Thin film assembly

Abstract

The utility model provides a thin film assembly which comprises a thin film frame, a thin film and a thin film frame. The film is supported by the film bezel, where the film includes a first densified carbon-based layer, the first densified carbon-based layer including a first image region. The film frame is adjacent to the film, the film frame including a second densified carbon-based layer, the second densified carbon-based layer including a second image region.

Description

Technical Field

[0001] This disclosure relates to a thin film component. Background Art

[0002] The semiconductor integrated circuit (IC) industry has experienced exponential growth. Technological advancements in IC materials and design have given rise to many generations of ICs, with each generation of circuits being smaller and more complex than the previous one. During the development of ICs, the functional density (i.e., the number of interconnect devices per wafer area) has generally increased, while the geometric dimensions (i.e., the smallest components (or lines) that can be created using the process) have decreased. The process of shrinking the size can generally bring advantages by increasing production efficiency and reducing related costs. This reduction in size has also increased the complexity of IC processing and manufacturing. Summary of the Utility Model

[0003] According to some embodiments of this disclosure, a thin film component is provided, including a thin film border, a thin film, and a thin film frame. The thin film is supported by the thin film border, wherein the thin film includes a first densified carbon layer, and the first densified carbon layer includes a first image area. The thin film frame is adjacent to the thin film, and the thin film frame includes a second densified carbon layer, and the second densified carbon layer includes a second image area.

[0004] According to some embodiments of this disclosure, a thin film component is provided, including a thin film border, a thin film, and a thin film frame. The thin film is supported by the thin film border, wherein the thin film includes a first densified carbon layer, and the first densified carbon layer includes a first image area. The thin film frame is located between the thin film and the thin film border. The thin film frame includes a second densified carbon layer, and the second densified carbon layer includes a second image area, wherein the width of the contact between the thin film frame and the thin film border is equal to the width of the thin film border.

[0005] According to some embodiments of this disclosure, a thin film component is provided, including a thin film border, a thin film, and a thin film frame. The thin film is supported by the thin film border, wherein the thin film includes a first densified carbon layer, and the first densified carbon layer includes a first image area. The thin film frame is located above the thin film such that the thin film is between the thin film frame and the thin film border. The thin film frame includes a second densified carbon layer, and the second densified carbon layer includes a second image area, wherein the width of the contact between the thin film frame and the thin film is greater than the width of the contact between the thin film border and the thin film. Brief Description of the Drawings

[0006] When read in conjunction with the accompanying drawings, the various aspects of this disclosure can be best understood from the following detailed description. It should be noted that, in accordance with standard industry practice, the various features are not drawn to scale. In fact, for the sake of clear discussion, the dimensions of the various features may be arbitrarily enlarged or reduced.

[0007] Figure 1is a schematic diagram of a lithography system according to some embodiments of the present disclosure;

[0008] Figure 2A and Figure 2B is a cross-sectional view of a thin-film photomask structure according to some embodiments of the present disclosure;

[0009] Figure 2C Illustrated according to some embodiments of the present disclosure Figure 2A and Figure 2B an enlarged view of a portion of the thin film and the nanotube bundle;

[0010] Figures 2D to 2G Illustrated according to some embodiments of the present disclosure Figure 2C a cross-sectional view of the nanotube bundle of the nanotube network;

[0011] Figures 3A to 3D Illustrated according to some embodiments of the present disclosure Figure 2C a cross-sectional view of other embodiments of the nanotube bundle of the nanotube network;

[0012] Figure 3E Illustrated according to some embodiments of the present disclosure is a heterostructure nanotube including a carbon-based nanotube core coated with a shell material;

[0013] Figures 4A to 4D Illustrated according to some embodiments of the present disclosure is an alternative embodiment of a thin-film assembly including a thin film, a thin-film frame, and a border;

[0014] Figure 5A and Figure 5B Illustrated according to some embodiments of the present disclosure is an exploded view of the thin-film assembly;

[0015] Figures 6A to 6D Illustrated according to some embodiments of the present disclosure is an alternative embodiment of a thin-film assembly including a thin film, a thin-film frame, and a border;

[0016] Figures 7A to 7B Illustrated according to some embodiments of the present disclosure is an exploded view of the thin-film assembly;

[0017] Figures 8A to 8G Illustrated according to some embodiments of the present disclosure are different embodiments of the cross-sectional shape of the thin-film frame located below the thin film.

[0018] Figures 9A to 9G Illustrated according to some embodiments of the present disclosure are different embodiments of the cross-sectional shape of the thin-film frame covering the thin film;

[0019] Figure 10 Illustrated according to some embodiments of the present disclosure are alternative shapes of the corners of the formed thin-film frame;

[0020] Figure 11A and Figure 11B is a flowchart of a method for manufacturing a thin film component according to some embodiments;

[0021] Figures 12A to 12H shows Figure 11A and Figure 11B the thin film component at each stage of the method;

[0022] Figure 13A and Figure 13B is a flowchart of a method for manufacturing a thin film component according to some embodiments;

[0023] Figures 14A to 14B shows Figure 13A and Figure 13B the thin film component at each stage of the method;

[0024] Figure 15A and Figure 15B is a flowchart of a method for manufacturing a thin film component according to some embodiments;

[0025] Figures 16A to 16C shows Figure 15A and Figure 15B the thin film component at each stage of the method;

[0026] Figure 17A and Figure 17B is a flowchart of a method for manufacturing a thin film component according to some embodiments;

[0027] Figures 18A to 18C shows Figure 17A and Figure 17B the thin film component at each stage of the method;

[0028] Figure 19 is a flowchart of a method for lithographically patterning a patternable layer on a semiconductor device using a thin film component formed according to embodiments of the present disclosure.

[0029]

Symbol Description

[0030] 100: Lithography system

[0031] 102: High-brightness light source

[0032] 106: Illuminator

[0033] 108: Photomask

[0034] 110: Projection optical module

[0035] 112: Substrate stage

[0036] Pellicle

[0037] 116: Semiconductor wafer

[0038] 200: Thin-film - photomask structure

[0039] 202: Mask substrate

[0040] 204: Mask pattern

[0041] 205: Image field

[0042] 206: Internal space

[0043] 210: Thin-film frame

[0044] 212: Ventilation structure

[0045] 214: Thin-film frame adhesive

[0046] 230: Thin-film component

[0047] 232: Thin film

[0048] 233: Image area

[0049] 234: Thin-film border

[0050] 235: Central area / Image area

[0051] 240: Thin-film adhesive

[0052] 242: Thin-film frame

[0053] 243: Nanotube layer / Nanotube network

[0054] 244: Nanotube bundle

[0055] 244’: Medium-sized CNT bundle

[0056] 245: Bundled nanotube structure

[0057] 245’: Large-sized CNT bundle

[0058] 246: Outer shell

[0059] 247a, 247b: Layer

[0060] 249: Second layer of shell material

[0061] 250: Heterostructure nanotube

[0062] 251: Single-walled nanotube / CNT

[0063] 252: CNT core

[0064] 253: Multi-walled nanotube / Multi-walled CNT

[0065] 254: BNNT shell

[0066] 300: Method

[0067] 302, 304, 306, 308, 310: Operations

[0068] 312, 314, 316, 318, 320: Operations

[0069] 402: Metal catalyst particles

[0070] 404: CNT

[0071] 406: BNNT

[0072] 410: Reactor

[0073] 412: First reaction zone

[0074] 414: Second reaction zone

[0075] 416: Heating element

[0076] 420: First gas supply unit

[0077] 422: First gas inlet

[0078] 430: First source material supply unit

[0079] 432: First reactant inlet

[0080] 440: Second source material supply unit

[0081] 442: Second reactant inlet

[0082] 444: Check valve

[0083] 448: Boron nitride source

[0084] 450: Second gas supply unit

[0085] 452: Second gas inlet

[0086] 460: Substrate

[0087] 460’: Substrate

[0088] 462: Filter membrane

[0089] 462’: Filter membrane

[0090] 463: Open space

[0091] 464: Support / mask

[0092] 464’: Support

[0093] 501: Opening

[0094] 503: First Dimension

[0095] 505: Second Dimension

[0096] 507: First Dimension

[0097] 509: Second Dimension

[0098] 511a, 511b, 511c, 511d: Legs

[0099] 512: Vertical Corner Shape

[0100] 513: Angular Line

[0101] 514: Tapered Corner Shape

[0102] 515: Circular Line

[0103] 516: Circular Corner Shape

[0104] 630: Reactor

[0105] 1300: Method

[0106] 1301, 1302, 1306, 1308, 1310: Operations

[0107] 1312, 1314, 1316, 1318, 1320: Operations

[0108] 1500: Method

[0109] 1501, 1502, 1506, 1508, 1510: Operations

[0110] 1512, 1514, 1516, 1518, 1520: Operations

[0111] 1700: Method

[0112] 1701, 1702, 1706, 1708, 1710: Operations

[0113] 1712, 1714, 1716, 1718, 1720: Operations

[0114] 1900: Method

[0115] 1902, 1904, 1906: Operations

[0116] W: Dimension Detailed Implementation Manner

[0117] It should be understood that the following disclosure provides many different embodiments or examples for implementing different features of the present disclosure. Specific embodiments or examples of components and configurations are described below to simplify the present disclosure. Of course, these are merely examples and are not intended to be limiting. For example, in the following description, forming the first feature on or above the second feature may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features are formed between the first and second features such that the first and second features may not be in direct contact. Additionally, the present disclosure may repeat reference numerals and / or symbols in various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and / or configurations discussed.

[0118] In addition, for ease of description, the present disclosure may use spatial relative terms, such as "below", "beneath", "lower", "above", "upper", etc., to describe the relationship of one element or feature to one or more other elements or features, as shown in the figures. Spatial relative terms are intended to cover different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may be oriented in other ways (rotated 90 degrees or in other orientations), and the spatial relative descriptors used herein may be interpreted accordingly.

[0119] In semiconductor manufacturing, various lithography processes are widely used in the process of defining device and circuit patterns. Depending on the feature size to be defined, different optical lithography processes may be used. In a lithography process, by irradiating a photomask, the pattern existing on the photomask or reticle can be transferred to a photosensitive photoresist coating. The light is modulated by the pattern of the reticle and imaged onto the wafer coated with photoresist. Generally, as the pattern becomes smaller, a shorter wavelength is used. In extreme ultraviolet (EUV) lithography, a wavelength of about 13.5 nanometers (nm) is often used to produce feature sizes less than 32 nm.

[0120] However, EUV systems employ reflective optical elements instead of traditional refractive optical elements and are thus very sensitive to contamination problems. In one example, particulate contamination introduced onto a reflective EUV mask may cause significant degradation of the lithographic transfer pattern. Therefore, it is necessary to provide a thin film on the EUV mask, which serves as a protective cover to protect the EUV mask from damage and / or contaminating particles. Additionally, in order to avoid a decrease in reflectivity, it is important to use a thin, high-transmission material as the thin film.

[0121] Carbon nanotubes (CNT) are transparent enough to limit their impact on imaging, yet strong enough to withstand handling and prevent particles from landing on the photomask, and are currently used as thin film materials for EUV lithography. However, during a large number of exposures (e.g., tens of thousands or more), carbon nanotubes are vulnerable to the hydrogen plasma environment of EUV scanners. Carbon nanotubes with a protective shell can provide high transmittance of EUV radiation.

[0122] Embodiments of the present disclosure provide a thin film assembly that includes a thin film formed of a first layer of carbon-based material and a thin film frame formed of a second layer of carbon-based material. The thin film frame includes an opening that does not contain carbon-based material. In some embodiments, the carbon-based material is a non-heterostructure nanotube, such as a carbon nanotube. In some embodiments, the carbon-based material is a heterostructure nanotube, such as a CNT coated with a shell material or a protective material (e.g., a non-carbon-based material or a carbide-based material). Examples of non-carbon-based materials include boron nitride nanotubes, or coatings or shells of nanoparticles or continuous films of MoS2, MoSe2, WS2, WSe2, SnS2, SnS, ZrO2, ZrO, TiO2 nanotubes, or SiON, SiN, Y2O3, TiO2, ZrO, RuO2, Ru, Ir, Pt, YF3, Ta, Nb, Nb2O5, Zr, Mo, MoO2, Fe, Ni, Co. In some embodiments, SiC, MoS2, MoSe2, WS2, WSe2, SnS2, SnS, ZrO2, ZrO, TiO2 nanotubes are used as EUV wavelength absorbing materials. Examples of carbide-based materials include silicon carbide nanotubes, or coatings or shells of nanoparticles or continuous films of SiC or B4C. The thin film assembly according to embodiments of the present disclosure is more robust and less prone to damage that would shorten the lifespan of the thin film assembly.

[0123] Figure 1 is a schematic diagram of a lithography system 100 according to some embodiments of the present disclosure. The lithography system 100 may also be referred to herein as a "scanner", and the lithography system 100 can be operated to perform a lithography exposure process using a corresponding radiation source and exposure mode.

[0124] In some embodiments, the lithography system 100 includes a high-brightness light source 102, an illuminator 104, a photomask 108, a projection optical module 110, and a substrate stage 112. In some embodiments, the lithography system 100 may include Figure 1 additional components not shown. In additional embodiments, one or more of the high-brightness light source 102, the illuminator 104, the photomask 108, the projection optical module 110, and the substrate stage 112 may be omitted from the lithography system 100, or may be integrated into a combined component.

[0125] The high-brightness light source 102 can be configured to emit radiation having a wavelength in the range of approximately 1 nanometer (nm) to 250 nm. In some embodiments, the high-brightness light source 102 generates EUV light having a wavelength centered at approximately 13.5 nanometers; thus, the high-brightness light source 102 can also be referred to as an "EUV light source". However, it should be understood that the high-brightness light source 102 should not be limited to emitting EUV light. For example, the high-brightness light source 102 can be used to perform any high-intensity photon emission from an excited target material.

[0126] In an embodiment where the lithography system 100 is a UV lithography system, for example, the illuminator 104 includes various refractive optical components, such as a single lens or a lens system including multiple lenses (zone plates). In an embodiment where the lithography system 100 is an EUV lithography system, for example, the illuminator 104 includes various reflective optical elements, such as a single mirror or a mirror system including multiple mirrors. The illuminator 104 can direct light from the high-brightness light source 102 onto the mask stage 106, and more specifically, onto the photomask 108 fixed to the mask stage 106. In an example where the high-brightness light source 102 generates light in the EUV wavelength range, the illuminator 104 includes reflective optical elements.

[0127] The mask stage 106 can be configured to hold the photomask 108. In some examples, the mask stage 106 can include an electrostatic chuck (e-chuck) to hold the photomask 108. This is because gas molecules absorb EUV light, and the lithography system 100 for EUV lithography patterning is maintained in a vacuum environment to minimize EUV intensity loss. Herein, the terms "photomask", "mask", and "reticle" can be used interchangeably. In some embodiments, the photomask 108 is a reflective mask.

[0128] In some examples, the pellicle 114 can be positioned above the photomask 108, for example, between the photomask 108 and the substrate stage 112. The pellicle 114 can protect the photomask 108 from particles and can keep the particles out of focus so that the particles do not produce an image (which may cause defects on the wafer during the lithography process).

[0129] The projection optical module 110 can be configured to image the pattern of the photomask 108 onto the semiconductor wafer 116 fixed to the substrate stage 112. In some embodiments, the projection optical module 110 includes refractive optical elements (such as for a UV lithography system). In some embodiments, the projection optical module 110 includes reflective optical elements (such as for an EUV lithography system). The light guided from the photomask 108 can be collected by the projection optical assembly 110, where the light guided from the photomask 108 carries the pattern defined on the photomask 108. The illuminator 104 and the projection optical assembly can be collectively referred to as the "optical assembly" of the lithography system 100.

[0130] In some embodiments, the semiconductor wafer 116 can be a bulk semiconductor wafer. For example, the semiconductor wafer 116 can include a silicon wafer. The semiconductor wafer 116 can include silicon or other elemental semiconductor materials, such as germanium. In some embodiments, the semiconductor wafer 116 can include a compound semiconductor. The compound semiconductor can include gallium arsenide, silicon carbide, indium arsenide, indium phosphide, other suitable materials, or combinations thereof. In some embodiments, the semiconductor wafer 116 includes a silicon-on-insulator (SOI) substrate. The SOI substrate can be fabricated using a separation by implantation of oxygen (SIMOX) process, a wafer bonding process, other applicable processes, or combinations thereof. In some embodiments, the semiconductor wafer 116 includes an undoped substrate. However, in other embodiments, the semiconductor wafer 116 includes a doped substrate, such as a p-type substrate or an n-type substrate.

[0131] In some embodiments, depending on the design requirements of the semiconductor device structure, the semiconductor wafer 116 includes various doped regions (not shown). The doped regions can include, for example, p-type wells and / or n-type wells. In some embodiments, the doped regions are doped with a p-type dopant. For example, the doped regions can be doped with boron or boron fluoride. In other examples, the doped regions are doped with an n-type dopant. For example, the doped regions can be doped with phosphorus or arsenic. In some examples, some of the doped regions are p-doped and other doped regions are n-doped.

[0132] In some embodiments, an interconnect structure can be formed over the semiconductor wafer 116. The interconnect structure can include multiple interlayer dielectric layers, including dielectric layers. The interconnect structure can also include multiple conductive features formed in the interlayer dielectric layers. The conductive features can include conductive lines, conductive vias, and / or conductive contacts.

[0133] In some embodiments, various device elements are formed in the semiconductor wafer 116. Examples of various device elements can include metal oxide semiconductor field effect transistors (MOSFETs), complementary metal oxide semiconductor (CMOS) transistors, bipolar junction transistors (BJTs), high-voltage transistors, high-frequency transistors, p-channel and / or n-channel field effect transistors (PFETs and / or NFETs), diodes, or other suitable elements. Various processes can be used to form the various device elements, including deposition, etching, implantation, lithography, annealing, and / or other applicable processes.

[0134] Device components can be interconnected through an interconnect structure above the semiconductor wafer 116 to form integrated circuit components. The integrated circuit components can include logic components, memory devices (such as static random access memory (SRAM) devices), radio frequency (RF) devices, input / output (I / O) devices, system-on-chip (SoC) devices, image sensor devices, other suitable devices, or combinations thereof.

[0135] In some embodiments, the semiconductor wafer 116 can be coated with a photoresist layer sensitive to EUV light. Various components including those described above can be integrated together and operably perform a lithography exposure process.

[0136] Figure 2A is a cross-sectional view of a thin-film photomask structure 200 according to some embodiments of the present disclosure. As Figure 2A shown, the photomask 108 can include a mask substrate 202 and a mask pattern 204 located above the mask substrate 202.

[0137] In some embodiments, the mask substrate 202 includes a transparent substrate, such as relatively defect-free fused quartz, borosilicate glass, soda-lime glass, calcium fluoride, low thermal expansion material, ultra-low thermal expansion material, or other suitable materials. As described above, the mask pattern 204 can be located above the mask substrate 202, and the mask pattern 204 can be designed according to the integrated circuit features to be formed on a semiconductor substrate (e.g., Figure 1 the semiconductor wafer 116) during a lithography process. The mask pattern 204 can be formed by depositing a material layer and patterning this material layer to have one or more openings through which a radiation beam can pass without being absorbed and one or more absorption regions that can completely or partially block the radiation beam.

[0138] The mask pattern 204 can include metals, metal alloys, metal silicides, metal nitrides, metal oxides, metal oxynitrides, or other suitable materials. Examples of materials that can be used to form the mask pattern 204 can include, but are not limited to, Cr, Mo x Si y Ta x Si y Mo, Nb x O y Ti, Ta, Cr x N y Mo x O y Mo x Ny , Cr x O y , Ti x N y , Zr x N y , Ti x O y , Ta x N y , Ta x O y , Si x O y , Nb x N y , Zr x N y , Al x O y N z , Ta x B y O z , Ta x B y N z , Ag x O y , Ag x N y , Ni, Ni x O y , Ni x O y N z etc. The x / y / z ratio of the compound is not limited.

[0139] In some embodiments, the photomask 108 is an EUV photomask. However, in other embodiments, the photomask 108 can be an optical photomask.

[0140] As Figure 2A shown, the pellicle 114 can be positioned above the photomask 108 to form a closed internal space 206 surrounded by the pellicle 114 and the photomask 108.

[0141] In some embodiments, the pellicle 114 includes a thin film frame 210, which can be positioned above at least one of the mask substrate 202 and the mask pattern 204. The thin film frame 210 can be designed in various sizes, shapes, and configurations. In some embodiments, the thin film frame 210 can have a circular, rectangular, or any other suitable shape. In some embodiments, the thin film frame 210 can be formed of Si, SiC, SiN, glass, a low coefficient of thermal expansion material (such as an Al alloy, a Ti alloy, Invar, Kovar, etc.), other suitable materials, or a combination thereof. In some embodiments, suitable processes for forming the thin film frame 210 can include machining processes, sintering processes, photochemical etching processes, other applicable processes, or a combination thereof.

[0142] As Figure 2A As further shown, the pellicle 114 may further include a venting structure 212 extending through the thin film frame 210. In some embodiments, the venting structure 212 can include one or more holes formed through the thin film frame 210. The holes can be of any shape, including circular holes, rectangular holes, slit-shaped holes, other shapes, or any combination thereof. These holes can allow air to flow through a portion of the thin film-mask structure 200. In some embodiments, the holes can include filters to minimize the passage of external particles through the venting structure 212. In some embodiments, the venting structure 212 can prevent the pellicle 114 from rupturing during the EUV lithography process.

[0143] As Figure 2A As further shown, the thin film frame 210 is attached to the mask 108 by a thin film frame adhesive 214. In some embodiments, the thin film frame adhesive 214 can be formed of a crosslinkable adhesive, a thermoplastic elastomer adhesive, a polystyrene adhesive, an acrylic adhesive, a silicone adhesive, an epoxy adhesive, or a combination thereof.

[0144] In some embodiments, the surface of the thin film frame 210 can be treated to enhance the adhesion between the thin film frame 210 and the thin film frame adhesive 214. In some examples, the surface treatment can include oxygen plasma treatment, other applicable treatments, or a combination thereof. However, in other examples, the surface of the thin film frame 210 may not be treated.

[0145] As Figure 2A In Figure 2BFurther shown, the pellicle 114 includes a pellicle assembly 230, and the pellicle assembly 230 includes a first layer having a pellicle film 232, a second layer including a pellicle frame 242, and a pellicle border 234 located above the pellicle frame 210. The pellicle film 232 extends over the patterned area of the photomask 108 to protect the patterned area from contaminating particles. Particles inadvertently deposited on the patterned area of the photomask 108 may introduce defects and cause degradation of the transferred pattern. Particles can be introduced in any of a variety of ways, such as during a cleaning process and / or during handling of the photomask 108. By keeping contaminant particles out of the focal plane of the photomask 108, high-fidelity pattern transfer from the photomask 108 to the semiconductor wafer 116 ( Figure 1 ) can be achieved. The pellicle film 232 includes an image area 233, which is the portion through which incident and / or reflected EUV radiation of the pellicle film 232 passes.

[0146] As Figure 2A shown in the embodiment of, the pellicle frame 242 is located below the pellicle film 232. In some embodiments, the pellicle frame 242 includes a central area or image area 235 that does not contain the material that makes up the remainder of the pellicle frame 242. In some embodiments, this central image area 235 coincides and overlaps with all or at least a portion of the patterned area of the photomask 108. Since the central area 235 of the pellicle frame 242 does not contain the material that makes up the remainder of the pellicle frame 242, the central area 235 of the pellicle frame 242 does not protect the patterned area of the photomask 108 from contaminating particles. In Figure 2A the embodiment shown, the portion of the upper surface of the pellicle border 234 that overlaps the body of the pellicle frame 242 is flush with the body of the pellicle frame 242. In other embodiments, the portion of the upper surface of the pellicle border 234 that overlaps the body of the pellicle frame 242 is not flush with the body of the pellicle frame 242. For example, in some embodiments, as described in more detail below, the portion of the body of the pellicle frame 242 that overlaps the pellicle border 234 is wider than the pellicle border 234. In other embodiments, the portion of the body of the pellicle frame 242 that overlaps the pellicle border 234 is narrower than the pellicle border 234. In some embodiments, Figure 2A not shown in, the pellicle frame 242 is located above the pellicle film 232 such that the pellicle film 232 is located between the pellicle frame 242 and the pellicle border 234. Referring to Figure 2B the embodiment of, the pellicle frame 242 is located above the pellicle film 232, and the surface of the pellicle film 232 contacts the pellicle border 234.

[0147] According to some embodiments of the present disclosure, the thin film frame 242 is formed of a carbon-based material layer. In some embodiments, the carbon-based material is graphene, such as multi-layer graphene. In other embodiments, the carbon-based material is a heterostructure nanotube network or a non-heterostructure nanotube network. Examples of heterostructure nanotubes include core-shell structures with single-walled, double-walled, or multi-walled carbon nanotubes (CNTs) as the core and boron nitride nanotubes (BNNTs) or SiC, MoS2, MoSe2, WS2, WSe2, SnS2, SnS, ZrO2, ZrO, TiO2 nanotubes as the shell, or CNTs as the core and SiC, SiON, SiN, Y2O3, TiO2, ZrO, RuO2, Ru, Ir, Pt, B4C, YF3, Ta, Nb, Nb2O5, Zr, Mo, MoO2, Fe, Ni, Co nanoparticles or continuous thin film wrappings or outer shells.

[0148] The thin film adhesive 240 may be located between the thin film border 234 and the thin film frame 210 to connect the thin film assembly 230 to the thin film frame 210. In some embodiments, the thin film adhesive 240 may be formed of a thermoplastic elastomer-based adhesive, a polystyrene-based adhesive, an acrylic-based adhesive, a silicone-based adhesive, an epoxy-based adhesive, other suitable adhesives, or a combination thereof. In some embodiments, the thin film adhesive 240 may be formed of a material different from the material that constitutes the thin film frame adhesive 214.

[0149] In Figure 2A the embodiments, one surface of the thin film frame 242 contacts one surface of the thin film 232 and surrounds the periphery of the surface of the thin film 232. The other surface of the thin film frame 242 contacts the thin film border 234. In this way, the combination of the thin film frame 242 and the thin film border 234 mechanically supports the thin film 232. In other embodiments, for example, in Figure 2B the thin film frame 242 is located above the thin film 232 and on the opposite side where the thin film 232 contacts the thin film border 234. In any embodiment, when the thin film-photomask structure 200 is fully assembled, the thin film border 234 can be mechanically supported by the thin film frame 210. That is, the thin film frame 210 can mechanically support the thin film border 234, the thin film frame 242, and the thin film 232 on the photomask 108.

[0150] In some embodiments, the thin film border 234 may be formed of Si. In other embodiments, the thin film border 234 may be formed of boron carbide, graphene, carbon nanotubes, SiC, SiN, SiO2, SiON, Zr, Nb, Mo, Cd, Ru, Ti, Al, Mg, V, Hf, Ge, Mn, Cr, W, Ta, Ir, Zn, Cu, F, Co, Au, Pt, Sn, Ni, Te, Ag, other suitable materials, allotropes of any of these materials, or combinations thereof.

[0151] As described above, in the embodiments of the present disclosure, the thin film 232 is formed of one or more layers of heterostructure nanotube layers or one or more layers of non - heterostructure nanotube layers. In Figure 2B the following description, the heterostructure nanotube layers and non - heterostructure nanotube layers are collectively referred to as nanotube layers 243, and heterostructure nanotubes and non - heterostructure nanotubes are collectively referred to as nanotubes. Each nanotube layer may include a random or regular nanotube network or web, or a nanotube bundle 244. For example, Figure 2C Exemplary nanotube layers 243 of the thin film 232 shown according to some embodiments of the present disclosure Figure 2A or Figure 2B are shown. In the Figure 2C example shown, the thin film 243 includes a plurality of large bundles or networks of multi - walled bundled nanotubes 253 (e.g., carbon nanotubes). The following description refers to carbon nanotubes; however, it should be understood that the embodiments of the present disclosure are not limited to thin films formed of carbon nanotubes. According to the embodiments of the present disclosure, the thin film and the thin film frame may be formed of nanotubes including carbon - and / or non - carbon - based materials or carbide - based materials. According to the embodiments of the present disclosure, the large bundle multi - wall CNTs include 15 to 100 CNTs, and in some embodiments include more than 100 CNTs. Exemplary multi - wall CNTs may have a diameter of 1.5 to 2 nanometers or greater, depending on the number of walls included in the multi - wall CNT. For example, four - wall CNTs may have a diameter of approximately 4 nanometers. The diameter of the nanotube bundle depends in part on the diameter of each nanotube that makes up the nanotube bundle and the efficiency of packing of the individual nanotubes. For example, in some embodiments, Figure 2C the diameter X of the nanotube bundle shown may range from 5 to 30 nanometers or greater. In other embodiments, the bundled nanotubes 244 may be individual single - wall nanotubes. The structural density of the nanotube network is selected to maximize EUV radiation transmission while minimizing the passage of particles through the thin film 232. For example, in some embodiments, the network 243 of nanotube bundles that make up the thin film 232 may have a structural density between 0.2 and 1, depending on the desired percentage of radiation transmitted by the thin film 232. For example, the thin film 232 has an EUV light transmittance of greater than 80%.

[0152] For example, Figure 2D is shown Figure 2CCross-sectional view of the bundled nanotube structure 244 of the bundled nanotube structure network 243 shown in []. As shown, the bundled nanotube structure 244 includes a moderate number of single-walled nanotubes, such as CNT251. The moderate number of single-walled nanotubes ranges from 2 to 12 individual nanotubes. The single-walled nanotubes can have many different diameters, such as about 0.1 nm to 10 nm. The single-walled nanotubes can have many different lengths, such as about 10 nm to about 1 μm, about 20 nm to about 500 nm, or about 50 nm to about 100 nm. In some embodiments, the single-walled nanotubes can have an aspect ratio of about 100:1 to 1000:1 (i.e., the ratio of the length of the nanotube to the diameter of the nanotube). An individual nanotube bundle containing a moderate number of individual nanotubes (i.e., a medium-sized nanotube bundle) can have many different outer diameter sizes, such as 10 nm to 75 nm or 20 nm to 55 nm. The individual medium-sized nanotube bundles can have many different lengths, such as from 500 nm to 30 μm or from 1000 nm to 100 μm. In some embodiments, the individual medium-sized nanotube bundles of single-walled nanotubes can have an aspect ratio of about 50:1 to 1500:1 (i.e., the ratio of the length of the medium-sized nanotube bundle to the diameter of the medium-sized nanotube bundle). This disclosure uses CNT as an example of a nanotube that can be used to form a nanotube bundle according to the embodiments of this disclosure. This disclosure is not limited to CNT as the only nanotube that can be used to form the nanotube bundles according to this disclosure.

[0153] In the medium-sized carbon nanotube bundle, each carbon nanotube can be arranged and connected longitudinally. The CNTs among the medium-sized CNT bundles can also be connected end to end, such that the length of the medium-sized CNT bundle is greater than the length of each CNT. The CNTs can generally be connected by van der Waals forces or other forces that attract the individual CNTs to each other. In some embodiments, the medium-sized CNT bundle 244 is formed from a CNT aggregate. The CNT aggregate can include more than 10 individual CNTs arranged side by side and connected end to end. Thus, the length and diameter of the CNT aggregate are respectively greater than the length and diameter of the individual CNTs. In some embodiments, each CNT can have a surrounding material shell, such as a boron shell. In some embodiments, each CNT is formed as Figure 1 the medium-sized CNT bundle shown in []. As Figure 2D shown, the shell material surrounds all or part of the individual medium-sized CNT bundle 244.

[0154] For example, Figure 2E shows Figure 2CCross-sectional view of the bundled nanotube structure 245 of the bundled nanotube structure network shown in []. As shown, the bundled nanotube structure 245 includes a large number of single-walled CNTs 251. The number of the large number of single-walled CNTs 251 ranges from 13 to 20 individual CNTs. In other embodiments, the large number of single-walled CNTs includes more than 20 individual CNTs. The above reference Figure 2D The description of the single-walled CNTs 251 in [] also applies to Figure 2E the single-walled CNTs 251 of the embodiments in []. Individual CNT bundles (i.e., large CNT bundles) containing a large number of individual CNTs can have many different outer diameter sizes, such as 10 nm to 75 nm or 20 nm to 55 nm. The large CNT bundles can have many different lengths, such as from 500 nm to 30 μm or from 1000 nm to 100 μm. In some embodiments, the large CNT bundles of single-walled CNTs can have an aspect ratio of about 50:1 to 1500:1 (i.e., the ratio of the length of the large CNT bundle to the diameter of the large CNT bundle). In the large CNT bundles, the individual CNTs can be arranged and connected longitudinally. The large CNT bundles can also be connected end to end, such that the length of the large CNT bundle is greater than the length of each CNT. The CNTs can generally be connected by van der Waals forces or other forces that attract the individual CNTs to each other. In some embodiments, the medium-sized CNT bundle 245 is formed by CNT aggregates. The CNT aggregates can include more than 12 or more than 20 individual CNTs arranged side by side and end to end. Therefore, the length and diameter of the CNT aggregates are respectively greater than the length and diameter of the individual CNTs. In some embodiments, each CNT can have an encapsulating material shell, such as a boron shell. In some embodiments, each CNT is formed into Figure 1 the large CNT bundle shown in []. As Figure 2E shown, the shell material encapsulates all or part of the individual large CNT bundle 244.

[0155] Reference Figure 2F and Figure 2G In some embodiments, the medium-sized CNT bundle 244' and the large CNT bundle 245' can be formed by a plurality of multi-walled nanotubes 253, such as double-walled nanotubes or nanotubes having more than two walls. Compared with single-walled nanotubes, double-walled nanotubes or multi-walled nanotubes provide the advantage of greater mechanical strength. The multi-walled CNTs 253 have a plurality of graphite layers that are generally concentric around a common axis. The above description regarding Figure 2D and Figure 2E the number of individual single-walled CNTs in the medium-sized CNT bundle and the large CNT bundle applies to Figure 2D and Figure 2ECNT bundles of multi-walled CNTs of embodiments. The diameter of the multi-walled CNTs can range from about 3 nm to about 100 nm. The multi-walled carbon nanotubes can have various lengths. For example, the multi-walled CNTs can have a length of about 10 nm to about 1 μm, about 20 nm to about 500 nm, or about 50 nm to about 100 nm. In some embodiments, the multi-walled CNTs can have an aspect ratio of about 100:1 to 1000:1 (i.e., the ratio of the length of the CNT to the diameter of the CNT). Individual CNT bundles (i.e., medium-sized CNT bundles) containing a medium number of individual multi-walled CNTs can have many different outer diameter sizes, such as 10 nm to 75 nm or 20 nm to 55 nm. Individual medium-sized CNT bundles containing multi-walled CNTs can have many different lengths, such as from 500 nm to 30 μm or from 1000 nm to 100 μm. Individual medium-sized CNT bundles of multi-walled CNTs can have an aspect ratio of about 50:1 to 1500:1 (i.e., the ratio of the length of the medium-sized CNT bundle to the diameter of the medium-sized CNT bundle). In medium-sized or large-sized CNT bundles of multi-walled CNTs, the individual CNTs can be arranged and connected along the longitudinal direction. The multi-walled CNTs of the medium-sized or large-sized CNT bundles can also be connected end-to-end, such that the length of the resulting CNT bundle is greater than the length of each CNT. The CNTs can generally be connected by van der Waals forces or other forces that attract the individual CNTs to each other. In some embodiments, the medium-sized CNT bundle 244' or large-sized CNT bundle 245' of multi-walled CNTs is formed from a CNT aggregate. The CNT aggregate can include more than 10 individual CNTs arranged side by side and connected end-to-end. Thus, the length and diameter of the CNT aggregate are respectively greater than the length and diameter of the individual CNTs. In some embodiments, each CNT can have a surrounding material shell, such as a boron shell. In some embodiments, each CNT is formed into Figure 2F and Figure 2G the medium-sized or large-sized CNT bundles shown, and the shell material surrounds all or at least a portion of each medium-sized CNT bundle 244' or large-sized CNT bundle 245'.

[0156] Reference Figure 3A , Figure 3A shows Figure 2C an alternative embodiment of the nanotube bundle 244 of the heterostructure nanotube bundle network. Figure 3AThe nanotube bundles 244 therein include a plurality of multi-walled nanotubes 253 surrounded by a shell 246 (a shell material, such as a non-carbon-based material or a carbide-based material). In some embodiments, the shell 246 having a shell material includes one or more layers of non-carbon nanotubes or carbide-based nanotubes. In other embodiments, the shell 246 is a multi-walled nanotube having a shell material (such as a non-carbon-based material or a carbide-based material), or is a nanoparticle or a continuous film wrapper of a non-carbon-based material or a carbide-based material. Examples of non-carbon nanotubes include boron nitride nanotubes or nanotubes of SiC, MoS2, MoSe2, WS2, WSe2, SnS2, SnS, ZrO2, ZrO, TiO2. Examples of other non-carbon-based materials include SiON, SiN, Y2O3, TiO2, ZrO, RuO2, Ru, Ir, Pt, YF3, Ta, Nb, Nb2O5, Zr, Mo, MoO2, Fe, Ni, Co. Examples of carbide-based materials include SiC nanotubes or a wrapper or shell of SiC or B4C nanoparticles or a continuous film.

[0157] Figure 3A The illustrated embodiment of the nanotube bundle 244 can be modified to include one or more layers 247a and 247b of a shell material inside the individual multi-walled nanotubes 253. In some embodiments, the shell material of each multi-walled nanotube completely fills or partially fills the central void of the multi-walled nanotube, which may include carbon nanotubes or nanotubes of SiC, MoS2, MoSe2, WS2, WSe2, SnS2, SnS, ZrO2, ZrO, TiO2. These embodiments are shown in Figure 3C and Figure 3D Examples of materials that can be used to form layers 247a and 247b include nanotubes of non-carbon-based materials, such as boron nitride. Other examples of materials that can be used to form layers 247a and 247b include SiC, SiON, SiN, Y2O3, TiO2, ZrO, RuO2, Ru, Ir, Pt, B4C, YF3, Ta, Nb, Nb2O5, Zr, Mo, MoO2, Fe, Ni, and Co.

[0158] Refer to Figure 3B , Figure 3B shown Figure 2C and Figure 3A for alternative embodiments of the nanotube bundle 244 of the heterostructure nanotube bundle network shown in Figure 3BThe nanotube bundle 244 therein includes a second layer 249 of the shell material located between a plurality of multi-walled nanotubes 253 and the outer shell 246 of the shell material. In some embodiments, the second layer 249 of the shell material includes one or more layers of nanotubes, or nanoparticles or continuous films of SiC, MoS2, MoSe2, WS2, WSe2, SnS2, SnS, ZrO2, ZrO, or TiO2. In other embodiments, the second layer 249 of the shell material includes one or more layers of nanotubes, or nanoparticles or continuous films of SiC, SiON, SiN, Y2O3, TiO2, ZrO, RuO2, Ru, Ir, Pt, B4C, YF3, Ta, Nb, Nb2O5, Zr, Mo, MoO2, Fe, Ni, and Co. In other embodiments, the second layer 249 of the shell material includes one or more layers of nanotubes, or nanoparticles or continuous films of SiC, SiON, SiN, Y2O3, TiO2, ZrO, RuO2, Ru, Ir, Pt, B4C, YF3, Ta, Nb, Nb2O5, Zr, Mo, MoO2, Fe, Ni, Co, MoS2, MoSe2, WS2, WSe2, SnS2, SnS, or ZrO2. In other embodiments, an additional layer of the material of the outer shell 246 or the second layer 249 may be provided.

[0159] Figure 3B The illustrated embodiment of the nanotube bundle 244 may be modified to include a first layer 247a of the shell material inside each multi-walled nanotube 253 and a second layer 247b of the shell material inside each multi-walled nanotube 253. In some embodiments, the shell material of each multi-walled nanotube 253 completely fills or partially fills the central void of the multi-walled nanotube. This embodiment is shown in Figure 3D Examples of materials that can be used to form the layer 247a and the layer 247b include nanotubes of non-carbon-based materials, such as boron nitride. Examples of materials that can be used to form the layer 247a and the layer 247b include SiC, SiON, SiN, Y2O3, TiO2, ZrO, RuO2, Ru, Ir, Pt, B4C, YF3, Ta, Nb, Nb2O5, Zr, Mo, MoO2, Fe, Ni, and Co. In other embodiments, the layers 247a and 247b of the shell material include one or more layers of nanotubes, or nanoparticles or continuous films of SiC, SiON, SiN, Y2O3, TiO2, ZrO, RuO2, Ru, Ir, Pt, B4C, YF3, Ta, Nb, Nb2O5, Zr, Mo, MoO2, Fe, Ni, Co, MoS2, MoSe2, WS2, WSe2, SnS2, SnS, or ZrO2. In other embodiments, an additional layer of the material of the outer shell 246, the second layer 249, the layer 247a, or the layer 247b may be provided.

[0160] Figure 3E shows Figure 2B A perspective view of the heterostructure nanotube 250 of the heterostructure nanotube network shown. As shown, the heterostructure nanotube 250 includes a CNT core 252 surrounded by a boron nitride (BNNT) shell 254. In some embodiments, the CNT core 252 is formed by a single CNT and the BNNT shell 254 surrounding this single CNT. In some embodiments, the CNT core 252 is formed by a CNT bundle and the BNNT shell 254 surrounds the CNT bundle. The CNT bundle may include, for example, 2 to 20 individual CNTs. In the CNT bundle, each CNT may be arranged and connected along the longitudinal direction. The CNT bundles may also be connected end to end, such that the length of the CNT bundle is greater than the length of each CNT. CNTs can generally be connected by van der Waals forces. In some embodiments, the CNT core 252 is formed by a CNT aggregate and the BNNT shell 254 surrounds the CNT aggregate. The CNT aggregate may include more than 10 individual CNTs arranged side by side and connected end to end, so that the length and diameter of the CNT aggregate are respectively greater than the length and diameter of the individual CNTs. The BNNT shell 254 has excellent mechanical strength while maintaining a high transmittance to EUV radiation. In this way, the stability of the CNTs is improved.

[0161] The CNT core 252 can be formed by single-walled or double-walled nanotubes or multi-walled carbon nanotubes. Single-walled CNTs can have many different diameters, such as about 0.1 nm to 10 nm. Multi-walled CNTs have multiple graphite layers arranged substantially concentrically around a common axis. The diameter of the multi-walled CNTs can be in the range of about 3 nm to about 100 nm. Single-walled or multi-walled carbon nanotubes can have a variety of lengths. For example, single-walled or multi-walled CNTs can have a length of about 10 nm to about 1 μm, about 20 nm to about 500 nm, or about 50 nm to about 100 nm. In some embodiments, single-walled or multi-walled CNTs can have an aspect ratio (i.e., the ratio of the length of the CNT to the diameter of the CNT) of about 100:1 to 1000:1.

[0162] The BNNT shell 254 can be a single-walled or multi-walled boron nitride nanotube containing 1 to 40 layers of boron nitride. The total thickness of the BNNT shell 254 is controlled such that the BNNT shell 254 does not reduce the transparency of the thin film 232 to EUV radiation while providing reliable protection for the CNT core 252. In some embodiments, the total thickness of the BNNT shell 254 can be in the range of about 1 nm to about 20 nm. If the thickness of the BNNT shell 254 is too small, in some cases, it is not sufficient to protect the CNT core 252 from UV or EUV radiation or chemical substances such as hydrogen ions, hydrogen radicals or oxygen. If the thickness of the BNNT shell 254 is too large, the transparency of the thin film will be reduced in some cases. In some embodiments, the BNNT shell 254 has a thickness of 5 nm.

[0163] Figures 4A to 4B Alternative embodiments of a thin film assembly including a thin film 232, a thin film border 234, and a thin film frame 242 are shown in accordance with some embodiments of the present disclosure. In Figure 4A this case, the thin film 232 includes a plurality of graphene layers. For example, Figure 4A the thin film 232 may include 3 to 60 layers of graphene formed by known techniques. In Figure 4A this case, the thin film frame 242 also includes a plurality of graphene layers and may include 30 to 160 layers of graphene. One surface of the thin film frame 242 contacts the thin film border 234, and the opposite surface of the thin film frame 242 contacts the thin film 232.

[0164] Figure 4B Embodiments of this include a thin film border 234 that supports the thin film frame member 242, and the thin film frame member 242 supports the thin film 232. According to Figure 4B embodiments of this, the thickness of the network or layer of carbon nanotubes of the carbon-based material is 10 to 500 nm, and the thin film 232 includes 3 to 60 layers of graphene.

[0165] Figure 4C Embodiments of this include a thin film border 234 that supports the thin film frame member 242, and the thin film frame member 242 in turn supports the thin film 232. In Figure 4C embodiments of this, the thin film frame member 242 has a plurality of graphene layers, and the thin film 232 includes a network or layer of carbon nanotubes of a carbon-based material (such as carbon nanotubes). According to Figure 4C embodiments of this, the thickness of the network or layer of carbon nanotubes of the carbon-based material forming the thin film 232 is 10 to 100 nm, and the thin film frame 242 including graphene layers includes 30 to 160 layers of graphene.

[0166] According to other embodiments, the thin film 232 and the thin film frame 242 may include a combination of graphene and carbon nanotubes of a carbon-based material.

[0167] Figure 4D Embodiments of this include a thin film border 234 that supports the thin film frame member 242, and the thin film frame member 242 in turn supports the thin film 232. In Figure 4D embodiments of this, the thin film frame member 242 includes a network or layer of carbon nanotubes of a carbon-based material (such as carbon nanotubes). According to Figure 4D embodiments of this, the thickness of the network or layer of carbon nanotubes of the carbon-based material forming the thin film 232 is 10 to 100 nm, and the thickness of the thin film frame 242 including the network or layer of carbon nanotubes of the carbon-based material is 10 to 500 nm. In Figure 4B and Figure 4C embodiments of this, the carbon-based material of the thin film 232 is different from the carbon-based material of the anti-thin film frame 242. Instead, in Figure 4Aand Figure 4D In the embodiment of, the carbon-based material of the thin film 232 is the same as the carbon-based material of the thin film frame 242.

[0168] Figure 5A Shown according to the above Figure 2A and Figures 4A to 4D An exploded view of the surface film 114 according to the embodiment of. As described above, the surface film 114 includes a thin film 232, a thin film frame 242, a thin film border 234, and a frame 210. Figure 5A The thin film adhesive 240 and the vent hole 212 are not shown in. The surface film 114 is located above the mask 204, and the mask 204 includes an image field 205. The image field 205 includes a first dimension 503 (e.g., length) and a second dimension 505 (e.g., width). As Figure 5A shown, the thin film frame 242 is a carbon-based material layer, which includes an opening 501, where the opening 501 does not contain a carbon-based material and covers the first image area of the image field 205. The main body 242B of the thin film frame 242 surrounds the opening 501 in the thin film frame 242. The width of the main body 242B of the thin film frame 242 is equal to or greater than the width of the thin film border 234. In some embodiments, the main body 242B is 10% to 60% wider than the thin film border 234. The opening 501 includes a first dimension 503, e.g., the length of the opening 501, and a second dimension 505, e.g., the width of the opening 501. According to the embodiment of the present disclosure, the first dimension 503 of the image field 205 is equal to or less than the first dimension 507 of the opening 501, and the second dimension 505 of the image field 205 is equal to or less than the second dimension 509 of the opening 501. In some embodiments, the first dimension 503 and the second dimension 505 differ from the first dimension 507 and the second dimension 509 by less than 0.005%. Figure 5A The surface film 114 in includes another layer of carbon-based material forming the thin film 232, which does not include an opening similar to the opening 501 in the thin film frame 242. This additional carbon-based material layer forming the thin film 232 is a complete carbon-based material layer.

[0169] Referring to Figure 5B , in an alternative embodiment, the surface film 114 includes a structure similar to the surface film 114 described above with reference to Figure 5A ; however, Figure 5B the surface film 114 of the embodiment of includes a smaller image field 205 and opening 501, e.g., not as long and narrow as the opening 501 of the surface film 114 described above with reference to Figure 5A . The balance described above with reference to Figure 5A also applies to Figure 5B the surface film 114 of.

[0170] Figures 6A to 6DShows an alternative embodiment of a combination of a thin film 232, a thin film border 234, and a thin film frame 242 adjacent to the thin film 232 according to an embodiment of the present disclosure. In Figure 6A the thin film 232 includes a plurality of graphene layers. For example, Figure 6A the thin film 232 may include 3 to 60 layers of graphene. In Figure 6A the thin film frame 242 also includes a plurality of graphene layers and may include 30 to 160 layers of graphene. One surface of the thin film 232 contacts the thin film border 234, and the opposite surface of the thin film 232 contacts the thin film frame 242. Contrary to the embodiment of Figures 4A to 4D , in the embodiment of Figures 6A to 6D the thin film frame 242 is located above the thin film 232, rather than below. Figure 6B The embodiment includes a thin film border 234 that supports the thin film 232, and the thin film 232 in turn supports the thin film frame 242. In Figure 6B the embodiment, the thin film frame member 242 includes a network or layer of nanotubes of a carbon-based material (such as carbon nanotubes). According to Figure 6B the embodiment, the network or layer of nanotubes of the carbon-based material has a thickness of 10 to 500 nanometers, and the thin film 232 includes 3 to 60 layers of graphene. According to Figure 6B the embodiment, the network or layer of nanotubes of the carbon-based material has a thickness of 10 to 500 nm, and the thin film 232 includes 3 to 60 layers of graphene. Figure 6C The embodiment includes a border 234 that supports the thin film 232, and the thin film 232 in turn supports the thin film frame 242. In Figure 6C the embodiment, the thin film frame member 242 has a plurality of graphene layers, and the thin film 232 includes a network or layer of nanotubes of a carbon-based material (such as carbon nanotubes). According to Figure 6C the embodiment, the network or layer of nanotubes of the carbon-based material forming the thin film 232 has a thickness of 10 to 100 nm, and the thin film frame 242 including graphene layers includes 30 to 160 layers of graphene. Figure 6D The embodiment includes a border 234 that supports the thin film 232, and the thin film 232 in turn supports the thin film frame 242. In ​ the embodiment, the thin film frame member 242 includes a network or layer of nanotubes of a carbon-based material (such as carbon nanotubes). According to ​ the embodiment, the network or layer of nanotubes of the carbon-based material forming the thin film 232 has a thickness of 10 to 100 nm, and the thin film frame 242 including a network or layer of nanotubes of the carbon-based material has a thickness of 10 to 500 nanometers. In ​ and ​ the embodiments, the carbon-based material of the thin film 232 is different from the carbon-based material of the thin film frame 242. Conversely, in ​ and ​In the embodiments, the carbon-based material of the thin film 232 is the same as the carbon-based material of the thin film frame 242.

[0171] ​ Shows according to above ​ And above ​ Exploded view of the surface film 114 of the embodiment. ​ And ​ Similar, and in ​ The same reference numerals are used to label ​ In the features that are the same as those in ​ As described above, the surface film 114 includes a thin film 232, a thin film frame 242, a thin film border 234, and a frame 210. ​ The thin film adhesive 240 and the vent hole 212 are not shown in. The surface film 114 is located above the mask 204, and the mask 204 includes an image field 205. The image field 205 includes a first dimension 503 (such as length) and a second dimension 505 (such as width). As ​ Shown, the thin film frame 242 is a carbon-based material layer, which includes an opening 501, where the opening 501 does not contain carbon-based material and covers the first image area of the image field 205. The main body 242B of the thin film frame 242 surrounds the opening 501 in the thin film frame 242. The width of the main body 242B of the thin film frame 242 is equal to or greater than the width of the thin film border 234. In some embodiments, the main body 242B is 10% to 60% wider than the thin film border 234. The opening 501 includes a first dimension 503, such as the length of the opening 501, and a second dimension 505, such as the width of the opening 501. According to the embodiments of the present disclosure, the first dimension 503 of the image field 205 is equal to or less than the first dimension 507 of the opening 501, and the second dimension 505 of the image field 205 is equal to or less than the second dimension 509 of the opening 501. In some embodiments, the first dimension 503 and the second dimension 505 differ from the first dimension 507 and the second dimension 509 by less than 0.005%. ​ The surface film 114 in includes another layer of carbon-based material forming the thin film 232, which does not include an opening similar to the opening 501 in the thin film frame 242. This additional carbon-based material layer forming the thin film 232 is a complete carbon-based material layer.

[0172] Refer to ​ , in an alternative embodiment, the surface film 114 includes a structure similar to the surface film 114 described above with reference to ​ ; however, ​ The surface film 114 of the embodiment includes a smaller image field 205 and an opening 501, for example, not as long and narrow as the opening 501 of the surface film 114 described above with reference to ​ . The balance described above with reference to ​ Also applies to ​of the pellicle 114.

[0173] ​ Seven different cross-sectional views of the thin-film border 234 supporting the thin-film frame 242 are shown according to embodiments of the present disclosure. In ​ the embodiment, the thin-film frame 242 covers the thin film 232. ​ It is shown that the thin-film frame 242 can have different cross-sectional shapes. ​ It is shown that the thin-film frame 242 includes a rectangular cross-sectional shape. In ​ wherein the dimension W is the portion of the thin-film frame 242 that does not cover the thin-film border 234. In other words, in some embodiments, the width of the thin-film frame 242 is greater than the width of the thin-film border 234. The width of the thin-film frame 242 can be selected such that the thin-film frame 242 does not collide with the imaging area of the thin film 232. In ​ wherein in some embodiments where the thin-film frame 242 is wider than the width of the thin-film border 234, when the thin-film frame 242 is formed, the carbon-based material of the thin-film frame 242 also accumulates on the vertical sidewalls of the thin-film border 234. In ​ the embodiment, the thin-film frame 242 includes a rectangular cross-sectional shape, wherein the thin-film frame 242 has a shape that is circular from the upper half to the corner edges. ​ It is shown that the thin-film frame 242, wherein the thin-film frame 242 includes a generally rectangular cross-sectional shape with a domed or convex upper surface. ​ It is shown that the thin-film frame has a straight trapezoidal cross-sectional shape, and the inclined surface of this straight trapezoid slopes downward toward the center of the thin-film frame 242. ​ It is shown that the thin-film frame 242 includes an isosceles trapezoidal cross-sectional shape. ​ It is shown that the thin-film frame 242 has a straight trapezoidal cross-sectional shape, and the inclined surface of this straight trapezoid slopes outward from the center of the thin-film frame 242. ​ It is shown that the thin-film frame 242 has a cross-sectional shape that is generally rectangular and has a concave upper surface.

[0174] ​ Seven different cross-sectional views of the thin-film border 234 supporting the thin-film frame 242 are shown according to embodiments of the present disclosure. In ​ the embodiment, the thin-film frame 242 is located below the thin film 232. Regarding ​ the description of the cross-sectional shapes of the various embodiments also applies to ​ .

[0175] ​ is a top plan view of a thin film formed according to an embodiment of the present disclosure. ​The thin film includes a first layer of carbon-based material forming the thin film 232 and a second layer of carbon-based material forming the thin film frame 242. The shape of the thin film frame 242 is rectangular and includes four legs 511a, 511b, 511c, and 511d and four corners 510. Each corner 510 connects two legs of the thin film frame 242 (i.e., two of 511a, 511b, 511c, and 511d). One of the corners 510 is labeled in ​ According to an embodiment of the present disclosure, one or more of the corners 510 may include ​ one of the vertical shape 512, the tapered shape 514, or the rounded shape 516 shown. The vertical corner shape 512 is L-shaped and connects the leg 511a to the leg 511b through a 90-degree corner. The tapered corner shape 514 connects the legs 511a and 511b and is defined by an angular line 513 extending between the legs 511a and 511b. The angular line 513 defines the outer boundary of a wedge of carbon-based material that fills the space between the legs 511a and 511b defined by the angular line 513. The rounded corner shape 516 connects the legs 511a and 511b and includes a circular line 515 extending between the legs 511a and 511b. The circular line 515 defines the outer boundary of a wedge of carbon-based material that fills the space between the legs 511a and 511b defined by the circular line 515. The rounded corner shape 516 provides greater resistance to damage (e.g., breakage or cracking) due to external forces than the tapered corner shape 514, and the tapered corner shape provides greater resistance to damage due to external forces than the vertical corner shape 512.

[0176] ​ and ​ are flowcharts of a method 300 for manufacturing a thin film assembly 230 ( ​ shown in ​ ) using a reactor 410 ( ​ ) according to some embodiments of the present disclosure.

[0177] Referring to ​ and​ , according to some embodiments, method 300 includes operation 302, in which nanotubes of a carbon-based material (such as CNT 404) are formed in a first reaction zone 412 of reactor 410. The following describes the method for manufacturing nanotubes of a carbon-based material with reference to CNTs; however, the embodiments according to the present disclosure are not limited to manufacturing CNTs and also include manufacturing nanotubes of carbon-based materials that are not CNTs. ​ Reactor 410 is configured to form CNT core 252 and BNNT shell 254 that constitute heterostructure nanotube 250 in a continuous process. ​ is a schematic diagram of reactor 410 according to some embodiments, which shows the growth of CNT 404 in the first reaction zone 412 of reactor 410 by a gas-phase flow method.

[0178] In operation 302, CNT 404 is synthesized, for example, by a catalytic chemical vapor deposition (CVD) process, in which pyrolysis of a carbon source occurs on metal catalyst particles 402 formed in-situ. As ​ shown, reactor 410 includes a first reaction zone 412 and a second reaction zone 414 located downstream of the first reaction zone 412. CNT 404 is synthesized in the first reaction zone 412, while BNNT 406 ( ​ ) grows around CNT 404 in the second reaction zone 414. The following description refers to BNNT as an example of a nanotube formed from a non-carbon-based material. The embodiments of the present disclosure are not limited to BNNT. In some embodiments, nanotubes of a non-carbon-based material are formed from materials other than boron nitride. In some embodiments, the first reaction zone 412 has a length greater than 5 meters (m). In some embodiments, reactor 410 includes a heating element 416 suitable for heating reactor 410, which includes a quartz tube vertically installed within heating element 416. In some embodiments, heating element 416 is a dual-zone heating element configured to heat reactor 410 to maintain a first temperature in the first reaction zone 412 of reactor 410 and a second temperature in the second reaction zone 414. In some embodiments, heating element 416 is configured to maintain a temperature gradient from about 500 °C to about 1100 °C in the first reaction zone 412 and a temperature of about 1000 °C to about 1100 °C in the second reaction zone 414 of reactor 410.

[0179] The first gas supply unit 420 is fluidly connected to the first reaction zone 412 of the reactor 410 via a first gas inlet 422. The first gas supply unit 420 is configured to supply a carrier gas including an inert gas such as argon (Ar) and / or a reaction gas such as hydrogen (H2) into the reactor 410. The first gas inlet 422 may include a nozzle for injecting a reaction mixture.

[0180] The first source material supply unit 430 is fluidly connected to the first reaction zone 412 of the reactor 410 via a first reactant inlet 432. The first source material supply unit 430 is configured to supply a raw material for growing the CNT 404 to the first reaction zone 412. In some embodiments, the first reactant inlet 432 is connected to one side of the first gas inlet 422. Thus, the injection direction is perpendicular to the flow direction of the carrier gas.

[0181] The second source material supply unit 440 is fluidly connected to the second reaction zone 414 of the reactor 410 via a second reactant inlet 442. The second source material supply unit 440 is configured to supply a boron nitride source for growing boron nitride nanotubes to the second reaction zone 414 of the reactor 410. A shut-off valve 444 is connected to the second reactant inlet 442 and is used to automatically cut off the vaporized boron nitride source from flowing into the reactor 410.

[0182] The second gas supply unit 450 is fluidly connected to the second source material supply unit 440 via a second gas inlet 452. The second gas supply unit 450 is configured to supply a carrier gas to the second source material supply unit 440 to carry the vaporized boron nitride source into the second reaction zone 414 of the reactor 410.

[0183] In the CVD process, a raw material including a raw material for growing CNT is supplied from the first source material supply unit 430 to the first reaction zone 412 of the reactor 410 via the first reactant inlet 432. In some embodiments, the raw material includes a carbon source. Examples of the carbon source may include, but are not limited to, gaseous carbon sources such as methane, ethane, propane, ethylene, acetylene, and liquid volatile carbon sources such as benzene, toluene, xylene, trimethylbenzene, methanol, ethanol, and / or octanol. Alternatively, carbon monoxide gas or carbon dioxide gas may be used as the carbon source.

[0184] The raw material also includes a catalyst precursor, from which metal catalyst particles 402 can be produced for subsequent growth of CNTs 404. Examples of catalyst precursors may include, but are not limited to, transition metals such as tungsten, molybdenum, chromium, iron, nickel, cobalt, rhodium, ruthenium, palladium, osmium, iridium, or platinum, and organometallic complexes such as ferrocene, cobaltocene, nickelocene, iron carbonyl, iron acetylacetonate, or iron oleate. Based on the amount of the carbon source, the raw material may include catalyst precursors in an amount of 0.5 weight percent (wt%) to 5wt%, 1wt% to 5wt%, or 1.5wt% to 4wt%. If an excess of catalyst precursor is used relative to the amount of the carbon source, the catalyst may become an impurity, making it difficult to obtain high-purity CNTs.

[0185] In some embodiments, the raw material may further include a catalyst promoter. The catalyst promoter contains sulfur atoms that interact with the metal catalyst particles 402 to promote the formation of single-walled CNTs. Examples of catalyst promoters may include, but are not limited to, thiophene, thianaphthene, benzothiophene, and hydrogen sulfide. Based on the amount of the carbon source, the raw material may include a catalyst promoter in an amount of 0.5wt% to 5wt%, 1wt% to 5wt%, or 1.5wt% to 4wt%. If an excess of catalyst promoter is used relative to the amount of the carbon source, the catalyst promoter may become an impurity, making it difficult to obtain high-purity CNTs.

[0186] In some embodiments, the feedstock includes methane as a carbon source, ferrocene as a catalyst precursor, and thiophene as a catalyst promoter.

[0187] The raw materials may be delivered to the reactor 410 via a carrier gas to ensure a rapid homogeneous reaction. In some embodiments, the carrier gas may include an inert gas such as argon (Ar) or helium (He) and / or a reactive gas such as hydrogen (H2). In some embodiments, the ratio of the carbon source to the carrier gas, i.e., the volume ratio of the carbon source to the carrier gas, is 5.0×10 -8 to 1.0×10 -4 v / v or 1.0×10 -7 to 1.0×10 -5 In some embodiments, the carbon source is introduced into the reactor 410 at a flow rate ranging from 4 standard cubic centimeters per minute (sccm) to 120 sccm.

[0188] In some embodiments, the raw materials can be preheated before or during introduction into the first reaction zone 412 of the reactor 410 to evaporate the reactants in the raw materials. In some embodiments, the temperature of the raw materials is maintained below the decomposition temperature of the catalyst precursor before entering the first reaction zone 412 of the reactor 410. If the temperature exceeds the decomposition temperature of the catalyst precursor, catalyst clusters may form prematurely during the process and lose their activity before participating in the CNT growth process. In some embodiments, the raw materials are maintained at a temperature of 70 °C to 200 °C.

[0189] The reactor 410 is heated to create a temperature gradient in the first reaction zone 412. In some embodiments, a temperature gradient from about 500 °C to about 1100 °C is generated as the temperature increases along the length of the first reaction zone 412. In some embodiments, the length of the first reaction zone 412 is greater than 5 meters. Thus, once the raw materials are injected into the first reaction zone 412 of the reactor 410 via the first gas inlet 422, the catalyst precursor decomposes to form metal catalyst particles 402. In some embodiments, the metal catalyst particles 402 can be formed to have a diameter in the range from about 0.5 nm to about 5 nm. When the carbon source contacts the metal catalyst particles 402 in the first reaction zone 412, the carbon source decomposes on the metal catalyst particles 402 at a high temperature (e.g., at about 700 °C or higher) in such a way that the metal catalyst particles 402 are embedded in the growth tip of the CNT 404, enabling the CNT 404 to grow from the metal catalyst particles 402. Thus, the diameter of the CNT 404 is determined by the size of the metal catalyst particles 402. Each formed CNT 404 can include a single CNT or a CNT bundle including, for example, 2 to 20 individual CNTs.

[0190] Reference ​ and ​ According to some embodiments, the method 300 proceeds to the optional operation 304, where BNNTs 406 are formed in the second reaction zone 414 of the reactor 410 to surround the CNTs 404. ​ is a schematic diagram of the reactor 410 according to some embodiments, showing the growth of BNNTs 406 around the CNTs 404 in the second reaction zone 414 of the reactor 410.

[0191] As ​ shown, the BNNTs 406 can be formed by first providing a boron nitride source 448 in the second source material supply unit 440. In some embodiments, the boron nitride source 448 can include amine borane complexes such as aminoborane (H2B=NH2), ammonia borane (H3N-BH3), borazine (B3N3H3), or combinations thereof.

[0192] Next, the second source material supply unit 440 can be heated to a temperature at which the boron nitride source 448 sublimes. The temperature at which sublimation occurs can vary depending on the type of boron nitride source 448 used. In some embodiments, the sublimation of the boron nitride source 448 is carried out at a temperature greater than about 50°C and less than about 100°C. In some embodiments, the sublimation of the boron nitride source 448 is carried out at a temperature in the range of 70°C to 90°C, such as about 70°C, about 75°C, about 80°C, about 85°C, or about 90°C. In some embodiments, when the boron nitride source 448 is ammonia borane, the sublimation of ammonia borane is carried out at about 80°C.

[0193] Next, the vaporized boron nitride source can be mixed with a carrier gas flowing into the second source material supply unit 440 via the second gas inlet 452. In some embodiments, the carrier gas is an inert gas, such as argon. The flow rate of the carrier gas can flow into the second source material supply unit 440 in the range of about 5 sccm to about 15 sccm.

[0194] When the CNT 404 enters the second reaction zone 414 of the reactor 410, the shut-off valve 444 opens to allow the vaporized boron nitride source 448 carried by the carrier gas to flow into the second reaction zone 414 of the reactor 410 via the second reactant inlet 442. The second reaction zone 414 is maintained at a temperature high enough to promote the growth of BNNTs 406 on the CNT 404, but not so high as to adversely affect the physical and chemical properties of the CNT 404. The temperature of the second reaction zone 414 is also high enough to remove the metal catalyst particles 402 at the tip of the CNT 404. In some embodiments, the temperature of the second reaction zone 414 is maintained at about 1000°C to about 1100°C.

[0195] At the second reaction zone 414, the vaporized boron nitride source contacts the CNT 404 and decomposes at the temperature of the second reaction zone 414 to form boron nitride.

[0196] The growth of BNNTs 406 can be carried out in an inert atmosphere and / or a reducing atmosphere. An inert gas such as argon or helium can be used to create an inert atmosphere. Hydrogen can be used to create a reducing atmosphere. When the inert gas and hydrogen are used as a mixture, the amount of the inert gas can be about 90 vol% to about 97 vol%, and the amount of hydrogen can be about 3 vol% to about 10 vol%. For example, the inert gas can be supplied at a flow rate of about 100 sccm to about 500 sccm, and for example, hydrogen can be supplied at a flow rate of about 5 sccm to about 30 sccm. In some embodiments, a mixed gas of argon and hydrogen containing 3% hydrogen is supplied to the reactor 410 via the first gas inlet 422.

[0197] The resulting BNNT 406 can include any number of boron nitride layers, such as from 1 layer to about 100 layers. For example, in some embodiments, the BNNT 406 can include from 1 layer to about 20 layers of boron nitride.

[0198] Thus, a plurality of heterostructure nanotubes 250 are formed. Each heterostructure nanotube 250 includes a CNT 404 as a core (i.e., a CNT core 252) and a BNNT 406 as a shell (i.e., a BNNT shell 254). As described above, the CNT 404 can be a single CNT or a CNT bundle including 2 to 20 individual CNTs.

[0199] The high temperature used for growing the BNNT 406 (i.e., a temperature from 1000 °C to about 1100 °C) causes the metal catalyst nanoparticles 402 at the tip of the CNT 404 to evaporate, which in turn results in the removal of the metal catalyst from the heterostructure nanotube 250. Thus, after leaving the reactor 410, the heterostructure nanotube 250 contains less than 0.01 atomic % of the catalyst metal. In some embodiments, the catalyst metal is completely removed such that the heterostructure nanotube 250 is free of the catalyst metal. Since the catalyst metal has a higher absorption coefficient than carbon and boron nitride at EUV wavelengths, the simultaneous removal of the catalyst metal during the growth of the BNNT 406 helps to improve the EUV transmittance of the thin film 232.

[0200] Reference ​ and ​ , according to some embodiments, the method 300 proceeds to operation 306, where a thin film 232 is formed above the substrate 460. ​ is a schematic diagram of a reactor 410 according to some embodiments, showing the heterostructure nanotube 250 leaving the reactor 410, thereby forming a thin film 232 above the substrate 460.

[0201] As ​ shown, a cooling process can be performed on the heterostructure nanotube 250. The cooling process can be carried out, for example, at a rate of about 10 °C to about 100 °C per minute, or about 20 °C to about 80 °C per minute. During the cooling process, an inert gas such as argon can be supplied to the reactor 410 via the first gas inlet 422 to prevent oxidation of the heterostructure nanotube 250. In some embodiments, argon can flow into the reactor 410 at a flow rate of about 100 sccm to about 800 sccm. The cooling process can be a natural cooling process, which can be achieved by stopping the operation of the heating element 416 or by moving the heating element 416 away from the reactor 410.

[0202] The heterostructure nanotubes 250 are collected at the bottom of the reactor 410 through the substrate 460. In some embodiments, the substrate 460 may include a filter membrane 462. In some embodiments, the filter membrane 462 is a porous membrane having pores with diameters between about 0.1 μm and about 5 μm. In one example, the pore size in the filter membrane 462 is about 0.1 μm to about 0.6 μm. In another instance, the pore size is about 0.45 μm. In some embodiments, the filter membrane 462 is formed of polyethylene terephthalate (PET) or coated with polyethylene terephthalate (PET). In some embodiments, the filter membrane 462 is formed of or coated with other suitable materials, such as nylon, cellulose, polymethylmethacrylate (PMMA), polystyrene (PS), polytetrafluoroethylene (PTFE), or polybenzoxazole (PBO). In some embodiments, the filter membrane 462 is formed of a cellulose-based filter paper. In some embodiments, the filter membrane 462 is a hydrophilic membrane. In some other embodiments, the filter membrane 462 is a hydrophobic membrane. In some embodiments, to prevent the heterostructure nanotubes 250 from passing through the pores of the filter membrane 462, the substrate 460 may further include a support or mask 464 on which the filter membrane 462 is placed. The support 464 may be formed of any suitable material, such as glass or quartz. In some embodiments, the support 464 is formed of a quartz substrate.

[0203] A vacuum suction process may be performed on the substrate 460 to facilitate the uniform dispersion of the heterostructure nanotubes 250 on the filter membrane 462. Thus, one or more layers of uniformly distributed heterostructure nanotubes 250 are formed on the filter membrane 462 to provide the thin film 232. The thin film 232 may include, for example, one, two, three, four, or more layers of heterostructure nanotube layers. Each heterostructure nanotube layer may include a random network of heterostructure nanotubes 250.

[0204] In some embodiments, after the thin film 232 is formed, the support 464 may be removed from the structure.

[0205] Referring to

[0206] and ​ and ​ According to some embodiments, the method 300 proceeds to operation 308, where the thin film 232 is transferred from the filter membrane 462 to the thin film border 234. ​Schematic diagram of transferring the thin film 232 to the thin film border 234 according to some embodiments.

[0207] As ​ shown, first, the thin film 232 is attached to the thin film border 234 along the peripheral portion thereof, thereby effecting the transfer of the thin film 232. In some embodiments, the thin film border 234 is made of silicon. To attach the thin film border 234 to the thin film 232, in some embodiments, the thin film border 234 first physically contacts the thin film 232. Then, assuming sufficient force is used, the thin film border 234 is pressed against the thin film 232 to fix the thin film border 234 to the thin film 232. In some embodiments, the thin film border 234 and the thin film 232 are held together by van der Waals forces. In some embodiments, prior to attaching the thin film border 234 to the thin film 232, the thin film border 234 is pre-wetted with a polar solvent such as ethanol. Ethanol helps to increase the adhesion between the thin film border 234 and the thin film 232, thereby providing stable contact therebetween.

[0208] Subsequently, the filter membrane 462 is removed from the thin film 232. In some embodiments, the filter membrane 462 can be removed by peeling or pulling the filter membrane 462 away from the thin film 232. As ​ shown, after removing the filter membrane 462, the thin film border 234 supports the thin film 232 along the peripheral portion of the thin film 232.

[0209] In some embodiments, and when ethanol is used to improve the adhesion between the thin film 232 and the thin film border 234, after removing the filter membrane 462, the assembly including the thin film 232 and the thin film border 234 is dried in air or under vacuum for a period of time to allow the ethanol to evaporate.

[0210] Referring ​ and ​ , according to some embodiments, the method 300 proceeds to operation 310, where the thin film 232 is densified.

[0211] As ​As shown, the heterostructure nanotubes 250 in the densified film 232 form aligned heterostructure nanotube bundles held together by van der Waals forces. Densification can be performed by first treating the film 232 with an organic solvent. The organic solvent is a volatile solvent such as ethanol, methanol, acetone, dichloroethane, chloroform, or a combination thereof. In some embodiments, the film 232 is treated by exposing it to ethanol vapor. After the heterostructure nanotubes 250 in the film 232 come into contact with the organic solvent, they are compressed into heterostructure nanotube bundles. The densified heterostructure nanotube structure increases the density of the film 232, which helps to minimize the passage of particles through the film 232. The densified heterostructure nanotube structure also helps to improve the contact between the film 232 and the film border 234. After densification, the film 232 is dried under vacuum or in air.

[0212] The resulting film 232 includes a network of densified heterostructure nanotubes 250. The heterostructure nanotubes 250 are randomly arranged in the film 232 such that the heterostructure nanotubes 250 do not align along a major or dominant direction. The film 232 can have a thickness ranging from about 50 nm to about 100 nm. Depending on the porosity of the film 232, the thickness of the film 232 can be greater.

[0213] Reference ​ and ​ , method 300 proceeds to operations 312 and 314 to form BNNT-coated CNTs for forming a second layer of the carbon-based material as the film frame 242, where the BNNT-coated CNTs' are deposited on the first layer of the BNNT-coated CNTs 250, and the first layer of the BNNT-coated CNTs 250 is used to form the film 232 attached to the film border 234. Operation 314 is optional, and the following description of the BNNT-coated CNTs also applies to embodiments of the present disclosure that omit the optional operation 314. The formation of the BNNT-coated CNTs for forming the film frame 242 can be performed in the same manner as the formation of the BNNT-coated CNTs for forming the film 232 as described above with reference to ​ and ​ . In ​ , in operation 316, the BNNT-coated CNTs produced by operation 314 are deposited on the film 232 above the film border 234 supported under the reactor 410. In operation 316, the BNNT-coated CNTs are deposited using the filter membrane 462', which is the same as the filter membrane 462 described above with reference to operation 306. In operation 314, the support 464' is used with the filter membrane 462' to provide the substrate 460'. The support 464' is the same as ​The support member 464 therein is different in that it includes an open space 463 that does not contain materials that block the holes through which the CNTs coated with BNNT pass through the filter membrane 462'. In operation 316, the CNTs coated with BNNT fall onto the portion of the thin film 232 that overlaps with the open space 463, penetrate the thin film on the thin film frame 234, and pass through the holes of the filter membrane 462'. In operation 316, the CNTs coated with BNNT that fall onto the portion of the thin film 232 that does not overlap with the open space 463 are blocked from passing through the thin film 232 by the thin film frame 234 and the support member 464'. These CNTs coated with BNNT that do not penetrate the thin film 232 or the filter membrane 462' accumulate on the thin film 232 and form the thin film frame 242.

[0214] Reference ​ and ​ , according to some embodiments, method 300 proceeds to operation 318, in which the thin film 232 and the thin film frame 242 of the thin film assembly 230 are densified. ​ is a schematic diagram of densifying the thin film 232 and the thin film frame 242 according to some embodiments. The process described above with reference to ​ is used to densify the thin film assembly 230.

[0215] As ​ shown, the heterostructure nanotubes in the thin film 232 and the thin film frame 242 of the thin film assembly 230 are densified into large bundles of heterostructure nanotubes arranged and held together by van der Waals forces. Densification can be performed by first treating the thin film 232 and the thin film frame 242 with an organic solvent. The organic solvent is a volatile solvent, such as ethanol, methanol, acetone, dichloroethane, chloroform, or a combination thereof. In some embodiments, the thin film 232 and the thin film frame 242 are treated by exposing them to ethanol vapor. After the heterostructure nanotubes 250 in the thin film 232 and the thin film frame 242 come into contact with the organic solvent, they are compressed into bundles of heterostructure nanotubes. The densified heterostructure nanotube structure increases the density of the thin film 232 and the thin film frame 242, which enhances these features and helps to minimize the channels for particles to pass through the thin film 232. The densified heterostructure nanotube structure also helps to improve the contact between the thin film 232 and the thin film frame 242. After densification, the thin film 232 is dried under vacuum or in air.

[0216] In the above reference ​ and ​In the described embodiments, one or more layers of BNNTs are applied to the formed CNTs in selective operations 304 and 314. In other embodiments, selective operations 304 and 314 are omitted. In any case, according to embodiments of the present disclosure, in selective operation 320, a non-carbon-based material layer can be formed on a film assembly 230 including a film 232 and a film frame 242 (including hetero-structured nanotubes or non-hetero-structured nanotubes).

[0217] ​ A system for performing operation 320 is shown. In operation 320, nanotubes of a non-carbon-based material, such as BNNT 406, are formed by a low-pressure thermal CVD process, where when the vapor contacts the CNT aggregates 616 of the film 232 and the film frame 242 in the reactor 630, the vaporized boron nitride source undergoes pyrolysis. The pyrolysis causes the boron nitride source to decompose into boron nitride. The boron nitride is thus deposited on the CNT aggregates 616 as a shell (i.e., the BNNT shell 254).

[0218] The reactor 630 includes a horizontally upright quartz tube surrounded by a heating element 416 for heating the reactor 630. A first gas supply unit 420 is fluidly connected to the reactor 630 via a first gas inlet 422 located at one end of the reactor 630. A source material supply unit 440 containing a boron nitride source 448 is fluidly connected to the reactor 630 via a reactant inlet 442. The source material supply unit 440 is configured to supply the boron nitride source for growing BNNTs to the reactor 630. A second gas supply unit 450 is fluidly connected to the source material supply unit 440 via a second gas inlet 452. The second gas supply unit 450 is configured to supply a carrier gas to the source material supply unit 440.

[0219] A film assembly 230 including a film 232, a film frame 242, and a film border 234 is placed inside the reactor 630. Then, by using the heating element 416 to heat the reactor 630, the temperature of the reactor 630 is gradually increased to a temperature in the range of about 1000°C to 1100°C.

[0220] The source material supply unit 440 is then heated to a temperature at which the boron nitride source 248 will sublime. The sublimation temperature can vary depending on the type of boron nitride source 448 used. In some embodiments, the sublimation of the boron nitride source 448 is carried out at a temperature greater than about 50°C and less than about 100°C. In some embodiments, the sublimation of the boron nitride source 448 is carried out at a temperature in the range of 70°C to 90°C, such as about 70°C, about 75°C, about 80°C, about 85°C, or about 90°C. In some embodiments, and when the boron nitride source is ammonia borane, the sublimation of ammonia borane is carried out at about 80°C.

[0221] Next, the vaporized boron nitride source is mixed with a carrier gas flowing into the source material supply unit 440 via the second gas inlet 452 from the second gas supply unit 450. In some embodiments, the carrier gas is an inert gas, such as argon. The carrier gas may flow into the source material supply unit 440 at a flow rate in the range of about 5 sccm to about 15 sccm.

[0222] Then, the vaporized boron nitride source carried by the carrier gas is supplied to the reactor 630 via the reactant inlet 442. The vaporized boron nitride source contacts the CNT aggregate 616 and then decomposes to form boron nitride. Boron nitride is conformally deposited on the surface of the thin film assembly 230 to present the morphological structure of the thin film assembly 230, thereby forming the BNNT 406 around the thin film assembly 230.

[0223] The growth of the BNNT 406 can be carried out in an inert atmosphere and / or a reducing atmosphere. An inert gas such as argon or helium can be used to create an inert atmosphere. Hydrogen can be used to create a reducing atmosphere. When the inert gas and hydrogen are used as a mixture, the amount of the inert gas can be about 90 vol% to about 97 vol%, and the amount of hydrogen can be about 3 vol% to about 10 vol%. For example, the inert gas can be supplied at a flow rate of about 100 sccm to about 500 sccm, and for example, hydrogen can be supplied at a flow rate of about 5 sccm to about 30 sccm. In some embodiments, a mixed gas of argon and hydrogen containing 3% hydrogen is supplied to the reactor 630 at a flow rate of 300 sccm via the first gas inlet 422. The growth of the BNNT 406 is carried out at a low pressure of about 10 -3 Torr to about 10 -2 Torr.

[0224] The resulting BNNT 406 may include any number of boron nitride layers, for example, from a single layer to about 100 layers of boron nitride. In some embodiments, the BNNT 406 may include from a single layer to about 20 layers of boron nitride.

[0225] The high temperature (i.e., a temperature from 1000 °C to about 1100 °C) for growing the BNNT shell 254 causes the evaporation of the metal catalyst particles 402 at the tips of the CNTs 404 contained in the CNT aggregate 616, and thus, results in the removal of the metal catalyst from the heterostructure nanotube 250. Therefore, after leaving the reactor 410, the heterostructure nanotube 250 contains less than 0.01 atomic% of the catalyst metal. In some embodiments, the catalyst metal is completely removed such that the heterostructure nanotube 250 does not contain the catalyst metal. Since the catalyst metal has a higher absorption coefficient than carbon and boron nitride in the EUV wavelength region, the simultaneous removal of the catalyst metal during the growth of the BNNT 406 helps to improve the EUV transmittance of the thin film.

[0226] In an alternative embodiment of the present disclosure, instead of forming a BNNT nanotube layer in operation 320, the shell material includes one or more layers of nanotubes, or nanoparticles or continuous films of SiC, MoS2, MoSe2, WS2, WSe2, SnS2, SnS, ZrO2, ZrO, or TiO2. In other embodiments of operation 320, the shell material layer includes one or more layers of nanotubes, or nanoparticles or continuous films of SiC, SiON, SiN, Y2O3, TiO2, ZrO, RuO2, Ru, Ir, Pt, B4C, YF3, Ta, Nb, Nb2O5, Zr, Mo, MoO2, Fe, Ni, and Co. In other embodiments of operation 320, the shell material layer includes one or more layers of nanotubes, or nanoparticles or continuous films of SiC, SiON, SiN, Y2O3, TiO2, ZrO, RuO2, Ru, Ir, Pt, B4C, YF3, Ta, Nb, Nb2O5, Zr, Mo, MoO2, Fe, Ni, Co, MoS2, MoSe2, WS2, WSe2, SnS2, SnS, or ZrO2.

[0227] ​ and ​ is a flowchart of method 1300 for fabricating thin film assembly 230 ( ​ therein) using reactor 410 ( ​ therein). ​ The reactor 410 in ​ is the same as the reactor 410 in ​ except that the reactor 410 in ​ and ​ does not include components 440, 442, 444, 448, 450, and 452, which constitute a subsystem for providing raw materials to produce nanotubes of non-carbon-based materials, and the nanotubes of the non-carbon-based materials are deposited on a single nanotube of a carbon-based material or a nanotube bundle of a carbon-based material. The methods described above with reference to ​ and ​ provide a thin film assembly 230 that includes a thin film frame 242 covering the thin film 232. Conversely, the methods described below with reference to ​ and ​ provide a thin film assembly 230 that includes a thin film frame 242 located below the thin film 232. It should be understood that the methods described below with reference to ​ can be performed in the reactor 410 of

[0228] ​ and ​Methods and ​ and ​ The main difference between the methods is the order of forming the film frame 242 and the film 232. ​ and ​ In an embodiment of the method, in method 1300, in operation 1301, ​ Individual single-walled or multi-walled nanotubes 240 of carbon-based materials are formed in the reactor 410 in the process. In operation 1302, the individual single-walled or multi-walled carbon nanotubes 240 are selectively bundled to form nanotube bundles. In operation 1306, the film frame 242 is collected on a substrate 460, which includes a filter membrane 462 and a support member 464 with an opening 463. In operation 1308, the film frame 242 is transferred from the filter membrane 462 to the film frame 234. In operation 1310, the film frame 242 is densified. The above description of operations 308 and 310 of method 300 applies to operations 1308 and 1310 of method 1300. Next, the film frame 234 carrying the densified film frame 242 returns to the reactor 410, where the film 232 is deposited onto the densified film frame 242. Reference ​ and ​ In operation 1312, individual single-walled or multi-walled carbon nanotubes 240 of carbon-based material are formed. In operation 1314, the individual single-walled or multi-walled carbon nanotubes 240 are selectively bundled to form nanotube bundles. In operation 1316, the film 232 is collected on a film frame 242, wherein the film frame 242 is supported by a film frame 234. In operation 1316, a substrate 460 is used that includes a filter membrane 462 and a support member 464, wherein the support member 464 does not contain an opening 463. In operation 1318, the film assembly 230 including the film frame 242, the film 232, and the film frame 234 is transferred and separated from the filter membrane 462. In operation 1320, the film assembly 230 is densified. The above description of the densification operation 310 of method 300 applies to operation 1320 of method 1300. In some embodiments, after operation 1320, the thin film assembly 230 may be processed to form one or more layers of nanotube shells, such as BNNT or non-BNNT materials, on the thin film assembly 230. This process may be performed as described above with reference to ​ Description to execute.

[0229] ​ and ​ is used to use the reactor 410 ( ​ Manufacturing thin film components 230 ( ​ Flowchart of method 1500 of ). ​ The reactor 410 and ​ The reactor 410 is the same as in FIG. ​ and ​The method describes an alternative method for providing a thin film component 230 that includes a thin film frame 242 located below a thin film 232. It should be understood that the methods described below with reference to ​ and ​ can be carried out in a reactor 410 of ​ In this case, the thin film component 230 includes a thin film frame 242 located below the thin film 232, and the thin film 232 can be formed by carbon-based nanotubes or a bundle of carbon-based nanotubes coated with non-carbon-based materials (such as BNNT).

[0230] ​ and ​ The main difference between the method of ​ and ​ lies in when the thin film 232 mates with the thin film frame 242. According to the embodiments of the methods of Figure 15A and Figure 15B In method 1500, in operation 1501, individual single-walled or multi-walled nanotubes 240 of carbon-based materials are formed in the reactor 410 of Figure 16A . In operation 1502, optionally, each single-walled or multi-walled carbon nanotube 240 can be bundled to form a nanotube bundle. In operation 1506, the thin film frame 242 is collected on a substrate 460 that includes a filter membrane 462 and a support 464 having an opening 463. In operation 1508, the thin film frame 242 is transferred from the filter membrane 462 to the thin film border 234. In operation 1510, the thin film frame 242 is densified. The descriptions of operations 308 and 310 of method 300 above apply to operations 1508 and 1510 of method 1500. Referring to Figure 15B and Figure 16B , in operation 1512, individual single-walled or multi-walled nanotubes 240 of carbon-based materials are formed. In operation 1514, optionally, each single-walled or multi-walled carbon nanotube 240 can be bundled to form a nanotube bundle. In operation 1516, the thin film 232 is collected on the filter membrane 462. In operation 1516, the substrate 460 is used, which includes a filter membrane 462 and a support 464 without an opening 463. In operation 1518, and as shown in Figure 16C , the thin film 242 on the filter membrane 462 is transferred from the filter membrane 462 to the thin film frame 242 supported by the thin film border 234. In operation 1520, the thin film component 230 is densified. The description of the densification operation 310 of method 300 above applies to operation 1520 of method 1500. In some embodiments, after operation 1520, the thin film component 230 can be processed to form one or more layers of non-carbon-based materials (such as BNNT) or nanotubes of other shell materials on the thin film component 230. This process can be carried out according to the above referenceFigure 12H Description to execute.

[0231] Figure 17A and Figure 17B is used to use the reactor 410 ( Figure 14A Manufacturing thin film components 230 ( Figure 2A Flowchart of method 1700 of ). Figure 18A The reactor 410 and Figure 14A The reactor 410 is the same as in FIG. Figure 17A and Figure 17B The method of describes an alternative method for providing a film assembly 230 that includes a film frame 242 covering a film 232. It should be understood that the following references to Figure 17A and Figure 17B The described method can be Figure 12A The membrane assembly 230 is carried out in a reactor 410, in which case the membrane assembly 230 includes a membrane frame 242 covering a membrane 232, which can be formed by nanotubes of a carbon-based material or a bundle of nanotubes of a carbon-based material, including individual nanotubes coated with a shell material, such as a non-carbon-based material, such as BNNT.

[0232] Figure 17A and Figure 17B Methods and Figure 11A and Figure 11B The main difference between the methods is when the film 232 is engaged with the film frame 242. Figure 17A and Figure 17B In an embodiment of the method, in method 1700, Figure 18A In operation 1701, individual single-walled or multi-walled nanotubes 240 of a carbon-based material are formed in a reactor 410 of the method. In operation 1702, the individual single-walled or multi-walled carbon nanotubes 240 are optionally bundled to form a nanotube bundle. In operation 1706, the thin film 232 is collected on a substrate 460, which includes a filter membrane 462 and a support member 464 without an opening 463. In operation 1708, the thin film 232 is transferred from the filter membrane 462 to the film frame 234. In operation 1710, the thin film 232 is densified. The above description of operations 308 and 310 of method 300 applies to operations 1708 and 1710 of method 1700. Reference Figure 17B and Figure 18B In operation 1712, individual single-walled or multi-walled carbon nanotubes 240 of carbon-based materials are formed. In operation 1714, the individual single-walled or multi-walled carbon nanotubes 240 can be optionally bundled to form a nanotube bundle. In operation 1716, the film frame 242 is collected on the filter membrane 462. In operation 1716, a substrate 460 including the filter membrane 462 and a support member 464 having an opening 463 is used. In operation 1718 and asFigure 18C As shown, the thin film frame 242 on the filter membrane 462 is transferred from the filter membrane 462 to the thin film 232 supported by the thin film border 234. In operation 1720, the thin film assembly 230 is densified. The above description of the densification operation 310 of method 300 applies to operation 1720 of method 1700. In some embodiments, after operation 1720, the thin film assembly 230 can be processed to form one or more layers of nanotube shells, non-carbon-based nanotubes, such as BNNT, or other shell materials on the thin film assembly 230. This process can be performed according to the description above with reference to Figure 12H the description provided.

[0233] Figure 19 is a flowchart of a lithographic patterning method of a multi-layer thin film assembly 230 formed using embodiments of the present disclosure. Method 1900 includes operation 1902, which includes providing a multi-layer thin film assembly above a photomask, where one layer of the multi-layer thin film assembly includes an image region that does not contain a carbon-based thin film material. Examples of multi-layer thin film assemblies that include a layer with an image region that does not contain a carbon-based thin film material include the thin film assemblies described above. Method 1900 continues with operation 1904, where EUV radiation passes through the multi-layer thin film assembly to expose a patternable layer on the semiconductor substrate. In operation 1906, the exposed patternable layer on the semiconductor substrate is developed.

[0234] According to other embodiments of the present disclosure, the thin film frame 242 can be formed by first forming a continuous layer of a carbon-based material (such as carbon nanotubes). For example, the techniques described above for forming the thin film 232 can be used to form a continuous layer of the carbon-based material. Such a layer can be processed by a cutting technique to remove a portion of the thin film 232 corresponding to the image region 235. Examples of cutting techniques include using a knife, blade, laser, or electron beam. According to another embodiment, the carbon-based material layer forming the thin film frame member 242 can be formed by directly depositing the carbon-based material onto the thin film border, and the deposition process can use chemical vapor deposition, physical vapor deposition, or atomic layer deposition processes performed in a furnace.

[0235] One aspect of the present disclosure relates to a method of forming a thin film assembly for extreme ultraviolet lithography. The method includes forming a first layer of a first carbon-based material on a filter membrane. In some embodiments, the first layer is a thin film frame or a thin film. The first layer of the first carbon-based material includes a first image region that contains or does not contain the first carbon-based material. The first layer of the first carbon-based material is separated from the filter membrane and densified. The densified first layer of the first carbon-based material is positioned over the filter membrane and a second layer of a second carbon-based material, which may be the same as or different from the first carbon-based material. The base material is collected on the densified first layer of the first carbon material. The second layer of the second carbon-based material includes a second image region, where when the first image region does not include the first carbon-based material, the second image region includes the second carbon-based material, or when the first image region includes the first carbon-based material, the second image region does not include the second carbon-based material. In some embodiments, the second layer is a thin film or a thin film frame. The method continues by densifying the second layer of the second carbon-based material.

[0236] One aspect of the present disclosure relates to a method of forming a thin film assembly for extreme ultraviolet lithography. The method includes collecting a first layer of a first carbon-based material on a filter membrane. The first layer of the first carbon-based material includes a first image region that contains the first carbon-based material. The first layer of the first carbon-based material is separated from the filter membrane and densified. According to the method, a portion of the first layer of the first carbon-based material is removed from the first image region. The densified first layer of the first carbon-based material with the portion removed from the first image region is positioned on the filter membrane. A second layer of a second carbon-based material, which may be the same as or different from the first carbon-based material, is collected on the densified first layer of the first carbon material. The second layer of the second carbon-based material includes a second image region, where the second image region includes the second carbon-based material. The second layer of the second carbon-based material is then densified.

[0237] Another aspect of the present disclosure relates to a lithography patterning method. The method utilizes a thin film assembly that includes a first layer of a first carbon-based material, the first layer including a first image region that contains or does not contain the first carbon-based material. The thin film assembly includes a second layer of a second carbon-based material, the second layer of the second carbon-based material including a second image region, where when the first image region does not contain the first carbon-based material, the second image region includes the second carbon-based material, or when the first image region includes the first carbon-based material, the second image region does not contain the second carbon-based material. The method includes reflecting EUV radiation onto a photoresist layer on a semiconductor substrate using a photomask, where the thin film assembly is secured to the photomask. The method includes developing the exposed photoresist layer and then etching a material layer through the patterned photoresist layer.

[0238] Another aspect of the present disclosure relates to a thin film assembly including a thin film border. The thin film border supports a thin film that includes a densified first layer of a carbon-based material. The densified first layer of the first carbon-based material includes a first image area that contains or does not contain the first carbon-based material. The thin film assembly further includes a thin film frame adjacent to the thin film. The thin film frame includes a densified second layer of a second carbon-based material. The densified second layer of the second carbon-based material includes a second image area, wherein when the first image area does not contain the first carbon-based material, the second image area includes the second carbon-based material, or when the first image area includes the first carbon-based material, the second image area does not contain the second carbon-based material. According to some aspects of the present disclosure, the thin film frame is adjacent to the thin film.

[0239] In some embodiments, it further includes forming a boron nitride nanotube layer on a combination of a first layer of a carbon-based material and a second layer of a carbon-based material. In some embodiments, it further includes forming an EUV wavelength absorbing material layer between the boron nitride nanotube layer and the combination of the first layer of the carbon-based material and the second layer of the carbon-based material, wherein the EUV wavelength absorbing material layer includes one or more materials selected from the group consisting of SiC, MoS2, MoSe2, WS2, WSe2, SnS2, SnS, ZrO2, ZrO, and TiO2. In some embodiments, it further includes forming a protective material layer on the combination of the first layer of the carbon-based material and the second layer of the carbon-based material, wherein the protective material layer includes one or more materials selected from the group consisting of SiC, SiON, SiN, Y2O3, TiO2, ZrO, RuO2, Ru, Ir, Pt, B4C, YF3, Ta, Nb, Nb2O5, Zr, Mo, MoO2, Fe, Ni, and Co. In some embodiments, it further includes forming an EUV wavelength absorbing material layer on the combination of the first layer of the carbon-based material and the second layer of the carbon-based material and the protective material layer, wherein the EUV wavelength absorbing material layer includes one or more materials selected from the group consisting of SiC, MoS2, MoSe2, WS2, WSe2, SnS2, SnS, ZrO2, ZrO, and TiO2. In some embodiments, it further includes forming a protective material layer on the combination of the first layer of the carbon-based material and the second layer of the carbon-based material, wherein the protective material layer includes one or more materials selected from the group consisting of SiC, SiON, SiN, Y2O3, TiO2, ZrO, RuO2, Ru, Ir, Pt, B4C, YF3, Ta, Nb, Nb2O5, Zr, Mo, MoO2, Fe, Ni, and Co. In some embodiments, it further includes forming a protective material layer on the combination of the first layer of the carbon-based material and the second layer of the carbon-based material, wherein the protective material layer includes one or more materials selected from the group consisting of SiC, SiON, SiN, Y2O3, TiO2, ZrO, RuO2, Ru, Ir, Pt, B4C, YF3, Ta, Nb, Nb2O5, Zr, Mo, MoO2, Fe, Ni, and Co. In some embodiments, separating the first layer of the carbon-based material from the filter membrane includes transferring the first layer of the carbon-based material to a film frame.

[0240] In some embodiments, removing the first layer of carbon-based material from the first image region includes cutting through the first layer of carbon-based material. In some embodiments, cutting through the first layer of carbon-based material includes cutting through the first layer of carbon-based material with a knife, laser, or electron beam. In some embodiments, further includes forming a boron nitride nanotube layer on the combination of the first layer of the first carbon-based material and the second layer of the second carbon-based material. In some embodiments, further includes forming a protective material layer on the combination of the first layer of the first carbon-based material and the second layer of the second carbon-based material, wherein the protective material layer includes one or more materials selected from the group consisting of SiC, SiON, SiN, Y2O3, TiO2, ZrO, RuO2, Ru, Ir, Pt, B4C, YF3, Ta, Nb, Nb2O5, Zr, Mo, MoO2, Fe, Ni, and Co. In some embodiments, further includes forming an EUV wavelength absorbing material layer between the boron nitride nanotube layer and the combination of the first layer of the first carbon-based material and the second layer of the second carbon-based material, wherein the EUV wavelength absorbing material layer includes one or more materials selected from the group consisting of SiC, MoS2, MoSe2, WS2, WSe2, SnS2, SnS, ZrO2, ZrO, TiO2. In some embodiments, further includes forming a protective material layer on the combination of the first layer of the first carbon-based material and the second layer of the second carbon-based material, wherein the protective material layer includes one or more materials selected from the group consisting of SiC, SiON, SiN, Y2O3, TiO2, ZrO, RuO2, Ru, Ir, Pt, B4C, YF3, Ta, Nb, Nb2O5, Zr, Mo, MoO2, Fe, Ni, and Co. In some embodiments, further includes forming a protective material layer on the combination of the first layer of the first carbon-based material and the second layer of the second carbon-based material, wherein the protective material layer includes one or more materials selected from the group consisting of SiC, SiON, SiN, Y2O3, TiO2, ZrO, RuO2, Ru, Ir, Pt, B4C, YF3, Ta, Nb, Nb2O5, Zr, Mo, MoO2, Fe, Ni, and Co.

[0241] In some embodiments, it further includes a boron nitride nanotube layer on the combination of the first layer of the first carbon-based material and the second layer of the second carbon-based material. In some embodiments, it further includes forming an EUV wavelength absorbing material layer between the boron nitride nanotube layer and the combination of the first layer of the first carbon-based material and the second layer of the second carbon-based material, wherein the EUV wavelength absorbing material layer includes one or more materials selected from the group consisting of SiC, MoS2, MoSe2, WS2, WSe2, SnS2, SnS, ZrO2, ZrO, and TiO2. In some embodiments, the EUV wavelength absorbing material layer is one or more of SiC, MoS2, MoSe2, WS2, WSe2, SnS2, SnS, ZrO2, ZrO, and TiO2 nanotubes.

[0242] Another aspect of the present disclosure relates to a thin film assembly including a thin film border, a thin film, and a thin film frame. The thin film is supported by the thin film border, wherein the thin film includes a first densified carbon base layer, and the first densified carbon base layer includes a first image area. The thin film frame is adjacent to the thin film, and the thin film frame includes a second densified carbon base layer, and the second densified carbon base layer includes a second image area.

[0243] In some embodiments, it further includes a boron nitride nanotube layer on the combination of the first densified carbon base layer and the second densified carbon base layer. In some embodiments, it further includes forming an EUV wavelength absorbing layer between the boron nitride nanotube layer and the combination of the first densified carbon base layer and the second densified carbon base layer. In some embodiments, the thin film frame is rectangular and includes four corners, and the corners have a rounded corner shape.

[0244] Another aspect of the present disclosure relates to a thin film assembly including a thin film border, a thin film, and a thin film frame. The thin film is supported by the thin film border, wherein the thin film includes a first densified carbon base layer, and the first densified carbon base layer includes a first image area. The thin film frame is located between the thin film and the thin film border, and the thin film frame includes a second densified carbon base layer, and the second densified carbon base layer includes a second image area, wherein the width of the contact between the thin film frame and the thin film border is equal to the width of the thin film border.

[0245] In some embodiments, the thin film frame has a rectangular cross-sectional shape. In some embodiments, the thin film frame has a straight trapezoidal cross-sectional shape.

[0246] Another aspect of the present disclosure relates to a thin film assembly, including a thin film border, a thin film, and a thin film frame. The thin film is supported by the thin film border, wherein the thin film includes a first densified carbon layer, and the first densified carbon layer includes a first image area. The thin film frame is located above the thin film such that the thin film is located between the thin film frame and the thin film border. The thin film frame includes a second densified carbon layer, and the second densified carbon layer includes a second image area, wherein the width of the contact between the thin film frame and the thin film is greater than the width of the contact between the thin film border and the thin film.

[0247] In some embodiments, the thin film frame has a rectangular cross-sectional shape. In some embodiments, the thin film frame has a straight trapezoidal cross-sectional shape.

[0248] The foregoing has outlined the features of several embodiments such that those skilled in the art may better understand the various aspects of the present disclosure. Those skilled in the art should understand that they can readily use the present disclosure as a basis for designing or modifying other processes and structures for achieving the same purposes and / or achieving the same advantages as the embodiments introduced herein. Those skilled in the art should also recognize that such equivalent constructs do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions, and alterations without departing from the spirit and scope of the present disclosure.

Claims

1. A thin film component, characterized in that, Comprising: A thin film border; A thin film supported by the thin film border, wherein the thin film comprises a first densified carbon base layer, and the first densified carbon base layer comprises a first image area; and A thin film frame adjacent to the thin film, the thin film frame comprises a second densified carbon base layer, and the second densified carbon base layer comprises a second image area.

2. The thin film component according to claim 1, wherein Further comprising a boron nitride nanotube layer on a combination of the first densified carbon base layer and the second densified carbon base layer.

3. The thin film component according to claim 2, wherein, Further comprising forming an EUV wavelength absorption layer between the boron nitride nanotube layer and the combination of the first densified carbon base layer and the second densified carbon base layer.

4. The thin film component according to claim 3, wherein The thin film frame is rectangular and includes four corners, and the corners have a rounded corner shape.

5. A thin film component, characterized in that, Comprising: A thin film border; A thin film supported by the thin film border, wherein the thin film comprises a first densified carbon base layer, and the first densified carbon base layer comprises a first image area; and A thin film frame located between the thin film and the thin film border, the thin film frame comprises a second densified carbon base layer, and the second densified carbon base layer comprises a second image area, wherein the width at the contact between the thin film frame and the thin film border is equal to the width of the thin film border.

6. The thin film component according to claim 5, wherein, The thin film frame has a rectangular cross-sectional shape.

7. The thin film component according to claim 5, characterized in that, The thin film frame has a right trapezoidal cross-sectional shape.

8. A thin film component, characterized in that, Comprising: A thin film border; A thin film supported by the thin film border, wherein the thin film comprises a first densified carbon base layer, and the first densified carbon base layer comprises a first image area; and A thin film frame located above the thin film such that the thin film is between the thin film frame and the thin film border, the thin film frame comprises a second densified carbon base layer, and the second densified carbon base layer comprises a second image area, wherein the width at the contact between the thin film frame and the thin film is greater than the width at the contact between the thin film border and the thin film.

9. The thin film component according to claim 8, wherein The thin film frame has a rectangular cross-sectional shape.

10. The thin film component according to claim 8, characterized in that, The thin film frame has a right trapezoidal cross-sectional shape.

Images