Power module and power conversion equipment

Abstract

The utility model provides a power module and power conversion equipment, and relates to the technical field of power electronics. The power module comprises a chip unit and a heat dissipation structure. The chip unit comprises a chip, an insulating plate and a plastic package structure. The chip, the insulating plate and the heat dissipation structure are stacked in a first direction; the insulating plate is connected with the chip, and a first metal layer, far away from the chip, of the insulating plate is connected with the heat dissipation structure through a first solder layer; wherein in the first direction, the surface, facing the insulating plate and connected with the first solder layer, of the heat dissipation structure is a first set surface, the end face, close to one end of the heat dissipation structure, of the plastic package structure is a second set surface, and the surface, away from the heat dissipation structure, of the first metal layer is a first surface; the distance between the first setting face and the second setting face is larger than or equal to the distance between the first setting face and the first surface.

Description

Technical Field

[0001] The present disclosure relates to the field of power electronics technology, and in particular to a power module and a power conversion device. Background Art

[0002] Power chips inevitably lose power during operation, and this lost power is typically converted into heat. To ensure the performance and reliability of power chips, heat dissipation structures, such as heat sinks or finned heat sinks, are typically used to facilitate heat conduction and dissipation. These heat dissipation structures effectively conduct heat away from the chip unit through contact with the chip unit, thereby improving the power chip's operating efficiency. In some technologies, soldering the copper layer under the DBC of the chip unit to the heat sink substrate can improve the chip's heat dissipation performance.

[0003] However, the plastic packaging structure layer in the chip unit may come into contact with the solder layer and affect the soldering quality. Utility Model Content

[0004] The present disclosure aims to solve, to a certain extent, the problem in the related art of how to improve the welding quality between the insulating plate of the chip unit and the heat dissipation structure.

[0005] To at least partially address at least one aspect of the above-mentioned problems, in a first aspect, the present disclosure provides a power module comprising a chip unit and a heat dissipation structure, wherein the chip unit comprises a chip, an insulating plate, and a plastic package structure; the chip, the insulating plate, and the heat dissipation structure are stacked in a first direction; the insulating plate is connected to the chip, and a first metal layer of the insulating plate, which is away from the chip, is connected to the heat dissipation structure via a first solder layer;

[0006] Wherein, in the first direction, the surface of the heat dissipation structure facing the insulating plate and connected to the first solder layer is a first setting surface, the end surface of the plastic package structure close to one end of the heat dissipation structure is a second setting surface, and the surface of the first metal layer facing away from the heat dissipation structure is a first surface;

[0007] The distance between the first setting surface and the second setting surface is greater than or equal to the distance between the first setting surface and the first surface.

[0008] Optionally, in the first direction, the surface of the insulating plate connected to the chip is the second surface; and the distance between the first setting surface and the second setting surface is less than or equal to the distance between the first setting surface and the second surface.

[0009] Optionally, in the first direction, a surface of the insulating layer of the insulating plate facing away from the heat dissipation structure is a third surface;

[0010] The distance between the first set surface and the second set surface is greater than or equal to the distance between the first set surface and the third surface.

[0011] Optionally, in the first direction, the surface of the insulating layer of the insulating board facing away from the heat dissipation structure is the third surface; the projection of the third surface on the set surface is configured to cover the projection of the first surface on the set surface, and the set surface is a plane perpendicular to the first direction.

[0012] Optionally, the projection of the second set surface on the set surface is configured to be covered by the projection of the third surface on the set surface.

[0013] In the power module described in the first aspect of the present disclosure, in the first direction, the surface of the heat dissipation structure facing the insulating board and connected to the first solder layer is the first set surface, the end face of the plastic encapsulation structure near the heat dissipation structure is the second set surface, the first metal layer of the insulating board is connected to the heat dissipation structure through the first solder layer, and the surface of the first metal layer facing away from the heat dissipation structure is the first surface. The distance between the first set surface and the second set surface is set to be greater than or equal to the distance between the first set surface and the first surface. Thus, the distance between the first set surface and the second set surface is greater than or equal to the sum of the thickness of the first metal layer and the thickness of the first solder layer. Even when the chip unit is welded to the heat dissipation structure through the first solder layer and there is an overflow and accumulation of the first solder layer at the edge position, the overflow solder of the first solder layer can be accommodated by using the height section below the second set surface, such as the height section corresponding to the first metal layer. Moreover, the greater the distance between the first set surface and the second set surface, the longer this height section, and the less likely the overflow solder of the first solder layer is to contact the plastic encapsulation structure, which can avoid the problem of affecting the welding quality due to the contact between the overflow solder and the plastic encapsulation structure. Generally speaking, the functional module of the present disclosure can ensure the welding quality of the chip unit and the heat dissipation structure, can avoid abnormal situations such as cracking of the plastic encapsulation structure due to uneven local heat absorption, and can also avoid the contact between the plastic encapsulation structure and the first solder layer, which may cause uneven heat absorption of the solder, affect the fluidity of the solder, and result in uneven welding thickness, thus avoiding affecting the operation accuracy of subsequent processes such as crimping.

[0014] In a second aspect, the present disclosure provides a power module, including a chip unit and a heat dissipation structure. The chip unit includes a chip, an insulating board, and a plastic encapsulation structure; the chip, the insulating board, and the heat dissipation structure are stacked in a first direction; the insulating board is connected to the heat dissipation structure through a first solder layer;

[0015] The heat dissipation structure has a first set surface and a peripheral side surface disposed around the first set surface; in the first direction, the first set surface faces the insulating board, and the first set surface is connected to the first solder layer; one end of the peripheral side surface is connected to the first set surface, and the other end extends away from the insulating board.

[0016] The projection of the first set surface on the set surface is configured to be covered by the projection of the encapsulation structure on the set surface, and the set surface is a plane perpendicular to the first direction.

[0017] Optionally, the projection of the chip on the set surface is configured to be covered by the projection of the first set surface on the set surface.

[0018] Optionally, the first metal layer of the insulating board away from the chip is connected to the heat dissipation structure through the first solder layer, and the insulating layer of the insulating board is connected to the first metal layer;

[0019] The projection of the insulating layer on the set surface is configured to be covered by the projection of the encapsulation structure on the set surface, and the projection of the first set surface on the set surface is configured to be covered by the projection of the insulating layer on the set surface.

[0020] Optionally, an annular groove is formed on the end face of the heat dissipation structure near the insulating board, the portion of the end face of the heat dissipation structure enclosed by the annular groove forms the first set surface, and the inner side wall of the annular groove in the radial direction forms the peripheral side surface.

[0021] Optionally, in the first direction, the end face of the encapsulation structure near the heat dissipation structure is the second set surface, the first metal layer of the insulating board away from the chip is connected to the heat dissipation structure through the first solder layer, and the surface of the first metal layer facing away from the heat dissipation structure is the first surface;

[0022] The distance between the first set surface and the second set surface is greater than or equal to the distance between the first set surface and the first surface.

[0023] In the power module according to the second aspect of the present disclosure, the heat dissipation structure has a first set surface and a peripheral side surface surrounding the first set surface. For example, the heat dissipation structure is formed with a first boss. The end surface of the first boss in the first direction forms the first set surface, and the circumferential surface of the first boss forms the peripheral side surface. Thus, when there is a possibility of solder overflow due to an excessive amount of solder in the first solder layer, the overflowing solder has the possibility of flowing outward in the horizontal direction and the possibility of reducing upward stacking. The projection of the first set surface on the set surface is configured to be covered by the projection of the plastic encapsulation structure on the set surface. The set surface is a plane perpendicular to the first direction, so that the solder flowing outward in the horizontal direction flows downward from the peripheral side surface, reducing the possibility of the stacked height of the overflowing solder. Thus, the possibility of contact between the overflowing solder of the first solder layer and the plastic encapsulation structure is reduced, thereby ensuring the welding quality of the chip unit and the heat dissipation structure, avoiding abnormalities such as cracking of the plastic encapsulation structure due to uneven local heat, and avoiding contact between the plastic encapsulation structure and the first solder layer, which may cause uneven heat of the solder and affect the fluidity of the solder, resulting in uneven welding thickness, and avoiding affecting the operation accuracy of subsequent processes such as crimping.

[0024] In a third aspect, the present disclosure provides a power conversion device, including the power module according to the first aspect above; and / or, including the power module according to the second aspect above.

[0025] Optionally, the heat dissipation structure of the power module includes at least one of a heat pipe and a fin radiator. When the heat dissipation structure includes the heat pipe and the fin radiator, the heat pipe is connected to the first solder layer of the power module, and the heat pipe is connected to the fin radiator.

[0026] Optionally, the number of chip units of the power module is multiple, and the multiple chip units are respectively connected to the heat dissipation structure of the power module through corresponding first solder layers.

[0027] The power conversion device according to the third aspect of the present disclosure has the beneficial effects of the power module according to the first aspect of the present disclosure, and / or, has the beneficial effects of the power module according to the second aspect of the present disclosure, which will not be elaborated here. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 is a schematic structural diagram of a power module in the first embodiment of the present disclosure;

[0029] Figure 2 is a schematic structural diagram of a power module in the second embodiment of the present disclosure;

[0030] Figure 3 is a schematic structural diagram of a power module in the third embodiment of the present disclosure;

[0031] Figure 4Schematic diagram of the power module in the fourth embodiment of the present disclosure;

[0032] Figure 5 Schematic diagram of the power module in the fifth embodiment of the present disclosure;

[0033] Figure 6 Schematic diagram of the power module in the sixth embodiment of the present disclosure;

[0034] Figure 7 Schematic diagram of the power module in the seventh embodiment of the present disclosure;

[0035] Figure 8 Schematic diagram of the power module in the eighth embodiment of the present disclosure;

[0036] Figure 9 Schematic diagram of the power module in the ninth embodiment of the present disclosure;

[0037] Figure 10 Schematic diagram of the structure in the embodiment of the present disclosure where multiple chip units are connected to a heat dissipation structure and the heat dissipation structure includes a heat pipe;

[0038] Figure 11 Schematic diagram of the structure in the embodiment of the present disclosure where multiple chip units are connected to a heat dissipation structure and the heat dissipation structure includes a fin radiator;

[0039] Figure 12 Schematic diagram of the structure in the embodiment of the present disclosure where multiple chip units are connected to a heat dissipation structure and the heat dissipation structure includes a heat pipe and a fin radiator.

[0040] Explanation of reference numerals:

[0041] 1 - Chip unit; 11 - Chip; 12 - Insulating board; 121 - First metal layer; 122 - Insulating layer; 123 - Second metal layer; 13 - Plastic encapsulation structure; 2 - Heat dissipation structure; 21 - Body; 22 - First boss; 23 - Annular groove; 2A - Heat pipe; 2B - Fin radiator; 3 - First solder layer; SA - First set surface; SB - Second set surface; SC - Peripheral side surface; S1 - First surface; S2 - Second surface; S3 - Third surface. Detailed description of the specific implementation

[0042] To make the above objects, features, and advantages of the present disclosure more apparent and understandable, the following provides a detailed description of the specific embodiments of the present disclosure with reference to the accompanying drawings.

[0043] In the description of the present disclosure, it should be noted that unless otherwise clearly specified and defined, the terms "installed", "connected", and "coupled" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be directly connected or indirectly connected through an intermediate medium. For those of ordinary skill in the art, the specific meanings of the above terms in the present disclosure can be understood according to specific circumstances.

[0044] In the description of this specification, the descriptions with reference to terms such as "embodiment", "one embodiment", "some embodiments", "exemplarily", and "one embodiment" mean that the specific features, structures, materials, or characteristics described in connection with the embodiment or embodiment are included in at least one embodiment or embodiment of the present disclosure. In this specification, the schematic descriptions of the above terms do not necessarily refer to the same embodiment or embodiment. Moreover, the specific features, structures, materials, or characteristics described can be combined in a suitable manner in any one or more embodiments or embodiments.

[0045] The terms "first", "second", etc. are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" can explicitly or implicitly include at least one of such features.

[0046] As Figures 1 to 3 shown, the present disclosure provides a power module (which can be defined as the first type of power module for easy distinction), which includes a chip unit 1 and a heat dissipation structure 2. The chip unit 1 includes a chip 11, an insulating board 12, and a plastic package structure 13; the chip 11, the insulating board 12, and the heat dissipation structure 2 are stacked in a first direction; the insulating board 12 is connected to the chip 11, and the first metal layer 121 of the insulating board 12 away from the chip 11 is connected to the heat dissipation structure 2 through a first solder layer 3;

[0047] Wherein, in the first direction, the surface of the heat dissipation structure 2 facing the insulating board 12 and connected to the first solder layer 3 is a first set surface SA, the end face of the plastic package structure 13 close to the heat dissipation structure 2 is a second set surface SB, and the surface of the first metal layer 121 facing away from the heat dissipation structure 2 is a first surface S1;

[0048] The distance between the first set surface SA and the second set surface SB is greater than or equal to the distance between the first set surface SA and the first surface S1.

[0049] In this specification, the first direction is consistent with the up-down direction, and the second direction is consistent with the horizontal direction, such as the left-right direction. The chip 11, the insulating board 12, and the heat dissipation structure 2 are distributed in sequence from top to bottom. The first surface S1 can be understood as the upper surface of the first metal layer 121 (or also understood as the lower surface of the insulating layer 122). However, it should be understood that on the basis of not violating the technical concept of the present disclosure, it is not limited thereto.

[0050] It should be noted that the insulating board 12, also known as the substrate or packaging substrate, has one or more of the following functions when connected to the chip 11. The insulating board 12 provides necessary mechanical support for the chip 11, enabling it to withstand physical stress and pressure, and ensuring insulation between the chip 11 and external components such as the heat dissipation structure 2. The conductive paths (such as copper wires or pads) on the insulating board 12 can connect the pins or solder joints of the chip 11 to achieve electrical connection with the external circuit. The insulating board 12 can help dissipate the heat generated by the chip 11 during operation, prevent overheating, and improve the stability and lifespan of the chip 11. The insulating board 12 is a part of the chip unit 1, and the chip unit 1 with the insulating board 12 is more easily installed in an electronic device. The insulating board 12 helps standardize the size of the chip 11, enabling different chips 11 to be adapted to the same packaging type, which is convenient for unified design and manufacturing.

[0051] The material and design of the insulating board 12 can vary according to the specific requirements and application scenarios of the chip 11. Common materials for the insulating board 12 include organic materials, ceramics, and metals, etc. In this specification, taking the insulating board 12 as a three-layer structure, in the first direction and in the direction from the chip 11 to the heat dissipation structure 2, this three-layer structure is the second metal layer 123, the insulating layer 122, and the first metal layer 121 in sequence as an example for illustration. Specifically, the insulating board 12 is a DBC substrate, that is, a direct bond copper ceramic substrate. In this case, in the first direction, the first metal layer 121 of the insulating board 12 far from the chip 11 is connected to the heat dissipation structure 2 through the first solder layer 3, and the second metal layer 123 of the insulating board 12 close to the chip 11 is connected to the chip 11. However, it should be understood that the structure of the insulating board 12 is not limited thereto, and details are not described herein.

[0052] The chip 11 and the insulating board 12 are usually connected by soldering. For example, the second metal layer 123 of the chip 11 and the insulating board 12 is connected by soldering through a second solder layer. The plastic encapsulation structure 13 usually encapsulates the connected chip 11 and insulating board 12 to form a protection for the chip 11. After the encapsulation is completed, the plastic encapsulation structure 13 can protect the chip 11 from physical damage and environmental factors (such as humidity, dust, etc.). The plastic encapsulation structure 13 is usually formed of epoxy resin. After the encapsulation is completed, the chip 11, the insulating board 12, and the plastic encapsulation structure 13 form an integral structure. At this time, the lower surface of the first metal layer 121 of the insulating board 12 is usually exposed, facilitating the subsequent connection of the first metal layer 121 to the heat dissipation structure 2 through a first solder layer 3.

[0053] The heat dissipation structure 2 is responsible for effectively conducting and dissipating the heat generated by the chip 11 during operation, so as to prevent the chip 11 and the connected insulating board 12, etc. from failing due to overheating and ensure the reliable performance of the device. The heat dissipation structure 2 may include a heat pipe 2A and a fin radiator 2B described later. Of course, other related technologies can also be adopted.

[0054] It should be noted that when connecting through the first solder layer 3, the amount of solder used (such as solder paste) usually has a certain margin and may have a certain fluctuation. There is a possibility that excess solder overflows from the edge of the joint area between the first metal layer 121 and the heat dissipation structure 2. These overflowed solders have the possibility of piling up at the edge of the joint area. That is to say, the excess solder of the first solder layer 3 has the possibility of overflowing to the plastic encapsulation structure 13. Since the plastic encapsulation structure 13 usually uses insulating materials such as plastics, when the overflowed solder contacts the plastic encapsulation structure 13, the heat generated during soldering has multiple heat transfer paths to the plastic encapsulation structure 13. For example, there may be a first heat transfer path and a second heat transfer path. The first heat transfer path is: the first solder layer 3 - the insulating board 12 - the chip 11 - the plastic encapsulation structure 13, and the second heat transfer path is: the first solder layer 3 - the plastic encapsulation structure 13. The thermal conductivities of the first heat transfer path and the second heat transfer path are different, which may cause abnormal conditions such as cracking at the connection between the plastic encapsulation structure 13 and the chip 11 or the insulating board 12 due to local uneven heating, affecting the encapsulation effect of the plastic encapsulation structure 13 and the waterproof and moisture-proof performance of the chip 11. In addition, since the material of the plastic encapsulation structure 13 is usually different from that of the insulating board 12, if the solder of the first solder layer 3 contacts the plastic encapsulation structure 13 during the soldering process, the plastic encapsulation structure 13 may cause uneven heating of the solder, affecting the solder fluidity, resulting in uneven soldering thickness, and causing the overall flatness of the power module to not meet the standard, affecting the operation accuracy of subsequent processes such as crimping.

[0055] Such as Figure 2In the second embodiment shown, the distance between the first setting surface SA and the second setting surface SB is equal to the distance between the first setting surface SA and the first surface S1 (i.e., the upper surface of the first metal layer 121). In this case, the second setting surface SB is flush with the first surface S1 (i.e., the upper surface of the first metal layer 121).

[0056] Thus, in the first direction, the surface of the heat dissipation structure 2 facing the insulating plate 12 and connected to the first solder layer 3 is the first setting surface SA, the end surface of the encapsulation structure 13 near the heat dissipation structure 2 is the second setting surface SB, the first metal layer 121 of the insulating plate 12 is connected to the heat dissipation structure 2 through the first solder layer 3, and the surface of the first metal layer 121 facing away from the heat dissipation structure 2 is the first surface S1. The distance between the first setting surface SA and the second setting surface SB is set to be greater than or equal to the distance between the first setting surface SA and the first surface S1, so that the distance between the first setting surface SA and the second setting surface SB is greater than or equal to the sum of the thickness of the first metal layer 121 and the thickness of the first solder layer 3. Even when there is an overflow of the first solder layer 3 at the edge position during welding the chip unit 1 to the heat dissipation structure 2 through the first solder layer 3, the overflow solder of the first solder layer 3 can be accommodated by the height section below the second setting surface SB, for example, the height section corresponding to the first metal layer 121. Moreover, the greater the distance between the first setting surface SA and the second setting surface SB, the longer this height section, and the smaller the possibility that the overflow solder of the first solder layer 3 contacts the encapsulation structure 13, which can avoid the problem of affecting the welding quality due to the contact between the overflow solder and the encapsulation structure 13. Generally speaking, the functional module of the present disclosure can ensure the welding quality of the chip unit 1 and the heat dissipation structure 2, can avoid abnormal conditions such as cracking of the encapsulation structure 13 due to uneven local heat, and can also avoid the contact between the encapsulation structure 13 and the first solder layer 3, which causes uneven heat of the solder, affects the fluidity of the solder, and results in uneven welding thickness, thus avoiding affecting the operation accuracy of subsequent processes such as crimping.

[0057] As Figures 1 to 3 shown, optionally, in the first direction, the surface of the insulating plate 12 connected to the chip 11 is the second surface S2; the distance between the first setting surface SA and the second setting surface SB is less than or equal to the distance between the first setting surface SA and the second surface S2.

[0058] Specifically, the second surface S2 can be understood as the surface of the second metal layer 123 facing away from the heat dissipation structure, that is, the second surface S2 can be understood as the upper surface of the second metal layer 123.

[0059] As Figure 1In the first embodiment shown, the distance between the first setting surface SA and the second setting surface SB is equal to the distance between the first setting surface SA and the second surface S2.

[0060] Specifically, in the first embodiment, it is shown that the top surface of the heat dissipation structure 2 is a plane, the first setting surface SA is this plane, and the second setting surface SB of the plastic package structure 13 is connected to the second surface S2 (i.e., the upper surface of the second metal layer 123). In this case, the second setting surface SB is flush with the second surface S2, and the plastic package structure 13 can ensure the plastic packaging performance of the chip 11.

[0061] In this way, the surface of the second metal layer 123 facing away from the heat dissipation structure 2 is the second surface S2. By setting the distance between the first setting surface SA and the second setting surface SB to be less than or equal to the distance between the first setting surface SA and the second surface S2, it can be ensured that the lower end of the plastic package structure 13 does not protrude above the upper surface of the insulating board 12, which can ensure the plastic packaging performance of the plastic package structure 13 for the chip 11 and ensure the waterproof and dustproof performance of the chip 11.

[0062] As Figure 3 and Figure 4 shown, optionally, in the first direction, the surface of the insulating layer 122 of the insulating board 12 facing away from the heat dissipation structure 2 is the third surface S3;

[0063] The distance between the first setting surface SA and the second setting surface SB is greater than or equal to the distance between the first setting surface SA and the third surface S3.

[0064] As Figure 3 shown in the third embodiment of the present disclosure and Figure 4 shown in the fourth embodiment of the present disclosure, the distance between the first setting surface SA and the second setting surface SB is equal to the distance between the first setting surface SA and the third surface S3.

[0065] This setting method can further increase the height segment below the second setting surface SB, thereby further reducing the possibility of the first solder layer 3 contacting the plastic package structure 13 and ensuring the welding quality.

[0066] As Figure 4 shown, optionally, in the first direction, the surface of the insulating layer 122 of the insulating board 12 facing away from the heat dissipation structure 2 is the third surface S3; the projection of the third surface S3 on the setting surface is configured to cover the projection of the first surface S1 on the setting surface, and the setting surface is a plane perpendicular to the first direction.

[0067] The setting surface can be a virtual plane that is perpendicular to the first direction and parallel to the second direction.

[0068] AsFigure 4 In the fourth embodiment shown, the cross-sectional dimension of the insulating layer 122 in the horizontal cross-section is larger than the dimension of the first metal layer 121 in the horizontal cross-section, and the circumferential edge of the insulating layer 122 protrudes beyond the circumferential edge of the first metal layer 121.

[0069] In this way, a stop can be formed by using the insulating layer 122, reducing the possibility of the overflow solder of the first solder layer 3 coming into contact with the plastic encapsulation structure 13.

[0070] As Figure 4 shown, further, the projection of the second set surface SB on the set surface is configured to be covered by the projection of the third surface S3 on the set surface.

[0071] As Figure 4 shown, in this case, the second set surface SB of the plastic encapsulation structure 13 is connected to the third surface S3 of the insulating layer 122.

[0072] In this way, on the basis of reducing the possibility of the plastic encapsulation structure 13 coming into contact with the overflow solder of the first solder layer 3, it is possible to avoid the size of the plastic encapsulation structure 13 in the horizontal cross-section from being too large and the size of the chip unit 1 from being too large.

[0073] As Figures 10 to 12 shown, in the above embodiment, optionally, the heat dissipation structure 2 includes at least one of a heat pipe 2A (refer to Figure 10 ) and a fin heat sink 2B (refer to Figure 11 );

[0074] When the heat dissipation structure 2 includes a heat pipe 2A and a fin heat sink 2B, the heat pipe 2A is connected to the first solder layer 3, and the heat pipe 2A is connected to the fin heat sink 2B.

[0075] As Figure 10 shown, specifically, in some scenarios, the chip unit 1 is connected to the heat pipe 2A through the first solder layer 3, and then connected to an external component (the external component is not shown) through the heat pipe 2A.

[0076] As Figure 11 shown, in some scenarios, the chip unit 1 is connected to the fin heat sink 2B through the first solder layer 3.

[0077] As Figure 12 shown, in some scenarios, after the chip unit 1 is connected to the heat pipe 2A through the first solder layer 3, the heat pipe 2A is then connected to the fin heat sink 2B.

[0078] In this way, the chip unit 1 can enhance heat dissipation, with a simple structure and strong practicability.

[0079] Further, the specific setting manner of the heat pipe 2A can adopt related technologies, and the heat pipe 2A can be any one of a solid metal plate, a hollow metal plate, a two-phase liquid flow heat pipe, and a solid heat pipe.

[0080] The two-phase liquid flow heat pipe can be any one of a columnar heat pipe and a channel heat pipe, which will not be elaborated here.

[0081] Optionally, the number of the chip units 1 is multiple, and the multiple chip units 1 are respectively connected to the heat dissipation structure 2 through corresponding first solder layers 3.

[0082] As Figure 10 shown, it shows the situation where multiple chip units 1 are respectively connected to the heat pipe 2A through corresponding first solder layers 3.

[0083] In this case, the heat dissipation structure 2 can dissipate heat from the multiple chip units 1, which will not be elaborated here.

[0084] As Figures 5 to 9 shown, the present disclosure also provides another power module (which can be defined as the second power module for easy distinction). The power module includes a chip unit 1 and a heat dissipation structure 2. The chip unit 1 includes a chip 11, an insulating board 12, and a plastic encapsulation structure 13; the chip 11, the insulating board 12, and the heat dissipation structure 2 are stacked in a first direction; the insulating board 12 is connected to the heat dissipation structure 2 through a first solder layer 3;

[0085] The heat dissipation structure 2 has a first set surface SA and a peripheral side surface SC surrounding the first set surface SA; in the first direction, the first set surface SA faces the insulating board 12 and is connected to the first solder layer 3; one end of the peripheral side surface SC is connected to the first set surface SA, and the other end extends away from the insulating board 12;

[0086] The projection of the first set surface SA on the set surface is configured to be covered by the projection of the plastic encapsulation structure 13 on the set surface, and the set surface is a plane perpendicular to the first direction.

[0087] Similar to the corresponding embodiment of the above first power module, in the second power module, the first direction is consistent with the up and down direction, and the set surface can be understood as a horizontal plane.

[0088] It should be understood that the position and coverage range of the first set surface SA in space are defined by the peripheral side surface SC. As long as the heat dissipation structure 2 has the first set surface SA and the peripheral side surface SC conforming to the above characteristics, on this basis, its forming manner is not limited.

[0089] In some scenarios, such as Figure 5As shown, a first boss 22 is formed at one end of the body 21 of the heat dissipation structure 2 close to the insulating plate 12. A first set surface SA is formed on the end surface of the first boss 22 in the first direction, and a circumferential side surface SC is formed on the circumferential surface of the first boss 22. That is, the heat dissipation structure 2 has at least two stepped surfaces facing the insulating plate 12, and the stepped surface located inside in the second direction is the first set surface SA. In this case, setting the first boss 22 can satisfy the flow guidance of the overflow solder of the first solder layer 3, reducing the possibility of the solder of the first solder layer 3 contacting the encapsulation structure 13. The structure is simple and has strong practicability.

[0090] In some scenarios, such as Figure 9 As shown, an annular groove 23 is formed on the end surface of one end of the body 21 of the heat dissipation structure 2 close to the insulating plate 12. The part surrounded by the annular groove 23 on the end surface of the heat dissipation structure 2 forms the first set surface SA, and the inner side wall of the annular groove 23 in the radial direction forms the circumferential side surface SC. In this case, the annular groove 23 can be used to accommodate the overflow solder of the first solder layer 3, reducing the possibility of the overflow solder of the first solder layer 3 piling up upward and contacting the encapsulation structure 13.

[0091] Such as Figure 5 As shown, in the fifth embodiment of the present disclosure, a situation where the projection of the first set surface SA on the set surface completely coincides with the projection of the encapsulation structure 13 on the set surface is shown. In this case, the circumferential edge formed by the connection of the first set surface SA and the circumferential side surface SC coincides with the circumferential edge of the chip unit 1 in the up and down direction in projection.

[0092] The insulating plate 12 can adopt related technologies, such as the technology adopted in the above-mentioned first power module. Specifically, in the first direction and from the chip 11 to the heat dissipation structure 2, the insulating plate 12 includes a second metal layer 123, an insulating layer 122, and a first metal layer 121. The first metal layer 121 of the insulating plate 12 away from the chip 11 is connected to the heat dissipation structure 2 through the first solder layer 3, and the second metal layer 123 of the insulating plate 12 close to the chip 11 is connected to the chip 11.

[0093] Thus, the heat dissipation structure 2 has a first set surface SA and a peripheral side surface SC disposed around the first set surface SA. For example, the heat dissipation structure 2 is formed with a first boss 22. The end surface of the first boss 22 in the first direction forms the first set surface SA, and the circumferential surface of the first boss 22 forms the peripheral side surface SC. Thus, when there is a possibility of solder overflow due to an excessive amount of solder in the first solder layer 3, the overflowing solder has the possibility of flowing outward in the horizontal direction and the possibility of reducing the upward stacking height. The projection of the first set surface SA on the set surface is configured to be covered by the projection of the encapsulation structure 13 on the set surface. The set surface is a plane perpendicular to the first direction, so that the solder flowing outward in the horizontal direction flows downward from the peripheral side surface SC, reducing the possibility of the stacking height of the overflowing solder, thereby reducing the possibility of contact between the overflowing solder of the first solder layer 3 and the encapsulation structure 13, and thus ensuring the welding quality of the chip unit 1 and the heat dissipation structure 2, avoiding abnormalities such as cracking of the encapsulation structure 13 due to uneven local heat absorption, and avoiding contact between the encapsulation structure 13 and the first solder layer 3, which may cause uneven heat absorption of the solder and affect the fluidity of the solder, resulting in uneven welding thickness, and avoiding affecting the operation accuracy of subsequent processes such as crimping.

[0094] That is to say, both the first power module and the second power module of the present disclosure are provided with a design for reducing the possibility of contact between the overflowing solder of the first solder layer 3 and the encapsulation structure 13.

[0095] As Figures 5 to 9 shown, optionally, the projection of the chip 11 on the set surface is configured to be covered by the projection of the first set surface SA on the set surface.

[0096] As Figure 6 shown, in the sixth embodiment of the present disclosure, it shows a case where the outer edge of the chip 11 is exactly corresponding to the edge of the first set surface SA. Specifically, Figure 6 in, the left edge of the leftmost chip 11 corresponds to the left edge of the first set surface SA, the right edge of the rightmost chip 11 corresponds to the right edge of the first set surface SA, and so on. The front edge of the frontmost chip 11 corresponds to the front edge of the first set surface SA, and the rear edge of the rearmost chip 11 corresponds to the rear edge of the first set surface SA.

[0097] Thus, the total area of the projection of the chip 11 on the set surface is less than or equal to the area of the projection of the first set surface SA on the set surface, which is beneficial to ensuring that the first set surface SA and the first welding layer have sufficient contact surfaces, thereby ensuring the heat dissipation performance of the heat dissipation structure 2 for dissipating heat from the chip 11 through the insulating plate 12.

[0098] Optionally, the first metal layer 121 of the insulating board 12 away from the chip 11 is connected to the heat dissipation structure 2 through the first solder layer 3. The insulating layer 122 of the insulating board 12 is connected to the first metal layer 121. The projection of the insulating layer 122 on the set surface covers the projection of the plastic package structure 13 on the set surface, and the projection of the first set surface SA on the set surface is configured to be covered by the projection of the insulating layer 122 on the set surface.

[0099] Specifically, as Figure 7 shown in the seventh embodiment, the circumferential edge of the insulating layer 122 corresponding to the circumferential edge of the first set surface SA is shown.

[0100] As Figure 7 shown, the projection of the first metal layer 121 on the set surface completely coincides with the projection of the insulating layer 122 on the set surface. In this case, when there is overflow solder in the first solder layer 3, it is convenient for the overflow solder to flow out quickly from the circumferential side surface SC, reducing the possibility of the solder in the first solder layer 3 contacting the plastic package structure 13.

[0101] As Figure 8 shown in the eighth embodiment, it schematically shows the situation where the circumferential edge of the insulating layer 122 corresponds to the circumferential edge of the first set surface SA, and the projected area of the first metal layer 121 on the set surface is smaller than the projected area of the insulating layer 122 on the set surface. In this case, the insulating layer 122 can, to a certain extent, form a barrier to the upward stacking of the overflow solder in the first solder layer 3, ensuring that the overflow solder in the first solder layer 3 quickly flows out from the circumferential side surface SC, reducing the possibility of the solder in the first solder layer 3 contacting the plastic package structure 13.

[0102] As Figures 10 to 12 shown, in the above embodiments, optionally, the heat dissipation structure 2 includes at least one of a heat pipe 2A (refer to Figure 10 ) and a fin radiator 2B (refer to Figure 11 );

[0103] When the heat dissipation structure 2 includes a heat pipe 2A and a fin radiator 2B, the heat pipe 2A is connected to the first solder layer 3, and the heat pipe 2A is connected to the fin radiator 2B.

[0104] As Figure 10 shown, specifically, in some scenarios, the chip unit 1 is connected to the heat pipe 2A through the first solder layer 3, and then connected to an external component (the external component is not shown) through the heat pipe 2A.

[0105] As Figure 11 shown, in some scenarios, the chip unit 1 is connected to the fin radiator 2B through the first solder layer 3.

[0106] As Figure 12As shown, in some scenarios, after the chip unit 1 is connected to the heat pipe 2A through the first solder layer 3, the heat pipe 2A is then connected to the fin radiator 2B.

[0107] In this way, the chip unit 1 can enhance heat dissipation, with a simple structure and strong practicability.

[0108] Furthermore, the specific setting method of the heat pipe 2A can adopt related technologies, and the heat pipe 2A can be any one of a solid metal plate, a hollow metal plate, a two-phase liquid flow heat pipe, and a solid heat pipe.

[0109] The two-phase liquid flow heat pipe can include any one of a columnar heat pipe and a channel heat pipe, which will not be elaborated here in detail.

[0110] Optionally, the number of chip units 1 is multiple, and the multiple chip units 1 are respectively connected to the heat dissipation structure 2 through the corresponding first solder layers 3.

[0111] As Figure 10 shown, it shows the situation where multiple chip units 1 are respectively connected to the heat pipe 2A through the corresponding first solder layers 3.

[0112] In this case, the heat dissipation structure 2 can dissipate heat from the multiple chip units 1, which will not be elaborated here in detail.

[0113] In a further alternative solution, the second power module has the structural design of the first power module to prevent the first solder layer 3 from contacting the plastic package structure 13.

[0114] As Figure 8 shown, exemplarily, in the first direction, the end face of the plastic package structure 13 close to the heat dissipation structure 2 is the second set face SB, the first metal layer 121 of the insulating plate 12 far from the chip 11 is connected to the heat dissipation structure 2 through the first solder layer 3, and the surface of the first metal layer 121 facing away from the heat dissipation structure 2 is the first surface S1;

[0115] The distance between the first set face SA and the second set face SB is greater than or equal to the distance between the first set face SA and the first surface S1.

[0116] That is to say, without violating the design concept of the second power module, the second power module can have some of the above structural designs of the first power module to further reduce the possibility of the first solder layer 3 contacting the plastic package structure 13, which will not be elaborated one by one here.

[0117] In some scenarios, the power conversion device provided by the embodiments of the present disclosure includes the above first power module.

[0118] In some scenarios, the power conversion device provided by the embodiments of the present disclosure includes the above-mentioned second power module.

[0119] In some scenarios, the power conversion device provided by the embodiments of the present disclosure includes the above-mentioned first power module and the above-mentioned second power module. It should be understood that when the power conversion device includes the first power module and the second power module, the first power module and the second power module may share the heat dissipation structure 2 or may adopt different heat dissipation structures 2, which will not be elaborated here.

[0120] It should be understood that the power conversion device may be a device such as a photovoltaic energy storage converter or an inverter. The power conversion device has all the beneficial effects of the first power module and / or the second power module, which will not be elaborated here.

[0121] The power system provided by the present disclosure includes the power electronic device of the above-mentioned embodiment, or includes the power module of the above-mentioned embodiment. For example, it is a photovoltaic system or an energy storage system, etc.

[0122] Although the present disclosure is disclosed as above, the protection scope of the present disclosure is not limited thereto. Those skilled in the art can make various changes and modifications without departing from the spirit and scope of the present disclosure, and these changes and modifications will all fall within the protection scope of the present disclosure.

Claims

1. A power module, characterized in that, The invention comprises a chip unit (1) and a heat dissipation structure (2), wherein the chip unit (1) comprises a chip (11), an insulating plate (12) and a plastic packaging structure (13); the chip (11), the insulating plate (12) and the heat dissipation structure (2) are stacked in a first direction; the insulating plate (12) is connected to the chip (11), and a first metal layer (121) of the insulating plate (12) away from the chip (11) is connected to the heat dissipation structure (2) via a first solder layer (3); Wherein, in the first direction, the surface of the heat dissipation structure (2) facing the insulating plate (12) and connected to the first solder layer (3) is a first setting surface (SA), the end surface of the plastic packaging structure (13) close to one end of the heat dissipation structure (2) is a second setting surface (SB), and the surface of the first metal layer (121) facing away from the heat dissipation structure (2) is a first surface (S1); The distance between the first setting surface (SA) and the second setting surface (SB) is greater than or equal to the distance between the first setting surface (SA) and the first surface (S1).

2. The power module according to claim 1, characterized in that, In the first direction, the surface of the insulating plate (12) connected to the chip (11) is the second surface (S2); the distance between the first setting surface (SA) and the second setting surface (SB) is less than or equal to the distance between the first setting surface (SA) and the second surface (S2).

3. The power module according to claim 1, characterized in that, In the first direction, the surface of the insulating layer (122) of the insulating plate (12) facing away from the heat dissipation structure (2) is a third surface (S3); The distance between the first setting surface (SA) and the second setting surface (SB) is greater than or equal to the distance between the first setting surface (SA) and the third surface (S3).

4. The power module according to claim 1, characterized in that, In the first direction, the surface of the insulating layer (122) of the insulating plate (12) facing away from the heat dissipation structure (2) is a third surface (S3); the projection of the third surface (S3) on a set surface is configured to cover the projection of the first surface (S1) on the set surface, and the set surface is a plane perpendicular to the first direction.

5. The power module according to claim 4, characterized in that, The projection of the second setting surface (SB) on the setting surface is configured to be covered by the projection of the third surface (S3) on the setting surface.

6. A power module, characterized in that, The invention comprises a chip unit (1) and a heat dissipation structure (2), wherein the chip unit (1) comprises a chip (11), an insulating plate (12) and a plastic packaging structure (13); the chip (11), the insulating plate (12) and the heat dissipation structure (2) are stacked in a first direction; the insulating plate (12) is connected to the heat dissipation structure (2) via a first solder layer (3); The heat dissipation structure (2) has a first set surface (SA) and a peripheral side surface (SC) disposed around the first set surface (SA); in the first direction, the first set surface (SA) faces the insulating plate (12), and the first set surface (SA) is connected to the first solder layer (3); one end of the peripheral side surface (SC) is connected to the first set surface (SA), and the other end extends away from the insulating plate (12). The projection of the first set surface (SA) on the set surface is configured to be covered by the projection of the encapsulation structure (13) on the set surface, and the set surface is a plane perpendicular to the first direction.

7. The power module according to claim 6, characterized in that, The projection of the chip (11) on the set surface is configured to be covered by the projection of the first set surface (SA) on the set surface.

8. The power module according to claim 7, characterized in that, The first metal layer (121) of the insulating plate (12) away from the chip (11) is connected to the heat dissipation structure (2) through the first solder layer (3), and the insulating layer (122) of the insulating plate (12) is connected to the first metal layer (121). The projection of the insulating layer (122) on the set surface covers the projection of the encapsulation structure (13) on the set surface, and the projection of the first set surface (SA) on the set surface is configured to be covered by the projection of the insulating layer (122) on the set surface.

9. The power module according to any one of claims 6 to 8, characterized in that, An annular groove (23) is formed on the end face of the heat dissipation structure (2) near the insulating plate (12). The part of the end face of the heat dissipation structure (2) enclosed by the annular groove (23) forms the first set surface (SA), and the inner side wall of the annular groove (23) in the radial direction forms the peripheral side surface (SC).

10. The power module according to any one of claims 6 to 8, characterized in that, In the first direction, the end face of the encapsulation structure (13) near the heat dissipation structure (2) is a second set surface (SB). The first metal layer (121) of the insulating plate (12) away from the chip (11) is connected to the heat dissipation structure (2) through the first solder layer (3), and the surface of the first metal layer (121) facing away from the heat dissipation structure (2) is a first surface (S1). The distance between the first set surface (SA) and the second set surface (SB) is greater than or equal to the distance between the first set surface (SA) and the first surface (S1).

11. A power conversion device, characterized in that, Including the power module according to any one of claims 1 to 4; and / or, including the power module according to any several of claims 5 to 10.

12. The power conversion device according to claim 11, characterized in that, The heat dissipation structure (2) of the power module includes at least one of a heat pipe (2A) and a fin radiator (2B). When the heat dissipation structure (2) includes the heat pipe (2A) and the fin radiator (2B), the heat pipe (2A) is connected to the first solder layer (3) of the power module, and the heat pipe (2A) is connected to the fin radiator (2B).

13. The power conversion device according to claim 11, characterized in that, The number of chip units (1) of the power module is multiple, and the multiple chip units (1) are respectively connected to the heat dissipation structure (2) of the power module through corresponding first solder layers (3).

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