Physical vapor deposition machine table

Abstract

The utility model discloses a physical vapor deposition machine table, which comprises a deposition cavity, and further comprises an isolating ring arranged at the top of the deposition cavity, the cross section of the isolating ring is trapezoidal, the inner side of the isolating ring is provided with a first opening extending towards the outer side, and the outer side of the isolating ring is provided with a second opening; and the clamping ring is arranged on the outer side of the deposition cavity in a sleeving mode and used for being connected with the deposition cavity in a clamping mode. On the basis of existing equipment, the depth size of the edge of the upper edge of the deposition cavity of the machine table is increased, and the trapezoidal notch is formed in the side close to the target material, so that the gap between the upper edge and the target material is increased, point discharge is prevented, spherical defects are avoided, and the product quality is improved.

Description

Technical Field

[0001] The utility model relates to the field of wafer processing, in particular to a physical vapor deposition machine. Background Art

[0002] The deposition chamber of the machine is mainly used for depositing TiN film layers. Its main advantages are high deposition rate and high step coverage. However, the deposition chamber has high voltage and the gas enters from the target above the wafer. The upper edge is close to the edge of the target. If there is a slight deviation in the position, arcing is likely to occur under high voltage, resulting in tip discharge and the formation of spherical defects.

[0003] Although alignment pins are currently used for positioning, slight deviations may still occur during component assembly, so spherical defects may still occur.

[0004] Therefore, improving the current machine to avoid contact between the upper edge of the machine's deposition chamber and the edge of the target material due to the short distance has become an urgent problem to be solved. Utility Model Content

[0005] In order to avoid contact between the upper edge of the deposition chamber of the machine and the edge of the target material due to the short distance, the present invention proposes a physical vapor deposition machine. Based on the original machine, the present application makes the following two improvements: (1) increasing the depth of the edge of the upper edge of the deposition chamber of the machine; (2) forming a trapezoidal notch on the side close to the target material, thereby increasing the gap between the upper edge and the target material, preventing the occurrence of tip discharge, avoiding the formation of spherical defects, thereby improving the quality of the product and bringing higher economic benefits.

[0006] According to one aspect of the present invention, a physical vapor deposition machine is provided, the machine comprising a deposition chamber, and the machine further comprising:

[0007] An isolation ring is disposed at the top of the deposition chamber, the isolation ring has a trapezoidal cross section, the inner side of the isolation ring has a first opening extending outward, and the outer side of the isolation ring has a second opening; and

[0008] The clamping ring is sleeved on the outside of the deposition chamber and is used for clamping with the deposition chamber.

[0009] According to one embodiment of the present invention, the angle between the first opening and the vertical direction is in the range of 30° to 45°.

[0010] According to one embodiment of the present invention, the maximum inner diameter of the isolation ring is ≥329 mm.

[0011] According to one embodiment of the present invention, the second opening extends inwardly along the outside of the deposition chamber to form a step surface.

[0012] According to an embodiment of the present invention, the height of the step surface gradually increases from the second opening inward.

[0013] According to one embodiment of the present invention, the vertical distance between the lowest point of the step surface and the maximum point of the inner diameter of the isolation ring is 10 mm.

[0014] According to one embodiment of the present invention, the angle between the step surface and the horizontal plane is in the range of 30° to 45°.

[0015] According to an embodiment of the present invention, a third opening is provided at the bottom of the clamping ring, and the third opening is rectangular.

[0016] According to an embodiment of the present invention, the isolation ring and the clamping ring are an integrally formed structure.

[0017] According to an embodiment of the present invention, the angle between the second opening and the horizontal direction is in the range of 15° to 30°.

[0018] Due to the adoption of the above technical solution, the present invention has the following advantages compared with the prior art: based on the existing equipment, the present application increases the depth dimension of the upper edge of the deposition chamber of the machine and forms a trapezoidal notch on the side close to the target material, thereby increasing the gap between the upper edge and the target material, preventing the occurrence of tip discharge, avoiding the formation of spherical defects, thereby improving the quality of the product and bringing greater economic benefits. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following briefly introduces the drawings required for use in the embodiments. Obviously, the drawings described below are only some implementation cases of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0020] Figure 1 A schematic structural diagram of a deposition chamber in the prior art is shown;

[0021] Figure 2 Shown is a structural schematic diagram and a partial enlarged view of a physical vapor deposition machine according to an exemplary embodiment of the present utility model;

[0022] Figure 3 A cross-sectional schematic diagram of a physical vapor deposition machine according to an exemplary embodiment of the present invention is shown.

[0023] Description of reference numerals:

[0024] 1. Deposition chamber; 2. Isolation ring; 3. Snap ring; 4. First opening; 5. Second opening; 6. Step surface; 7. Third opening. DETAILED DESCRIPTION

[0025] The detailed description of the following embodiments is used to illustrate the principles of the present invention, but cannot be used to limit the scope of the present invention. The present invention can be implemented in many different forms and is not limited to the specific embodiments disclosed herein, but includes all technical solutions that fall within the scope of the claims.

[0026] The present invention provides these embodiments to make this disclosure thorough and complete, and to fully convey the scope of the present invention to those skilled in the art. It should be noted that unless otherwise specifically stated, the relative arrangements of parts and steps, material components, numerical expressions, and numerical values described in these embodiments should be interpreted as merely exemplary and not as limiting.

[0027] It should be noted that, in the description of this utility model, unless otherwise specified, "plurality" means greater than or equal to two; terms such as "upper," "lower," "left," "right," "inner," and "outer" indicating directions or positional relationships are intended solely to facilitate the description of this utility model and simplify the description. They do not indicate or imply that the devices or components referred to must have a specific orientation, be constructed, or operate in a specific orientation, and therefore should not be construed as limitations on this utility model. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0028] It should also be noted that, in the description of this utility model, unless otherwise expressly specified or limited, the terms "installed," "connected," and "connected" should be understood broadly. For example, they can refer to fixed connections, detachable connections, or integral connections; they can refer to direct connections or indirect connections through an intermediary. Those skilled in the art will understand the specific meanings of these terms in this utility model based on the specific circumstances. When a specific device is described as being located between a first device and a second device, there may or may not be an intervening device between the specific device and the first or second device.

[0029] All terms used in this utility model have the same meaning as those understood by those of ordinary skill in the art to which this disclosure belongs, unless otherwise specifically defined. It should also be understood that terms defined in general dictionaries, for example, should be interpreted as having a meaning consistent with their meaning in the context of the relevant technology, and should not be interpreted in an idealized or highly formal sense, unless explicitly defined herein.

[0030] Technologies, methods, and equipment known to ordinary technicians in the relevant art may not be discussed in detail, but where appropriate, these technologies, methods, and equipment should be considered part of the specification.

[0031] like Figure 1As shown, the deposition chamber 1 of the physical vapor deposition machine used in the prior art has a high voltage and the gas enters in the direction of the target material above the wafer. The upper edge is close to the edge of the target material. If there is a slight deviation in the position, an arc is likely to occur under high voltage, resulting in tip discharge and forming a spherical defect.

[0032] Based on the existing equipment, this application increases the edge depth of the upper edge of the machine deposition chamber 1 and forms a trapezoidal notch on the side close to the target material, thereby increasing the gap between the upper edge and the target material, preventing the occurrence of tip discharge, avoiding the formation of spherical defects, and thus improving product quality.

[0033] like Figure 2 and 3 As shown, the present invention provides a physical vapor deposition machine, which includes a deposition chamber 1, which also includes:

[0034] An isolation ring 2 is provided at the top of the deposition chamber 1. The cross section of the isolation ring 2 is trapezoidal. The inner side of the isolation ring 2 has a first opening 4 extending outward, and the outer side of the isolation ring 2 has a second opening 5; and a clamping ring 3. The clamping ring 3 is sleeved on the outer side of the deposition chamber 1 and is used to be clamped with the deposition chamber 1.

[0035] like Figure 2 As shown, in order to ensure that there is no contact between the deposition chamber 1 and the target material, the outer diameter of the top of the original deposition chamber 1 is 325.0 mm. After improvement based on this application, the outer diameter range of the isolation ring 2 is greater than 329.0 mm.

[0036] In some embodiments, the angle between the first opening 4 and the vertical direction is in the range of 30° to 45°. When the first opening 4 of the isolation ring 2 extends outward and forms an angle with the vertical direction, this design physically increases the spatial interval between the isolation ring 2 and the target material. This increase in interval can effectively prevent accidental contact between the isolation ring 2 and the target material due to vibration, thermal expansion or other mechanical factors during the operation of the equipment. Avoiding contact between the isolation ring 2 and the target material is crucial to extending the service life of the equipment. Frequent contact will not only cause wear and damage to the isolation ring 2 and the target material, but may also affect the overall performance and stability of the equipment. Therefore, the angle design helps to extend the service life of the equipment by reducing the possibility of contact. Preferably, the angle between the first opening 4 and the vertical direction is 45°.

[0037] Based on the above embodiment, the maximum inner diameter of the isolation ring 2 is ≥329 mm. The increased inner diameter and outward opening design can minimize contact with the target material and also allow for rearrangement of surrounding equipment or internal components. This layout optimization can reduce accidental contact caused by space limitations, especially in complex experimental or production environments.

[0038] In some embodiments, the second opening 5 has a step surface 6 extending inward along the outside of the deposition chamber 1. The contact point between the step surface 6 and the deposition chamber 1 forms a tighter sealing line, which helps to reduce the leakage of gas or liquid. This is particularly important for deposition processes that require high vacuum or special gas atmospheres, and can ensure the purity and stability of the deposition environment. By adjusting parameters such as the height, width, and angle of the step surface 6, the isolation ring 2 can be better adapted to different deposition chamber 1 structures and process requirements. This flexibility helps to meet the specific needs of different application scenarios.

[0039] Based on the above embodiment, the height of the stepped surface 6 gradually increases inward from the second opening 5. This gradual increase in the height of the stepped surface 6 provides a gradually increasing support force for the isolation ring 2 from the outside inward. This design helps to distribute and balance the forces acting on the isolation ring 2, reducing the risk of damage caused by stress concentration. When subjected to external forces, the gradually increasing height of the stepped surface 6 can more effectively resist deformation and maintain the overall stability of the isolation ring 2.

[0040] If the isolation ring 2 needs to form a seal with other components, then the gradually increasing step surface 6 may help to achieve better sealing contact. By adjusting the height and shape of the step surface 6, a close fit between the sealing surfaces can be ensured, reducing the risk of leakage.

[0041] Based on the above embodiment, the vertical distance between the lowest point of the step surface 6 and the maximum inner diameter of the isolation ring 2 is 10 mm. The lowest point of the step surface 6 is where the step surface 6 begins to extend upward, and the maximum inner diameter of the isolation ring 2 is where the isolation ring 2 is placed at its uppermost position. The vertical distance between the two positions is 10 mm.

[0042] In some embodiments, the angle between the stepped surface 6 and the horizontal plane ranges from 30° to 45°. The design of the stepped surface 6 increases the contact area between the isolation ring 2 and the surrounding structure, thereby improving overall stability. When the stepped surface 6 is angled with the horizontal plane, the support effect is even more significant, as the angle allows the stepped surface 6 to better embed into the supporting structure, reducing displacement caused by vibration or external forces. Preferably, the angle between the stepped surface 6 and the horizontal plane is 45°.

[0043] Based on the above embodiment, a third opening 7 is provided at the bottom of the clamping ring 3. This third opening 7 is rectangular. The rectangular design of the third opening 7 enables the clamping ring 3 to form a tighter clamping relationship with the deposition chamber 1. This design reduces the risk of failure caused by loose connection or excessive gap, and improves the stability of the connection.

[0044] In some embodiments, the isolation ring 2 and the snap ring 3 are integrally molded structures. The integrally molded structure reduces the number of connection points between components, thereby reducing the risk of failure due to loose or broken connections. This design enables the isolation ring 2 and the snap ring 3 to resist external forces as a whole, thereby enhancing the strength of the overall structure. Since the gap accumulation between components is reduced, the integrally molded structure can provide more stable performance and reduce displacement and deformation caused by vibration or temperature changes. The integrally molded structure reduces the number of parts and processing steps, thereby simplifying the manufacturing process and improving production efficiency. At the same time, it also reduces manufacturing costs and scrap rates.

[0045] Based on the above embodiment, the angle between the second opening 5 and the horizontal direction ranges from 15° to 30°. Preferably, the angle between the second opening 5 and the horizontal direction is 30°.

[0046] Based on the original machine, the present invention has made the following improvements: the outer diameter of the isolation ring 2 is increased. By increasing its outer diameter, the gap distance between the target material and the isolation ring 2 is effectively widened, thereby improving the quality of the product and bringing higher economic benefits. At the same time, the overall structure of the present invention still maintains the characteristics of simplicity and clarity, is easy to process and manufacture and apply in practice, and does not require the introduction of complex or expensive production processes. Therefore, while achieving technological upgrades, it will not bring excessive increases in production costs, and has extremely high practical value and economic significance.

[0047] Those skilled in the art should understand that the discussion of any of the above embodiments is merely illustrative and is not intended to imply that the scope of the disclosure of the embodiments of the present invention (including the claims) is limited to these examples. Based on the principles of the embodiments of the present invention, the technical features of the above embodiments or different embodiments may be combined, and there are many other variations of the different aspects of the above embodiments of the present invention, which are not provided in detail for the sake of simplicity. Therefore, any omissions, modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the embodiments of the present invention shall be included in the scope of protection of the embodiments of the present invention.

Claims

1. A physical vapor deposition machine, comprising a deposition chamber, characterized in that: The machine also includes: an isolation ring, the isolation ring being disposed at the top of the deposition chamber, the isolation ring having a trapezoidal cross-section, a first opening extending outward on the inner side of the isolation ring, and a second opening on the outer side of the isolation ring; and A clamping ring is sleeved on the outside of the deposition chamber and is used for clamping with the deposition chamber.

2. The physical vapor deposition machine according to claim 1, characterized in that: The angle between the first opening and the vertical direction is in the range of 30° to 45°.

3. The physical vapor deposition machine according to claim 1, characterized in that: The maximum inner diameter of the isolation ring is ≥329 mm.

4. The physical vapor deposition machine according to claim 1, wherein: The second opening extends inwardly along the outer side of the deposition chamber to form a step surface.

5. The physical vapor deposition machine according to claim 4, characterized in that: The height of the step surface gradually increases from the second opening inward.

6. The physical vapor deposition machine according to claim 4, characterized in that: The vertical distance between the lowest point of the step surface and the maximum inner diameter of the isolation ring is 10 mm.

7. The physical vapor deposition machine according to claim 4, characterized in that: The included angle between the step surface and the horizontal plane ranges from 30° to 45°.

8. The physical vapor deposition machine according to claim 1, wherein: A third opening is provided at the bottom of the clamping ring, and the third opening is rectangular.

9. The physical vapor deposition machine according to claim 1, characterized in that: The isolation ring and the clamping ring are an integrally formed structure.

10. The physical vapor deposition machine according to claim 1, wherein: The angle between the second opening and the horizontal direction is in the range of 15° to 30°.

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