Thermal insulation device for single crystal furnace and crystal pulling system

By adopting the design of insulation components, support components and isolation components in a single crystal furnace, the problem of insufficient high temperature resistance of quartz sheath is solved, efficient insulation and stability of the thermal field are achieved, energy consumption and production costs are reduced, and single crystal growth quality is improved.

CN223255512UActive Publication Date: 2025-08-22SICHUAN GOKIN SOLAR TECHNOLOGY CO LTD +1
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Patent Information

Application Number
CN202422596157.7
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-10-25
Publication Date
2025-08-22
Estimated Expiration
2034-10-25

AI Technical Summary

Technical Problem

The existing quartz sheath has poor high temperature resistance in single crystal furnaces, which leads to serious heat loss after softening, affects the thermal field stability and single crystal growth quality, and is costly.

Method used

The design of insulation components, support components and isolation components is adopted. The support components are used to ensure that the quartz sand is in close contact with the electrode, and the preset gap is sealed through the isolation components to prevent heat loss. The isolation components made of boron nitride insulating material are isolated from impurities, and the support components fix the shape of the quartz sand for reuse.

Benefits of technology

It reduces heat loss at the bottom of the thermal field of the single crystal furnace, improves the insulation effect and stability of the thermal field, reduces energy consumption and production costs, and ensures the uniformity and reliability of the growth of single crystals.

✦ Generated by Eureka AI based on patent content.

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Abstract

The utility model provides a thermal insulation device for a single crystal furnace and a crystal pulling system. The thermal insulation device for the single crystal furnace comprises a thermal insulation assembly, a supporting assembly and an isolation assembly, a first mounting hole is formed in the heat preservation assembly, extends in the first direction and penetrates through the end face, in the first direction, of the heat preservation assembly; the supporting assembly is arranged in the first mounting hole, a second mounting hole is formed in the supporting assembly, and the second mounting hole extends in the first direction and penetrates through the end face, in the first direction, of the supporting assembly; the second mounting hole is used for mounting an electrode, a preset gap is formed between the electrode and the supporting assembly, and the preset gap is used for filling quartz sand; the isolation assembly is arranged on the side, facing the crucible, of the heat preservation assembly and seals the quartz sand in the preset gap. The supporting assembly is utilized to ensure that the shape of the quartz sand is unchanged, the quartz sand is always in close contact with the electrode, and no gap is generated between the quartz sand and the electrode, so that heat loss at the bottom of a single crystal furnace thermal field due to the gap can be reduced, and the thermal insulation effect of the thermal field is improved.
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Description

Technical Field

[0001] The present application relates to a technical field for crystal preparation, and in particular to a heat preservation device for a single crystal furnace and a crystal pulling system. Background Art

[0002] In the thermal field of single crystal furnaces, quartz sheaths have always played an important role as key components. They are mainly used to protect electrodes, prevent sparks between electrodes and surrounding graphite parts, reduce the powdering of bottom soft felt, and reduce single crystal production costs. However, the quartz sheaths commonly used in the market currently have the following shortcomings:

[0003] (1) Poor high temperature resistance. In the high temperature area of ​​the single crystal furnace, the quartz sheath cannot withstand long-term baking. In most cases, it will soften after about 200 hours of baking. However, the current operating time of a single crystal furnace is about 500 hours.

[0004] (2) Softening brings a series of problems. After the quartz sheath softens, the gap around the electrode is large, resulting in serious heat loss at the bottom of the thermal field.

[0005] (3) In order to prevent the softened quartz sheath from causing the electrode to ignite with the graphite parts and solid felt, the electrode holes of the graphite parts and solid felt objects need to be enlarged, which further aggravates the heat loss; the rapid heat loss not only increases the power consumption of the single crystal furnace, but also seriously affects the stability of the thermal field, thereby adversely affecting the growth quality of the single crystal.

[0006] Therefore, there is an urgent need to develop a single crystal furnace insulation device and a crystal pulling system to solve the technical problems existing in the prior art to a certain extent. Utility Model Content

[0007] The purpose of this application is to provide a single crystal furnace insulation device and a crystal pulling system, which reduce the heat loss at the bottom of the thermal field to a certain extent.

[0008] The present application provides a single crystal furnace heat preservation device, which is placed under a crucible; the single crystal furnace heat preservation device includes a heat preservation component, a support component, and an isolation component;

[0009] The thermal insulation component is provided with a first mounting hole, the first mounting hole extending along a first direction and passing through an end surface of the thermal insulation component along the first direction;

[0010] The support assembly is arranged in the first mounting hole, and a second mounting hole is opened on the support assembly, and the second mounting hole extends along the first direction and passes through the end surface of the support assembly along the first direction;

[0011] The second mounting hole is used to mount an electrode, and a preset gap is provided between the electrode and the support assembly, and the preset gap is used to be filled with quartz sand;

[0012] The isolation component is arranged on a side of the heat-insulating component facing the crucible and seals the quartz sand in the preset gap.

[0013] In the above technical solution, further, the support assembly includes a support cylinder;

[0014] The support tube extends along the first direction and is attached to the first mounting hole;

[0015] The preset gap is formed between the supporting cylinder and the electrode.

[0016] In the above technical solution, further, the support cylinder includes a first cylinder body, a second cylinder body and a third cylinder body;

[0017] The first cylinder is arranged on a side of the third cylinder close to the crucible through the second cylinder.

[0018] In the above technical solution, further, the diameter of the first cylinder is greater than the diameter of the third cylinder, and the second cylinder is in a tapered structure along the direction from the crucible to the heat preservation assembly.

[0019] In the above technical solution, further, the isolation assembly includes an isolation cover ring;

[0020] The isolation cover ring is sleeved on the electrode, and the edge of the isolation cover ring is buckled with the first cylinder, so that the isolation cover ring seals the preset gap.

[0021] In the above technical solution, further, the isolation component further includes a limiting protrusion;

[0022] The limiting protrusion is provided on a side of the isolation cover ring facing the preset gap, and the outer diameter of the limiting protrusion is the same as the inner diameter of the first cylinder, so that the isolation cover ring is clamped to the first cylinder through the limiting protrusion.

[0023] In the above technical solution, further, the isolation component is made of boron nitride insulating material.

[0024] In the above technical solution, further, the thermal insulation component includes a thermal insulation soft felt;

[0025] A plurality of the thermal insulation soft felts are provided, and the plurality of the thermal insulation soft felts are arranged in sequence along the first direction.

[0026] In the above technical solution, further, the first mounting hole, the support assembly and the isolation assembly are each provided in plurality;

[0027] The plurality of first mounting holes, the plurality of support components and the plurality of isolation components are respectively arranged in a one-to-one correspondence.

[0028] The present application also provides a crystal pulling system, comprising the above-mentioned single crystal furnace insulation device.

[0029] Compared with the prior art, this application has the following beneficial effects:

[0030] The present application provides a single crystal furnace heat preservation device, which is placed under a crucible; the single crystal furnace heat preservation device includes a heat preservation component, a support component, and an isolation component;

[0031] The thermal insulation component is provided with a first mounting hole, the first mounting hole extending along a first direction and passing through an end surface of the thermal insulation component along the first direction;

[0032] The support assembly is arranged in the first mounting hole, and a second mounting hole is opened on the support assembly, and the second mounting hole extends along the first direction and passes through the end surface of the support assembly along the first direction;

[0033] The second mounting hole is used to mount an electrode, and a preset gap is provided between the electrode and the support assembly, and the preset gap is used to be filled with quartz sand;

[0034] The isolation component is arranged on a side of the heat-insulating component facing the crucible and seals the quartz sand in the preset gap.

[0035] In summary, the present application utilizes a support assembly to ensure that the shape of the quartz sand remains unchanged and is always in close contact with the electrode, and no gap is generated between the quartz sand and the electrode. Therefore, the heat loss at the bottom of the single crystal furnace thermal field due to the gap can be reduced, the thermal insulation effect of the thermal field is improved, and the energy consumption of the single crystal furnace is reduced; in addition, sparks between the electrode and the surrounding graphite parts are avoided, and the stability of the thermal field is enhanced; in addition, the cost of graphite parts is reduced, and the stability of the thermal field is improved. A stable thermal field environment helps to ensure the uniformity and reliability of the single crystal growth process, thereby improving the growth quality and consistency of the single crystal and reducing production costs.

[0036] The present application also provides a crystal pulling system including the above-mentioned crystal pulling device, which has all the beneficial effects of the single crystal furnace insulation device and will not be elaborated in detail here. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] In order to more clearly illustrate the specific implementation methods of the present application or the technical solutions in the prior art, the following is a brief introduction to the drawings required for use in the specific implementation methods or the description of the prior art. Obviously, the drawings described below are some implementation methods of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0038] Figure 1 A schematic diagram of the structure of the heat preservation device for a single crystal furnace provided in this application;

[0039] Figure 2 A cross-sectional view of the heat preservation device for a single crystal furnace provided in this application;

[0040] Figure 3 for Figure 2 A magnified view of point A;

[0041] Figure 4 This is a schematic diagram of the structure of the hidden insulation component in the insulation device for a single crystal furnace provided in this application;

[0042] Figure 5 This is a schematic structural diagram of the support assembly in the single crystal furnace insulation device provided in this application from a first perspective;

[0043] Figure 6 This is a schematic structural diagram of the support assembly in the single crystal furnace insulation device provided in this application from a second viewing angle;

[0044] Figure 7 A cross-sectional view of a support assembly in the single crystal furnace insulation device provided in this application;

[0045] Figure 8 This is a schematic structural diagram of the isolation component in the single crystal furnace insulation device provided in this application from a first perspective;

[0046] Figure 9 This is a schematic structural diagram of the isolation component in the single crystal furnace insulation device provided in this application from a second perspective.

[0047] Figure markings: 1-insulation component; 2-support component; 3-isolation component; 4-first mounting hole; 5-first direction; 6-second mounting hole; 8-electrode; 9-preset gap; 10-quartz sand; 11-support cylinder; 12-first cylinder; 14-second cylinder; 15-third cylinder; 16-isolation cover ring; 18-limiting protrusion. DETAILED DESCRIPTION

[0048] The following detailed description is provided to help the reader gain a comprehensive understanding of the methods, devices, and / or systems described herein. However, various changes, modifications, and equivalents of the methods, devices, and / or systems described herein will be apparent upon understanding the disclosure of this application. For example, the order of operations described herein is merely illustrative and is not limited to the order set forth herein. Rather, except for operations that must occur in a particular order, changes may be made that will be apparent upon understanding the disclosure of this application. Furthermore, descriptions of features known in the art may be omitted for clarity and brevity.

[0049] The features described herein may be implemented in different forms and should not be construed as being limited to the examples described herein. Rather, the examples described herein have been provided merely to illustrate some of the many possible ways to implement the methods, devices, and / or systems described herein that will be apparent upon understanding the disclosure of this application.

[0050] Throughout the specification, when an element (such as a layer, region, or substrate) is described as being “on,” “connected to,” “coupled to,” “over,” or “overlaying” another element, it may be directly “on,” “connected to,” “coupled to,” “over,” or “overlaying” another element, or one or more other elements may be present between them. In contrast, when an element is described as being “directly on,” “directly connected to,” “directly coupled to,” “directly over,” or “directly covering” another element, there may be no other elements intervening therebetween.

[0051] As used herein, the term "and / or" includes any one of the associated listed items and any combination of any two or more items.

[0052] Although terms such as "first," "second," and "third" may be used herein to describe various members, components, regions, layers, or portions, these members, components, regions, layers, or portions are not limited by these terms. Rather, these terms are used only to distinguish one member, component, region, layer, or portion from another member, component, region, layer, or portion. Thus, a first member, component, region, layer, or portion in the examples described herein may also be referred to as a second member, component, region, layer, or portion without departing from the teachings of the examples.

[0053] For ease of description, spatial relational terms such as "above," "upper," "below," and "lower" may be used herein to describe the relationship of one element to another element as shown in the accompanying drawings. Such spatial relational terms are intended to encompass different orientations of the device in use or operation in addition to the orientations depicted in the accompanying drawings. For example, if the device in the accompanying drawings is turned over, an element described as being "above" or "upper" relative to another element would subsequently be "below" or "lower" relative to the other element. Thus, the term "above" includes both the orientations "above" and "below," depending on the spatial orientation of the device. The device may also be positioned in other ways (e.g., rotated 90 degrees or in other orientations), and the spatial relational terms used herein will be interpreted accordingly.

[0054] The terms used herein are intended only to describe various examples and are not intended to limit the present disclosure. Unless the context clearly indicates otherwise, the singular is intended to include the plural. The terms "comprise," "include," and "have" list the presence of stated features, quantities, operations, components, elements, and / or combinations thereof, but do not preclude the presence or addition of one or more other features, quantities, operations, components, elements, and / or combinations thereof.

[0055] Due to manufacturing techniques and / or tolerances, variations in the shapes shown in the drawings may occur. Therefore, the examples described herein are not limited to the specific shapes shown in the drawings but include changes in shapes that occur during manufacturing.

[0056] The features of the examples described herein can be combined in various ways that will be apparent after understanding the disclosure of the present application. In addition, although the examples described herein have various configurations, other configurations are possible as will be apparent after understanding the disclosure of the present application.

[0057] Example 1

[0058] The present application provides a single crystal furnace heat preservation device, which is placed under the crucible; the single crystal furnace heat preservation device reduces the heat loss at the bottom of the thermal field to a certain extent, reduces the energy consumption of the single crystal furnace, avoids sparks between the electrode 8 and the surrounding graphite parts, enhances the stability of the thermal field, and improves the growth quality of the single crystal. Figure 1 -As shown in Figure 9, a heat preservation device for a single crystal furnace provided by the present application is described in detail.

[0059] In this embodiment, the heat preservation device for a single crystal furnace includes a heat preservation component 1 , a support component 2 , and an isolation component 3 .

[0060] Specifically, the heat preservation component 1 is provided with a first mounting hole 4, which extends along the first direction 5 and passes through the end surface of the heat preservation component 1 along the first direction 5; Figure 1 As shown and Figure 1 Taking the placement in the example, the first direction 5 refers to the vertical direction, which is also the vertical direction in the actual crystal pulling process; further, combined with Figure 1 As shown, four first mounting holes 4 are provided on the insulation component 1 , and the four first mounting holes 4 are arranged at equal intervals along the circumferential direction of the insulation component 1 , and the four first mounting holes 4 respectively pass through the upper and lower end surfaces of the insulation component 1 in the vertical direction.

[0061] Specifically, the support assembly 2 is arranged in the first mounting hole 4, and a second mounting hole 6 is opened on the support assembly 2, the second mounting hole 6 extends along the first direction 5 and passes through the end surface of the support assembly 2 along the first direction 5; Figure 2 and Figure 3 As shown, a second mounting hole 6 is provided inside the support assembly 2 , and the side of the second mounting hole 6 facing the crucible can be referred to as an inlet.

[0062] Specifically, the second mounting hole 6 is used to mount the electrode 8. A preset gap 9 is defined between the electrode 8 and the support assembly 2, i.e., the diameter of the second mounting hole 6 is greater than the diameter of the electrode 8. Furthermore, the preset gap 9 is filled with quartz sand 10. The filled quartz sand 10 can effectively reduce heat loss and improve the thermal insulation effect of the thermal field. Furthermore, the quartz sand 10 softens at high temperatures, and the softened quartz sand 10 maintains its shape under the support of the support assembly 2. In other words, the support assembly 2 has a certain solidifying effect on the quartz sand 10, so that the softened quartz sand 10 is always squeezed by the support assembly 2 within the preset gap 9, preventing the quartz sand 10 from moving away from the electrode 8. This ensures close contact between the quartz sand 10 and the electrode 8, and prevents a gap from forming between the electrode 8 and the quartz sand 10 due to the softening of the quartz sand 10. Compared with the prior art, this prevents heat from escaping through the gap to a certain extent.

[0063] In addition, the quartz sand 10 can be reused. After the quartz sand 10 is melted at high temperature, its shape is fixed by the support assembly 2. After a furnace is completed, the temperature inside the furnace drops and the melted quartz sand 10 becomes solid again. After it is removed and cleaned, an appropriate amount of quartz sand 10 can be added to the upper layer (ensuring the filling height of the quartz sand 10) for use in the next furnace.

[0064] In addition, compared with the existing technology, it isolates the entry of conductive impurities such as volatiles, avoids sparks caused by loose connections and insufficient safety distance, and reduces the use cost of graphite parts.

[0065] Specifically, the isolation component 3 is arranged on the side of the heat preservation component 1 facing the crucible and seals the quartz sand 10 in the preset gap 9. Figure 2 and Figure 3 As shown, the isolation component 3 is sleeved with the electrode 8 and covers the inlet, that is, the isolation component 3 seals the preset gap 9 to prevent external impurities from entering the preset gap 9.

[0066] In summary, the present application utilizes the support assembly 2 to ensure that the shape of the quartz sand 10 remains unchanged and is always in close contact with the electrode 8. No gap will be generated between the quartz sand 10 and the electrode 8. Therefore, the heat loss at the bottom of the single crystal furnace thermal field due to the gap can be reduced, the thermal insulation effect of the thermal field is improved, and the energy consumption of the single crystal furnace is reduced; in addition, the electrode 8 is prevented from sparking with the surrounding graphite parts, and the stability of the thermal field is enhanced; in addition, the cost of graphite parts is reduced, and the stability of the thermal field is improved. The stable thermal field environment helps to ensure the uniformity and reliability of the single crystal growth process, thereby improving the growth quality and consistency of the single crystal and reducing production costs.

[0067] In this embodiment, further, combined with Figure 2-Figure 7 As shown, the support assembly 2 includes a support cylinder 11 .

[0068] Specifically, the support tube 11 extends along the first direction 5 and is attached to the first mounting hole 4 . Preferably, the support tube 11 is attached to the first mounting hole 4 of the thermal insulation component 1 by glue.

[0069] Specifically, a preset gap 9 is formed between the support cylinder 11 and the electrode 8. Furthermore, since the support cylinder 11 is cylindrical and the electrode 8 is also cylindrical, the preset gap 9 is an annular structure.

[0070] In this embodiment, further, combined with Figure 2-Figure 7 As shown, the support cylinder 11 includes a first cylinder body 12 , a second cylinder body 14 and a third cylinder body 15 .

[0071] Specifically, the first cylinder 12 is disposed on a side of the third cylinder 15 close to the crucible through the second cylinder 14. That is, the first cylinder 12, the second cylinder 14 and the third cylinder 15 are sequentially connected in a vertical downward direction.

[0072] Furthermore, the diameter of the first barrel 12 is larger than that of the third barrel 15, and the second barrel 14 is tapered from the crucible to the heat preservation assembly 1. This design is currently used to increase the diameter of the inlet, increase the inflow of quartz sand 10, and reduce the time it takes to inject quartz sand 10 into the preset gap 9.

[0073] In this embodiment, further, combined with Figure 2 、 Figure 3 、 Figure 8 as well as Figure 9 As shown, the isolation assembly 3 includes an isolation cover ring 16 .

[0074] Specifically, the isolation cover ring 16 is sleeved on the electrode 8, and its edge is buckled with the first cylinder 12, so that the isolation cover ring 16 seals the preset gap 9. Preferably, the isolation cover ring 16 is annular.

[0075] Furthermore, the isolation assembly 3 also includes a limiting protrusion 18; the limiting protrusion 18 is an annular structure and is arranged on the side of the isolation cover ring 16 facing the preset gap 9 (that is, the limiting protrusion 18 is arranged on the side of the isolation cover ring 16 facing the first cylinder 12), and the outer diameter of the limiting protrusion 18 is the same as the inner diameter of the first cylinder 12.

[0076] In actual use, the isolation assembly 3 can be directly placed on the first cylinder 12 , so that the isolation cover ring 16 can be clamped to the first cylinder 12 through the limiting protrusion 18 .

[0077] Preferably, the isolation component 3 is made of boron nitride insulating material.

[0078] In this embodiment, the thermal insulation assembly 1 further includes a plurality of thermal insulation felts, which are arranged in sequence along the first direction 5. Preferably, the plurality of thermal insulation felts are bonded together using glue.

[0079] In this embodiment, further, combined with Figure 1 As shown, the first mounting holes 4, the supporting components 2 and the isolating components 3 are all provided in plurality; the plurality of first mounting holes 4, the plurality of supporting components 2 and the plurality of isolating components 3 are respectively provided in one-to-one correspondence.

[0080] In this embodiment, the assembly process of the single crystal furnace insulation device is as follows:

[0081] Step 1: Clean the insulation assembly 1 to ensure a clean thermal environment and prepare for subsequent installation steps.

[0082] Step 2: Install the graphite electrode 8 and ensure that the electrode 8 is positioned accurately to provide power support for the normal operation of the single crystal furnace.

[0083] Step 3: Install support tube 11, ensuring that it is aligned with electrode 8 (i.e., the centerline of support tube 11 and electrode 8 are aligned). Support tube 11 isolates quartz sand 10 from other thermal field components and felt, preventing the sand from softening at high temperatures and introducing conductive impurities. It also stabilizes the softened sand 10, ensuring it remains in a regular shape upon removal for easy reuse.

[0084] Step 4: Filling quartz sand 10. The quartz sand 10 is made by crushing quartz stone. This application uses 2-4mm or 80-120 mesh size, and the purity requirement is high-purity quartz to ensure the environment for single crystal growth and avoid affecting its quality.

[0085] Step 5: Install the isolation component 3, which is made of boron nitride insulation material. The function of the isolation component 3 is to isolate the volatiles and conductive impurities from the single crystal furnace from entering the quartz sand 10, avoiding affecting the operation of the single crystal furnace and causing damage to the graphite parts, while ensuring that it can be reused in the next furnace.

[0086] In summary, the present application has the following advantages: (1) significantly enhancing the thermal insulation performance of the bottom of the single crystal furnace and reducing production costs. Compared with the prior art, the support assembly 2 can always ensure that the quartz sand 10 is in contact with the electrode 8, which can effectively reduce heat loss and improve the thermal insulation effect of the thermal field, thereby reducing energy consumption and production costs.

[0087] (2) Significantly improve thermal field stability and enhance the consistency and quality of single crystal growth. The design of the support assembly 2 and the isolation assembly 3 solidifies the quartz sand 10, effectively avoiding thermal field instability caused by problems such as heat loss and sparking of the electrode 8, thereby providing a more stable environment for single crystal growth.

[0088] (3) It successfully avoids sparking caused by loose connections and insufficient safety distance, reducing the cost of using graphite parts. After the quartz sand 10 softens at high temperature, it is fixed in shape by the support assembly 2, isolating the entry of conductive impurities such as volatiles, effectively avoiding the problem of sparking between the electrode 8 and the graphite part, reducing damage to the graphite part and lowering the cost of use.

[0089] (4) The quartz sand 10 can be reused. Compared with the prior art in which the quartz sheath cannot be reused, the quartz sand 10 of the present application can be reused. After a furnace is completed, the temperature in the furnace decreases and the melted quartz sand 10 becomes solid. After being removed and cleaned, an appropriate amount of quartz sand 10 can be added to the upper layer to be used in the furnace, thereby improving resource utilization and reducing production costs.

[0090] Example 2

[0091] The present application also provides a crystal pulling system, comprising the above-mentioned single crystal furnace insulation device.

[0092] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some or all of the technical features therein. These modifications or replacements do not deviate the essence of the corresponding technical solutions from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A heat preservation device for a single crystal furnace, placed under a crucible; characterized in that: The single crystal furnace heat preservation device includes a heat preservation component, a support component and an isolation component; The thermal insulation component is provided with a first mounting hole, the first mounting hole extending along a first direction and passing through an end surface of the thermal insulation component along the first direction; The support assembly is arranged in the first mounting hole, and a second mounting hole is opened on the support assembly, and the second mounting hole extends along the first direction and passes through the end surface of the support assembly along the first direction; The second mounting hole is used to mount an electrode, and a preset gap is provided between the electrode and the support assembly, and the preset gap is used to be filled with quartz sand; The isolation component is arranged on a side of the heat-insulating component facing the crucible and seals the quartz sand in the preset gap.

2. The heat preservation device for a single crystal furnace according to claim 1, characterized in that: The support assembly includes a support cylinder; The support tube extends along the first direction and is attached to the first mounting hole; The preset gap is formed between the supporting cylinder and the electrode.

3. The heat preservation device for a single crystal furnace according to claim 2, characterized in that: The support cylinder includes a first cylinder, a second cylinder and a third cylinder; The first cylinder is arranged on a side of the third cylinder close to the crucible through the second cylinder.

4. The heat preservation device for a single crystal furnace according to claim 3, characterized in that: The diameter of the first cylinder is greater than that of the third cylinder, and the second cylinder is in a tapered structure along a direction from the crucible to the heat preservation assembly.

5. The heat preservation device for a single crystal furnace according to claim 3, characterized in that: The isolation assembly includes an isolation cover ring; The isolation cover ring is sleeved on the electrode, and the edge of the isolation cover ring is buckled with the first cylinder, so that the isolation cover ring seals the preset gap.

6. The heat preservation device for a single crystal furnace according to claim 5, characterized in that: The isolation assembly further includes a limiting protrusion; The limiting protrusion is provided on a side of the isolation cover ring facing the preset gap, and the outer diameter of the limiting protrusion is the same as the inner diameter of the first cylinder, so that the isolation cover ring is clamped to the first cylinder through the limiting protrusion.

7. The heat preservation device for a single crystal furnace according to claim 5, characterized in that: The isolation component is made of boron nitride insulating material.

8. The heat preservation device for a single crystal furnace according to claim 1, characterized in that: The thermal insulation component includes a thermal insulation soft felt; A plurality of the thermal insulation soft felts are provided, and the plurality of the thermal insulation soft felts are arranged in sequence along the first direction.

9. The heat preservation device for a single crystal furnace according to claim 1, characterized in that: There are multiple first mounting holes, multiple support components, and multiple isolation components; The plurality of first mounting holes, the plurality of support components and the plurality of isolation components are respectively arranged in a one-to-one correspondence.

10. A crystal pulling system, characterized in that: The invention comprises the heat preservation device for a single crystal furnace as described in any one of claims 1 to 9.