Wafer table tray capable of uniformly heating

Abstract

The utility model discloses a wafer table tray capable of uniformly heating, which comprises a table tray main body, a heating sheet and a base which are fixed into a whole, the heating sheet is of a three-layer structure, the upper layer and the lower layer are made of polyimide materials, resistance wires are evenly laid between the upper layer and the lower layer, and the two ends of the resistance wires are connected with positive and negative electrodes. According to the utility model, the heating sheet with the area similar to that of the wafer table top is arranged below the wafer table top, the resistance wires are uniformly laid in the heating sheet, the two ends of each resistance wire extend out of one side of the heating sheet to form the positive terminal and the negative terminal, after being electrified, the resistance wires heat, and the uniformly laid resistance wires enable the wafer table top to uniformly heat and rapidly heat to a set temperature, so that the temperature of the wafer table top is increased; film pasting or film tearing operation can be conveniently carried out on the wafer, and the processing efficiency of the wafer is improved.

Description

Technical Field

[0001] The utility model relates to the technical field of wafer processing, in particular to a uniformly heated wafer table. Background Art

[0002] When wafers leave the wafer fab, they are relatively thick. During packaging, they need to be thinned to accommodate smaller package sizes. To protect the wafer's circuit layer during wafer thinning, a film is applied to the wafer's circuit layer to prevent scratches and contamination during thinning and grinding. After wafer thinning, this protective film must be removed without damaging the wafer.

[0003] During the lamination process, some lamination processes have special temperature requirements, and the wafer platen needs to be heated to a specific temperature to ensure a better lamination between the film and the wafer. Similarly, during the film removal process, some lamination processes have special temperature requirements, and the wafer platen needs to be heated to a specific temperature to ensure a better separation between the film and the wafer.

[0004] Currently, existing wafer stages have heating rods installed on the side. These rods heat up one location on the wafer stage first, then conduct heat through the stage itself, stabilizing the entire stage at a consistent temperature. However, this heating method uses a relatively small heat source, resulting in slow overall heating and uneven initial heating, which impacts film application and removal efficiency. Utility Model Content

[0005] In order to solve the above problems, the utility model provides a uniformly heated wafer table, which can quickly and uniformly heat the table surface and improve the wafer processing efficiency.

[0006] To this end, the technical solution of the utility model is: a uniformly heated wafer table, including a table body, a heating plate and a base, the three of which are fixed as one; the heating plate is a three-layer structure, the upper and lower layers are made of polyimide material, and the middle is evenly covered with resistance wire, and the two ends of the resistance wire are connected to positive and negative poles respectively.

[0007] On the basis of the above solution and as a preferred solution of the above solution: a heat insulating sheet is provided under the heating sheet, the heat insulating sheet is placed between the heating sheet and the base, and the area of the heat insulating sheet is greater than or equal to the area of the heating sheet.

[0008] On the basis of the above solution and as a preferred solution of the above solution: the heating plate is a circular structure, and the resistance wire is distributed in a ring-shaped winding shape.

[0009] On the basis of the above solution and as a preferred solution of the above solution: the table plate body has a ceramic table top, and the ceramic table top is provided with a through hole.

[0010] On the basis of the above solution and as a preferred solution of the above solution: a positive terminal and a negative terminal of the resistance wire extend from one side of the heating plate.

[0011] Compared with the prior art, the beneficial effects of the present invention are:

[0012] 1. A heating plate with an area similar to that of the wafer table is set under the wafer table. Resistance wires are evenly laid inside the heating plate. The two ends of the resistance wires extend from one side of the heating plate to form a positive terminal and a negative terminal. After power is turned on, the resistance wires heat up. The evenly laid resistance wires make the wafer table evenly heated and quickly heat up to the set temperature, which facilitates the film application or tearing operation on the wafer and speeds up the wafer processing efficiency.

[0013] 2. Install a heat insulation sheet under the heating plate to effectively isolate the heating plate from the base and prevent excessive heat from being transferred to the base under the plate.

[0014] 3. Customize heating plates of different specifications according to the structure of the wafer table, so that each wafer table can be heated evenly, speeding up the heating speed and making the heating more uniform. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] The following is a further detailed description of this embodiment with reference to the accompanying drawings.

[0016] Figure 1 It is a structural diagram of the utility model;

[0017] Figure 2 This is an exploded view of the parts of the utility model;

[0018] Figure 3 This is a schematic diagram of the structure of the heating plate of the utility model;

[0019] Figure 4 This is a structural diagram of the resistance wire of the utility model.

[0020] The components marked in the figure are: table main body 1, through hole 11, heating plate 2, resistance wire 21, positive electrode terminal 22, negative electrode terminal 23, heat insulation plate 3, and base 4. DETAILED DESCRIPTION

[0021] In the description of the present invention, it should be noted that, for directional words, such as the terms "center", "horizontal (X)", "longitudinal (Y)", "vertical (Z)", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise" and so on, indicating directions and positional relationships are based on the directions or positional relationships shown in the accompanying drawings, which are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific direction, be constructed and operated in a specific direction, and cannot be understood as limiting the specific protection scope of the present invention.

[0022] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features. Therefore, the terms "first" and "second" may explicitly or implicitly refer to one or more of these features. In the description of this utility model, "several" and "a number" mean two or more, unless otherwise specifically defined.

[0023] See the accompanying drawings. The uniformly heated wafer table described in this embodiment includes a table body 1, a heating plate 2, a thermal insulation plate 3, and a base 4, all fixed together. The table body 1 has a ceramic table top with through-holes 11 for connection to a negative pressure device. The negative pressure device draws air, creating a negative pressure state in the through-holes, which serves to absorb the wafer, facilitate wafer movement, and facilitate film application or removal.

[0024] The heating plate 2 is a three-layer structure, the upper and lower layers are made of polyimide, and the middle is evenly covered with resistance wire 21. The heating plate 2 is a circular structure, and the resistance wire 21 is distributed in a ring-shaped manner. One end of the resistance wire 21 extends to form the positive terminal 22, and the other end extends to form the negative terminal 23. The resistance wire 21 is wound in circles, according to Figure 4 As shown, the resistance wire 21 is a complete piece, and the entire heating plate 2 is heated at the same time, which can ensure that the heating plate 2 is heated evenly.

[0025] A heat insulating sheet 3 is provided below the heating sheet 2 and is placed between the heating sheet 2 and the base 4. The area of the heat insulating sheet 3 is not less than that of the heating sheet 2. The heat insulating sheet 3 can effectively isolate the heating sheet 2 from the base 4 and prevent excessive heat from being transferred to the base 4 under the table.

[0026] Heating plates of different specifications are customized according to the structure of the wafer table, including 12-inch film laminating table heating plates, 8-inch film laminating table heating plates, 12-inch film tearing table heating plates, 8-inch film tearing table heating plates, etc., so that each wafer table can be heated evenly, which speeds up the heating speed and makes the heating more uniform.

[0027] During use, a heating plate 2 with an area approximately the same as the wafer table surface is provided under the table body 1. A resistance wire 21 is evenly laid inside the heating plate 2. Both ends of the resistance wire 21 extend from one side of the heating plate to form a positive terminal 22 and a negative terminal 23. After power is turned on, the resistance wire 21 heats up. The evenly laid resistance wire 21 causes the table body 1 to heat up evenly and quickly heat up to the set temperature, making it convenient to apply or tear off the film on the wafer and speeding up the processing efficiency of the wafer.

[0028] The above description is merely a preferred embodiment of the present invention. The scope of protection of the present invention is not limited to the above embodiment. All technical solutions based on the concept of the present invention are within the scope of protection of the present invention. It should be noted that for those skilled in the art, certain improvements and modifications that do not depart from the principles of the present invention should also be considered within the scope of protection of the present invention.

Claims

1. A uniformly heated wafer stage, characterized by: It includes a table main body, a heating plate and a base, which are fixed as a whole; the heating plate has a three-layer structure, the upper and lower layers are made of polyimide material, and the middle is evenly covered with resistance wire, and the two ends of the resistance wire are connected to positive and negative poles.

2. The uniformly heated wafer stage according to claim 1, wherein: A heat insulating sheet is provided below the heating sheet and is placed between the heating sheet and the base, and the area of the heat insulating sheet is greater than or equal to the area of the heating sheet.

3. The uniformly heated wafer stage according to claim 1, wherein: The heating plate is a circular structure, and the resistance wire is distributed in a ring-shaped winding.

4. The uniformly heated wafer stage according to claim 1, wherein: The table plate main body is provided with a ceramic table top, and the ceramic table top is provided with a through hole.

5. The uniformly heated wafer stage according to claim 1, wherein: A positive terminal and a negative terminal of the resistance wire extend from one side of the heating plate.

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