Silicon carbide-based high-frequency high-voltage power supply and power supply equipment

Abstract

The embodiment of the utility model provides a silicon carbide-based high-frequency high-voltage power supply and power supply equipment. The silicon carbide-based high-frequency high-voltage power supply comprises a direct-current power supply, an H-bridge inverter, a resonant capacitor, an inductor, a transformer, a controller and a full-bridge high-voltage rectifying circuit, the H-bridge inverter comprises three-phase bridge silicon carbide modules and a drive circuit, wherein the number of the three-phase bridge silicon carbide modules is a multiple of two. The direct-current power supply inputs direct-current power to the H-bridge inverter; the controller inputs two driving signals to the H-bridge inverter in an inversion period; the H-bridge inverter inverts the direct-current power supply based on the driving signal and outputs high-frequency alternating current through two output ends of the H-bridge inverter; the high-frequency alternating current passes through series resonance of the resonant capacitor and the inductor to obtain converted high-frequency alternating current; the transformer boosts the converted high-frequency alternating current according to a transformation parameter and outputs second high-frequency alternating current; and the full-bridge high-voltage rectifying circuit rectifies the second high-frequency alternating current and outputs a direct-current high-voltage power supply. The technology improves the reliability and stability of the high-frequency high-voltage power supply.

Description

Technical Field

[0001] The utility model relates to the technical field of high-voltage power supplies, in particular to a high-frequency high-voltage power supply and power supply equipment based on silicon carbide. Background Art

[0002] Currently, high-frequency, high-voltage power supplies primarily consist of a DC circuit, a high-frequency inverter circuit, a high-frequency boost circuit, and a high-frequency, high-voltage full-bridge rectifier circuit. The DC circuit typically draws a 380V, 50 / 60Hz three-phase power supply and utilizes a three-phase, industrial-frequency, full-bridge rectifier. The low operating frequency results in minimal switching losses. The high-frequency inverter converts DC into high-frequency AC via a silicon semiconductor IGBT module. At high currents, the switching losses of silicon semiconductor IGBT modules are high, resulting in significant reverse recovery current. To limit switching losses and ensure reliable inverter operation, the operating frequency of the silicon semiconductor IGBT modules in high-frequency, high-voltage power inverters generally does not exceed 20kHz. The high switching losses of silicon semiconductor IGBT modules hinder efficiency improvements in high-voltage power supplies, and the limited operating frequency restricts miniaturization. The size of the high-frequency transformer in the high-frequency boost circuit is related to the inverter's operating frequency; the higher the frequency, the smaller the size. High-frequency, high-voltage full-bridge rectifier circuits use silicon diodes to rectify high-frequency AC high voltage into high-voltage DC. These circuits typically consist of hundreds to thousands of silicon diodes. Even at high frequencies, they exhibit significant reverse recovery current, resulting in high switching losses, which severely restrict the efficiency of high-frequency, high-voltage power supplies. Furthermore, the high-frequency transformer and high-frequency, high-voltage rectifier circuit are integrated within a single transformer tank. Excessive switching losses cause excessive temperature rise within the transformer tank, accelerating the aging of the high-frequency transformer, reducing the lifespan and reliability of the high-voltage power supply, and increasing maintenance cycles and costs.

[0003] Furthermore, high-frequency, high-voltage power supplies typically operate outdoors, where ambient temperatures fluctuate widely. Silicon semiconductor power devices are highly susceptible to temperature fluctuations. Their reverse recovery time, reverse recovery current, and junction capacitance increase with rising operating temperature. During high summer temperatures, losses further increase, reducing power efficiency and creating a vicious cycle that impacts the reliability and stability of high-voltage power supply systems.

[0004] Furthermore, in recent years, with the development of electric vehicles and the new energy industry, third-generation silicon carbide semiconductor technology has begun large-scale mass production and mass application. Silicon carbide MOSFETs, with their highly stable crystal structure and wide energy band, operate at frequencies far higher than silicon semiconductor IGBT modules. They also offer excellent high-temperature operating characteristics and low switching losses, making them ideal for use in high-frequency, high-voltage power supplies. However, the yield rate of high-current silicon carbide MOSFET modules remains low, and multiple low-current modules are typically connected in parallel to form a high-current module. Furthermore, in non-electric vehicles and new energy sectors, due to the lack of scalability, designing specific circuits based on the high-frequency, high-voltage power supply circuit requires the cost of selecting the appropriate silicon carbide MOSFET, which is still far higher than that of silicon semiconductor modules.

[0005] Overall, the current high-frequency and high-voltage power supplies have poor reliability and stability and high costs. Utility Model Content

[0006] The purpose of this utility model is to provide a high-frequency, high-voltage power supply and power supply equipment based on silicon carbide to alleviate the technical problems of poor reliability and stability and high cost of the current high-frequency, high-voltage power supply, improve the reliability and stability of the high-frequency, high-voltage power supply, and reduce its cost.

[0007] In the first aspect, an embodiment of the present invention provides a high-frequency and high-voltage power supply based on silicon carbide, comprising: a DC power supply, an H-bridge inverter, a resonant capacitor, an inductor, a transformer, a controller and a full-bridge high-voltage rectifier circuit; the H-bridge inverter is constructed based on a multiple of two three-phase bridge silicon carbide modules and a drive circuit; the DC power supply is connected to the multiple of two three-phase bridge silicon carbide modules; the multiple of two three-phase bridge silicon carbide modules are connected to the controller through the drive circuit; the three AC output ends of each group of three-phase bridge silicon carbide modules in the multiple of two three-phase bridge silicon carbide modules are connected in parallel, respectively leading to the first output end of the H-bridge inverter and the second output end of the H-bridge inverter; each group of three-phase bridge silicon carbide modules includes two three-phase bridge silicon carbide modules; the first output end of the H-bridge inverter is connected to the resonant capacitor, the inductor and the first input end of the transformer in sequence; the second output end of the H-bridge inverter is connected to the second input end of the transformer; the output end of the transformer is connected to the full The H-bridge inverter is connected to a high-voltage bridge rectifier circuit; the DC power supply is used to input DC power to the H-bridge inverter; the controller is used to generate a first drive signal and a second drive signal based on a preset inversion cycle, and input the first drive signal and the second drive signal to the H-bridge inverter; the high-level drive pulses in the first drive signal and the second drive signal have the same pulse width and a phase difference of 180 degrees; the H-bridge inverter is used to invert the DC power supply based on the first drive signal and the second drive signal, and output a first high-frequency alternating current through the first output terminal and the second output terminal of the H-bridge inverter; the first high-frequency alternating current generates series resonance through the resonant capacitor and the inductor to obtain the converted first high-frequency alternating current; the transformer is used to boost the converted first high-frequency alternating current according to preset transformation parameters to output a second high-frequency alternating current; the full-bridge high-voltage rectifier circuit is used to rectify the second high-frequency alternating current to output a DC high-voltage power supply.

[0008] In a preferred embodiment of the present invention, the H-bridge inverter comprises: a first three-phase silicon carbide bridge module, a second three-phase silicon carbide bridge module, and the drive circuit; the first three-phase silicon carbide bridge module and the second three-phase silicon carbide bridge module are each composed of six MOS transistors; the first three-phase silicon carbide bridge module and the second three-phase silicon carbide bridge module each include: an upper MOS transistor and a lower MOS transistor; the positive electrode of the DC power supply is connected to the drain of the upper MOS transistor; the negative electrode of the DC power supply is connected to the source of the lower MOS transistor; each of the upper MOS transistors or the lower MOS transistor corresponds to a target drive circuit in the drive circuit; the gate of the upper MOS transistor in the first three-phase silicon carbide bridge module corresponds to the first target drive circuit group in the drive circuit, the first control terminal of the first target drive circuit group is connected in parallel, and the first control terminal is connected to the first control pin of the controller; the gate of the lower MOS transistor in the first three-phase silicon carbide bridge module corresponds to the second target drive circuit in the drive circuit The first target drive circuit group is connected to the H-bridge inverter, and the second control terminal of the second target drive circuit group is connected in parallel, and the second control terminal is connected to the second control pin of the controller. The gate of the upper MOS transistor in the second three-phase bridge silicon carbide module corresponds to the third target drive circuit group in the drive circuit, and the third control terminal of the third target drive circuit group is connected in parallel, and the third control terminal is connected to the second control pin of the controller. The gate of the lower MOS transistor in the second three-phase bridge silicon carbide module corresponds to the fourth target drive circuit group in the drive circuit, and the fourth control terminal of the fourth target drive circuit group is connected in parallel, and the fourth control terminal is connected to the first control pin of the controller. The three midpoint AC output terminals of the first three-phase bridge silicon carbide module are connected in parallel to form the first output terminal of the H-bridge inverter. The three midpoint AC output terminals of the second three-phase bridge silicon carbide module are connected in parallel to form the second output terminal of the H-bridge inverter. The midpoint AC output terminal is used to indicate the intersection between the source of the upper MOS transistor and the drain of the lower MOS transistor.

[0009] In a preferred embodiment of the present invention, the high-frequency and high-voltage power supply further includes: a filter capacitor connected in parallel with the DC power supply.

[0010] In a preferred embodiment of the present invention, the full-bridge high-voltage rectifier circuit includes: a first silicon carbide diode, a second silicon carbide diode, a third silicon carbide diode and a fourth silicon carbide diode; the first output end of the transformer is connected to the cathode of the first silicon carbide diode and the anode of the third silicon carbide diode; the second output end of the transformer is connected to the cathode of the second silicon carbide diode and the anode of the fourth silicon carbide diode; the full-bridge high-voltage rectifier circuit is used to output the DC high-voltage power supply through the anode of the first silicon carbide diode and the anode of the second silicon carbide diode; the cathode of the third silicon carbide diode and the cathode of the fourth silicon carbide diode are grounded.

[0011] In a preferred embodiment of the present invention, the first silicon carbide diode, the second silicon carbide diode, the third silicon carbide diode, and the fourth silicon carbide diode each include a preset number of low-voltage diodes; and the low-voltage diodes are connected in series.

[0012] In a preferred embodiment of the present invention, one end of an electrical signal acquisition circuit is provided between the above-mentioned DC high-voltage power supply and the ground; the other end of the above-mentioned electrical signal acquisition circuit is connected to the above-mentioned controller; the above-mentioned electrical signal acquisition circuit is used to collect the sampled electrical signal between the above-mentioned DC high-voltage power supply and the ground based on a preset sampling period, and transmit the above-mentioned sampled electrical signal to the above-mentioned controller; the above-mentioned controller is used to adjust the above-mentioned first drive signal and the above-mentioned second drive signal according to the above-mentioned sampled electrical signal and the preset electrical signal setting value, so that the above-mentioned sampled electrical signal is equal to the above-mentioned electrical signal setting value.

[0013] In a preferred embodiment of the present invention, the electrical signal acquisition circuit includes: a voltage acquisition circuit and a current acquisition circuit; the above-mentioned voltage acquisition circuit is used to acquire the voltage sampling signal in the above-mentioned sampled electrical signal; the above-mentioned current acquisition circuit is used to acquire the current sampling signal in the above-mentioned sampled electrical signal.

[0014] In a preferred embodiment of the present invention, the DC power supply is a three-phase power supply.

[0015] In a second aspect, an embodiment of the present invention further provides a power supply device, including: the above-mentioned high-frequency and high-voltage power supply based on silicon carbide.

[0016] The embodiments of the present invention have the following beneficial technical effects:

[0017] The embodiment of the present utility model provides a high-frequency and high-voltage power supply and power supply equipment based on silicon carbide, including: a DC power supply, an H-bridge inverter, a resonant capacitor, an inductor, a transformer, a controller and a full-bridge high-voltage rectifier circuit; the above-mentioned H-bridge inverter is constructed based on a multiple of two three-phase bridge silicon carbide modules and a drive circuit; the above-mentioned DC power supply is connected to the above-mentioned three-phase bridge silicon carbide modules that are multiples of two; the above-mentioned three-phase bridge silicon carbide modules that are multiples of two are connected to the above-mentioned controller through the above-mentioned drive circuit; the three AC output ends of each group of three-phase bridge silicon carbide modules in the above-mentioned multiple of two three-phase bridge silicon carbide modules are respectively connected in parallel, and respectively lead to the first output end of the above-mentioned H-bridge inverter and the second output end of the above-mentioned H-bridge inverter; each group of three-phase bridge silicon carbide modules includes two three-phase bridge silicon carbide modules; the first output end of the above-mentioned H-bridge inverter is connected to the above-mentioned resonant capacitor, the above-mentioned inductor and the first input end of the above-mentioned transformer in sequence; the second output end of the above-mentioned H-bridge inverter is connected to the second input end of the above-mentioned transformer; the output end of the above-mentioned transformer is connected to the above-mentioned full-bridge high-voltage rectifier circuit. The H-bridge inverter is connected to a high-voltage full-bridge rectifier circuit; the DC power supply is used to input DC power to the H-bridge inverter; the controller is used to generate a first drive signal and a second drive signal based on a preset inversion cycle, and input the first drive signal and the second drive signal to the H-bridge inverter; the high-level drive pulses in the first drive signal and the second drive signal have the same pulse width and a phase difference of 180 degrees; the H-bridge inverter is used to invert the DC power supply based on the first drive signal and the second drive signal, and output a first high-frequency alternating current through the first output terminal and the second output terminal of the H-bridge inverter; the first high-frequency alternating current generates series resonance through the resonant capacitor and the inductor to obtain the converted first high-frequency alternating current; the transformer is used to boost the converted first high-frequency alternating current according to preset transformation parameters to output a second high-frequency alternating current; the full-bridge high-voltage rectifier circuit is used to rectify the second high-frequency alternating current to output a DC high-voltage power supply. This technology can alleviate the technical problems of poor reliability and stability and high cost of current high-frequency high-voltage power supplies, improve the reliability and stability of high-frequency high-voltage power supplies, and reduce their cost. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the specific implementation methods of the utility model or the technical solutions in the prior art, the drawings required for use in the specific implementation methods or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some implementation methods of the utility model. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0019] Figure 1 A schematic structural diagram of a high-frequency, high-voltage power supply based on silicon carbide provided in an embodiment of the present utility model;

[0020] Figure 2 A schematic structural diagram of another high-frequency, high-voltage power supply based on silicon carbide provided in an embodiment of the present utility model;

[0021] Figure 3 A schematic diagram of a first driving signal provided by an embodiment of the present utility model;

[0022] Figure 4 A schematic diagram of a second driving signal provided by an embodiment of the present utility model;

[0023] Figure 5 A schematic structural diagram of a power supply device provided in an embodiment of the utility model.

[0024] Icons: 11-DC power supply; 12-H-bridge inverter; 13-resonant capacitor; 14-inductor; 15-transformer; 16-controller; 17-full-bridge high-voltage rectifier circuit; 50-power supply equipment; 51-high-frequency and high-voltage power supply based on silicon carbide. DETAILED DESCRIPTION

[0025] To make the purpose, technical solutions, and advantages of the embodiments of the present invention more clear, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Generally, the components of the embodiments of the present invention described and shown in the drawings herein can be arranged and designed in various different configurations.

[0026] Currently, high-frequency and high-voltage power supplies have the problems of poor reliability and stability and high cost.

[0027] Based on this, the present invention provides a high-frequency, high-voltage power supply and power supply equipment based on silicon carbide. This technology can alleviate the technical problems of poor reliability, stability, and high cost of current high-frequency, high-voltage power supplies, improving their reliability and stability while reducing their cost. To facilitate understanding, the silicon carbide-based high-frequency, high-voltage power supply is first introduced in detail.

[0028] Example 1

[0029] In this embodiment, Figure 1 A schematic structural diagram of a high-frequency, high-voltage power supply based on silicon carbide provided in an embodiment of the present utility model.

[0030] Depend on Figure 1 As can be seen, the high-frequency and high-voltage power supply based on silicon carbide includes: a DC power supply 11, an H-bridge inverter 12, a resonant capacitor 13, an inductor 14, a transformer 15, a controller 16 and a full-bridge high-voltage rectifier circuit 17.

[0031] The H-bridge inverter 12 is constructed based on a multiple of two three-phase bridge silicon carbide modules and a drive circuit; the DC power supply 11 is connected to the multiple of two three-phase bridge silicon carbide modules; the multiple of two three-phase bridge silicon carbide modules are connected to the controller 16 through the drive circuit; the three AC output ends of each group of three-phase bridge silicon carbide modules in the multiple of two three-phase bridge silicon carbide modules are connected in parallel, and respectively lead to the first output end of the H-bridge inverter and the second output end of the H-bridge inverter; each group of three-phase bridge silicon carbide modules includes two three-phase bridge silicon carbide modules; the first output end of the H-bridge inverter is connected to the resonant capacitor 13, the inductor 14 and the first input end of the transformer 15 in sequence; the second output end of the H-bridge inverter 12 is connected to the second input end of the transformer 15; the output end of the transformer 15 is connected to the full-bridge high-voltage rectifier circuit 17; the DC power supply 11 is used to input the H-bridge inverter 12 A DC power supply; the controller 16 is configured to generate a first drive signal and a second drive signal based on a preset inversion cycle, and input the first drive signal and the second drive signal to the H-bridge inverter; the high-level drive pulses in the first drive signal and the second drive signal have the same pulse width and a phase difference of 180°; the H-bridge inverter 12 is configured to invert the DC power supply based on the first drive signal and the second drive signal, and output a first high-frequency alternating current through the first output terminal and the second output terminal of the H-bridge inverter; the first high-frequency alternating current generates series resonance through the resonant capacitor 13 and the inductor 14 to obtain the converted first high-frequency alternating current; the transformer 15 is configured to boost the converted first high-frequency alternating current according to preset transformation parameters to output a second high-frequency alternating current; the full-bridge high-voltage rectifier circuit 17 is configured to rectify the second high-frequency alternating current to output a DC high-voltage power supply.

[0032] In a preferred implementation of this embodiment, the H-bridge inverter 12 includes: a first three-phase silicon carbide bridge module, a second three-phase silicon carbide bridge module, and the drive circuit; the first three-phase silicon carbide bridge module and the second three-phase silicon carbide bridge module are each composed of six MOS transistors; the first three-phase silicon carbide bridge module and the second three-phase silicon carbide bridge module each include: an upper MOS transistor and a lower MOS transistor; the positive electrode of the DC power supply is connected to the drain of the upper MOS transistor; the negative electrode of the DC power supply is connected to the source of the lower MOS transistor; each of the upper MOS transistors or the lower MOS transistor corresponds to a target drive circuit in the drive circuit; the gate of the upper MOS transistor in the first three-phase silicon carbide bridge module corresponds to the first target drive circuit group in the drive circuit, the first control terminal of the first target drive circuit group is connected in parallel, and the first control terminal is connected to the first control pin of the controller; the gate of the lower MOS transistor in the first three-phase silicon carbide bridge module corresponds to the second target drive circuit in the drive circuit The first target drive circuit group is connected to the H-bridge inverter, and the second control terminal of the second target drive circuit group is connected in parallel, and the second control terminal is connected to the second control pin of the controller. The gate of the upper MOS transistor in the second three-phase bridge silicon carbide module corresponds to the third target drive circuit group in the drive circuit, and the third control terminal of the third target drive circuit group is connected in parallel, and the third control terminal is connected to the second control pin of the controller. The gate of the lower MOS transistor in the second three-phase bridge silicon carbide module corresponds to the fourth target drive circuit group in the drive circuit, and the fourth control terminal of the fourth target drive circuit group is connected in parallel, and the fourth control terminal is connected to the first control pin of the controller. The three midpoint AC output terminals of the first three-phase bridge silicon carbide module are connected in parallel to form the first output terminal of the H-bridge inverter. The three midpoint AC output terminals of the second three-phase bridge silicon carbide module are connected in parallel to form the second output terminal of the H-bridge inverter. The midpoint AC output terminal is used to indicate the intersection between the source of the upper MOS transistor and the drain of the lower MOS transistor.

[0033] In a preferred implementation of this embodiment, the high-frequency high-voltage power supply further includes: a filter capacitor connected in parallel with the DC power supply 11 .

[0034] In a preferred implementation of this embodiment, the full-bridge high-voltage rectifier circuit 17 includes: a first silicon carbide diode, a second silicon carbide diode, a third silicon carbide diode and a fourth silicon carbide diode; the first output end of the transformer 15 is connected to the cathode of the first silicon carbide diode and the anode of the third silicon carbide diode; the second output end of the transformer 15 is connected to the cathode of the second silicon carbide diode and the anode of the fourth silicon carbide diode; the full-bridge high-voltage rectifier circuit is used to output the DC high-voltage power supply through the anode of the first silicon carbide diode and the anode of the second silicon carbide diode; the cathode of the third silicon carbide diode and the cathode of the fourth silicon carbide diode are grounded.

[0035] Furthermore, the first silicon carbide diode, the second silicon carbide diode, the third silicon carbide diode, and the fourth silicon carbide diode each include a preset number of low-voltage diodes; and the low-voltage diodes are connected in series.

[0036] Furthermore, one end of the electrical signal acquisition circuit is connected between the above-mentioned DC high-voltage power supply and the ground; the other end of the above-mentioned electrical signal acquisition circuit is connected to the above-mentioned controller 16; the above-mentioned electrical signal acquisition circuit is used to collect the sampled electrical signal between the above-mentioned DC high-voltage power supply and the ground based on a preset sampling period, and transmit the above-mentioned sampled electrical signal to the above-mentioned controller; the above-mentioned controller 16 is used to adjust the above-mentioned first drive signal and the above-mentioned second drive signal according to the above-mentioned sampled electrical signal and the preset electrical signal setting value, so that the above-mentioned sampled electrical signal is equal to the above-mentioned electrical signal setting value.

[0037] Furthermore, the electrical signal acquisition circuit includes: a voltage acquisition circuit and a current acquisition circuit; the above-mentioned voltage acquisition circuit is used to acquire the voltage sampling signal in the above-mentioned sampled electrical signal; the above-mentioned current acquisition circuit is used to acquire the current sampling signal in the above-mentioned sampled electrical signal.

[0038] Furthermore, the above-mentioned DC power supply is a three-phase power supply.

[0039] For ease of understanding, Figure 2 A schematic structural diagram of another high-frequency, high-voltage power supply based on silicon carbide provided in an embodiment of the present utility model.

[0040] Depend on Figure 2As seen. A DC power supply DC1 is connected in parallel with the filter capacitor C1. The positive terminal of DC power supply DC1 is connected to P1, P2, and P3 of the three-phase bridge silicon carbide module M1, and to P1, P2, and P3 of M2. The negative terminal of DC power supply DC1 is connected to N1, N2, and N3 of the three-phase bridge silicon carbide module M1, and to N1, N2, and N3 of M2. The three-phase bridge silicon carbide module M1 and the three-phase bridge silicon carbide module M2 form an H-bridge inverter. The U, V, and W terminals of the three-phase SiC bridge module are directly short-circuited to form the A output of the H-bridge inverter. This output is connected to one end of resonant capacitor C2, the other end of which is connected to one end of inductor L1. The other end of inductor L1 is connected to one end of the primary winding of high-frequency transformer TR1. Inductor L1 can also be the leakage inductance of high-frequency transformer TR1. If this is the leakage inductance of high-frequency transformer TR1, the other end of resonant capacitor C2 is directly connected to one end of the primary winding of high-frequency transformer TR1. The U, V, and W terminals of the three-phase SiC bridge module M2 are directly short-circuited to form the B output of the H-bridge inverter. The A output of the inverter is connected to the other end of the primary winding of high-frequency transformer TR1. The H-bridge inverter composed of three-phase SiC bridge modules M1 and M2 is controlled by drive signals PWM_A and PWM_B from an embedded controller EC. The AC inverter cycle of the H-bridge inverter changes with changes in the drive signals PWM_A and PWM_B. The drive signals PWM_A and PWM_B must alternate, and the high-level drive cycles must not overlap. When the drive signal PWM_A is high, the first half-cycle of the AC inverter begins. At this time, M11, M12, M13, along with M22, M24, and M26, are turned on. Current flows from the positive terminal of the DC1 power supply, passes through M11, M12, and M13, and then flows through the resonant capacitor C2, inductor L1, and the primary winding of transformer TR1. It then flows out through the other end of the transformer TR1 primary winding and then through M22, M24, and M26 back to the negative terminal of the DC1 power supply. During this PWM_A cycle, if the current reverses after crossing zero, it returns to the DC1 power supply through the anti-parallel diodes of M11, M12, M13, M22, M24, and M26. When the drive signal PWM_B is high, the second half-cycle of the AC inverter begins. At this point, M21, M22, M23, and M12, M14, and M16 are conductive. Current flows from the positive electrode of the DC1 power supply, passes through M21, M22, and M23, and then flows through the primary coil of transformer TR1, inductor L1, and resonant capacitor C2. It then flows out through the other end of resonant capacitor C2 and returns to the negative electrode of the DC1 power supply through M12, M14, and M16. During the drive signal PWM_B cycle, if the current reverses after crossing zero, it returns to the power supply DC1 through the anti-parallel diodes of the three-phase bridge silicon carbide modules M21, M22, M23, M12, M14, and M16.The high-frequency AC current from the primary coil of transformer TR1 is coupled to the secondary coil of transformer TR1 through the transformer TR1 core, boosting the voltage in the secondary coil. After high-voltage full-bridge rectification, the output is a high-voltage DC current. One end of the secondary coil of high-frequency transformer TR1 is connected to the cathode of silicon carbide diode D1 and the anode of D3. The other end of the secondary coil of high-frequency transformer TR1 is connected to the cathode of silicon carbide diode D2 and the anode of D4. A full-bridge high-voltage rectifier circuit, consisting of silicon carbide diodes D1, D2, D3, and D4, rectifies the high-frequency AC current from the secondary coil of high-frequency transformer TR1, outputting a high-voltage DC current. The anode of silicon carbide diode D1 is connected to the anode of D3, then connected to the DC high-voltage output connection point HV1 through a high-voltage porcelain bottle. The cathode of silicon carbide diode D2 is connected to the cathode of D4, then connected in series with current sampling terminal I2, and finally connected to ground connection point GND. Current sampling I2 and voltage sampling U2 are connected to analog channels AD1 and AD2 of the embedded controller EC via an analog isolation acquisition circuit. When the high-voltage power supply is operating, the embedded controller EC collects the values of analog channels AD1 and AD2 at a fixed sampling period (the sampling period is less than the variation period of the drive signals PWM_A and PWM_B). This determines the current variation of the high-voltage power supply's output voltage U2 and current I2, compares them with the controller's internal set values for voltage U2 and current I2, and adjusts the controller's output drive signals PWM_A and PWM_B based on the comparison results to ensure that the output voltage U2 and current I2 values remain consistent with the control target set values U2 and current I2.

[0041] Furthermore, the full-bridge high-voltage rectifier circuit 17, composed of silicon carbide diodes D1, D2, D3, and D4, consists of a large number of low-voltage diodes connected in series in each bridge arm D1, D2, D3, and D4. The reverse withstand voltage of a single silicon carbide diode connected in series should be greater than 1.5 times the rated DC output peak voltage. Assuming that the rated DC output average voltage of the high-frequency high-voltage power supply is 100kV and the peak voltage is approximately 1.4 times the rated DC output voltage, or 140kV, the reverse withstand voltage of a single silicon carbide diode is 1200V. Designed with a margin of 210kV of 1.5 times the peak voltage, each bridge arm D1, D2, D3, and D4 requires 175 silicon carbide diodes connected in series, for a total of 700 diodes in the full-bridge high-voltage rectifier circuit.

[0042] Furthermore, the three-phase bridge SiC module drive signals PWM_A and PWM_B of the controller EC are connected to the three-phase bridge SiC module drive circuit DR1. Drive signal PWM_A simultaneously controls the six sub-circuits 1G1, 1G3, 1G5, 2G2, 2G4, and 2G6 of drive circuit DR1, while drive signal PWM_B simultaneously controls the other six sub-circuits 1G2, 1G4, 1G6, 2G1, 2G3, and 2G5 of drive circuit DR1. DR1's subcircuits 1G1, 1G3, 1G5, 1G2, 1G4, and 1G6 control the gates of three-phase SiC bridge modules M11, M12, M13, M14, M15, and M16, respectively. DR1's subcircuits 2G1, 2G3, 2G5, 2G2, 2G4, and 2G6 control the gates of three-phase SiC bridge modules M21, M22, M23, M24, M25, and M26, respectively. Drive signal PWM_A, through drive circuit DR1, controls the gates M11, M13, and M15 of the top half of three-phase SiC bridge module M1 and the gates M22, M24, and M26 of the bottom half of three-phase SiC bridge module M2. The drive signal PWM_B controls the gates M22, M24 and M26 of the lower half bridge of the three-phase bridge silicon carbide module M1 and the gates M21, M23 and M25 of the upper half bridge of the three-phase bridge silicon carbide module M2 through the drive circuit DR1.

[0043] Furthermore, the controller EC completes the control transformation of the three-phase bridge silicon carbide modules M1 and M2 through the drive signals PWM_A and PWM_B, so that the original U, V, and W three-phase outputs are transformed into H-bridge inverter A and B outputs, so that the three-phase bridge silicon carbide module meets the control requirements of high-frequency and high-voltage power supply.

[0044] The waveforms of the three-phase silicon carbide bridge module drive signals PWM_A and PWM_B in the embedded controller (EC) are shown. The module drive signals PWM_A and PWM_B have identical pulse widths (T1) and intervals (T2), but are 180 degrees out of phase. The low level of PWM_A and PWM_B is 0V, and the high level is between 3.3V and 15V, with a typical value of 15V. Drive signal PWM_A simultaneously controls the six sub-circuits 1G1, 1G3, 1G5, 2G2, 2G4, and 2G6 of drive circuit DR1. Drive signal PWM_B simultaneously controls the other six sub-circuits 1G2, 1G4, 1G6, 2G1, 2G3, and 2G5 of drive circuit DR1. The pulse widths (T1) and intervals (T2) of drive circuits 1G1, 1G3, 1G5, 2G2, 2G4, and 2G6 are identical to those of drive circuits 1G2, 1G4, 1G6, 2G1, 2G3, and 2G5, but are 180 degrees out of phase. The low level of the driving circuits 1G1, 1G3, 1G5, 2G2, 2G4, 2G6 and the driving circuits 1G2, 1G4, 1G6, 2G1, 2G3, 2G5 is between 0V and -8V, with a typical value of -4V; the high level is between 8V and 20V, with a typical value of 15V.

[0045] Furthermore, the controller EC controls the high-frequency high-voltage power supply in a fixed pulse width manner. The T1 time remains unchanged at different frequencies. The T1 time is related to the resonant capacitor C2 and the inductor L1. The controller EC changes the output voltage U2 and current I2 of the power supply by adjusting the interval period T2.

[0046] The PWM_A is the first driving signal, and the PWM_B is the second driving signal.

[0047] For ease of understanding, Figure 3 A schematic diagram of a first driving signal provided by an embodiment of the present utility model; Figure 4 A schematic diagram of a second driving signal provided by an embodiment of the present utility model.

[0048] The embodiment of the present utility model provides a high-frequency and high-voltage power supply and power supply equipment based on silicon carbide, including: a DC power supply, an H-bridge inverter, a resonant capacitor, an inductor, a transformer, a controller and a full-bridge high-voltage rectifier circuit; the above-mentioned H-bridge inverter is constructed based on a multiple of two three-phase bridge silicon carbide modules and a drive circuit; the above-mentioned DC power supply is connected to the above-mentioned three-phase bridge silicon carbide modules that are multiples of two; the above-mentioned three-phase bridge silicon carbide modules that are multiples of two are connected to the above-mentioned controller through the above-mentioned drive circuit; the three AC output ends of each group of three-phase bridge silicon carbide modules in the above-mentioned multiple of two three-phase bridge silicon carbide modules are respectively connected in parallel, and respectively lead to the first output end of the above-mentioned H-bridge inverter and the second output end of the above-mentioned H-bridge inverter; each group of three-phase bridge silicon carbide modules includes two three-phase bridge silicon carbide modules; the first output end of the above-mentioned H-bridge inverter is connected to the above-mentioned resonant capacitor, the above-mentioned inductor and the first input end of the above-mentioned transformer in sequence; the second output end of the above-mentioned H-bridge inverter is connected to the second input end of the above-mentioned transformer; the output end of the above-mentioned transformer is connected to the above-mentioned full-bridge high-voltage rectifier circuit. The H-bridge inverter is connected to a high-voltage full-bridge rectifier circuit; the DC power supply is used to input DC power to the H-bridge inverter; the controller is used to generate a first drive signal and a second drive signal based on a preset inversion cycle, and input the first drive signal and the second drive signal to the H-bridge inverter; the high-level drive pulses in the first drive signal and the second drive signal have the same pulse width and a phase difference of 180 degrees; the H-bridge inverter is used to invert the DC power supply based on the first drive signal and the second drive signal, and output a first high-frequency alternating current through the first output terminal and the second output terminal of the H-bridge inverter; the first high-frequency alternating current generates series resonance through the resonant capacitor and the inductor to obtain the converted first high-frequency alternating current; the transformer is used to boost the converted first high-frequency alternating current according to preset transformation parameters to output a second high-frequency alternating current; the full-bridge high-voltage rectifier circuit is used to rectify the second high-frequency alternating current to output a DC high-voltage power supply. This technology can alleviate the technical problems of poor reliability and stability and high cost of current high-frequency high-voltage power supplies, improve the reliability and stability of high-frequency high-voltage power supplies, and reduce their cost.

[0049] Example 2

[0050] Based on the above embodiments, Figure 5 A schematic structural diagram of a power supply device provided in an embodiment of the utility model.

[0051] Depend on Figure 5 As can be seen, the power supply device 50 includes: the high-frequency and high-voltage power supply 51 based on silicon carbide in the above embodiment.

[0052] The power supply device provided in this embodiment has the same technical features as the high-frequency, high-voltage power supply based on silicon carbide provided in the first embodiment above, and therefore solves the same technical problems and achieves the same technical effects. Those skilled in the art will clearly understand that for ease and brevity of description, the specific operating process of the light-emitting figurine described above can refer to the corresponding structure of the high-frequency, high-voltage power supply based on silicon carbide in the first embodiment above, and will not be repeated here.

[0053] In the description of this utility model, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer" and the like, indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings, or are the orientations or positional relationships in which the utility model product is typically placed when in use. These terms are intended solely to facilitate the description of this utility model and to simplify the description, and are not intended to indicate or imply that the device or component referred to must have a specific orientation, be constructed, or operate in a specific orientation. Therefore, they should not be construed as limitations on this utility model. Furthermore, the terms "first," "second," and "third," etc., are used solely to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0054] In the description of the present invention, it should also be noted that, unless otherwise clearly specified and limited, the terms "setting", "installation", "connection", and "connection" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be internal communication between two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances. Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, not to limit it; although the present invention has been described in detail with reference to the above embodiments, ordinary technicians in this field should understand that they can still modify the technical solutions recorded in the above embodiments, or make equivalent replacements for some or all of the technical features therein; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A high-frequency, high-voltage power supply based on silicon carbide, characterized in that: include: A DC power supply, an H-bridge inverter, a resonant capacitor, an inductor, a transformer, a controller, and a full-bridge high-voltage rectifier circuit; the H-bridge inverter is constructed based on a multiple of two three-phase bridge silicon carbide modules and a drive circuit; the DC power supply is connected to the multiple of two three-phase bridge silicon carbide modules; the multiple of two three-phase bridge silicon carbide modules are connected to the controller through the drive circuit; the three AC output ends of each group of three-phase bridge silicon carbide modules in the multiple of two three-phase bridge silicon carbide modules are connected in parallel, respectively leading to the first output end of the H-bridge inverter and the second output end of the H-bridge inverter; each group of three-phase bridge silicon carbide modules includes two three-phase bridge silicon carbide modules; the first output end of the H-bridge inverter is connected to the resonant capacitor, the inductor, and the first input end of the transformer in sequence; the second output end of the H-bridge inverter is connected to the second input end of the transformer; the output end of the transformer is connected to the full-bridge high-voltage rectifier circuit; The DC power supply is used to input DC power to the H-bridge inverter; The controller is configured to generate a first drive signal and a second drive signal based on a preset inversion cycle, and input the first drive signal and the second drive signal to the H-bridge inverter; The high-level driving pulses in the first driving signal and the second driving signal have the same pulse width and a phase difference of 180°; The H-bridge inverter is configured to perform an inversion operation on the DC power supply based on the first drive signal and the second drive signal, and output a first high-frequency AC power through a first output terminal and a second output terminal of the H-bridge inverter; The first high-frequency alternating current generates series resonance through the resonant capacitor and the inductor to obtain the converted first high-frequency alternating current; The transformer is used to boost the converted first high-frequency alternating current according to preset transformation parameters to output a second high-frequency alternating current; The full-bridge high-voltage rectifier circuit is used to rectify the second high-frequency alternating current and output a direct current high-voltage power supply.

2. The high-frequency and high-voltage power supply based on silicon carbide according to claim 1, characterized in that: The H-bridge inverter comprises: a first three-phase bridge silicon carbide module, a second three-phase bridge silicon carbide module and the drive circuit; the first three-phase bridge silicon carbide module and the second three-phase bridge silicon carbide module are each composed of six MOS tubes; the first three-phase bridge silicon carbide module and the second three-phase bridge silicon carbide module each include: an upper MOS tube and a lower MOS tube; The positive electrode of the DC power supply is connected to the drain of the upper MOS tube; the negative electrode of the DC power supply is connected to the source of the lower MOS tube; each of the upper MOS tubes or lower MOS tubes corresponds to a target drive circuit in the drive circuit; the gate of the upper MOS tube in the first three-phase bridge silicon carbide module corresponds to the first target drive circuit group in the drive circuit, the first control end of the first target drive circuit group is connected in parallel, and the first control end is connected to the first control pin of the controller; the gate of the lower MOS tube in the first three-phase bridge silicon carbide module corresponds to the second target drive circuit group in the drive circuit, the second control end of the second target drive circuit group is connected in parallel, and the second control end is connected to the second control pin of the controller; the gate of the upper MOS tube in the second three-phase bridge silicon carbide module corresponds to the second target drive circuit group in the drive circuit, The third target drive circuit group in the drive circuit corresponding to the gate of the lower MOS tube in the second three-phase bridge silicon carbide module, the third control end of the third target drive circuit group is connected in parallel, and the third control end is connected to the second control pin of the controller; the fourth target drive circuit group in the drive circuit corresponding to the gate of the lower MOS tube in the second three-phase bridge silicon carbide module, the fourth control end of the fourth target drive circuit group is connected in parallel, and the fourth control end is connected to the first control pin of the controller; the three midpoint AC output ends of the first three-phase bridge silicon carbide module are connected in parallel to form the first output end of the H-bridge inverter; the three midpoint AC output ends of the second three-phase bridge silicon carbide module are connected in parallel to form the second output end of the H-bridge inverter; the midpoint AC output end is used to indicate the intersection between the source of the upper MOS tube and the drain of the lower MOS tube.

3. The high-frequency and high-voltage power supply based on silicon carbide according to claim 1, characterized in that: The high-frequency high-voltage power supply further includes: a filter capacitor connected in parallel with the DC power supply.

4. The high-frequency and high-voltage power supply based on silicon carbide according to claim 1, characterized in that: The full-bridge high-voltage rectifier circuit includes: a first silicon carbide diode, a second silicon carbide diode, a third silicon carbide diode and a fourth silicon carbide diode; The first output end of the transformer is connected to the cathode of the first silicon carbide diode and the anode of the third silicon carbide diode; the second output end of the transformer is connected to the cathode of the second silicon carbide diode and the anode of the fourth silicon carbide diode; The full-bridge high-voltage rectifier circuit is used to output the DC high-voltage power supply through the anode of the first silicon carbide diode and the anode of the second silicon carbide diode; The cathode of the third silicon carbide diode and the cathode of the fourth silicon carbide diode are grounded.

5. The high-frequency and high-voltage power supply based on silicon carbide according to claim 4, characterized in that: The first silicon carbide diode, the second silicon carbide diode, the third silicon carbide diode, and the fourth silicon carbide diode each include a preset number of low-voltage diodes; the low-voltage diodes are connected in series.

6. The high-frequency and high-voltage power supply based on silicon carbide according to claim 1, characterized in that: One end of the electric signal acquisition circuit is connected between the DC high voltage power supply and the ground; the other end of the electric signal acquisition circuit is connected to the controller; The electrical signal acquisition circuit is used to collect a sampled electrical signal between the DC high-voltage power supply and the ground line based on a preset sampling period, and transmit the sampled electrical signal to the controller; The controller is configured to adjust the first driving signal and the second driving signal according to the sampled electrical signal and a preset electrical signal setting value, so that the sampled electrical signal is equal to the electrical signal setting value.

7. The high-frequency and high-voltage power supply based on silicon carbide according to claim 6, characterized in that: The electrical signal acquisition circuit includes: a voltage acquisition circuit and a current acquisition circuit; The voltage acquisition circuit is used to acquire the voltage sampling signal in the sampled electrical signal; the current acquisition circuit is used to acquire the current sampling signal in the sampled electrical signal.

8. The high-frequency and high-voltage power supply based on silicon carbide according to claim 1, characterized in that: The DC power supply is a three-phase power supply.

9. A power supply device, characterized in that: include: A high-frequency, high-voltage power supply based on silicon carbide as claimed in any one of claims 1 to 8.

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