Power module and power device with same

Abstract

The utility model provides a power module and a power device with the same, and the power module comprises a first bridge arm which comprises a first substrate and a DC positive polarity terminal; a second leg including a second substrate, a DC negative terminal, and an AC output terminal; the DC positive polarity terminal comprises a first plate section extending in the vertical direction, the DC negative polarity terminal comprises a second plate section extending in the vertical direction, the first plate section and the second plate section are arranged in an overlapped mode in the thickness direction of the first plate section, and the DC positive polarity terminal further comprises a third plate section extending in the transverse direction. The third plate section is located at the end, away from the first substrate, of the first plate section, the DC negative polarity terminal further comprises a fourth plate section extending in the transverse direction, the fourth plate section is located at the end, away from the second substrate, of the second plate section, and the extending direction of the third plate section is opposite to the extending direction of the fourth plate section. Through the technical scheme provided by the invention, the problem that the parasitic inductance of the power device in the related technology is relatively high can be solved.

Description

Technical Field

[0001] The utility model relates to the technical field of power devices, and in particular to a power module and a power device having the same. Background Art

[0002] After decades of development, silicon-based semiconductors have reached their theoretical limits. To achieve higher-performance converters, silicon carbide devices are attracting increasing attention. Silicon carbide has a far greater dielectric breakdown field strength than silicon-based materials and combines high blocking voltage, low on-resistance, and high switching speeds, effectively reducing the power density and operating losses of power devices.

[0003] The development of high-voltage, high-current power semiconductor modules is of great significance because they play a key role in improving the energy efficiency of power systems and reducing carbon emissions. However, it is difficult for a single semiconductor power device to achieve a high voltage and current resistance level. Researchers have met this requirement by connecting multiple silicon carbide devices in series and parallel.

[0004] However, in the related art, power devices have the problem of high parasitic inductance. Utility Model Content

[0005] The utility model provides a power module and a power device having the same, so as to solve the problem of high parasitic inductance of power devices in related technologies.

[0006] According to one aspect of the present invention, a power module is provided, which includes: a first bridge arm, including a first substrate and a DC positive polarity terminal arranged on the first substrate; a second bridge arm, including a second substrate and a DC negative polarity terminal and an AC output terminal arranged on the second substrate; wherein the DC positive polarity terminal and the DC negative polarity terminal are both plate-like structures, the DC positive polarity terminal includes a first plate segment extending in the vertical direction, the DC negative polarity terminal includes a second plate segment extending in the vertical direction, the first plate segment is parallel to the second plate segment, and the first plate segment and the second plate segment are overlapped in the thickness direction of the first plate segment, the DC positive polarity terminal also includes a third plate segment extending in the transverse direction, the third plate segment is located at an end of the first plate segment away from the first substrate, and the DC negative polarity terminal also includes a fourth plate segment extending in the transverse direction, the fourth plate segment is located at an end of the second plate segment away from the second substrate, and the extension direction of the third plate segment is opposite to the extension direction of the fourth plate segment.

[0007] Furthermore, the DC positive terminal also includes a fifth plate segment extending in the transverse direction, the fifth plate segment is located at one end of the first plate segment close to the first substrate, and the DC negative terminal also includes a sixth plate segment extending in the transverse direction, the sixth plate segment is located at one end of the second plate segment close to the second substrate, the extension direction of the fifth plate segment is the same as the extension direction of the sixth plate segment, and the fifth plate segment and the sixth plate segment have an overlapping portion in the vertical direction.

[0008] Furthermore, the DC positive terminal further includes a first lead-out section, which is arranged at an end of the third plate segment away from the first plate segment; and / or the DC negative terminal further includes a second lead-out section, which is arranged at an end of the fourth plate segment away from the second plate segment.

[0009] Furthermore, the DC positive terminal, the DC negative terminal and the AC output terminal are all axisymmetric structures.

[0010] Furthermore, the AC output terminal is a plate-shaped structure, and the AC output terminal includes a first AC plate segment, a second AC plate segment, and a third lead-out segment. The first AC plate segment extends in a vertical direction, the second AC plate segment extends in a horizontal direction, one end of the second AC plate segment is connected to the upper end of the first AC plate segment, and the third lead-out segment is connected to the other end of the second AC plate segment.

[0011] Furthermore, the first bridge arm also includes at least two first parallel MOSFET chips, at least two first parallel diodes and at least two first series diodes, the first parallel MOSFET chips and the first series diodes are both arranged on the first conductive layer of the first substrate, the first parallel diodes are arranged on the second conductive layer of the first substrate, the DC positive polarity terminal is connected to the anode of the first parallel diode, the DC positive polarity terminal is connected to the anode of the first series diode, the drain of the first parallel MOSFET chip is connected to the cathode of the first series diode, and the source of the first parallel MOSFET chip is connected to the anode of the first parallel diode; the second bridge arm also includes at least two second parallel MOSFET chips. An SFET chip, at least two second parallel diodes, and at least two second series diodes, the second parallel MOSFET chip and the second series diode are both arranged on the third conductive layer of the second substrate, the second parallel diode is arranged on the fourth conductive layer of the second substrate, the DC negative polarity terminal is connected to the anode of the second parallel diode, the AC output terminal is connected to the anode of the second series diode, the AC output terminal is connected to the cathode of the second parallel diode, the drain of the second parallel MOSFET chip is connected to the cathode of the second series diode, the source of the second parallel MOSFET chip is connected to the anode of the second parallel diode, and the anode of the first parallel diode is connected to the fourth conductive layer.

[0012] Furthermore, the first parallel MOSFET chip, the first parallel diode, the first series diode, the second parallel MOSFET chip, the second parallel diode and the second series diode are all symmetrically arranged on both sides of the central axis of the power module.

[0013] Furthermore, the conductive layer on the first substrate and the conductive layer on the second substrate are both axisymmetric structures, and the axes of symmetry of the conductive layer on the first substrate and the conductive layer on the second substrate are both central axes of the power module.

[0014] Furthermore, the second conductive layer includes a first conductive segment, a second conductive segment and a third conductive segment. The first conductive segment and the third conductive segment both extend in a direction perpendicular to the central axis of the power module. The two ends of the second conductive segment are respectively connected to the middle of the first conductive segment and the middle of the third conductive segment. The first parallel diode is arranged on the first conductive segment, and the DC positive polarity terminal is arranged on the third conductive segment. A fifth conductive layer is also provided on the first substrate. The fifth conductive layer includes a fourth conductive segment and a fifth conductive segment. The fourth conductive segment extends in a direction perpendicular to the central axis of the power module. One end of the fourth conductive segment extends between the first conductive segment and the third conductive segment. The fifth conductive segment is connected to the other end of the fourth conductive segment. The fifth conductive segment is located at the end of the third conductive segment. The anode of the first parallel diode is connected to the fourth conductive layer through the fifth conductive layer.

[0015] Furthermore, the fourth conductive layer includes a sixth conductive segment, a seventh conductive segment and an eighth conductive segment, the sixth conductive segment and the eighth conductive segment are respectively connected to the two ends of the seventh conductive segment, the seventh conductive segment extends in a direction perpendicular to the central axis of the power module, the second parallel diode is arranged on the seventh conductive segment, two fifth conductive layers are provided on the first substrate, the two fifth conductive layers are respectively located at the two ends of the third conductive segment, the two fifth conductive layers are respectively connected to the sixth conductive segment and the eighth conductive segment, and the AC output terminal is provided on the fourth conductive layer; a sixth conductive layer is also provided on the second substrate, the sixth conductive layer is located in a structure surrounded by the sixth conductive segment, the seventh conductive segment and the eighth conductive segment, and an interlocking step structure is provided between the sixth conductive segment and the eighth conductive segment and the sixth conductive layer, and the DC negative polarity terminal is provided on the sixth conductive layer.

[0016] According to another aspect of the present invention, a power device is provided, and the power device includes the power module provided above.

[0017] Applying the technical solution of the present utility model, the power module includes a first bridge arm and a second bridge arm. The first bridge arm includes a first substrate and a DC positive polarity terminal disposed on the first substrate. The second bridge arm includes a second substrate and a DC negative polarity terminal and an AC output terminal disposed on the second substrate. The DC positive polarity terminal and the DC negative polarity terminal are both plate-like structures. The DC positive polarity terminal includes a first plate segment extending in the vertical direction, and the DC negative polarity terminal includes a second plate segment extending in the vertical direction. The first plate segment is parallel to the second plate segment, and the first plate segment and the second plate segment are overlapped in the thickness direction of the first plate segment. The above structure facilitates the mutual cancellation of the magnetic fields generated by the current between the DC positive polarity terminal and the DC negative polarity terminal when the power module is turned on, thereby achieving the effect of reducing parasitic inductance.

[0018] Furthermore, the DC positive terminal also includes a third plate segment extending in a transverse direction, located at the end of the first plate segment away from the first substrate. The DC negative terminal also includes a fourth plate segment extending in a transverse direction, located at the end of the second plate segment away from the second substrate. The third plate segment extends in a direction opposite to that of the fourth plate segment. This structure increases the gap between the tops of the DC positive and negative terminals, ensuring that the portions of the terminals exposed to air meet insulation requirements. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] The drawings constituting part of this application are provided to provide a further understanding of the present invention. The exemplary embodiments of the present invention and their descriptions are provided to explain the present invention and do not constitute an improper limitation of the present invention. In the drawings:

[0020] Figure 1 A schematic structural diagram of a power device provided by an embodiment of the present utility model is shown;

[0021] Figure 2 Shown Figure 1 Schematic diagram of the structure of the DC positive polarity terminal;

[0022] Figure 3 Shown Figure 1 Schematic diagram of the structure of the DC negative polarity terminal;

[0023] Figure 4 Shown Figure 1 Schematic diagram of the structure of the AC output terminal;

[0024] Figure 5 Shown Figure 1 Schematic diagram of the structure of the first Kelvin source terminal;

[0025] Figure 6 It shows a schematic structural diagram of a power device provided by an embodiment of the present utility model without terminals;

[0026] Figure 7 A schematic structural diagram of the conductive layer of the first bridge arm of the power device provided by an embodiment of the present utility model is shown;

[0027] Figure 8 A schematic structural diagram of the conductive layer of the second bridge arm of the power device provided by an embodiment of the present utility model is shown;

[0028] Figure 9 A cross-sectional view of a power device provided by an embodiment of the present utility model is shown.

[0029] The above drawings include the following reference numerals:

[0030] 1. First Kelvin source terminal; 2. First gate terminal; 6. Second gate terminal; 7. Second Kelvin source terminal;

[0031] 10. First bridge arm; 11. First substrate; 111. First conductive layer; 112. Second conductive layer; 1121. First conductive segment; 1122. Second conductive segment; 1123. Third conductive segment; 113. Fifth conductive layer; 1131. Fourth conductive segment; 1132. Fifth conductive segment; 12. DC positive terminal; 121. First plate segment; 122. Third plate segment; 123. Fifth plate segment; 124. First lead segment; 13. First parallel MOSFET chip; 14. First parallel diode; 15. First series diode;

[0032] 20. Second bridge arm; 21. Second substrate; 211. Third conductive layer; 212. Fourth conductive layer; 2121. Sixth conductive segment; 2122. Seventh conductive segment; 2123. Eighth conductive segment; 213. Sixth conductive layer; 22. DC negative terminal; 221. Second plate segment; 222. Fourth plate segment; 223. Sixth plate segment; 224. Second lead segment; 23. AC output terminal; 231. First AC plate segment; 232. Second AC plate segment; 233. Third lead segment; 24. Second parallel MOSFET chip; 25. Second parallel diode; 26. Second series diode;

[0033] 30. Step structure;

[0034] 41. Copper substrate; 42. DBC lower copper cladding; 43. DBC ceramic plate; 44. DBC upper copper cladding; 45. First solder layer; 46. Second solder layer;

[0035] L. The center axis of the power module. DETAILED DESCRIPTION

[0036] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the embodiments described are only some embodiments of the present invention, not all embodiments. The following description of at least one exemplary embodiment is actually only illustrative and is in no way intended to limit the present invention and its application or use. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0037] like Figures 1 to 9 As shown, an embodiment of the present invention provides a power module, which includes a first bridge arm 10 and a second bridge arm 20. The first bridge arm 10 includes a first substrate 11 and a DC positive terminal 12 provided on the first substrate 11, and the second bridge arm 20 includes a second substrate 21 and a DC negative terminal 22 and an AC output terminal 23 provided on the second substrate 21. Among them, the DC positive polarity terminal 12 and the DC negative polarity terminal 22 are both plate-shaped structures. The DC positive polarity terminal 12 includes a first plate segment 121 extending in the vertical direction, and the DC negative polarity terminal 22 includes a second plate segment 221 extending in the vertical direction. The first plate segment 121 is parallel to the second plate segment 221, and the first plate segment 121 and the second plate segment 221 are overlapped in the thickness direction of the first plate segment 121. The DC positive polarity terminal 12 also includes a third plate segment 122 extending in the transverse direction. The third plate segment 122 is located at the end of the first plate segment 121 away from the first substrate 11. The DC negative polarity terminal 22 also includes a fourth plate segment 222 extending in the transverse direction. The fourth plate segment 222 is located at the end of the second plate segment 221 away from the second substrate 21. The extension direction of the third plate segment 122 is opposite to the extension direction of the fourth plate segment 222.

[0038] In the power module provided by this embodiment, since the first plate segment 121 of the DC positive terminal 12 is parallel to the second plate segment 221 of the DC negative terminal 22, the first plate segment 121 and the second plate segment 221 overlap in the thickness direction of the first plate segment 121. This facilitates the mutual cancellation of the magnetic fields generated by the current between the DC positive terminal 12 and the DC negative terminal 22 when the power module is turned on, thereby reducing parasitic inductance. Furthermore, since the third plate segment 122 of the DC positive terminal 12 and the fourth plate segment 222 of the DC negative terminal 22 extend in opposite directions, the gap between the tops of the DC positive terminal 12 and the DC negative terminal 22 can be increased, thereby ensuring that the portions of the terminals exposed to air meet insulation requirements.

[0039] It should be noted that the direction of the substrate is the horizontal direction. Relative to the horizontal direction, the vertical direction is perpendicular to the horizontal direction or forms an angle within 30 degrees with the vertical direction.

[0040] Furthermore, the first substrate 11 and the second substrate 21 may be an integral structure or a separate structure.

[0041] like Figure 2 and Figure 3 As shown, in this embodiment, the DC positive terminal 12 further includes a fifth plate segment 123 extending in the transverse direction. The fifth plate segment 123 is located at the end of the first plate segment 121 that is close to the first substrate 11. The DC negative terminal 22 further includes a sixth plate segment 223 extending in the transverse direction. The sixth plate segment 223 is located at the end of the second plate segment 221 that is close to the second substrate 21. The fifth plate segment 123 extends in the same direction as the sixth plate segment 223, and the fifth and sixth plate segments 123 and 223 overlap in the vertical direction. This structure can further reduce terminal parasitic inductance.

[0042] like Figure 2 and Figure 3 As shown, in this embodiment, the DC positive terminal 12 further includes a first lead section 124, which is disposed at an end of the third plate section 122 away from the first plate section 121. The DC positive terminal 12 can be connected to other components via the first lead section 124. The DC negative terminal 22 further includes a second lead section 224, which is disposed at an end of the fourth plate section 222 away from the second plate section 221. The DC negative terminal 22 can be connected to other components via the second lead section 224.

[0043] In this embodiment, the DC positive terminal 12 , the DC negative terminal 22 , and the AC output terminal 23 are all axially symmetrical structures, which is beneficial for reducing circuit mismatch and thus reducing current imbalance.

[0044] Specifically, the symmetric axis of the DC positive terminal 12 , the DC negative terminal 22 , and the AC output terminal 23 is the central axis L of the power module.

[0045] like Figure 4 As shown, in this embodiment, the AC output terminal 23 is a plate-shaped structure comprising a first AC plate segment 231, a second AC plate segment 232, and a third lead segment 233. The first AC plate segment 231 extends vertically, while the second AC plate segment 232 extends horizontally. One end of the second AC plate segment 232 is connected to the upper end of the first AC plate segment 231, and the third lead segment 233 is connected to the other end of the second AC plate segment 232. The AC output terminal 23 plays a crucial role in power devices, ensuring stable power supply and safe system operation.

[0046] The above structure offers the following advantages: The large contact area of ​​AC output terminal 23 helps reduce parasitic inductance and the amplitude of voltage and current oscillations during switching transients. The more uniform current distribution at AC output terminal 23 reduces electromagnetic interference. The high mechanical strength of AC output terminal 23 provides better mechanical support and reduces the risk of the terminal loosening or falling off due to vibration or impact.

[0047] like Figure 1 and Figure 6 As shown, in this embodiment, the first bridge arm 10 also includes at least two first parallel MOSFET chips 13, at least two first parallel diodes 14 and at least two first series diodes 15. The first parallel MOSFET chips 13 and the first series diodes 15 are both arranged on the first conductive layer 111 of the first substrate 11, and the first parallel diode 14 is arranged on the second conductive layer 112 of the first substrate 11. The DC positive polarity terminal 12 is connected to the anode of the first parallel diode 14, the DC positive polarity terminal 12 is connected to the anode of the first series diode 15, the drain of the first parallel MOSFET chip 13 is connected to the cathode of the first series diode 15, and the source of the first parallel MOSFET chip 13 is connected to the anode of the first parallel diode 14. The second bridge arm 20 also includes at least two second parallel MOSFET chips 24, at least two second parallel diodes 25, and at least two second series diodes 26. The second parallel MOSFET chips 24 and the second series diodes 26 are both arranged on the third conductive layer 211 of the second substrate 21, and the second parallel diodes 25 are arranged on the fourth conductive layer 212 of the second substrate 21. The DC negative polarity terminal 22 is connected to the anode of the second parallel diode 25, the AC output terminal 23 is connected to the anode of the second series diode 26, the AC output terminal 23 is connected to the cathode of the second parallel diode 25, the drain of the second parallel MOSFET chip 24 is connected to the cathode of the second series diode 26, the source of the second parallel MOSFET chip 24 is connected to the anode of the second parallel diode 25, and the anode of the first parallel diode 14 is connected to the fourth conductive layer 212.

[0048] By connecting SiC MOSFET chips (first parallel MOSFET chip 13 and second parallel MOSFET chip 24) in parallel, the module has a high reverse voltage withstand capability and high current capacity. A half-bridge circuit is formed by connecting SiC MOSFET chips and diode chips (first parallel diode 14 and second parallel diode 25) in parallel. By connecting diode chips (first series diode 15 and second series diode 26) in series with the SiC MOSFET chip drain, the body diode current of the SiC MOSFET chip is suppressed when it is subjected to reverse voltage.

[0049] Specifically, the first bridge arm 10 includes a first substrate 11, eight first parallel MOSFET chips 13, six first parallel diodes 14, two first series diodes 15, a DC positive terminal 12, a first gate terminal 2, a first Kelvin source terminal 1, a drive resistor, and bonding wires. The DC positive terminal 12 is electrically connected to the anode of the first parallel diode 14 via copper cladding. The DC positive terminal 12 is electrically connected to the anode of the first series diode 15 via copper cladding and bonding wires. The drain of the first parallel MOSFET chip 13 is electrically connected to the cathode of the first series diode 15 via copper cladding. The source of the first parallel MOSFET chip 13 is electrically connected to the anode of the first parallel diode 14 via bonding wires. The anode of the first parallel diode 14 is electrically connected to the copper cladding of the second bridge arm 20 via bonding wires and copper cladding. The first Kelvin source terminal 1 is electrically connected to the source of the first parallel MOSFET chip 13 via bonding wires and copper cladding. The first gate terminal 2 is electrically connected to the gate of the first parallel MOSFET chip 13 through a bonding wire and copper cladding.

[0050] Specifically, the second bridge arm 20 includes a second substrate 21, eight second parallel MOSFET chips 24, six second parallel diodes 25, two second series diodes 26, a DC negative terminal 22, an AC output terminal 23, a second gate terminal 6, a second Kelvin source terminal 7, a drive resistor, and bonding wires. The DC negative terminal 22 is electrically connected to the anode of the second parallel diode 25 via copper cladding and bonding wires. The AC output terminal 23 is electrically connected to the anode of the second series diode 26 via copper cladding and bonding wires. The AC output terminal 23 is electrically connected to the cathode of the second parallel diode 25 via copper cladding. The drain of the second parallel MOSFET chip 24 is electrically connected to the cathode of the second series diode 26 via copper cladding. The source of the second parallel MOSFET chip 24 is electrically connected to the anode of the second parallel diode 25 via bonding wires. The second Kelvin source terminal 7 is electrically connected to the source of the second parallel MOSFET chip 24 via bonding wires and copper cladding. The second gate terminal 6 is electrically connected to the gate of the second parallel MOSFET chip 24 through a bonding wire and copper cladding.

[0051] It should be noted that the above-mentioned SiC MOSFET chips (first parallel MOSFET chip 13 and second parallel MOSFET chip 24), diode chips (first parallel diode 14, first series diode 15, second parallel diode 25, second series diode 26), DC positive polarity terminal, DC negative polarity terminal, AC output terminal, and driving resistor are sintered on the upper copper layer of DBC (first substrate and second substrate) through solder.

[0052] The structures of the first Kelvin source terminal 1 , the first gate terminal 2 , the second gate terminal 6 , and the second Kelvin source terminal 7 are all the same.

[0053] In this embodiment, the first parallel MOSFET chip 13, the first parallel diode 14, the first series diode 15, the second parallel MOSFET chip 24, the second parallel diode 25, and the second series diode 26 are all symmetrically arranged on both sides of the central axis of the power module. This structure allows for a more uniform arrangement of components, facilitating heat dissipation.

[0054] In this embodiment, the conductive layer on the first substrate 11 and the conductive layer on the second substrate 21 are both axially symmetrical structures, and the symmetry axes of the conductive layer on the first substrate 11 and the conductive layer on the second substrate 21 are both the central axes of the power module, which is beneficial to reducing circuit mismatch and thus reducing current imbalance.

[0055] Specifically, the upper copper layer of the DBC is designed as a "T"-shaped and "L"-shaped structure, and the upper copper layer and the power terminals are symmetrically arranged about the sub-power module.

[0056] like Figure 7 As shown, the second conductive layer 112 includes a first conductive segment 1121, a second conductive segment 1122, and a third conductive segment 1123. The first conductive segment 1121 and the third conductive segment 1123 both extend in a direction perpendicular to the central axis of the power module. The two ends of the second conductive segment 1122 are respectively connected to the middle of the first conductive segment 1121 and the middle of the third conductive segment 1123. The first parallel diode 14 is disposed on the first conductive segment 1121, and the DC positive terminal 12 is disposed on the third conductive segment 1123. A fifth conductive layer 113 is also provided on the first substrate 11. The fifth conductive layer 113 includes a fourth conductive segment 1131 and a fifth conductive segment 1132. The fourth conductive segment 1131 extends perpendicular to the central axis of the power module. One end of the fourth conductive segment 1131 extends between the first conductive segment 1121 and the third conductive segment 1123. The fifth conductive segment 1132 is connected to the other end of the fourth conductive segment 1131 and is located at the end of the third conductive segment 1123. The anode of the first parallel diode 14 is connected to the fourth conductive layer 212 through the fifth conductive layer 113. This structure ensures that the copper cladding on the DBC of the first bridge arm is symmetrically arranged, which helps reduce circuit mismatch and thus current imbalance.

[0057] like Figure 8As shown, the fourth conductive layer 212 includes a sixth conductive segment 2121, a seventh conductive segment 2122, and an eighth conductive segment 2123. The sixth conductive segment 2121 and the eighth conductive segment 2123 are respectively connected to the two ends of the seventh conductive segment 2122. The seventh conductive segment 2122 extends in a direction perpendicular to the central axis of the power module. The second parallel diode 25 is disposed on the seventh conductive segment 2122. Two fifth conductive layers 113 are disposed on the first substrate 11. The two fifth conductive layers 113 are respectively located at the two ends of the third conductive segment 1123. The two fifth conductive layers 113 are respectively connected to the sixth conductive segment 2121 and the eighth conductive segment 2123. The AC output terminal 23 is disposed on the fourth conductive layer 212. A sixth conductive layer 213 is also provided on the second substrate 21. The sixth conductive layer 213 is located within a structure enclosed by a sixth conductive segment 2121, a seventh conductive segment 2122, and an eighth conductive segment 2123. Step structures 30 are provided between the sixth conductive segment 2121 and the eighth conductive segment 2123 and the sixth conductive layer 213. The DC negative terminal 22 is provided on the sixth conductive layer 213. This structure ensures a symmetrical arrangement of the copper cladding on the DBC upper layer of the second bridge arm, which helps reduce circuit mismatch and thus current imbalance.

[0058] Furthermore, by providing the embedded step structure 30 between the sixth conductive segment 2121 and the eighth conductive segment 2123 and the sixth conductive layer 213 , the step structure 30 can reduce the distance between different conductive segments and increase the mutual inductance between different conductive segments.

[0059] Another embodiment of the present invention provides a power device comprising the power module described above. Thus, when the power module is turned on, this power device can also help offset the magnetic fields generated by the current between the DC positive terminal 12 and the DC negative terminal 22, thereby reducing parasitic inductance. Furthermore, the gap between the tops of the DC positive terminal 12 and the DC negative terminal 22 can be increased, ensuring that the portions of the terminals exposed to air meet insulation requirements.

[0060] The power device includes two identical power modules, which are arranged in parallel.

[0061] like Figure 9 As shown, the power device also includes a copper substrate 41, and the first substrate and the second substrate both include a DBC lower copper clad 42, a DBC ceramic plate 43 and a DBC upper copper clad 44. The copper substrate 41 and the DBC lower copper clad 42 are connected by a first solder layer 45, and the components are connected to the DBC upper copper clad 44 through a second solder layer 46.

[0062] The device provided by the embodiment has the following beneficial effects:

[0063] (1) In order to reduce the parasitic parameters of the terminals in the module and take into account the current carrying capacity and insulation requirements, the DC positive terminal, DC negative terminal, and AC output terminal adopt a "step-type" wide copper plate design: since the first plate segment 121 of the DC positive terminal 12 is parallel to the second plate segment 221 of the DC negative terminal 22, the first plate segment 121 and the second plate segment 221 are overlapped in the thickness direction of the first plate segment 121. When the power module is turned on, the magnetic fields generated by the current between the DC positive terminal 12 and the DC negative terminal 22 offset each other, thereby achieving the effect of reducing parasitic inductance. The extension direction of the fifth plate segment 123 is the same as the extension direction of the sixth plate segment 223. The fifth plate segment 123 and the sixth plate segment 223 have overlapping parts in the vertical direction, which can further reduce the terminal parasitic inductance. Furthermore, since the third plate segment 122 of the DC positive terminal 12 and the fourth plate segment 222 of the DC negative terminal 22 extend in opposite directions, the gap between the tops of the DC positive terminal 12 and the DC negative terminal 22 can be increased, thereby ensuring that the portion of the terminal exposed to the air meets the insulation requirements.

[0064] (2) To reduce circuit mismatch, an axisymmetric layout is used. The SiC MOSFET chip, series diode, and parallel diode in each bridge arm are arranged on both sides of the symmetry axis, making the impedance of the branches on both sides the same and reducing current uneven distribution.

[0065] (3) In order to reduce the DBC parasitic parameters in the module and take into account the current flow capacity, the copper cladding is designed into a "T" and "L" type structure, so that the current flow path remains parallel and in opposite directions, so that the magnetic fields generated by the current cancel each other out and achieve the purpose of reducing parasitic parameters.

[0066] It should be noted that the terms used herein are only for describing specific embodiments and are not intended to limit the exemplary embodiments according to the present application. As used herein, unless the context clearly indicates otherwise, the singular form is also intended to include the plural form. In addition, it should be understood that when the terms "comprise" and / or "include" are used in this specification, they indicate the presence of features, steps, operations, devices, components and / or combinations thereof.

[0067] Unless otherwise specifically stated, the relative arrangement of the parts and steps, numerical expressions and numerical values ​​set forth in these embodiments do not limit the scope of the present invention. At the same time, it should be understood that, for ease of description, the sizes of the various parts shown in the accompanying drawings are not drawn according to actual proportional relationships. The technology, methods and equipment known to those of ordinary skill in the relevant art may not be discussed in detail, but in appropriate cases, the technology, methods and equipment should be considered as part of the specification. In all examples shown and discussed here, any specific value should be interpreted as being merely exemplary, rather than as a limitation. Therefore, other examples of the exemplary embodiments may have different values. It should be noted that similar numbers and letters represent similar items in the following figures, and therefore, once an item is defined in one figure, it does not need to be further discussed in subsequent figures.

[0068] In the description of the present invention, it needs to be understood that the directions or positional relationships indicated by directional words such as "front, back, up, down, left, right", "horizontal, vertical, vertical, horizontal" and "top, bottom" are usually based on the directions or positional relationships shown in the drawings. They are only for the convenience of describing the present invention and simplifying the description. Unless otherwise specified, these directional words do not indicate or imply that the device or element referred to must have a specific direction or be constructed and operated in a specific direction. Therefore, they cannot be understood as limiting the scope of protection of the present invention; the directional words "inside and outside" refer to the inside and outside relative to the outline of each component itself.

[0069] For ease of description, spatially relative terms such as "above", "above", "on the upper surface of", "above", etc. may be used herein to describe the spatial positional relationship of a device or feature to other devices or features as shown in the figures. It should be understood that spatially relative terms are intended to include different orientations of the device in use or operation in addition to the orientation described in the figures. For example, if the device in the drawings is inverted, the device described as "above other devices or structures" or "above other devices or structures" will be positioned as "below other devices or structures" or "below other devices or structures". Thus, the exemplary term "above" can include both "above" and "below". The device can also be positioned in other different ways (rotated 90 degrees or in other orientations), and the spatially relative descriptions used here are interpreted accordingly.

[0070] In addition, it should be noted that the use of words such as "first" and "second" to limit components is only for the convenience of distinguishing the corresponding components. Unless otherwise stated, the above words have no special meaning and therefore cannot be understood as limiting the scope of protection of this utility model.

[0071] The above description is merely a preferred embodiment of the present invention and is not intended to limit the present invention. Those skilled in the art will readily appreciate that the present invention is susceptible to various modifications and variations. Any modifications, equivalent substitutions, or improvements made within the spirit and principles of the present invention shall be included within the scope of protection of the present invention.

Claims

1. A power module, characterized in that: The power module includes: A first bridge arm (10) comprises a first substrate (11) and a DC positive polarity terminal (12) arranged on the first substrate (11); A second bridge arm (20) comprises a second substrate (21) and a DC negative polarity terminal (22) and an AC output terminal (23) arranged on the second substrate (21); The DC positive terminal (12) and the DC negative terminal (22) are both plate-shaped structures. The DC positive terminal (12) includes a first plate segment (121) extending in a vertical direction, and the DC negative terminal (22) includes a second plate segment (221) extending in the vertical direction. The first plate segment (121) is parallel to the second plate segment (221). The first plate segment (121) and the second plate segment (221) are overlapped in the thickness direction of the first plate segment (121). The polarity terminal (12) further comprises a third plate segment (122) extending in a transverse direction, wherein the third plate segment (122) is located at an end of the first plate segment (121) away from the first substrate (11). The DC negative polarity terminal (22) further comprises a fourth plate segment (222) extending in the transverse direction, wherein the fourth plate segment (222) is located at an end of the second plate segment (221) away from the second substrate (21). The extension direction of the third plate segment (122) is opposite to the extension direction of the fourth plate segment (222).

2. The power module according to claim 1, wherein: The DC positive terminal (12) further includes a fifth plate segment (123) extending along the transverse direction, the fifth plate segment (123) being located at one end of the first plate segment (121) close to the first substrate (11), and the DC negative terminal (22) further includes a sixth plate segment (223) extending along the transverse direction, the sixth plate segment (223) being located at one end of the second plate segment (221) close to the second substrate (21), the extension direction of the fifth plate segment (123) being the same as the extension direction of the sixth plate segment (223), and the fifth plate segment (123) and the sixth plate segment (223) having an overlapping portion in the vertical direction.

3. The power module according to claim 1, wherein: The DC positive terminal (12) further comprises a first lead-out section (124), wherein the first lead-out section (124) is arranged at an end of the third plate section (122) away from the first plate section (121); and / or, The DC negative terminal (22) further includes a second lead-out section (224), and the second lead-out section (224) is arranged at an end of the fourth plate section (222) away from the second plate section (221).

4. The power module according to claim 1, wherein: The DC positive terminal (12), the DC negative terminal (22), and the AC output terminal (23) are all axisymmetric structures.

5. The power module according to claim 1, wherein: The AC output terminal (23) is a plate-shaped structure. The AC output terminal (23) comprises a first AC plate segment (231), a second AC plate segment (232), and a third lead-out segment (233). The first AC plate segment (231) extends along the vertical direction, the second AC plate segment (232) extends along the transverse direction, one end of the second AC plate segment (232) is connected to the upper end of the first AC plate segment (231), and the third lead-out segment (233) is connected to the other end of the second AC plate segment (232).

6. The power module according to any one of claims 1 to 5, characterized in that: The first bridge arm (10) further comprises at least two first parallel MOSFET chips (13), at least two first parallel diodes (14) and at least two first series diodes (15); the first parallel MOSFET chips (13) and the first series diodes (15) are both arranged on the first conductive layer (111) of the first substrate (11); the first parallel diodes (14) are arranged on the second conductive layer (112) of the first substrate (11); the DC positive polarity terminal (12) is connected to the anode of the first parallel diode (14); the DC positive polarity terminal (12) is connected to the anode of the first series diode (15); the drain of the first parallel MOSFET chip (13) is connected to the cathode of the first series diode (15); and the source of the first parallel MOSFET chip (13) is connected to the anode of the first parallel diode (14); The second bridge arm (20) further comprises at least two second parallel MOSFET chips (24), at least two second parallel diodes (25), and at least two second series diodes (26); the second parallel MOSFET chips (24) and the second series diodes (26) are both arranged on the third conductive layer (211) of the second substrate (21); the second parallel diodes (25) are arranged on the fourth conductive layer (212) of the second substrate (21); the DC negative polarity terminal (22) is connected to the anode of the second parallel diode (25); the AC output terminal (23) is connected to the anode of the second series diode (26); the AC output terminal (23) is connected to the cathode of the second parallel diode (25); the drain of the second parallel MOSFET chip (24) is connected to the cathode of the second series diode (26); the source of the second parallel MOSFET chip (24) is connected to the anode of the second parallel diode (25); and the anode of the first parallel diode (14) is connected to the fourth conductive layer (212).

7. The power module according to claim 6, characterized in that: The first parallel MOSFET chip (13), the first parallel diode (14), the first series diode (15), the second parallel MOSFET chip (24), the second parallel diode (25) and the second series diode (26) are all symmetrically arranged on both sides of the central axis of the power module.

8. The power module according to claim 6, characterized in that: The conductive layer on the first substrate (11) and the conductive layer on the second substrate (21) are both axisymmetric structures, and the axes of symmetry of the conductive layer on the first substrate (11) and the conductive layer on the second substrate (21) are both central axes of the power module.

9. The power module according to claim 8, characterized in that: The second conductive layer (112) comprises a first conductive segment (1121), a second conductive segment (1122) and a third conductive segment (1123); the first conductive segment (1121) and the third conductive segment (1123) both extend in a direction perpendicular to the central axis of the power module; two ends of the second conductive segment (1122) are respectively connected to the middle of the first conductive segment (1121) and the middle of the third conductive segment (1123); the first parallel diode (14) is arranged on the first conductive segment (1121); and the DC positive terminal (12) is arranged on the third conductive segment (1123); A fifth conductive layer (113) is further provided on the first substrate (11), and the fifth conductive layer (113) comprises a fourth conductive segment (1131) and a fifth conductive segment (1132). The fourth conductive segment (1131) extends in a direction perpendicular to the central axis of the power module. One end of the fourth conductive segment (1131) extends between the first conductive segment (1121) and the third conductive segment (1123). The fifth conductive segment (1132) is connected to the other end of the fourth conductive segment (1131). The fifth conductive segment (1132) is located at the end of the third conductive segment (1123). The anode of the first parallel diode (14) is connected to the fourth conductive layer (212) through the fifth conductive layer (113).

10. The power module according to claim 9, characterized in that: The fourth conductive layer (212) comprises a sixth conductive segment (2121), a seventh conductive segment (2122) and an eighth conductive segment (2123); the sixth conductive segment (2121) and the eighth conductive segment (2123) are respectively connected to two ends of the seventh conductive segment (2122); the seventh conductive segment (2122) extends in a direction perpendicular to the central axis of the power module; the second parallel diode (25) is arranged on the seventh conductive segment (2122); two fifth conductive layers (113) are arranged on the first substrate (11); the two fifth conductive layers (113) are respectively located at two ends of the third conductive segment (1123); the two fifth conductive layers (113) are respectively connected to the sixth conductive segment (2121) and the eighth conductive segment (2123); and the AC output terminal (23) is arranged on the fourth conductive layer (212); A sixth conductive layer (213) is further provided on the second substrate (21); the sixth conductive layer (213) is located within a structure enclosed by the sixth conductive segment (2121), the seventh conductive segment (2122), and the eighth conductive segment (2123); a stepped structure (30) interlocking with the sixth conductive layer (213) is provided between the sixth conductive segment (2121) and the eighth conductive segment (2123); and the DC negative terminal (22) is provided on the sixth conductive layer (213).

11. A power device, characterized in that: The power device comprises the power module according to any one of claims 1 to 9.

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