Cavity cover of epitaxial process reaction chamber, reaction chamber and epitaxial equipment

Abstract

The utility model discloses a cavity cover of an epitaxial process reaction cavity, the reaction cavity and epitaxial equipment, and relates to the field of semiconductor manufacturing equipment. A first through hole allowing a first gas inlet structure to penetrate through is formed in the center of the cavity cover, the first gas inlet structure is used for introducing reaction gas into the reaction cavity, the cavity cover is provided with a second gas inlet structure around the first through hole, and the second gas inlet structure comprises a plurality of carrier gas output pieces capable of independently feeding gas; each carrier gas output piece is provided with a gas uniformizing assembly, and carrier gas sprayed out after the second gas inlet structure is uniformized by the gas uniformizing assemblies can press down at least part of reaction gas sprayed out by the second gas inlet structure. According to the invention, the carrier gas is homogenized through the gas homogenizing assembly of the carrier gas output part, and then the carrier gas is used for pressing down and scattering the reaction gas, so that the film growth speed of each area on the wafer tends to be consistent, and the film thickness is more uniform.

Description

Technical Field

[0001] The utility model relates to the field of semiconductor manufacturing equipment, in particular to a chamber cover of an epitaxial process reaction chamber, a reaction chamber and epitaxial equipment. Background Art

[0002] The epitaxial growth process involves depositing a thin single-crystal layer on a single-crystal substrate. This newly deposited single-crystal layer is called an epitaxial layer or film. There are two main types of epitaxial growth processes: homoepitaxial and heteroepitaxial. Homoepitaxial growth involves growing the same material on the same type of substrate. The resulting epitaxial layer and the substrate have identical lattice structures. Heterepitaxial growth involves growing one material on a substrate of another. In this case, the lattice structures of the epitaxially grown layer and the substrate may differ. Epitaxial growth can be used in a variety of chip products, with different types of epitaxial growth being used, including Si epitaxial, SiC epitaxial, GaN epitaxial, and others. Epitaxial growth plays a vital role in semiconductor device manufacturing. However, traditional epitaxial growth processes suffer from uneven airflow within the reaction chamber, resulting in insufficient film thickness uniformity in the final film, making it difficult to meet growing production demands. Utility Model Content

[0003] In order to solve the problem of insufficient uniformity of thin film thickness caused by uneven air flow in the above-mentioned reaction chamber, the first aspect of the present invention provides a chamber cover for an epitaxial process reaction chamber, comprising: a first through hole is provided in the center of the chamber cover for a first air intake structure to pass through, the first air intake structure is used to introduce reaction gas into the reaction chamber, the chamber cover is provided with a second air intake structure around the first through hole, the second air intake structure includes a plurality of carrier gas output parts that can independently intake air, each carrier gas output part is provided with a gas homogenizing component, and the carrier gas ejected from the second air intake structure after being homogenized by the gas homogenizing component can press down at least part of the reaction gas ejected from the second air intake structure.

[0004] Optionally, the carrier gas output member also includes an air inlet channel connected to the air uniforming component, the air uniforming component includes an air uniforming cavity and an air delivery element, the air inlet channel is formed by the upper surface of the cavity cover being recessed inward by a preset distance along the thickness direction of the cavity cover, the air uniforming cavity is arranged below the air inlet channel and connected to the air inlet channel, the air delivery element is embedded in the cavity cover, the air delivery element includes an upper surface covering the air uniforming cavity, the upper surface is provided with an air flow hole that passes through the air delivery element along the thickness direction of the air delivery element, and the upper end of the air flow hole is connected to the air uniforming cavity.

[0005] Optionally, a stepped groove is provided at the bottom of the cavity cover, and the stepped groove includes a gas transmission element mounting groove formed by being recessed inward along the lower surface of the cavity cover, and a uniform gas cavity formed by being contracted inward along the gas transmission element mounting groove, and the width of the gas transmission element mounting groove is greater than the width of the uniform gas cavity.

[0006] Optionally, the air inlet channel is connected to the top of the stepped groove.

[0007] Optionally, the gas transmission element, the gas transmission element installation groove, and the gas uniforming cavity are annular structures and are all in a circular ring shape.

[0008] Optionally, each of the carrier gas output members includes two air inlet channels, and the two air inlet channels are symmetrically arranged about the central axis of the chamber cover.

[0009] Optionally, the gas delivery element is provided with a plurality of evenly distributed air flow holes along the circumference.

[0010] Optionally, the sum of the cross-sectional areas of all the air flow holes of each of the air delivery elements is equal to the sum of the cross-sectional areas of the air inlet channels connected to the air delivery elements.

[0011] The second aspect of the present invention provides a reaction chamber, comprising a chamber cover of the epitaxial process reaction chamber described in any one of the first aspects of the present invention, characterized in that it also includes a reaction chamber, a rotatable base arranged in the reaction chamber and parallel to the chamber cover, and a plurality of wafer carriers distributed circumferentially on the base, the wafer carriers being used to carry the workpiece to be processed, the base being able to rotate with the wafer carrier around the rotation center axis of the base, the wafer carrier being able to rotate around the rotation center axis of the base, the second air intake structure comprising a plurality of air flow holes opened on the bottom surface of the chamber cover facing the reaction chamber and used to spray carrier gas, the air flow holes being evenly arranged on a plurality of concentric circles distributed outward from the rotation center axis of the base, and each of the carrier gas output components comprising the air flow holes on one or more adjacent concentric circles.

[0012] Optionally, the number of the air flow holes on each concentric circle is the same, and all the air flow holes of the second air intake structure are radially distributed along multiple evenly distributed radial directions.

[0013] Optionally, any radius of the surface of the workpiece to be processed is divided into multiple continuous line segments, each of the line segments rotates around the center of the workpiece to be processed to form multiple adjacent non-overlapping concentric areas, each of the areas corresponds to one or more of the carrier gas output elements, and the thin film growth rate of the area of the workpiece to be processed corresponding to the carrier gas output element can be changed by adjusting the carrier gas flow rate of any of the carrier gas output elements.

[0014] Optionally, the width of the second air intake structure is equal to the radius of the workpiece to be processed.

[0015] A third aspect of the present invention provides an epitaxial device, comprising a chamber cover of any epitaxial process reaction chamber described in the first aspect of the present invention.

[0016] The beneficial effects of the present invention are as follows: the chamber cover of the present invention is provided with a second air inlet structure including a plurality of carrier gas output parts, which can press down at least part of the reaction gas ejected by the first air inlet structure, thereby utilizing the carrier gas to at least partially disperse the airflow of the reaction gas, so that the reactants flowing to the surface of the wafer are more uniform, and the thin film growth rate in each area of the wafer is more uniform; at the same time, each carrier gas output part is provided with a gas homogenizing component, and the carrier gas is fully homogenized by the gas homogenizing component, so that the carrier gas introduced into various places in the reaction chamber itself is very uniform, further improving the uniformity of the airflow field in the entire reaction chamber. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The following detailed description of the specific embodiments of the present application in conjunction with the accompanying drawings will make the technical solutions and other beneficial effects of the present application apparent.

[0018] Figure 1 This is a schematic structural diagram of a reaction chamber for an epitaxial process according to an embodiment of the present invention;

[0019] Figure 2 This is an exploded view of a chamber cover of an epitaxial process reaction chamber according to an embodiment of the present invention;

[0020] Figure 3 for Figure 2 A magnified view of point A;

[0021] Figure 4 This is a schematic structural diagram of a chamber cover of an epitaxial process reaction chamber in an embodiment of the present utility model;

[0022] Figure 5 This is a cross-sectional view of a chamber cover of an epitaxial process reaction chamber according to an embodiment of the present invention;

[0023] Figure 6 This is a schematic structural diagram of a chip in an embodiment of the present invention.

[0024] Among them, the accompanying drawings are marked as follows: 100, reaction chamber; 1, chamber cover; 2, reaction chamber; 21, side wall; 3, base; 31, wafer carrier; 32, wafer; 321, outer ring area; 322, middle ring area; 323, inner ring area; 4, first air inlet structure; 5, second air inlet structure; 52, carrier gas output part; 521, inner carrier gas output part; 522, middle carrier gas output part; 523, outer carrier gas output part; 6, air inlet pipeline; 7, rotating device; 9, heating device; 10, first through hole; 11, protrusion; 22, gas delivery element; 23, air inlet channel; 24, stepped groove; 25, air flow hole; 26, gas uniformity component; 28, gas delivery element mounting groove; 29, gas uniformity chamber. DETAILED DESCRIPTION

[0025] In order to better understand the technical content of the present invention, specific embodiments are given and described below with reference to the accompanying drawings.

[0026] Various aspects of the present invention are described in this disclosure with reference to the accompanying drawings, in which many illustrative embodiments are shown. The embodiments of the present disclosure are not necessarily intended to include all aspects of the present invention. It should be understood that the various concepts and embodiments introduced above, as well as those described in more detail below, can be implemented in any of many ways, because the concepts and embodiments disclosed in the present invention are not limited to any embodiment. In addition, some aspects disclosed in the present invention can be used alone or in any appropriate combination with other aspects disclosed in the present invention.

[0027] It should be noted that when an element is referred to as being “connected to” or “disposed on” another element, it may be directly on the other element or indirectly on the other element. When an element is referred to as being “connected to” another element, it may be directly connected to the other element or indirectly connected to the other element.

[0028] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be understood to indicate or imply relative importance or implicitly specify the number of the technical features indicated. Thus, a feature specified as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of this utility model, "plurality" means two or more, unless otherwise specifically defined. "Multiple" means one or more, unless otherwise specifically defined.

[0029] In the description of the present invention, it should be understood that the terms "center", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention.

[0030] In the description of this utility model, it should be noted that, unless otherwise expressly specified or limited, the terms "installed," "connected," and "connected" should be understood in a broad sense. For example, they can refer to fixed connections, detachable connections, or integral connections; mechanical connections or electrical connections; direct connections or indirect connections through an intermediate medium; and can refer to internal communication between two components or the interaction between two components. Those skilled in the art will understand the specific meanings of the above terms in this utility model based on specific circumstances.

[0031] Reference throughout this specification to "one embodiment" or "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the present application. Thus, when the phrases "in one embodiment," "in some embodiments," or "in some embodiments" appear in various places throughout this specification, not all references are to the same embodiment. Furthermore, the particular features, structures, or characteristics may be combined in any suitable manner in one or more embodiments.

[0032] See also Figure 1 Embodiments of the present application provide an epitaxial growth apparatus, comprising a reaction chamber 100, wherein the reaction chamber 100 comprises a reaction chamber 2, a chamber cover 1, and sidewalls 21. The chamber cover 1 and sidewalls 21 together enclose the reaction chamber 100. In some embodiments, a bottom plate (not shown) is provided at the bottom of the reaction chamber 2 relative to the bottom of the chamber cover 1, and the bottom plate seals the reaction chamber 2 from below. It is understood that the chamber cover 1 is the chamber cover 1 of the epitaxial growth process reaction chamber 100.

[0033] In some embodiments, the reaction chamber 100 includes a rotatable base 3, which is arranged parallel to and spaced apart from the chamber cover 1. Optionally, the base 3 is spaced 40 mm to 400 mm apart from the chamber cover 1. The base 3 is used to support a wafer tray 31, which is used to support workpieces to be processed. The workpieces to be processed include wafers 32, wafers, etc. The reaction chamber 100 includes a rotating device 7 disposed at the bottom of the base 3, which can drive the base 3 to rotate.

[0034] In some embodiments, the reaction chamber 100 includes a plurality of wafer trays 31 distributed circumferentially on the base 3, the wafer trays 31 being used to carry the workpiece to be processed, the base 3 being able to rotate with the wafer trays 31 around the rotation center axis c of the base 3, and the wafer trays 31 being able to rotate around the rotation center axis d of the wafer trays 31.

[0035] In one embodiment, a heating device 9 is further provided at the bottom of the base 3. The heating device 9 can be a resistance heating device, an electromagnetic induction heating device, or an RFC heating device, etc. The heating device 9 is used to heat the wafer carrier 31, the workpiece to be processed, and the base 3.

[0036] In some embodiments, the chamber cover 1 is provided with a first through hole 10 in the center thereof for the first air inlet structure 4 to pass through. The first air inlet structure 4 is used to introduce reactant gas into the reaction chamber 100. In some embodiments, the first air inlet structure 4 has a plurality of air outlet holes (not shown) along the circumference thereof. The air outlet holes are used to introduce reactant gas into the surrounding reaction chamber 2.

[0037] The chamber cover 1 is provided with a second gas inlet structure 5 surrounding the first through hole 10. The second gas inlet structure 5 includes a plurality of independently operable carrier gas output elements 52. Each carrier gas output element 52 is provided with a gas homogenizing assembly 26. The carrier gas ejected from the second gas inlet structure 5 after being homogenized by the gas homogenizing assembly 26 can downwardly compress at least a portion of the reaction gas ejected from the first gas inlet structure 4. In some embodiments, the second gas inlet structure 5 includes two independently operable carrier gas output elements 52. In other embodiments, the second gas inlet structure 5 includes three or more independently operable carrier gas output elements 52.

[0038] As can be understood, when the gas is ejected from the first gas inlet structure 4 or the second gas inlet structure 5, it diffuses in all directions along the forward direction. As the gas ejection distance increases, the cross-section of the gas flow becomes wider and wider. The edges of the gas flows in the same direction contact each other, eventually forming a continuous gas curtain. Therefore, it is not necessary to have a continuous gas hole. Instead, the gas holes can be arranged at intervals to achieve the effect of using the carrier gas to press down the reaction gas. It should be noted that the reaction gas includes a first precursor gas and a second precursor gas. The first precursor gas is a gas containing a Group V element, such as TCS. TCS (Trichlorosilane) is a chemical substance with the chemical formula SiHCl3, or a gas containing a Group VI element. The second precursor gas is an organic compound containing a Group III element, such as ethylene gas or a Group II element. When the first precursor gas and the second precursor gas are simultaneously introduced into the first gas inlet structure 4, the first precursor gas and the second precursor gas can be separated by a partition (not shown) and ejected through different gas outlets. In this way, the first precursor gas and the second precursor gas will not chemically react until they are injected into the reaction chamber 100. It is understood that the first precursor gas and the second precursor gas can be interchangeable. The carrier gas is a gas that does not react with the first precursor gas and the second precursor gas, such as nitrogen, argon, hydrogen, etc.

[0039] In some embodiments, the reaction gas also includes a doping gas, which can be any one of NO, N2O, N2 and other doping gases. The flow rate of the doping gas can be set as needed, for example, it can be 0.5% of the carrier gas flow rate. When the carrier gas is 40SLM, the doping gas is 0.2SLM, and there is no limitation.

[0040] Since the concentration of the reaction gas ejected from the first air inlet structure 4 gradually decreases along the forward direction with the continuous chemical reaction, the film growth rate of the wafer on the side closest to the first air inlet structure 4 is the highest, and the further away from the first air inlet structure 4, the lower the film growth rate of the wafer. At the same time, since the wafer carrier 31 is continuously rotating with the wafer, the area on the wafer closest to the first air inlet structure 4 will theoretically be repeatedly deposited with more reactants after the reaction of the reaction gas, and the area away from the first air inlet structure 4 will be repeatedly deposited with fewer reactants or even no repeated deposition, making the film growth in various places on the wafer very uneven. The second air inlet structure 5 provided in the reaction chamber 100 of the present invention can press down the reaction gas ejected from the first air inlet structure 4, at least partially disperse the flow of the reaction gas, and make the reactants flowing to the wafer surface more uniform, thereby making the film growth rate of each area on the final wafer more uniform. By using the carrier gas to press down and disperse the reaction gas, on the one hand, it will not destroy the normal reaction of the reaction gas in the preset ratio, and on the other hand, it can accurately adjust the gas flow of the carrier gas output member 52 corresponding to each area according to the film thickness condition on the wafer surface, thereby achieving very precise adjustment.

[0041] See also Figure 2 In some embodiments, the carrier gas output member 52 further includes an air inlet channel 23 connected to the air homogenizing assembly 26. The air homogenizing assembly 26 includes an air homogenizing cavity 29 and an air delivery element 22. The air inlet channel 23 is formed by the upper surface of the chamber cover 1 being recessed inward by a preset distance along the thickness direction of the chamber cover 1. The air homogenizing cavity 29 is disposed within the chamber cover 1 and is connected to the air inlet channel 23 above the air homogenizing cavity 29. The air homogenizing cavity 29 has a cavity that is continuous on a horizontal plane. The air delivery element 22 is embedded within the chamber cover 1. In some embodiments, the air delivery element 22 is flush with the lower bottom surface of the chamber cover 1 after being embedded within the chamber cover 1. The air delivery element 22 includes an upper surface that blocks the air homogenizing cavity 29. The upper surface is provided with an airflow hole 25 that penetrates the air delivery element 22 along the thickness direction of the air delivery element 22. The upper end of the airflow hole 25 is connected to the air homogenizing cavity 29. By inserting the gas delivery element 22 into the chamber cover 1 in an embedded manner, it is very convenient to introduce the carrier gas from the outside through the chamber cover 1 into the reaction chamber 2 while also achieving the gas homogenization function. In addition, the structure is simple and the gas homogenization effect is better. It is understandable that the gas delivery element 22 can be fixedly connected to the chamber cover 1 by welding, abutting, etc. The unevenness of the carrier gas itself will affect the flow and reaction of the reaction gas when it is pressed down. The provision of the gas homogenization component 26 can improve the uniformity of the carrier gas blown to various locations inside the reaction chamber 100, prevent the phenomenon of excessive or insufficient local gas flow, and thus improve the uniformity of the gas flow field in the reaction chamber 100.

[0042] In some embodiments, each carrier gas output member 52 includes one gas delivery element 22. Each gas delivery element 22 has a plurality of gas flow holes 25 evenly distributed along one or more concentric circles thereof. The even distribution mentioned in the present application refers to equal spacing.

[0043] In some embodiments, the second air inlet structure 5 includes a plurality of air flow holes 25 opened on the bottom surface of the chamber cover 1 toward the reaction chamber 2 and used for ejecting carrier gas. The air flow holes 25 are evenly arranged on a plurality of concentric circles distributed outward from the rotation center axis of the base 3, and each of the carrier gas output parts 52 includes the air flow holes 25 on one or more adjacent concentric circles.

[0044] See also Figure 3 、 Figure 5In some embodiments, the bottom of the chamber cover 1 is provided with a stepped groove 24. The stepped groove 24 includes a gas transmission element mounting groove 28 that is recessed inwardly along the lower surface of the chamber cover 1, and a uniform air cavity 29 that is formed by contracting inwardly along the gas transmission element mounting groove 28. The width of the gas transmission element mounting groove 28 is greater than the width of the uniform air cavity 29. Thus, when the gas transmission element 22 is installed in the gas transmission element mounting groove 28, the gas transmission element 22 abuts against the top of the gas transmission element mounting groove 28. At this time, the upper surface of the gas transmission element 22 just covers the bottom of the uniform air cavity 29, forming a nearly closed space in the uniform air cavity 29. At the same time, the airflow in the uniform air cavity 29 can be directed out of the uniform air cavity 29 through the air flow holes 25 provided in the gas transmission element 22 and extending through the upper and lower surfaces of the gas transmission element 22.

[0045] In some embodiments, the width of the uniform air cavity 29 is greater than the diameter of the air inlet channel 23. In this way, the airflow entering the uniform air cavity 29 from the air inlet channel 23 can be better diffused to the surroundings, thereby making the carrier gas distribution more uniform.

[0046] See also Figure 3 In some embodiments, the air inlet channel 23 is connected to the top of the stepped groove 24. Specifically, the bottom of the air inlet channel 23 is connected to the top of the uniform air chamber 29.

[0047] In some embodiments, the gas delivery element 22 and the gas delivery element mounting groove 28 are both annular, and the height, shape, and width of the gas delivery element 22 are the same as those of the gas delivery element mounting groove 28 .

[0048] See also Figure 4 In one embodiment, a protrusion 11 is provided on the bottom surface of the cavity cover 1, and the protrusion 11 protrudes downward relative to the periphery of the cavity cover 1. When the cavity cover 1 is installed on the side wall 21, the protrusion 11 can abut against the side wall 21 from the side, so that the cavity cover 1 can be more firmly installed on the side wall 21.

[0049] In some embodiments, the gas uniformity cavity 29 is annular.

[0050] In some embodiments, the diameter of the air flow hole 25 is smaller than the diameter of the air inlet channel 23. For example, the diameter of the air flow hole 25 is 2-10 mm, and the diameter of the air inlet channel 23 is 5-30 mm.

[0051] In some embodiments, each of the carrier gas output members 52 includes two gas inlet channels 23 , and the two gas inlet channels 23 are symmetrically arranged about the central axis of the chamber cover 1 .

[0052] See also Figure 1In some embodiments, the width of the second gas inlet structure 5 is equal to the radius of the workpiece to be processed. Specifically, the width of the second gas inlet structure 5 refers to the distance between the outermost edge of the second gas inlet structure 5 and the farthest edge of the innermost gas delivery element 22. This configuration can meet the requirements of thin film deposition while simplifying the structure of the carrier gas output element 52.

[0053] In some embodiments, the gas delivery element 22 is provided with a plurality of evenly distributed air flow holes 25 along the circumferential direction. Optionally, 20-100 air flow holes 25 are provided on each concentric circle of the gas delivery element 22. Furthermore, the sum of the cross-sectional areas of all the air flow holes 25 of each of the gas delivery elements 22 is equal to the sum of the cross-sectional areas of the air inlet channels 23 connected to the gas delivery element 22. In this way, it can be ensured that the carrier gas can pass through the carrier gas output element 52 quickly, and even if it passes through the air inlet channel 23 and the gas uniformization component 26, it will not have a significant impact on the flow rate of the carrier gas, and the gas pressure and flow rate are maintained at a relatively stable level. As an example, the diameter of the air flow hole 25 is 4 mm, and each carrier gas output element 52 includes 72 air flow holes 25, then the diameter of the air inlet channel 23 is 24 mm, and each carrier gas output element 52 includes two air inlet channels 23, then the sum of the cross-sectional areas of all the air flow holes 25 of each of the gas delivery elements 22 is approximately 904.32 mm 2 The sum of the cross-sectional areas of the two air inlet channels 23 connected to the air delivery element 22 is approximately 904.32 mm 2 , both are equal.

[0054] In some embodiments, the chamber cover 1 further includes a carrier gas inlet pipe (not shown), which extends into the air inlet channel 23 and communicates with the air inlet channel 23 .

[0055] See also Figure 6 , a radius of the surface of the workpiece to be processed is divided into multiple continuous line segments, and each of the line segments rotates around the center of the workpiece to be processed to form multiple adjacent non-overlapping concentric areas, each of which corresponds to one or more carrier gas output elements 52; by adjusting the carrier gas flow rate of any of the carrier gas output elements 52, the thin film growth rate of the area of the workpiece to be processed corresponding to the carrier gas output element 52 can be changed. It should be noted that one or more carrier gas output elements 52 correspond to one area on the workpiece to be processed, which means that the airflow ejected by each carrier gas output element 52 can affect the thin film growth rate of a specified area on the workpiece to be processed. In some embodiments, it can be understood that the ejected airflow can cover the area on the workpiece to be processed. All areas on the workpiece to be processed have corresponding carrier gas output elements 52, and the thin film growth rate of a specified area can be affected by adjusting the carrier gas flow rate of any carrier gas output element 52.

[0056] In this embodiment, please refer to Figure 2 、 Figure 4 、 Figure 5 The workpiece to be processed is a wafer 32, and the surface of the wafer 32 is divided into an outer ring region 321, a middle ring region 322, and an inner ring region 323 from the outside to the inside. The second gas inlet structure 5 includes three carrier gas output elements 52, from the inside to the outside: an inner carrier gas output element 521 corresponding to the outer ring region 321, a middle carrier gas output element 522 corresponding to the middle ring region 322, and an outer carrier gas output element 523 corresponding to the inner ring region 323. When the gas flow rate of the inner carrier gas output element 521 is increased, the film growth rate in the outer ring region 321 decreases; when the gas flow rate of the middle carrier gas output element 522 is increased, the film growth rate in the middle ring region 322 decreases; when the gas flow rate of the outer carrier gas output element 523 is increased, the film growth rate in the inner ring region 323 decreases. Similarly, when the gas flow rates of the inner carrier gas output element 521, the middle carrier gas output element 522, and the outer carrier gas output element 523 are reduced, the film growth rate of the corresponding surface area of the workpiece to be processed is increased. The carrier gas ejected from the second gas inlet structure 5 can downwardly compress at least a portion of the reactant gas ejected from the first gas inlet structure 4. During the epitaxial growth process, as the wafer carrier 31 and wafer 32 rotate about the central axis d of rotation of the wafer carrier 31, increasing the gas flow rate of any of the carrier gas output elements 52 can reduce the thin film growth rate in the region of the wafer 32 corresponding to the carrier gas output element 52. Reducing the gas flow rate of any of the carrier gas output elements 52 can increase the thin film growth rate in the region of the wafer 32 corresponding to the carrier gas output element 52. It is understood that the lengths of the multiple continuous line segments are not limited. As an example, they can be evenly divided into multiple line segments. For example, a 9 cm radius can be evenly divided into three line segments, each 3 cm long. The coverage area of the corresponding carrier gas output elements 52 also needs to be adjusted so that the gas flow ejected from each carrier gas output element 52 covers the concentric area formed by one line segment rotating around the center of the workpiece.

[0057] In some embodiments, the number of airflow holes 25 on each concentric circle is the same, and all of the airflow holes 25 of the second air intake structure 5 are radially distributed along multiple, uniformly distributed radial directions. Furthermore, when the widths of the regions are all the same, the distance between adjacent airflow holes 25 distributed along different radial directions on different concentric circles is equal to the width of the region.

[0058] In some embodiments, the epitaxial growth apparatus includes an air inlet line 6 and a controller (not shown). Furthermore, each carrier gas output element 52 is individually connected to the air inlet line 6 , which is connected to an external gas source. The air inlet line 6 includes a flow controller electrically connected to the controller, such as an MFC (Mass Flow Controller). The controller controls the individual air inlet flow to each carrier gas output element 52 , i.e., each carrier gas output element 52 can independently supply air, and the flow rates of the carrier gas, the reaction gas (at least one of the first precursor gas and the second precursor gas), and the dopant gas can be controlled as needed. This arrangement can adjust the airflow field in a specified area and improve the uniformity of the film thickness.

[0059] In some embodiments, the controller can be any form of general-purpose computer processor, which can be used in industrial settings to control various chambers and sub-processors. The controller can include one or more components, each of which can include any commands or functions for controlling flow rates, gas valves, gas sources, rotation, movement, heating, cooling, or other processes performed by the various components. For example, it can control robot movement, rotation, gripping, and release operations. The controller can be coupled to various components of the multi-wafer planetary epitaxial apparatus to control their operation. For example, the controller can control the flow / shutoff of gases within the first gas inlet structure 4 and the second gas inlet structure 5, as well as flow rates and flow rates. Specifically, the controller can control the flow / shutoff of gases, flow rates, and flow rates of each gas inlet line 6 connected to the first gas inlet structure 4. It can also control the flow / shutoff of gases, flow rates, and flow rates of each carrier gas output 52 of the second gas inlet structure 5. In some embodiments, the controller includes a central processing unit (CPU), memory, and supporting circuitry. Optionally, the controller is a single-chip microcomputer.

[0060] The chamber cover 1 of the embodiment of the present invention is provided with a second air inlet structure 5 including a plurality of carrier gas output parts 52, which can press down at least part of the reaction gas ejected from the first air inlet structure 4, thereby using the carrier gas to at least partially disperse the airflow of the reaction gas, so that the reactants flowing to the surface of the wafer are more uniform, and the film growth rate of each area of the wafer is more uniform. At the same time, each carrier gas output part 52 is provided with a gas homogenizing component 26, which fully homogenizes the carrier gas through the gas homogenizing component 26, so that the carrier gas introduced into various places in the reaction chamber 100 itself is very uniform, further improving the uniformity of the airflow field in the entire reaction chamber 100. It can be understood that the reaction chamber 100 and / or epitaxial equipment of the embodiment of the present invention all include the chamber cover 1 of the epitaxial process reaction chamber 100 of any of the above-mentioned embodiments, so they also have the above-mentioned technical effects, which will not be repeated.

[0061] In some embodiments, the epitaxial growth device includes the chamber cover 1 of the epitaxial process reaction chamber 100 described in any one of the embodiments.

[0062] The above description is merely a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any changes or substitutions that can be easily conceived by a person skilled in the art within the technical scope disclosed in the present invention should be included in the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be based on the scope of protection of the claims.

Claims

1. A chamber cover for an epitaxial process reaction chamber, characterized in that: A first through hole is provided in the center of the chamber cover for a first air intake structure to pass through, and the first air intake structure is used to introduce reaction gas into the reaction chamber. The chamber cover is provided with a second air intake structure around the first through hole, and the second air intake structure includes a plurality of carrier gas output parts that can independently intake air, and each of the carrier gas output parts is provided with a gas homogenizing component. The carrier gas ejected from the second air intake structure after being homogenized by the gas homogenizing component can press down at least part of the reaction gas ejected from the second air intake structure.

2. The chamber cover of the epitaxial process reaction chamber according to claim 1, characterized in that: The carrier gas output member also includes an air inlet channel connected to the air uniforming component, and the air uniforming component includes an air uniforming cavity and an air delivery element. The air inlet channel is formed by the upper surface of the cavity cover being recessed inward by a preset distance along the thickness direction of the cavity cover. The air uniforming cavity is arranged below the air inlet channel and is connected to the air inlet channel. The air delivery element is embedded in the cavity cover. The air delivery element includes an upper surface that blocks the air uniforming cavity. The upper surface is provided with an air flow hole that penetrates the air delivery element along the thickness direction of the air delivery element, and the upper end of the air flow hole is connected to the air uniforming cavity.

3. The chamber cover of the epitaxial process reaction chamber according to claim 2, characterized in that: A stepped groove is provided at the bottom of the cavity cover, and the stepped groove includes a gas transmission element mounting groove formed inwardly along the lower surface of the cavity cover, and a gas uniforming cavity formed by contracting inwardly along the gas transmission element mounting groove. The width of the gas transmission element mounting groove is greater than the width of the gas uniforming cavity.

4. The chamber cover of the epitaxial process reaction chamber according to claim 3, characterized in that: The air inlet channel is communicated with the top of the stepped groove.

5. The chamber cover of the epitaxial process reaction chamber according to claim 3, characterized in that: The gas transmission element, the gas transmission element installation groove, and the gas uniformity cavity are annular structures and are all in a circular ring shape.

6. The chamber cover of the epitaxial process reaction chamber according to claim 2, wherein: Each of the carrier gas output components includes two gas inlet channels, and the two gas inlet channels are symmetrically arranged about the central axis of the chamber cover.

7. The chamber cover of the epitaxial process reaction chamber according to claim 2, wherein: The gas delivery element is provided with a plurality of evenly distributed air flow holes along the circumference.

8. The chamber cover of the epitaxial process reaction chamber according to claim 2, wherein: The sum of the cross-sectional areas of all the air flow holes of each of the air delivery elements is equal to the sum of the cross-sectional areas of the air inlet channels communicating with the air delivery elements.

9. A reaction chamber comprising the chamber cover of the epitaxial process reaction chamber according to any one of claims 1 to 8, characterized in that: It also includes a reaction chamber, a rotatable base arranged in the reaction chamber and parallel to the chamber cover, and a plurality of wafer disks distributed circumferentially on the base, the wafer disks are used to carry the workpiece to be processed, the base can rotate around the rotation center axis of the base with the wafer disks, the wafer disks can rotate around the rotation center axis of the base, the air flow holes are evenly arranged on a plurality of concentric circles distributed outward from the rotation center axis of the base, and each of the carrier gas output components includes the air flow holes on one or more adjacent concentric circles.

10. The reaction chamber according to claim 9, characterized in that: The number of the air flow holes on each concentric circle is the same, and all the air flow holes of the second air intake structure are radially distributed along multiple evenly distributed radial directions.

11. The reaction chamber according to claim 9, wherein: Any radius of the surface of the workpiece to be processed is divided into multiple continuous line segments, each of which rotates around the center of the workpiece to be processed to form multiple adjacent non-overlapping concentric areas, each of which corresponds to one or more carrier gas output elements. By adjusting the carrier gas flow rate of any carrier gas output element, the thin film growth rate of the area of the workpiece to be processed corresponding to the carrier gas output element can be changed.

12. The reaction chamber according to claim 9, wherein: The width of the second air intake structure is equal to the radius of the workpiece to be processed.

13. An epitaxial device, characterized in that: A chamber cover comprising the epitaxial process reaction chamber according to any one of claims 1-8.

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