Air inlet device of semiconductor processing equipment
By adopting a combined design of the central gas supply pipeline and multiple edge gas supply pipelines in the wafer processing equipment, combined with the mass flow controller, the problem of uneven gas distribution on the wafer surface is solved, and the uniformity optimization of wafer deposition film thickness is achieved.
Patent Information
- Application Number
- CN202422578894.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-24
- Publication Date
- 2025-08-22
- Estimated Expiration
- 2034-10-24
AI Technical Summary
In the prior art, the gas distribution on the wafer surface is uneven, resulting in uneven thickness of the wafer edge deposition film, affecting the etching process effect.
The combined design of the central gas supply pipeline and multiple edge gas supply pipelines is adopted. The gas is supplied separately through the central gas supply pipeline and multiple edge gas supply pipelines, and the gas flow is regulated through the mass flow controller to make the gas on the wafer surface evenly distributed.
The uniform distribution of gas on the wafer surface is achieved, the uniformity of the edge thickness of the deposited film is improved, and the thickness uniformity of the etching process is optimized.
Smart Images
Figure CN223255424U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of semiconductor equipment, in particular to an air intake device for semiconductor processing equipment. Background Art
[0002] During the wafer processing, the etching process refers to the process in which the mixed gas enters the vacuum chamber and is ionized to generate plasma. The generated plasma etches the film layer on the surface of the wafer. Among them, the gas distribution technology in the middle and edge of the wafer is a crucial link in the etching process.
[0003] In the existing technology, there is only one air inlet in the middle of the vacuum chamber, and the distribution of gas entering the vacuum chamber is controlled by adjusting the angle of the air inlet, which leads to uneven gas distribution on the wafer surface and difficult to control the distribution at the edge of the wafer, affecting the uniformity of the deposited film on the wafer.
[0004] Therefore, it is necessary to provide a new air intake device for semiconductor processing equipment to solve the above problems existing in the prior art. Utility Model Content
[0005] The purpose of the utility model is to provide an air intake device for semiconductor processing equipment, which is used to make the gas on the wafer surface uniform during the wafer processing process, can realize the controllable gas in the entire cavity, improve the distribution of the edge thickness of the deposited film on the wafer, and optimize the thickness uniformity.
[0006] To achieve the above purpose, the technical solution of the utility model is as follows:
[0007] An air intake device for semiconductor processing equipment, the semiconductor processing equipment comprising a vacuum chamber, the vacuum chamber having a mounting top wall, wherein the air intake device comprises:
[0008] a central air supply pipeline connected to the mounting top wall and communicating with the vacuum chamber;
[0009] The edge gas supply assembly includes N edge gas supply pipes, wherein the edge gas supply pipes are connected to the edge area of the mounting top wall and communicate with the vacuum chamber, and the N is greater than or equal to 4.
[0010] By adopting the above technical solution, the air intake device includes a central air supply pipeline and multiple edge air supply pipelines, which divides the vacuum chamber into regions. Air is supplied through the central air supply pipeline and multiple edge air supply pipelines respectively. At the same time, the gas flow rates of multiple edge air supply pipelines are consistent, so that the gas on the wafer surface is evenly distributed, thereby improving the distribution of the thickness of the edge of the deposited film on the wafer and optimizing the thickness uniformity.
[0011] Optionally, the edge gas supply assembly also includes a main gas supply channel, and the multiple edge gas supply pipes are all connected to the main gas supply channel. The main gas supply channel is used to connect to a first mass flow controller, and the first mass flow controller is used to control the gas flow of the main gas supply channel.
[0012] By adopting the above technical solution, the main gas supply channel is connected to multiple edge gas supply pipes, and the first mass flow controller is used to control the gas flow of the main gas supply channel. After passing through the main gas supply channel, the gas enters the multiple edge gas supply pipes and then enters the vacuum chamber. There is no need to connect a mass flow controller to each edge gas supply pipe, which simplifies the gas supply process and facilitates the gas supply process in the vacuum chamber.
[0013] Optionally, a connecting pipe is fixedly provided at the end of the main air supply channel, and the connecting pipe includes a main pipe and a first auxiliary pipe. The main air supply channel is connected to the middle of the main pipe, and the end of the main pipe is connected to one end of the first auxiliary pipe.
[0014] By adopting the above technical solution, the gas in the main gas supply channel enters the main pipe and then enters the first auxiliary pipe, and the path of distribution to different edge gas supply pipes through the first auxiliary pipe is the same, so that the gas flow in multiple edge gas supply pipes is the same, which facilitates the uniform spraying of gas in multiple edge gas supply pipes onto the wafer surface.
[0015] Optionally, the edge air supply assembly further includes a first branch and a second branch, one end of the first branch and the second branch are respectively connected to the first auxiliary pipe, and the other ends of the first branch and the second branch are respectively connected to the mounting top wall.
[0016] By adopting the above technical solution, the gas enters the first branch and the second branch respectively, so that the flow rate of the gas entering the vacuum chamber through the first branch and the second branch is the same.
[0017] Optionally, the ventilation length of the first branch is equal to the ventilation length of the second branch.
[0018] By adopting the above technical solution, since the ventilation length of the first branch is equal to the ventilation length of the second branch, the gas passes through the same path in the first branch and the second branch, so that the flow rate of gas entering the vacuum chamber through the first branch and the second branch is the same.
[0019] Optionally, the end of the main air supply channel further includes a second auxiliary pipe, and the other end of the first auxiliary pipe is connected to one end of the second auxiliary pipe.
[0020] By adopting the above technical solution, after the gas enters the first auxiliary pipe, it can enter the second auxiliary pipe, and the second auxiliary pipe is connected to other branches except the first branch and the second branch, which is convenient for increasing the number of branches.
[0021] Optionally, the edge air supply assembly also includes a first branch, a second branch and a third branch. The other end of the first sub-pipe is also connected to one end of the first branch and one end of the second branch. The other end of the second sub-pipe is connected to one end of the third branch, and the third branch is located between the first branch and the second branch. The other ends of the first branch, the second branch and the third branch are respectively connected to the mounting top wall.
[0022] By adopting the above technical solution, the gas can be distributed to different positions of the vacuum chamber through the first branch, the second branch and the third branch. At the same time, the third branch is lower than the first branch and the second branch, and the second auxiliary pipe compensates for the height of the third branch, so that the ventilation lengths in the first branch, the second branch and the third branch are the same.
[0023] Optionally, the ventilation length after the first auxiliary pipe is connected to the first branch, the ventilation length after the first auxiliary pipe is connected to the second branch, and the ventilation length after the first auxiliary pipe, the second auxiliary pipe and the third branch are connected are consistent.
[0024] By adopting the above solution, the ventilation lengths of the three parts are consistent, so the distances that the gas moves in the three parts are the same, which makes it easier for the gas to enter the vacuum chamber evenly.
[0025] Optionally, the air intake device further includes a second mass flow controller, which is connected to the central air supply pipeline to control the gas flow in the central air intake pipeline.
[0026] By adopting the above technical solution, the second mass flow controller is connected to the central gas supply pipeline, which facilitates the control of the gas flow in the central gas inlet pipeline, thereby facilitating the wafer processing process.
[0027] The beneficial effects of the air intake device for semiconductor processing equipment provided by the utility model include at least:
[0028] 1. Multiple edge gas supply pipes divide the vacuum chamber into zones, supplying gas through the central gas supply pipe and multiple edge gas supply pipes respectively. At the same time, the gas flow rate of multiple edge gas supply pipes is consistent, so that the gas is evenly distributed on the wafer surface, improving the distribution of the thickness of the deposited film on the wafer and optimizing the thickness uniformity;
[0029] 2. The ventilation lengths of multiple edge gas supply pipes are the same. The gas flow rate is automatically controlled by the first mass flow controller and the second mass flow controller, thereby regulating the gas distribution in the central area and the edge area of the cavity, achieving consistent gas distribution on the wafer, and thus achieving controllable gas in the entire cavity. BRIEF DESCRIPTION OF THE DRAWINGS
[0030] Figure 1 This is a half-section view of the main structure of an air intake device for semiconductor processing equipment according to an embodiment of the present utility model;
[0031] Figure 2 This is a schematic diagram of the main structure of an air intake device for semiconductor processing equipment according to an embodiment of the present utility model;
[0032] Figure 3 for Figure 2 Enlarged view of part A.
[0033] Reference numerals:
[0034] 100. Vacuum chamber; 110. Mounting top wall; 111. Center through hole; 112. Edge through hole; 120. Processing platform; 200. Center gas supply pipeline; 300. Edge gas supply assembly; 310. Edge gas supply pipeline; 311. Horizontal pipeline; 312. Vertical pipeline; 313. First branch; 314. Second branch; 315. Third branch; 320. Main gas supply channel; 330. Connecting pipe; 331. Main pipe; 332. First auxiliary pipe; 333. Second auxiliary pipe; 400. Supply device; 401. First mass flow controller; 402. Second mass flow controller. DETAILED DESCRIPTION
[0035] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments in the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention. Unless otherwise defined, the technical terms or scientific terms used herein should be the common meanings understood by people with ordinary skills in the field to which the present invention belongs. The words "including" and similar words used in this article mean that the elements or objects appearing before the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects.
[0036] The specific implementation of the present invention will be further described in detail below with reference to the accompanying drawings.
[0037] In a first aspect, an embodiment of the present invention provides an air intake device for a semiconductor processing device, referring to Figure 1 、 Figure 2 and Figure 3, wherein the semiconductor processing equipment includes a vacuum chamber 100, the vacuum chamber 100 has a mounting top wall 110, and the mounting top wall 110 is used to install pipelines to process the wafers in the vacuum chamber 100; the air intake device includes a central air supply pipeline 200, the central air supply pipeline 200 is connected to the mounting top wall 110, and the central air supply pipeline 200 is communicated with the vacuum chamber 100, the central air supply pipeline 200 is placed in the central area of the mounting top wall 110, and the axis of the central air supply pipeline 200 is perpendicular to the mounting top wall 110; at the same time, the air intake device also includes an edge air supply component 300, the edge air supply component 300 includes N edge air supply pipes 310, and the N edge air supply pipes 310 are all connected to the edge area of the mounting top wall 110, and around the axis of the central air supply pipe 200 Uniform distribution, where N is greater than or equal to 4; multiple edge gas supply pipes 310 are all connected to the vacuum chamber 100, and the edge gas supply pipes 310 can be straight pipes or curved pipes, as long as the ventilation path lengths of the multiple edge gas supply pipes 310 are the same. In this embodiment, the edge gas supply pipe 310 is composed of multiple straight pipes, which will be described in detail later. During operation, the wafer is placed in the vacuum chamber 100, so that the wafer and the central gas supply pipe 200 are coaxially arranged, and the edge gas supply pipe 310 and the central gas supply pipe 200 jointly process the wafer, which improves the problem in the prior art that there is only one air inlet in the middle of the vacuum chamber 100, resulting in uneven gas distribution on the wafer surface, and the wafer edge distribution is difficult to control, affecting the uniformity of the deposited film on the wafer, so that the deposited film on the wafer is more uniform.
[0038] Reference Figure 1 、 Figure 2 and Figure 3The edge gas supply assembly 300 also includes a main gas supply channel 320, and multiple edge gas supply pipes 310 are connected to the main gas supply channel 320, and one end of the main gas supply channel 320 is connected and connected to the supply device 400, wherein the supply device 400 includes a first mass flow controller 401 and a second mass flow controller 402, wherein one end of the main gas supply channel 320 is connected to the first mass flow controller 401, the first mass flow controller 401 is used to control the gas flow of the main gas supply channel 320, and is used to supply gas to the edge gas supply pipe 310; one end of the central gas supply pipeline 200 is connected to the second mass flow controller 402 is connected, the second mass flow controller 402 is used to control the gas flow of the main gas supply channel 320; the first mass flow controller 401 provides gas, and the gas enters the multiple edge gas supply pipes 310 after passing through the main gas supply channel 320, and then enters the vacuum chamber 100 for wafer processing. Since the air flow paths of the multiple edge gas supply pipes 310 are the same, and the multiple edge gas supply pipes 310 are supplied with gas by one main gas supply channel 320, the gas in the main gas supply channel 320 passes through the edge gas supply pipe 310 into the vacuum chamber 100 through the same path, which facilitates uniform gas distribution on the wafer surface.
[0039] Reference Figure 1 、 Figure 2 and Figure 3, a connecting pipe 330 is fixedly provided at one end of the main gas supply channel 320 away from the first mass flow controller 401, and the connecting pipe 330 is communicated with the main gas supply channel 320. At the same time, the connecting pipe 330 includes a main pipe 331 and a first sub-pipe 332, wherein the main pipe 331 is horizontally arranged, and the first sub-pipe 332 is vertically arranged, and the first sub-pipe 332 is fixedly arranged at the end of the main pipe 331 and communicated with the main pipe 331. The fixing method can be bonding, welding or integral molding, etc. In this embodiment, the first sub-pipe 332 is preferably connected to the main pipe 331 by integral molding, and the main gas supply channel 320 has a vertical section. The vertical section of the air channel 320 is connected to the middle of the main pipe 331, wherein the main pipe 331 can be one or more. When there are multiple main pipes 331, the multiple main pipes 331 are evenly distributed around the axis of the vertical section of the main air supply channel 320, and the middle parts of the multiple main pipes 331 are connected to the vertical section of the main air supply channel 320, so that the gas from the main air supply channel 320 has the same path to the end of each main pipe 331. The first auxiliary pipe 332 at the end of each main pipe 331 is connected to the edge air supply pipe 310, and the connection method and connection position of the edge air supply pipe 310 connected to each first auxiliary pipe 332 and the first auxiliary pipe 332 are different. The arrangement is the same, that is, each first auxiliary pipe 332 and the edge gas supply pipe 310 connected to the first auxiliary pipe 332 are evenly distributed around the axis of the vertical section of the main gas supply channel 320. In this embodiment, a main pipe 331 is used, and the first auxiliary pipes 332 are fixedly arranged at both ends of the main pipe 331, and the first auxiliary pipes 332 are evenly distributed around the axis of the vertical section of the main gas supply channel 320, that is, the two first auxiliary pipes 332 are symmetrical about the axis of the vertical section of the main gas supply channel 320, so that the path of the gas from the main gas supply channel 320 to the first auxiliary pipe 332 is the same, and multiple edge gas supply pipes 310 are respectively connected and communicated with the two first auxiliary pipes 332, The edge gas supply pipe 310 connected to the first sub-pipe 332 is evenly distributed around the axis of the main gas supply channel 320. Specifically, in this embodiment, the edge gas supply pipes 310 connected to the two first sub-pipes 332 are symmetrically arranged, and the gas path lengths in multiple edge gas supply pipes 310 are the same, so that the gas path from the supply device 400 to each edge gas supply pipe 310 is the same, so that the gas in each edge gas supply pipe 310 can be more evenly distributed to the wafer surface; at the same time, in this embodiment, the first sub-pipes 332 are fixedly provided at both ends of the main pipe 331, so the two first sub-pipes 332 are symmetrical about the main pipe 331.
[0040] Reference Figure 1 、 Figure 2 and Figure 3The edge gas supply pipe 310 includes a horizontal pipe 311 and a vertical pipe 312. The horizontal pipe 311 is connected to the vertical pipe 312, and the horizontal pipe 311 is connected to the first auxiliary pipe 332. The vertical pipe 312 is fixed to the installation top wall 110 and is connected to the interior of the vacuum chamber 100. The fixing method can be bonding, welding, and bolt fixing. In this embodiment, the vertical pipe 312 is preferably fixed to the installation top wall 110 by bolt fixing. At the same time, the axis of the vertical pipe 312 is parallel to the axis of the first auxiliary pipe 332, and the axis of the horizontal pipe 311 is perpendicular to the axis of the first auxiliary pipe 332, so that the gas in the main gas supply channel 320 has the same path to the vacuum chamber 100. At the same time, the vertical pipe 312 and the first sub-pipe 332 are both arranged vertically, and the horizontal pipe 311 is arranged horizontally. During installation, the height of the vertical pipe 312 can be adjusted according to needs. When the height of the vertical pipe 312 changes, the total length of the gas path will not change, that is, when the length of the vertical pipe 312 increases, since the horizontal pipe 311 is arranged horizontally, the vertical height of the first sub-pipe 332 leading to the horizontal pipe 311 is reduced, and the total path length of the gas in the vertical direction does not change. In addition, the horizontal pipe 311 and the vertical pipe 312 have the same cross-sectional area, so that the gas flow rate of each edge gas supply pipe 310 is the same, so that the gas in each edge gas supply pipe 310 can be more evenly distributed to the wafer surface.
[0041] Specifically in this embodiment, the number of edge air supply pipes 310 can be four, six, or other numbers, as long as the edge air supply pipes 310 can be evenly distributed on the installation top wall 110;
[0042] When there are four edge air supply pipes 310, for easy distinction, the two edge air supply pipes 310 on each first sub-pipe 332 are named as the first branch 313 and the second branch 314, respectively. The first branch 313 and the second branch 314 both include a horizontal pipe 311 and a vertical pipe 312. Therefore, the edge air supply assembly 300 includes the first branch 313 and the second branch 314, wherein one end of the first branch 313 and the second branch 314 are respectively connected to the first sub-pipe 332, and one end of the first branch 313 and the second branch 314 are respectively connected to the installation top wall 110. Among them, the ventilation length of the first branch 313 is the same as the ventilation length of the second branch 314. The ventilation length here is the length of the path through which the gas flows in the first branch 313 or the second branch 314. The first branch 313 and the second branch 314 on one first sub-pipe 332 are symmetrically arranged with the first branch 313 and the second branch 314 on the other sub-pipe; that is, when the number of edge gas supply pipes 310 is four, the four edge gas supply pipes 310 are evenly distributed on the installation top wall 110, so that the gas provided by the first mass flow controller 401 can evenly enter the vacuum chamber 100.
[0043] When the number of edge air supply pipes 310 is six, for the sake of easy distinction, the two edge air supply pipes 310 on each first sub-pipe 332 are named as the first branch 313, the second branch 314 and the third branch 315 respectively. The first branch 313, the second branch 314 and the third branch 315 all include a horizontal pipe 311 and a vertical pipe 312; wherein the end of the first sub-pipe 332 is connected to the end of the first branch 313 and the end of the second branch 314; the second sub-pipe 333 is coaxially arranged with the first sub-pipe 332, and the end of the second sub-pipe 333 is connected to the end of the first branch 313 and the end of the second branch 314; The end portion is connected to the end portion of the third branch 315. At the same time, the third branch 315 is arranged between the first branch 313 and the second branch 314. The first branch 313, the second branch 314 and the third branch 315 are all fixedly arranged on the mounting top wall 110. At the same time, the ventilation length after the first auxiliary pipe 332 is connected to the first branch 313, the ventilation length after the first auxiliary pipe 332 is connected to the second branch 314, and the ventilation length after the first auxiliary pipe 332, the second auxiliary pipe 333 and the third branch 315 are connected are consistent, so that the gas can evenly enter the vacuum chamber.
[0044] In addition, there is an angle between the third branch 315 and the first branch 313 and the second branch 314, and the angle can be 30°, 45°, 60°, 90°, 120° or 150°, etc. There is no restriction on the angle here. In actual use, the angle and the specific shapes of the first branch 313, the second branch 314 and the second branch 314 are adjusted according to the working conditions. As long as the two first branches 313, the two second branches 314 and the two third branches 315 are evenly distributed on the installation top wall 110, the gas can enter the vacuum chamber evenly.
[0045] In a second aspect, the embodiment of the present invention further discloses a semiconductor processing device, referring to Figure 1 、 Figure 2 and Figure 3The semiconductor processing equipment includes a supply device 400, a vacuum chamber 100, a processing platform 120 and an air intake device, wherein the supply device 400 includes a first mass flow controller 401 and a second mass flow controller 402, wherein one end of the main gas supply channel 320 is connected to the first mass flow controller 401, and the first mass flow controller 401 is used to control the gas flow of the main gas supply channel 320 and to supply gas to the edge gas supply pipeline 310; one end of the central gas supply pipeline 200 is connected to the second mass flow controller 402, and the second mass flow controller 402 is used to control the gas flow of the main gas supply channel 320; the vacuum chamber 100 is connected to the second mass flow controller 402, and the second mass flow controller 402 is used to control the gas flow of the main gas supply channel 320; The chamber 100 has an installation top wall 110, which is provided with a central through hole 111 and multiple edge through holes 112. The central through hole 111 and the multiple edge through holes 112 both penetrate the installation top wall 110 along the thickness direction of the installation top wall 110. At the same time, the multiple edge through holes 112 are evenly distributed around the axis of the central through hole 111. The central air supply pipe 200 is fixedly arranged on the installation top wall 110 and is connected to the central through hole 111. The multiple edge air supply pipes 310 correspond one-to-one to the positions of the multiple edge through holes 112, and the multiple edge air supply pipes 310 are all fixedly arranged on the installation top wall 110 and are connected to the corresponding edge through holes 112.
[0046] During operation, the gas source supplies gas to the central gas supply pipeline 200 and the main gas supply channel 320. The first mass flow controller 401 and the second mass flow controller 402 in the supply device 400 respectively control the gas flow of the central gas supply pipeline 200 and the main gas supply channel 320. The gas in the central gas supply pipeline 200 is transferred to the interior of the vacuum chamber 100 through the central through hole 111 and sprayed onto the surface of the wafer. The gas in the main gas supply channel 320 is transferred to the interior of the vacuum chamber 100 through the main pipe 331, the first auxiliary pipe 332, and the edge gas supply pipeline 310 and sprayed onto the surface of the wafer. The processing platform 120 is arranged inside the vacuum chamber 100, and the processing platform 120 is used to place the wafer. During the processing, the wafer is placed on the processing platform 120. At this time, the wafer is coaxially arranged with the central through hole 111, so that the gas in the central gas supply pipeline 200 and each edge gas supply pipeline 310 can be more evenly distributed to the wafer surface.
[0047] The implementation principle of the air intake device of a semiconductor processing equipment of the present invention is as follows: a wafer is placed on a processing platform 120 so that the wafer and the central through hole 111 are coaxially arranged, and the supply device 400 is started. The first mass flow controller 401 and the second mass flow controller 402 in the supply device 400 respectively control the gas flow in the central gas supply pipeline 200 and the main gas supply channel 320, wherein the gas in the central gas supply pipeline 200 is transferred to the inside of the vacuum chamber 100 through the central through hole 111 and sprayed onto the surface of the wafer, and the gas in the main gas supply channel 320 is transferred to the vacuum chamber through the main pipe 331, the first auxiliary pipe 332, and the edge gas supply pipeline 310. 100 and sprayed onto the wafer surface; the air intake device regionalizes the vacuum chamber 100, and controls the central air supply pipeline 200 and the main air supply channel 320 through the first mass flow controller 401 and the second mass flow controller 402 respectively. At the same time, the gas flow rates of the six edge air supply pipelines 310 are consistent, so that the gas on the wafer surface is evenly distributed, which improves the distribution of the thickness of the edge of the deposited film on the wafer and optimizes the thickness uniformity. At the same time, the air intake paths of the multiple edge air supply pipelines 310 are the same, and the gas distribution in the central area and the edge area of the cavity is automatically adjusted by the supply device 400 to achieve consistent gas distribution on the wafer, thereby achieving controllable gas in the entire cavity.
[0048] While the embodiments of the present invention have been described in detail above, it will be apparent to those skilled in the art that various modifications and variations may be made to these embodiments. However, it should be understood that such modifications and variations are within the scope and spirit of the present invention as set forth in the claims. Furthermore, the present invention described herein may have other embodiments and may be implemented or carried out in a variety of ways.
Claims
1. An air intake device for a semiconductor processing device, the semiconductor processing device comprising a vacuum chamber (100), the vacuum chamber (100) having a mounting top wall (110), characterized in that: The air intake device comprises: a central air supply pipeline (200), connected to the installation top wall (110) and communicating with the vacuum chamber (100); An edge gas supply assembly (300) comprises N edge gas supply pipes (310), wherein the edge gas supply pipes (310) are connected to the edge area of the mounting top wall (110) and communicate with the vacuum chamber (100), and N is greater than or equal to 4.
2. The air intake device according to claim 1, characterized in that: The edge gas supply assembly (300) further includes a main gas supply channel (320), and the plurality of edge gas supply pipes (310) are all connected to the main gas supply channel (320). The main gas supply channel (320) is used to connect to a first mass flow controller (401), and the first mass flow controller (401) is used to control the gas flow of the main gas supply channel (320).
3. The air intake device according to claim 2, characterized in that: A connecting pipe (330) is fixedly provided at the end of the main air supply channel (320), and the connecting pipe (330) includes a main pipe (331) and a first auxiliary pipe (332). The main air supply channel (320) is connected to the middle of the main pipe (331), and the end of the main pipe (331) is connected to one end of the first auxiliary pipe (332).
4. The air intake device according to claim 3, characterized in that: The edge air supply assembly (300) further comprises a first branch (313) and a second branch (314), wherein one end of the first branch (313) and the second branch (314) are respectively connected to the first auxiliary pipe (332), and the other end of the first branch (313) and the second branch (314) are respectively connected to the mounting top wall (110).
5. The air intake device according to claim 4, characterized in that: The ventilation length of the first branch (313) is equal to the ventilation length of the second branch (314).
6. The air intake device according to claim 3, characterized in that: The end of the main air supply channel (320) further includes a second auxiliary pipe (333), and the other end of the first auxiliary pipe (332) is connected to one end of the second auxiliary pipe (333).
7. The air intake device according to claim 6, characterized in that: The edge air supply assembly (300) further includes a first branch (313), a second branch (314), and a third branch (315); the other end of the first auxiliary pipe (332) is also connected to one end of the first branch (313) and one end of the second branch (314); the other end of the second auxiliary pipe is connected to one end of the third branch (315); and the third branch (315) is located between the first branch (313) and the second branch (314); the other ends of the first branch (313), the second branch (314), and the third branch (315) are respectively connected to the mounting top wall (110).
8. The air intake device according to claim 7, characterized in that: The ventilation length after the first auxiliary pipe (332) is connected to the first branch (313), the ventilation length after the first auxiliary pipe is connected to the second branch (314), and the ventilation length after the first auxiliary pipe, the second auxiliary pipe and the third branch (315) are connected are consistent.
9. The air intake device according to claim 1, characterized in that: The air intake device further comprises a second mass flow controller (402), which is connected to the central air supply pipeline (200) and is used to control the gas flow in the central air supply pipeline (200).