Radio frequency power amplifier, radio frequency front-end module and electronic equipment

Abstract

The utility model discloses a radio frequency power amplifier, a radio frequency front-end module and electronic equipment. The radio frequency power amplifier comprises M first transistors, N second transistors, a first capacitor and a second capacitor. Wherein the M first transistors are connected in parallel, and the N second transistors are connected in parallel. The first capacitor comprises a first pole plate and a second pole plate which are spaced; the output ends of the M first transistors are connected to the first polar plate. The second capacitor comprises a third polar plate and a fourth polar plate which are spaced; the output ends of the N second transistors are connected to the third pole plate. The M first transistors and the N second transistors are arranged along a first specified straight line, the extension direction of the first specified straight line is a first direction, and the first capacitor and the second capacitor are arranged along the first direction. As the first capacitor and the second capacitor are respectively realized by laminating at least two polar plates at intervals, compared with a matching capacitor in an SMD (Surface Mount Device) form, the radio frequency power amplifier has the advantage that the hardware cost of the radio frequency front-end module provided with the radio frequency power amplifier can be reduced.

Description

Technical Field

[0001] The present application relates to the field of radio frequency technology, and more specifically, to a radio frequency power amplifier, a radio frequency front-end module, and an electronic device. Background Art

[0002] Currently, radio frequency front-end modules have been widely used in fields such as wireless communication, Internet of Things, and smart home. They can process radio frequency signals (for example, power amplification, modulation and demodulation, etc.) to complete the tasks of receiving and transmitting radio frequency signals.

[0003] In a radio frequency front-end module, a radio frequency power amplifier plays a crucial role, which is used to amplify the power of radio frequency signals. Generally, the radio frequency power amplifier is integrated in a chip. When the radio frequency power amplifier is implemented using a differential architecture, the chip needs to be connected to a balun disposed on a substrate to achieve the effects of "differential-to-single-ended" and impedance matching.

[0004] In addition, in order to better achieve impedance matching, some matching capacitors are usually provided at the output end of the radio frequency power amplifier. In the related art, the matching capacitors are mounted on the substrate in the form of surface-mounted devices (SMD), resulting in an increase in the hardware cost of the radio frequency front-end module. Summary of the Utility Model

[0005] Embodiments of the present application provide a radio frequency power amplifier, a radio frequency front-end module, and an electronic device.

[0006] According to a first aspect of the present application, embodiments of the present application provide a radio frequency power amplifier, which includes M first transistors, N second transistors, a first capacitor, and a second capacitor. Wherein, the M first transistors are connected in parallel to output a first radio frequency signal, and the N second transistors are connected in parallel to output a second radio frequency signal; M is a positive integer greater than 1, and N is a positive integer greater than 1. The first capacitor includes a first electrode plate and a second electrode plate spaced apart from each other; the output ends of the M first transistors are connected to the first electrode plate, and the second electrode plate is used to output the first radio frequency signal. The second capacitor includes a third electrode plate and a fourth electrode plate spaced apart from each other; the output ends of the N second transistors are connected to the third electrode plate, and the fourth electrode plate is used to output the second radio frequency signal. The M first transistors and the N second transistors are both arranged along a first specified straight line, the extending direction of the first specified straight line is a first direction, and the first capacitor and the second capacitor are arranged along the first direction.

[0007] Among them, in some possible embodiments, the M first transistors, the N second transistors, the first capacitor, and the second capacitor are integrated in the chip. The radio frequency power amplifier further includes a first connection member and a second connection member for connecting the chip to the substrate. The first connection member is connected to the second electrode plate, and the first radio frequency signal is output via the first connection member; the second connection member is connected to the fourth electrode plate, and the second radio frequency signal is output via the second connection member.

[0008] Among them, in some possible embodiments, the first connection member and the M first transistors are respectively located on opposite sides of the first capacitor in the second direction, and the second direction intersects the first direction; the second connection member and the N second transistors are respectively located on opposite sides of the second capacitor in the second direction.

[0009] Among them, in some possible embodiments, the second electrode plate has a first side, and the first side is the side of the second electrode plate away from the M first transistors. The first connection member is connected to the middle position of the first side; the fourth electrode plate has a second side, and the second side is the side of the fourth electrode plate away from the N second transistors. The second connection member is connected to the middle position of the second side.

[0010] Among them, in some possible embodiments, the chip has a side edge extending in the first direction. The first connection member is disposed adjacent to the side edge, and the second connection member is disposed adjacent to the side edge.

[0011] Among them, in some possible embodiments, the first connection member and the second connection member are bonding wires; or, the first connection member and the second connection member are bumps.

[0012] Among them, in some possible embodiments, M is equal to N, and the M first transistors and the N second transistors are symmetrically arranged with respect to a second specified straight line. The extending direction of the second specified straight line is the second direction, and the second direction intersects the first direction.

[0013] Among them, in some possible embodiments, the second direction is perpendicular to the first direction.

[0014] Among them, in some possible embodiments, the first capacitor and the second capacitor are symmetrically arranged with respect to the second specified straight line.

[0015] Among them, in some possible embodiments, the first capacitor further includes a fifth electrode plate spaced apart from the first electrode plate and the second electrode plate respectively; the fifth electrode plate is electrically connected to the second electrode plate, and the first electrode plate is located between the second electrode plate and the fifth electrode plate.

[0016] Among them, in some possible embodiments, the second electrode plate, the first electrode plate, and the fifth electrode plate are sequentially disposed on different metal layers along a preset direction. The first capacitor is further provided with a first metal via, and the first metal via is connected between the fifth electrode plate and the second electrode plate. The projection of the first metal via in the preset direction does not coincide with the first electrode plate.

[0017] Among them, in some possible embodiments, the second electrode plate has an adjacent first side and a third side, and the length of the first side is greater than or equal to the length of the third side; the first metal via is disposed adjacent to the first side, and the length direction of the first metal via is the same as the extending direction of the first side.

[0018] Among them, in some possible embodiments, the radio frequency power amplifier further includes a third connector for receiving a supply voltage, and the third connector is connected to a side of the first electrode plate away from the M first transistors.

[0019] Among them, in some possible embodiments, the second electrode plate has an adjacent first side and a third side, and the length of the first side is greater than or equal to the length of the third side; the number of the first metal vias is two, and the two first metal vias are arranged in sequence along the first side, the projection of the third connector in a preset direction is located between the two first metal vias, and the projection of the third connector in the preset direction does not overlap with the two first metal vias.

[0020] Among them, in some possible embodiments, the capacitance value of the first capacitor is greater than or equal to 10 pF; or / and, the signal frequency of the first radio frequency signal is less than or equal to 3 GHz.

[0021] Among them, in some possible embodiments, the first capacitor further includes a fifth electrode plate spaced apart from the first electrode plate and the second electrode plate respectively; the fifth electrode plate is electrically connected to the first electrode plate, and the second electrode plate is located between the first electrode plate and the fifth electrode plate.

[0022] Among them, in some possible embodiments, the first electrode plate, the second electrode plate and the fifth electrode plate are sequentially arranged on different metal layers along a preset direction, the first capacitor is further provided with a second metal via, and the second metal via is connected between the fifth electrode plate and the first electrode plate, and the projection of the second metal via in the preset direction does not coincide with the second electrode plate.

[0023] Among them, in some possible embodiments, the first electrode plate and the second electrode plate are arranged on different metal layers, and the projections of the first electrode plate and the second electrode plate in a preset direction overlap, and the preset direction is a direction perpendicular to the metal layer.

[0024] Among them, in some possible embodiments, the capacitance value of the first capacitor is less than 10 pF; or / and, or the signal frequency of the first radio frequency signal is greater than 3 GHz.

[0025] According to a second aspect of the present application, an embodiment of the present application further provides a radio frequency front-end module, and the radio frequency front-end module includes a substrate, the above-mentioned radio frequency power amplifier and a balun. Among them, the radio frequency power amplifier is disposed on the substrate. The balun is disposed on the substrate, and the balun includes a primary side and a secondary side that are coupled, and the primary side is connected to the radio frequency power amplifier.

[0026] Among them, in some possible embodiments, the primary side of the balun is symmetrically arranged on the substrate with respect to a second specified straight line.

[0027] According to the third aspect of the present application, an embodiment of the present application further provides an electronic device, which includes the above-mentioned radio frequency front-end module.

[0028] The embodiment of the present application provides a radio frequency power amplifier, a radio frequency front-end module and an electronic device. In the radio frequency power amplifier, M first transistors are connected in parallel to output a first radio frequency signal, and N second transistors are connected in parallel to output a second radio frequency signal. For example, the first radio frequency signal and the second radio frequency signal may be a pair of differential signals. That is to say, the M first transistors and the N second transistors in the present application together constitute a differential power amplification circuit.

[0029] The first capacitor includes a first electrode plate and a second electrode plate arranged at intervals. The output ends of the M first transistors are connected to the first electrode plate, and the second electrode plate is used to output the first radio frequency signal. When the radio frequency power amplifier is applied in a radio frequency front-end module provided with a balun, the second electrode plate can be connected to the primary side of the balun. At this time, the first capacitor and the primary side of the balun constitute an LC matching circuit. Since the matching capacitor (that is, the first capacitor) is realized by laminating at least two electrode plates at intervals, compared with the SMD-form matching capacitor, the hardware cost of the radio frequency front-end module can be reduced.

[0030] Similarly, the second capacitor includes a third electrode plate and a fourth electrode plate arranged at intervals. The output ends of the N second transistors are connected to the third electrode plate, and the fourth electrode plate is used to output the second radio frequency signal. When the radio frequency power amplifier is applied in a radio frequency front-end module provided with a balun, the fourth electrode plate can be connected to the primary side of the balun. At this time, the second capacitor and the primary side of the balun constitute an LC matching circuit. Since the matching capacitor (that is, the second capacitor) is realized by laminating at least two electrode plates at intervals, compared with the SMD-form matching capacitor, the hardware cost of the radio frequency front-end module can be reduced.

[0031] Further, in the present application, the M first transistors and the N second transistors are both arranged along a first specified straight line, the extending direction of the first specified straight line is the first direction, and the first capacitor and the second capacitor are arranged along the first direction, which can make the arrangement of the components in the radio frequency power amplifier more compact and reasonable, so as to facilitate the miniaturization design of the radio frequency power amplifier. Description of the Drawings

[0032] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the following drawings are only some embodiments of the present application. For those skilled in the art, without creative efforts, other drawings can also be obtained based on these drawings.

[0033] Figure 1 It is a schematic structural diagram of a radio frequency power amplifier provided by an embodiment of the present application.

[0034] Figure 2 is Figure 1 The corresponding circuit schematic diagram of the radio frequency power amplifier shown.

[0035] Figure 3 is Figure 1 The schematic structural diagram of M first transistors in the radio frequency power amplifier shown.

[0036] Figure 4 is Figure 1 A cross-sectional schematic diagram of a first capacitor in the radio frequency power amplifier shown.

[0037] Figure 5 is Figure 1 Another cross-sectional schematic diagram of a first capacitor in the radio frequency power amplifier shown.

[0038] Figure 6 is Figure 5 The schematic structural diagram of the first capacitor shown.

[0039] Figure 7 is Figure 1 Another cross-sectional schematic diagram of a first capacitor in the radio frequency power amplifier shown.

[0040] Figure 8 is Figure 7 The schematic structural diagram of the first capacitor shown.

[0041] Figure 9 It is a schematic structural diagram of a radio frequency front-end module provided by an embodiment of the present application.

[0042] Figure 10 It is a schematic structural diagram of an electronic device provided by an embodiment of the present application. Detailed implementation manners

[0043] In order to enable those skilled in the art to better understand the solutions of the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative efforts shall fall within the protection scope of the present application.

[0044] Please refer to Figure 1 and Figure 2, embodiments of the present application provide a radio frequency power amplifier 100, which is mainly used to amplify the input radio frequency signal, and it can be a push-pull power amplifier, a balanced power amplifier, a Doherty power amplifier, etc.

[0045] In this embodiment, the radio frequency power amplifier 100 may include M first transistors Q11, N second transistors Q21, a first capacitor C1, and a second capacitor C2. Among them, M first transistors Q11 are connected in parallel to output a first radio frequency signal, and N second transistors Q21 are connected in parallel to output a second radio frequency signal. M is a positive integer greater than 1, and N is a positive integer greater than 1. For example, M can be equal to 2, 3, 4, 5, 6, 7, 8, 12, 16, etc., and N can be equal to 2, 3, 4, 5, 6, 7, 8, 12, 16, etc. In some possible embodiments, M can be equal to N. Of course, M can be greater than N, or less than N, and this embodiment does not make specific limitations.

[0046] As an implementation manner, the first radio frequency signal and the second radio frequency signal can be a pair of differential signals. Therefore, the M first transistors Q11 and the N second transistors Q21 in this embodiment together constitute a differential power amplifier circuit. To improve the balance of the differential power amplifier circuit, M and N can be equal. Of course, the radio frequency power amplifier 100 may also include other power amplifier circuits (not shown in the figure), and the other power amplifier circuits can be arranged at the front stage of the first transistor Q11 and the second transistor Q21 to jointly form a circuit architecture of a multi-stage power amplifier circuit with the first transistor Q11 and the second transistor Q21.

[0047] In this embodiment, the first capacitor C1 may include a first electrode plate 120 and a second electrode plate 140 that are spaced apart. Among them, the output terminals 101 of the M first transistors Q11 are connected to the first electrode plate 120, and the second electrode plate 140 is used to output the first radio frequency signal. When the radio frequency power amplifier 100 is applied in a radio frequency front-end module provided with a balun, the second electrode plate 140 can be connected to the primary side of the balun. At this time, the first capacitor C1 and the primary side of the balun constitute an LC matching circuit. Since the first capacitor C1 is realized by laminating at least two electrode plates in a spaced manner, it can be realized by using the metal layer inside the chip or the metal layer of the radio frequency front-end module substrate. Compared with the matching capacitor in the SMD form, the hardware cost of the radio frequency front-end module can be reduced.

[0048] In this embodiment, the second capacitor C2 may include a third electrode plate 210 and a fourth electrode plate 230 that are spaced apart from each other. Among them, the output terminals 201 of N second transistors Q21 are connected to the third electrode plate 210, and the fourth electrode plate 230 is used to output a second radio frequency signal. When the radio frequency power amplifier is applied in a radio frequency front-end module provided with a balun, the fourth electrode plate may be connected to the primary side of the balun. At this time, the second capacitor and the primary side of the balun form an LC matching circuit. Since the second capacitor is realized by laminating at least two electrode plates spaced apart from each other, it can be realized by using the metal layer inside the chip or the metal layer of the substrate of the radio frequency front-end module. Compared with the matching capacitor in the SMD form, the hardware cost of the radio frequency front-end module can be reduced.

[0049] Specifically, M first transistors Q11 and N second transistors Q21 are both arranged along a first specified straight line L1. The extending direction of the first specified straight line L1 is the first direction X. The first capacitor C1 and the second capacitor C2 are arranged along the first direction X, which can make the arrangement of the components in the radio frequency power amplifier 100 more compact and reasonable, so as to facilitate the miniaturization design of the radio frequency power amplifier.

[0050] In some possible embodiments, M first transistors Q11, N second transistors Q21, the first capacitor C1 and the second capacitor C2 are all integrated in the chip. Specifically, the first electrode plate 120 and the second electrode plate 140 of the first capacitor C1 may be arranged in two adjacent metal layers of the chip, and the third electrode plate 210 and the fourth electrode plate 230 of the second capacitor C2 are also correspondingly arranged in two adjacent metal layers of the chip. Among them, the first electrode plate 120 and the third electrode plate 210 may be located in the same metal layer of the chip, and the second electrode plate 140 and the fourth electrode plate 230 may be located in the same metal layer of the chip.

[0051] In some possible embodiments, the first capacitor C1 may be connected between the output terminal 101 of the first transistor Q11 and the primary side of the balun, and the second capacitor C2 may be connected between the output terminal 201 of the second transistor Q21 and the primary side of the balun. Therefore, when connecting members for connecting the chip and the substrate are respectively provided on the second electrode plate 140 of the first capacitor C1 and the fourth electrode plate 230 of the second capacitor C2, by arranging M first transistors Q11 and N second transistors Q21 along the first specified straight line L1, and arranging the first capacitor C1 and the second capacitor C2 along the first direction X parallel to the first specified straight line L1, the two connecting members can also be arranged along the first direction X, that is, the two ends of the primary side of the balun are arranged along the first direction X, thereby improving the symmetry of the balun.

[0052] Further, the first specified line L1 can be parallel to a certain edge of the chip, so that the two connecting members are arranged along the same edge of the chip, enabling the entire balun to be located on the same side of the chip, facilitating the flexible winding of the primary side and the secondary side of the balun, and also contributing to improving the balance between the balun and the radio frequency power amplifier.

[0053] The implementation manners of each component in the radio frequency power amplifier 100 will be described below.

[0054] In this embodiment, M first transistors Q11 are arranged along the first specified line L1, and the M first transistors Q11 are connected in parallel to output a first radio frequency signal. In some possible embodiments, the M first transistors Q11 can be spaced apart in the first direction X, as shown in part (a) of Figure 3 The output terminals 101 of two adjacent first transistors Q11 are spaced apart in the first direction X. In some other possible embodiments, the M first transistors Q11 can be connected in the first direction X, as shown in part (b) of Figure 3 The output terminals 101 of two adjacent first transistors Q11 are directly connected in the first direction X.

[0055] As an implementation manner, the first transistor Q11 can be a bipolar transistor, such as a homojunction triode or a heterojunction bipolar transistor (HBT), and the output terminal 101 can be the collector of the triode or the HBT transistor. Of course, the first transistor Q11 can also be a unipolar transistor, such as a metal-oxide-semiconductor field-effect transistor (MOSFET), a silicon-on-insulator (SOI) field-effect transistor, a pseudomorphic high electron mobility transistor (pHEMT), etc. This embodiment does not make specific limitations in this regard.

[0056] Please refer to Figure 1 and Figure 2, the radio frequency power amplifier 100 may further include M first matching capacitors C11. One ends of the M first matching capacitors C11 are respectively connected to the input ends 103 of the M first transistors Q11 to block DC signals, avoid leakage of the DC bias signal input from the input end 101 of the first transistor Q11, and further ensure the normal operation of the first transistor Q11. The other ends of the M first matching capacitors C11 are connected to input the first radio frequency signal. Exemplarily, when the first transistor Q11 is an HBT transistor, one end of the first matching capacitor C11 is connected to the base of the HBT transistor, the emitter of the HBT transistor is grounded, and the collector of the HBT transistor is used to receive the power supply voltage and output the first radio frequency signal. Among them, the M first matching capacitors C11 can also play a role in broadband matching to improve the transmission quality of the first radio frequency signal.

[0057] In this embodiment, N second transistors Q21 are arranged along a first specified straight line L1, and the N second transistors Q21 are connected in parallel to output a second radio frequency signal. Therefore, the M first matching capacitors C11 and the N second transistors Q21 in this embodiment are both arranged along the first specified straight line L1, making the overall structure of the radio frequency power amplifier 100 more compact. Specifically, the arrangement manner and specific implementation manner of the second transistor Q21 can refer to the relevant introduction of the first transistor Q11. Exemplarily, the second transistor Q21 may be an HBT transistor, and the output end 201 of the second transistor Q21 may be the collector of the HBT transistor.

[0058] In some possible embodiments, M is equal to N, and the first transistor Q11 and the second transistor Q21 are transistors of the same type (for example, both are HBT transistors). The M first transistors Q11 and the N second transistors Q21 may be symmetrically arranged with respect to a second specified straight line L2. The extending direction of the second specified straight line L2 is the second direction Y, and the second direction Y intersects the first direction X. Exemplarily, the second direction Y may be perpendicular to the first direction X.

[0059] Since the M first transistors Q11 and the N second transistors Q21 are symmetrically arranged with respect to the second specified straight line L2, the signal balance of the first radio frequency signal and the second radio frequency signal can be improved to ensure the transmission efficiency of the radio frequency signal. Here, an explanation is given for "signal balance". "Signal balance" can be measured according to the performance indicators (such as insertion loss, return loss, and harmonic performance, etc.) of the two radio frequency signals during transmission. That is, the closer the performance indicators corresponding to the two radio frequency signals are, the better the signal balance of the two radio frequency signals. In an ideal situation, the performance indicators corresponding to the two radio frequency signals are exactly the same, indicating that the signal balance of the two radio frequency signals is the highest at this time.

[0060] In Figure 1and Figure 2 In the embodiment shown, the radio frequency power amplifier 100 may further include N second matching capacitors C21. One ends of the N second matching capacitors C21 are respectively connected to the input ends 203 (for example, the bases of HBT transistors) of the N second transistors Q21, and the other ends of the N second matching capacitors C21 are connected together to input a second radio frequency signal. For the specific implementation manner of the second matching capacitor C21, reference may be made to the relevant introduction of the first matching capacitor C11.

[0061] In this embodiment, the first capacitor C1 may be a planar capacitor, which is used to participate in impedance matching. The first capacitor C1 may also resonate with the equivalent inductance of an inductor or a balun in the backend circuit to suppress harmonic signals (such as second-order harmonic signals, third-order harmonic signals, etc.) in the first radio frequency signal. The first capacitor C1 may include a first electrode plate 120 and a second electrode plate 140. Among them, the first electrode plate 120 is connected to the output ends 101 of the M first transistors Q11, and the second electrode plate 140 is spaced from the first electrode plate 120, and is used to output the first radio frequency signal. Specifically, the first electrode plate 120 and the second electrode plate 140 may be metal thin films in two adjacent metal layers on the chip substrate respectively, and their main parts may be generally rectangular.

[0062] In this embodiment, the second capacitor C2 may be a planar capacitor, which is used to participate in impedance matching. The second capacitor C2 may also resonate with the equivalent inductance of an inductor or a balun in the backend circuit to suppress harmonic signals (such as second-order harmonic signals, third-order harmonic signals, etc.) in the second radio frequency signal. The second capacitor C2 may include a third electrode plate 210 and a fourth electrode plate 230. Among them, the third electrode plate 210 is connected to the output ends 201 of the N second transistors Q21, and the fourth electrode plate 230 is spaced from the third electrode plate 210, and is used to output the second radio frequency signal. Specifically, the third electrode plate 210 and the fourth electrode plate 230 may be metal thin films in two adjacent metal layers on the chip substrate respectively, and their main parts may be generally rectangular.

[0063] In some possible embodiments, the first capacitor C1 and the second capacitor C2 are arranged along the first direction X, so that the overall structure of the radio frequency power amplifier 100 is more compact. In some possible embodiments, the shape structures of the first capacitor C1 and the second capacitor C2 may be the same and symmetrically arranged with respect to the second specified line L2, which can improve the signal balance of the first radio frequency signal and the second radio frequency signal to ensure the transmission efficiency of the radio frequency signal.

[0064] In some possible embodiments, M first transistors Q11, N second transistors Q21, a first capacitor C1, and a second capacitor C2 are integrated within a chip 160 to improve the overall integration level of the radio frequency power amplifier 100. Since the first capacitor C1 and the second capacitor C2 in this embodiment are respectively planar capacitors integrated within the chip 160, rather than SMD capacitors disposed on a substrate, on the one hand, the hardware cost of the radio frequency front-end module can be reduced; on the other hand, the layout space of the substrate can be saved, which is beneficial to realizing the miniaturized design of the radio frequency front-end module. Specifically, the chip 160 can be a bare die or a packaged chip.

[0065] In this embodiment, the radio frequency power amplifier 100 may further include a first connecting member 1610 and a second connecting member 1630 for connecting the chip 160 to the substrate. The first connecting member 1610 is connected to the second electrode plate 140, and a first radio frequency signal is output via the first connecting member 1610. The second connecting member 1630 is connected to the fourth electrode plate 230, and a second radio frequency signal is output via the second connecting member 1630.

[0066] As an implementation manner, the radio frequency power amplifier 100 may adopt a wire bonding process, and the first connecting member 1610 and the second connecting member 1630 may be bonding wires respectively. Specifically, the first connecting member 12 may be a metal wire such as a copper wire or a silver wire. As another implementation manner, the radio frequency power amplifier 100 may adopt a flip-chip process, and the first connecting member 1610 and the second connecting member 1630 may be bumps respectively. Optionally, the bumps may be columnar bodies or spheres, and the materials used may be copper or tin. Exemplarily, the bumps may be copper pillars or tin balls.

[0067] In some possible embodiments, the first connecting member 1610 and the second connecting member 1630 may be symmetrically disposed with respect to a second specified line L2, which can improve the signal balance of the first radio frequency signal and the second radio frequency signal to ensure the transmission efficiency of the radio frequency signal.

[0068] In some possible embodiments, the first connecting member 1610 and the M first transistors Q11 are respectively located on opposite sides of the first capacitor C1 in the second direction Y, so that the radio frequency power amplifier 100 can utilize the width of the first capacitor C1 (i.e., the dimension of the first capacitor C1 in the first direction X) to reduce the gap between the M path lengths from the M first transistors Q11 to the first connecting member 1610, so that the fundamental wave load impedance and the harmonic wave load impedance corresponding to the M first transistors Q11 can be substantially the same, to ensure that the heat generation amounts of different first transistors Q11 are basically the same, improve the durability of the radio frequency power amplifier 100, and ensure the service life of the radio frequency power amplifier 100.

[0069] In some possible embodiments, the second electrode plate 140 has a first side 1401, and the first side 1401 is the side of the second electrode plate 140 away from the M first transistors Q11. The first connecting member 1610 is connected to the middle position of the first side 1401. Specifically, the first capacitor C1 can be substantially symmetrically arranged with respect to the first axis L11, and the extending direction of the first axis L11 is the second direction Y. The first connecting member 1610 can be arranged on the first axis L11, and the M first transistors Q11 can be symmetrically arranged with respect to the first axis L11. Therefore, in this embodiment, the M first transistors Q11, the first capacitor C1, and the first connecting member 1610 are all symmetrically arranged with respect to the first axis L11, thereby further reducing the gap between the M path lengths from the M first transistors Q11 to the first connecting member 1610 respectively, so as to improve the durability of the radio frequency power amplifier 100.

[0070] Similarly, the second connecting member 1630 and the N second transistors Q21 are respectively located on opposite sides of the second capacitor C2 in the second direction Y, so that the radio frequency power amplifier 100 can utilize the width of the second capacitor C2 (i.e., the dimension of the second capacitor C2 in the first direction X) to reduce the gap between the N path lengths from the N second transistors Q21 to the second connecting member 1630 respectively, so that the fundamental wave load impedance and the harmonic wave load impedance corresponding to the N second transistors Q21 can be substantially the same, ensuring that the heat generation amounts of different second transistors Q21 are basically the same, improving the durability of the radio frequency power amplifier 100, and guaranteeing the service life of the radio frequency power amplifier 100.

[0071] In some possible embodiments, the fourth electrode plate 230 has a second side 2301, and the second side 2301 is the side of the fourth electrode plate 230 away from the N second transistors Q21. The second connecting member 1630 is connected to the middle position of the second side 2301. Specifically, the second capacitor C2 can be substantially symmetrically arranged with respect to the second axis L21, and the extending direction of the second axis L21 is the second direction Y. The second connecting member 1630 can be arranged on the second axis L21, and the N second transistors Q21 can be symmetrically arranged with respect to the second axis L21. Therefore, in this embodiment, the N second transistors Q21, the second capacitor C2, and the second connecting member 1630 are all symmetrically arranged with respect to the second axis L21, thereby further reducing the gap between the N path lengths from the N second transistors Q21 to the second connecting member 1630 respectively, so as to improve the durability of the radio frequency power amplifier 100.

[0072] In some possible embodiments, the chip 160 has a side 1601 extending along the first direction X. The first connector 1610 is disposed adjacent to the side 1601, and the second connector 1630 is disposed adjacent to the side 1601. Here, "disposed adjacent" can be understood as the distance between the connector and the side 1601 in the second direction Y being less than or equal to a specified distance. For example, the specified distance can be 0.1 mm, 0.2 mm, 0.5 mm, 1 mm, 2 mm, etc. Therefore, in this embodiment, the first connector 1610 and the second connector 1630 are "close to" the side 1601. When the radio frequency power amplifier 100 is applied in a radio frequency front-end module, the first connector 1610 and the second connector 1630 can be used to be respectively connected to the primary side of the balun disposed on the substrate, improving the convenience of connection. In addition, since both the first connector 1610 and the second connector 1630 are located on the same side of the chip 160, the position layout of the balun on the substrate is simpler, saving the layout space of the substrate.

[0073] The following describes the specific implementation manners of the first capacitor C1 and the second capacitor C2.

[0074] In some possible embodiments, both the first capacitor C1 and the second capacitor C2 can adopt a capacitor structure with two layers of electrode plates stacked. That is to say, the first capacitor C1 is formed by stacking the first electrode plate 120 and the second electrode plate 140, and the second capacitor C2 is formed by stacking the third electrode plate 210 and the fourth electrode plate 230. The following takes the first capacitor C1 as an example for description. The implementation manner of the second capacitor C2 can refer to the relevant introduction of the first capacitor C1.

[0075] Please refer to Figure 4 , the radio frequency power amplifier 100 may include a substrate 10, and the substrate 10 functions to fix and support the metal layers and dielectric layers inside the radio frequency power amplifier 100. Specifically, the substrate 10 may be a single crystal silicon wafer, an SOI substrate, a compound semiconductor substrate, etc.

[0076] The first electrode plate 120 and the second electrode plate 140 are stacked on the substrate 10 and are disposed in different metal layers. Exemplarily, the first electrode plate 120 is closer to the substrate 10 than the second electrode plate 140, that is, the first electrode plate 120 is located between the second electrode plate 140 and the substrate 10. Specifically, the projections of the first electrode plate 120 and the second electrode plate 140 in the preset direction H overlap, and the preset direction H is the direction perpendicular to the metal layer. Here, the "preset direction H" can also be understood as the thickness direction of the radio frequency power amplifier 100. Of course, in some other possible embodiments, the second electrode plate 140 may be closer to the substrate 10 than the first electrode plate 120.

[0077] It should be noted here that one or more metal layers may also be provided between the first electrode plate 120 and the substrate 10, or multiple metal layers may also be provided on the side of the second electrode plate 140 facing away from the substrate 10. That is to say, the first electrode plate 120 and the second electrode plate 140 in this embodiment can be arranged in any two adjacent metal layers inside the chip.

[0078] In Figure 4 In the illustrated embodiment, the first capacitor C1 may further include a dielectric layer 170, and the dielectric layer 170 is located between the first electrode plate 120 and the second electrode plate 140 to achieve electrical isolation between the first electrode plate 120 and the second electrode plate 140. Among them, the contact surface of the dielectric layer 170 with the second electrode plate 140 is recessed toward the first electrode plate 120 to form a groove 1710, and at least part of the structure of the second electrode plate 140 is arranged in the groove 1710 to reduce the distance between the first electrode plate 120 and the second electrode plate 140, thereby increasing the capacitance value per unit area of the first capacitor C1.

[0079] Therefore, the method of setting grooves on the dielectric layer in this embodiment can reduce the distance between the first electrode plate 120 and the second electrode plate 140 to increase the capacitance value of the first capacitor C1. Therefore, when the capacitance value of the first capacitor C1 is a fixed value, reducing the distance between the electrode plates can reduce the area of the first electrode plate 120 and the second electrode plate 140 to reduce the overall size of the first capacitor C1.

[0080] Of course, the capacitance structure with double-layer electrode plates stacked, or the capacitance structure with multiple-layer electrode plates stacked can both adopt the above method of setting grooves on the dielectric layer. Specifically, grooves can be provided on the dielectric layer between every two adjacent (or at least partially adjacent) electrode plates to reduce the distance between the two adjacent electrode plates and further reduce the overall size of the capacitor.

[0081] In Figure 4 In the illustrated embodiment, the first connector 1610 is arranged on the surface of the top metal layer, and the "top metal layer" here refers to the metal layer with the farthest distance from the substrate 10 among the multiple metal layers. Taking the first connector 1610 as a bump as an example, the bump can be connected to the second electrode plate 140 in the first capacitor C1 through a pad and a metal via.

[0082] In Figure 4In the illustrated embodiment, both the first capacitor C1 and the second capacitor C2 employ a capacitor structure with two layers of electrode plates stacked on top of each other. That is to say, both the first capacitor C1 and the second capacitor C2 are MIM capacitors. Since the quality factor of the MIM capacitor (i.e., the Q value) is relatively high, the output quality of the radio frequency signal can be improved. Specifically, the capacitance value of the first capacitor C1 can be less than 10 pF, and the capacitance value of the second capacitor C2 can be less than 10 pF. For example, the capacitance values of the first capacitor C1 and the second capacitor C2 can be 6 pF, 8 pF, etc. respectively. Since the capacitance values of the first capacitor C1 and the second capacitor C2 are small, the required metal area is small, and MIM capacitors can be used to increase the Q value.

[0083] In addition, under normal circumstances, the higher the operating frequency of the radio frequency power amplifier 100, the smaller the required capacitance values of the first capacitor C1 and the second capacitor C2. Therefore, when the signal frequency of the first radio frequency signal is greater than 3 GHz and the signal frequency of the second radio frequency signal is greater than 3 GHz, the first capacitor C1 and the second capacitor C2 in the radio frequency power amplifier 100 can be in the form of MIM capacitors. Specifically, the frequency band where the above radio frequency signal is located can be the N77 frequency band, the N79 frequency band, etc.

[0084] In some other possible embodiments, both the first capacitor C1 and the second capacitor C2 can employ a capacitor structure with three or more layers of electrode plates stacked on top of each other. Here, taking the first capacitor C1 with a three-layer electrode plate stacked structure as an example for illustration, the implementation manner of the second capacitor C2 can refer to the relevant introduction of the first capacitor C1.

[0085] Please refer to Figure 5 , the first capacitor C1 may further include a fifth electrode plate 160 that is spaced apart from the first electrode plate 120 and the second electrode plate 140 respectively. Among them, the first electrode plate 120 is located between the second electrode plate 140 and the fifth electrode plate 160. Specifically, the second electrode plate 140, the first electrode plate 120, and the fifth electrode plate 160 are sequentially arranged on different metal layers along the preset direction H, and the projections of the second electrode plate 140, the first electrode plate 120, and the fifth electrode plate 160 in the preset direction H at least partially overlap, and the preset direction H is perpendicular to the plane where the metal layer is located. Here, the "preset direction H" can also be understood as the thickness direction of the radio frequency power amplifier 100.

[0086] In Figure 5 the illustrated embodiment, the first capacitor C1 may further include a dielectric layer 170. The number of dielectric layers 170 can be multiple. The dielectric layer 170 can be disposed between the first electrode plate 120 and the second electrode plate 140 to space the first electrode plate 120 and the second electrode plate 140 apart in the preset direction H; the dielectric layer 170 can also be disposed between the first electrode plate 120 and the fifth electrode plate 160 to space the first electrode plate 120 and the fifth electrode plate 160 apart in the preset direction H.

[0087] Specifically, the fifth electrode plate 160 is electrically connected to the second electrode plate 140. Therefore, the first electrode plate 120 and the second electrode plate 140 in this embodiment can be equivalent to a first sub-capacitor, and the first electrode plate 120 and the fifth electrode plate 160 can be equivalent to a second sub-capacitor. The first sub-capacitor and the second sub-capacitor are connected in parallel, so that the capacitance value of the first capacitor C1 is the sum of the capacitance values of the first sub-capacitor and the second sub-capacitor, that is, it has a larger capacitance value per unit area compared with the MIM capacitor. When the capacitance value of the first capacitor C1 is a fixed value, the area of the first electrode plate 120 and the second electrode plate 140 can be reduced by adding the fifth electrode plate 160 to reduce the overall size of the first capacitor C1.

[0088] Please refer to Figure 6 , the first electrode plate 120 may include a connected first body portion 1210 and a first extension portion 1230. The first body portion 1210 is generally rectangular, and the first body portion 1210 is used to connect M first transistors Q11. Among them, the first extension portion 1230 is located on the side of the first body portion 1210 away from the first transistor Q11 and protrudes outward relative to the first body portion 1210. It is not difficult to understand here that the names of the "first extension portion" and the "first body portion" are both named for convenience of description. In a specific example, there may or may not be an obvious boundary between the structures of the two. In some possible embodiments, the first body portion 1210 and the first extension portion 1230 may be an integrally formed structure, and the first body portion 1210 and the first extension portion 1230 are two parts at different positions on the first electrode plate 120 respectively.

[0089] In some possible embodiments, the first capacitor C1 may further be provided with a first metal via 130. The first metal via 130 is connected between the fifth electrode plate 160 and the second electrode plate 140, and the projection of the first metal via 130 in the preset direction H does not coincide with the first electrode plate 120. Therefore, the first metal via 130 in this embodiment will avoid the metal pattern (that is, the first extension portion 1230) on the first electrode plate 120 during connection to avoid the occurrence of a short circuit in the first capacitor C1 and ensure the normal operation of the first capacitor C1.

[0090] In Figure 6In the illustrated embodiment, the second electrode plate 140 is generally rectangular, having an adjacent first side 1401 and a third side 1403, wherein the length of the first side 1401 is greater than or equal to the length of the third side 1403. Specifically, the first side 1401 may be the long side of the second electrode plate 140, and the third side 1403 may be the short side of the second electrode plate 140. The first metal via 130 is disposed adjacent to the first side 1401. Here, the "adjacent setting" can be understood as the distance between the first metal via 130 and the first side 1401 in the second direction Y being less than or equal to a first preset distance. For example, the first preset distance may be 0.1 mm, 0.2 mm, 0.5 mm, 1 mm, 2 mm, etc. Therefore, the first metal via 130 in this embodiment is disposed "close to" the first side 1401 (i.e., the long side of the second electrode plate 140).

[0091] In addition, the length direction of the first metal via 130 is the same as the extending direction of the first side 1401. Here, the "length direction of the first metal via 130" may be perpendicular to the hole depth direction of the first metal via 130. Therefore, the first metal via 130 in this embodiment is generally strip-shaped along the long side of the second electrode plate 140, which can improve the Q value of the first capacitor C1 to reduce the insertion loss of the first capacitor C1.

[0092] In some possible embodiments, the radio frequency power amplifier 100 may further include a third connection member 1650 for receiving a supply voltage (VCC). The third connection member 1650 is connected to a side of the first electrode plate 120 away from the M first transistors Q11. Exemplarily, the third connection member 1650 may be a bump or a bonding wire. It can be easily found here that when feeding power from the third connection member 1650, the first capacitor C1 can also act as a DC blocking capacitor to prevent the power supply voltage (DC voltage VCC) from leaking to the output end (i.e., the side where the second electrode plate 140 is located). Specifically, in Figure 6 the illustrated embodiment, the third connection member 1650 is connected to a side of the first extension portion 1230 away from the first body portion 1210, and the third connection member 1650 and the first connection member 1610 are spaced apart in the first direction X.

[0093] In some possible embodiments, the number of the first metal vias 130 is two, and the two first metal vias 130 are arranged in sequence along the first side 1401. The projection of the third connecting member 1650 in the preset direction H is located between the two first metal vias 130, and the projection of the third connecting member 1650 in the preset direction H does not overlap with the two first metal vias 130. On the one hand, by providing the two first metal vias 130 in this embodiment, the connection reliability between the second electrode plate 140 and the fifth electrode plate 160 can be improved. On the other hand, both of the two first metal vias 130 avoid the third connecting member 1650, which can prevent the first capacitor C1 from short-circuiting and ensure that the first capacitor C1 can work normally.

[0094] Please refer to Figure 7 , the first capacitor C1 may further include a fifth electrode plate 160 that is spaced apart from the first electrode plate 120 and the second electrode plate 140 respectively. Among them, the second electrode plate 140 is located between the first electrode plate 120 and the fifth electrode plate 160. Specifically, the first electrode plate 120, the second electrode plate 140, and the fifth electrode plate 160 are arranged in sequence in different metal layers along the preset direction H, and the projections of the first electrode plate 120, the second electrode plate 140, and the fifth electrode plate 160 in the preset direction H at least partially overlap, and the preset direction H is perpendicular to the plane where the metal layer is located. Here, the "preset direction H" can also be understood as the thickness direction of the radio frequency power amplifier 100.

[0095] In Figure 7 the embodiment shown, the first capacitor C1 may further include a dielectric layer 170. The number of the dielectric layers 170 may be multiple. The dielectric layer 170 may be disposed between the first electrode plate 120 and the second electrode plate 140 to space the first electrode plate 120 and the second electrode plate 140 apart in the preset direction H; the dielectric layer 170 may also be disposed between the second electrode plate 140 and the fifth electrode plate 160 to space the second electrode plate 140 and the fifth electrode plate 160 apart in the preset direction H.

[0096] Specifically, the fifth electrode plate 160 is electrically connected to the first electrode plate 120. Therefore, the first electrode plate 120 and the second electrode plate 140 in this embodiment can be equivalent to a third sub-capacitor, and the second electrode plate 140 and the fifth electrode plate 160 can be equivalent to a fourth sub-capacitor. The third sub-capacitor and the fourth sub-capacitor are connected in parallel, so that the capacitance value of the first capacitor C1 is the sum of the capacitance values of the third sub-capacitor and the fourth sub-capacitor. When the capacitance value of the first capacitor C1 is a fixed value, by adding the fifth electrode plate 160, the capacitance value of the third sub-capacitor can be reduced, and further, the area of the first electrode plate 120 and the second electrode plate 140 can be reduced to reduce the overall size of the first capacitor C1.

[0097] Please refer to Figure 8, the second electrode plate 140 may include a connected second body portion 1410 and a second extension portion 1430. The second body portion 1410 is generally rectangular, and the second extension portion 1430 is located on a side of the second body portion 1410 away from the first transistor Q11 and protrudes outward relative to the second body portion 1410. It is not difficult to understand here that the names of the "second extension portion" and the "second body portion" are both made for convenience of description. In a specific example, there may or may not be an obvious boundary line between the structures of the two. In some possible embodiments, the second body portion 1410 and the second extension portion 1430 may be an integrally formed structure, and the second body portion 1410 and the second extension portion 1430 are respectively two parts at different positions on the second electrode plate 140.

[0098] Specifically, the second extension portion 1430 may be connected to a middle position on a side of the second body portion 1410 away from the first transistor Q11, and the first connecting member 1610 is connected to a side of the second extension portion 1430 away from the second body portion 1410.

[0099] In some possible embodiments, the first capacitor C1 may further be provided with a second metal via 190. The second metal via 190 is connected between the fifth electrode plate 160 and the first electrode plate 120, and a projection of the second metal via 190 in the preset direction H does not coincide with the second electrode plate 140. Therefore, the second metal via 190 in this embodiment will avoid the metal pattern (i.e., the second extension portion 1430) on the second electrode plate 140 when connecting, so as to avoid the occurrence of a short circuit in the first capacitor C1 and ensure that the first capacitor C1 can work normally.

[0100] In Figure 8 In the illustrated embodiment, the first electrode plate 120 is generally rectangular and has adjacent fifth side 1201 and sixth side 1203. Among them, the length of the fifth side 1201 is greater than or equal to the length of the sixth side 1203. Specifically, the fifth side 1201 may be the long side of the first electrode plate 120, and the sixth side 1203 may be the short side of the first electrode plate 120. The second metal via 190 is disposed adjacent to the fifth side 1201. Here, the "adjacent setting" can be understood as the distance between the second metal via 190 and the fifth side 1201 in the second direction Y is less than or equal to a second preset distance. For example, the second preset distance may be 0.1 mm, 0.2 mm, 0.5 mm, 1 mm, 2 mm, etc. Therefore, the second metal via 190 in this embodiment is disposed "close to" the fifth side 1201 (i.e., the long side of the first electrode plate 120).

[0101] In addition, the length direction of the second metal via 190 is the same as the extending direction of the fifth side 1201. Here, the "length direction of the second metal via 190" can be perpendicular to the via depth direction of the second metal via 190. Therefore, the second metal via 190 in this embodiment is generally strip-shaped along the long side of the first electrode plate 120, which can improve the Q value of the first capacitor C1 to reduce the insertion loss of the first capacitor C1.

[0102] In some possible embodiments, the radio frequency power amplifier 100 may further include a third connection member 1650 for receiving a supply voltage (VCC). The third connection member 1650 is connected to the side of the first electrode plate 120 away from the M first transistors Q11 (i.e., the fifth side 1201). Exemplarily, the third connection member 1650 may be a bump or a bonding wire. It can be easily found here that when feeding power from the third connection member 1650, the first capacitor C1 can also act as a DC-blocking capacitor to prevent the power supply voltage (DC voltage VCC) from leaking to the output end (i.e., the side where the first electrode plate 120 is located). Specifically, in Figure 8 the illustrated embodiment, the third connection member 1650 and the first connection member 1610 are spaced apart in the first direction X.

[0103] In some possible embodiments, the number of the second metal vias 190 is two. The two second metal vias 190 are arranged in sequence along the fifth side 1201. The projection of the third connection member 1650 in the preset direction H is located between the two second metal vias 190, and the projection of the first connection member 1610 in the preset direction H does not overlap with the two second metal vias 190. On the one hand, in this embodiment, by providing two second metal vias 190, the connection reliability between the first electrode plate 120 and the fifth electrode plate 160 can be improved. On the other hand, the two second metal vias 190 both avoid the first connection member 1610, which can prevent the first capacitor C1 from short-circuiting and ensure that the first capacitor C1 can work normally.

[0104] In Figure 5 and Figure 7 the illustrated embodiments, both the first capacitor C1 and the second capacitor C2 adopt a capacitor structure with three layers of electrode plates stacked on each other. That is to say, both the first capacitor C1 and the second capacitor C2 are Stack capacitors. Since the Stack capacitor has three layers of electrode plates, the capacitance values of the first capacitor C1 and the second capacitor C2 per unit area can be increased, and the occupied space of the first capacitor C1 and the second capacitor C2 can be saved. Specifically, the capacitance value of the first capacitor C1 can be greater than or equal to 10 pF, and the capacitance value of the second capacitor C2 can be greater than or equal to 10 pF. For example, the capacitance values of the first capacitor C1 and the second capacitor C2 can be 10 pF, 15 pF, 20 pF, etc. respectively.

[0105] In addition, under normal circumstances, the lower the operating frequency of the RF power amplifier 100, the larger the capacitance values required for the first capacitor C1 and the second capacitor C2. Therefore, when the signal frequency of the first RF signal is less than or equal to 3 GHz and the signal frequency of the second RF signal is less than or equal to 3 GHz, the first capacitor C1 and the second capacitor C2 in the RF power amplifier 100 can adopt the form of a Stack capacitor. Specifically, the frequency band where the above RF signal is located can be the sub-3G frequency band and so on.

[0106] Please refer to Figure 9 , this embodiment also provides an RF front-end module 300. The RF front-end module 300 is a component that integrates two or more discrete devices such as RF switches, low-noise amplifiers, filters, duplexers, and power amplifiers into an independent module, thereby improving the integration level and hardware performance and miniaturizing the volume.

[0107] In this embodiment, the RF front-end module 300 may include a substrate 320, the above-mentioned RF power amplifier 100, and a balun 340. Among them, the substrate 320 is generally rectangular and is used to fixedly support the components in the RF front-end module 300 (for example, the RF power amplifier 100, the balun 340, etc.). Specifically, the substrate 320 may be a copper-clad laminate, and by performing hole processing, electroless copper plating, electroplating copper, etching, etc. on the copper-clad laminate, a circuit can be printed on the surface of the substrate 320.

[0108] The RF power amplifier 100 is disposed on the substrate 320. For example, the RF power amplifier 100 may be integrated in a chip, and the chip may be connected to the substrate 320 by a wire bonding process or a flip-chip process. In Figure 9 As shown, the RF power amplifier 100 may include a first connector 1610 and a second connector 1630, and the RF power amplifier 100 is connected to the substrate 320 through the first connector 1610 and the second connector 1630. Among them, the first connector 1610 is used to output the first RF signal, and the second connector 1630 is used to output the second RF signal.

[0109] The balun 340 is disposed on the substrate 320. For example, the balun 340 may be formed by metal traces wound around the substrate 320. The balun 340 may include a primary side 3410 and a secondary side 3430 that are coupled to each other, and the primary side 3410 is connected to the RF power amplifier 100. Specifically, one end of the primary side 3410 is connected to the first connector 1610, the other end of the primary side 3410 is connected to the second connector 1630, and the primary side 3410 is symmetrically disposed on the substrate 320 with respect to the second specified straight line L2 to improve the signal balance of the first RF signal and the second RF signal and ensure the transmission efficiency of the RF signal.

[0110] In some possible embodiments, the primary side 3410 of the balun 340 can be substantially "C"-shaped and wound around the substrate 320. Here, it is not difficult to find that since both the first connector 1610 and the second connector 1630 are located on the same side of the chip, the balun can be entirely on the same side of the chip, and the layout can be more flexible and reasonable. It can also shorten the distance between the two ends of the primary side 3410 and enhance the coupling degree between the primary side and the secondary side of the balun 340.

[0111] One end of the secondary side 3430 is grounded, and the other end is used to output a radio frequency signal. Therefore, the balun 340 in this embodiment functions as a "differential-to-single-ended" converter. Among them, the secondary side 3430 can be wound around the substrate 320 and is located on different metal layers from the primary side 3410. Specifically, the projection of the secondary side 3430 in the thickness direction of the substrate 320 can be substantially coincident with the primary side 3410 to improve the coupling degree between the secondary side 3430 and the primary side 3410 and also save the layout space of the substrate 320.

[0112] Please refer to Figure 10 , this embodiment also provides an electronic device 400, which can be a 4G or 5G communication device such as a smart phone, a tablet computer, a smart watch, etc. Specifically, the electronic device 400 can include the above-mentioned radio frequency front-end module 300 to realize the reception and transmission of radio frequency signals. In addition, with the development of 5G technology, the requirements for the performance of the radio frequency front-end module are getting higher and higher. The technical solution of this application can be applied to the 5G radio frequency front-end module to improve the communication performance of 5G communication devices.

[0113] This application embodiment provides a radio frequency power amplifier 100, a radio frequency front-end module 300 configured with the radio frequency power amplifier 100, and an electronic device 400 configured with the radio frequency front-end module 300. The radio frequency power amplifier 100 can include M first transistors Q11, N second transistors Q21, a first capacitor C1, and a second capacitor C2. Among them, the M first transistors Q11 are connected in parallel to output a first radio frequency signal, and the N second transistors Q21 are connected in parallel to output a second radio frequency signal. M is a positive integer greater than 1, and N is a positive integer greater than 1.

[0114] In this embodiment, the first capacitor C1 may include a first electrode plate 120 and a second electrode plate 140 that are spaced apart from each other. Among them, the output terminals 101 of M first transistors Q11 are connected to the first electrode plate 120, and the second electrode plate 140 is used to output a first radio frequency signal. When the radio frequency power amplifier 100 is applied in a radio frequency front-end module provided with a balun, the second electrode plate 140 may be connected to the primary side of the balun. At this time, the first capacitor C1 and the primary side of the balun form an LC matching circuit. Since the matching capacitor (i.e., the first capacitor C1) is realized by laminating at least two electrode plates spaced apart from each other, compared with the matching capacitor in the SMD form, the hardware cost of the radio frequency front-end module can be reduced.

[0115] In this embodiment, the second capacitor C2 may include a third electrode plate 210 and a fourth electrode plate 230 that are spaced apart from each other. Among them, the output terminals 201 of N second transistors Q21 are connected to the third electrode plate 210, and the fourth electrode plate 230 is used to output a second radio frequency signal. When the radio frequency power amplifier is applied in a radio frequency front-end module provided with a balun, the fourth electrode plate may be connected to the primary side of the balun. At this time, the second capacitor and the primary side of the balun form an LC matching circuit. Since the matching capacitor (i.e., the second capacitor) is realized by laminating at least two electrode plates spaced apart from each other, compared with the matching capacitor in the SMD form, the hardware cost of the radio frequency front-end module can be reduced.

[0116] Specifically, M first transistors Q11 and N second transistors Q21 are both arranged along a first specified straight line L1, the extending direction of the first specified straight line L1 is a first direction X, and the first capacitor C1 and the second capacitor C2 are arranged along the first direction X, which can make the arrangement of components in the radio frequency power amplifier 100 more compact and reasonable, so as to facilitate the realization of the miniaturized design of the radio frequency power amplifier.

[0117] In the description of this application, as certain terms are used to refer to specific components in the specification and claims. Those skilled in the art should understand that hardware manufacturers may use different terms to refer to the same component. The specification and claims do not use the difference in names as a way to distinguish components, but use the difference in functions of components as the criterion for distinction. As mentioned throughout the specification and claims, "including" is an open-ended term, so it should be interpreted as "including but not limited to"; "substantially" means that those skilled in the art can solve technical problems within a certain error range and basically achieve technical effects.

[0118] In the description of this application, it should be understood that the terms "upper", "lower", "front", "rear", "left", "right", "inside", etc. indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing this application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation to this application.

[0119] In this application, unless otherwise clearly defined or limited, terms such as "install", "connect", "link", "fix", etc. shall be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or indirectly connected through an intermediate medium, or the communication inside two components, or just surface contact. For those of ordinary skill in the art, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0120] In the description of this specification, the description with reference to terms such as "one embodiment", "some embodiments", "examples", "specific examples", or "some examples", etc. means that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of this application. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described can be combined in a suitable manner in any one or more embodiments or examples. In addition, without contradiction, those skilled in the art can combine and combine the different embodiments or examples described in this specification and the features of different embodiments or examples.

[0121] In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" can explicitly or implicitly include at least one of such features. In the description of this application, "a plurality of" means at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0122] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application and are not intended to limit them; although this application has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that they can still modify the technical solutions recorded in the foregoing embodiments, or perform equivalent replacements for some of the technical features; and these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this application.

Claims

1. A radio frequency power amplifier, characterized in that, It includes M first transistors, N second transistors, a first capacitor, and a second capacitor; the M first transistors are connected in parallel to output a first radio frequency signal, and the N second transistors are connected in parallel to output a second radio frequency signal; M is a positive integer greater than 1, and N is a positive integer greater than 1; The first capacitor includes a first electrode plate and a second electrode plate spaced apart from each other; the output ends of the M first transistors are connected to the first electrode plate, and the second electrode plate is used to output the first radio frequency signal; The second capacitor includes a third electrode plate and a fourth electrode plate spaced apart from each other; the output ends of the N second transistors are connected to the third electrode plate, and the fourth electrode plate is used to output the second radio frequency signal; Wherein, the M first transistors and the N second transistors are both arranged along a first specified straight line, the extending direction of the first specified straight line is a first direction, and the first capacitor and the second capacitor are arranged along the first direction.

2. The RF power amplifier according to claim 1, wherein The M first transistors, the N second transistors, the first capacitor, and the second capacitor are integrated in a chip; The radio frequency power amplifier further includes a first connecting member and a second connecting member for connecting the chip to a substrate, the first connecting member is connected to the second electrode plate, and the first radio frequency signal is output via the first connecting member; the second connecting member is connected to the fourth electrode plate, and the second radio frequency signal is output via the second connecting member.

3. The RF power amplifier according to claim 2, wherein The first connecting member and the M first transistors are respectively located on opposite sides of the first capacitor in a second direction, and the second direction intersects with the first direction; The second connecting member and the N second transistors are respectively located on opposite sides of the second capacitor in the second direction.

4. The RF power amplifier according to claim 2, wherein, The second electrode plate has a first side, the first side is the side of the second electrode plate away from the M first transistors, and the first connecting member is connected to the middle position of the first side; The fourth electrode plate has a second side, the second side is the side of the fourth electrode plate away from the N second transistors, and the second connecting member is connected to the middle position of the second side.

5. The RF power amplifier according to claim 2, wherein The chip has a side edge extending along the first direction, the first connecting member is disposed adjacent to the side edge, and the second connecting member is disposed adjacent to the side edge.

6. The radio frequency power amplifier according to claim 2, wherein The first connecting member and the second connecting member are bonding wires; or The first connecting member and the second connecting member are bumps.

7. The RF power amplifier according to claim 1, wherein M is equal to N, the M first transistors and the N second transistors are symmetrically arranged with respect to a second specified straight line, the extending direction of the second specified straight line is a second direction, and the second direction intersects with the first direction.

8. The RF power amplifier according to claim 7, characterized in that, The second direction is perpendicular to the first direction.

9. The RF power amplifier according to claim 7, wherein The first capacitor and the second capacitor are symmetrically arranged with respect to the second specified straight line.

10. The radio frequency power amplifier according to any one of claims 1 to 9, characterized in that, The first capacitor further includes a fifth electrode plate spaced apart from the first electrode plate and the second electrode plate respectively; The fifth electrode plate is electrically connected to the second electrode plate, and the first electrode plate is located between the second electrode plate and the fifth electrode plate.

11. The radio frequency power amplifier according to claim 10, wherein The second electrode plate, the first electrode plate, and the fifth electrode plate are sequentially arranged in different metal layers along a preset direction. The first capacitor is further provided with a first metal via, and the first metal via is connected between the fifth electrode plate and the second electrode plate. The projection of the first metal via in the preset direction does not coincide with the first electrode plate.

12. The RF power amplifier according to claim 11, wherein, The second electrode plate has an adjacent first side and third side, and the length of the first side is greater than or equal to the length of the third side; The first metal via is disposed adjacent to the first side, and the length direction of the first metal via is the same as the extending direction of the first side.

13. The radio frequency power amplifier according to claim 11, wherein The radio frequency power amplifier further includes a third connecting member for receiving a supply voltage, and the third connecting member is connected to a side of the first electrode plate away from the M first transistors.

14. The RF power amplifier according to claim 13, characterized in that, The second electrode plate has an adjacent first side and third side, and the length of the first side is greater than or equal to the length of the third side; The number of the first metal vias is two, and the two first metal vias are sequentially arranged along the first side. The projection of the third connecting member in the preset direction is located between the two first metal vias, and the projection of the third connecting member in the preset direction does not overlap with the two first metal vias.

15. The radio frequency power amplifier according to claim 10, characterized in that, The capacitance value of the first capacitor is greater than or equal to 10 pF; or / and The signal frequency of the first radio frequency signal is less than or equal to 3 GHz.

16. The RF power amplifier according to any one of claims 1 to 9, characterized in that, The first capacitor further includes a fifth electrode plate disposed at intervals from the first electrode plate and the second electrode plate respectively; The fifth electrode plate is electrically connected to the first electrode plate, and the second electrode plate is located between the first electrode plate and the fifth electrode plate.

17. The RF power amplifier according to claim 16, characterized in that, The first electrode plate, the second electrode plate, and the fifth electrode plate are sequentially arranged in different metal layers along a preset direction. The first capacitor is further provided with a second metal via, and the second metal via is connected between the fifth electrode plate and the first electrode plate. The projection of the second metal via in the preset direction does not coincide with the second electrode plate.

18. The radio frequency power amplifier according to any one of claims 1 to 9, characterized in that The first electrode plate and the second electrode plate are disposed in different metal layers, and the projections of the first electrode plate and the second electrode plate in the preset direction overlap, and the preset direction is a direction perpendicular to the metal layer.

19. The radio frequency power amplifier according to claim 18, wherein, The capacitance value of the first capacitor is less than 10 pF; or / and The signal frequency of the first radio frequency signal is greater than 3 GHz.

20. A radio frequency front-end module, characterized in that, Comprising: A substrate; The radio frequency power amplifier according to any one of claims 1 to 19, disposed on the substrate; And A balun, disposed on the substrate; the balun includes a primary side and a secondary side that are coupled to each other, and the primary side is connected to the radio frequency power amplifier.

21. The RF front-end module according to claim 20, wherein The primary side of the balun is symmetrically disposed on the substrate with respect to a second specified line.

22. An electronic device, characterized in that, Comprising: The radio frequency front-end module according to claim 20 or 21.

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