Low-height, multi-group and high-power optical MOS (Metal Oxide Semiconductor) solid-state relay

Abstract

The utility model provides a low-height, multi-group and high-power optical MOS solid-state relay, which comprises an aluminum nitride ceramic tube shell, an output pin and an input pin are respectively arranged in the aluminum nitride ceramic tube shell, and an MOS tube chip, a copper-based aluminum panel and a photovoltaic chip are respectively arranged in the aluminum nitride ceramic tube shell and above the output pin and the input pin. The surface of the copper-based aluminum panel is connected with a second bonding pad, and the aluminum nitride ceramic tube shell is internally provided with a first bonding pad. According to the low-height, multi-group and high-power optical MOS solid-state relay provided by the utility model, the ceramic tube shell is designed to be an aluminum nitride ceramic tube shell, the thermal conductivity of the ceramic tube shell is 5-8 times that of a conventional aluminum oxide ceramic tube shell, the design requirement of a load circuit 5A of the low-height, multi-group and high-power solid-state relay can be met, and the low-height, multi-group and high-power optical MOS solid-state relay is high in reliability and strong in severe environment resistance; meanwhile, the fixed relay adopts LCC16 leadless packaging, and is suitable for the design of a high-density integrated surface-mounted printed circuit board.

Description

Technical Field

[0001] The utility model relates to the technical field of relay manufacturing, in particular to a low-height, multi-group, high-power optical MOS solid-state relay. Background Art

[0002] PhotoMOS solid-state relays are contactless switching devices with optoelectronic isolation and power field-effect transistor outputs. They are widely used in defense research, industrial control, and automated management, and are suitable for high-reliability applications such as ignition of explosive devices, isolation drives, and inductor coils. With the rapid development of high-tech equipment in my country, the requirements for high-tech relay packaging are becoming increasingly stringent, and the demand for solid-state relays with small size, low height, multiple groups, and high loads is increasing rapidly.

[0003] Existing photoMOS solid-state relays are mostly single-group or dual-group, and the ceramic shell material used is alumina. Alumina ceramic has the characteristics of high strength, hardness, high temperature resistance, impact resistance, and corrosion resistance. The thermal conductivity coefficient is generally 20W / mK. This type of ceramic shell is suitable for low-power relays. Due to its limited heat dissipation capacity and small load current, it cannot meet the requirements of low height, multiple groups, and high power.

[0004] Therefore, it is necessary to provide a low-profile, multi-group, high-power optical MOS solid-state relay to solve the above technical problems. Utility Model Content

[0005] The utility model provides a low-profile, multi-group, high-power optical MOS solid-state relay, which solves the problem that ceramic tube shells are suitable for low-power relays but cannot meet the requirements of low profile, multi-group, and high power due to limited heat dissipation capacity and small load current.

[0006] To solve the above technical problems, the present invention provides a low-profile, multi-group, high-power optical MOS solid-state relay, comprising:

[0007] An aluminum nitride ceramic tube shell, wherein an output pin and an input pin are respectively provided inside the aluminum nitride ceramic tube shell, a MOS tube chip, a copper-based aluminum panel, and a photovoltaic chip are respectively provided inside the aluminum nitride ceramic tube shell and above the output pin and the input pin, a second soldering pad is connected to the surface of the copper-based aluminum panel, and a first soldering pad is provided inside the aluminum nitride ceramic tube shell;

[0008] A plurality of first ceramic mounting platforms and a plurality of first ceramic mounting platforms, wherein the plurality of first ceramic mounting platforms and the plurality of first ceramic mounting platforms are respectively mounted on the left and right sides of the inner wall of the aluminum nitride ceramic tube shell, and a third solder pad, a fourth solder pad and a fifth solder pad are respectively provided inside the aluminum nitride ceramic tube shell;

[0009] A ceramic circuit board is arranged inside the aluminum nitride ceramic tube shell, and a seventh solder pad, an eighth solder pad and an infrared light-emitting diode chip are respectively arranged on the surface of the ceramic circuit board.

[0010] Preferably, the output pins include a first group of positive output pins, a first group of negative output pins, a second group of positive output pins, a second group of negative output pins, a third group of positive output pins, a third group of negative output pins, a fourth group of positive output pins and a fourth group of negative output pins.

[0011] Preferably, the input pins include a first group of positive input pins, a first group of negative input pins, a second group of positive input pins, a second group of negative input pins, a third group of positive input pins, a third group of negative input pins, a fourth group of positive input pins and a fourth group of negative input pins.

[0012] Preferably, a plurality of silicon-aluminum bonding wires and gold bonding wires are respectively connected between the MOS tube chip, the copper-based aluminum panel and the photovoltaic chip.

[0013] Preferably, an annular metal welding layer is provided on the top of the aluminum nitride ceramic tube shell.

[0014] Preferably, a metal cover plate is provided on the top of the annular metal welding layer.

[0015] Preferably, a disassembly assembly is provided on the top of the aluminum nitride ceramic tube shell, and the disassembly assembly includes two threaded rods, a disassembly frame is provided between the two threaded rods, a threaded through hole adapted to the threaded rod is opened inside the disassembly frame, and a threaded sleeve is threadedly connected to the surface of the threaded rod and located at the top of the disassembly frame.

[0016] Compared with related technologies, the low-profile, multi-group, high-power optical MOS solid-state relay provided by the present invention has the following beneficial effects:

[0017] The utility model provides a low-profile, multi-group, high-power optical MOS solid-state relay. By designing the ceramic tube shell as an aluminum nitride ceramic tube shell, its thermal conductivity is 5 to 8 times that of a conventional alumina ceramic tube shell. It can meet the design requirements of a low-profile, multi-group, high-power solid-state relay with a load circuit of 5A, and has high reliability and strong resistance to harsh environments. At the same time, the fixed relay adopts an LCC16 leadless package, which is suitable for the design of high-density integrated surface mount printed circuit boards.

[0018] A solder pad heat sink is designed on the bottom surface of the ceramic tube shell, which is electrically interconnected with the output terminal through a metal connecting column and a tungsten column. The internal MOS tube chip adopts a vacuum sintering process, which further improves the current carrying capacity and heat dissipation capacity of the LCC16 packaged optical MOS solid state relay.

[0019] The hybrid microcircuit assembly process is used to achieve full chip assembly, compact structure, high reliability, and the ceramic shell and metal cover are sealed by parallel sealing welding, with excellent sealing performance;

[0020] It is a small-sized, multi-group, low-profile, high-power optical MOS solid-state relay with a rated output current of 5A. Compared with optical MOS solid-state relays of the same size and height, its output current capacity is doubled, which can meet the urgent demand for small-sized, low-profile, multi-group, high-power optical MOS solid-state relays in the field of high-tech equipment. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 This is a structural diagram of a first embodiment of a low-profile, multi-group, high-power optical MOS solid-state relay provided by the utility model;

[0022] Figure 2 This is a schematic diagram of the internal structure of the utility model;

[0023] Figure 3 This is a schematic diagram of the internal structure after removing the ceramic circuit board;

[0024] Figure 4 Schematic diagram of the pad distribution inside the aluminum nitride ceramic shell;

[0025] Figure 5 Schematic diagram of the pad distribution at the bottom of the tube shell;

[0026] Figure 6 It is a structural diagram of the lower end surface of the ceramic circuit board;

[0027] Figure 7 This is a schematic diagram of the pad distribution on the lower end surface of the ceramic circuit board;

[0028] Figure 8 This is a practical circuit diagram;

[0029] Figure 9 This is the wiring method of the relay DC output circuit of this practical application;

[0030] Figure 10 A schematic structural diagram of a second embodiment of a low-profile, multi-group, high-power optical MOS solid-state relay provided by the present invention;

[0031] Figure 11 for Figure 10 An enlarged schematic diagram of part A is shown.

[0032] Numbers in the figure: 1, aluminum nitride ceramic tube shell; 2, metal cover; 3, annular metal welding layer; 4, output pin; 41, first group of output pin positive electrode; 42, first group of output pin negative electrode; 43, second group of output pin positive electrode; 44, second group of output pin negative electrode; 45, third group of output pin positive electrode; 46, third group of output pin negative electrode; 47, fourth group of output pin positive electrode; 48, fourth group of output pin negative electrode; 5, input pin; 51, first group of input pin positive electrode; 52, first group of input pin negative electrode; 53, second group of input pin positive electrode; 54, second group of input pin negative electrode; 55, The third group of input pins (positive); 56, the third group of input pins (negative); 57, the fourth group of input pins (positive); 58, the fourth group of input pins (negative); 6, the first solder pad; 7, the second solder pad; 8, the third solder pad; 9, the fourth solder pad; 10, the ceramic mounting base; 11, the fifth solder pad; 12, the ceramic mounting base; 13, the sixth solder pad; 14, the MOS tube chip; 15, the copper-based aluminum panel; 16, the silicon-aluminum bonding wire; 17, the gold bonding wire; 18, the photovoltaic chip; 19, the ceramic circuit board; 20, the seventh solder pad; 21, the eighth solder pad; 22, the infrared light-emitting diode chip;

[0033] 23. Disassembly assembly; 231. Threaded rod; 232. Disassembly frame; 233. Threaded through hole; 234. Threaded sleeve. DETAILED DESCRIPTION

[0034] The present invention will be further described below with reference to the accompanying drawings and implementation examples.

[0035] First embodiment

[0036] Please refer to Figure 1 、 Figure 2 、 Figure 3 、 Figure 4 、 Figure 5 、 Figure 6 、 Figure 7 、 Figure 8 and Figure 9 ,in, Figure 1 This is a structural diagram of a first embodiment of a low-profile, multi-group, high-power optical MOS solid-state relay provided by the utility model; Figure 2 This is a schematic diagram of the internal structure of the utility model; Figure 3 This is a schematic diagram of the internal structure after removing the ceramic circuit board; Figure 4 Schematic diagram of the pad distribution inside the aluminum nitride ceramic shell; Figure 5 Schematic diagram of the pad distribution at the bottom of the tube shell; Figure 6 It is a structural diagram of the lower end surface of the ceramic circuit board; Figure 7 This is a schematic diagram of the pad distribution on the lower end surface of the ceramic circuit board; Figure 8 This is a practical circuit diagram;

[0037] Figure 9 This is the wiring method of the practical relay DC output circuit. A low-profile, multi-group, high-power optical MOS solid-state relay, including:

[0038] An aluminum nitride ceramic tube shell 1, wherein an output pin 4 and an input pin 5 are respectively provided inside the aluminum nitride ceramic tube shell 1, and a MOS tube chip 14, a copper-based aluminum panel 15, and a photovoltaic chip 18 are respectively provided inside the aluminum nitride ceramic tube shell 1 and above the output pin 4 and the input pin 5. A second soldering pad 7 is connected to the surface of the copper-based aluminum panel 15. A first soldering pad 6 is provided inside the aluminum nitride ceramic tube shell 1;

[0039] A plurality of first ceramic mounting platforms 10 and a plurality of first ceramic mounting platforms 12 are respectively mounted on the left and right sides of the inner wall of the aluminum nitride ceramic tube shell 1, and a third solder pad 8, a fourth solder pad 9 and a fifth solder pad 11 are respectively provided inside the aluminum nitride ceramic tube shell 1;

[0040] The ceramic circuit board 19 is arranged inside the aluminum nitride ceramic tube shell 1 , and a seventh solder pad 20 , an eighth solder pad 21 and an infrared light emitting diode chip 22 are respectively provided on the surface of the ceramic circuit board 19 .

[0041] The output pins 4 include a first group of output pin positive electrodes 41 , a first group of output pin negative electrodes 42 , a second group of output pin positive electrodes 43 , a second group of output pin negative electrodes 44 , a third group of output pin positive electrodes 45 , a third group of output pin negative electrodes 46 , a fourth group of output pin positive electrodes 47 and a fourth group of output pin negative electrodes 48 .

[0042] The input pins include a first group of input pin positive electrodes 51, a first group of input pin negative electrodes 52, a second group of input pin positive electrodes 53, a second group of input pin negative electrodes 54, a third group of input pin positive electrodes 55, a third group of input pin negative electrodes 56, a fourth group of input pin positive electrodes 57 and a fourth group of input pin negative electrodes 58.

[0043] A plurality of silicon-aluminum bonding wires 16 and gold bonding wires 17 are respectively connected between the MOS tube chip 14 , the copper-based aluminum panel 15 and the photovoltaic chip 18 .

[0044] An annular metal welding layer 3 is provided on the top of the aluminum nitride ceramic tube shell 1 .

[0045] A metal cover plate 2 is provided on the top of the annular metal welding layer 3 .

[0046] The solid-state relay adopts the standard LCC16 leadless, ceramic-sealed package with a maximum external dimension of 20.5mm (length) × 7.6mm (width) × 3.2mm (height) and four sets of normally open outputs. The solid-state relay includes an aluminum nitride ceramic tube shell 1 and a metal cover plate 2 sealed at the port of the aluminum nitride ceramic tube shell 1. The metal cover plate 2 is made of 4J42 alloy. The upper port of the aluminum nitride ceramic tube shell 1 has an annular metal welding layer 3 made of 4J42 alloy and the surface of the annular metal welding layer 3 is gold-plated. The metal cover plate 2 is sealed to the port of the aluminum nitride ceramic tube shell 1 by parallel seam welding. The thickness of the annular metal welding layer 3 is 0.3mm, thereby ensuring the fusion welding sealing quality of the final product. The aluminum nitride ceramic tube shell 1 has good mechanical strength, and is superior to alumina ceramic in thermal conductivity, expansion coefficient, wear resistance and metal sealing performance. Its thermal conductivity is 5 to 8 times that of conventional alumina ceramic tube shells, which can meet the design requirements of low-profile, multi-group, high-power solid-state relays with a load current of 5A.

[0047] The input pin 5 and the output pin 4 are of printed circuit board type.

[0048] The pads of the four groups of output pins 4 and the four groups of input pins 5 are all metalized tungsten pads, and the surfaces of the pads are all gold-plated, which is easy to weld and thus ensures the welding strength, and can also improve the surface's anti-oxidation and anti-corrosion properties.

[0049] The first pad 6, the second pad 7, the third pad 8, the fourth pad 9, the fifth pad 11, the sixth pad 13, the seventh pad 20 and the eighth pad 21 are all metalized tungsten pads, and the surfaces of the pads are gold-plated, which facilitates chip welding and gold wire bonding, ensuring the welding strength of each chip and the bonding strength of the gold wire, and each pad is isolated from each other and not connected to each other.

[0050] The seventh soldering pad 20 and the eighth soldering pad 21 located at both ends of the lower end surface of the ceramic circuit board 19 are bonded to the two fifth soldering pads 11 on the concave surfaces at both ends of the ceramic mounting platform 12 using conductive silver glue. At the same time, the infrared light-emitting diode chip 22 is located directly above the photovoltaic chip 18, and the distance between the infrared light-emitting diode chip 22 and the photovoltaic chip 18 is 1.0 mm, so that the infrared light-emitting diode chip 22 and the photovoltaic chip 18 are photoelectrically isolated, and the photoelectric conversion efficiency is optimal; at the same time, the ceramic mounting platform 10 is electrically connected to the first group of input pin positive electrodes 51, and the ceramic mounting platform 12 is electrically connected to the first group of input pin negative electrodes 52, so that the first group of input pin positive electrodes 51 and the first group of input pin negative electrodes 52 are electrically connected to the infrared light-emitting diode chip 22. The remaining three groups of the ceramic tube shell have the same structure as the first group.

[0051] The inner cavity sidewall of the aluminum nitride ceramic tube shell 1 on the side of the input pin 5 has four groups of two symmetrical ceramic mounting platforms 12 with the same spacing and four groups of photovoltaic chips 18. The photovoltaic chips 18 are fixed side by side between the four groups of two ceramic mounting platforms 14 with the same spacing via fifth pads 11. Specifically, the photovoltaic chips 18 are bonded to the fifth pads 11 using conductive silver glue, and the photovoltaic chips 18 are electrically connected to the MOS tube chip 14 via the third pad 8, the fifth pad 11, and the gold bonding wire 17. A ceramic circuit board 19 is fixed to the ceramic mounting platform 14. The lower end surface of the ceramic circuit board 19 is fixed to an infrared light-emitting diode chip 22 via an eighth pad 21. The cathode of the infrared light-emitting diode chip 22 is bonded to the eighth pad 21 using conductive silver glue, and the anode of the infrared light-emitting diode chip 22 is electrically connected to the seventh pad 20 using a gold bonding wire 17. The optical MOS tube chip 14 and the photovoltaic chip 18 constitute the output part of the relay, and the infrared light-emitting diode chip 22 constitutes the input part of the relay.

[0052] See Figure 8 , the practical circuit principle is as follows:

[0053] This type of optical MOS solid-state relay uses infrared light-emitting diode chips V1, V2, V3, V4; photovoltaic chips D1, D2, D3, D4 as isolation coupling devices, and MOS tube chips V5, V6, V7, V8 as output devices. When the input current reaches the action value of the solid-state relay, the infrared light-emitting diode chips V1, V2, V3, V4 of the input circuit emit light, and the light is incident on the photosensitive device photovoltaic chips D1, D2, D3, D4 of the output circuit. The photosensitive device generates a certain voltage. When the photosensitive device photovoltaic chips D1, D2, D3, D 4 reaches the turn-on voltage threshold of the MOS tube chips V5, V6, V7, and V8, and the MOS tube chips V5, V6, V7, and V8 are turned on to realize the relay connection function; when the input end loses power, the voltage generated by the photosensitive device photovoltaic chips D1, D2, D3, and D4 is less than the turn-on voltage threshold of the MOS tube chips V5, V6, V7, and V8, and the MOS tube chips V5, V6, V7, and V8 are turned off to realize the relay shutdown function, and the gate voltage of the MOS tube chips V5, V6, V7, and V8 is quickly discharged through the discharge circuit inside the photovoltaic chip.

[0054] This practical optical MOS solid-state relay adopts the standard LCC16 leadless, ceramic sealed package, and is sealed after being filled with nitrogen. Its maximum external dimensions are 20.5mm (length) × 7.6mm (width) × 3.2mm (height), and it has four groups of normally open DC outputs with an output load of 80Vd.c. and 5A. The specific wiring method of the DC output circuit is as follows: Figure 9As shown in the figure, input pins 1 and 2 are the first group of IN+ and IN- terminals of the relay, input pins 3 and 4 are the second group of IN+ and IN- terminals of the relay, input pins 5 and 6 are the third group of IN+ and IN- terminals of the relay, input pins 7 and 8 are the fourth group of IN+ and IN- terminals of the relay, output pins 16 and 15 are the OUT+ and OUT- terminals of the first group of the relay, output pins 14 and 13 are the OUT+ and OUT- terminals of the second group of the relay, output pins 12 and 11 are the OUT+ and OUT- terminals of the third group of the relay, and output pins 10 and 9 are the OUT+ and OUT- terminals of the fourth group of the relay, which can meet the current carrying capacity greater than 5A.

[0055] It adopts hybrid microcircuit assembly technology, and all components are assembled with bare chips, which has high reliability, small size, light weight, good airtightness of assembly method, and adopts vertical illumination structure inside, which has compact structure, excellent sealing, large output current and high reliability.

[0056] Compared with related technologies, the low-profile, multi-group, high-power optical MOS solid-state relay provided by the present invention has the following beneficial effects:

[0057] The utility model provides a low-profile, multi-group, high-power optical MOS solid-state relay. By designing the ceramic tube shell to be an aluminum nitride ceramic tube shell 1, the thermal conductivity of the aluminum nitride ceramic tube shell is 5 to 8 times that of a conventional alumina ceramic tube shell. The utility model can meet the design requirements of a low-profile, multi-group, high-power solid-state relay with a load circuit of 5A, and has high reliability and strong resistance to harsh environments. At the same time, the fixed relay adopts an LCC16 leadless package, which is suitable for the design of high-density integrated surface-mount printed circuit boards.

[0058] A solder pad heat sink is designed on the bottom surface of the ceramic tube shell, which is electrically interconnected with the output terminal through a metal connecting column and a tungsten column. The internal MOS tube chip adopts a vacuum sintering process, which further improves the current carrying capacity and heat dissipation capacity of the LCC16 packaged optical MOS solid state relay.

[0059] The hybrid microcircuit assembly process is used to achieve full chip assembly, compact structure, high reliability, and the ceramic shell and metal cover are sealed by parallel sealing welding, with excellent sealing performance;

[0060] It is a small-sized, multi-group, low-profile, high-power optical MOS solid-state relay with a rated output current of 5A. Compared with optical MOS solid-state relays of the same size and height, its output current capacity is doubled, which can meet the urgent demand for small-sized, low-profile, multi-group, high-power optical MOS solid-state relays in the field of high-tech equipment.

[0061] Second embodiment

[0062] Please refer to Figure 10 and Figure 11 Based on the low-profile, multi-group, high-power optical MOS solid-state relay provided in the first embodiment of this application, the second embodiment of this application provides another low-profile, multi-group, high-power optical MOS solid-state relay. The second embodiment is merely a preferred embodiment of the first embodiment, and implementation of the second embodiment will not affect the implementation of the first embodiment alone.

[0063] Specifically, the second embodiment of the present application provides a low-height, multi-group, high-power optical MOS solid-state relay. The difference is that, in a low-height, multi-group, high-power optical MOS solid-state relay, a disassembly component 23 is provided on the top of the aluminum nitride ceramic tube shell 1, and the disassembly component 23 includes two threaded rods 231, and a disassembly frame 232 is provided between the two threaded rods 231. A threaded through hole 233 that is compatible with the threaded rod 231 is opened inside the disassembly frame 232, and a threaded sleeve 234 is threadedly connected to the surface of the threaded rod 231 and located at the top of the disassembly frame 232.

[0064] The threaded rod 231 is connected to the side of the top of the aluminum nitride ceramic tube shell 1 . The use of the threaded rod 231 and the threaded sleeve 234 facilitates the installation of the disassembly frame 232 on the top of the aluminum nitride ceramic tube shell 1 .

[0065] The working principle of the low-profile, multi-group, high-power optical MOS solid-state relay provided by the utility model is as follows:

[0066] During use, when inspecting and repairing the components inside the aluminum nitride ceramic tube shell 1, the threaded sleeve 234 on the surface of the threaded rod 231 is first removed. After the threaded sleeve 234 is removed, the disassembly frame 233 is pulled apart from the threaded rod 231.

[0067] Compared with related technologies, the low-profile, multi-group, high-power optical MOS solid-state relay provided by the present invention has the following beneficial effects:

[0068] The utility model provides a low-height, multi-group, high-power optical MOS solid-state relay. A disassembly component 23 is arranged on the top of the aluminum nitride ceramic tube shell 1 to prevent the aluminum nitride ceramic tube shell 1 from failing when the components inside the aluminum nitride ceramic tube shell 1 fail, making it easy to disassemble the aluminum nitride ceramic tube shell 1.

[0069] The above description is merely an embodiment of the present invention and does not limit the patent scope of the present invention. Any equivalent structure or equivalent process transformation made by using the contents of the description and drawings of the present invention, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present invention.

Claims

1. A low-profile, multi-group, high-power optical MOS solid-state relay, characterized in that: include: An aluminum nitride ceramic tube shell, wherein an output pin and an input pin are respectively provided inside the aluminum nitride ceramic tube shell, a MOS tube chip, a copper-based aluminum panel, and a photovoltaic chip are respectively provided inside the aluminum nitride ceramic tube shell and above the output pin and the input pin, a second soldering pad is connected to the surface of the copper-based aluminum panel, and a first soldering pad is provided inside the aluminum nitride ceramic tube shell; A plurality of first ceramic mounting platforms and a plurality of first ceramic mounting platforms, wherein the plurality of first ceramic mounting platforms and the plurality of first ceramic mounting platforms are respectively mounted on the left and right sides of the inner wall of the aluminum nitride ceramic tube shell, and a third solder pad, a fourth solder pad and a fifth solder pad are respectively provided inside the aluminum nitride ceramic tube shell; A ceramic circuit board is arranged inside the aluminum nitride ceramic tube shell, and a seventh solder pad, an eighth solder pad and an infrared light-emitting diode chip are respectively arranged on the surface of the ceramic circuit board.

2. The low-profile, multi-group, high-power optical MOS solid-state relay according to claim 1, characterized in that: The output pins include a first group of positive output pins, a first group of negative output pins, a second group of positive output pins, a second group of negative output pins, a third group of positive output pins, a third group of negative output pins, a fourth group of positive output pins and a fourth group of negative output pins.

3. The low-profile, multi-group, high-power optical MOS solid-state relay according to claim 1, characterized in that: The input pins include a first group of positive input pins, a first group of negative input pins, a second group of positive input pins, a second group of negative input pins, a third group of positive input pins, a third group of negative input pins, a fourth group of positive input pins and a fourth group of negative input pins.

4. The low-profile, multi-group, high-power optical MOS solid-state relay according to claim 1, characterized in that: A plurality of silicon-aluminum bonding wires and gold bonding wires are respectively connected between the MOS tube chip, the copper-based aluminum panel and the photovoltaic chip.

5. The low-profile, multi-group, high-power optical MOS solid-state relay according to claim 1, characterized in that: An annular metal welding layer is provided on the top of the aluminum nitride ceramic tube shell.

6. The low-profile, multi-group, high-power optical MOS solid-state relay according to claim 5, characterized in that: A metal cover plate is provided on the top of the annular metal welding layer.

7. The low-profile, multi-group, high-power optical MOS solid-state relay according to claim 1, characterized in that: A disassembly assembly is provided on the top of the aluminum nitride ceramic tube shell, and the disassembly assembly includes two threaded rods. A disassembly frame is provided between the two threaded rods. A threaded through hole adapted to the threaded rod is opened inside the disassembly frame, and a threaded sleeve is threadedly connected to the surface of the threaded rod and located at the top of the disassembly frame.

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