CMP grinding jig and CMP grinding equipment

Abstract

The embodiment of the utility model provides a CMP grinding jig and CMP grinding equipment, and relates to the technical field of grinding. The CMP grinding jig comprises a base and a wafer containing table, a containing groove is formed in the base, the wafer containing table is movably contained in the containing groove and can ascend and descend relative to the containing groove, the wafer containing table is used for containing a wafer to be ground, a plurality of dirt discharging holes are further formed in the bottom wall of the containing groove and penetrate through the bottom side surface of the base, and the dirt discharging holes are communicated with the bottom side surface of the base. And the discharge port is used for discharging grinding wastewater in the accommodating groove. Compared with the prior art, due to the fact that the containing groove and the sewage discharging hole are additionally formed, grinding waste water in the containing groove can be directly discharged in the actual grinding process, waste water and waste organic matter generated in the grinding process are discharged in time, and waste water and waste metal ions are prevented from being adsorbed.

Description

Technical Field

[0001] The utility model relates to the technical field of grinding, in particular to a CMP grinding jig and CMP grinding equipment. Background Art

[0002] With the rapid development of the semiconductor industry, in the 2.5D packaging process, it is necessary to use chemical grinding to thin the silicon interposer. Specifically, the surface of the interposer is globally flattened by coupling the corrosion of the polishing liquid and the friction of the polishing pad, and then the surface of the silicon interposer is cleaned again. In the wet process, chemical agents (such as hydrofluoric acid, isopropyl ketone, etc.) are required to grind away the polished metal ions and organic chemicals to ensure that the surface of the silicon interposer is free of foreign matter and has good roughness. However, the existing technology can only grind and polish the surface directly, and the waste water and waste metal ions in the grinding process are easily adsorbed on the edge area of ​​the silicon interposer. In the subsequent process, it is easy for the device wiring layer to be invaded by metal ions, resulting in short circuit and failure of product performance. Utility Model Content

[0003] The purpose of the utility model includes providing a CMP grinding jig and a CMP grinding device, which can timely discharge wastewater and waste organic matter generated during grinding, and avoid adsorption of wastewater and waste metal ions.

[0004] The embodiment of the present utility model can be implemented as follows:

[0005] In the first aspect, the utility model provides a CMP grinding jig, comprising a base and a wafer placement table, wherein the base is provided with a receiving groove, the wafer placement table is movably accommodated in the receiving groove, and can be raised and lowered relative to the receiving groove, and the wafer placement table is used to place the wafer to be ground, and the bottom wall of the receiving groove is also provided with a plurality of drainage holes, and the plurality of drainage holes pass through the bottom side surface of the base for discharging the grinding wastewater in the receiving groove.

[0006] In an optional embodiment, a clearance groove is provided in the middle of the bottom wall of the accommodating groove, and a lifting assembly is provided on the bottom side of the wafer placement table. The lifting assembly is at least partially installed in the clearance groove and can drive the wafer placement table to rise and fall relative to the accommodating groove.

[0007] In an optional embodiment, there are multiple drain holes, and the multiple drain holes are evenly distributed around the clearance groove.

[0008] In an optional embodiment, a communication hole is provided in the clearance groove, and the communication hole passes through to the bottom surface of the base.

[0009] In an optional embodiment, the CMP grinding tool further includes an edge grinding ring, which is disposed on the base and surrounds the wafer placement table for fitting onto the edge of the wafer.

[0010] In an optional embodiment, a plurality of lifting shafts are provided on the bottom side of the edge grinding ring, a plurality of lifting holes are provided on the base, the plurality of lifting holes are arranged around the accommodating groove, and the plurality of lifting shafts are accommodated in the plurality of lifting holes one by one for driving the edge grinding ring to rise and fall relative to the base.

[0011] In an optional embodiment, the inner diameter of the edge grinding ring is larger than the outer diameter of the wafer placement table.

[0012] In an optional embodiment, a transition arc surface is provided on the top inner edge of the edge grinding ring, and the transition arc surface is used to fit to the bottom edge of the wafer.

[0013] In an optional embodiment, a top side edge of the accommodating groove is provided with a guide arc surface, and the guide arc surface extends to the edge of the base for guiding the grinding wastewater to the accommodating groove.

[0014] In a second aspect, the present invention provides a CMP polishing device, comprising a chemical polishing wheel and a CMP polishing jig as described in any one of the aforementioned embodiments, wherein the chemical polishing wheel is arranged above the wafer placement table and is used to perform surface polishing on the wafer.

[0015] The beneficial effects of the CMP polishing tool and CMP polishing equipment provided by the embodiments of the utility model include:

[0016] The CMP grinding jig and CMP grinding equipment provided by the present invention have a receiving groove on the base, which movably accommodates the wafer placement table within the receiving groove and can be raised and lowered relative to the receiving groove. The wafer placement table is used to place the wafer to be ground. The bottom wall of the receiving groove is also provided with multiple drainage holes that extend through the bottom surface of the base to drain the grinding wastewater in the receiving groove. Compared to the existing technology, the present invention, by adding the receiving groove and drainage holes, can directly drain the grinding wastewater in the receiving groove during actual grinding, promptly discharging the wastewater and waste organic matter generated during grinding, and preventing the adsorption of wastewater and waste metal ions. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following is a brief introduction to the drawings required for use in the embodiments. It should be understood that the following drawings only illustrate certain embodiments of the present invention and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can be obtained based on these drawings without paying any creative work.

[0018] Figure 1 A schematic diagram of the exploded structure of the CMP polishing tool provided in this embodiment;

[0019] Figure 2 A schematic diagram of the assembly structure of the CMP polishing fixture provided in this embodiment from a first perspective;

[0020] Figure 3 for Figure 2 Schematic diagram of the structure of the middle edge grinding ring;

[0021] Figure 4 A schematic diagram of the assembly structure of the CMP polishing fixture provided in this embodiment from a second viewing angle;

[0022] Figure 5 This is a cross-sectional view of the assembly structure of the CMP polishing tool provided in this embodiment.

[0023] icon:

[0024] 100-CMP grinding fixture; 110-base; 111-accommodating groove; 113-drain hole; 115-yield groove; 117-connecting hole; 119-guide arc surface; 130-wafer placement table; 150-lifting assembly; 170-edge grinding ring; 171-lifting shaft; 173-transition arc surface. DETAILED DESCRIPTION

[0025] Chemical Mechanical Planarization (CMP) is a widely used technique in semiconductor manufacturing for flattening wafer surfaces. CMP combines chemical etching and mechanical lapping to achieve high-precision surface flatness. This technique is particularly important in the manufacture of multi-layer metal interconnect structures because it ensures high uniformity between each layer, thereby improving device performance and reliability.

[0026] During the 2.5D packaging process, chemical polishing is required for thinning. During this polishing process, wastewater and waste metal ions are easily adsorbed on the edge of the silicon interposer. In subsequent manufacturing processes, this can easily cause the device wiring layer to be invaded by free metal ions, leading to short circuits and product failure.

[0027] In order to solve the above problems, the utility model provides a novel CMP grinding tool and CMP grinding equipment.

[0028] To make the purpose, technical solutions, and advantages of the embodiments of the present invention more clear, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Generally, the components of the embodiments of the present invention described and shown in the drawings herein can be arranged and designed in various different configurations.

[0029] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but rather merely represents selected embodiments of the present invention. All other embodiments derived by persons of ordinary skill in the art based on the embodiments of the present invention without creative effort are intended to fall within the scope of protection of the present invention.

[0030] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, it does not need to be further defined or explained in subsequent drawings.

[0031] In the description of the present invention, it should be noted that if the terms "upper", "lower", "inside", "outside", etc. appear, the orientation or position relationship indicated is based on the orientation or position relationship shown in the accompanying drawings, or is the orientation or position relationship in which the utility model product is usually placed when in use. It is only for the convenience of describing the present invention and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, it cannot be understood as a limitation on the present invention.

[0032] In addition, the terms "first", "second", etc., if used, are merely used to distinguish and describe, and should not be understood as indicating or implying relative importance.

[0033] It should be noted that, in the absence of conflict, the features in the embodiments of the present invention can be combined with each other.

[0034] The embodiment of the utility model provides a CMP grinding tool, which can timely discharge wastewater and waste organic matter generated during grinding, thereby avoiding adsorption of wastewater and waste metal ions.

[0035] See also Figures 1 to 5The CMP grinding jig 100 provided by the embodiment of the present invention includes a base 110 and a wafer placement table 130. The base 110 is provided with a receiving groove 111. The wafer placement table 130 is movably accommodated in the receiving groove 111 and can be raised and lowered relative to the receiving groove 111. The wafer placement table 130 is used to place the wafer to be ground. The bottom wall of the receiving groove 111 is also provided with a plurality of drainage holes 113. The plurality of drainage holes 113 pass through the bottom side surface of the base 110 and are used to discharge the grinding wastewater in the receiving groove 111.

[0036] In this embodiment, the drain hole 113 is a through hole structure and directly penetrates to the bottom surface of the base 110. During actual grinding, the chemical grinding head above the wafer placement table 130 grinds the wafer surface. The waste water generated during grinding will flow into the receiving groove 111 and be directly discharged through multiple drain holes 113, avoiding the accumulation of waste water and the adsorption of waste metal ions.

[0037] In this embodiment, a clearance groove 115 is provided in the middle of the bottom wall of the accommodating groove 111, and a lifting assembly 150 is provided on the bottom side of the wafer placement platform 130. The lifting assembly 150 is at least partially installed in the clearance groove 115 and is capable of driving the wafer placement platform 130 to move up and down relative to the accommodating groove 111. Specifically, the lifting assembly 150 includes a cylinder drive member, the piston rod of the cylinder drive member is connected to the bottom side of the wafer placement platform 130, and is capable of driving the wafer placement platform 130 to move up and down, thereby driving the wafer placement platform 130 to rise during grinding, so that the wafer placement platform 130 can be separated from the accommodating groove 111 and expose the drainage hole 113 at the bottom, which is convenient for drainage.

[0038] In this embodiment, there are multiple drain holes 113, and the multiple drain holes 113 are evenly distributed around the clearance groove 115. Specifically, there can be six drain holes 113, and the six drain holes 113 are evenly distributed around the clearance groove 115, so that the wastewater can be evenly discharged. Of course, the number of drain holes 113 here is only an example and does not serve as a limitation.

[0039] In this embodiment, a communication hole 117 is provided in the clearance groove 115, and the communication hole 117 extends through the bottom surface of the base 110. Specifically, the communication hole 117 is located at the edge of the clearance groove 115 and can drain wastewater overflowing into the clearance groove 115, thereby preventing wastewater from accumulating in the clearance groove 115.

[0040] In this embodiment, the CMP polishing tool 100 further includes an edge grinding ring 170. This ring is mounted on the base 110 and surrounds the wafer platform 130, ensuring contact with the edge of the wafer. Specifically, while the chemical polishing head is polishing the edge of the wafer, the edge grinding ring 170 adheres to the edge of the wafer from bottom to top, thereby protecting the edge of the wafer and preventing cracks. It also removes organic waste generated during polishing, ensuring a consistent polishing effect on the wafer edge.

[0041] Furthermore, the bottom side of the edge grinding ring 170 is provided with a plurality of lifting shafts 171, and the base 110 is provided with a plurality of lifting holes, which are arranged around the accommodating groove 111. The plurality of lifting shafts 171 are accommodated in the plurality of lifting holes in a one-to-one correspondence, and are used to drive the edge grinding ring 170 to rise and fall relative to the base 110. Specifically, the base 110 is also provided with a plurality of lifting drive members, which can be a plurality of lifting cylinders. The plurality of lifting drive members are respectively connected to the plurality of lifting shafts 171, and can drive the edge grinding ring 170 to move up and down through the plurality of lifting shafts 171. During actual grinding, when the chemical grinding head grinds the middle of the wafer, the edge grinding ring 170 is in a low position and does not contact the wafer. When the chemical grinding head grinds the edge of the wafer, the lifting drive member can drive the edge grinding ring 170 to rise through the lifting shafts 171 and fit highly to the edge position of the wafer, thereby being able to play a bearing and protective role on the edge of the wafer.

[0042] It is worth noting that in this embodiment, there can be four lifting shafts 171, and they are evenly distributed around the accommodating groove 111. Of course, in other preferred embodiments of the present invention, there can also be two lifting shafts 171, and the two lifting shafts 171 are respectively located on both sides of the accommodating groove 111, which can also achieve the lifting effect of the edge grinding ring 170.

[0043] In this embodiment, the inner diameter of the edge grinding ring 170 is larger than the outer diameter of the wafer placement platform 130. Specifically, the outer diameter of the wafer placement platform 130 is slightly smaller than the size of the wafer, and the size of the edge grinding ring 170 is adapted to the size of the wafer, allowing the edge grinding ring 170 to be arranged around the wafer placement platform 130 and to rise and fall freely.

[0044] In this embodiment, a transition arc 173 is provided on the top inner edge of the edge grinding ring 170. The transition arc 173 is configured to mate with the bottom edge of the wafer. Specifically, the provision of the transition arc 173 can reduce the alignment accuracy requirements between the edge grinding ring 170 and the wafer, thereby better ensuring that the edge grinding ring 170 can abut against the edge area of ​​the wafer.

[0045] In this embodiment, a guide arc 119 is provided on the top edge of the receiving groove 111. The guide arc 119 extends to the edge of the base 110 and is used to guide the polishing wastewater into the receiving groove 111. Specifically, the guide arc 119 expands and extends outward beyond the range of the wafer. Therefore, during the polishing process, the polishing wastewater falling from the edge of the wafer can flow to the guide arc 119, and then converge into the receiving groove 111 through the guide arc 119, and then be discharged through the drain hole 113, ensuring the drainage effect.

[0046] The present invention also provides a CMP polishing device, including a chemical polishing wheel and the aforementioned CMP polishing jig 100. The CMP polishing jig 100 includes a base 110 and a wafer placement table 130. The base 110 is provided with a receiving groove 111. The wafer placement table 130 is movably accommodated in the receiving groove 111 and can be raised and lowered relative to the receiving groove 111. The wafer placement table 130 is used to place a wafer to be polished. The bottom wall of the receiving groove 111 is also provided with a plurality of drain holes 113. The plurality of drain holes 113 extend through the bottom surface of the base 110 and are used to discharge polishing wastewater in the receiving groove 111. The chemical polishing wheel is disposed above the wafer placement table 130 and is used to perform surface polishing on the wafer.

[0047] Regarding the configuration and working principle of the chemical grinding wheel, reference may be made to the relevant description in the prior art.

[0048] In summary, the CMP grinding jig 100 and CMP grinding equipment provided by the embodiment of the present invention are provided with a receiving groove 111 on the base 110, and a wafer placement platform 130 is movably accommodated in the receiving groove 111 and can be raised and lowered relative to the receiving groove 111. The wafer placement platform 130 is used to place the wafer to be ground. At the same time, the bottom wall of the receiving groove 111 is also provided with a plurality of drainage holes 113. The plurality of drainage holes 113 pass through the bottom surface of the base 110 and can discharge the grinding wastewater in the receiving groove 111. Compared with the prior art, the present invention can directly discharge the grinding wastewater in the receiving groove 111 during actual grinding by adding the receiving groove 111 and the drainage holes 113, thereby promptly discharging the wastewater and waste organic matter generated during grinding and avoiding the adsorption of wastewater and waste metal ions.

[0049] The above is only a specific implementation method of the present invention, but the protection scope of the present invention is not limited to this. Any changes or replacements that can be easily thought of by any technician familiar with this technical field within the technical scope disclosed in the present invention should be included in the protection scope of the present invention.

Claims

1. A CMP polishing tool, characterized in that: It includes a base and a wafer placement table, the base is provided with a receiving groove, the wafer placement table is movably accommodated in the receiving groove and can be raised and lowered relative to the receiving groove, and the wafer placement table is used to place the wafer to be ground, and the bottom wall of the receiving groove is also provided with multiple drainage holes, and the multiple drainage holes pass through the bottom side surface of the base, for discharging the grinding wastewater in the receiving groove.

2. The CMP polishing tool according to claim 1, wherein: A clearance groove is provided in the middle of the bottom wall of the accommodating groove, and a lifting component is provided on the bottom side of the wafer placement table. The lifting component is at least partially installed in the clearance groove and can drive the wafer placement table to rise and fall relative to the accommodating groove.

3. The CMP polishing tool according to claim 2, wherein: There are multiple drainage holes, and the multiple drainage holes are evenly distributed around the clearance groove.

4. The CMP polishing tool according to claim 2, wherein: A communication hole is provided in the recess, and the communication hole passes through to the bottom surface of the base.

5. The CMP polishing tool according to claim 1, wherein: The CMP grinding tool further includes an edge grinding ring, which is arranged on the base and surrounds the wafer placement table to be attached to the edge of the wafer.

6. The CMP polishing tool according to claim 5, characterized in that: A plurality of lifting shafts are provided on the bottom side of the edge grinding ring, and a plurality of lifting holes are provided on the base. The plurality of lifting holes are arranged around the accommodating groove, and the plurality of lifting shafts are accommodated in the plurality of lifting holes in a one-to-one correspondence, so as to drive the edge grinding ring to rise and fall relative to the base.

7. The CMP polishing tool according to claim 5, characterized in that: The inner diameter of the edge grinding ring is larger than the outer diameter of the wafer placement table.

8. The CMP polishing tool according to claim 5, characterized in that: The top inner edge of the edge grinding ring is provided with a transition arc surface, and the transition arc surface is used to fit to the bottom edge of the wafer.

9. The CMP polishing tool according to claim 1, wherein: A guide arc surface is provided on the top side edge of the accommodating groove, and the guide arc surface extends to the edge of the base and is used to guide the grinding wastewater to the accommodating groove.

10. A CMP polishing device, characterized in that: It comprises a chemical grinding wheel and the CMP grinding tool according to any one of claims 1 to 9, wherein the chemical grinding wheel is arranged above the wafer placement table and is used for grinding the surface of the wafer.

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