Etching equipment
By setting up a water mist system and heating device in the etching equipment card cavity, combined with air pressure control, the corrosion problem of chlorine gas residue on the human body and wafer is solved, and safe cleaning and efficient transmission are achieved.
Patent Information
- Application Number
- CN202422186384.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-06
- Publication Date
- 2025-08-15
- Estimated Expiration
- 2034-09-06
AI Technical Summary
In LED production, after dry etching of GaN and GaAs, chlorine-based gas remains on the wafer and carrier disk, causing harm to human health and corrosion of the wafer, which is difficult to effectively remove in the prior art.
A water mist system sprays water mist cleaning carrier disk in the card clamp cavity of the etching equipment, evaporates moisture with the heating device, and maintains a vacuum environment through the air pressure control device to ensure safe transmission.
Effectively remove residual chlorine molecules, prevent them from reacting with air to produce harmful substances, protect human health and extend the cleaning cycle of the carrier disk, improving the safety and efficiency of the equipment.
Smart Images
Figure CN223230313U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of etching, in particular to an etching device. Background Art
[0002] In LED production, chlorine-based gases are the primary etching gases for dry etching of GaN and GaAs. After etching with Cl2 and BCl3 gases, a small amount of Cl2, BCl3, and Cl ions remain on the wafer and the wafer carrier. Once the carrier exits the vacuum equipment, the Cl2 and BCl3 react with water in the air to form HCL, which can be harmful to the oral mucosa (contact can cause eye and respiratory irritation; inhalation of high concentrations can cause pulmonary edema, which can be fatal, and can cause severe damage to the respiratory tract). Cl ions are also highly corrosive, promoting corrosion reactions. They are also highly penetrating, easily penetrating the protective film on the metal surface, causing localized corrosion such as crevices and cavitation. Alternatively, they can enter the product cassette untreated and adhere to it. If the product is exposed to this environment for a long time, it can easily corrode the metal pads and cause Al metal precipitation and oxidation, leading to fading. Utility Model Content
[0003] The purpose of the utility model is to provide an etching device which can effectively remove chlorine molecules attached to the wafer and the carrier plate on which the wafer is placed after the wafer is etched, so as to prevent subsequent hazards.
[0004] The utility model is achieved in this way:
[0005] An etching device, which includes a clamping chamber, a transfer chamber and a process chamber. The process chamber is used to etch multiple wafers to be etched placed on a carrier plate. After etching is completed, the wafers are transferred to the clamping chamber through the transfer chamber. A water mist system is provided above the inside of the clamping chamber, and the water mist system is used to spray water mist to clean the carrier plate after etching is completed. A drain port is provided below the inside of the clamping chamber, and the drain port is used to discharge the liquid after cleaning. A heating device is also installed on the outer wall of the clamping chamber, and the heating device is used to heat the clamping chamber to evaporate residual moisture on the carrier plate.
[0006] By setting up a water mist system above the inside of the clamping chamber, the carrier plate is cleaned by spraying water mist, so that the chlorine molecules remaining on the surface of the wafer and the carrier plate are dissolved in water, so as to prevent the chlorine molecules remaining on the wafer from reacting with water in the air after the wafer is taken out of the etching equipment and causing harm to the human body.
[0007] Furthermore, the process chamber uses chlorine-based gas to etch the multiple wafers to be etched placed on the carrier plate. After etching is completed, the water mist system cleans the carrier plate to dissolve the chlorine molecules attached to the carrier plate in water.
[0008] Furthermore, the heating device includes a power supply device and a heating material layer wrapped around the outer side wall of the clamping cavity, and the power supply device is used to provide electricity to enable the heating material layer to start heating.
[0009] The cleaned carrier plate is dried by using a heating device to facilitate subsequent product transportation and operation.
[0010] Furthermore, the etching equipment also includes an air pressure control device, which is arranged below the clamping cavity and is used to control the air pressure in the clamping cavity.
[0011] Since a vacuum environment is required to transfer the carrier plate from the clamping chamber to the transmission chamber, a water mist system is set up in the clamping chamber to clean the carrier plate, which will cause more water vapor in the clamping chamber and the pressure cannot be reduced to a vacuum level. Therefore, an air pressure control device is set below the clamping chamber to better control the air pressure in the clamping chamber to facilitate the transmission of the carrier plate.
[0012] Furthermore, the air pressure control device includes a connecting pipe and a dry pump, one end of the connecting pipe is connected to the lower end of the clamping chamber, and the other end is connected to the dry pump. The dry pump evacuates the clamping chamber through the connecting pipe to adjust the air pressure in the clamping chamber.
[0013] Furthermore, an air inlet is provided above the clamping cavity, and the air inlet is used to introduce inert gas. When the dry pump evacuates the clamping cavity, the inert gas is introduced simultaneously to purge the interior of the clamping cavity.
[0014] Furthermore, the inert gas includes nitrogen.
[0015] Furthermore, the air pressure control device also includes a molecular pump, a first connecting pipeline and a second connecting pipeline. One end of the molecular pump is connected to the connecting pipeline through the first connecting pipeline, and the other end is connected to the connecting pipeline through the second connecting pipeline; the molecular pump and the dry pump cooperate to evacuate the clamping chamber to adjust the gas in the clamping chamber.
[0016] By combining a molecular pump with a dry pump to pump air, the time to establish a high vacuum can be greatly reduced.
[0017] Furthermore, at least one pneumatic valve is provided on each of the first communicating pipeline, the second communicating pipeline and the connecting pipeline, and the switch of the current pipeline is controlled by the switch of the pneumatic valve.
[0018] Furthermore, before etching begins, the clamping chamber is used to store multiple carrier plates, each of which has multiple wafers to be etched placed on it. When etching starts, the clamping chamber transfers the carrier plates one by one through the transfer chamber to the process chamber for etching.
[0019] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, preferred embodiments are given below and described in detail with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS
[0020] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. The components of the embodiments of the present invention generally described and shown in the drawings here can be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of the present invention provided in the drawings is not intended to limit the scope of the utility model for protection, but merely represents selected embodiments of the present invention. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.
[0021] Figure 1 The figure shows a structural diagram of an etching device provided by the present invention.
[0022] Figure 2 The figure shows a structural schematic diagram of a carrier plate provided by the present invention.
[0023] Figure 3 A schematic diagram of regulating the air pressure of a clamping cavity provided by the present invention is shown.
[0024] Figure 4 A schematic diagram showing another method of regulating the air pressure in the clamping cavity provided by the present invention is shown.
[0025] Diagram: 100-etching equipment; 110-clamping chamber; 120-transfer chamber; 130-process chamber; 140-carrying plate; 141-wafer; 111-water mist system; 112-drain port; 113-heating device; 114-air inlet; 151-connecting pipeline; 152-dry pump; 153-molecular pump; 154-first connecting pipeline; 155-second connecting pipeline; 150-air pressure control device. DETAILED DESCRIPTION
[0026] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. The components of the embodiments of the present invention generally described and shown in the drawings here can be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of the present invention provided in the drawings is not intended to limit the scope of the utility model for protection, but merely represents selected embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without making creative work are within the scope of protection of the present invention.
[0027] Currently, wafer processing includes a variety of etching processes, such as Mesa etching, ISO etching, and RPV etching. These processes primarily utilize a chlorine-based gas as the primary etching gas. This etching gas is transformed into a plasma under the influence of a high-frequency magnetic field. This plasma, under the influence of a biased electric field, bombards the material being etched, etching a specific pattern. The chlorine-based gases employed include Cl₂ and BCl₃. After etching, a small amount of Cl₂, BCl₃, and Cl₃ ions remain on the wafer and the wafer carrier. If left untreated, the Cl₂ and BCl₃ gases remaining on the carrier react with water in the air to form HCl when the carrier is removed from the etching equipment. For example, the chemical reactions are: Cl₂ + H₂O → HClO (pungent) + HCl (harmful), and BCl₃ + 3H₂O → B(OH)₃ + 3HCl (harmful). HCl can irritate the oral mucosa and respiratory tract, causing harm. Secondly, Cl ions are highly corrosive, promoting corrosion reactions. They also have strong penetrating properties, easily penetrating the protective film on the metal surface and causing corrosion damage to the wafer itself. For example, the chemical reaction equation is: 2Al(s) + 3Cl-(g) = 2AlCl3. Therefore, the carrier and wafer must be handled after etching to prevent these hazards.
[0028] Please refer to Figure 1 , is a schematic structural diagram of an etching device 100 provided by an embodiment of the present invention. The etching device 100 includes a clamping chamber 110 , a transfer chamber 120 and a process chamber 130 .
[0029] Before etching begins, the staff will sequentially place multiple carrier plates into the clamping chamber 110. Figure 2The figure shows a schematic diagram of the structure of a carrier plate 140 provided by an embodiment of the present invention, on which a plurality of wafers 141 to be etched are placed. When etching begins, the clamping chamber 110 sends the carrier plates 140 one by one through the transfer chamber 120 to the process chamber 130 for etching. The process chamber 130 uses chlorine-based gas as the main etching gas, which becomes plasma under the joint action of a high-frequency magnetic field. The plasma bombards the wafers 141 to be etched under the action of a bias electric field to etch a specific pattern. After etching is completed, the process chamber 130 transfers the carrier plate 140 to the clamping chamber 110 through the transfer chamber 120. The clamping chamber 110 processes the chlorine molecules remaining on the carrier plate 140, and then the staff takes them out to avoid harm.
[0030] A water mist system 111 is located above the interior of the clamp chamber 110. This mist system 111 is used to spray water mist to clean the carrier plate 140 after etching. A drain port 112 is located below the interior of the clamp chamber 110. This drain port 112 is used to remove waste liquid after cleaning. Because the chlorine-based gases used in the etching process chamber 130 include Cl2 and BC13 gases, the chlorine molecules remaining on the carrier plate 140 after etching may include Cl2, BC13, and Cl ions. BC13 is soluble in water and organic solvents, Cl2 is soluble in water and alkaline solutions, and Cl ions are hydrophilic ions with a unit negative charge. They are easily soluble in water and can react with other ions in water to form various salts. Based on the characteristics of the above-mentioned chlorine molecules, after the etching of the carrier plate 140 is completed, water mist is sprayed out through the water mist system 111 to clean the carrier plate 140 and the multiple etched wafers 141 carried thereon. This can effectively remove the chlorine molecules remaining on the carrier plate 140 and the wafers 141, and prevent the chlorine molecules remaining on the carrier plate 140 from reacting with moisture in the air after the carrier plate 140 leaves the etching equipment 100, causing harm to the workers. In addition, the cleaning cycle of the carrier plate 140 can also be extended. Under normal circumstances, the carrier plate 140 needs to be cleaned after being used 10 times in the normal process. Since the carrier plate 140 is flushed by the water mist system 111 each time the etching is completed, the cleaning cycle of the carrier plate 140 itself can be doubled. Furthermore, the waste liquid generated in the clamping chamber 110 can be discharged through the drain port 112 and flow into the factory system for further processing.
[0031] The outer wall of the clamping chamber 110 is also mounted with a heating device 113, which is used to heat the clamping chamber 110 to evaporate any residual moisture on the carrier plate 140. After the carrier plate 140 is rinsed by the water mist system 111, residual moisture remains on both the carrier plate 140 and the wafers 141, hindering subsequent product transport and processing. Therefore, the clamping chamber 110 must be heated by the heating device 113 to evaporate any residual moisture on the carrier plate 140 and the wafers 141. The heating device 113 includes a power supply and a heating material layer wrapped around the outer wall of the clamping chamber 110. The power supply is used to provide electricity to initiate heating of the heating material layer, which may be, but is not limited to, a resistance wire.
[0032] Furthermore, the transfer of the carrier plate 140 loaded with multiple wafers 141 between the clamping chamber 110, the transfer chamber 120 and the process chamber 130 needs to be carried out in a vacuum environment. Since the clamping chamber 110 is provided with a water mist system 111 to clean the carrier plate 140 after etching is completed, in order to ensure the normal transfer of the carrier plate 140, an air pressure control device 150 is also required to adjust the air pressure of the clamping chamber 110 so as to meet the two different application scenarios of normal air pressure for cleaning the carrier plate 140 and vacuum air pressure for transferring the carrier plate 140.
[0033] The air pressure control device 150 is disposed below the clamping chamber 110 and includes a connecting pipe 151 and a dry pump 152. One end of the connecting pipe 151 is connected to the lower end of the clamping chamber 110, and the other end is connected to the dry pump 152. The dry pump 152 pumps air into the clamping chamber 110 through the connecting pipe 151 to adjust the air pressure in the clamping chamber 110. At least one pneumatic valve is provided on the connecting pipe 151, and the opening and closing of the pneumatic valve controls the opening and closing of the connecting pipe 151.
[0034] Furthermore, the air pressure control device 150 also includes a molecular pump 153, a first connecting line 154, and a second connecting line 155. One end of the molecular pump 153 is connected to the connecting line 151 via the first connecting line 154, and the other end is connected to the connecting line 151 via the second connecting line 155. The molecular pump 153 can work with the dry pump 152 to evacuate the clamping chamber 110 to accelerate the adjustment of the air pressure in the clamping chamber 110 to a high vacuum state. Pneumatic valves are provided on both the first connecting line 154 and the second connecting line 155 to adjust the current pipeline's on / off state by opening and closing the pneumatic valves.
[0035] When the current carrier plate 140 is cleaned and dried, the next batch of carrier plates 140 needs to be sent into the clamping chamber 110 and sent into the process chamber 130 through the transfer chamber 120 for processing. At this time, the air pressure in the clamping chamber 110 needs to be restored to a vacuum state. The air pressure adjustment method in the clamping chamber 110 is described below.
[0036] Please refer to Figure 3 The figure shows a schematic diagram of regulating the air pressure of the clamping chamber 110 provided by the present invention. First, all the pneumatic valves on the connecting pipe 151 are opened, and the pneumatic valves on the first connecting pipe 154 and the second connecting pipe 155 are closed. At this time, the clamping chamber 110 is evacuated by the dry pump 152 to reduce the air pressure in the clamping chamber 110. In order to better ensure that the clamping chamber 110 remains dry, an air inlet 114 can be provided above the clamping chamber 110. The air inlet 114 is used to introduce an inert gas, which includes but is not limited to nitrogen. When the dry pump 152 evacuates the clamping chamber 110, the dry inert gas is simultaneously introduced to purge the interior of the clamping chamber 110, which can better remove the residual water vapor in the clamping chamber 110. After the dry pump 152 finishes evacuating the air, the air inlet 114 can be closed to stop the introduction of the inert gas.
[0037] In order to increase the speed of vacuuming the clamp chamber 110, please refer to Figure 4 , is another schematic diagram of regulating the air pressure of the clamping chamber 110 provided by the present invention. After the dry pump 152 is used to evacuate the clamping chamber 110 for a period of time, the pneumatic valves provided on the upper and lower sides of the connecting pipe 151 are closed, and the pneumatic valves provided on the first connecting pipe 154 and the second connecting pipe 155 are opened to allow the molecular pump 153 to be connected. At this time, the molecular pump 153 and the dry pump 152 work together to evacuate the clamping chamber 110, as shown in FIG. Figure 4 The connection shown in FIG can greatly improve the pumping efficiency. If only the dry pump 152 is used to pump the clamping chamber 110 to a high vacuum (less than 0.1 mtorr), it would take about an hour. However, the dry pump 152 is first used to pump the clamping chamber 110 to a rough vacuum state (1-10 mtorr) for 1 minute, and then the molecular pump 153 is used in conjunction with the dry pump 152 to pump the clamping chamber 110 to a high vacuum state (less than 0.1 mtorr) for 15 seconds. This greatly saves pumping time and improves work efficiency.
[0038] It should be noted that the molecular pump 153 is also connected to the transfer chamber 120, so that the air pressure in the transfer chamber 120 can also be adjusted by the molecular pump 153 and the dry pump 152, thereby improving the reuse rate of components and simplifying the equipment structure. In addition, a molecular pump and a dry pump are also installed below the process chamber 130 to adjust the air pressure in the process chamber 130. Therefore, by installing molecular pumps and dry pumps below the three cavities, the air pressure in each cavity can be controlled, ensuring a high vacuum state when the carrier plate 140 is being transferred, ensuring the normal operation of the equipment.
[0039] In summary, the utility model provides an etching device, which includes a clamping chamber, a transfer chamber and a process chamber. The process chamber etches multiple wafers to be etched placed on a carrier plate, and after etching is completed, they are transferred to the clamping chamber through the transfer chamber; a water mist system is provided above the inside of the clamping chamber, and the water mist system is used to spray water mist to clean the carrier plate after etching is completed, so as to dissolve the chlorine-containing etching gas remaining on the carrier plate, so as to avoid the chlorine-containing etching gas reacting with moisture in the air after the carrier plate is directly taken out, and the reaction products thereof cause harm to the human body; a drain port is provided at the bottom of the inside of the clamping chamber for discharging the liquid after cleaning; a heating device is provided on the outer wall of the clamping chamber, which can heat the clamping chamber to evaporate the residual moisture on the carrier plate.
[0040] It should also be noted that, in the description of this utility model, unless otherwise expressly specified or limited, the terms "disposed," "installed," "connected," and "connected" should be understood in a broad sense. For example, they can refer to fixed connections, detachable connections, or integral connections; mechanical connections, electrical connections; direct connections, indirect connections through an intermediate medium, and internal connections between two components. Those skilled in the art will understand the specific meanings of the above terms in this utility model based on the specific circumstances.
[0041] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, it does not need to be further defined or explained in subsequent drawings.
[0042] In the description of the present utility model, it should be noted that the terms "upper", "lower", "left", "right", "inside", "outside" and the like indicate directions or positional relationships based on the directions or positional relationships shown in the accompanying drawings, or are directions or positional relationships in which the utility model product is usually placed when in use. These directions or positions are only for the convenience of describing the present utility model and simplifying the description, and do not indicate or imply that the device or component referred to must have a specific direction, be constructed and operated in a specific direction. Therefore, they cannot be understood as limitations on the present utility model. The above description is only a preferred embodiment of the present utility model and is not intended to limit the present utility model. For those skilled in the art, the present utility model may be subject to various modifications and variations. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present utility model shall be included in the scope of protection of the present utility model.
Claims
1. An etching device, characterized in that: The etching equipment includes a clamping chamber, a transfer chamber and a process chamber. The process chamber is used to etch multiple wafers to be etched placed on a carrier plate. After etching, the wafers are transferred to the clamping chamber through the transfer chamber. A water mist system is provided above the interior of the clamping cavity, and the water mist system is used to spray water mist to clean the carrier plate after etching; a liquid drain port is provided below the interior of the clamping cavity, and the liquid drain port is used to discharge the liquid after cleaning; A heating device is also installed on the outer wall of the clamping cavity, and the heating device is used to heat the clamping cavity to evaporate residual moisture on the carrying plate.
2. The etching apparatus according to claim 1, wherein The process chamber uses chlorine-based gas to etch multiple wafers to be etched placed on the carrier plate. After the etching is completed, the water mist system cleans the carrier plate to dissolve the chlorine molecules attached to the carrier plate in water.
3. The etching equipment according to claim 1, wherein The heating device includes a power supply device and a heating material layer wrapped around the outer side wall of the clamping cavity. The power supply device is used to provide electricity to enable the heating material layer to start heating.
4. The etching apparatus according to claim 1, wherein The etching equipment further includes an air pressure control device, which is disposed below the clamping cavity and is used to control the air pressure in the clamping cavity.
5. The etching apparatus according to claim 4, wherein The air pressure control device includes a connecting pipeline and a dry pump. One end of the connecting pipeline is connected to the lower end of the clamping chamber, and the other end is connected to the dry pump. The dry pump evacuates the clamping chamber through the connecting pipeline to adjust the air pressure in the clamping chamber.
6. The etching apparatus according to claim 5, wherein An air inlet is also provided above the clamping cavity, and the air inlet is used to introduce inert gas. When the dry pump evacuates the clamping cavity, the inert gas is introduced simultaneously to purge the interior of the clamping cavity.
7. The etching apparatus according to claim 6, wherein: The inert gas includes nitrogen.
8. The etching device according to any one of claims 5 to 7, characterized in that: The air pressure control device further includes a molecular pump, a first connecting pipeline and a second connecting pipeline, one end of the molecular pump is connected to the connecting pipeline through the first connecting pipeline, and the other end is connected to the connecting pipeline through the second connecting pipeline; The molecular pump cooperates with the dry pump to evacuate the clamping cavity to adjust the gas in the clamping cavity.
9. The etching apparatus according to claim 8, wherein At least one pneumatic valve is provided on each of the first communicating pipeline, the second communicating pipeline and the connecting pipeline, and the switch of the current pipeline is controlled by the switch of the pneumatic valve.
10. The etching apparatus according to claim 1, wherein Before etching begins, the clamping chamber is used to store multiple carrier plates, each of which has multiple wafers to be etched. When etching starts, the clamping chamber transfers the carrier plates one by one through the transfer chamber to the process chamber for etching.