Wafer heating bearing device and rapid heat treatment equipment

Abstract

The utility model provides a wafer heating and bearing device, and solves the technical problem that the temperature is not uniform when a wafer is heated in an RTP process. The heating bearing device comprises a rotary table, a wafer bearing table, a base, an edge ring loader and an edge ring. The heating bearing device is sequentially provided with the rotary table, the wafer bearing table, the base, the edge ring loader and the edge ring from bottom to top. The wafer bearing table is located in the base, a baffle ring is arranged on the inner side, close to the wafer bearing table, of the edge ring in the vertical direction, the two ends of the baffle ring extend to the upper side and the lower side of the edge ring respectively, and the two ends of the baffle ring are bent towards one side of the wafer bearing table. The utility model also discloses wafer rapid heat treatment equipment. According to the utility model, the irradiation of the outer ring of the wafer is more uniform, and the temperature uniformity of the wafer is ensured.

Description

Technical Field

[0001] The utility model relates to the technical field of wafer processing, and more specifically, to a wafer heating carrying device and rapid thermal processing equipment. Background Art

[0002] The RTP (rapid thermal annealing) process is an indispensable process link in the semiconductor manufacturing process. It can activate the doping elements after ion implantation. Compared with furnace tube equipment, it has the advantages of low thermal budget, precise control of single-wafer process, and prevention of excessive diffusion of doping elements. It is one of the key technologies for the preparation of advanced ultra-shallow junction processes.

[0003] In the RTP process technology, the uniformity of the heat on the wafer surface is an important factor affecting the concentration distribution of the doped ions after implantation and the subsequent yield. The current RTP equipment achieves temperature uniformity in each local area of the wafer by adjusting the power between the lamp zones. However, during the RTP process, Figure 1 As shown, the outer ring of wafer 6 is subjected to excessive irradiation, resulting in an excessively high temperature of the outer ring, which affects the temperature uniformity of the wafer.

[0004] It can be seen that the existing RTP machine wafer carrier does not effectively solve the problem of uneven irradiation of the outer ring of the wafer during the RTP process, which leads to a decrease in wafer temperature uniformity. Utility Model Content

[0005] The technical problem to be solved by the present invention is to address the above-mentioned deficiencies in the prior art, and the purpose of the present invention is to provide a wafer heating carrier device and a rapid thermal processing equipment.

[0006] The first technical solution of the present invention is: a wafer heating supporting device, comprising a turntable, a wafer supporting platform, a base, an edge ring carrier, and an edge ring, wherein the heating supporting device is sequentially provided with the turntable, the wafer supporting platform, the base, the edge ring carrier and the edge ring from bottom to top; the wafer supporting platform is located in the base, and at least three supporting ejectors are provided on the wafer supporting platform, the edge ring carrier and the edge ring are sequentially sleeved in the base, the edge ring is arranged around the outer periphery above the wafer supporting platform, and its lower surface is parallel to the apex of the supporting ejector pins, and a baffle ring is provided on the inner side of the edge ring close to the wafer supporting platform in the vertical direction, and the two ends of the baffle ring extend to the upper and lower sides of the edge ring respectively, and the two ends of the baffle ring are bent toward one side of the wafer supporting platform.

[0007] As a further improvement, the cross section of the baffle ring is arc-shaped.

[0008] Furthermore, the arc-shaped ends of the baffle ring are tangent to the outer edge of the wafer in the vertical direction, and the cross-sectional width of the baffle ring gradually decreases along the directions of its two ends.

[0009] Furthermore, the edge ring carrier includes a support ring and a plurality of support rods, the support ring is mounted on a base, the plurality of support rods are evenly fixed in the support ring, and the edge ring is mounted on the plurality of support rods.

[0010] Furthermore, the edge ring and the edge ring carrier are connected via a detachable component.

[0011] Furthermore, the detachable component is a quartz bolt, and the edge ring and the support rod of the edge ring carrier are positioned and fixed by the quartz bolt.

[0012] Furthermore, the wafer carrying platform is sleeved in the turntable, and the turntable and the wafer carrying platform are made of transparent quartz material.

[0013] Furthermore, an air flotation drive mechanism is arranged under the turntable, and the air flotation drive mechanism includes a first air flotation stator, a second air flotation stator and a third air flotation stator. There are at least three first air flotation stators, and the nozzle of the first air flotation stator is arranged vertically toward the back of the turntable, for stably floating the turntable in a plane; the nozzle of the second air flotation stator is arranged obliquely toward the back of the turntable, for driving the turntable to accelerate rotation or maintain a preset rotation rate; the nozzle of the third air flotation stator is arranged obliquely toward the back of the turntable, and the nozzle of the third air flotation stator is opposite to the nozzle of the second air flotation stator, for decelerating the rotating turntable.

[0014] The second technical solution of the present utility model is: a wafer rapid thermal processing equipment, including a process chamber, the process chamber is provided with an air inlet, an air outlet, an upper heating device, a lower heating device and the above-mentioned wafer heating supporting device; the wafer heating supporting device is arranged between the upper heating device and the lower heating device; the wafer heating supporting device is communicated with the air inlet and the air outlet, and is isolated from the airflow of the upper heating device and the lower heating device.

[0015] Furthermore, transparent quartz windows are provided at positions of the upper heating device and the lower heating device facing the wafer heating supporting device, and the wafer heating supporting device is located on the transparent quartz windows on the lower heating device.

[0016] Compared with the prior art, the utility model has the following advantages:

[0017] 1. The wafer heating support device of the present invention uses a baffle ring to block the high-irradiation areas on the front and back of the outermost ring of the wafer, which can block the overheating radiation of the outer ring of the wafer caused by the heating device in the equipment, thereby ensuring the uniformity of the heating temperature of the wafer.

[0018] 2. The process chamber of the wafer rapid thermal processing equipment of the present invention is provided with a heating device and a wafer heating support device. When the wafer is thermally annealed, the shielding ring of the wafer heating support device effectively blocks the overheating radiation of the outermost circle of the wafer, so that the heating device does not need to adjust the heating power by area, thereby effectively reducing the power adjustment pressure of the equipment and effectively saving costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 It is a structural diagram of the prior art;

[0020] Figure 2 It is another structural schematic diagram of the prior art;

[0021] Figure 3 This is an exploded view of the wafer heating and carrying device structure of the present invention;

[0022] Figure 4 This is a schematic structural diagram of the base in the utility model;

[0023] Figure 5 This is a schematic diagram of the cross-sectional structure of the base in the utility model;

[0024] Figure 6 This is a schematic structural diagram of the wafer heating and carrying device of the present invention when in use;

[0025] Figure 7 This is a schematic structural diagram of the wafer rapid thermal processing equipment of the present invention.

[0026] Among them: 1-base, 2-wafer carrier, 3-edge ring, 4-baffle ring, 5-edge ring carrier, 6-wafer, 7-support ejector, 8-lower heating device, 9-turntable, 10-first air floating stator, 11-second air floating stator, 12-third air floating stator, 13-process chamber, 14-air inlet, 15-air outlet, 16-upper heating device, 17-transparent quartz window, 18-first air supply pipeline, 19-second air supply pipeline, 20-third air supply pipeline; 51-support ring, 52-support rod. DETAILED DESCRIPTION

[0027] The present invention will be further described below with reference to the specific embodiments in the accompanying drawings.

[0028] The main reason for the excessively high temperature of the outer ring of the wafer during the current RTP process is that during the heat treatment process, the heating device lamps will adjust the power of the heating device in different areas to achieve temperature uniformity in each local area of the wafer. However, since the arrangement area of the lamps in the heating device of the heat treatment equipment is larger than the surface area of the wafer, the irradiation of the outer ring lamps during the heat treatment will cause the outermost circle of the wafer to overheat, resulting in excessive irradiation of the edge circle and causing the temperature to be higher than the center. Please refer to Figure 1 For this type of edge overheating phenomenon, such as Figure 2 As shown, some existing heat treatment equipment installs an edge ring 3 around the periphery of wafer 6 to shield the over-irradiation area. Although this reduces over-irradiation to a certain extent, the gap between edge ring 3 and wafer 6 still causes the outer edge of the wafer to be subjected to excessively high temperatures, resulting in a decrease in wafer process performance consistency. This is particularly noticeable in double-sided heating RTP machines. Furthermore, this tiny over-irradiation area increases the power regulation pressure of the lamps between different zones. In view of this, the present invention proposes a wafer heating support device for supporting wafer 6.

[0029] See Figures 3 to 6 The wafer heating and carrying device of the present invention comprises a turntable 9, a wafer carrying platform 2, a base 1, an edge ring carrier 5, and an edge ring 3. Specifically, the heating and carrying device is provided with a turntable 9, a wafer carrying platform 2, a base 1, an edge ring carrier 5, and an edge ring 3 in sequence from bottom to top; wherein, the wafer carrying platform 2 is located in the base 1, and at least three supporting ejectors 7 are provided on the wafer carrying platform 2, and the three supporting ejectors 7 are evenly distributed on the top surface of the wafer carrying platform 2, and the top of the supporting ejectors 7 is a pointed structure, the edge ring carrier 5 and the edge ring 3 are sequentially sleeved in the base 1, and the edge ring 3 is arranged around the outer periphery above the wafer carrying platform 2, and its lower surface is parallel to the apex of the supporting ejectors 7, and a baffle ring 4 is provided on the inner side of the edge ring 3 close to the wafer carrying platform 2 in the vertical direction. That is, the baffle ring 4 is arranged perpendicular to the edge ring 3. The baffle ring 4 is made of silicon carbide and plays the main role of radiation shielding. The two ends of the baffle ring 4 extend to the upper and lower sides of the edge ring 3 respectively. The two ends of the baffle ring 4 are bent toward one side of the wafer supporting platform 2 so as to block the upper and lower edge positions of the wafer 6; in the working state, the wafer 6 is placed on the wafer supporting platform 2 and supported by the supporting pins 7. The two bent ends of the baffle ring 4 are tangent to the wafer 6 in the vertical direction, that is, the two bent ends of the baffle ring 4 are flush with the outer edge surface of the wafer 6 to avoid a gap between the baffle ring 4 and the wafer 6.

[0030] The wafer heating support device of the present invention is provided with a baffle ring 4 on the edge ring 3. When the wafer 6 is placed on the wafer heating support device, the baffle ring 4 can block the high-irradiation areas on the front and back sides of the outermost ring of the wafer, and can block the overheating radiation of the outer ring of the wafer caused by the heating device in the equipment, thereby ensuring the temperature uniformity of the wafer when heated.

[0031] Preferably, Figure 6 As shown, the baffle ring 4 has an arcuate cross-section. This arcuate cross-section ensures that the baffle ring 4 can shield the upper and lower edges of the wafer at both ends while allowing a certain gap between the middle of the baffle ring 4 and the wafer 6 to allow the wafer to be suspended and rotated during subsequent annealing. In other embodiments, the baffle ring 4 may also have a U-shaped cross-section.

[0032] Furthermore, the arcuate ends of the baffle ring 4 are vertically tangent to the outer edge of the wafer 6, and the cross-sectional width of the baffle ring 4 gradually decreases along its ends. The arcuate ends of the baffle ring 4 being vertically tangent to the outer edge of the wafer provide maximum shielding effect on the outer edge of the wafer. While ensuring that the ends of the baffle ring 4 can shield the upper and lower edges of the wafer, reducing the cross-sectional width effectively reduces consumables and reduces costs.

[0033] Preferably, see Figure 6 The arc chord length b is set at 2.5 mm, which is three times the normal wafer thickness. This chord length reduces the impact on the airflow during heat treatment while ensuring that the upper and lower edges of the outer ring of the wafer are not affected by excessive heat radiation to the greatest extent, and the design of this size retains a high machining capability; the selection of specific arc parameters is not limited here, and those skilled in the art can select a suitable arc chord length b of the baffle ring 4 according to specific conditions such as equipment type, wafer thickness, and process environment.

[0034] Preferably, Figure 5 As shown, the edge ring carrier 5 includes a support ring 51 and a plurality of support rods 52. The support ring 51 is mounted on the base 1. The support rods 52 are L-shaped rods and are evenly fixed within the support ring 51. The edge ring 3 is mounted on the plurality of support rods 52. Using the edge ring carrier 5 composed of the support ring 51 and the plurality of support rods 52 to support and mount the edge ring 3 can effectively reduce consumables, while also reducing the impact of the edge ring carrier 5 on airflow, further improving heating uniformity.

[0035] Preferably, the edge ring 3 and the edge ring carrier 5 are detachably connected via detachable components. Specifically, the edge ring 3 and the support rod 52 of the edge ring carrier 5 are positioned and fixed via quartz bolts to achieve detachable connection, which is convenient for disassembly and maintenance.

[0036] Preferably, the wafer carrier 2 is installed in the turntable 9. The turntable 9 and the wafer carrier 2 are made of transparent quartz material with high light transmittance. They will not block the radiation below and ensure that the light can be radiated to the wafer 6.

[0037] Preferably, Figure 3 As shown, an air floating drive mechanism is provided under the turntable 9, and the air floating drive mechanism includes a first air floating stator 10, a second air floating stator 11 and a third air floating stator 12, wherein there are at least three first air floating stators 10, and the three first air floating stators 10 are evenly distributed. The first air floating stator 10 is connected to the air source through a first air supply pipeline 18, and the gas output by the air source is transported to the first air floating stator 10 through the first air supply pipeline 18. The first air floating stator 10 has a nozzle arranged vertically upward, and the nozzle of the first air floating stator 10 is arranged vertically toward the back of the turntable 9. The gas is ejected from the nozzle of the first air floating stator 10 and acts on the turntable 9, so as to stably float the turntable 9 in a horizontal plane; the second air floating stator 11 is connected to the air source through a second air supply pipeline 19, and the gas output by the air source is transported to The second air-floating stator 11 has an inclined extending nozzle, and the nozzle of the second air-floating stator 11 is inclined toward the back of the turntable 9. The gas is ejected from the nozzle of the second air-floating stator 11 and acts on the turntable 9, which is used to drive the turntable 9 to accelerate the rotation or maintain it at a preset rotation rate; the third air-floating stator 12 is connected to the air source through the third air supply pipeline 20, and the gas output by the air source is transported to the third air-floating stator 12 through the third air supply pipeline 20. The third air-floating stator 12 has an inclined extending nozzle, and the nozzle of the third air-floating stator 12 is inclined toward the back of the turntable 9, and the direction of the nozzle of the third air-floating stator 12 is opposite to that of the nozzle of the second air-floating stator 11. The high-pressure gas is ejected from the nozzle of the third air-floating stator 12 and acts on the turntable 9, which is used to decelerate the rotating turntable 9 until it stops rotating. It should be pointed out that a guide tooth can be provided on the side of the turntable 9 facing the second air-floating stator 11 and the third air-floating stator 12. Several guide teeth are arranged around the circumference of the turntable 9, which can increase the friction between the air-floating stator and the airflow, making it easier for the air-floating stator to drive the turntable 9 to accelerate or decelerate.

[0038] The wafer heating support device of the present invention adopts an air-floating drive mechanism composed of a first air-floating stator 10, a second air-floating stator 11 and a third air-floating stator 12 to drive the suspension, rotation and stop of the wafer 6, so that the wafer 6 is heated in a suspended and moving state, further improving the heating uniformity of the wafer and ensuring the smooth completion of the wafer annealing process.

[0039] See Figure 7The present embodiment provides a wafer rapid thermal processing device, including a process chamber 13, which is provided with an air inlet 14, an air outlet 15, an upper heating device 16, a lower heating device 8 and a wafer heating supporting device; wherein, the upper heating device 16 and the lower heating device 8 are specifically lamps, and the wafer heating supporting device is arranged between the upper heating device 16 and the lower heating device 8; the wafer heating supporting device is communicated with the air inlet 14 and the air outlet 15, and is isolated from the air flow of the upper heating device 16 and the lower heating device 8, that is, the wafer heating supporting device is spaced apart from the upper heating device 16 and the lower heating device 8 to ensure that air flow can enter and exit.

[0040] Preferably, a transparent quartz window 17 is provided at the position of the upper heating device 16 and the lower heating device 8 facing the wafer heating carrier, and the wafer heating carrier is located on the transparent quartz window 17 on the lower heating device 8 to ensure that light can be radiated to the wafer 6.

[0041] The process chamber of the wafer rapid thermal processing equipment of this embodiment is provided with a heating device and a wafer heating support device. When the wafer is thermally annealed, the shielding ring of the wafer heating support device effectively blocks the overheating radiation of the outermost circle of the wafer, so that the heating device does not need to adjust the heating power by region, thereby effectively reducing the power adjustment pressure of the equipment and effectively saving costs.

[0042] The above is only a preferred embodiment of the present invention. It should be pointed out that for those skilled in the art, several deformations, size changes and improvements can be made without departing from the structure of the present invention. These will not affect the effect of the implementation of the present invention and the practicality of the patent.

Claims

1. A wafer heating and carrying device for carrying a wafer (6), characterized in that: The heating support device comprises a turntable (9), a wafer carrier (2), a base (1), an edge ring carrier (5), and an edge ring (3); the turntable (9), the wafer carrier (2), the base (1), the edge ring carrier (5), and the edge ring (3) are sequentially arranged from bottom to top; the wafer carrier (2) is located in the base (1); at least three supporting pins (7) are arranged on the wafer carrier (2); the edge ring carrier (5) and the edge ring (3) are sequentially sleeved in the base (1); the edge ring (3) is arranged around the upper periphery of the wafer carrier (2); the lower surface of the edge ring (3) is parallel to the apex of the supporting pin (7); a baffle ring (4) is provided on the inner side of the edge ring (3) close to the wafer carrier (2) in a vertical direction; the two ends of the baffle ring (4) extend to the upper and lower sides of the edge ring (3), respectively; and the two ends of the baffle ring (4) are bent toward one side of the wafer carrier (2).

2. The wafer heating and carrying device according to claim 1, characterized in that: The cross section of the baffle ring (4) is arc-shaped.

3. The wafer heating and carrying device according to claim 2, characterized in that: The arc-shaped ends of the baffle ring (4) are tangent to the outer edge of the wafer (6) in the vertical direction, and the cross-sectional width of the baffle ring (4) gradually decreases along the directions of its two ends.

4. The wafer heating and carrying device according to claim 1, characterized in that: The edge ring carrier (5) includes a support ring (51) and a plurality of support rods (52), wherein the support ring (51) is mounted on the base (1), the plurality of support rods (52) are evenly fixed in the support ring (51), and the edge ring (3) is mounted on the plurality of support rods (52).

5. The wafer heating and carrying device according to claim 4, characterized in that: The edge ring (3) and the edge ring carrier (5) are connected via a detachable component.

6. The wafer heating and carrying device according to claim 5, characterized in that: The detachable component is a quartz bolt, and the edge ring (3) and the support rod (52) of the edge ring carrier (5) are positioned and fixed by the quartz bolt.

7. The wafer heating and carrying device according to claim 1, characterized in that: The wafer carrying platform (2) is sleeved in the turntable (9), and the turntable (9) and the wafer carrying platform (2) are made of transparent quartz material.

8. The wafer heating and carrying device according to claim 6, characterized in that: An air flotation drive mechanism is arranged below the turntable (9), and the air flotation drive mechanism includes a first air flotation stator (10), a second air flotation stator (11) and a third air flotation stator (12). There are at least three first air flotation stators (10). The nozzle of the first air flotation stator (10) is arranged vertically toward the back of the turntable (9) for stably flotating the turntable (9) in a plane; the nozzle of the second air flotation stator (11) is arranged obliquely toward the back of the turntable (9) for driving the turntable (9) to accelerate rotation or maintain at a preset rotation rate; the nozzle of the third air flotation stator (12) is arranged obliquely toward the back of the turntable (9), and the direction of the nozzle of the third air flotation stator (12) is opposite to the direction of the nozzle of the second air flotation stator (11), for decelerating the rotating turntable (9).

9. A wafer rapid thermal processing device, characterized in that: The invention comprises a process chamber (13), wherein the process chamber (13) is provided with an air inlet (14), an air outlet (15), an upper heating device (16), a lower heating device (8) and a wafer heating support device according to any one of claims 1 to 8; the wafer heating support device is arranged between the upper heating device (16) and the lower heating device (8); the wafer heating support device is communicated with the air inlet (14) and the air outlet (15), and is isolated from the airflow of the upper heating device (16) and the lower heating device (8).

10. The rapid thermal processing equipment according to claim 9, characterized in that Transparent quartz windows (17) are provided at positions of the upper heating device (16) and the lower heating device (8) facing the wafer heating carrier, and the wafer heating carrier is located on the transparent quartz window (17) on the lower heating device (8).

Images