Gas control structure

Abstract

The utility model provides a gas control structure, and belongs to the technical field of semiconductors, the gas control structure comprises: a first gas inlet pipeline, the first gas inlet pipeline is provided with a first flow control structure for controlling the flow of a process gas introduced into the first gas inlet pipeline; the second gas inlet pipeline is provided with a second flow control structure which is used for controlling the flow of the ion gas introduced into the second gas inlet pipeline; and an air outlet of the first air inlet pipeline and an air outlet of the second air inlet pipeline are respectively connected with an inlet of an RPS device. According to the gas circuit structure, the gas circuit structure is divided into the two independent gas inlet pipelines, the structure is simple, maintenance and overhaul are convenient, and the production efficiency and the production quality are effectively improved.

Description

Technical Field

[0001] The present disclosure belongs to the field of semiconductor technology, and particularly relates to a gas control structure. Background Art

[0002] In the process flow in the process chamber of a vacuum pump device, process gases, purge gases, and ion gases to be injected all converge into a reaction chamber. After the process ends, the above-mentioned various gases flow into the vacuum pump together. If there is one or several special gases among them, they will undergo chemical reactions under specific circumstances, generating toxic and harmful gases, liquids, or solids, corroding the equipment or jamming the vacuum pump, affecting the operation efficiency and production quality of the equipment.

[0003] Therefore, in the process flow of the above-mentioned process chamber, multiple aspects such as gas transportation, gas flow rate, gas purity, and safety control need to be considered to ensure the accuracy, stability, and safety of the process. However, in the current process, the process gas pipeline and the ion gas pipeline are controlled by an overall gas control structure, or introduced by a single inlet pipeline to introduce multiple gases and then divided into two inlet branches respectively. The pipeline control process of the above structure is complex and not convenient for individually controlling each gas. At the same time, after the gas control structure operates with continuous ventilation for a long time, substances or dust generated by chemical reactions may also cause blockages in the gas pipeline or devices, resulting in measurement errors. Moreover, the pipeline of the above structure is complex and it is difficult to locate the blockage point, which is not convenient for maintenance and repair. Summary of the Utility Model

[0004] The present disclosure aims to at least solve one of the technical problems existing in the prior art, and provides a gas control structure.

[0005] The present disclosure provides a gas control structure, including:

[0006] A first inlet pipeline, on which a first flow control structure is provided for controlling the flow rate of the process gas introduced into the first inlet pipeline;

[0007] A second inlet pipeline, on which a second flow control structure is provided for controlling the flow rate of the ion gas introduced into the second inlet pipeline;

[0008] The outlet of the first inlet pipeline and the outlet of the second inlet pipeline are respectively connected to the inlet of the RPS device.

[0009] Optionally, the first flow control structure includes a first inlet flow control valve, a first flow meter, and a first pressure regulating valve arranged in sequence along the flowing direction of the process gas; wherein,

[0010] The first intake flow control valve is used to adjust the intake flow rate of the process gas;

[0011] The first flowmeter is used to measure the gas flow rate in the first intake pipeline;

[0012] The first pressure regulating valve is used to adjust the intake flow rate of the process gas and the gas pressure in the first intake pipeline according to the measured gas flow rate.

[0013] Optionally, the second flow control structure includes a second intake flow control valve, a second flowmeter, and a second pressure regulating valve arranged in sequence along the ion gas flow direction; wherein,

[0014] The second intake flow control valve is used to adjust the intake flow rate of the ion gas;

[0015] The second flowmeter is used to measure the gas flow rate in the second intake pipeline;

[0016] The second pressure regulating valve is used to adjust the intake flow rate of the ion gas and the gas pressure in the second intake pipeline according to the measured gas flow rate.

[0017] Optionally, the first intake flow control valve and the second intake flow control valve adopt an intake ratio valve.

[0018] Optionally, a first standby intake pipeline is further arranged on the first intake pipeline, and the intake end and the exhaust end of the first standby intake pipeline are respectively located on both sides of the first flow control structure to be opened when the first flow control structure fails.

[0019] Optionally, a first control valve is arranged on the first standby intake pipeline.

[0020] Optionally, a second standby intake pipeline is further arranged on the second intake pipeline, and the intake end and the exhaust end of the second standby intake pipeline are respectively located on both sides of the second flow control structure to be opened when the second flow control structure fails.

[0021] Optionally, a second control valve is arranged on the second standby intake pipeline.

[0022] Optionally, a third control valve is arranged on the connecting pipeline between the outlet of the RPS device and the vacuum pump.

[0023] Optionally, the first intake pipeline is provided with a first intake port for introducing the process gas and a second intake port for introducing the purge gas;

[0024] The second intake pipeline is provided with a third intake port for introducing the ion gas and a fourth intake port for introducing the purge gas.

[0025] The present disclosure provides a gas control structure, including: a first intake pipeline, on which a first flow control structure is provided for controlling the flow rate of the process gas introduced into the first intake pipeline; a second intake pipeline, on which a second flow control structure is provided for controlling the flow rate of the ion gas introduced into the second intake pipeline; the outlet of the first intake pipeline and the outlet of the second intake pipeline are respectively connected to the inlet of the RPS device. The present disclosure splits the gas pipeline structure into two separate intake pipelines, with a simple structure, facilitating maintenance and repair. At the same time, it improves the stability and reliability of gas flow control. When used in the process flow of a vacuum pump device, it can improve the operating efficiency of the vacuum pump device, thereby improving production efficiency and production quality. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 is a schematic structural diagram of the gas control structure according to an embodiment of the present disclosure;

[0027] Figure 2 is a schematic working process diagram of the gas control structure according to another embodiment of the present disclosure. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0028] To enable those skilled in the art to better understand the technical solutions of the present disclosure, the present disclosure will be further described in detail below in conjunction with the drawings and specific embodiments. It should be understood that the specific embodiments described herein are only used to explain the present disclosure, which are a part of the embodiments of the present disclosure, rather than all of the embodiments. Based on the embodiments of the present disclosure, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present disclosure.

[0029] In some descriptions of the present disclosure, terms such as "include" or "comprise" etc. neither limit the mentioned shapes, numbers, steps, actions, operations, components, elements and / or their groups, nor exclude the appearance or addition of one or more other different shapes, numbers, steps, actions, operations, components, elements and / or their groups.

[0030] In some descriptions of the present disclosure, terms such as "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity and order of the indicated technical features.

[0031] In some descriptions of the present disclosure, terms such as "install", "connect", "couple" or "fix" etc. similar words are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirectly through an intermediate medium, and may be the internal communication of two components or the interaction relationship between two components.

[0032] Such asFigure 1 As shown in Figure 1 , the present disclosure provides a gas control structure 100, including: a first intake pipeline 110 and a second intake pipeline 120. Among them, a first flow control structure is provided on the first intake pipeline 110 for controlling the flow rate of the process gas introduced into the first intake pipeline 110; a second flow control structure is provided on the second intake pipeline 120 for controlling the flow rate of the ion gas introduced into the second intake pipeline 120; the outlet of the first intake pipeline 110 and the outlet of the second intake pipeline 120 are respectively connected to the inlet of the RPS device 130.

[0033] In this embodiment, by providing two separate intake pipelines and separately providing gas flow control structures on each intake pipeline, separate control of each gas is achieved, without the need to set up complex pipeline structures such as a single intake pipeline and multiple branch pipelines, greatly simplifying the control loop, effectively improving the control efficiency of the gas, enhancing the stability and reliability of gas flow control, and at the same time facilitating maintenance and repair.

[0034] It should be understood that the gas control structure of this embodiment can be used in semiconductor manufacturing, for example, in processes such as cleaning and drying, gas mixing, and deposition. In these processes, a vacuum pump is used to provide a necessary vacuum environment and clean process conditions for the semiconductor manufacturing process to ensure the stability of the process and the quality of the product. When the gas control structure is used in the process of the vacuum pump, the first intake pipeline is mainly used to introduce the process gas Ar, and the second intake pipeline is mainly used to introduce the ion gas NF3. At the same time, based on the flow control structures provided on the two intake pipelines, the amount of gas entering the RPS device can be controlled, and the respective gases are converged into the RPS startup device (remote plasma source, i.e., the device that generates plasma) through the two intake pipelines. This device starts to generate a high-frequency or radio-frequency electric field, causing gas molecules to ionize and generate plasma, and this plasma enters the vacuum pump to maintain a low-pressure environment in the vacuum pump chamber, discharge reaction by-products and residual gases, thereby reducing the gas pressure in the vacuum chamber to reach the required vacuum degree, effectively improving the operating efficiency of the equipment. Of course, after the process is completed, the first intake pipeline and the second intake pipeline can also be used to introduce purge gas, for example, nitrogen, etc. When introducing the purge gas, there is no need to control the flow rate of the gas, and the purge gas can be directly sent into the device and equipment to purge the device and equipment.

[0035] It should be noted that in this embodiment, the first flow control structure and the second flow control structure are not specifically limited, as long as separate control of the two intake pipelines can be achieved. At the same time, an intake port for introducing the process gas and an intake port for introducing the purge gas are provided on the first intake pipeline, and an intake port for the ion process gas and an intake port for introducing the purge gas are provided on the second intake pipeline.

[0036] In some preferred embodiments, as Figure 1 shown, the first flow control structure includes a first air inlet 111, a first intake air flow control valve 112, a first flowmeter 113, and a first pressure regulating valve 114 that are arranged in sequence along the process gas flow direction on the first intake pipe 110; wherein, the first air inlet 111 is used to introduce the process gas, and the first intake air flow control valve 112 is used to adjust the intake air flow rate of the process gas; the first flowmeter 113 is used to measure the gas flow rate in the first intake pipe 110, that is, to detect the gas flow rate in real time; the first pressure regulating valve 114 is used to adjust the intake air flow rate of the process gas and the gas pressure in the first intake pipe 110 according to the measured gas flow rate. That is to say, the first intake air flow control valve is located at a position close to the air inlet of the first intake pipe 110 and is used to control the intake air flow rate of the process gas, and the first pressure regulating valve is located between the first flowmeter and the RPS device and is used to adjust the intake air flow rate in real time according to the detected actual pressure to maintain the pressure in the first intake pipe in balance.

[0037] Furthermore, in some other preferred embodiments, as Figure 1 shown, the first intake pipe 110 is further provided with a first standby intake pipe 115, and the air inlet and the air outlet of the first standby intake pipe 115 are respectively located on both sides of the first flow control structure, that is, the air inlet of the first standby intake pipe 115 is located on the left side of the first intake air flow control valve 112, and the air outlet of the first standby intake pipe 115 is located on the right side of the first pressure regulating valve 114, so as to serve as a standby pipe, which is usually in a closed state and is opened when the first flow control structure fails, facilitating the detection and maintenance of the first intake air flow control valve 112, the first flowmeter 113, and the first pressure regulating valve 114.

[0038] Even further, in other preferred embodiments, as Figure 1 shown, a first control valve 115a is provided on the first standby intake pipe 115 to control the on-off of the first standby intake pipe 115. When the first intake pipe 110 is operating normally, the first control valve 115a is closed, and when a fault occurs in the first flow control structure on the first intake pipe 110, the first control valve 115a is opened.

[0039] Even further, a second air inlet 116 is provided on the first intake pipe 110, and the second air inlet 116 is used to introduce purge gas.

[0040] Similarly, as Figure 1As shown in the figure, the second flow control structure includes a third air inlet 121, a second air inlet flow control valve 122, a second flowmeter 123, and a second pressure regulating valve 124 that are arranged in sequence along the ion gas flow direction on the second intake air pipeline 120; among them, the third air inlet 121 is used to introduce ion gas, and the second air inlet flow control valve 122 is used to adjust the intake air flow rate of the ion gas; the second flowmeter 123 is used to measure the gas flow rate in the second intake air pipeline 120; the second pressure regulating valve 124 is located at the outlet position of the second intake air pipeline 120 and is used to adjust the intake air flow rate of the ion gas and the gas pressure in the second intake air pipeline 120 according to the measured gas flow rate.

[0041] It should be noted that the types of the first intake air flow control valve and the second intake air flow control valve are not specifically limited in this embodiment, as long as the control of the gas flow rate can be achieved. For example, the first intake air flow control valve and the second intake air flow control valve adopt intake proportional valves, and the intake proportional valves are installed at the air inlets of each intake air pipeline to control the flow rate of the introduced gas.

[0042] Furthermore, as Figure 1 shown in the figure, the second intake air pipeline 120 is also provided with a second standby intake air pipeline 125. The air inlet and outlet of the second standby intake air pipeline 125 are respectively located on both sides of the second flow control structure. That is, the air inlet of the second standby intake air pipeline 125 is located on the left side of the second intake air flow control valve 122, and the air outlet of the second standby intake air pipeline 125 is located on the right side of the second pressure regulating valve 124, so as to be opened when the second flow control structure fails, facilitating the detection and maintenance of the second intake air flow control valve 122, the second flowmeter 123, and the second pressure regulating valve 124.

[0043] Even further, as Figure 1 shown in the figure, a second control valve 125a is provided on the second standby intake air pipeline 125 to control the on-off of the second standby intake air pipeline 125.

[0044] Even further, a fourth air inlet 126 is provided in the second intake air pipeline 120, and the fourth air inlet 126 is also used to introduce purge gas.

[0045] Even further, as Figure 1 shown in the figure, a third control valve 140 is provided on the connecting pipeline between the outlet of the RPS device 130 and the vacuum pump.

[0046] It should be further noted that the first control valve, the second control valve, and the third control valve can all adopt pneumatic diaphragm valves, which have a simple structure, good sealing performance, and are convenient for maintenance.

[0047] As Figure 1As shown in the figure, based on the above control structure, its operation process is as follows: First, open the first intake flow control valve 112, the first flowmeter 113, and the first pressure regulating valve 114 on the first intake pipeline 110. The process gas enters the RPS device 130 through the first intake pipeline 110. When the flow rate of the process gas is greater than the set value, the RPS device 130 ignites and starts. After that, open the second intake flow control valve 122, the second flowmeter 123, and the second pressure regulating valve 124 on the second intake pipeline 120. The ion gas enters the RPS device 130 through the second intake pipeline 120. In this way, the process gas and the ion gas are mixed to generate plasma. After the process is completed, purge gas is introduced through the second intake port 116 on the first intake pipeline 110 and the fourth intake port 126 of the second intake pipeline 120 to purge the device and equipment.

[0048] The gas control structure will be further described below with specific embodiments:

[0049] Embodiment 1

[0050] As Figure 1 As shown in the figure, the gas control structure 100 includes two separately provided first intake pipelines 110 and second intake pipelines 120. The outlets of these two intake pipelines are respectively connected to the inlet of the RPS device 130, and the outlet of the RPS device 130 is connected to a vacuum pump. A third control valve 140 is provided on the connecting pipeline, and this control valve is a pneumatic diaphragm valve.

[0051] Among them, along the gas flow direction on the first intake pipeline 110, a first intake port 111, a first intake flow control valve 112, a first flowmeter 113, and a first pressure regulating valve 114 are sequentially arranged; the first intake pipeline 110 is an argon intake pipeline. Correspondingly, the first intake port 111 is used to introduce argon, the first intake flow control valve 112 is an argon proportional valve, the first flowmeter 113 is an argon flowmeter, and the first pressure regulating valve 114 is an argon pressure regulating valve. In addition, a first standby intake pipeline 115 is also provided on the first intake pipeline 110, and a first control valve 115a is provided on this first standby intake pipeline 115, and this first control valve is a pneumatic diaphragm valve. In addition, a second intake port 116 is also provided on the first intake pipeline 110 for introducing purge gas.

[0052] Among them, a third air inlet 121, a second air inlet flow control valve 122, a second flowmeter 123, and a second pressure regulating valve 124 are sequentially arranged on the second air inlet pipeline 120 along the gas flow direction; the second air inlet pipeline 120 is a nitrogen trifluoride air inlet pipeline. Correspondingly, the third air inlet 121 is used to introduce nitrogen trifluoride, the second air inlet flow control valve 122 is a nitrogen trifluoride air inlet proportional valve, the second flowmeter 123 is a nitrogen trifluoride flowmeter, and the second pressure regulating valve 124 is a nitrogen trifluoride pressure regulating valve. In addition, a second standby air inlet pipeline 125 is further arranged on the second air inlet pipeline 120, and a second control valve 125a is arranged on the second standby air inlet pipeline 125. The second control valve is a pneumatic diaphragm valve. In addition, a fourth air inlet 126 is further arranged on the second air inlet pipeline 120 for introducing purge gas.

[0053] Based on the above structure, please refer to the Figure 2 for its working process. When the first air inlet pipeline and the second air inlet pipeline are in normal operation, the first standby air inlet pipeline and the second standby air inlet pipeline are in the closed state, that is, the corresponding first control valve and second control valve are closed. At the beginning of the manufacturing process, the second air inlet and the fourth air inlet are closed. First, the first air inlet is opened to introduce argon gas. The argon gas enters the RPS device through the first air inlet pipeline. In the first air inlet pipeline, the argon gas flow rate is controlled by the argon gas proportional valve, the gas flow in the first air inlet pipeline is measured by the argon gas flowmeter, and the argon gas pressure regulating valve is used to control the argon gas flow rate and gas pressure. When the argon gas flow rate is greater than the set value, the RPS device ignites and starts. Of course, when the argon gas flow rate does not reach the set value, the argon gas proportional valve and the argon gas pressure regulating valve need to be used to further adjust the argon gas inlet flow rate until the pressure flow rate reaches the set value.

[0054] Furthermore, please continue to refer to the Figure 2 and open the third air inlet to start introducing nitrogen trifluoride. That is, in the second air inlet pipeline, the nitrogen trifluoride flow rate is controlled by the nitrogen trifluoride proportional valve, the nitrogen trifluoride flowmeter is used to measure the gas flow in the second air inlet pipeline, the nitrogen trifluoride pressure regulating valve controls the nitrogen trifluoride gas flow rate and pressure, and the nitrogen trifluoride enters the RPS device through the second air inlet pipeline. The RPS device starts to work to generate plasma, and the manufacturing process ends.

[0055] Even further, please continue to refer to the Figure 2 and after the manufacturing process ends, close the first air inlet and the third air inlet, open the second air inlet and the fourth air inlet, and introduce nitrogen gas through the second air inlet of the first air inlet pipeline and the fourth air inlet of the second air inlet pipeline to purge the device and equipment. Of course, when the manufacturing process has not ended, it is also necessary to further introduce nitrogen trifluoride to continue the manufacturing process.

[0056] It should be understood that when the first intake air flow control valve, the first flow meter, and the first pressure regulating valve on the first intake air pipeline fail, close each valve, detect and repair the faulty valve, and at the same time open the first control valve on the first standby intake air pipeline to continue flowing argon into the RPS device from the first standby intake air pipeline. Similarly, when the second intake air flow control valve, the second flow meter, and the second pressure regulating valve on the second intake air pipeline fail, close each valve, detect and repair each valve, and at the same time open the second control valve on the second standby intake air pipeline to continue flowing nitrogen trifluoride into the RPS device from the second standby intake air pipeline, so that each device and equipment can operate normally, and at the same time detect and repair the faulty valve.

[0057] The present disclosure provides a gas control structure, which has the following beneficial effects compared with the prior art:

[0058] First, by splitting the gas path structure into two independent intake air pipelines and setting a separate flow control structure on each intake air pipeline, it is convenient to control the gas, improve the stability and reliability of gas flow control, and at the same time facilitate maintenance and repair, improving the production efficiency and product quality of the vacuum pump;

[0059] Second, by adding a standby intake air pipeline to each intake air pipeline, it helps to improve the operation efficiency of the equipment, improve the efficiency of maintenance and repair, and save maintenance time;

[0060] Third, the structure of the present disclosure is simple and convenient for installation and maintenance.

[0061] It can be understood that the above embodiments are only exemplary embodiments adopted to illustrate the principle of the present disclosure. However, the present disclosure is not limited thereto. For those of ordinary skill in the art, various modifications and improvements can be made without departing from the spirit and essence of the present disclosure, and these modifications and improvements are also regarded as the protection scope of the present disclosure.

Claims

1. A gas control structure, characterized in that, Comprising: A first intake pipeline, on which a first flow control structure is provided for controlling the flow rate of the process gas introduced into the first intake pipeline; A second intake pipeline, on which a second flow control structure is provided for controlling the flow rate of the ion gas introduced into the second intake pipeline; The outlet of the first intake pipeline and the outlet of the second intake pipeline are respectively connected to the inlet of the RPS device.

2. The gas control structure according to claim 1, wherein, The first flow control structure includes a first intake flow control valve, a first flowmeter, and a first pressure regulating valve arranged in sequence along the flow direction of the process gas; wherein, The first intake flow control valve is used to adjust the intake flow rate of the process gas; The first flowmeter is used to measure the gas flow rate in the first intake pipeline; The first pressure regulating valve is used to adjust the intake flow rate of the process gas and the gas pressure in the first intake pipeline according to the measured gas flow rate.

3. The gas control structure according to claim 1, characterized in that, The second flow control structure includes a second intake flow control valve, a second flowmeter, and a second pressure regulating valve arranged in sequence along the flow direction of the ion gas; wherein, The second intake flow control valve is used to adjust the intake flow rate of the ion gas; The second flowmeter is used to measure the gas flow rate in the second intake pipeline; The second pressure regulating valve is used to adjust the intake flow rate of the ion gas and the gas pressure in the second intake pipeline according to the measured gas flow rate.

4. The gas control structure according to claim 2 or 3, characterized in that, The first intake flow control valve and the second intake flow control valve adopt intake proportional valves.

5. The gas control structure according to claim 1, characterized in that, A first standby intake pipeline is further provided on the first intake pipeline, and the inlet and outlet of the first standby intake pipeline are respectively located on both sides of the first flow control structure to be opened when the first flow control structure fails.

6. The gas control structure according to claim 5, characterized in that, A first control valve is provided on the first standby intake pipeline.

7. The gas control structure according to claim 1, wherein A second standby intake pipeline is further provided on the second intake pipeline, and the inlet and outlet of the second standby intake pipeline are respectively located on both sides of the second flow control structure to be opened when the second flow control structure fails.

8. The gas control structure according to claim 7, wherein A second control valve is provided on the second standby intake pipeline.

9. The gas control structure according to claim 1, characterized in that, A third control valve is provided on the connecting pipeline between the outlet of the RPS device and the vacuum pump.

10. The gas control structure according to claim 1, characterized in that, The first intake pipeline is provided with a first intake port for introducing the process gas and a second intake port for introducing the purge gas; The second intake pipeline is provided with a third intake port for introducing the ion gas and a fourth intake port for introducing the purge gas.

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