Device for semiconductor manufacturing process

Abstract

The utility model provides a device for a semiconductor manufacturing process, and relates to the technical field of semiconductor manufacturing, and the device comprises a reaction chamber, a gas inlet pipeline and a particle adsorption assembly. The reaction chamber is used for placing a wafer and providing a reaction space for the wafer; one end of the gas inlet pipeline is communicated with the reaction chamber and used for introducing gas into the reaction chamber, and a first gas valve is arranged at the end, close to the reaction chamber, of the gas inlet pipeline; the particle adsorption assembly is arranged at the end, close to the reaction cavity, of the gas inlet pipeline, the first gas valve is located between the reaction cavity and the particle adsorption assembly, and the particle adsorption assembly is used for adsorbing particle impurities carried by gas. By means of the technical scheme, the particle adsorption assembly can adsorb particle impurities carried by gas in the gas inlet pipeline, metal particles generated by corrosion of corrosive gas to the welding position of the metal pipeline are prevented from entering the reaction cavity, the particle defect on the surface of a wafer is avoided, and the quality and the yield of the wafer are improved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor manufacturing technology, and in particular to a device used in semiconductor manufacturing processes. Background Art

[0002] Epitaxial growth is an important link in the semiconductor industry chain. The quality of epitaxial films directly determines the performance of subsequent devices. With the increasing demand for high-quality semiconductor devices in the industry, high-efficiency and high-quality epitaxial equipment has received more and more attention.

[0003] Epitaxial growth mainly refers to the growth of a high-quality thin film on a substrate. There are many methods to grow epitaxial layers, but the most commonly used method is chemical vapor deposition. Chemical vapor deposition refers to a method in which chemical gases or vapors react on the surface of a substrate to synthesize coatings or nanomaterials; two or more reaction media are introduced into the working space of a heating body, and then they react chemically with each other to form a new material, which is deposited on the surface of the substrate.

[0004] However, existing epitaxial machines widely use metal pipes to transport reactive gases. Since corrosive gases are used in the working space, it is easy to cause corrosion to the welds of the metal pipes, generating metal particles, which in turn affect the chemical vapor deposition process, causing particle defects on the wafer surface, affecting the wafer quality and reducing the wafer yield. Utility Model Content

[0005] The present application mainly provides a device for semiconductor manufacturing process, which is used to solve the technical problems raised in the above background technology, such as particle defects on the wafer surface caused by particle impurities.

[0006] The technical solutions adopted by this application to solve the above technical problems are:

[0007] A device for a semiconductor manufacturing process comprises a reaction chamber, an air intake pipe, and a particle adsorption assembly; the reaction chamber is used to place wafers and provide a reaction space for the wafers; one end of the air intake pipe is connected to the reaction chamber and is used to introduce gas into the reaction chamber, and a first gas valve is provided on the end of the air intake pipe close to the reaction chamber; the particle adsorption assembly is provided at the end of the air intake pipe close to the reaction chamber, and the first gas valve is located between the reaction chamber and the particle adsorption assembly, and the particle adsorption assembly is used to adsorb particulate impurities carried by the gas.

[0008] Optionally, the particle adsorption assembly includes a purge line, an electromagnetic adsorption component and a second air valve; one end of the purge line is connected to the intake line; the electromagnetic adsorption component is arranged at one end of the purge line close to the intake pipe; the second air valve is arranged at one end of the purge line away from the intake line.

[0009] Optionally, the clearing pipeline includes a suction pipeline and a discharge pipeline; the suction pipeline is a conical tube, the end of the suction pipeline with a larger cross-section is connected to the air intake pipeline, and the end of the suction pipeline with a smaller cross-section is connected to the discharge pipeline, and the electromagnetic adsorption component is arranged on the suction pipeline; a second air valve is arranged on the discharge pipeline.

[0010] Optionally, an adsorption plate is provided on the inner wall of the suction pipeline for adsorbing the particulate impurities.

[0011] Optionally, a pressure sensor is provided on the adsorption plate to detect the pressure of the particulate impurities on the adsorption plate.

[0012] Optionally, the device for semiconductor manufacturing process also includes a control unit; the control unit is electrically connected to the first gas valve, the second gas valve, the electromagnetic adsorption component and the pressure sensor respectively; the control unit is used to receive a first pressure value signal sent by the pressure sensor, generate a first valve closing signal, a second valve opening signal and a power-off signal, send the first valve closing signal to the first gas valve to close the first gas valve, send the second valve opening signal to the second gas valve to open the second gas valve, and send the power-off signal to the electromagnetic adsorption component to stop the operation of the electromagnetic adsorption component; the control unit is also used to receive a second pressure value signal sent by the pressure sensor, generate a second valve closing signal, a power-on signal and a first valve opening signal, send the second valve closing signal to the second gas valve to close the second gas valve, send the power-on signal to the electromagnetic adsorption component to start the operation of the electromagnetic adsorption component, and send the first valve opening signal to the first gas valve to open the first gas valve.

[0013] Optionally, the particle adsorption assembly includes an adsorption tube; the adsorption tube is detachably connected to the intake pipe and is used to adsorb the particulate impurities; a third air valve is also provided on the intake pipe, and the adsorption tube is located between the first air valve and the third air valve.

[0014] Optionally, the adsorption tube includes an adsorption layer and a permanent magnetic layer, and the permanent magnetic layer is wrapped around the adsorption layer.

[0015] Optionally, a pressure sensor is provided on the adsorption layer for detecting the pressure of the particulate impurities on the adsorption layer.

[0016] Optionally, the device for semiconductor manufacturing process also includes a control unit; the control unit is electrically connected to the first gas valve, the third gas valve and the pressure sensor respectively; the control unit is used to receive a first pressure value signal sent by the pressure sensor, generate a first valve closing signal and a third valve closing signal, send the first valve closing signal to the first gas valve to close the first gas valve, and send the third valve closing signal to the third gas valve to close the third gas valve; the control unit is also used to receive a second pressure value signal sent by the pressure sensor, generate a first valve opening signal and a third valve opening signal, send the first valve opening signal to the first gas valve to open the first gas valve, and send the third valve opening signal to the third gas valve to open the third gas valve.

[0017] The present application provides a device for semiconductor manufacturing processes. By arranging a particle adsorption component in the air intake pipeline, the particle adsorption component adsorbs particulate impurities carried by the gas in the air intake pipeline, thereby preventing metal particles generated by the corrosion of the metal pipeline welding points by corrosive gas from entering the reaction chamber, avoiding particle defects on the wafer surface, and improving the quality and yield of the wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the technical solution of the present application, the following is a brief introduction to the drawings required for use in the embodiments. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can be obtained based on these drawings without paying any creative work.

[0019] Figure 1 This is a schematic diagram of the structure of the device used in the semiconductor manufacturing process of this application Figure 1 ;

[0020] Figure 2 This is a schematic diagram of the structure of the device used in the semiconductor manufacturing process of this application Figure 2 ;

[0021] Figure 3 This is a schematic diagram of the structure of the adsorption tube of this application.

[0022] Icons: 10-reaction chamber; 20-air inlet pipe; 21-first air valve; 22-third air valve; 30-particle adsorption assembly; 31-clearing pipe; 31a-suction pipe; 31b-discharge pipe; 32-electromagnetic adsorption component; 33-second air valve; 35-adsorption plate; 36-adsorption tube; 36a-adsorption layer; 36b-permanent magnetic layer.

[0023] The realization of the objectives, functional features and advantages of this application will be further explained in conjunction with embodiments and with reference to the accompanying drawings. DETAILED DESCRIPTION

[0024] To make the purpose, technical solutions, and advantages of this application more clear, the technical solutions in the embodiments of this application will be clearly and completely described below in conjunction with the drawings in the embodiments of this application. Obviously, the described embodiments are only part of the embodiments of this application, not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0025] It should be noted that all directional indications in the embodiments of the present application (such as up, down, left, right, front, back, etc.) are only used to explain the relative position relationship, movement status, etc. between the various components under a certain specific posture (as shown in the accompanying drawings). If the specific posture changes, the directional indication will also change accordingly.

[0026] In this application, unless otherwise specified or limited, the terms "connection" and "fixation" should be understood in a broad sense. For example, "fixation" can mean fixed connection, detachable connection, or integration; mechanical connection or electrical connection; direct connection or indirect connection through an intermediate medium; internal communication between two elements or interaction between two elements, unless otherwise specified. For those skilled in the art, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0027] In addition, if there are descriptions involving "first", "second", etc. in the embodiments of the present application, the descriptions of "first", "second", etc. are only for descriptive purposes and cannot be understood as indicating or suggesting their relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of such features. In addition, the meaning of "and / or" appearing throughout the text includes three parallel schemes. Taking "A and / or B" as an example, it includes scheme A, or scheme B, or a scheme in which A and B are satisfied at the same time. In addition, the technical solutions between the various embodiments can be combined with each other, but it must be based on the ability of ordinary technicians in this field to implement it. When the combination of technical solutions is mutually contradictory or cannot be implemented, it should be deemed that such a combination of technical solutions does not exist and is not within the scope of protection required by this application.

[0028] Existing epitaxial growth machines widely use metal pipes to transport reactive gases. Since corrosive gases are used within the workspace, this can easily corrode the welds of the metal pipes, generating metal particles. This, in turn, can affect the chemical vapor deposition process, causing particle defects on the wafer surface, impacting wafer quality and reducing wafer yield. To address these issues, the embodiments of this application provide the following technical solutions to overcome them.

[0029] Please refer to Figure 1 An embodiment of the present application provides a device for a semiconductor manufacturing process, including a reaction chamber 10, an air intake pipe 20, and a particle adsorption assembly 30; the reaction chamber 10 is used to place wafers and provide a reaction space for the wafers; one end of the air intake pipe 20 is connected to the reaction chamber 10, and is used to introduce gas into the reaction chamber 10, and a first gas valve 21 is provided on the end of the air intake pipe 20 close to the reaction chamber 10; the particle adsorption assembly 30 is provided at the end of the air intake pipe 20 close to the reaction chamber 10, and the first gas valve 21 is located between the reaction chamber 10 and the particle adsorption assembly 30, and the particle adsorption assembly 30 is used to adsorb particulate impurities carried by the gas.

[0030] It should be noted that this device is primarily used in wafer epitaxial growth processes. The reaction chamber 10 is used to place wafers and provide the reaction space required for epitaxial growth. An inlet line 20 is responsible for delivering the reaction gas to the reaction chamber 10. A first gas valve 21 is provided at one end near the reaction chamber 10 to control the gas flow. A particle adsorption assembly 30 is provided at the end of the inlet line 20 near the reaction chamber 10, with the first gas valve 21 located between the particle adsorption assembly 30 and the reaction chamber 10. This assembly is used to adsorb particulate impurities carried by the gas, thereby reducing the impact of these impurities on the wafer surface and improving wafer quality and yield.

[0031] The present application provides a device for a semiconductor manufacturing process. By setting a particle adsorption component 30 in the air intake pipeline 20, the particle adsorption component 30 adsorbs particulate impurities carried by the gas in the air intake pipeline 20, thereby preventing metal particles generated by the corrosion of the metal pipeline welding joints by corrosive gas from entering the reaction chamber 10, avoiding particle defects on the wafer surface, and improving the quality and yield of the wafer.

[0032] In an embodiment of the present application, the particle adsorption assembly 30 includes a purge line 31, an electromagnetic adsorption component 32 and a second air valve 33; one end of the purge line 31 is connected to the intake line 20; the electromagnetic adsorption component 32 is arranged at an end of the purge line 31 close to the intake pipe; the second air valve 33 is arranged at an end of the purge line 31 away from the intake line 20.

[0033] Specifically, one end of the purge line 31 is connected to the air inlet line 20, so that the gas passes through the purge line 31 before entering the reaction chamber 10. The electromagnetic adsorption component 32 is arranged at one end of the purge line 31 close to the air inlet line 20, and uses the adsorption effect of the electromagnetic field to capture metal particles in the gas, so that the particulate impurities are adsorbed in the purge line 31, preventing these particles from entering the reaction chamber 10 and being deposited on the wafer. When the adsorbed particulate impurities in the purge line 31 accumulate to a large extent, the first gas valve 21 is closed, and the power to the electromagnetic adsorption component 32 is cut off, and then the second gas valve 33 is opened to allow the adsorbed particulate impurities to be discharged from the purge line 31 along with the air flow. The above-mentioned setting can continuously clean the adsorbed particulate impurities in the purge line 31, further ensuring the adsorption effect of the particulate adsorption component.

[0034] In an embodiment of the present application, the clearing pipeline 31 includes a suction pipeline 31a and a discharge pipeline 31b; the suction pipeline 31a is a conical tube, the end of the suction pipeline 31a with a larger cross-section is connected to the air intake pipeline 20, and the end of the suction pipeline 31a with a smaller cross-section is connected to the discharge pipeline 31b, and the electromagnetic adsorption component 32 is arranged on the suction pipeline 31a; a second air valve 33 is arranged on the discharge pipeline 31b.

[0035] Specifically, the purge line 31 includes an intake line 31a and a discharge line 31b. This design allows gas and particulate impurities to be sucked in through the intake line 31a and then discharged through the discharge line 31b after adsorption treatment. The intake line 31a is a tapered tube, which helps improve the adsorption efficiency of particulate impurities.

[0036] In the embodiment of the present application, an adsorption plate 35 is provided on the inner wall of the suction pipe 31 a for adsorbing the particulate impurities.

[0037] Specifically, an adsorption plate 35 is installed on the inner wall of the suction pipe 31a. This is a component specifically designed to capture and absorb particulate matter. The material and surface properties (such as magnetic or chemical affinity) of the adsorption plate 35 enable it to effectively absorb particulate matter passing through the suction pipe 31a. Furthermore, the adsorption plate 35 prevents particulate matter from damaging the inner wall of the suction pipe 31a, thereby extending the service life of the suction pipe 31a.

[0038] In the embodiment of the present application, a pressure sensor is provided on the adsorption plate 35 for detecting the pressure of the particulate impurities on the adsorption plate 35 .

[0039] Specifically, a pressure sensor is provided on the adsorption plate 35 to monitor the pressure exerted by the impurities on the plate 35 in real time. This monitoring process converts a physical quantity (the pressure exerted by the impurities on the plate 35) into an electrical signal via the pressure sensor, thereby indirectly measuring the amount of impurities on the plate 35. Monitoring by the pressure sensor helps to promptly detect whether the plate 35 is nearing saturation, thereby preventing blockage of the plate 35 due to excessive impurities and ensuring smooth process flow.

[0040] In an embodiment of the present application, the device for a semiconductor manufacturing process further includes a control unit; the control unit is electrically connected to the first gas valve 21, the second gas valve 33, the electromagnetic adsorption component 32 and the pressure sensor respectively; the control unit is used to receive a first pressure value signal sent by the pressure sensor, generate a first valve closing signal, a second valve opening signal and a power-off signal, send the first valve closing signal to the first gas valve 21 to close the first gas valve 21, send the second valve opening signal to the second gas valve 33 to open the second gas valve 33, and send the power-off signal to the electromagnetic adsorption component 32 to stop the electromagnetic adsorption component 32 from working; the control unit is also used to receive a second pressure value signal sent by the pressure sensor, generate a second valve closing signal, a power-on signal and a first valve opening signal, send the second valve closing signal to the second gas valve 33 to close the second gas valve 33, send the power-on signal to the electromagnetic adsorption component 32 to start the electromagnetic adsorption component 32 from working, and send the first valve opening signal to the first gas valve 21 to open the first gas valve 21.

[0041] Specifically, the semiconductor manufacturing device incorporates a control unit electrically connected to the first gas valve 21, the second gas valve 33, the electromagnetic attractor 32, and a pressure sensor, enabling centralized control of key components of the device. The pressure sensor detects the pressure generated by particulate matter on the adsorption plate 35. Based on the pressure signal from the pressure sensor, the control unit generates corresponding control signals to adjust the operating states of the gas valves and the electromagnetic attractor 32.

[0042] When the pressure sensor detects a first pressure value signal, the control unit generates a first valve closing signal and sends it to the first air valve 21 to close the first air valve 21, and at the same time generates a second valve opening signal and sends it to the second air valve 33 to open the second air valve 33, and generates a power-off signal and sends it to the electromagnetic adsorption component 32 to stop its work.

[0043] When the pressure sensor detects a second pressure value signal, the control unit generates a second valve closing signal and sends it to the second air valve 33 to close the second air valve 33, generates a power-on signal and sends it to the electromagnetic adsorption component 32 to start its operation, and generates a first valve opening signal and sends it to the first air valve 21 to open the first air valve 21.

[0044] It should be noted that the control unit manages the gas flow to optimize the adsorption and removal of particulate impurities by controlling the opening and closing of the first gas valve 21 and the second gas valve 33. The electromagnetic adsorption element 32 starts or stops working according to the signal from the control unit to adsorb and remove particulate impurities in the gas.

[0045] Please refer to Figure 2 and Figure 3 In an embodiment of the present application, the particle adsorption component 30 includes an adsorption tube 36; the adsorption tube 36 is detachably connected to the intake pipe 20 for adsorbing the particulate impurities; a third air valve 22 is also provided on the intake pipe 20, and the adsorption tube 36 is located between the first air valve 21 and the third air valve 22.

[0046] Specifically, the adsorption tube 36 is detachably connected to the intake pipe 20. This design allows for quick replacement or cleaning of the adsorption tube 36, facilitating maintenance and operation. The adsorption tube 36 is located between the first and third air valves 21, 22, with these two valves controlling the flow of gas. The first and third air valves 21, 22 work together to control the flow of gas through the adsorption tube 36. When the adsorption tube 36 has absorbed sufficient particulate matter, or when the adsorption tube 36 needs to be replaced, the gas flow can be cut off by closing the third air valve 22 and the first air valve 21 simultaneously, and then the adsorption tube 36 can be cleaned or replaced.

[0047] It is understandable that the detachable connection design between the adsorption tube 36 and the air intake pipe 20 makes the replacement and cleaning of the adsorption tube 36 simple and quick, thereby reducing the maintenance difficulty and cost.

[0048] In the embodiment of the present application, the adsorption tube 36 includes an adsorption layer 36a and a permanent magnetic layer 36b, and the permanent magnetic layer 36b is wrapped around the adsorption layer 36a.

[0049] Specifically, the adsorption tube 36 consists of an adsorption layer 36a and a permanent magnet layer 36b. The adsorption layer 36a is used to capture particulate impurities in the gas, while the permanent magnet layer 36b is wrapped around the adsorption layer 36a and uses its magnetism to enhance its adsorption capacity. The permanent magnet layer 36b generates a magnetic field to attract and fix ferromagnetic particles. When gas flows through the adsorption tube 36, the magnetic force of the permanent magnet layer 36b attracts metal particles in the gas, preventing them from entering the reaction chamber 10 and being deposited on the wafer surface.

[0050] It can be understood that the design of the permanent magnetic layer 36b enhances the adsorption capacity of particulate impurities, making the device more efficient in processing gas and capable of capturing more particles.

[0051] In the embodiment of the present application, a pressure sensor is provided on the adsorption layer 36 a for detecting the pressure of the particulate impurities on the adsorption layer 36 a.

[0052] Specifically, the pressure sensor is used to monitor the pressure exerted by the impurities on the adsorption layer 36a in real time. This monitoring process converts a physical quantity (the pressure exerted by the impurities on the adsorption plate 35) into an electrical signal via the pressure sensor, thereby indirectly measuring the amount of impurities on the adsorption plate 35. This monitoring helps to promptly detect whether the adsorption layer 36a is nearing saturation, thereby preventing clogging of the adsorption layer 36a due to excessive impurities and ensuring smooth process flow.

[0053] In an embodiment of the present application, the device for semiconductor manufacturing process also includes a control unit; the control unit is electrically connected to the first gas valve 21, the third gas valve 22 and the pressure sensor respectively; the control unit is used to receive a first pressure value signal sent by the pressure sensor, generate a first valve closing signal and a third valve closing signal, send the first valve closing signal to the first gas valve 21 to close the first gas valve 21, and send the third valve closing signal to the third gas valve 22 to close the third gas valve 22; the control unit is also used to receive a second pressure value signal sent by the pressure sensor, generate a first valve opening signal and a third valve opening signal, send the first valve opening signal to the first gas valve 21 to open the first gas valve 21, and send the third valve opening signal to the third gas valve 22 to open the third gas valve 22.

[0054] Specifically, the pressure sensor is used to monitor the pressure exerted by particulate impurities on the adsorption layer 36a in real time. When the pressure on the adsorption layer 36a reaches a certain value, the pressure sensor transmits a pressure value signal to the control unit. When the pressure on the adsorption layer 36a reaches a first preset value, the control unit receives the first pressure value signal from the pressure sensor and generates a first valve closing signal and a third valve closing signal, which are sent to the first and third gas valves 21 and 22, respectively, to close these valves and stop the flow of gas to the adsorption tube 36. At this point, the adsorption tube 36 can be cleaned or replaced.

[0055] After the adsorption tube 36 is cleaned or replaced, when the pressure of the adsorption layer 36a drops to the second preset value, the control unit receives the second pressure value signal sent by the pressure sensor, generates a first valve opening signal and a third valve opening signal, and sends them to the first gas valve 21 and the third gas valve 22 respectively to open the two gas valves and restore the gas flow to the adsorption tube 36.

[0056] As can be understood, by controlling the opening and closing of the gas valve, particulate impurities in the gas are effectively removed, the purity of the gas entering the reaction chamber 10 is improved, and particle defects on the wafer surface are reduced. The control unit can automatically adjust the opening and closing of the gas valve based on the feedback signal from the pressure sensor, allowing the device to adapt to different gas compositions and particulate impurity levels.

[0057] The above description is merely a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any changes or substitutions within the technical scope disclosed in the present invention should be included in the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be based on the scope of protection of the claims.

Claims

1. A device for semiconductor manufacturing process, characterized in that, It includes a reaction chamber, an air intake pipe, and a particle adsorption component; The reaction chamber is used to place wafers and provide a reaction space for the wafers; One end of the air inlet pipe is in communication with the reaction chamber for introducing gas into the reaction chamber, and a first air valve is provided on one end of the air inlet pipe close to the reaction chamber; The particle adsorption assembly is arranged at one end of the air inlet pipeline close to the reaction chamber, and the first gas valve is located between the reaction chamber and the particle adsorption assembly. The particle adsorption assembly is used to adsorb particulate impurities carried by the gas.

2. The device for semiconductor manufacturing process according to claim 1, characterized in that The particle adsorption assembly includes a purge pipeline, an electromagnetic adsorption component and a second air valve; One end of the purge pipeline is in communication with the air intake pipeline; The electromagnetic adsorption component is arranged at one end of the cleaning pipeline close to the air intake pipe; The second air valve is arranged at an end of the purge line away from the air intake line.

3. The device for semiconductor manufacturing process according to claim 2, characterized in that The cleaning pipeline includes a suction pipeline and a discharge pipeline; The material suction pipeline is a tapered pipe, the end of the material suction pipeline with a larger cross-section is connected to the air intake pipeline, and the end of the material suction pipeline with a smaller cross-section is connected to the discharge pipeline, and the electromagnetic adsorption component is arranged on the material suction pipeline; A second air valve is provided on the discharge pipeline.

4. The device for semiconductor manufacturing process according to claim 3, characterized in that An adsorption plate is provided on the inner wall of the suction pipeline for adsorbing the particulate impurities.

5. The device for semiconductor manufacturing process according to claim 4, characterized in that: The adsorption plate is provided with a pressure sensor for detecting the pressure of the particulate impurities on the adsorption plate.

6. The device for semiconductor manufacturing process according to claim 5, characterized in that Also included is a control unit; The control unit is electrically connected to the first gas valve, the second gas valve, the electromagnetic adsorption component and the pressure sensor respectively; The control unit is configured to receive a first pressure value signal sent by the pressure sensor, generate a first valve closing signal, a second valve opening signal, and a power-off signal, send the first valve closing signal to the first gas valve to close the first gas valve, send the second valve opening signal to the second gas valve to open the second gas valve, and send the power-off signal to the electromagnetic adsorption component to stop the electromagnetic adsorption component from operating; The control unit is also used to receive a second pressure value signal sent by the pressure sensor, generate a second valve closing signal, a power-on signal and a first valve opening signal, send the second valve closing signal to the second gas valve to close the second gas valve, send the power-on signal to the electromagnetic adsorption component to start the operation of the electromagnetic adsorption component, and send the first valve opening signal to the first gas valve to open the first gas valve.

7. The device for semiconductor manufacturing process according to claim 1, characterized in that The particle adsorption assembly includes an adsorption tube; The adsorption tube is detachably connected to the air intake pipe and is used to adsorb the particulate impurities; A third air valve is further provided on the air intake pipeline, and the adsorption tube is located between the first air valve and the third air valve.

8. The device for semiconductor manufacturing process according to claim 7, characterized in that: The adsorption tube comprises an adsorption layer and a permanent magnetic layer, and the permanent magnetic layer is wrapped outside the adsorption layer.

9. The device for semiconductor manufacturing process according to claim 8, characterized in that The adsorption layer is provided with a pressure sensor for detecting the pressure exerted by the particulate impurities on the adsorption layer.

10. The device for semiconductor manufacturing process according to claim 9, characterized in that: Also included is a control unit; The control unit is electrically connected to the first gas valve, the third gas valve and the pressure sensor respectively; The control unit is configured to receive a first pressure value signal sent by the pressure sensor, generate a first valve closing signal and a third valve closing signal, send the first valve closing signal to the first gas valve to close the first gas valve, and send the third valve closing signal to the third gas valve to close the third gas valve; The control unit is also used to receive a second pressure value signal sent by the pressure sensor, generate a first valve opening signal and a third valve opening signal, send the first valve opening signal to the first gas valve to open the first gas valve, and send the third valve opening signal to the third gas valve to open the third gas valve.

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