High-capacity high-efficiency monocrystalline silicon wafer

Abstract

The utility model discloses a high-capacity high-efficiency monocrystalline silicon wafer, which comprises a monocrystalline silicon wafer substrate, an antireflection film, a first transparent adhesive layer, a second transparent adhesive layer and a light-transmitting protective plate, the antireflection film is arranged on the top surface of the monocrystalline silicon wafer substrate, the first transparent adhesive layer is arranged on the top surface of the antireflection film, and the second transparent adhesive layer is arranged on the top surface of the antireflection film. The light-transmitting protection plate is arranged on the top face of the first transparent adhesive layer, the second transparent adhesive layer is arranged on the bottom face of the monocrystalline silicon wafer base body, and micropores penetrating through the monocrystalline silicon wafer base body and the antireflection film are formed between the first transparent adhesive layer and the second transparent adhesive layer in an array mode. And transparent adhesive columns for connecting the first transparent adhesive layer and the second transparent adhesive layer are arranged in the micropores. According to the high-capacity high-efficiency monocrystalline silicon wafer, the capacity is increased, the light receiving rate can be improved, and the structural strength and the anti-seismic property are improved.

Description

Technical Field

[0001] The utility model relates to the field of single crystal silicon wafers, in particular to a large-capacity and high-efficiency single crystal silicon wafer. Background Art

[0002] Monocrystalline silicon wafers are a type of semiconductor material widely used in the manufacture of semiconductor devices, solar cells, and other fields. To increase the capacity of monocrystalline silicon wafers, the commonly used methods are to increase their size and thin them. Increasing the size of monocrystalline silicon wafers and reducing their thickness can reduce the cost per unit capacity.

[0003] The thickness of monocrystalline silicon wafers typically ranges from 200 to 1000 microns. Thinned monocrystalline silicon wafers can be as thin as 150 microns, reducing unit costs but increasing structural fragility. Furthermore, increasing the size of monocrystalline silicon wafers further exacerbates their structural fragility, resulting in poor reliability during assembly and use, necessitating improvements. Utility Model Content

[0004] The purpose of the utility model is to provide a large-capacity and high-efficiency single-crystal silicon wafer, to increase capacity and ensure structural stability.

[0005] To achieve this purpose, the present invention adopts the following technical solutions:

[0006] A large-capacity, high-efficiency single-crystal silicon wafer comprises: a single-crystal silicon wafer substrate, an anti-reflection film, a first transparent adhesive layer, a second transparent adhesive layer, and a light-transmitting protective plate, wherein the anti-reflection film is arranged on the top surface of the single-crystal silicon wafer substrate, the first transparent adhesive layer is arranged on the top surface of the anti-reflection film, the light-transmitting protective plate is arranged on the top surface of the first transparent adhesive layer, and the second transparent adhesive layer is arranged on the bottom surface of the single-crystal silicon wafer substrate. An array of microholes penetrating the single-crystal silicon wafer substrate and the anti-reflection film is arranged between the first transparent adhesive layer and the second transparent adhesive layer, and transparent adhesive columns connecting the first transparent adhesive layer and the second transparent adhesive layer are arranged in the microholes.

[0007] Wherein, the thickness of the single crystal silicon wafer substrate is 150 to 170 microns.

[0008] Wherein, the anti-reflection film is a porous silicon dioxide anti-reflection film.

[0009] Wherein, the light-transmitting protective plate is made of ultra-white tempered glass.

[0010] Wherein, the second transparent adhesive layer is provided with a glass fiber mesh.

[0011] Wherein, the first transparent adhesive layer, the second transparent adhesive layer and the transparent adhesive column are made of UV adhesive.

[0012] Wherein, the diameter of the micropores is 1 to 2 mm.

[0013] The beneficial effects of the present invention are: a large-capacity and high-efficiency single-crystal silicon wafer, the single-crystal silicon wafer substrate can increase in size and reduce in thickness, thereby increasing capacity, and utilizing an anti-reflection film to reduce light reflection, effectively improving the light receiving rate of the single-crystal silicon wafer substrate, protecting the upper part of the single-crystal silicon wafer substrate through a transparent protective plate, protecting the lower part of the single-crystal silicon wafer substrate after the second transparent adhesive layer is cured, and utilizing transparent glue to connect the first transparent adhesive layer and the second transparent adhesive layer, thereby realizing sandwich-type protection of the single-crystal silicon wafer substrate, improving structural strength and seismic resistance, and reducing the problem of single-crystal silicon wafer substrate fragmentation. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 It is a structural diagram of the utility model;

[0015] Figure 2 yes Figure 1 A partial enlarged view of part A. DETAILED DESCRIPTION

[0016] The following combination Figures 1 to 2 The technical solution of the present utility model is further illustrated by specific embodiments.

[0017] like Figure 1 The large-capacity, high-efficiency single-crystal silicon wafer shown includes: a single-crystal silicon wafer substrate 4, an anti-reflection film 3, a first transparent adhesive layer 2, a second transparent adhesive layer 6 and a light-transmitting protective plate 1. The thickness of the single-crystal silicon wafer substrate is 150 to 170 microns, which is ultra-thin. The capacity can be increased by increasing the size, thereby reducing the cost per unit capacity.

[0018] The anti-reflection film 3 is arranged on the top surface of the single-crystal silicon wafer substrate 4. In this embodiment, the anti-reflection film 3 is a porous silica anti-reflection film. The light irradiated to the surface of the single-crystal silicon wafer substrate 4 cannot be fully absorbed, and a large part of it is reflected. In order to minimize the reflection loss, one or more layers of anti-reflection film 3 can be plated on the single-crystal silicon wafer substrate 4 to improve the conversion efficiency.

[0019] The first transparent adhesive layer 2 is disposed on top of the anti-reflection film 3, and the light-transmitting protective plate 1 is disposed on top of the first transparent adhesive layer 2, with the light-transmitting protective plate 1 being fixed thereto by the first transparent adhesive layer 2. In this embodiment, the light-transmitting protective plate 1 is made of an ultra-clear tempered glass plate, which has a high surface hardness and provides good protection for the single-crystal silicon wafer substrate 4. Furthermore, the ultra-clear tempered glass plate has a high light transmittance, ensuring that light passes through the light-transmitting protective plate 1 and reaches the single-crystal silicon wafer substrate 4.

[0020] The second transparent adhesive layer 6 is disposed on the bottom surface of the single-crystal silicon wafer substrate 4. After curing, the second transparent adhesive layer 6 provides protection underneath the single-crystal silicon wafer substrate 4. In this embodiment, a fiberglass mesh 5 is provided within the second transparent adhesive layer 6 to enhance the structural strength of the second transparent adhesive layer 6, providing high tensile strength and preventing cracking after curing.

[0021] An array of microholes 7 penetrating the single crystal silicon wafer substrate 4 and the anti-reflection film 3 is provided between the first transparent adhesive layer 2 and the second transparent adhesive layer 6. The diameter of the microholes 7 is 1 to 2 mm, which is small and does not affect the working stability of the single crystal silicon wafer substrate 4.

[0022] Transparent adhesive columns 8 are provided within the micropores 7, connecting the first transparent adhesive layer 2 and the second transparent adhesive layer 6. Transparent adhesive 8 connects the first and second transparent adhesive layers 2 and 6, providing sandwich-style protection for the single-crystal silicon wafer substrate 4 and further enhancing structural reliability. In this embodiment, UV adhesive is used to bond the first and second transparent adhesive layers 2 and 6 to the transparent adhesive columns. UV adhesive rapidly cures under ultraviolet light, facilitating production. The high hardness of UV adhesive after curing ensures overall bending resistance.

[0023] The above contents are only preferred embodiments of the present invention. For ordinary technicians in this field, according to the concept of the present invention, there may be changes in the specific implementation methods and application scope. The content of this specification should not be understood as limiting the present invention.

Claims

1. A large-capacity, high-efficiency single-crystal silicon wafer, characterized in that: include: A single crystal silicon wafer substrate, an anti-reflection film, a first transparent adhesive layer, a second transparent adhesive layer and a light-transmitting protective plate, wherein the anti-reflection film is arranged on the top surface of the single crystal silicon wafer substrate, the first transparent adhesive layer is arranged on the top surface of the anti-reflection film, the light-transmitting protective plate is arranged on the top surface of the first transparent adhesive layer, and the second transparent adhesive layer is arranged on the bottom surface of the single crystal silicon wafer substrate. An array of microholes penetrating the single crystal silicon wafer substrate and the anti-reflection film is arranged between the first transparent adhesive layer and the second transparent adhesive layer, and transparent adhesive columns connecting the first transparent adhesive layer and the second transparent adhesive layer are arranged in the microholes.

2. The high-capacity and high-efficiency single crystal silicon wafer according to claim 1, characterized in that: The thickness of the single crystal silicon wafer substrate is 150 to 170 microns.

3. The high-capacity and high-efficiency single crystal silicon wafer according to claim 1, characterized in that: The anti-reflection film is a porous silicon dioxide anti-reflection film.

4. The high-capacity and high-efficiency single crystal silicon wafer according to claim 1, characterized in that: The light-transmitting protective plate is made of ultra-white tempered glass.

5. The high-capacity and high-efficiency single crystal silicon wafer according to claim 1, characterized in that: The second transparent adhesive layer is provided with a glass fiber mesh.

6. The high-capacity and high-efficiency single crystal silicon wafer according to claim 1, characterized in that: The first transparent adhesive layer, the second transparent adhesive layer and the transparent adhesive column are made of UV adhesive.

7. The high-capacity and high-efficiency single crystal silicon wafer according to claim 1, characterized in that: The diameter of the micropores is 1 to 2 mm.

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