Semiconductor heat treatment equipment

Abstract

According to the semiconductor heat treatment equipment, when the semiconductor heat treatment equipment works, a metal heat radiation reflection structure is always in a negative potential, so that an electrochemical reaction is not easy to occur on the metal heat radiation reflection structure but occurs on an auxiliary anode, and the auxiliary anode guides transfer of a corrosion reaction; therefore, the metal heat radiation reflection structure can optimize the transmission efficiency of heat energy, so that the heat radiation borne by the wafer at each position in the wafer boat is more uniform, the thin film deposition process of the wafer is ensured to be carried out under high-quality control, and the yield of the wafer is improved. Therefore, the thickness uniformity of thin film deposition in each area on the same wafer is good, and the thickness uniformity of thin films between different wafers is good.

Description

Technical Field

[0001] The utility model relates to the field of semiconductors, in particular to semiconductor heat treatment equipment. Background Art

[0002] In semiconductor manufacturing, thin film deposition is a critical step in wafer processing. In recent years, technological advancements have led to the gradual adoption of small-batch furnaces for thin film deposition, aiming to improve the equipment's heating and cooling speeds and material loading and unloading efficiency, thereby effectively increasing overall throughput. To meet these demands, existing technologies have generally adopted thermal radiation heating, aiming to achieve faster and more uniform temperature control.

[0003] In such low-volume furnace tube tools, the furnace tube tool's heat radiation device typically relies on an exposed stainless steel reflector to heat the wafers on the wafer boat. However, the stainless steel reflector is susceptible to external contaminants in high-temperature environments, resulting in corrosion and brown spots on the surface. This corrosion not only reduces the efficiency of heat radiation but also negatively affects the heating uniformity of the wafer, resulting in poor thickness uniformity (uniformity) of thin film deposition within each area on the same wafer (within wafer, WiW) and poor thickness consistency between different wafers (wafer to wafer, WTW). This corrosion phenomenon is particularly exacerbated when the rapid cooling unit (RCU) is turned on.

[0004] Therefore, it is urgent to reduce or avoid the corrosion of the stainless steel reflector to improve the uniformity of thin film deposition on the wafer. Utility Model Content

[0005] The problem solved by the utility model is to provide a semiconductor heat treatment device for improving the cleaning and maintenance cycle and service life of the metal heat radiation reflection structure in the semiconductor heat treatment device and improving the film deposition quality.

[0006] To solve the above problems, the present invention provides a semiconductor heat treatment equipment, comprising a furnace body; a process tube arranged in the furnace body; and a wafer boat arranged in the process tube, the wafer boat being used to carry wafers; a wafer boat base located directly below the furnace body, the wafer boat base being used to carry the wafer boat and drive the wafer boat and the wafer to rotate; a heater located in the furnace body and outside the process tube, for providing heat to the process tube to achieve heat treatment of the wafers in the process tube; a metal heat radiation reflecting structure located in the furnace body and arranged between the heater and the furnace body; a protection device comprising: a DC power supply comprising a positive electrode and a negative electrode, the negative electrode being connected to the metal heat radiation reflecting structure to keep the metal heat radiation reflecting structure at a negative potential; an auxiliary anode connected to the positive electrode; and an ion conductive medium connecting the metal heat radiation reflecting structure and the auxiliary anode to achieve an electrochemical closed loop.

[0007] Optionally, the protection device is provided at one or more of the side walls, bottom and top of the furnace body.

[0008] Optionally, the metal heat radiation reflecting structure includes a plurality of spaced-apart heat radiation reflecting units; the number of the protective devices is multiple and corresponds one-to-one to the heat radiation reflecting units, and the negative pole of each of the protective devices is connected to one of the heat radiation reflecting units; or, the number of the protective devices is one, and the negative pole of the protective device is connected in series with a plurality of the heat radiation reflecting units, or the negative pole of the protective device is connected to one of the heat radiation reflecting units through parallel leads.

[0009] Optionally, the metal heat radiation reflecting structure is a whole; there are multiple protection devices, and the negative electrodes of the multiple protection devices are distributed and connected to various positions of the metal heat radiation reflecting structure.

[0010] Optionally, the activity of the material of the auxiliary anode is higher than that of the material of the metal heat radiation reflecting structure.

[0011] Optionally, the material of the auxiliary anode includes: aluminum-magnesium alloy or titanium alloy.

[0012] Optionally, the ion conductive medium includes any one of an electrolyte, a gel electrolyte and a solid electrolyte.

[0013] Optionally, the ion conductive medium includes an electrolyte; the electrolyte at least partially immerses the metal heat radiation reflecting structure and the auxiliary anode; or, the metal heat radiation reflecting structure is connected to an electrical connection structure, and the electrical connection structure and the auxiliary anode are at least partially immersed in the electrolyte.

[0014] Optionally, the protection device also includes: a monitoring unit for detecting the auxiliary anode, the monitoring unit including: a reference electrode for providing a stable reference potential; a detection circuit module connected to the reference electrode and the auxiliary anode, the detection circuit module including: a potential measuring unit for measuring the potential difference between the auxiliary anode and the reference electrode; a current measuring unit for monitoring the current value passing through the auxiliary anode; an alarm module connected to the detection circuit module for recording in real time the potential difference obtained by the potential measuring unit and the current value obtained by the current measuring unit, and issuing an alarm when the potential difference deviates from the range allowed by the potential preset value and the current value deviates from the range allowed by the current preset value.

[0015] Optionally, the auxiliary anode includes a plurality of anode units connected in series.

[0016] Compared with the prior art, the technical solution of the utility model has the following advantages:

[0017] When the semiconductor heat treatment equipment provided by the embodiment of the present invention is working, the heater provides heat to the process tube to achieve heat treatment of the wafers in the process tube. The heat radiation reflection structure is located in the furnace body and is used to gather the heat provided by the heater to the process tube, so that the wafers at various positions of the wafer boat in the process tube receive more uniform heat radiation, reducing the problem of local overheating or uneven heating in the wafer boat. The negative pole of the DC power supply in the protection device is connected to the metal thermal radiation reflection structure, and the positive pole is connected to the auxiliary anode. The ion conductive medium provides the necessary ion transfer channel for the electrochemical reaction between the metal thermal radiation reflection structure and the auxiliary anode, ensuring the effective closure of the protection circuit, so that when the semiconductor heat treatment equipment is working, the metal thermal radiation reflection structure is always at a negative potential, so that the electrochemical reaction is not likely to occur on the metal thermal radiation reflection structure, but occurs on the auxiliary anode. The auxiliary anode guides the transfer of the corrosion reaction to avoid or slow down the corrosion of the metal thermal radiation reflection structure. Therefore, the metal thermal radiation reflection structure can optimize the heat energy transfer efficiency, so that the wafers at various positions in the wafer boat are subjected to more uniform heat radiation, ensuring that the thin film deposition process of the wafer is carried out under high-quality control, so that the thickness uniformity of the thin film deposition in each area on the same wafer is good, and the film thickness consistency between different wafers is good. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 This is a structural diagram of an embodiment of the semiconductor heat treatment equipment of the present utility model;

[0019] Figure 2 This is a schematic top view of the various structures in the furnace body in one embodiment of the semiconductor heat treatment equipment of the present invention;

[0020] Figures 3 to 7It is a structural schematic diagram of another embodiment of the semiconductor heat treatment equipment of the present utility model;

[0021] Figure 8 It is a schematic diagram of the composition of the monitoring unit of the protection device in the semiconductor heat treatment equipment of the present invention. DETAILED DESCRIPTION

[0022] As can be seen from the background technology, the primary technical problem of this invention lies in effectively addressing the temperature instability caused by surface corrosion of stainless steel reflectors. Corrosion shortens reflector cleaning cycles and reduces their lifespan, which directly impacts machine stability, leading to poor thickness uniformity across different regions of the same wafer and poor thickness consistency across different wafers.

[0023] In order to solve the technical problem, when the semiconductor heat treatment equipment provided by the embodiment of the present invention is working, the heater provides heat to the process tube to achieve heat treatment of the wafers in the process tube. The heat radiation reflection structure is located in the furnace body and is used to concentrate the heat provided by the heater to the process tube, so that the wafers at various positions of the wafer boat in the process tube receive more uniform heat radiation, reducing the problem of local overheating or uneven heating in the wafer boat. The negative pole of the DC power supply in the protection device is connected to the metal thermal radiation reflection structure, and the positive pole is connected to the auxiliary anode. The ion conductive medium provides the necessary ion transfer channel for the electrochemical reaction between the metal thermal radiation reflection structure and the auxiliary anode, ensuring the effective closure of the protection circuit, so that when the semiconductor heat treatment equipment is working, the metal thermal radiation reflection structure is always at a negative potential, so that the electrochemical reaction is not likely to occur on the metal thermal radiation reflection structure, but occurs on the auxiliary anode. The auxiliary anode guides the transfer of the corrosion reaction to avoid or slow down the corrosion of the metal thermal radiation reflection structure. Therefore, the metal thermal radiation reflection structure can optimize the heat energy transfer efficiency, so that the wafers at various positions in the wafer boat are subjected to more uniform heat radiation, ensuring that the thin film deposition process of the wafer is carried out under high-quality control, so that the thickness uniformity of the thin film deposition in each area on the same wafer is good, and the film thickness consistency between different wafers is good.

[0024] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0025] refer to Figures 1 to 8 , an embodiment of the present utility model provides a semiconductor heat treatment device.

[0026] like Figure 1 and Figure 2 As shown, the semiconductor heat treatment equipment is used to perform a thin film deposition process on a wafer, and includes: a furnace body 100 (such as Figure 1); a process tube 104 disposed in the furnace body 100; and a wafer boat 101 (Boat) disposed in the process tube 104 (as shown); Figure 1 As shown), the wafer boat 101 is used to carry the wafer; the wafer boat base 102 is located directly below the furnace body 100, the wafer boat base 102 is used to carry the wafer boat 101, drive the wafer boat 101 and the wafer to rotate, and the wafer boat base 102 is also used to carry the wafer boat 101 into or out of the inner cavity of the process tube 104; the heater 103 (as shown) Figure 1 As shown), it is located in the furnace body 100 and outside the process tube 104, and is used to provide heat to the process tube 104 to achieve heat treatment of the wafers in the process tube 104; the metal heat radiation reflection structure 105 (as Figure 1 As shown), it is located in the furnace body 100 and is arranged between the heater 103 and the furnace body 100; the protection device includes: a DC power supply 40 (as Figure 1 As shown), including a positive electrode and a negative electrode, the negative electrode is connected to the metal heat radiation reflection structure 105, and is used to keep the metal heat radiation reflection structure 105 at a negative potential; the auxiliary anode 20 (as shown Figure 1 ), connected to the positive electrode; ion conductive medium 30 (as Figure 1 As shown), the metal heat radiation reflecting structure 105 and the auxiliary anode 20 are connected to realize an electrochemical closed loop.

[0027] The semiconductor heat treatment equipment provided by the present invention is a multifunctional equipment used for performing process treatment on wafers, specifically including thin film deposition process, ion diffusion doping at high temperature, thermal oxidation process, annealing process, etc. In the embodiment of the present invention, the semiconductor heat treatment equipment is used for thin film deposition process to illustrate the improvement of the quality of wafer process treatment by the protection device.

[0028] When the semiconductor heat treatment equipment is working, the heater 103 provides heat to the process tube 104 to achieve heat treatment of the wafers in the process tube 104. The heat radiation reflection structure 105 is located in the furnace body 100, and is used to gather the heat provided by the heater 103 to the process tube 104, so that the heat radiation received by the wafers at various positions of the wafer boat 101 in the process tube 104 is more uniform, thereby reducing the problem of local overheating or uneven heating in the wafer boat 101. The negative electrode of the DC power supply 40 in the protection device is connected to the metal heat radiation reflecting structure 105, and the positive electrode is connected to the auxiliary anode 20. The ion conductive medium 30 provides the necessary ion transfer channel for the electrochemical reaction between the metal heat radiation reflecting structure 105 and the auxiliary anode 20, ensuring the effective closure of the protection circuit. When the semiconductor heat treatment equipment is working, the metal heat radiation reflecting structure 105 is always at a negative potential, so that the electrochemical reaction is not likely to occur on the metal heat radiation reflecting structure 105, but instead occurs on the auxiliary anode 20. The auxiliary anode 20 guides the transfer of the corrosion reaction to avoid or slow down the corrosion of the metal heat radiation reflecting structure 105, thereby extending the service life of the metal heat radiation reflecting structure 105, so that the metal heat radiation reflecting structure 105 can optimize the heat energy transfer efficiency, so that the heat radiation received by the wafers at various positions in the wafer boat 101 is more uniform, ensuring that the thin film deposition process of the wafers is carried out under high-quality control, so that the thickness uniformity of the thin film deposition in various regions on the same wafer is good, and the film thickness consistency between different wafers is good.

[0029] The furnace body 100 is used to protect the thin film deposition process in the furnace body 100 from being disturbed by the external environment. The furnace body 100 provides the process space required for the thin film deposition process of the wafer.

[0030] The process tube 104 is disposed in the furnace body 100 and is used as a reaction area for thermal treatment of wafers, forming a controlled reaction environment.

[0031] First, the arrangement of the process tube 104 isolates the wafers in the wafer boat 101 from the external environment, preventing external impurities and pollutants from entering the reaction area, thereby ensuring the cleanliness of the wafer surface and the stability of the process, which is conducive to promoting uniform deposition of the thin film.

[0032] In this embodiment, the process tube 104 is made of high-purity quartz or other high-temperature-resistant and corrosion-resistant materials, which can maintain structural and chemical stability under high temperature and corrosive atmospheres. Specifically, the process tube 104 is made of quartz tube.

[0033] The wafer boat 101 is used to support and position the wafer so that the wafer maintains an appropriate position and orientation during the thin film deposition process, thereby enabling uniform thin film deposition.

[0034] In this embodiment, the wafer boat 101 is located at the center of the furnace body 100, which is conducive to uniform heat reception for wafers at all locations on the wafer boat 101. In addition, the wafer boat 101 needs to be made of a material that can withstand high temperatures and remain stable.

[0035] It should be noted that the wafer boat 101 has a multi-layer structure, and each layer is used to place wafers, allowing multiple wafers to be processed simultaneously in a single process, significantly improving the throughput of the furnace tube machine and significantly increasing production efficiency.

[0036] In this embodiment, the wafer boat 101 is placed in a quartz tube 104. This placement of the wafer boat 101 within the quartz tube 104 protects the wafer boat 101, particularly during semiconductor manufacturing processes in high-temperature, highly corrosive environments. Quartz, due to its high-temperature stability and low reactivity, protects the wafer boat 101 from direct environmental damage.

[0037] The wafer boat base 102 is located directly below the furnace body 100 and is used to carry the wafer boat 101 into or out of the inner cavity of the process tube 104. It can stably support the wafer boat 101, and the wafer boat base 102 is used to drive the wafer boat 101 and the wafer to rotate. The rotational motion makes the wafer surface evenly exposed to the process gas and heat radiation, which is less likely to cause differences in film thickness and performance due to uneven temperature distribution and uneven distribution of process gas, which is beneficial to improving the quality of thin film deposition.

[0038] The heater 103 is located within the furnace body 100 and outside the process tube 104. This allows the heater 103 to efficiently provide heat to the process tube 104 without directly contacting the reaction atmosphere within the process tube 104. This prevents adverse reactions between the material in the heater 103 and the reaction gases, thereby extending the service life of the heater 103. Furthermore, the heater 103 provides heat through thermal radiation, enabling the temperature within the process tube 104 to reach the desired process temperature range, meeting the temperature requirements of the wafer thin film deposition process.

[0039] In this embodiment, there are multiple heaters 103, and they are arranged around the wafer boat 101. Therefore, when the semiconductor heat treatment equipment is working, the four sides of the wafer can be heated by the heaters 103, so that the heat distribution on the wafer is more uniform, and the thickness of the thin film deposited in each area on the same wafer is uniform, and the thickness of the thin film between different wafers is consistent.

[0040] Specifically, the heater 103 generates heat through a resistance wire, which has a fast temperature response time and can quickly adjust the temperature to meet the temperature requirements of different stages in the thin film deposition process.

[0041] When the semiconductor heat treatment equipment is working, the metal heat radiation reflecting structure 105 is located in the furnace body 100, and is used to reflect the heat energy generated by the heater 103, so that the heat generated by the heater 103 is concentrated to the process tube 104, so that the wafers in the wafer boat 101 in the process tube 104 are heated evenly; in addition, because the metal heat radiation reflecting structure 105 is located between the heater 103 and the furnace body 100, the metal heat radiation reflecting structure 105 also plays the role of heat insulation and increasing the effective utilization of energy, preventing or reducing the heat generated by the heater 103 from being absorbed and consumed after being radiated to the furnace body 100.

[0042] like Figure 3 As shown, in this embodiment, the metal heat radiation reflecting structure 105 is made of plate-shaped metal. As an example, the metal heat radiation reflecting structure 105 is in the shape of a cylinder with openings at both ends, and is arranged around the periphery of the multiple heaters 103. When the semiconductor heat treatment equipment is working, the metal heat radiation reflecting structure 105 gathers the heat from the sides of the heater 103 to the wafer boat 101. In other embodiments, in addition to the cylindrical shape with openings at both ends, the metal heat radiation reflecting structure also includes a top cover arranged on the top of the cylinder. When the semiconductor heat treatment equipment is working, the metal heat radiation reflecting structure gathers the heat from the sides and top of the heater to the wafer boat, so that the heat distribution on the wafer is more uniform, so that the thickness uniformity of the thin film deposited in each area on the same wafer is good, and the consistency of the film thickness between different wafers is good.

[0043] In this embodiment, the metal heat radiation reflective structure 105 is made of stainless steel. In other embodiments, the metal heat radiation reflective structure 105 can also be made of a highly heat-resistant and corrosion-resistant material, such as stainless steel or a high-chromium alloy. This helps prevent the metal heat radiation reflective structure 105 from being easily corroded even when exposed to external contaminants in a high-temperature environment for a long time, thereby improving the cleaning and maintenance cycle of the metal heat radiation reflective structure 105 and extending its service life.

[0044] It should be noted that the metal heat radiation reflective structure 105 has a coating on its surface. The coating effectively prevents corrosive factors in the environment (such as water vapor and organic matter) from directly contacting the metal heat radiation reflective structure 105, thereby reducing the corrosion rate. In this embodiment, the coating material includes one or more of zinc, nickel, and chromium.

[0045] In this embodiment, the metal heat radiation reflection structure 105 is a whole, and the number of the protective device is one, which can be set on the side wall of the furnace body 100 (such as Figure 3 As shown), bottom (as Figure 1 as shown) or top (as shown Figure 4 shown).

[0046] In other embodiments, the number of protective devices can also be multiple, and they can be set at one or more of the side walls, bottom and top of the furnace body 100 as needed, and the negative electrodes of the multiple protective devices are distributed and connected to various positions of the metal heat radiation reflection structure 105. Figure 5 As shown, there are two protective devices, both installed on the side walls of the furnace body 100. The metal heat radiation reflective structure 105 is an integrated structure, which reduces internal seams and gaps, thereby structurally reducing the possibility of corrosion of the metal heat radiation reflective structure 105. The negative electrodes of multiple protective devices are distributed and connected at various locations on the metal heat radiation reflective structure 105, ensuring that the entire metal heat radiation reflective structure 105 has the same electrical potential, further preventing the occurrence of corrosion.

[0047] In other embodiments, Figure 6 As shown, the metal heat radiation reflective structure includes multiple spaced heat radiation reflective units 1051; the number of protective devices is one, and the negative electrode of the protective device is connected to each heat radiation reflective unit 1051 via parallel leads. The negative electrode of a single protective device is connected to each heat radiation reflective unit 1051 via parallel leads, so that all heat radiation reflective units 1051 are maintained at the same negative potential. This connection method ensures uniform cathodic protection and is less likely to cause localized corrosion caused by potential differences between individual heat radiation reflective units 1051. Parallel connection simplifies circuit design, reduces equipment complexity and maintenance costs. Furthermore, the use of a single protective device saves space.

[0048] In other embodiments, the metal heat radiation reflective structure includes multiple spaced-apart heat radiation reflective units, the number of the protective device is one, and the negative electrode of the protective device is connected in series with the multiple heat radiation reflective units, so that current flows from the DC power supply to the multiple heat radiation reflective units, so that the multiple heat radiation reflective units are maintained at the same low negative potential, achieving cathodic protection. This configuration simplifies circuit design and reduces the need for multiple independent DC power supplies, thereby reducing complexity and cost. In addition, the metal heat radiation reflective structure is cathodically protected, making it less susceptible to corrosion, increasing cleaning cycles, and improving service life.

[0049] In some other embodiments, the metal heat radiation reflecting structure includes a plurality of spaced-apart heat radiation reflecting units; the number of the protective devices is multiple and corresponds one to one with the heat radiation reflecting units, and the negative electrode of each protective device is connected to one of the heat radiation reflecting units. Each metal heat radiation reflecting unit is connected to the negative electrode of an independent DC power supply, so that specific optimization and adjustment can be performed for each heat radiation reflecting unit, ensuring that each unit can independently maintain an appropriate negative potential, thereby inhibiting corrosion of the metal heat radiation reflecting structure, enabling the metal heat radiation reflecting structure to concentrate the heat provided by the heater to the wafer boat, so that the heat distribution on the wafers in the wafer boat is uniform, so that the thickness of the thin film deposited in each area on the same wafer is uniform, and the thickness of the thin film between different wafers is consistent.

[0050] In this embodiment, the DC power supply 40 includes a positive electrode and a negative electrode. The negative electrode is connected to the metal heat radiation reflecting structure 105 to keep the metal heat radiation reflecting structure 105 at a negative potential.

[0051] By connecting the negative electrode of the DC power supply 40 to the metal heat radiation reflection structure 105, the metal heat radiation reflection structure 105 maintains a negative potential, reducing or avoiding electrochemical corrosion reactions of the metal heat radiation reflection structure 105, thereby extending the maintenance cycle of the metal heat radiation reflection structure 105 and extending the service life of the metal heat radiation reflection structure 105. It can make the heat distribution on each wafer in the wafer boat 101 more uniform, so that the thickness uniformity of the thin film deposition in each area on the same wafer is good, and the consistency of the film thickness between different wafers is good.

[0052] In this embodiment, the auxiliary anode 20 is connected to the positive electrode of the DC power supply 40 .

[0053] The auxiliary anode 20 is connected to the positive electrode of a DC power supply 40 and is electrochemically connected to the metal heat radiation reflective structure 105 via an ion conductive medium 30, forming a closed electrochemical protection circuit. This allows the electrochemical reaction to primarily occur on the auxiliary anode 20, rather than on the metal heat radiation reflective structure 105. This effectively suppresses electrochemical corrosion of the metal heat radiation reflective structure 105, thereby increasing the maintenance cycle and service life of the metal heat radiation reflective structure 105. This also provides for more uniform heat distribution across the wafers in the wafer boat 101, resulting in uniform thickness of thin films deposited across regions on the same wafer, and consistent thickness across different wafers.

[0054] In this embodiment, the material activity of the auxiliary anode 20 is higher than that of the metal heat radiation reflecting structure 105. By utilizing the principle of electrochemical cathodic protection, the auxiliary anode 20 is selected to be a material with a higher activity, so that the potential of the metal heat radiation reflecting structure 105 is maintained at a potential lower than that of the auxiliary anode 20, so that the metal heat radiation reflecting structure 105 is replenished with electrons in the electrochemical reaction, and the metal heat radiation reflecting structure 105 is effectively protected from corrosion, thereby suppressing the corrosion process of the metal heat radiation reflecting structure 105.

[0055] As an example, the auxiliary anode 20 can be made of an aluminum-magnesium alloy or a titanium alloy. The electrochemical activity of the aluminum-magnesium alloy or titanium alloy is higher than that of the commonly used metal heat radiation reflective structure 105 materials (such as iron and copper). The high activity of the auxiliary anode 20 facilitates electron release (oxidation reaction) during the electrochemical protection process, while the protected metal heat radiation reflective structure 105 acts as a cathode, obtaining electrons (reduction reaction), thereby reducing or avoiding corrosion.

[0056] It should be noted that the materials of the auxiliary anode 20 include aluminum-magnesium alloy or titanium alloy, not only because of their high activity, but also because they can withstand long-term high temperature and corrosive environment, which is conducive to the normal operation of semiconductor heat treatment equipment for a long time.

[0057] Ion-conductive medium 30 connects metal heat radiation reflective structure 105 and auxiliary anode 20 to form an electrochemical closed circuit. Ion-conductive medium 30 allows electrons to flow from the negative electrode of DC power supply 40 to metal heat radiation reflective structure 105, completing the circuit through auxiliary anode 20. This forms an effective electrochemical barrier, making metal heat radiation reflective structure 105 less susceptible to or less prone to corrosion, thereby extending the maintenance cycle and service life of metal heat radiation reflective structure 105. This also provides for more uniform heat distribution across the wafers in wafer boat 101, resulting in uniform thickness of thin films deposited across different regions of the same wafer, and consistent thickness across different wafers.

[0058] In this embodiment, the ion conductive medium 30 includes any one of an electrolyte, a gel electrolyte, and a solid electrolyte. The electrolyte can provide high ionic conductivity and is suitable for scenarios requiring rapid electron transmission; the gel or solid electrolyte may provide higher chemical and thermal stability and is suitable for high-temperature environments.

[0059] In this embodiment, Figure 1 As shown, the metal heat radiation reflecting structure 105 is connected to the electrical connection structure 106 , and the electrical connection structure 106 and the auxiliary anode 20 are at least partially immersed in the electrolyte.

[0060] While the electrolyte conducts ions, a stable electrochemical environment is established between the metal heat radiation reflecting structure 105 and the auxiliary anode 20 via the electrical connection structure 106. By immersing at least a portion of the electrical connection structure 106 and the auxiliary anode 20 in the electrolyte, the electrolyte ensures that an effective electrochemical gradient can be formed between the auxiliary anode 20 and the metal heat radiation reflecting structure 105. Because the metal heat radiation reflecting structure 105 is at a negative potential, the ions in the electrolyte migrate under the action of the electric field, promoting the sacrificial consumption of the auxiliary anode 20 material while protecting the metal heat radiation reflecting structure 105 from corrosion.

[0061] In other embodiments, Figure 7 As shown, the ion conductive medium 30 includes an electrolyte, and the electrolyte at least partially immerses the metal heat radiation reflecting structure 105 and the auxiliary anode 20. While conducting ions, the electrolyte also establishes a stable electrochemical environment between the metal heat radiation reflecting structure 105 and the auxiliary anode 20. By immersing at least a portion of the metal heat radiation reflecting structure 105 and the auxiliary anode 20 with the electrolyte, the electrolyte ensures that an effective electrochemical gradient can be formed between the auxiliary anode 20 and the metal heat radiation reflecting structure 105. Because the metal heat radiation reflecting structure 105 is at a negative potential, ions in the electrolyte migrate under the action of the electric field, promoting sacrificial consumption of the auxiliary anode 20 material while protecting the metal heat radiation reflecting structure 105 from corrosion.

[0062] In this embodiment, the auxiliary anode 20 includes a plurality of anode units connected in series.

[0063] The auxiliary anode 20 includes multiple anode units connected in series, which can disperse the consumption of potential, which helps to evenly achieve the corrosion of the auxiliary anode 20. Compared with the case where the auxiliary anode 20 is a single entity, it can avoid rapid consumption at a single point and extend the service life of the protection device; the auxiliary anode 20 includes multiple anode units connected in series, so that when the function of a certain anode unit decays or is damaged, other anode units can continue to assume the protection role, thereby enhancing the overall stability and reliability of the protection device.

[0064] like Figure 8As shown, the protection device also includes: a monitoring unit 50 for detecting the auxiliary anode 20, the monitoring unit 50 includes: a reference electrode 51, providing a stable reference potential; a detection circuit module 52, connected to the reference electrode 51 and the auxiliary anode 20, the detection circuit module 52 includes: a potential measuring unit 521, measuring the potential difference between the auxiliary anode 20 and the reference electrode 51; a current measuring unit 522, monitoring the current value passing through the auxiliary anode 20; an alarm module 53, connected to the detection circuit module 52, for recording in real time the potential difference obtained by the potential measuring unit 521 and the current value obtained by the current measuring unit 522, and issuing an alarm when the potential difference deviates from the preset range of the potential difference and the current value deviates from the preset range of the current.

[0065] In this embodiment, the reference electrode 51 provides a stable potential reference point for accurately measuring the potential of the auxiliary anode 20. Specifically, the reference electrode 51 is made of a high temperature resistant and corrosion resistant material, such as a silver / silver chloride electrode or a platinum electrode.

[0066] In this embodiment, the potential measurement unit 521 uses a high impedance potentiometer or a voltage sensor to measure the potential difference between the auxiliary anode 20 and the reference electrode 51. The current measurement unit 522 uses a shunt or a current sensor to monitor the current passing through the auxiliary anode 20.

[0067] It should be noted that when the potential difference between the auxiliary anode 20 and the reference electrode 51 is greater than the preset maximum potential difference, the surface metal thermal radiation reflection structure 105 is insufficiently protected and the metal thermal radiation reflection structure 105 may be corroded; when it is found that the potential difference between the auxiliary anode 20 and the reference electrode 51 is less than the preset minimum potential difference, overprotection may occur, and hydrogen is generated on the surface of the metal thermal radiation reflection structure 105, causing problems such as hydrogen embrittlement.

[0068] It should be noted that when the current value in the auxiliary anode 20 is greater than the preset current value, over-protection of the metal thermal radiation reflection structure 105 may occur, resulting in accelerated consumption of the auxiliary anode 20; when the current value in the auxiliary anode 20 is less than the preset current value, insufficient protection of the metal thermal radiation reflection structure 105 may occur, resulting in corrosion of the metal thermal radiation reflection structure 105.

[0069] Although the present invention is disclosed as above, it is not limited thereto. Any person skilled in the art may make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be subject to the scope defined by the claims.

Claims

1. A semiconductor heat treatment device, characterized in that: include: furnace body; a process tube disposed in the furnace body; and a wafer boat disposed in the process tube, the wafer boat being used to carry wafers; A wafer boat base is located directly below the furnace body and is used to support the wafer boat and drive the wafer boat and wafers to rotate; A heater is located in the furnace body and outside the process tube, and is used to provide heat to the process tube to achieve heat treatment of the wafers in the process tube; a metal heat radiation reflecting structure, located in the furnace body and arranged between the heater and the furnace body; The protection device comprises: a DC power supply including a positive electrode and a negative electrode, wherein the negative electrode is connected to the metal heat radiation reflecting structure and is used to keep the metal heat radiation reflecting structure at a negative potential; An auxiliary anode is connected to the positive electrode; and an ion conductive medium connects the metal heat radiation reflection structure and the auxiliary anode to realize an electrochemical closed loop.

2. The semiconductor heat treatment equipment according to claim 1, wherein The protection device is arranged at one or more of the side wall, bottom and top of the furnace body.

3. The semiconductor heat treatment equipment according to claim 1, wherein The metal heat radiation reflection structure includes a plurality of spaced heat radiation reflection units; There are multiple protection devices, and they correspond one to one with the heat radiation reflecting units, and the negative electrode of each protection device is connected to one of the heat radiation reflecting units; Alternatively, the number of the protection device is one, and the negative electrode of the protection device is connected in series with a plurality of the heat radiation reflecting units, or the negative electrode of the protection device is connected to one of the heat radiation reflecting units respectively through parallel leads.

4. The semiconductor heat treatment equipment according to claim 1, wherein The metal heat radiation reflection structure is a whole; There are multiple protection devices, and the negative electrodes of the multiple protection devices are distributed and connected to various positions of the metal heat radiation reflection structure.

5. The semiconductor heat treatment equipment according to claim 1, wherein The activity of the material of the auxiliary anode is higher than that of the material of the metal heat radiation reflection structure.

6. The semiconductor heat treatment equipment according to claim 1, wherein The material of the auxiliary anode includes: aluminum-magnesium alloy or titanium alloy.

7. The semiconductor heat treatment equipment according to claim 1, wherein The ion conductive medium includes any one of an electrolyte, a gel electrolyte and a solid electrolyte.

8. The semiconductor heat treatment equipment according to claim 1, wherein The ion conductive medium includes an electrolyte; The electrolyte at least partially immerses the metal heat radiation reflecting structure and the auxiliary anode; Alternatively, the metal heat radiation reflecting structure is connected to an electrical connection structure, and the electrical connection structure and the auxiliary anode are at least partially immersed in the electrolyte.

9. The semiconductor heat treatment equipment according to claim 1, wherein The protection device further includes: a monitoring unit for detecting the auxiliary anode, the monitoring unit including: Reference electrode, providing a stable reference potential; a detection circuit module connected to the reference electrode and the auxiliary anode, the detection circuit module comprising: a potential measurement unit for measuring the potential difference between the auxiliary anode and the reference electrode; a current measuring unit for monitoring a current value passing through the auxiliary anode; An alarm module is connected to the detection circuit module, and is used to record in real time the potential difference obtained by the potential measurement unit and the current value obtained by the current measurement unit, and to issue an alarm when the potential difference deviates from the range allowed by the potential preset value and the current value deviates from the range allowed by the current preset value.

10. The semiconductor heat treatment equipment according to claim 1, wherein The auxiliary anode includes a plurality of anode units connected in series.

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