High-power LED chip for extreme application

Abstract

The utility model provides a high-power LED chip for extreme application, and relates to the field of high-power GaN-based LED chips. The electrode is arranged on the electroplated metal substrate; the conductive material is arranged on the electroplated metal substrate and is connected with the electrode; the multi-quantum well light-emitting layer MQW is arranged on the electroplated metal substrate and is connected with the conductive material; and the SiO2 passivation protection layer is arranged on the electroplated metal substrate and annularly arranged on the outer surfaces of the electrode, the conductive material and the MQW. The utility model provides a high-power LED (light-emitting diode) chip for extreme application, which solves the technical problems of current homogenization, chip heat dissipation, chip working stability and the like during large-current working.

Description

Technical Field

[0001] The utility model relates to the field of high-power GaN-based LED chips, and in particular to a high-power LED chip for extreme applications. Background Art

[0002] Light Emitting Diodes (LEDs) are semiconductor light-emitting devices made based on the principle of PN junction electroluminescence. They have the advantages of high electro-optical conversion efficiency, energy saving, environmental protection, long life, and small size. They have now become widely used lighting source components. White light LEDs are made of GaN-based blue light LED chips + phosphor packaging.

[0003] At present, high-power LED chips generally adopt a vertical structure, with device electrodes distributed vertically up and down, and current injected perpendicular to the chip. For vertical structure chips with output power of 3W and 5W, this largely solves a series of problems such as the planar distribution of electrodes and lateral current injection of GaN-based LED chips with face-up and flip-chip structures, such as heat dissipation, uneven current distribution, and reliability. The front electrodes of such chips are usually made into straight or curved lines. At the end points of the lines, there are only a few circular electrodes for ultrasonic welding of gold wires. For high-current, high-power density high-power LED chips, this original front electrode structure will have an adverse effect on the normal operation of the chip.

[0004] During the operation of high-power, large-size, and high-power density chips, the distribution of the front electrodes has a great impact on the chip's current uniformity, chip heat dissipation, and chip operation stability. Utility Model Content

[0005] The utility model provides a high-power LED chip for extreme applications, which solves the technical problems of insufficient current uniformity, chip heat dissipation, and chip working stability when working at high currents.

[0006] In order to solve the above technical problems, the technical solutions of the present utility model are as follows:

[0007] The embodiment of the present invention provides a high-power LED chip for extreme applications, including:

[0008] Electroplating metal substrates;

[0009] an electrode, disposed on the electroplated metal substrate;

[0010] a conductive material, disposed on the electroplated metal substrate and connected to the electrodes;

[0011] A multi-quantum well light-emitting layer MQW is provided on the electroplated metal substrate and connected to the conductive material;

[0012] The SiO2 passivation protection layer is arranged on the electroplated metal substrate and is arranged around the outer surfaces of the electrode, the conductive material and the multi-quantum well light-emitting layer MQW.

[0013] Furthermore, the electrode includes a P electrode located on the upper layer of the electroplated metal substrate. When in use, the P electrode provides a forward current.

[0014] Furthermore, the conductive material includes a p-type gallium nitride layer p-GaN, which is located on the P electrode and connected to the P electrode.

[0015] Furthermore, the conductive material further includes an n-type gallium nitride layer n-GaN, which is located on the upper layer of the multi-quantum well light-emitting layer MQW and is connected to the multi-quantum well light-emitting layer MQW.

[0016] Furthermore, the electrode also includes a negative n-electrode, which is located on the upper layer of the n-type gallium nitride layer n-GaN and connected to the n-type gallium nitride layer n-GaN. When in use, the negative n-electrode outputs a negative current.

[0017] Furthermore, when in use, a forward voltage is applied to the P electrode and the negative n electrode, and the electrons and holes in the multi-quantum well light-emitting layer MQW recombine to emit a spectrum of designed wavelengths.

[0018] Furthermore, the negative n-electrodes are all four long strip electrodes, and a number of gold wires are provided on the long strip electrodes. When in use, the heat on the chip is conducted to the bracket through the gold wires.

[0019] Furthermore, the total length of the four long strip electrodes is not less than 50% of the circumference of the front side of the chip, and the long strip electrodes have various shapes. When in use, the long strip electrodes evenly inject current into the chip from all sides.

[0020] Furthermore, the electroplated metal substrate is a square chip with a side length of 37 mil, and the diameter of the light output hole of the electroplated metal substrate is 0.67 mm.

[0021] The above solution of the utility model includes at least the following beneficial effects:

[0022] The high-power LED chip for ultimate application described in the present invention has the N-electrode on the front of the chip made around the chip, and is designed into various shapes such as closed or open strips, ovals, circles, polygons, etc. When the chip is packaged, one end of several gold wires can be welded to these N-type electrodes around the chip through ultrasonic welding technology, and the other end can be welded to the bracket. The negative electrode N-type electrodes are distributed around the chip, and their total length is more than 50% of the chip circumference, so that the current inside the chip is uniform. At the same time, part of the heat of the chip can be conducted out through the N-type electrodes and gold wires around it, thereby improving the reliability and stability of the chip's operation; by increasing the substrate area, the chip can better dissipate heat, thereby improving the current resistance. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 This is a schematic diagram of the structure of the high-power LED chip for extreme application of the present utility model;

[0024] Figure 2 This is a front view schematic diagram of the high-power LED chip for ultimate application of the present invention;

[0025] Figure 3 This is another front view schematic diagram of the high-power LED chip for ultimate application of the present invention;

[0026] Description of reference numerals:

[0027] 1. Electroplated metal substrate; 2. P-electrode; 3. P-type gallium nitride layer p-GaN; 4. Multi-quantum well light-emitting layer MQW; 5. N-type gallium nitride layer n-GaN; 6. Cathode n-electrode; 7. SiO2 passivation layer. DETAILED DESCRIPTION

[0028] The following describes exemplary embodiments of the present invention in more detail with reference to the accompanying drawings. Although exemplary embodiments of the present invention are shown in the accompanying drawings, it should be understood that the present invention can be implemented in various forms and should not be limited by the embodiments described herein. Rather, these embodiments are provided to enable a more thorough understanding of the present invention and to fully convey the scope of the present invention to those skilled in the art.

[0029] like Figure 1 As shown, the embodiment of the present invention provides a high-power LED chip for extreme applications, including:

[0030] Electroplating metal substrate 1;

[0031] Electrodes, arranged on the electroplated metal substrate 1;

[0032] Conductive material, disposed on the electroplated metal substrate 1 and connected to the electrodes;

[0033] A multi-quantum well light-emitting layer MQW4 is provided on the electroplated metal substrate 1 and connected to the conductive material;

[0034] The SiO2 passivation protection layer is provided on the electroplated metal substrate 1 and is arranged around the outer surfaces of the electrodes, the conductive material, and the multi-quantum well light-emitting layer MQW4.

[0035] In an embodiment of the present invention, the electroplated metal substrate 1 is used to provide good electrical conductivity and thermal conductivity, providing a stable support foundation for subsequent layers; ensuring the electrical performance and thermal management of the entire device, and improving the efficiency and reliability of the device; the electrodes serve as the input and output ends of the current, connected to an external power supply, and effectively introduce current into the multi-quantum well light-emitting layer MQW4, thereby realizing light emission; the conductive material is connected to the electrode to ensure that the current can flow smoothly to the multi-quantum well light-emitting layer MQW4, so as to reduce resistance, improve the uniformity and distribution of the current, and help enhance the light output power of the device; the multi-quantum well light-emitting layer MQW4 generates light through a quantum well structure. When current is applied, electrons and holes recombine in the quantum well and release photons, thereby realizing light emission; the SiO2 passivation protective layer provides protection for the device to prevent oxidation and environmental influences, and can also play the role of electrical insulation, improve the stability and life of the device, and reduce the interference of external factors on the luminescence performance, thereby improving the overall reliability and performance.

[0036] like Figures 1 to 3 As shown, the electrode includes a P electrode 2, which is located on the upper layer of the electroplated metal substrate 1. When in use, the P electrode 2 provides a forward current.

[0037] In an embodiment of the present invention, the P electrode 2 is located on the upper layer of the electroplated metal substrate 1 and is used to provide a forward current; the setting of the P electrode can effectively enhance the current transmission efficiency, so that the current can pass through the electroplated metal substrate more smoothly, thereby improving the overall electrical performance; in electrochemical applications, the forward current provided by the P electrode can promote the occurrence of electrochemical reactions, increase the reaction rate, and thus enhance the response speed and performance stability of the device; placing the P electrode on the upper layer of the electroplated metal substrate helps to optimize the physical and chemical properties of the electrode, making it more suitable for specific application requirements, such as reducing the resistance of the electrode, reducing energy loss, etc.

[0038] like Figures 1 to 3 As shown, the conductive material includes a p-type gallium nitride layer p-GaN3, which is located on the P electrode 2 and connected to the P electrode 2.

[0039] In the embodiment of the present invention, the p-type gallium nitride layer provides a large number of holes, which can combine with electrons in the n-type material to form current. Through the connection with the P electrode 2, the p-GaN can effectively inject holes into the active area, thereby promoting the normal operation of the device; the good connection between the p-GaN layer and the P electrode can reduce the interface resistance and enhance the current injection efficiency; in the light-emitting diode LED or the laser diode LD, the presence of the p-type gallium nitride layer can promote the generation and emission of light, and the injection of holes and the recombination of electrons will lead to the emission of photons, thereby improving the photoelectric conversion efficiency; the p-GaN layer has good thermal conductivity, which can help dissipate heat, reduce the temperature of the device during operation, extend its service life and improve reliability; by optimizing the thickness and doping concentration of the p-GaN layer, the current density and luminous efficiency of the device can be further adjusted, thereby improving the overall performance.

[0040] like Figures 1 to 3 As shown, the conductive material further includes an n-type gallium nitride layer n-GaN5, which is located on the multi-quantum well light-emitting layer MQW4 and is connected to the multi-quantum well light-emitting layer MQW4.

[0041] In the embodiment of the present invention, the n-type gallium nitride layer n-GaN is located on the multi-quantum well light-emitting layer MQW and is connected to the MQW. The n-GaN layer provides abundant free electrons, which can be effectively injected into the multi-quantum well light-emitting layer. The electrons recombine with the holes in the MQW to form excitons, thereby generating photons and achieving a luminous effect. The presence of the n-GaN layer helps to improve the injection efficiency of electrons, ensuring that more electrons can reach the MQW and recombine with holes, thereby improving the luminous efficiency of the device. The good connection between n-GaN and MQW can reduce the interface resistance and improve the migration efficiency of electrons between layers. The low resistance characteristic helps to reduce Energy loss: n-GaN has good thermal conductivity, which helps dissipate heat, reduce the temperature of the device during operation, improve the stability and reliability of the device, and extend its service life, preventing performance degradation or failure due to overheating. The n-GaN layer can optimize the band structure of the MQW by adjusting the doping concentration and thickness, affecting its optical and electrical properties, improving the distribution of electrons and holes, and increasing the carrier recombination efficiency, thereby enhancing the luminescence characteristics. By rationally designing the parameters of the n-GaN layer, light-emitting diodes (LEDs) and laser diodes (LDs) can maintain good performance under high-power conditions, avoiding failure due to overload.

[0042] like Figures 1 to 3 As shown, the electrode further includes a negative n-electrode 6, which is located on the upper layer of the n-type gallium nitride layer n-GaN5 and is connected to the n-type gallium nitride layer n-GaN5. When in use, the negative n-electrode 6 outputs a negative current.

[0043] In the embodiment of the present invention, the negative n-electrode n-electrode, 6 is located on the n-type gallium nitride layer n-GaN, 5 and is connected to the n-GaN layer; the main function of the n-electrode is to serve as the negative electrode of the device and output a negative current; by being connected to the n-GaN layer, the n-electrode can effectively collect and transmit electrons provided by the n-GaN layer, which is essential for the normal operation of devices such as light-emitting diodes (LEDs) and lasers; the n-electrode provides electrons to the multi-quantum well light-emitting layer MQW through the n-GaN layer. When the device is powered on, the n-electrode injects electrons into the n-GaN layer. The electrons will flow downward and enter the MQW layer, recombine with holes, generate photons, and realize the light-emitting function; the good connection between the n-electrode and the n-GaN layer can reduce the interface resistance, and the electrons will flow from the n-electrode to the n-GaN layer. Energy loss is smaller during the process, which increases the efficiency of carrier flow and improves the overall performance of the device. The n-electrode is usually made of a good conductive material and can effectively help dissipate heat. During operation, the n-electrode can effectively conduct the generated heat away, reducing the operating temperature of the device, thereby improving the stability and service life of the device. By optimizing the design of the n-electrode, such as material selection, thickness and shape, its performance under high current and high power conditions can be improved, ensuring that the device can still operate reliably under extreme conditions. Due to the structural design of the n-electrode, it can support fast current switching and response, which is very important for high-frequency applications, ensuring that the device can still maintain good electrical performance under high-frequency conditions.

[0044] like Figures 1 to 3 As shown, when in use, a forward voltage is applied to the P electrode 2 and the negative n electrode 6, and the electrons and holes in the multi-quantum well light-emitting layer MQW4 recombine to emit a spectrum of designed wavelength.

[0045] In an embodiment of the present invention, when a forward voltage is applied between the P electrode 2 and the negative n electrode 6, the electrons and holes in the multi-quantum well light-emitting layer MQW, 4 recombine to emit a spectrum of designed wavelength; after applying the forward voltage, the P electrode injects holes through the p-type gallium nitride layer p-GaN, and the n electrode injects electrons through the n-type gallium nitride layer n-GaN, and the carrier electrons and holes will be injected into the multi-quantum well light-emitting layer; in the MQW, electrons and holes recombine in the quantum well to form excitons; when electrons and holes recombine, energy is released in the form of photons to generate light. By adjusting the composition of the material and the design of the quantum well, light emission of different wavelengths can be achieved, thereby meeting the needs of specific applications such as blue light LEDs, green light LEDs, etc.; multi-quantum well junctions The structure allows carriers to recombine in different quantum wells, thereby increasing the probability of carrier recombination, which can significantly improve the luminous efficiency and enable the device to achieve higher light output even at lower input power; due to the presence of quantum wells, the emitted spectrum has a specific wavelength and width, which enables light-emitting diodes (LEDs) and laser diodes (LDs) to operate at specific wavelengths and are suitable for various optoelectronic applications such as display, lighting, and communication; when a forward voltage is applied, the device can operate stably under high power conditions, and due to the design of multiple quantum wells, the device can maintain high stability and reliability during long-term operation, reducing light decay.

[0046] like Figures 1 to 3 As shown, the negative n-electrodes 6 are all four long strip electrodes, and a number of gold wires are provided on the long strip electrodes. When in use, the heat on the chip is conducted to the bracket through the gold wires.

[0047] In the embodiment of the present invention, the design of the long strip electrodes enables them to effectively serve as heat conduction channels. When in use, the light-emitting diodes (LEDs) or laser diodes (LDs) will generate heat during operation, and this heat will be conducted outward through the electrodes; the presence of gold wires further enhances the efficiency of heat conduction. Gold wires are a good thermal conductive material. Through them, the heat generated by the chip can be quickly conducted to the bracket to avoid local overheating. Effective thermal management helps to keep the operating temperature of the chip within a safe range; by conducting heat from the chip to the bracket, the heat dissipation performance of the entire device can be significantly improved. A good heat dissipation design can prevent the performance degradation or failure of the device due to overheating, thereby improving the stability and reliability of the device; due to effective thermal management, the device operates at normal operating temperature, reducing thermal fatigue and material aging, thereby extending the service life of the device. This is especially important for high-power and high-frequency applications. Since temperature has a significant impact on luminous efficiency and spectral characteristics, good thermal management can ensure the stability of the device's light output during operation. The long electrode design provides a larger contact area, which helps to achieve better electrical connection and heat conduction. It can be adjusted and optimized according to different application requirements to enhance design flexibility. Under high-power operating conditions, heat accumulation may affect the performance of the device. By quickly conducting heat to the bracket, the problem of heat accumulation can be effectively addressed, ensuring the stable operation of the device under high-power conditions.

[0048] like Figures 1 to 3 As shown, the total length of the four long strip electrodes is not less than 50% of the circumference of the front side of the chip, and the long strip electrodes have various shapes. When in use, the long strip electrodes evenly inject current into the chip from all sides of the chip.

[0049] In an embodiment of the present invention, the n-electrode on the front of the chip is made around the chip and is designed into various shapes such as closed or open strips, ovals, circles, polygons, etc., and one end of a number of gold wires is welded to these n-type electrodes around the chip through ultrasonic welding technology, and the other end is welded to the bracket. The negative electrode n-type electrodes are distributed around the chip, and their total length is more than 50% of the circumference of the chip. In this way, the current inside the chip can be uniformed, and at the same time, part of the heat of the chip can be conducted out through the n-type electrodes and gold wires around it.

[0050] like Figures 1 to 3 As shown, the electroplated metal substrate 1 is a square chip with a side length of 37 mil, and the diameter of the light output hole of the electroplated metal substrate 1 is 0.67 mm.

[0051] In an embodiment of the present invention, the electroplated metal substrate 1 is a square chip with a side length of 37 mil and a light output hole diameter of 0.67 mm; by increasing the substrate part of the chip, the chip can withstand a higher current. The 37 mil * 37 mil chip in this embodiment can use a current of up to 2.5 A, compared with the 22.5 mil * 22.5 mil chip that can only withstand a maximum of 1.5 A, which significantly improves the current carrying capacity; the larger substrate area helps to dissipate heat more effectively, reduce the temperature of the LED chip when working at high power, reduce performance degradation caused by overheating, and improve the stability and service life of the chip; the diameter of the light output hole is as small as 0.67 mm, but by enlarging the substrate design, the overall structure of the chip can better manage power input and heat dissipation, so that it can still maintain good working performance under high current conditions; when the chip operates under high current conditions, it can provide more stable light output and reduce light intensity fluctuations caused by current changes. Due to better heat dissipation performance and high current resistance, the chip life under long-term high-load working conditions is extended.

[0052] In the embodiment of the present invention, the chip size is 37mil*37mil, the thickness is 7.1mil, the P pad is 6.5mil, and the photoelectric characteristics of the chip at 22°C are shown in the following table.

[0053]

[0054] Remark:

[0055] The chip is an electrostatically sensitive device, so ESD protection is recommended during chip handling. The wavelength span is 2.5nm, and the main wavelength maintains a tolerance of 1.0nm. All measurements are completed using Sanan Optoelectronics detection equipment. A 10% tolerance is allowed for radiant flux measurements.

[0056] The 37mil chip in this embodiment abandons the existing design concept of chip manufacturers. The existing design concept is to maximize the light-emitting surface of the chip surface. The design concept of the 37mil chip is the opposite. The chip area is 37*37MIl, but the light-emitting surface is only 0.35 square millimeters. By increasing the area of the chip base, the chip's heat dissipation capacity is improved. On the other hand, the electrodes in this embodiment are made into long strips or squares so that multiple gold wires can be drilled around the chip to facilitate the rapid diffusion of chip current from the periphery to the center of the chip. At the same time, multiple gold wires also help conduct heat from the chip surface to the aluminum nitride ceramic substrate at the bottom of the chip, thereby increasing the chip's heat dissipation capacity. The following table compares the data of the 37mil chip and the 24mil chip on the market after packaging:

[0057]

[0058] Conclusion: Through multiple actual tests, it is found that enlarging the chip base, expanding the electrodes, and packaging with multiple gold wires have an impact on the extreme use of large currents in the chip, and can increase the heat dissipation capacity of the chip.

[0059] The above is a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principles described in the present invention. These improvements and modifications should also be regarded as the scope of protection of the present invention.

Claims

1. A high-power LED chip for extreme applications, characterized by: include: Electroplated metal substrate (1); An electrode, arranged on the electroplated metal substrate (1); Conductive material, disposed on the electroplated metal substrate (1) and connected to the electrode; A multi-quantum well light-emitting layer MQW (4) is provided on the electroplated metal substrate (1) and is connected to the conductive material; A SiO2 passivation protective layer is provided on the electroplated metal substrate (1) and is arranged around the outer surfaces of the electrode, the conductive material, and the multi-quantum well light-emitting layer MQW (4).

2. The high-power LED chip for extreme applications according to claim 1, characterized in that: The electrode comprises a P electrode (2) located on the upper layer of the electroplated metal substrate (1); when in use, the P electrode (2) provides a forward current.

3. The high-power LED chip for extreme applications according to claim 2, characterized in that: The conductive material includes a p-type gallium nitride layer p-GaN (3), which is located on the upper layer of the P electrode (2) and is connected to the P electrode (2).

4. The high-power LED chip for extreme applications according to claim 3, characterized in that: The conductive material further comprises an n-type gallium nitride layer n-GaN (5), which is located on the upper layer of the multi-quantum well light-emitting layer MQW (4) and is connected to the multi-quantum well light-emitting layer MQW (4).

5. The high-power LED chip for extreme applications according to claim 4, characterized in that: The electrode further comprises a negative n-electrode (6), which is located on the upper layer of the n-type gallium nitride layer n-GaN (5) and is connected to the n-type gallium nitride layer n-GaN (5). When in use, the negative n-electrode (6) outputs a negative current.

6. The high-power LED chip for extreme applications according to claim 5, characterized in that: When in use, a forward voltage is applied to the P electrode (2) and the negative n electrode (6), and the electrons and holes in the multi-quantum well light-emitting layer MQW (4) recombine to emit a spectrum of the designed wavelength.

7. The high-power LED chip for extreme applications according to claim 6, characterized in that: The negative n-electrodes (6) are all four long strip electrodes, and a number of gold wires are provided on the long strip electrodes. When in use, the heat on the chip is conducted to the bracket through the gold wires.

8. The high-power LED chip for extreme applications according to claim 7, characterized in that: The total length of the four long strip electrodes is not less than 50% of the circumference of the front side of the chip, and the long strip electrodes have various shapes. When in use, the long strip electrodes evenly inject current into the chip from all sides.

9. The high-power LED chip for extreme applications according to claim 8, characterized in that: The electroplated metal substrate (1) is a square chip with a side length of 37 mils, and the diameter of the light exit hole of the electroplated metal substrate (1) is 0.67 mm.

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