Spray head structure and processing equipment of semiconductor device

Abstract

The utility model discloses a spray header structure and processing equipment of a semiconductor device. The front end of the spray header structure is connected with a plasma source, the rear end of the spray header structure is connected with a reaction cavity, the spray header structure comprises a quartz spray disc used for spraying atoms which are obtained from the plasma source and have reducibility into the reaction cavity so as to reduce a metal oxide film on the surface of a wafer in the reaction cavity, and the aperture of the spraying hole in the quartz spraying disc is positively correlated with the distance of the air inlet at the front end. Through the spray header structure, the recombination rate of atoms with reducibility in the transmission process can be reduced, and the utilization rate of process gas is improved, so that energy and equipment cost are saved, and the uniformity of a thin film deposited on the surface of a wafer can be improved.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor processes, and particularly relates to a showerhead structure and a processing device for semiconductor devices. Background Art

[0002] In the prior art, in the process of using process gas to reduce metal oxides through a processing device for semiconductor devices, it is usually necessary to first introduce the process gas into a remote plasma system (Remote Plasma System, RPS), dissociate it into the required reducing atoms, and then transport it to the inside of the chamber through the delivery pipe of the remote plasma source. The reducing atoms are sprayed onto the wafer surface through a shower plate to reduce the metal oxide film on the wafer surface.

[0003] Currently, the remote plasma source in the pre-clean (Pre Clean) device is set such that two reaction chambers share one remote plasma source, and the delivery pipeline of the remote plasma source is designed as an aluminum three-way pipe divided into two. First, the aluminum device itself has a very high recombination rate for reducing atoms, and during the transmission of reducing atoms, due to the long transmission distance, it is easy to recombine the reducing atoms required by the process into non-reducing gases. Therefore, the process requirements cannot be met. In addition, in the internal structure of the reaction chamber, including the shower tray, are all made of aluminum. In this case, the amount of reducing atoms reaching the wafer surface is very small, or almost all are recombined into non-reducing gas molecules, thus unable to achieve the reduction effect of the process metal oxide.

[0004] That is to say, under the same process requirements, if the delivery pipeline of the remote plasma source and these components in the reaction chamber are all made of aluminum, the requirement for the usage amount of process gas is very large, and the requirement for the power of the remote plasma source is also large, which directly increases the R & D cost of the process.

[0005] In order to solve the above problems existing in the prior art, there is an urgent need in the art for an improved spraying technology that can reduce the recombination rate of reducing atoms during their transmission, improve the utilization rate of process gas, thereby saving energy and equipment costs, and also improve the uniformity of the thin film deposited on the wafer surface. Summary of the Utility Model

[0006] A brief overview of one or more aspects is given below to provide a basic understanding of these aspects. This overview is not an exhaustive survey of all contemplated aspects and is neither intended to identify key or decisive elements of all aspects nor to define the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to a more detailed description given later.

[0007] In order to overcome the above-mentioned defects existing in the prior art, the present utility model provides a showerhead structure and a processing device for semiconductor devices, which can reduce the recombination rate of reducing atoms during their transmission, improve the utilization rate of process gases, thereby saving energy and equipment costs, and can also improve the uniformity of the thin film deposited on the wafer surface.

[0008] Specifically, according to the showerhead structure provided by the first aspect of the present utility model, its front end is connected to a plasma source and its rear end is connected to a reaction chamber. The showerhead structure includes: a quartz shower tray for spraying reducing atoms obtained from the plasma source into the reaction chamber to reduce the metal oxide film on the surface of the wafer in the reaction chamber. Among them, the aperture diameter of the spray holes on the quartz shower tray is positively correlated with the distance from the air inlet at the front end.

[0009] Further, in some embodiments of the present utility model, the front end of the showerhead structure is directly connected to the plasma source through a transmission pipeline. Among them, a quartz bushing is provided inside the transmission pipeline to transmit the reducing atoms to the reaction chamber.

[0010] Further, in some embodiments of the present utility model, the showerhead structure further includes: a quartz dome provided above the quartz shower tray and connected to the transmission pipeline. The opening angle of the dome slope of the quartz dome is greater than the disk diameter of the quartz shower tray, so that the reducing atoms are partially deflected along the dome slope to the edge of the quartz shower tray.

[0011] Further, in some embodiments of the present utility model, the air inlet at the front end is located directly above the quartz shower tray, and the aperture diameter of the spray holes on the quartz shower tray gradually increases from the center to the edge.

[0012] Further, in some embodiments of the present utility model, the reaction chamber includes an air extraction port for evacuating the reaction chamber during the process. The spray holes on the quartz shower tray are sparsely distributed in the area near the air extraction port and densely distributed in the area far from the air extraction port.

[0013] Further, in some embodiments of the present utility model, the quartz spray tray is divided into four quadrants, wherein the hole pitches of the spray holes in the first and fourth quadrants are symmetrical, and the hole pitches of the spray holes in the second and third quadrants are symmetrical.

[0014] Further, in some embodiments of the present utility model, a gas extraction ring is further included in the reaction chamber, which is arranged below the quartz spray tray and has one side corresponding to the gas extraction port. Among them, the aperture of the gas extraction holes on the gas extraction ring close to the gas extraction port is smaller, and the aperture of the gas extraction holes far from the gas extraction port is larger.

[0015] In addition, the processing equipment for semiconductor devices provided according to the second aspect of the present utility model includes: a plasma source for dissociating into reducing atoms; a reaction chamber in which a wafer with a metal oxide film deposited on its surface is placed; and the spray head structure provided according to the first aspect of the present utility model, the front end of which is connected to the plasma source and the rear end is connected to the reaction chamber, for spraying the reducing atoms into the reaction chamber to reduce the metal oxide film in the reaction chamber.

[0016] Further, in some embodiments of the present utility model, the gas inlet end of the plasma source is connected to a hydrogen source to introduce hydrogen into the plasma source, and the plasma source dissociates the hydrogen into reducing hydrogen atoms. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] After reading the detailed description of the embodiments of the present disclosure in conjunction with the following drawings, the above features and advantages of the present utility model can be better understood. In the drawings, the components are not necessarily drawn to scale, and components with similar related characteristics or features may have the same or similar reference numerals.

[0018] Figure 1 FIG. 1 shows a schematic structural diagram of a processing equipment for semiconductor devices provided according to some embodiments of the present utility model;

[0019] Figure 2 FIG. 2 shows a cross-sectional view of the processing equipment for semiconductor devices provided according to some embodiments of the present utility model;

[0020] Figure 3 FIG. 3 shows a schematic structural diagram of a quartz dome provided according to some embodiments of the present utility model; and

[0021] Figure 4 FIG. 4 shows a schematic structural diagram of a quartz spray tray provided according to some embodiments of the present utility model.

[0022] REFERENCE NUMERALS:

[0023] 100 Processing equipment for semiconductor devices;

[0024] 110 Plasma source;

[0025] 120 Reaction chamber;

[0026] 130 Exhaust port;

[0027] 140 Exhaust ring;

[0028] 150 Upper cover plate;

[0029] 151 Upper cover plate mounting ring;

[0030] 200 Sprinkler head structure;

[0031] 210 Quartz sprinkler tray;

[0032] 211 Sprinkler holes;

[0033] 212 Air inlet;

[0034] 220 Transfer pipeline;

[0035] 221 Quartz bushing;

[0036] 230 Quartz dome;

[0037] 231 Compression ring;

[0038] 232 Dome inclined surface;

[0039] 233 Gas baffle ring; and

[0040] α Opening angle. Detailed implementation manners

[0041] The following specific embodiments illustrate the implementation manners of the present utility model. Those skilled in the art can easily understand other advantages and effects of the present utility model from the content disclosed in this specification. Although the description of the present utility model will be introduced in conjunction with the preferred embodiments, this does not mean that the features of this utility model are limited to this implementation manner. On the contrary, the purpose of introducing the utility model in conjunction with the implementation manner is to cover other alternatives or modifications that may be extended based on the claims of the present utility model. In order to provide a deep understanding of the present utility model, many specific details will be included in the following description. The present utility model can also be implemented without using these details. In addition, in order to avoid confusing or obscuring the key points of the present utility model, some specific details will be omitted in the description.

[0042] In the description of the present utility model, it should be noted that unless otherwise clearly specified and defined, the terms "installation", "connection", and "coupling" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, and it can be the communication inside two components. For those of ordinary skill in the art, the specific meanings of the above terms in the present utility model can be understood according to specific circumstances.

[0043] In addition, the "upper", "lower", "left", "right", "top", "bottom", "horizontal", and "vertical" used in the following description should be understood as the orientations shown in this section and the relevant drawings. Such relative terms are only for convenience of description and do not represent that the devices described need to be manufactured or operated in a specific orientation, so it should not be construed as a limitation to the present utility model.

[0044] It can be understood that although terms such as "first", "second", and "third" can be used herein to describe various components, regions, layers, and / or parts, these components, regions, layers, and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers, and / or parts. Therefore, the first component, region, layer, and / or part discussed below can be referred to as the second component, region, layer, and / or part without departing from some embodiments of the present utility model.

[0045] As described above, in the Pre Clean device, the remote plasma source is arranged such that two reaction chambers share one remote plasma source, and the delivery pipeline of the remote plasma source is designed as an aluminum Y-shaped pipe divided into two. Firstly, the aluminum device itself has a very high recombination rate for atoms with reducibility. Moreover, during the transmission of atoms with reducibility, due to the relatively long transmission distance, it is easy to recombine the atoms with reducibility required by the process into gases without reducibility, thus failing to meet the process requirements. In addition, in the internal structure of the reaction chamber, including the shower tray, they are all made of aluminum. In this case, the amount of atoms with reducibility reaching the wafer surface is very small, or almost all are recombined into gas molecules without reducibility, thereby failing to achieve the reduction effect of process metal oxides. That is to say, under the same process requirements, if the delivery pipeline of the remote plasma source and these components in the reaction chamber are all made of aluminum, the requirement for the usage amount of process gas is very large, and the requirement for the power of the remote plasma source is also large, directly increasing the R & D cost of the process.

[0046] To solve the above problems existing in the prior art, the present utility model provides a spray head structure and a semiconductor device processing apparatus, which can reduce the recombination rate of reducing atoms during their transmission, improve the utilization rate of process gases, thereby saving energy and equipment costs, and can also improve the uniformity of the thin film deposited on the wafer surface.

[0047] In some non-limiting embodiments, the above spray head structure provided by the first aspect of the present utility model can be configured in the above semiconductor device processing apparatus provided by the second aspect of the present utility model.

[0048] The working principle of the above spray head structure will be described below in conjunction with some embodiments of semiconductor device processing apparatuses. Those skilled in the art can understand that these embodiments of semiconductor device processing apparatuses are only some non-limiting implementation manners provided by the present utility model, aiming to clearly show the main concept of the present utility model and provide some specific solutions convenient for the public to implement, rather than restricting all working modes or all functions of the spray head structure. Similarly, the spray head structure is also a non-limiting implementation manner provided by the present utility model and does not limit the configured objects in these semiconductor device processing apparatuses.

[0049] Please refer to Figure 1 , Figure 1 which shows a schematic structural diagram of a semiconductor device processing apparatus provided according to some embodiments of the present utility model.

[0050] As Figure 1 shown, in some embodiments of the present utility model, the semiconductor device processing apparatus 100 may include a plasma source 110, a reaction chamber 120, and a spray head structure 200. The plasma source 110 may be a remote plasma system (RPS) for dissociating reducing atoms. A wafer with a metal oxide film deposited on its surface may be placed inside the reaction chamber 120. The front end of the spray head structure 200 may be connected to the plasma source 110, and the rear end may be connected to the reaction chamber 120 for spraying reducing atoms into the reaction chamber 120 to reduce the metal oxide film in the reaction chamber 120.

[0051] Furthermore, since hydrogen atoms have strong reducibility, the intake end of the plasma source 110 may be connected to a hydrogen source to introduce hydrogen into the plasma source 110. As Figure 1 shown, through the plasma source 110, hydrogen can be dissociated into hydrogen ions (H + ) and reducing hydrogen atoms (H), and the hydrogen atoms can be transported to the spray head structure 200. Next, taking hydrogen atoms as reducing atoms as an example, the spray head structure 200 will be specifically introduced.

[0052] Please refer to Figure 2 , Figure 2 which shows a cross-sectional view of a processing apparatus for a semiconductor device provided according to some embodiments of the present invention.

[0053] As Figure 2 shown, in some embodiments of the present invention, the showerhead structure 200 may include: a quartz shower tray 210 for spraying reducing atoms obtained from the plasma source 110 into the reaction chamber 120 to reduce the metal oxide film on the surface of a wafer (not shown in the drawings) in the reaction chamber 120. Among them, the aperture of the spray holes 211 on the quartz shower tray 210 is positively correlated with the distance from the front-end air inlet 212.

[0054] Specifically, continuing as Figure 2 shown, the front end of the showerhead structure 200 is connected to the upper cover plate 150 and directly communicates with the plasma source 110 through the transmission pipeline 220. Compared with the three-way pipeline in the prior art, the hydrogen atoms transmitted from the plasma source 110 need to bypass two 90° turning angles to reach the internal transmission path of the reaction chamber. In this embodiment, the transmission pipeline 220 is changed to a direct transmission path. Therefore, the transmission distance can be significantly shortened by 2 / 3.

[0055] Furthermore, as Figure 2 shown, a quartz bushing 221 may also be provided inside the transmission pipeline 220 to transmit reducing hydrogen atoms to the reaction chamber 120. Since hydrogen atoms are prone to recombine into hydrogen molecules during long-distance transmission, and hydrogen molecules do not have reducing properties and have no reduction effect on the metal oxide film. Therefore, in this embodiment, by nesting a bushing made of quartz material inside the transmission pipeline 220, it is possible to isolate the hydrogen atoms from contacting the external aluminum transmission pipeline 220 during transmission, thereby avoiding the recombination of hydrogen atoms caused by aluminum devices. And, since the quartz material has the lowest recombination rate for hydrogen atoms, by using a bushing plate made of quartz material to transmit hydrogen atoms, the recombination rate of hydrogen atoms during transmission can be directly and significantly reduced, so that when the plasma source 110 dissociates the same amount of hydrogen gas, more hydrogen atoms can be transmitted to the wafer surface to meet the process requirements, thereby improving the utilization rate of hydrogen gas. On this basis, the supply of hydrogen gas can be further reduced, that is, energy can be saved, and the power of the plasma source 110 can be reduced, thereby making the process research and development more efficient and more economical.

[0056] Please continue to refer to Figure 2, in some preferred embodiments, the showerhead structure 200 may further include a quartz dome 230. The quartz dome 230 may be disposed above the quartz shower tray 210 and connected to the transfer pipeline 220. Its main function is to evenly distribute hydrogen atoms in the space between it and the quartz shower tray 210.

[0057] Specifically, referring to Figure 2 the locally enlarged area I in, the edge of the quartz dome 230 can be installed on the upper cover mounting ring 151, and the inlet in the middle thereof can be connected to the outlet of the transfer pipeline 220. Moreover, the edge of the quartz dome 230 can be fixed by a retaining ring 231, so as to be able to limit the six degrees of freedom of the quartz dome 230, that is, including the translational degrees of freedom along the three rectangular coordinate axes of x, y, and z and the rotational degrees of freedom around these three coordinate axes.

[0058] Furthermore, referring to Figure 3 , Figure 3 shows a schematic structural diagram of a quartz dome provided according to some embodiments of the present invention.

[0059] Combined with Figure 2 and Figure 3 shown, the opening angle α of the dome inclined surface 232 of the quartz dome 230 may preferably be greater than the disk diameter of the quartz shower tray 210 below it, so that the reducing hydrogen atoms can partially flow along the dome inclined surface 232 to the edge of the quartz shower tray 210, rather than all concentrating in the central area of the quartz shower tray 210. Different opening angles α may have different gas uniforming effects, so that the gas flow velocity and pressure above the quartz shower tray 210 are evenly distributed in the space above the quartz shower tray 210, thereby uniformly reducing the metal oxides on the surface of the wafer below.

[0060] In this embodiment, the opening angle α is related to the size of the quartz shower tray 210 below. If the size of the opening angle α does not cover the spraying diameter of the quartz shower tray 210, the hydrogen atoms will concentrate in the center of the quartz shower tray 210, resulting in a thicker film deposited in the central area on the surface of the wafer, while the film thickness at the edge is relatively thin, affecting the uniformity of the deposited thin film. According to the gas motion equation, by gradually increasing the opening angle α of the quartz dome 230, the flow rate of the hydrogen atoms will slowly decrease, so that the gas flow rate of the hydrogen atoms reaching the edge will gradually increase, and the film thickness on the surface of the wafer will tend to be uniform, effectively solving the defect of poor film thickness uniformity on the surface of the wafer caused by uneven gas uniforming.

[0061] Please continue to return to Figure 2, a gas baffle ring 233 can also be arranged between the quartz dome 230 and the quartz shower tray 210 to prevent hydrogen atoms from flowing outside the quartz shower tray 210 during the downward passage, which not only fails to meet the process requirements for the amount of hydrogen atoms above the wafer surface but also causes energy waste. Preferably, the gas baffle ring 233 is placed above the quartz shower tray 210 without mechanical fixation, which can make the processing faster, the installation more convenient, and the maintenance more economical.

[0062] Next, please refer to Figure 4 , Figure 4 which shows a schematic structural diagram of a quartz shower tray according to some embodiments of the present invention.

[0063] As Figure 4 shown, in some embodiments of the present invention, the intake port 212 at the front end in the shower head structure 200 can be located directly above the quartz shower tray 210. Since the gas field distribution above the wafer surface in the reaction chamber 120 can depend on the gas field distribution at the intake port 212 above the wafer, the aperture of the spray holes 211 on the quartz shower tray 210 is preferably gradually increased from the center to the edge. By designing the spray holes 211 in the central area to be the smallest, it can be used to prevent excessive hydrogen atoms introduced directly above the quartz shower tray 210 from flowing directly downward to the central area of the wafer surface. Secondly, the aperture of each ring of spray holes 211 is different and can be gradually increased layer by layer according to a preset value until the edge. For example, the aperture of the spray holes 211 can increase by 1.5 mm per ring from the inside to the outside. The aperture of the spray holes 211 at the edge of the quartz shower tray 210 is the largest, which can make the gas field more uniform above the wafer.

[0064] In this embodiment, by designing the spray holes 211 on the quartz shower tray 210, the gas flow rate of hydrogen atoms in the middle area of the quartz shower tray 210 can be further reduced, promoting the diffusion of hydrogen atoms to the edge area of the quartz shower tray 210, which is beneficial to forming a uniform thin film on the wafer surface and enabling the metal oxide film on the wafer surface to be uniformly reduced.

[0065] Please continue to return to Figure 2, Optionally, an air extraction port 130 may be included in the reaction chamber 120. One end of the air extraction port 130 may be connected to an air extraction pump for evacuating the reaction chamber 120 during the process. Specifically, optionally, during the thin film deposition process, the reaction chamber 120 may be evacuated through the air extraction port 130. This is equivalent to reducing the reaction volume, thereby improving the reaction rate and thus increasing the production capacity. In some other alternative embodiments, after the thin film deposition process is completed, during the process of cleaning the chamber, a large amount of cleaning gas may be introduced into the reaction chamber 120 through the showerhead structure 200, and then the reaction chamber 120 may be evacuated through the air extraction port 130, so that when the cleaning gas is evacuated, it flows through various positions in the reaction chamber 120, so that the components in the reaction chamber 120 can be cleaned, improving the effect of chamber cleaning.

[0066] Since the installation position and pumping speed of the air extraction port 130 of the whole machine are fixed, the area of the spray holes 211 on the quartz showerhead 210 can determine the gas field distribution on the entire wafer surface. On this basis, combined with Figure 1 , 2 As shown in and Figure 4, the areas in the first and fourth quadrants of the quartz showerhead 210 are relatively close to the air extraction port 130. The spray holes 211 in these two quadrant areas can be distributed relatively sparsely, while the spray holes 211 in the second and third quadrant areas far from the air extraction port 130 can be distributed relatively densely, so as to reduce the gas flow rate of hydrogen atoms in the area close to the air extraction port 130 during evacuation, but at the same time increase the gas flow rate of hydrogen atoms in the area far from the air extraction port 130, ensuring that the gas field of hydrogen atoms above the wafer surface is evenly distributed during the evacuation process, improving the uniformity of the film thickness.

[0067] Specifically, optionally, for the convenience of the actual manufacturing process, the quartz showerhead 210 may be divided into four quadrants. Among them, the hole pitches of the spray holes 211 in the first and fourth quadrants may be symmetric, and the hole pitches of the spray holes 211 in the second and third quadrants may be symmetric.

[0068] Those skilled in the art can understand that the above-mentioned solution of dividing the surface of the quartz showerhead 210 into four quadrants is only a non-limiting implementation manner provided by the present invention, aiming to clearly show the main concept of the present invention and provide a specific solution convenient for the public to implement, rather than limiting the protection scope of the present invention. Optionally, in some other embodiments, those skilled in the art can also adjust the angles of some quadrants based on the concept of the present invention to coordinate the errors in mechanism manufacturing or the errors in the gas field distribution above the wafer surface to achieve the same technical effect.

[0069] Furthermore, the gas field distribution above the wafer surface in the reaction chamber 120 can simultaneously depend on the gas field distribution at the gas inlet 212 above the wafer and the gas field distribution at the air extraction port 130 on the inner side of the reaction chamber 120. Combining Figure 2 and Figure 4 , in some preferred embodiments, the aperture diameter of the spray holes 211 on the quartz spray disk 210 can not only increase layer by layer from the inside to the outside, but also be relatively sparse in the area near the air extraction port 130 and relatively dense in the area far from the air extraction port 130, and the hole pitch design can be symmetric in the first and fourth quadrants and symmetric in the second and third quadrants.

[0070] Please continue to return to Figure 2 , optionally, the reaction chamber 120 can further include an air extraction ring 140 to further improve the uniformity of air extraction in the reaction chamber 120. The air extraction ring 140 can be disposed below the quartz spray disk 210. Specifically, during actual installation, the quartz spray disk 210 can be placed on the air extraction ring 140, and through the pin, the front and back of the quartz spray disk 210 can be distinguished to prevent incorrect installation. Similarly, there can be no mechanical fixation between the quartz spray disk 210 and the air extraction ring 140, which is used to make the processing faster, the installation more convenient, and the maintenance more economical.

[0071] One side of the air extraction ring 140 can correspond to the air extraction port 130. The aperture diameter of the air extraction holes (not shown in the drawings) on the air extraction ring 140 near the air extraction port 130 is smaller, while the aperture diameter of the air extraction holes far from the air extraction port 130 is larger.

[0072] Furthermore, in order to ensure the airtightness of the processing equipment 100 for semiconductor devices, various sealing rings can be provided at the joints of multiple parts of the equipment. For example, an O-ring can be provided at the joint between the upper cover plate 150 and the upper cover plate mounting ring 151.

[0073] In the present utility model, by selecting quartz materials with a relatively low recombination rate for the materials of the components in contact with the reducing hydrogen atoms, the processing equipment 100 for semiconductor devices can ultimately improve the utilization rate of process gases, such as hydrogen. Coupled with the structural designs of the quartz spray disk 210 and the quartz dome 230 in the above-mentioned multiple embodiments, a reasonable and uniform gas flow field can be formed above the wafer surface, increasing the number of hydrogen atoms reaching the wafer surface and having a reduction property, so that it is not necessary to increase the supply of hydrogen. That is to say, the supply of hydrogen can be reduced to a certain extent, and the power of the plasma source 110 can be reduced, but still enough hydrogen atoms can be ensured to be transported to the wafer surface in the reaction chamber 120 and used to reduce the metal oxide film on its surface. Therefore, it further effectively reduces the energy demand and the gas consumption of hydrogen, which is more economical and more environmentally friendly.

[0074] So far, the showerhead structure 200 provided by the first and second aspects of the present utility model, and the processing equipment 100 of semiconductor devices have been introduced. On this basis, the metal oxide film in the reaction chamber 120 can be restored by using the above-mentioned processing equipment 100 of semiconductor devices. Specifically, as shown in combination with Figure 1 and Figure 2 , after hydrogen is introduced into the plasma source 110, it is dissociated into components such as hydrogen atoms required by the process. Then, a sufficient amount of hydrogen atoms can be first transported into the chamber between the quartz showerhead plate 210 and the quartz dome 230 in the reaction chamber 120 through the transfer pipeline 220. After the gas is evenly distributed by the quartz dome 230, the hydrogen atoms pass through the quartz showerhead plate 210 and are evenly sprayed on the surface of the wafer, so as to utilize the reducibility of hydrogen atoms to the metal oxide, restore the metal oxide film on the wafer surface, and meet the process requirements.

[0075] In summary, the present utility model provides a showerhead structure and a processing equipment of semiconductor devices, which can reduce the recombination rate of reducing atoms during their transmission process, improve the utilization rate of process gases, thereby saving energy and equipment costs, and can also improve the uniformity of the thin film deposited on the wafer surface.

[0076] The foregoing description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be apparent to those skilled in the art, and the general principles defined herein can be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples and designs described herein, but should be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A spray head structure, with its front end connected to a plasma source and its rear end connected to a reaction chamber, characterized in that The structure of the showerhead includes: A quartz shower tray for spraying the reducing atoms obtained from the plasma source into the reaction chamber to reduce the metal oxide film on the surface of the wafer in the reaction chamber. The aperture diameter of the spray holes on the quartz shower tray is positively correlated with the distance from the intake port at the front end.

2. The shower head structure according to claim 1, wherein, The front end of the showerhead structure is directly connected to the plasma source through a transmission pipeline. A quartz bushing is provided inside the transmission pipeline to transport the reducing atoms to the reaction chamber.

3. The sprinkler head structure according to claim 2, characterized in that, It further includes: A quartz dome is arranged above the quartz shower tray and connected to the transmission pipeline. The opening angle of the dome slope of the quartz dome is greater than the disk diameter of the quartz shower tray, so that the reducing atoms flow along the dome slope to part of the edge of the quartz shower tray.

4. The spray head structure according to claim 1, characterized in that, The intake port at the front end is located directly above the quartz shower tray, and the aperture diameter of the spray holes on the quartz shower tray gradually increases from the center to the edge.

5. The sprinkler head structure according to claim 1, wherein, The reaction chamber includes an air extraction port for evacuating the reaction chamber during the process. The spray holes on the quartz shower tray are sparsely distributed in the area near the air extraction port and densely distributed in the area far from the air extraction port.

6. The sprinkler head structure according to claim 3 or 5, characterized in that, The quartz shower tray is divided into four quadrants. The hole pitches of the spray holes in the first and fourth quadrants are symmetrical, and the hole pitches of the spray holes in the second and third quadrants are symmetrical.

7. The sprinkler head structure according to claim 5, characterized in that, The reaction chamber further includes an air extraction ring arranged below the quartz shower tray, and one side corresponds to the air extraction port. The aperture diameter of the air extraction holes on the air extraction ring near the air extraction port is smaller, and the aperture diameter of the air extraction holes far from the air extraction port is larger.

8. A processing apparatus for a semiconductor device, characterized in that, It includes: A plasma source for dissociating reducing atoms; A reaction chamber with a wafer having a metal oxide film deposited on its surface placed inside; And The showerhead structure according to any one of claims 1 to 7, whose front end is connected to the plasma source and the rear end is connected to the reaction chamber, for spraying the reducing atoms into the reaction chamber to reduce the metal oxide film in the reaction chamber.

9. The processing equipment according to claim 8, characterized in that, The intake end of the plasma source is connected to a hydrogen source to introduce hydrogen into the plasma source, and the plasma source dissociates the hydrogen into reducing hydrogen atoms.

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