Gas phase supply device system and gas phase deposition device comprising same

Abstract

The utility model provides a gas phase supply device system and a vapor deposition device comprising the same, the device system comprises a raw material supply unit, a raw material pre-control unit, a buffer unit and a vaporization unit which are sequentially connected through a liquid phase conveying pipeline, and the device system further comprises a gas conveying pipeline connected with the vaporization unit; the device system further comprises a carrier gas supply unit independently connected with the vaporization unit; the device system further comprises an electric control system, and the electric control system is connected with all circuits in the device system and used for controlling the device system. According to the utility model, automatic feeding and continuous vaporization can be realized, the flow controllability is high, and the application prospect is wide.

Description

Technical Field

[0001] The utility model relates to the technical field of vapor deposition, in particular to a vapor supply device system and a vapor deposition device comprising the same. Background Art

[0002] At room temperature, titanium tetrachloride is a colorless liquid with a melting point of -24.1°C and a boiling point of 136.4°C. Its saturated vapor pressure (kPa) is 1.33 (at 21.3°C) and its critical temperature (°C) is 358°C. When heated or exposed to water, it releases heat and toxic, corrosive fumes, making it highly corrosive.

[0003] Crystal fiber is a type of fiber laser that has better transmission properties for longer wavelengths than glass fiber. The resulting fiber laser can achieve higher coupling efficiency with conventional optical fibers, further reducing optical losses. Titanium-doped single-crystal fibers can generate laser light under low-power pumping conditions and are therefore used in the manufacture of crystal fiber lasers and crystal fiber amplifiers for fiber-optic communication systems. However, the manufacture of crystal fiber requires a controlled flow of high-purity, stable titanium tetrachloride supplied to the deposition system in a gaseous form.

[0004] Therefore, it is necessary to develop a vapor deposition device that can stably provide a vapor flow rate. Utility Model Content

[0005] In order to solve the above technical problems, the utility model provides a gas phase supply device system and a gas phase deposition device containing the same, which can realize automatic feeding, continuous vaporization and has feed upper limit protection, automatically achieves the balance between feeding and supplying, and has broad application prospects.

[0006] To achieve this purpose, the present invention adopts the following technical solutions:

[0007] In a first aspect, the present invention provides a gas phase supply device system, the device system comprising a raw material supply unit, a raw material pre-control unit, a buffer unit, and a vaporization unit connected in sequence via a liquid phase delivery pipeline, the device system also comprising a gas delivery pipeline connected to the vaporization unit;

[0008] The device system further includes a carrier gas supply unit separately connected to the vaporization unit;

[0009] The device system further includes an electric control system, which is connected to all circuits in the device system and is used to control the device system.

[0010] The gas phase supply device system provided by the utility model is equipped with a raw material pre-control unit and a buffer unit, so it can better control the stability of the gas phase flow generated by the vaporization unit. In addition, by setting up an electric control system, the PLC in the electric control system can be set and automatically controlled, and can realize automatic feeding, continuous vaporization, and feed high limit protection, thereby automatically achieving the balance between feeding and supplying, and has broad application prospects.

[0011] Preferably, the raw material supply unit includes an electronic scale measuring component, and / or the raw material pre-control unit includes a micron-level filtering component.

[0012] The utility model is capable of improving the tolerance of the entire device system to the raw materials to be vaporized by arranging a micron-level filtering component, thereby improving the quality of the gas phase after vaporization.

[0013] Preferably, the raw material pre-control unit further includes a raw material supply disk.

[0014] Preferably, the buffer unit comprises a buffer container, the buffer container is provided with a metering device, and the metering device comprises an electronic scale metering component and / or a liquid level meter.

[0015] The setting of the metering device of the utility model can accurately control the amount of the raw materials to be vaporized remaining in the buffer unit, thereby accurately regulating the delivery flow through the electronic control system to achieve stable operation of the entire process.

[0016] Preferably, the vaporization unit includes a vaporization chamber, heating elements are provided at the bottom and around the vaporization chamber, and the heating elements are evenly distributed around the vaporization chamber; and / or a porous guide atomization component is provided inside the vaporization chamber.

[0017] The utility model can significantly improve the uniformity of vaporization by arranging vaporization chambers on all sides and at the bottom, and arranging a porous flow-guiding atomization component inside the vaporization chamber, thereby further improving the uniformity of the gas phase flow after vaporization.

[0018] Preferably, the vaporization unit includes a vaporization unit inlet connected to the buffer unit, and a vaporization unit outlet connected to the gas delivery pipeline.

[0019] Preferably, a spiral channel and a liquid phase distributor are sequentially provided inside the inlet of the vaporization unit; and a nozzle is provided at the outlet of the vaporization unit.

[0020] The arrangement of the spiral channel in the utility model can make the raw materials to be vaporized enter the vaporization chamber evenly in the spiral motion direction, so that the vaporization is more uniform and the gas phase flow generated after vaporization is more stable.

[0021] Preferably, at the inlet of the vaporization unit, the vaporization unit further includes a flow detection device, and the flow detection device is a mass flow detection device.

[0022] Preferably, the carrier gas supply unit has a carrier gas supply pipeline, and a mass flow detection device is provided on the carrier gas supply pipeline.

[0023] The carrier gas supply unit further includes a carrier storage device connected to the other end of the carrier gas supply pipeline.

[0024] Preferably, a carrier gas heater is provided on the carrier gas supply pipeline.

[0025] Preferably, the device system further comprises a purge gas delivery unit connected to the raw material pre-control unit.

[0026] Preferably, the device system is provided with a vacuum unit between the buffer unit and the vaporization unit.

[0027] Preferably, the device system further comprises a system leakage detector connected to the raw material supply unit, the raw material pre-control unit and the buffer unit.

[0028] The operating method of the gas phase supply device system provided by the utility model includes:

[0029] The purge gas delivery unit is used to deliver purge gas to exhaust the air in the raw material pre-control unit. The vaporized raw materials are weighed and measured from the raw material supply unit, and then delivered to the raw material pre-control unit. The flow rate is delivered according to the process parameters set by the electronic control system and micron-filtered in the raw material pre-control unit.

[0030] The raw materials to be vaporized that have been filtered at the micron level are then sent to the buffer unit for temporary storage to maintain the stability of the overall pipeline transportation. The raw materials to be vaporized enter the vaporization unit from the buffer unit through the inlet of the vaporization unit and are heated and vaporized at a temperature of 150-160°C. At the same time, the carrier gas delivered from the carrier gas supply unit is heated by the carrier gas heater and then delivered to the vaporization unit to mix with the vaporized material and ejected from the outlet of the vaporization unit into the gas delivery pipeline.

[0031] The present invention has no special restrictions on the composition of the raw material to be vaporized, and the raw material to be vaporized that is familiar to those skilled in the art can be used, or can be adjusted according to actual conditions. Specifically, the raw material to be vaporized is titanium tetrachloride.

[0032] In a second aspect, the present invention provides a vapor deposition device, which includes the vapor supply device system described in the first aspect.

[0033] The present invention has no special restrictions on other devices and structures of the vapor deposition device, which can be adjusted according to actual conditions. For example, it can be a vapor deposition device for preparing single crystal optical fibers.

[0034] Compared with the prior art, the present invention has at least the following beneficial effects:

[0035] The gas phase supply device system provided by the utility model can realize automatic feeding and continuous vaporization, and can perform feed upper limit protection and automatically realize the balance between feeding and supplying, and has broad application prospects. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] Figure 1 This is a schematic diagram of the gas phase supply device system provided in Example 1 of the present invention.

[0037] In the figure, 1. Raw material supply unit; 2. Raw material pre-control unit; 3. Buffer unit control panel; 4. Buffer unit; 5. Inlet of vaporization unit; 6. Vaporization unit; 7. Carrier gas supply unit; 8. Gas delivery pipeline; 9. Purge gas delivery unit; 10. Buffer unit pressurized gas supply pipeline; 11. Vacuum unit; 12. Electronic control system; 13. System leakage detector. DETAILED DESCRIPTION

[0038] To facilitate understanding of the present invention, the present invention is provided with the following embodiments. Those skilled in the art should understand that the embodiments are only provided to help understand the present invention and should not be considered as specific limitations of the present invention.

[0039] It should be understood that, in the description of the present invention, the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention.

[0040] It should be noted that, in the description of this utility model, unless otherwise expressly specified or limited, the terms "disposed," "connected," and "connected" should be understood in a broad sense. For example, they can refer to fixed connections, detachable connections, or integral connections; mechanical connections, electrical connections; direct connections, indirect connections through an intermediate medium, and internal connections between two components. Those skilled in the art will understand the specific meanings of the above terms in this utility model based on specific circumstances.

[0041] Those skilled in the art should understand that the present invention must include necessary pipelines, conventional valves and general pump equipment for realizing a complete process, but the above content does not constitute the main innovation of the present invention. Those skilled in the art can add layouts on their own based on the process flow and equipment structure selection, and the present invention does not make special requirements or specific limitations on this.

[0042] Example 1

[0043] This embodiment provides a gas phase supply device system, such as Figure 1 As shown, the device system includes a raw material supply unit 1, a raw material pre-control unit 2, a buffer unit 4 and a vaporization unit 6 connected in sequence through a liquid phase transmission pipeline, and the device system also includes a gas transmission pipeline 8 connected to the vaporization unit 6.

[0044] The raw material supply unit 1 includes an electronic scale measuring component, the raw material pre-control unit 2 includes a micron-level filtering component, and the buffer unit 4 includes a buffer container, which is provided with a measuring device, and the measuring device includes an electronic scale measuring component.

[0045] The vaporization unit 6 includes a vaporization chamber, and heating elements are provided at the bottom and around the periphery of the vaporization chamber, and the heating elements are evenly distributed around the periphery of the vaporization chamber; a porous flow-guiding atomization assembly is provided inside the vaporization chamber. The vaporization unit 6 includes a vaporization unit 6 inlet connected to the buffer unit 4, and a vaporization unit 6 outlet connected to the gas delivery pipeline 8. A spiral channel and a liquid phase distributor are sequentially provided inside the vaporization unit 6 inlet; a nozzle is provided at the vaporization unit 6 outlet. At the vaporization unit 6 inlet, the vaporization unit 6 also includes a flow detection device, which is a mass flow detection device.

[0046] The device system further includes a buffer unit pressurized gas supply pipeline 10 separately connected to the buffer unit 4 , and is further provided with a buffer unit control panel 3 connected to the buffer unit 4 .

[0047] The device system also includes a carrier gas supply unit 7 separately connected to the vaporization unit 6. The carrier gas supply unit 7 has a carrier gas supply pipeline, and the carrier gas supply pipeline is provided with a mass flow detection device. The carrier gas supply unit 7 also includes a carrier storage device connected to the other end of the carrier gas supply pipeline. The carrier gas supply pipeline is provided with a carrier gas heater.

[0048] The device system further includes an electric control system 12 , which is connected to all circuits in the device system and is used to control the device system.

[0049] The device system further includes a purge gas delivery unit 9 connected to the raw material pre-control unit 2 .

[0050] The device system is provided with a vacuum unit 11 between the buffer unit 4 and the vaporization unit 6 .

[0051] The device system further includes the system liquid leakage detector 13 connected to the raw material supply unit 1 , the raw material pre-control unit 2 and the buffer unit 4 .

[0052] Specifically, the electronic control system 12 has PLC control logic, and the electronic control system 12 also includes a human-machine display interface, which can display process parameters such as titanium tetrachloride weight, buffer tank liquid level, evaporation pressure, temperature and output flow, and the electronic control system 12 can set and automatically control the process parameters.

[0053] The operating method of the gas phase supply device system provided in this embodiment includes:

[0054] The purge gas delivery unit 9 delivers purge gas to exhaust the air in the raw material pre-control unit 2. The raw material to be vaporized is weighed and metered from the raw material supply unit 1, and then delivered to the raw material pre-control unit 2. The flow rate is delivered according to the process parameters set by the electronic control system 12 and micron-filtered in the raw material pre-control unit 2.

[0055] The raw materials to be vaporized that have been filtered at the micron level are then sent to the buffer unit 4 for temporary storage to maintain the stability of the overall pipeline transportation. The raw materials to be vaporized enter the vaporization unit 6 from the inlet 5 of the vaporization unit from the buffer unit 4 and are heated and vaporized at a temperature of 150-160°C. At the same time, the carrier gas delivered from the carrier gas supply unit 7 is heated by the carrier gas heater and then delivered to the vaporization unit 6 to mix with the vaporized material and ejected from the outlet of the vaporization unit 6 into the gas delivery pipeline 8.

[0056] Application Example 1

[0057] This application example provides a vapor deposition device, which includes the vapor supply device system described in Example 1. Specifically, the vapor deposition device is a vapor deposition device for preparing single crystal optical fibers, and the raw material to be vaporized is titanium tetrachloride.

[0058] Example 2

[0059] This embodiment provides a gas phase supply device system, which is the same as that of embodiment 1 except that the vaporization unit is not provided with a flow detection device at the inlet of the vaporization unit.

[0060] Since the vaporization unit of this embodiment is not provided with a flow detection device, compared with Example 1, the flow control of Example 1 is more stable.

[0061] Example 3

[0062] This embodiment provides a gas phase supply device system, which is the same as that of embodiment 1 except that no spiral channel is provided inside the inlet of the vaporization unit.

[0063] Since the spiral channel is not provided inside the inlet of the vaporization unit in this embodiment, the vaporization process of embodiment 1 is more uniform compared with embodiment 1, resulting in a more stable and controllable gas phase flow rate.

[0064] Example 4

[0065] This embodiment provides a gas phase supply device system, which is the same as that of embodiment 1 except that a heating element is only provided at the bottom of the vaporization chamber.

[0066] Since the heating element is only provided at the bottom of the vaporization chamber in this embodiment, the vaporization process of embodiment 1 is more uniform compared to embodiment 1, resulting in a more stable and controllable gas phase flow rate.

[0067] Example 5

[0068] This embodiment provides a gas phase supply device system, which is the same as that of embodiment 1 except that heating elements are only provided around the vaporization chamber.

[0069] Since the heating elements are only provided around the vaporization chamber in this embodiment, the vaporization process of the embodiment 1 is more uniform compared to the embodiment 1, resulting in a more stable and controllable gas phase flow.

[0070] Example 6

[0071] This embodiment provides a gas phase supply device system, which is the same as that of embodiment 1 except that the micron-level filtering component is not provided in the device system.

[0072] This embodiment does not include a micron-level filter component. Compared with Example 1, Example 1 has a higher tolerance for raw materials and the quality of the subsequently generated gas phase flow is higher.

[0073] Comparative Example 1

[0074] This comparative example provides a gas phase supply device system. Except that the raw material pre-control unit is not provided, the gas phase supply device system is the same as Example 1, and will not be described in detail here.

[0075] This comparative example does not set up a raw material pre-control unit. Compared with Example 1, Example 1 has a higher tolerance for raw materials, and the quality of the subsequently generated gas phase flow is higher, and the gas phase flow generated by vaporization can be better and more accurately controlled.

[0076] Comparative Example 2

[0077] This comparative example provides a gas phase supply device system. Except for not providing a buffer unit, the gas phase supply device system is the same as Example 1, and will not be described in detail here.

[0078] This comparative example does not include a buffer unit. Compared with Example 1, Example 1 can better and more accurately control the gas phase flow rate generated by vaporization, and the gas phase flow rate is more stable.

[0079] The above embodiments illustrate the detailed features of the present invention, but the present invention is not limited to the above detailed features, that is, it does not mean that the present invention must rely on the above detailed features to be implemented. Those skilled in the art should understand that any improvement to the present invention, equivalent replacement of the selected technical features of the present invention, addition of auxiliary technical features, selection of specific methods, etc., all fall within the scope of protection and disclosure of the present invention.

Claims

1. A gas phase supply device system, characterized in that: The device system includes a raw material supply unit, a raw material pre-control unit, a buffer unit and a vaporization unit connected in sequence through a liquid phase delivery pipeline, and the device system also includes a gas delivery pipeline connected to the vaporization unit; The device system further includes a carrier gas supply unit separately connected to the vaporization unit; The device system further includes an electric control system, which is connected to all circuits in the device system and is used to control the device system.

2. The gas phase supply device system according to claim 1, characterized in that: The raw material supply unit includes an electronic scale measuring component, and / or the raw material pre-control unit includes a micron-level filtering component.

3. The gas phase supply device system according to claim 1, characterized in that: The buffer unit includes a buffer container, and a metering device is provided on the buffer container.

4. The gas phase supply device system according to claim 1, characterized in that: The vaporization unit includes a vaporization chamber, wherein heating elements are arranged at the bottom and around the vaporization chamber, and the heating elements are evenly distributed around the vaporization chamber; and / or, a porous guide atomization component is arranged inside the vaporization chamber.

5. The gas phase supply device system according to claim 1, characterized in that: The vaporization unit includes a vaporization unit inlet connected to the buffer unit, and a vaporization unit outlet connected to the gas delivery pipeline; At the inlet of the vaporization unit, the vaporization unit further includes a flow detection device, which is a mass flow detection device.

6. The gas phase supply device system according to claim 5, characterized in that: The carrier gas supply unit has a carrier gas supply pipeline, and a mass flow detection device is provided on the carrier gas supply pipeline; The carrier gas supply unit further includes a carrier storage device connected to the other end of the carrier gas supply pipeline.

7. The gas phase supply device system according to claim 1, characterized in that: The device system further comprises a purge gas delivery unit connected to the raw material pre-control unit.

8. The gas phase supply device system according to claim 1, characterized in that: The device system is provided with a vacuum unit between the buffer unit and the vaporization unit.

9. The gas phase supply device system according to claim 1, characterized in that: The device system further includes a system liquid leakage detector connected to the raw material supply unit, the raw material pre-control unit and the buffer unit.

10. A vapor deposition device, characterized in that: The vapor deposition device comprises the vapor supply device system according to any one of claims 1 to 9.

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