Ion implanter and exhaust system thereof

Abstract

The utility model relates to an ion implanter and an exhaust system thereof. The exhaust system comprises a first exhaust unit and a second exhaust unit. Wherein the first exhaust unit comprises a first exhaust pipeline, a first pump set and a waste gas treatment device, the first exhaust pipeline is used for being communicated with a cavity of the ion implanter, the first pump set and the waste gas treatment device are arranged on the first exhaust pipeline, and the first pump set is located between the cavity and the waste gas treatment device; the second exhaust unit comprises a second exhaust pipeline used for being communicated with a cold pump regeneration device of the ion implanter. The end, away from the cold pump regeneration device, of the second exhaust pipeline is used for being communicated with a workshop exhaust pipeline. According to the exhaust system disclosed by the invention, the service life of the waste gas treatment device can be prolonged, the maintenance time is more flexible, the operation time of the ion implanter is prolonged, and meanwhile, as the cold pump regeneration device is closed when the cold pump works normally and is only used during regeneration, the influence of the total gas quantity on a workshop exhaust pipeline is very small.

Description

Technical Field

[0001] The present disclosure relates to the technical field of ion implanters, and in particular to an ion implanter and an exhaust system thereof. Background Art

[0002] Currently, semiconductor manufacturers employ different installation arrangements for ion implanter exhaust systems. In some related technologies, each chamber and cold pump regeneration unit of the ion implanter is connected to an exhaust gas treatment unit. This results in a short lifespan and high replacement frequency for the exhaust gas treatment unit. Furthermore, the cold pump regeneration unit cannot operate dry-pumping (i.e., the exhaust gas treatment system in each chamber will trigger an alarm error due to insufficient negative pressure), thus extending maintenance time. In other solutions, each chamber and cold pump regeneration unit of the ion implanter is connected to a separate exhaust gas treatment unit, addressing the issue of dry-pumping during cold pump regeneration. However, the need for two exhaust gas treatment units significantly increases costs. Utility Model Content

[0003] The purpose of the present disclosure is to provide an ion implanter and an exhaust system thereof, which can at least partially solve the related technical problems.

[0004] In order to achieve the above objectives, according to a first aspect of the present disclosure, an exhaust system for an ion implanter is provided, comprising:

[0005] a first exhaust unit comprising a first exhaust pipeline for communicating with a chamber of the ion implanter, and a first pump group and an exhaust gas treatment device provided in the first exhaust pipeline, wherein the first pump group is located between the chamber and the exhaust gas treatment device; and

[0006] The second exhaust unit includes a second exhaust pipeline for communicating with the cold pump regeneration device of the ion implanter, and one end of the second exhaust pipeline away from the cold pump regeneration device is used to communicate with the workshop exhaust pipe.

[0007] Optionally, the ion implanter includes a source chamber, a beam path chamber and a process chamber;

[0008] One end of the first exhaust pipeline away from the exhaust gas treatment device is used to connect to the source chamber, the beam path chamber and the process chamber respectively.

[0009] Optionally, the first exhaust pipe includes a main pipe, a first sub-pipe, a second sub-pipe and a third sub-pipe;

[0010] One end of the main pipe is in communication with the inlet of the exhaust gas treatment device, and the other end is in communication with one end of the first sub-pipe, the second sub-pipe, and the third sub-pipe, which are arranged in parallel. The ends of the first sub-pipe, the second sub-pipe, and the third sub-pipe, which are away from the main pipe, are respectively in communication with the source chamber, the beam path chamber, and the process chamber.

[0011] The first pump group includes a first pump body and a second pump body. The first pump body is arranged in the first sub-pipe, and the second pump body is arranged in the second sub-pipe.

[0012] Optionally, the first exhaust pipeline further includes a fourth sub-pipe arranged in parallel with the third sub-pipe;

[0013] The second sub-tube is in communication with the front portion of the beam path cavity. One end of the fourth sub-tube is in communication with the rear portion of the beam path cavity, and the other end is in communication with the main tube.

[0014] Optionally, the first exhaust pipeline further includes a fifth sub-pipe arranged in parallel with the third sub-pipe;

[0015] One end of the fifth sub-tube is connected to the true cavity lock of the ion implanter, and the other end is connected to the main tube;

[0016] The first pump group further includes a pump body three provided on the fifth sub-pipe.

[0017] Optionally, the pump body 1, the pump body 2 and the pump body 3 are molecular pumps.

[0018] Optionally, the first exhaust pipeline further includes a first manifold and a second manifold arranged in parallel;

[0019] The first sub-pipe and the second sub-pipe are connected to the main pipe through the first manifold;

[0020] The third sub-pipe, the fourth sub-pipe and the fifth sub-pipe are connected to the main pipe through the second manifold;

[0021] The first pump group further includes a pump body four and a pump body five. The pump body four is arranged on the first manifold, and the pump body five is arranged on the second manifold.

[0022] Optionally, the pump body four and the pump body five are dry pumps.

[0023] Optionally, the cold pump regeneration device includes a plurality of cold pumps, and the second exhaust pipeline is used to communicate with the plurality of cold pumps respectively; and / or

[0024] The outlet of the exhaust gas treatment device is in communication with the second exhaust pipe.

[0025] According to a second aspect of the present disclosure, an ion implanter is further provided, comprising the above-mentioned exhaust system.

[0026] According to the above technical solution, the exhaust system of the ion implanter includes a first exhaust unit and a second exhaust unit, wherein the first exhaust unit includes a first exhaust pipeline, a first pump group and an exhaust gas treatment device, and the first exhaust pipeline is connected to each chamber of the ion implanter, and the exhaust gas from each chamber is sent to the exhaust gas treatment device by the first pump group, and then discharged into the workshop exhaust pipe after treatment; and the second exhaust unit includes a second exhaust pipeline that can be connected to the cold pump regeneration device of the ion implanter, and is used to discharge the gas of the cold pump regeneration device of the ion implanter into the workshop exhaust pipe. The exhaust system disclosed in the present invention uses the first exhaust unit with the exhaust gas treatment device to only treat the exhaust gas from each chamber of the ion implanter, which can extend the life of the exhaust gas treatment device, make maintenance time more flexible, and improve the operating time of the ion implanter. At the same time, it is convenient for the second exhaust unit to discharge the gas of the cold pump regeneration device into the workshop exhaust pipe. Since the cold pump regeneration device is closed when the cold pump is operating normally and is only used during regeneration, the total gas volume has little impact on the workshop exhaust pipe.

[0027] Other features and advantages of the present disclosure will be described in detail in the following detailed description. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] The accompanying drawings are used to provide a further understanding of the present disclosure and constitute a part of the specification. Together with the following detailed description, they are used to explain the present disclosure but do not constitute a limitation of the present disclosure. In the accompanying drawings:

[0029] Figure 1 This is a structural diagram of the exhaust system of some ion implanters in the related art;

[0030] Figure 2 is a structural diagram of an exhaust system of some other ion implanters in the related art;

[0031] Figure 3 This is a structural diagram of the exhaust system of the ion implanter provided in some embodiments of the present disclosure.

[0032] Description of Reference Numerals

[0033] 10-source chamber; 20-beam path chamber; 30-process chamber; 40-vacuum lock; 50-cold pump regeneration device; 60-waste gas treatment device; 100-first exhaust unit; 110-first exhaust pipeline; 111-main pipe; 112-first sub-pipe; 113-second sub-pipe; 114-third sub-pipe; 115-fourth sub-pipe; 116-fifth sub-pipe; 117-first manifold; 118-second manifold; 120-first pump group; 121-pump body one; 122-pump body two; 123-pump body three; 124-pump body four; 125-pump body five; 200-second exhaust unit; 210-second exhaust pipeline. DETAILED DESCRIPTION

[0034] The following describes the specific embodiments of the present disclosure in detail with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are only used to illustrate and explain the present disclosure and are not intended to limit the present disclosure.

[0035] In the present disclosure, unless otherwise specified, directional words such as "inside" and "outside" refer to the inside and outside of the outline of the corresponding component; "far" and "near" refer to the corresponding structure or corresponding component being far away from or close to another structure or component. In addition, the terms "first", "second" and the like used in the present disclosure are intended to distinguish one element from another and do not have order or importance. In addition, in the following description, when referring to the drawings, unless otherwise explained, the same figure marks in different drawings represent the same or similar elements. The above definitions are only used to explain and illustrate the present disclosure and should not be understood as limitations on the present disclosure.

[0036] In related technologies, such as Figure 1 As shown, each chamber of the injection molding machine (including the source chamber 10, beam path chamber 20, process chamber 30 and vacuum lock 40) and the cold pump regeneration device 50 are connected to the exhaust gas treatment device 60. The gas needs to be treated by the exhaust gas treatment device 60 before being discharged to the workshop exhaust pipe. Therefore, the life of the exhaust gas treatment device 60 is short and the replacement frequency is high. In addition, the cold pump regeneration device 50 cannot perform dry pump operation when working (that is, the exhaust gas treatment of each chamber will alarm and fail due to insufficient negative pressure), thereby extending maintenance time. Figure 2 As shown, in other schemes, each chamber of the syringe injector (including the source chamber 10, the beam path chamber 20, the process chamber 30 and the vacuum lock 40) and the cold pump regeneration device 50 are respectively connected to a waste gas treatment device 60, and the gases are treated by the waste gas treatment device 60 and then discharged to the workshop exhaust pipe, thereby solving the problem that the cold pump regeneration device 50 cannot perform dry pumping operation when working, but the two waste gas treatment devices 60 greatly increase the cost.

[0037] In order to achieve the above purpose, Figure 3As shown, according to the first aspect of the present disclosure, an exhaust system for an ion implanter is provided, the exhaust system comprising a first exhaust unit 100 and a second exhaust unit 200. The first exhaust unit 100 comprises a first exhaust line 110 for communicating with a chamber of the ion implanter, and a first pump group 120 and an exhaust gas treatment device 60 provided on the first exhaust line 110, wherein the first pump group 120 is located between the chamber and the exhaust gas treatment device 60; the second exhaust unit 200 comprises a second exhaust line 210 for communicating with a cold pump regeneration device 50 of the ion implanter, and an end of the second exhaust line 210 away from the cold pump regeneration device 50 is used to communicate with an exhaust pipe in a workshop.

[0038] Through the above technical solution, the exhaust system of the ion implanter includes a first exhaust unit 100 and a second exhaust unit 200, wherein the first exhaust unit 100 includes a first exhaust pipe 110, a first pump group 120 and a waste gas treatment device 60. The first exhaust pipe 110 is connected to each chamber of the ion implanter, and the first pump group 120 sends the waste gas of each chamber into the waste gas treatment device 60, and then discharges it into the workshop exhaust pipe after treatment; and the second exhaust unit 200 includes a second exhaust pipe 210 that can be connected to the cold pump regeneration device 50 of the ion implanter, which is used to discharge the gas of the cold pump regeneration device 50 of the ion implanter into the workshop exhaust pipe. The exhaust system disclosed herein utilizes a first exhaust unit 100 having an exhaust gas treatment device 60 to only process the exhaust gas from each chamber of the ion implanter, thereby extending the life of the exhaust gas treatment device 60, making maintenance time more flexible, and improving the operating time of the ion implanter. At the same time, it is beneficial for the second exhaust unit 200 to discharge the gas from the cold pump regeneration device 50 into the workshop exhaust pipe. Since the cold pump regeneration device 50 is closed when the cold pump is working normally and is only used during regeneration, the total gas volume has little impact on the workshop exhaust pipe.

[0039] It is understood that the first exhaust pipe 110 and the second exhaust pipe 210 of the present disclosure may each be provided with one or more valves to enable switching between the respective components. Those skilled in the art can arrange these valves based on actual needs. Similarly, when describing specific embodiments below, valves or other detection devices may also be provided on the corresponding sub-pipelines, manifolds, and main pipes 111, which will not be detailed here.

[0040] In some embodiments, the cold pump regeneration device 50 is used in the process chamber 30 of an ion implanter. The cold pump regeneration device 50 includes multiple cold pumps, and the second exhaust line 210 is connected to each of the multiple cold pumps. The cold pumps can be located outside the process chamber 30 to provide an environment suitable for ion implantation of semiconductor components. The cold pump regeneration device 50 can also include other components in addition to the multiple cold pumps. For specific configuration, refer to related art. For example, connecting pipes and various valve components for opening and closing the valves can be provided.

[0041] The outlet of the exhaust gas treatment device 60 and the second exhaust pipe 210 can be directly connected to the workshop exhaust pipe respectively. In some embodiments, the outlet of the exhaust gas treatment device 60 is connected to the second exhaust pipe 210, and the second exhaust pipe 210 is connected to the workshop exhaust pipe, so that the exhaust gas is transported to the subsequent treatment device for treatment to meet the standards before being discharged.

[0042] like Figure 3 As shown, in some embodiments, an ion implanter may include a source chamber 10, a beam path chamber 20, and a process chamber 30; an end of a first exhaust pipe 110 remote from an exhaust gas treatment device 60 is used to connect to the source chamber 10, the beam path chamber 20, and the process chamber 30, respectively. The ion implanter may include a source chamber 10, a beam path chamber 20, and a process chamber 30 connected in sequence, so that gases, impurities, or harmful substances within the source chamber 10, the beam path chamber 20, and the process chamber 30 can enter the exhaust gas treatment device 60 for treatment under the action of a first pump assembly 120 before being discharged. Compared to related art, the exhaust gas treatment device 60 of this embodiment is only used to treat gases from the source chamber 10, the beam path chamber 20, and the process chamber 30, and does not simultaneously treat gases from a cold pump treatment device, thereby relatively extending the life of the exhaust gas treatment device 60. It should be noted that the exhaust gas treatment device 60 of this embodiment can refer to corresponding structures disclosed in related art, including but not limited to devices for treating arsenic, and will not be described in detail here.

[0043] like Figure 3As shown, in some embodiments, the first exhaust pipeline 110 may include a main pipe 111, a first sub-pipe 112, a second sub-pipe 113 and a third sub-pipe 114; wherein, one end of the main pipe 111 is connected to the inlet of the exhaust gas treatment device 60, and the other end is respectively connected to one end of the first sub-pipe 112, the second sub-pipe 113 and the third sub-pipe 114 arranged in parallel, and the first sub-pipe 112, the second sub-pipe 113 and the third sub-pipe 114 are used to communicate with the source chamber 10, the beam path chamber 20 and the process chamber 30 at one end away from the main pipe 111; the first pump group 120 includes a pump body 121 and a pump body 2 122, the pump body 121 is arranged in the first sub-pipe 112, and the pump body 2 122 is arranged in the second sub-pipe 113. Among them, the first sub-tube 112, the second sub-tube 113 and the third sub-tube 114 are arranged in parallel, and one end of the first sub-tube 112 is connected to the source chamber 10 through the pump body 121, one end of the second sub-tube 113 is connected to the front of the beam path chamber 20 through the pump body 2 122, one end of the third sub-tube 114 is connected to the process chamber 30, and the other end of the first sub-tube 112, the other end of the second sub-tube 113 and the other end of the third sub-tube 114 are respectively connected to the main pipe 111 provided with the exhaust gas treatment device 60, so that the gases in the three chambers can all be treated by the exhaust gas treatment device 60.

[0044] In some embodiments, the first exhaust pipe 110 may further include a fourth sub-pipe 115 arranged in parallel with the third sub-pipe 114. The second sub-pipe 113 is connected to the front of the beam path cavity 20, and one end of the fourth sub-pipe 115 is connected to the rear of the beam path cavity 20, and the other end is connected to the main pipe 111. Through this arrangement, the two ends of the fourth sub-pipe 115 are respectively connected to the rear of the beam path cavity 20 and the main pipe 111. Therefore, it can deliver gas from the rear of the beam path cavity 20 into the main pipe 111, and then be treated by the exhaust gas treatment device 60 installed on the main pipe 111 before being discharged into the workshop exhaust duct.

[0045] Among them, the fourth sub-tube 115 is arranged in parallel with the third sub-tube 114, the second sub-tube 113 and the first sub-tube 112 respectively, one end of the second sub-tube 113 is connected to the front of the beam path cavity 20 through the pump body 2 122, one end of the fourth sub-tube 115 is connected to the rear of the beam path cavity 20, and the other ends of the second sub-tube 113 and the fourth sub-tube 115 are respectively connected to the main pipe 111, so that the gas in the beam path cavity 20 can be more efficiently sent to the exhaust gas treatment device 60 for treatment.

[0046] like Figure 3As shown, in some embodiments of the present disclosure, the first exhaust pipeline 110 further includes a fifth sub-pipe 116 arranged in parallel with the third sub-pipe 114. One end of the fifth sub-pipe 116 is connected to the ion implanter's load lock, and the other end is connected to the main pipe 111. The first pump assembly 120 further includes a third pump body 123 disposed on the fifth sub-pipe 116. The ion implanter's process chamber 30 has two vacuum locks 40 connected thereto. One end of the fifth sub-pipe 116 can be connected to each of the two vacuum locks 40, and the other end is connected to the main pipe 111. The third pump body 123 is disposed on the fifth sub-pipe 116 and is used to transport gas from the two vacuum locks 40 to the exhaust gas treatment device 60 of the main pipe 111 for treatment.

[0047] It should be noted that the first pump body 121, the second pump body 122, and the third pump body 123 can all be molecular pumps. A molecular pump is a type of vacuum pump that uses a high-speed rotating rotor to transfer momentum to gas molecules, giving them a directional velocity, thereby compressing them and driving them toward an exhaust port for extraction by the preceding stage.

[0048] In order to better deliver the gas in each sub-pipe to the exhaust gas treatment device 60, in some embodiments, the first exhaust pipeline 110 further includes a first manifold 117 and a second manifold 118 arranged in parallel; the first sub-pipe 112 and the second sub-pipe 113 are respectively connected to the main pipe 111 through the first manifold 117; the third sub-pipe 114, the fourth sub-pipe 115 and the fifth sub-pipe 116 are connected to the main pipe 111 through the second manifold 118; the first pump group 120 further includes a fourth pump body 124 and a fifth pump body 125, wherein the fourth pump body 124 is provided on the first manifold 117 and the fifth pump body 125 is provided on the second manifold 118.

[0049] The first sub-pipe 112 and the second sub-pipe 113 are respectively connected to the main pipe 111 through the first manifold 117, while the third sub-pipe 114, the fourth sub-pipe 115, and the fifth sub-pipe 116 are respectively connected to the main pipe 111 through the second manifold 118. A pump body 124 is provided on the first manifold 117, and a pump body 125 is provided on the second manifold 118. Through the further action of the pump body 124 and the pump body 125, the gas is sent to the exhaust gas treatment device 60. It should be noted that the pump body 124 and the pump body 125 can both be dry pumps. Among them, a dry vacuum pump is an oil-free dry mechanical vacuum pump, also referred to as a dry pump, which is mainly divided into two types: dry screw vacuum pump and scroll dry vacuum pump.

[0050] When the dry pump is working, the volume of the pump chamber changes periodically, from large to small and from small to large. In this way, the opening and closing of the gas channel is used to achieve the pumping effect, and the spliced set structure is adopted. Fine impurities and dust can be discharged out of the pump together with the gas through the airway.

[0051] Among them, dry pumps also have the following advantages: they can maintain continuous operation from the atmosphere to the ultimate vacuum; they will not cause process pollution; they are cost-effective and environmentally friendly.

[0052] According to a second aspect of the present disclosure, an ion implanter is also provided. The ion implanter includes the above-mentioned exhaust system. Therefore, the ion implanter also has all the above-mentioned advantages.

[0053] The ion implanter and its exhaust system disclosed in the present invention include a source chamber 10, a beam path chamber 20, a process chamber 30 and a vacuum lock 40 connected to the process chamber 30. The exhaust system includes a first exhaust unit 100 and a second exhaust unit 200, wherein the first exhaust unit 100 may include a first exhaust pipeline 110, a first pump group 120 and an exhaust gas treatment device 60. The first exhaust pipeline 110 is connected to each chamber of the ion implanter, and the exhaust gas of each chamber is sent to the exhaust gas treatment device 60 by the first pump group 120, and then discharged into the workshop exhaust pipe after treatment; specifically, the first exhaust pipeline 110 includes a first sub-pipe 112, a second sub-pipe 113, a third sub-pipe 114, a fourth sub-pipe 115 and a fifth sub-pipe 116 arranged in parallel, a first manifold 117 and a second manifold 118 arranged in parallel, and a main pipe 111; the first pump group 120 includes a pump body 121, a pump body 2 122 , pump body three 123, pump body four 124 and pump body five 125, one end of the first sub-tube 112 is connected to the source chamber 10 through pump body one 121, one end of the second sub-tube 113 is connected to the front of the beam path chamber 20 through pump body two 122, one end of the fourth sub-tube 115 is connected to the rear of the beam path chamber 20, one end of the third sub-tube 114 is connected to the process chamber 30, the fifth sub-tube is connected to the vacuum lock 40 through pump body three 123, and the other ends of the first sub-tube 112 and the second sub-tube 113 are connected to the main pipe 111 through the first manifold 117, the other ends of the third sub-tube 114, the fourth sub-tube 115 and the fifth sub-tube 116 are connected to the main pipe 111 through the second manifold 118, and the inlet of the exhaust gas treatment device 60 is connected to the main pipe 111. The second exhaust unit 200 includes a second exhaust pipe 210 that can be connected to the cold pump regeneration device 50 of the ion implanter, and is used to discharge the gas of the cold pump regeneration device 50 of the ion implanter into the workshop exhaust pipe. Specifically, the second exhaust unit 200 includes a second exhaust pipe 210, and the second exhaust pipe 210 can connect the cold pump regeneration device 50 and the workshop exhaust pipe. Since the cold pump regeneration device 50 is closed when the cold pump is working normally and is only used during regeneration, the total gas volume has little impact on the workshop exhaust pipe. The exhaust system disclosed in the present invention utilizes the first exhaust unit 100 with the exhaust gas treatment device 60 to only treat the exhaust gas of each chamber of the ion implanter, which can extend the life of the exhaust gas treatment device 60, make maintenance time more flexible, and improve the operating time of the ion implanter.

[0054] The preferred embodiments of the present disclosure are described in detail above in conjunction with the accompanying drawings. However, the present disclosure is not limited to the specific details of the above embodiments. Within the technical concept of the present disclosure, various simple modifications can be made to the technical solutions of the present disclosure, and these simple modifications all fall within the scope of protection of the present disclosure.

[0055] It should also be noted that the various specific technical features described in the above specific embodiments can be combined in any appropriate manner without contradiction. In order to avoid unnecessary repetition, the present disclosure will not further describe various possible combinations.

[0056] In addition, the various embodiments of the present disclosure may be arbitrarily combined, and as long as they do not violate the concept of the present disclosure, they should also be regarded as the contents disclosed by the present disclosure.

Claims

1. An exhaust system for an ion implanter, characterized in that: include: a first exhaust unit comprising a first exhaust pipeline for communicating with a chamber of the ion implanter, and a first pump group and an exhaust gas treatment device provided in the first exhaust pipeline, wherein the first pump group is located between the chamber and the exhaust gas treatment device; and The second exhaust unit includes a second exhaust pipeline for communicating with the cold pump regeneration device of the ion implanter, and one end of the second exhaust pipeline away from the cold pump regeneration device is used to communicate with the workshop exhaust pipe.

2. The exhaust system of the ion implanter according to claim 1, characterized in that: The ion implanter includes a source chamber, a beam path chamber and a process chamber; One end of the first exhaust pipeline away from the exhaust gas treatment device is used to connect to the source chamber, the beam path chamber and the process chamber respectively.

3. The exhaust system of the ion implanter according to claim 2, characterized in that: The first exhaust pipe includes a main pipe, a first sub-pipe, a second sub-pipe and a third sub-pipe; One end of the main pipe is in communication with the inlet of the exhaust gas treatment device, and the other end is in communication with one end of the first sub-pipe, the second sub-pipe, and the third sub-pipe, which are arranged in parallel. The ends of the first sub-pipe, the second sub-pipe, and the third sub-pipe, which are away from the main pipe, are respectively in communication with the source chamber, the beam path chamber, and the process chamber. The first pump group includes a first pump body and a second pump body. The first pump body is arranged in the first sub-pipe, and the second pump body is arranged in the second sub-pipe.

4. The exhaust system of the ion implanter according to claim 3, characterized in that: The first exhaust pipe further includes a fourth sub-pipe arranged in parallel with the third sub-pipe; The second sub-tube is in communication with the front portion of the beam path cavity. One end of the fourth sub-tube is in communication with the rear portion of the beam path cavity, and the other end is in communication with the main tube.

5. The exhaust system of the ion implanter according to claim 4, characterized in that: The first exhaust pipe further includes a fifth sub-pipe arranged in parallel with the third sub-pipe; One end of the fifth sub-tube is connected to the true cavity lock of the ion implanter, and the other end is connected to the main tube; The first pump group further includes a pump body three provided on the fifth sub-pipe.

6. The exhaust system of the ion implanter according to claim 5, characterized in that: The pump body 1, the pump body 2 and the pump body 3 are molecular pumps.

7. The exhaust system of the ion implanter according to claim 5, characterized in that: The first exhaust pipe further includes a first manifold and a second manifold arranged in parallel; The first sub-pipe and the second sub-pipe are connected to the main pipe through the first manifold; The third sub-pipe, the fourth sub-pipe and the fifth sub-pipe are connected to the main pipe through the second manifold; The first pump group further includes a pump body four and a pump body five. The pump body four is arranged on the first manifold, and the pump body five is arranged on the second manifold.

8. The exhaust system of the ion implanter according to claim 7, wherein: The pump body four and the pump body five are dry pumps.

9. The exhaust system of an ion implanter according to any one of claims 1 to 8, characterized in that: The cold pump regeneration device includes a plurality of cold pumps, and the second exhaust pipeline is used to communicate with the plurality of cold pumps respectively; and / or The outlet of the exhaust gas treatment device is in communication with the second exhaust pipe.

10. An ion implanter, characterized in that: An exhaust system comprising any one of claims 1 to 9.

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