Semiconductor element bearing structure
Through the semiconductor element bearing structure integrating electrode columns, heating plates and support columns, the problems of low space utilization and high design complexity caused by the separation of the semiconductor wafer heating structure and support structure are solved, and the simplification of space utilization and functional integration is achieved.
Patent Information
- Application Number
- CN202422378600.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-29
- Publication Date
- 2025-07-29
- Estimated Expiration
- 2034-09-29
AI Technical Summary
In the prior art, the separation of the semiconductor wafer heating structure and the support structure leads to low space utilization and complex structure of the equipment, especially when the cavity space is limited, which increases the design complexity.
The semiconductor element bearing structure adopts an integrated design, including an electrode column arranged vertically, a heating plate installed vertically, an insulated supporting column and a support plate used to support the semiconductor element, an integrated heating function is included, and a separate support structure is omitted.
It realizes effective use of space, simplifies design, reduces equipment complexity, and has heating function without additional heating measures.
Smart Images
Figure CN223168432U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of semiconductor processing, and particularly to a semiconductor element bearing structure. Background Art
[0002] In the thin film deposition or oxidation process of a semiconductor wafer, the semiconductor wafer is usually placed in a reaction chamber, heated to a certain temperature and subjected to corresponding reactions or treatments under a certain air pressure. For the heating method, there are induction heating, resistance heating and thermal radiation heating methods. Among them, the resistance method mainly connects a resistor in series between electrodes, and converts electrical energy into heat energy through the resistor, so that the semiconductor wafer in the reaction chamber is maintained at a certain temperature.
[0003] At the same time, for a silicon carbide crystal or wafer, in order to eliminate lattice defects, a high-temperature annealing treatment is also required, that is, the silicon carbide crystal or wafer needs to be heated to above 1500 °C and maintained for a certain time, which can also adopt the resistance heating method.
[0004] If the resistance heating method is adopted, the industry usually sets the heating structure and the wafer support structure as two independent structures, which will lead to the problems of low utilization rate of the internal space of the equipment and complex structure. Especially in the case of limited cavity space, designing two sets of structures separately will further increase the design complexity and is not conducive to reducing the overall cost of the equipment. Summary of the Utility Model
[0005] In view of the above-mentioned disadvantages of the prior art, the purpose of the present utility model is to provide a semiconductor element bearing structure that does not require a separate support structure and has a heating function.
[0006] A semiconductor element bearing structure includes:
[0007] Two groups of electrode columns arranged vertically;
[0008] A heating plate vertically installed between the two groups of electrode columns;
[0009] Support columns insulated and connected to the corresponding electrode columns; and;
[0010] A support plate for supporting semiconductor elements, which is fixedly installed between the two groups of support columns.
[0011] In one embodiment, the heating plate is fixed to the electrode heads of the electrode columns.
[0012] In one embodiment, there are multiple groups of heating plates, which are parallelly distributed in the vertical direction, and the heating plates are graphite plates.
[0013] Further, the support columns are located in front of the electrode heads of the electrode columns.
[0014] Furthermore, the support plate and the heating plate are arranged in parallel, and multiple groups of support plates are provided.
[0015] Furthermore, the support plates are spaced apart and distributed between the heating plates.
[0016] In one embodiment, a plurality of through holes are formed through the support plate, and the plurality of through holes are evenly distributed.
[0017] Compared with the prior art, the beneficial effects of the present utility model are as follows: It is an integrated design, eliminating the need for a separate support structure, effectively utilizing space, having a heating function, good functional integration, eliminating the need for additional heating measures, and reducing the design complexity. BRIEF DESCRIPTION OF THE DRAWINGS
[0018] In order to more clearly illustrate the embodiments of the present utility model or the technical solutions in the prior art, the following will briefly introduce the drawings required for the description of the embodiments or the prior art. Obviously, the drawings in the following description are only exemplary, and for those of ordinary skill in the art, without creative efforts, other implementation drawings can also be obtained based on the provided drawings.
[0019] The structures, ratios, sizes, etc. illustrated in this specification are only used to cooperate with the content disclosed in the specification for those skilled in this technology to understand and read, and are not used to limit the limited conditions for the implementation of the present utility model. Therefore, they do not have technical essence. Any modification of the structure, change of the proportional relationship, or adjustment of the size, without affecting the effects that the present utility model can produce and the purposes that can be achieved, should still fall within the scope that the technical content disclosed by the present utility model can cover.
[0020] Figure 1 Shown is a schematic structural diagram of a semiconductor element carrier structure provided by the present utility model.
[0021] Figure 2 Shown as Figure 1 the top view of
[0022] Figure 3 Shown as Figure 2 the exploded view of
[0023] MAIN ELEMENT SYMBOL DESCRIPTION
[0024] 1. Electrode post; 2. Heating plate; 3. Support plate; 4. Support post.
[0025] The above main element symbol description further elaborates the present utility model in combination with the drawings and specific embodiments. DETAILED DESCRIPTION OF THE EMBODIMENTS
[0026] The following specific embodiments illustrate the implementation manners of the present utility model. Those skilled in the art can easily understand the other advantages and effects of the present utility model from the content disclosed in this specification. Obviously, the described embodiments are part of the embodiments of the present utility model, rather than all embodiments. Based on the embodiments in the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present utility model.
[0027] Please refer to Figures 1-3 , this embodiment provides a semiconductor element carrying structure, which includes two groups of electrode columns 1 arranged vertically, a heating plate 2 vertically installed between the two groups of electrode columns 1, a support plate 3 for supporting semiconductor elements, and support columns 4 insulatingly connected to the corresponding electrode columns 1.
[0028] The two groups of electrode columns 1 are horizontally distributed. The heating plate 2 is provided with multiple groups (four groups in this embodiment), the multiple groups of heating plates 2 are vertically parallelly distributed, and the heating plate 2 is a graphite plate, and the heating plate 2 is fixed to the electrode heads of the electrode columns 1.
[0029] The support columns 4 are located in front of the electrode heads of the electrode columns 1, the support plate 3 is fixedly installed between the two support columns 4, the support plate 3 is parallel to the heating plate 2, and the support plate 3 is provided with multiple groups (three groups in this embodiment), and the support plates 3 are spaced apart and distributed between the heating plates 2. A plurality of through holes are formed through the support plate 3, and the plurality of through holes are evenly distributed to facilitate the circulation of heat based on the through holes.
[0030] The semiconductor element carrying structure of this embodiment adopts a design in which the electrode columns 1, the heating plate 2, the support plate 3, and the support columns 4 are combined into one body. There is no need to set up a separate support structure, and the space can be effectively utilized. While the carrying structure supports the semiconductor elements, it also has a heating function, with good function integration, and there is no need to set up another heating measure, saving space. This embodiment takes the use of a graphite plate as the heating plate 2 as an example for illustration. The heating plate 2 is heated by means of resistance heating equivalent to resistance heating. The semiconductor elements are placed on the support plate 3. This embodiment takes the setting of three support plates 3 as an example for illustration. In other embodiments, according to actual processing requirements, the number of support plates 3 can be adaptively increased or decreased to accommodate the required number of semiconductor elements, which will not be elaborated here. The semiconductor elements therein can be silicon carbide crystals, wafers or substrates.
[0031] In particular, the semiconductor element carrier structure of this embodiment can be applied to the annealing process of silicon carbide crystals or wafers. Since silicon carbide has advantages such as a large bandgap width, high thermal conductivity, high breakdown electric field strength, high saturated electron mobility, and good chemical stability, it is the preferred semiconductor material for fabricating high-performance power electronic devices. During the production process, it is necessary to anneal silicon carbide crystals or wafers, and the crystal or wafer carrier structure is an important part of this process. The semiconductor element carrier structure of this embodiment combines a heating structure and a support structure, with a simple structure and easy implementation. Of course, this structure can also be applied to processes such as semiconductor wafer thin film deposition and oxidation.
[0032] In summary, the semiconductor element carrier structure of this embodiment has the following advantages: it is an integrated design, eliminating the need for a separate support structure, effectively utilizing space, having a heating function, good functional integration, eliminating the need for additional heating measures, and reducing the design complexity.
[0033] For the naming of each component involved, the function described in the specification is used as the naming standard, regardless of the specific nouns used in this utility model. Those skilled in the art can also choose other nouns to describe the names of the various components of this utility model.
Claims
1. A semiconductor component carrier structure, characterized in that, Including: Two sets of electrode columns (1) arranged vertically; A heating plate (2), which is vertically installed between the two sets of electrode columns (1); Support columns (4) insulated and connected to the corresponding electrode columns (1); and A support plate (3) for supporting semiconductor components, which is fixedly installed between the two sets of support columns (4).
2. The semiconductor element carrier structure according to claim 1, wherein The heating plate (2) is fixed to the electrode heads of the electrode columns (1).
3. The semiconductor element carrier structure according to claim 1, wherein, There are multiple sets of the heating plates (2), which are parallelly distributed in the vertical direction, and the heating plates (2) are graphite plates.
4. The semiconductor element carrier structure according to claim 3, wherein, The support columns (4) are located in front of the electrode heads of the electrode columns (1).
5. A semiconductor component carrier structure according to claim 4, wherein, The support plate (3) is arranged parallel to the heating plate (2), and there are multiple sets of the support plates (3).
6. The semiconductor element carrier structure according to claim 5, characterized in that, The support plates (3) are spaced apart and distributed between the heating plates (2).
7. A semiconductor element carrier structure according to claim 1, characterized in that, A plurality of through holes are formed through the support plate (3), and the plurality of through holes are evenly distributed.