Vapor deposition device

Abstract

The utility model discloses a vapor deposition device, which comprises a reaction device, a vapor deposition device, a gas-liquid separation device, a gas-liquid separation device, a gas-liquid separation device, a gas-liquid separation device, a gas-liquid separation device and a gas-liquid separation device, and is characterized in that a reaction cavity is formed in the reaction device; the sublimation equipment, the sublimation equipment and the reaction equipment form an integrated structure, a connecting surface attached to the reaction equipment is formed on the sublimation equipment, a sublimation cavity communicated with the reaction cavity is formed in the sublimation equipment, an outlet of the sublimation cavity is formed in the connecting surface, and gas in the sublimation cavity flows from the outlet of the sublimation cavity to the inlet of the reaction cavity. According to the vapor deposition device disclosed by the utility model, the sublimation equipment and the reaction equipment are constructed into an integrated structure, the connecting surface attached to the reaction equipment is formed on the sublimation equipment, the sublimation cavity outlet communicated with the reaction cavity inlet is formed on the connecting surface, and gas in the sublimation cavity flows towards the reaction cavity inlet from the sublimation cavity outlet; therefore, the gas is prevented from leaking from the joint of the sublimation equipment and the reaction equipment, and the safety and the reliability of the vapor deposition device during operation are improved.

Description

Technical Field

[0001] The utility model relates to the technical field of chemical vapor deposition equipment manufacturing, in particular to a vapor deposition device. Background Art

[0002] In the related art, the sublimation equipment in the prior art is an independent equipment located outside the reaction equipment. The sublimation equipment and the reaction equipment are connected by pipelines. Since the sublimation equipment needs to heat and keep warm the powder after sublimation and then send it into the reaction equipment, when the temperature rises, gas leakage will occur at the sealed part of the pipeline when the sublimation equipment conveys gas to the reaction equipment, seriously affecting the stability and safety in the gas deposition process. Summary of the Utility Model

[0003] The utility model aims to at least solve one of the technical problems existing in the prior art. For this reason, an object of the utility model is to provide a vapor deposition device. According to the vapor deposition device of the utility model, the sublimation equipment and the reaction equipment are constructed as an integrated structure. A connection surface fitting the reaction equipment is formed on the sublimation equipment, and a sublimation chamber outlet communicating with the reaction chamber inlet is formed on the connection surface. The gas in the sublimation chamber flows from the sublimation chamber outlet towards the reaction chamber inlet, thereby preventing gas leakage from the connection between the sublimation equipment and the reaction equipment, and improving the safety and reliability during the operation of the vapor deposition device.

[0004] The vapor deposition device according to the utility model includes: a reaction equipment, in which a reaction chamber is formed, and an inlet of the reaction chamber is further provided on the reaction equipment; a sublimation equipment, which is constructed as an integrated structure with the reaction equipment, a connection surface fitting the reaction equipment is formed on the sublimation equipment, a sublimation chamber communicating with the reaction chamber is formed in the sublimation equipment, an outlet of the sublimation chamber is formed on the connection surface, and the gas in the sublimation chamber flows from the sublimation chamber outlet towards the reaction chamber inlet.

[0005] According to the vapor deposition device of the utility model, the sublimation equipment and the reaction equipment are constructed as an integrated structure. A reaction chamber inlet is formed on the reaction equipment, a connection surface fitting the reaction equipment is formed on the sublimation equipment, and a sublimation chamber outlet communicating with the reaction chamber inlet is formed on the connection surface. The gas in the sublimation chamber can only flow from the sublimation chamber outlet direction towards the reaction chamber inlet direction, ensuring the consistency of the direction when the gas in the sublimation chamber flows into the reaction chamber, thereby effectively preventing gas leakage from the connection between the sublimation equipment and the reaction equipment, and improving the safety and reliability during the operation of the vapor deposition device.

[0006] According to some embodiments of the present utility model, the vapor deposition device further includes: an outer housing, an accommodation cavity for accommodating the reaction device and the sublimation device is formed inside the outer housing, and an air inlet communicating with the sublimation cavity and an air outlet communicating with the reaction cavity are formed on the outer housing.

[0007] According to some embodiments of the present utility model, the sublimation device includes: a sublimation housing, a sublimation cavity is formed inside the sublimation housing; a partition, the partition is disposed in the sublimation cavity, through holes penetrating in the thickness direction are formed on the partition, and the through holes are configured to be multiple and arranged at intervals in the length direction of the partition; a feed pipe, the feed pipe passes through the air inlet and communicates with the sublimation cavity, and the feed pipe is adapted to output the material to be sublimated into the sublimation cavity.

[0008] According to some embodiments of the present utility model, an open slot is formed on one side of the sublimation housing away from the connection surface, and at least part of the feed pipe is accommodated in the open slot.

[0009] According to some embodiments of the present utility model, the partitions are configured to be multiple and arranged at intervals in the reaction cavity.

[0010] According to some embodiments of the present utility model, it includes: a heat insulation layer, and the heat insulation layer is attached to at least part of the outer peripheries of the reaction device and the sublimation device.

[0011] According to some embodiments of the present utility model, heat conduction holes are formed on the heat insulation layer attached to the connection surface.

[0012] According to some embodiments of the present utility model, the heat conduction holes are configured to be multiple micro holes arranged at intervals.

[0013] According to some embodiments of the present utility model, the vapor deposition device further includes: a heater, the heater is disposed on the reaction device and located between the outer surface of the reaction device and the heat insulation layer, and the heater is used to heat the reaction device.

[0014] According to some embodiments of the present utility model, the vapor deposition device further includes: a first pipeline, one end of the first pipeline communicates with the sublimation cavity, the first pipeline extends in a direction parallel to the connection surface, and the first pipeline is configured to be multiple; a second pipeline, one end of the second pipeline communicates with the first pipeline, the other end of the second pipeline communicates with the reaction cavity, the second pipeline extends in a direction perpendicular to the connection surface, and the second pipeline is configured to be multiple and arranged in one-to-one correspondence with the first pipeline.

[0015] Additional aspects and advantages of the present utility model will be given in part in the following description, become apparent in part from the following description, or be understood through the practice of the present utility model. Brief Description of the Drawings

[0016] The above and / or additional aspects and advantages of the present utility model will become apparent and be readily understood from the following description of embodiments in conjunction with the accompanying drawings, where:

[0017] Figure 1 FIG. 8 is a schematic structural diagram of a chemical vapor deposition apparatus according to an embodiment of the present utility model;

[0018] Figure 2 FIG. 12 is a schematic structural diagram of the connection between a sublimation device and a reaction device according to the present utility model.

[0019] Reference Numerals:

[0020] 100, chemical vapor deposition apparatus;

[0021] 11, reaction device; 101, reaction chamber;

[0022] 21, sublimation device; 201, sublimation chamber; 22, partition; 23, feed pipe;

[0023] 24, first pipeline; 25, second pipeline; 202, open tank; 203, through hole;

[0024] 31, outer housing; 32, heat insulation layer; 33, heater; 301, accommodation chamber; 302, heat conduction hole. Detailed Embodiments

[0025] Embodiments of the present utility model will be described in detail below. Examples of the embodiments are shown in the accompanying drawings, where the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary only for explaining the present utility model and should not be construed as limiting the present utility model.

[0026] In the related art, the sublimation devices in the prior art are all independent devices located outside the reaction device, and the sublimation device and the reaction device are connected by pipelines. Since the sublimation device needs to heat and keep warm the powder after sublimation and then send it into the reaction device, when the temperature rises, gas leakage will occur at the sealed part of the pipeline when the sublimation device transports gas to the reaction device, seriously affecting the stability and safety during the chemical vapor deposition process.

[0027] The following will refer to Figure 1 - Figure 2 to describe a chemical vapor deposition apparatus according to an embodiment of the present utility model.

[0028] The vapor deposition device 100 according to the present utility model includes: a reaction device 11 and a sublimation device 21. A reaction chamber 101 is formed inside the reaction device 11, and an inlet of the reaction chamber 101 is further provided on the reaction device 11. The sublimation device 21 and the reaction device 11 are configured as an integral structure. A connection surface that fits with the reaction device 11 is formed on the sublimation device 21. A sublimation chamber 201 that communicates with the reaction chamber 101 is formed inside the sublimation device 21. An outlet of the sublimation chamber 201 is formed on the connection surface. The gas in the sublimation chamber 201 flows from the outlet of the sublimation chamber 201 towards the inlet of the reaction chamber 101.

[0029] In some specific embodiments, the vapor deposition device 100 is composed of a reaction device 11 and a sublimation device 21. The sublimation device 21 is used to heat a solid material to its sublimation temperature to directly transform it from a solid state to a gaseous state. The reaction device 11 is used to deposit a thin film on a substrate material. A sublimation chamber 201 for accommodating sublimated gas is formed inside the sublimation device 21. A reaction chamber 101 for accommodating the substrate material and carrying out a reaction is formed inside the reaction device 11. The sublimation device 21 and the reaction device 11 are configured as an integral structure. An inlet of the reaction chamber 101 is formed on the reaction device 11. A connection surface that fits with the reaction device 11 is formed on the sublimation device 21. An outlet of the sublimation chamber 201 that communicates with the inlet of the reaction chamber 101 is formed on the connection surface. The gas in the sublimation chamber 201 can only flow from the outlet direction of the sublimation chamber 201 towards the inlet direction of the reaction chamber 101, ensuring the straightness of the direction when the gas in the sublimation chamber 201 flows into the reaction chamber 101. Thus, it effectively prevents gas from leaking at the connection between the sublimation device 21 and the reaction device 11, improving the safety and reliability during the operation of the vapor deposition device 100.

[0030] The vapor deposition device 100 according to the present utility model is configured as an integral structure through the sublimation device 21 and the reaction device 11. An inlet of the reaction chamber 101 is formed on the reaction device 11. A connection surface that fits with the reaction device 11 is formed on the sublimation device 21. An outlet of the sublimation chamber 201 that communicates with the inlet of the reaction chamber 101 is formed on the connection surface. The gas in the sublimation chamber 201 can only flow from the outlet direction of the sublimation chamber 201 towards the inlet direction of the reaction chamber 101, ensuring the straightness of the direction when the gas in the sublimation chamber 201 flows into the reaction chamber 101. Thus, it effectively prevents gas from leaking at the connection between the sublimation device 21 and the reaction device 11, improving the safety and reliability during the operation of the vapor deposition device 100.

[0031] According to some embodiments of the present utility model, the vapor deposition device 100 further includes: an outer housing 31. An accommodation chamber 301 for accommodating the reaction device 11 and the sublimation device 21 is formed inside the outer housing. An air inlet that communicates with the sublimation chamber 201 and an air outlet that communicates with the reaction chamber 101 are formed on the outer housing 31.

[0032] In some specific embodiments, a housing 31 is further provided inside the vapor deposition device 100. An accommodation cavity 301 is formed inside the housing 31. A sublimation device 21 and a reaction device 11 are accommodated in the accommodation cavity 301. An air inlet and an air outlet are formed on the housing 31. The air inlet is communicated with the sublimation cavity 201, and the air outlet is communicated with the reaction cavity 101. The substance to be sublimated and some reaction gases can enter the sublimation cavity 201 through the air inlet. The waste gas after the reaction in the reaction cavity 101 can be discharged from the air outlet. When the gases in the reaction device 11 and the sublimation device 21 leak, the leaked gases from the reaction device 11 and the sublimation device 21 will flow into the accommodation cavity 301 and be discharged through a specific path in the accommodation cavity 301. The gases leaked from the reaction device 11 and the sublimation device 21 will not directly flow into the outside world, thereby improving the safety and reliability during the operation of the vapor deposition device 100, effectively preventing the damage to the device caused by the gas leakage in the reaction device 11 and the sublimation device 21, and ensuring the working efficiency and stability of the vapor deposition device.

[0033] According to some embodiments of the present invention, the sublimation device 21 includes: a sublimation housing, a partition plate 22, and a feed pipe 23. A sublimation cavity 201 is formed inside the sublimation housing; the partition plate 22 is disposed in the sublimation cavity 201. Through holes 203 penetrating in the thickness direction are formed on the partition plate 22. The through holes 203 are configured as a plurality of through holes arranged at intervals in the length direction of the partition plate 22; the feed pipe 23 passes through the air inlet and is communicated with the sublimation cavity 201. The feed pipe 23 is adapted to output the substance to be sublimated into the sublimation cavity 201.

[0034] In some specific embodiments, the sublimation device 21 is composed of a sublimation housing, a partition plate 22, and a feed pipe 23. A sublimation chamber 201 suitable for placing the substance to be sublimated is formed inside the sublimation housing. A partition plate 22 is arranged in the sublimation chamber 201. A plurality of through holes 203 are arranged at intervals in the length direction of the partition plate 22. The through holes 203 penetrate the partition plate 22 in the thickness direction. These through holes 203 form a complex network structure. Since air is a poor heat conductor, the air layer in these through holes 203 can effectively reduce heat conduction. At the same time, the presence of a plurality of through holes 203 increases the path length of heat transfer, making it more difficult for heat to quickly pass through the partition plate 22, thereby improving the heat preservation effect inside the sublimation chamber 201 and ensuring the stability of the temperature in the sublimation chamber 201. At the same time, the structure of the plurality of through holes 203 on the partition plate 22 provides a large surface area, which helps to form a static air film on the surface of the partition plate 22. The static air layer can significantly reduce convective heat transfer, further enhancing the heat insulation effect in the sublimation chamber 201 and improving the heat preservation performance in the sublimation chamber 201. In addition, the uniformly dispersed through holes 203 can make the gas in the sublimation chamber 201 more evenly distributed in the sublimation chamber 201, ensuring the consistency of the gas concentration in the sublimation chamber 201 and improving the uniformity of the airflow entering the reaction chamber 101 subsequently, thereby ensuring the quality and consistency of the deposited thin film. The feed pipe 23 passes through the air inlet and communicates with the sublimation chamber 201. The feed pipe 23 can directly send the substance to be sublimated into the sublimation chamber 201, ensuring that the substance to be sublimated can quickly enter the high-temperature environment for sublimation, and guaranteeing the sublimation efficiency and effect of the sublimation device 21.

[0035] According to some embodiments of the present invention, an open slot 202 is formed on one side of the sublimation housing away from the connection surface. At least part of the feed pipe 23 is received in the open slot 202. The open slot 202 can protect the feed pipe 23 from external mechanical damage or other external factors, thereby improving the safety and reliability of the sublimation device 21 during feeding. The substance to be sublimated in the feed pipe 23 can be preheated in the open slot 202 to reach an appropriate temperature before entering the sublimation chamber 201, improving the sublimation efficiency.

[0036] According to some embodiments of the present invention, the partition plate 22 is configured to be multiple and arranged at intervals in the reaction chamber 101. The multiple partition plates 22 can disperse the gas flowing from the sublimation chamber 201 to the reaction chamber 101 into multiple small airflows, making the gas more evenly distributed in the reaction chamber 101 and the sublimation chamber 201, improving the quality and uniformity of the deposited thin film. The multiple partition plates 22 can further enhance the heat preservation effect in the sublimation chamber 201, slow down the temperature change rate in the sublimation chamber 201, ensure the stability of the temperature in the sublimation chamber 201, and improve the working stability of the sublimation device 21.

[0037] According to some embodiments of the present utility model, the chemical vapor deposition device 100 includes: a thermal insulation layer 32, which is attached to at least a part of the outer periphery of the reaction device 11 and the sublimation device 21 to reduce the heat loss of the chemical vapor deposition device 100, ensure the temperature stability inside the reaction device 11 and the sublimation device 21, and ensure the effectiveness and efficiency of the chemical vapor deposition process. The thermal insulation layer 32 is usually made of materials with good heat insulation performance and high temperature resistance, such as ceramic fiber, asbestos, aluminum silicate fiber, etc. These materials can effectively prevent the heat on the reaction device 11 and the sublimation device 21 from dissipating to the external environment through radiation, convection, and conduction, so as to ensure that the reaction device 11 has a sufficient reaction temperature and the sublimation device 21 has a sufficient sublimation temperature. In addition, the thermal insulation layer 32 can be configured as a single-layer or multi-layer composite structure to enhance the heat insulation effect and improve the heat insulation effect of the reaction device 11 and the sublimation device 21.

[0038] According to some embodiments of the present utility model, heat conduction holes 302 are formed in the thermal insulation layer 32 attached to the connection surface. The heat conduction holes 302 can allow a certain amount of heat to be transferred from the reaction device 11 to the sublimation device 21, thereby realizing the heating of the sublimation device 21 and ensuring the sublimation effect of the substance to be sublimated in the sublimation device 21. There is no need to additionally provide a separate heating device to heat the sublimation device 21. On the one hand, the number of internal components of the chemical vapor deposition device 100 is reduced, the design complexity and manufacturing cost of the chemical vapor deposition device 100 are reduced, and at the same time, the chemical vapor deposition device 100 is easier to maintain and operate. On the other hand, there is no need for additional space to separately install the heating device for the sublimation device 21, making the entire chemical vapor deposition device 100 more compact and facilitating the layout in a limited space.

[0039] According to some embodiments of the present utility model, the heat conduction holes 302 are configured as a plurality of micro-holes arranged at intervals. The plurality of micro-holes can make the heat transfer from the reaction device 11 to the sublimation device 21 more uniform, reduce the formation of local hot spots, thereby ensuring that the temperature distribution in the sublimation chamber 201 is more uniform and ensuring the sublimation effect of the substance to be sublimated by the sublimation device 21. By adjusting the number, size, and layout of the micro-holes, the heat flow from the reaction device 11 to the sublimation device 21 can be precisely controlled to achieve more refined thermal management. The design of the micro-holes enables necessary heat exchange between the reaction device 11 and the sublimation device 21, while the overall thermal insulation layer 32 can still maintain good heat insulation performance.

[0040] According to some embodiments of the present utility model, the chemical vapor deposition device 100 further includes: a heater 33, which is disposed on the reaction device 11 and located between the outer surface of the reaction device 11 and the thermal insulation layer 32. The function of the heater 33 is to heat the reaction device 11 so that the reaction chamber 101 reaches and maintains the specific temperature required for the chemical vapor deposition process, thereby realizing chemical vapor deposition.

[0041] Placing the heater 33 outside the reaction device 11 and adjacent to the heat insulation layer 32 can improve the thermal efficiency. The heat insulation layer 32 helps to reduce heat loss, enabling most of the heat generated by the heater 33 to be effectively utilized to heat the reaction chamber 101, rather than being dissipated into the surrounding environment. Compared with the direct contact heating method (i.e., placing the heater 33 inside the reaction chamber 101), this indirect heating method can provide higher safety and reliability, reduce the risk of damage to the reaction device 11 caused by high temperature, and improve the safety and stability during the operation of the chemical vapor deposition apparatus 100.

[0042] According to some embodiments of the present invention, the chemical vapor deposition apparatus 100 further includes: a first pipeline 24 and a second pipeline 25. One end of the first pipeline 24 is communicated with the sublimation chamber 201, the first pipeline 24 extends in a direction parallel to the connection surface, and the first pipeline 24 is configured as multiple; one end of the second pipeline 25 is communicated with the first pipeline 24, the other end of the second pipeline 25 is communicated with the reaction chamber 101, the second pipeline 25 extends in a direction perpendicular to the connection surface, and the second pipeline 25 is configured as multiple and arranged in one-to-one correspondence with the first pipeline 24.

[0043] In some specific embodiments, a first pipeline 24 and a second pipeline 25 are further provided inside the chemical vapor deposition apparatus 100. The first pipeline 24 is communicated with the sublimation chamber 201, one end of the second pipeline 25 is communicated with the first pipeline 24, and the other end of the second pipeline 25 is communicated with the reaction chamber 101, thereby realizing the gas flow between the reaction chamber 101 and the sublimation chamber 201. The first pipeline 24 extends in a direction parallel to the connection surface, the second pipeline 25 extends in a direction perpendicular to the connection surface, and the first pipeline 24 and the second pipeline 25 are configured as multiple and arranged in one-to-one correspondence. By providing multiple first pipelines 24 and second pipelines 25, gas can enter the reaction chamber 101 from multiple paths, thereby realizing a more uniform distribution of gas in the reaction chamber 101. Moreover, the design of multiple pipelines can avoid too high or too low local gas concentration in the reaction chamber 101 caused by a single gas inlet, and improve the uniformity of the deposited film.

[0044] In the description of the present invention, it should be understood that the orientation or positional relationship indicated by the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", 5 "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation to the present invention.

[0045] In the description of the present utility model, the "first feature" and the "second feature" may include one or more of such features. In the description of the present utility model, the meaning of "a plurality of" is two or more.

[0046] In the description of the present utility model, the first feature being "above" or "below" the second feature may include the first and second features being in direct contact, or may include the first and second features not being in direct contact but being in contact through additional features therebetween.

[0047] In the description of the present utility model, the first feature being "above", "over" and "on" the second feature includes the first feature being directly above and obliquely above the second feature, or merely indicating that the first feature has a higher horizontal height than the second feature.

[0048] In the description of this specification, the description with reference to terms such as "one embodiment", "some embodiments", "schematic embodiments", "examples", "specific examples", or "some examples", etc. means that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present utility model.

[0049] In this specification, the schematic expressions of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described may be combined in a suitable manner in any one or more embodiments or examples.

[0050] Although the embodiments of the present utility model have been shown and described, those of ordinary skill in the art can understand that various changes, modifications, substitutions, and variations can be made to these embodiments without departing from the principles and spirit of the present utility model, and the scope of the present utility model is defined by the claims and their equivalents.

Claims

1. A vapor deposition apparatus, characterized in that, Comprising: A reaction device (11), a reaction chamber (101) is formed inside the reaction device (11), and an inlet of the reaction chamber (101) is further provided on the reaction device (11); A sublimation device (21), the sublimation device (21) and the reaction device (11) are constructed as an integral structure, a connecting surface that fits the reaction device (11) is formed on the sublimation device (21), a sublimation chamber (201) that communicates with the reaction chamber (101) is formed inside the sublimation device (21), an outlet of the sublimation chamber (201) is formed on the connecting surface, and the gas in the sublimation chamber (201) flows from the outlet of the sublimation chamber (201) towards the inlet of the reaction chamber (101).

2. The vapor deposition apparatus according to claim 1, wherein, Further comprising: An outer housing (31), a receiving cavity (301) for receiving the reaction device (11) and the sublimation device (21) is formed inside the outer housing, an air inlet communicating with the sublimation chamber (201) and an air outlet communicating with the reaction chamber (101) are formed on the outer housing (31).

3. The gas deposition device according to claim 2, characterized in that, The sublimation device (21) includes: A sublimation housing, a sublimation chamber (201) is formed inside the sublimation housing; A partition (22), the partition (22) is disposed inside the sublimation chamber (201), through holes (203) penetrating in the thickness direction are formed on the partition (22), and the through holes (203) are configured as a plurality of spaced-apart ones in the length direction of the partition (22); A feed pipe (23), the feed pipe (23) passes through the air inlet and communicates with the sublimation chamber (201), and the feed pipe (23) is adapted to output a substance to be sublimated into the sublimation chamber (201).

4. The gas deposition apparatus according to claim 3, wherein An open slot (202) is formed on a side of the sublimation housing away from the connecting surface, and at least part of the feed pipe (23) is received in the open slot (202).

5. The vapor deposition apparatus according to claim 3, characterized in that, The partition (22) is configured as a plurality of spaced-apart ones inside the reaction chamber (101).

6. The vapor deposition apparatus according to claim 1, wherein Comprising: A heat-insulating layer (32), the heat-insulating layer (32) is attached to at least part of the outer perimeters of the reaction device (11) and the sublimation device (21).

7. The vapor deposition apparatus according to claim 6, wherein, Heat-conducting holes (302) are formed on the heat-insulating layer (32) attached to the connecting surface.

8. The vapor deposition apparatus according to claim 7, wherein, The heat-conducting holes (302) are configured as a plurality of micro-holes arranged at intervals.

9. The vapor deposition apparatus according to claim 6, wherein, Further comprising: A heater (33), the heater (33) is disposed on the reaction device (11) and located between the outer surface of the reaction device (11) and the heat-insulating layer (32), and the heater (33) is used to heat the reaction device (11).

10. The vapor deposition apparatus according to claim 1, characterized in that, Further comprising: A first pipeline (24), one end of the first pipeline (24) communicates with the sublimation chamber (201), the first pipeline (24) extends in a direction parallel to the connecting surface, and the first pipeline (24) is configured as a plurality of ones; A second pipeline (25), one end of the second pipeline (25) is communicated with the first pipeline (24), the other end of the second pipeline (25) is communicated with the reaction chamber (101), the second pipeline (25) extends in a direction perpendicular to the connection surface, and the second pipeline (25) is configured to be multiple pipelines arranged in one-to-one correspondence with the first pipeline (24).

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