110, an electrode plate 120, an inner tank 130, an outer tank 140, and a water pump 150.

[0036] As an optional implementation manner, the electrode plate 120 and the wafer loading rack 110 are both disposed in the inner tank 130, and the water pump 150 is disposed in the outer tank 140.

[0037] Specifically, the electrode plate 120 is disposed at the bottom of the inner tank 130, the wafer loading rack 110 is disposed above the electrode plate 120, and both the wafer loading rack 110 and the electrode plate 120 are parallel to the bottom of the inner tank 130. Optionally, the wafer loading rack 110 is fixed to the side wall of the inner tank 130. The wafer loading rack 110 is used to carry the wafer and make the wafer energized. The wafer is suspended above the liquid surface of the glass powder solution through the wafer loading rack 110 to ensure that the electrophoresis surface to be processed of the wafer contacts the glass powder solution, and the back side is exposed to the air.

[0038] The wafer loading rack 110 is connected to a power supply of the first polarity, and the electrode plate 120 is connected to a power supply of the second polarity. Moreover, the first polarity is opposite to the charged polarity of the glass powder, and the second polarity is the same as the charged polarity of the glass powder. For example, if the glass powder is negatively charged, the electrode plate 120 is connected to negative electricity, and the wafer loading rack 110 is connected to positive electricity, so that the wafer is also positively charged, and thus an electric field can be formed between the electrode plate 120 and the wafer. Since the glass powder is negatively charged, the glass powder located between the electrode plate 120 and the wafer will adhere to the electrophoresis surface to be processed of the wafer under the action of the electric field, achieving passivation.

[0039] To ensure that the liquid surface of the glass powder solution in the inner tank 130 always contacts one side of the wafer, in the embodiment of the present application, the outer tank 140 surrounds the outside of the inner tank 130, and the bottom of the outer tank 140 is lower than the bottom of the inner tank 130. The water pump 150 is disposed at the bottom of the outer tank 140, and the water pump 150 is connected to the inner tank water inlet 131 at the bottom of the inner tank 130. The water pump 150 is used to pump the glass powder solution in the outer tank 140 back to the inner tank 130. The inner tank water outlet 132 is disposed on the side wall of the inner tank 130, and the inner tank water outlet 132 is close to the wafer loading rack 110.

[0040] Based on the above design, the wafer is fixed above the liquid level of the glass powder solution in the inner tank 130 by the wafer loading rack 110. If the liquid level of the glass powder solution in the inner tank 130 is too low, the glass powder solution in the outer tank 140 is pumped back into the inner tank 130 by the water pump 150. If the liquid level of the glass powder solution in the inner tank 130 is too high, the glass powder solution in the inner tank 130 overflows into the outer tank 140 through the inner tank water outlet 132. Circulating the glass powder solution in the two inner and outer tanks not only effectively solves the problem of glass powder deposition during long-term operation of the glass powder solution, but also ensures that one side of the wafer (i.e., the electrophoresis surface to be operated) is always in contact with the glass powder solution, and the other side of the wafer is exposed to the air. Electrophoresis is only performed on one side of the wafer, greatly reducing the loss of glass powder and the difficulty of removing useless glass powder on the back, improving the utilization rate of glass powder and reducing costs.

[0041] Optionally, the top of the outer tank 140 is higher than the inner tank water outlet 132 to ensure that the glass powder solution overflowing from the inner tank 130 all flows into the outer tank 140, reducing the waste of the glass powder solution.

[0042] Optionally, the water outlet rate of the inner tank water outlet 132 is greater than or equal to the water inlet rate of the inner tank water inlet 131, and the liquid level of the glass powder solution in the outer tank 140 is lower than the inner tank water outlet 132.

[0043] For a better understanding of the principle of the wafer loading rack 110 for fixing the wafer and energizing the wafer, please refer to Figure 2 . In the embodiment of the present application, the wafer loading rack 110 includes a bearing body 111 and a plurality of fulcrums 112. Among them, the bearing body 111 is connected to the plurality of fulcrums 112, and the plurality of fulcrums 112 are used to support the wafer.

[0044] As an optional implementation manner, the wafer loading rack 110 further includes a first plug 113. One end of the first plug 113 is connected to the bearing body 111, and the other end of the first plug 113 is connected to a power supply of the first polarity.

[0045] Furthermore, both the bearing body 111 and the plurality of fulcrums 112 are made of conductive materials. A wire 114 is provided inside the wafer loading rack 110. One end of the wire 114 is connected to a power supply of the first polarity through the first plug 113, and the other end of the wire 114 is respectively connected to the plurality of fulcrums 112.

[0046] Through the above design, the wafer loading rack 110 can not only fix the wafer through the plurality of fulcrums 112, but also make the wafer conductive, and the electrification property of the wafer is consistent with that of the wafer loading rack 110.

[0047] In addition, in order to ensure that the glass powder in the electrophoresis solution is only adsorbed on the wafer, in the embodiment of the present application, a layer of Teflon coating is applied on the surface of the carrier body 111 to play an insulating role. This avoids the adsorption of the glass powder to the carrier body 111 under the action of the electric field, thereby reducing the loss of the glass powder solution.

[0048] Please refer to Figure 3 , Figure 3 which shows a schematic structural diagram of an electrode plate 120 provided by an embodiment of the present application. As an alternative embodiment, the electrode plate 120 includes a second plug 121 and an electrode plate main body 122. One end of the second plug 121 is connected to the electrode plate main body 122, and the other end of the second plug 121 is connected to a power supply of the second polarity.

[0049] In order to further reduce the loss of the glass powder, in the embodiment of the present application, the electrode plate 120 includes an electrophoresis area 1221 and a non-electrophoresis area 1222. The electrophoresis area 1221 is the same size as the wafer, and when the wafer holder 110 carries the wafer, the electrophoresis area 1221 is disposed opposite to the wafer. That is, in the present application, the electrophoresis area 1221 can be set to be circular.

[0050] In addition, the entire electrode plate 120 can be made of a metal material, and a layer of Teflon material is sintered on the non-electrophoresis area 1222 to play an insulating role. Ensure that when the electrode plate 120 is placed in the electrophoresis solution, an electric field exists in the area corresponding to the electrophoresis area 1221, and no electric field exists in the area corresponding to the non-electrophoresis area 1222, so that the charged glass powder in the electrophoresis solution will only adhere to the surface of the wafer, reducing the loss of the glass powder.

[0051] To ensure that the electrode plate 120 is parallel to the wafer holder 110, please refer to Figure 4 . As an alternative embodiment, the semiconductor glass passivation electrophoresis device 10 further includes a support column 160. The support column 160 is disposed at the bottom of the inner tank 130, and the support column 160 is used to support the electrode plate 120 to ensure that both the electrode plate 120 and the wafer holder 110 are parallel to the bottom of the inner tank 130.

[0052] Optionally, an embodiment of the present application further provides a semiconductor glass passivation electrophoresis system, which includes the semiconductor glass passivation electrophoresis device 10 described in any one of the foregoing embodiments.

[0053] In summary, the embodiments of the present application provide a semiconductor glass passivation electrophoresis device and system. The wafer is fixed above the liquid level of the glass powder solution in the inner tank through a loading rack. If the liquid level of the glass powder solution in the inner tank is too low, the glass powder solution in the outer tank is pumped back into the inner tank through a water pump. If the liquid level of the glass powder solution in the inner tank is too high, the glass powder solution in the inner tank overflows into the outer tank through the outlet of the inner tank. The circulation of the glass powder solution in the two inner and outer tanks not only effectively solves the problem of glass powder deposition during long-term operation, but also ensures that one side of the wafer is always in contact with the glass powder solution, and the other side of the wafer is exposed to the air. Unidirectional electrophoresis of the wafer is achieved, greatly reducing the loss of glass powder and the difficulty of removing useless glass powder on the back, and improving the utilization rate of glass powder.

[0054] In addition, by sintering a layer of Teflon material on the surfaces of the carrier body and the non-electrophoresis area, it is ensured that there is an electric field only in the area corresponding to the wafer, further reducing the loss of glass powder and improving the utilization rate of glass powder.

[0055] The above are only the preferred embodiments of the present application and are not intended to limit the present application. For those skilled in the art, the present application can have various changes and modifications. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

[0056] For those skilled in the art, it is obvious that the present application is not limited to the details of the above exemplary embodiments, and can be implemented in other specific forms without departing from the spirit or basic characteristics of the present application. Therefore, from any point of view, the embodiments should be regarded as exemplary and non-limiting. The scope of the present application is defined by the appended claims rather than the above description. Therefore, all changes falling within the meaning and scope of the equivalent elements of the claims are intended to be included in the present application. Any reference signs in the claims should not be regarded as limiting the claimed rights.

Claims

1. A semiconductor glass passivation electrophoresis device, characterized in that The semiconductor glass passivation electrophoresis device includes: a wafer loading rack, electrode plates, an inner tank, an outer tank, and a water pump; The electrode plates and the wafer loading rack are both disposed in the inner tank. The electrode plates are disposed at the bottom of the inner tank, and the wafer loading rack is disposed above the electrode plates. Moreover, the wafer loading rack and the electrode plates are both parallel to the bottom of the inner tank. The wafer loading rack is used to carry the wafers and make the wafers conductive. The wafer loading rack is connected to a power supply of a first polarity, and the electrode plates are connected to a power supply of a second polarity. And the first polarity is opposite to the charged polarity of the glass powder, and the second polarity is the same as the charged polarity of the glass powder; The outer tank surrounds the outside of the inner tank, and the bottom of the outer tank is lower than the bottom of the inner tank. The water pump is disposed in the outer tank, and the water pump is connected to a water inlet of the inner tank at the bottom of the inner tank. The water pump is used to pump the glass powder solution in the outer tank back to the inner tank. A water outlet of the inner tank is disposed on the side wall of the inner tank, and the water outlet of the inner tank is close to the wafer loading rack. The water outlet of the inner tank, the water pump, and the wafer loading rack ensure that one side of the wafer is always in contact with the glass powder solution, and the other side of the wafer is exposed to the air.

2. The semiconductor glass passivation electrophoresis device according to claim 1, characterized in that The wafer loading rack includes a loading main body and a plurality of supporting points. The loading main body is connected to the plurality of supporting points, and the plurality of supporting points are used to support the wafers.

3. The semiconductor glass passivation electrophoresis device according to claim 2, wherein The wafer loading rack further includes a first plug. One end of the first plug is connected to the loading main body, and the other end of the first plug is connected to the power supply of the first polarity.

4. The semiconductor glass passivation electrophoresis device according to claim 3, wherein The plurality of supporting points are all made of conductive materials. A wire is disposed inside the wafer loading rack. One end of the wire is connected to the power supply of the first polarity through the first plug, and the other end of the wire is respectively connected to the plurality of supporting points to make the wafers conductive.

5. The semiconductor glass passivation electrophoresis device according to claim 2, characterized in that, The loading main body is made of conductive materials, and a layer of Teflon coating is applied on the surface of the loading main body.

6. The semiconductor glass passivation electrophoresis device according to claim 1, characterized in that, The electrode plates include second plugs and electrode plate bodies. One end of the second plug is connected to the electrode plate body, and the other end of the second plug is connected to the power supply of the second polarity.

7. The semiconductor glass passivation electrophoresis device according to claim 6, wherein, The electrode plate body is made of conductive materials. The electrode plate body includes an electrophoresis area and a non-electrophoresis area. A layer of Teflon coating is applied on the surface of the non-electrophoresis area. The electrophoresis area is the same size as the wafer. When the wafer loading rack carries the wafers, the electrophoresis area is disposed opposite to the wafers.

8. The semiconductor glass passivation electrophoresis device according to claim 1, wherein The top of the outer tank is higher than the water outlet of the inner tank.

9. The semiconductor glass passivation electrophoresis device according to claim 1, wherein The semiconductor glass passivation electrophoresis device further includes support columns. The support columns are disposed at the bottom of the inner tank, and the support columns are used to support the electrode plates.

10. A semiconductor glass passivation electrophoresis system, characterized in that, The semiconductor glass passivation electrophoresis system includes the semiconductor glass passivation electrophoresis device according to any one of claims 1 to 9.

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