Chemical vapor deposition equipment

Abstract

The utility model relates to chemical vapor deposition equipment. The chemical vapor deposition equipment comprises an electron emission device and a reaction device, the electron emission device comprises a thermal ionization mechanism and an anode structure, the thermal ionization mechanism is provided with a thermal ionization cavity and a resistance wire arranged outside the thermal ionization cavity, the thermal ionization cavity is used for containing thermal ionization gas, the resistance wire can heat the thermal ionization cavity, the anode structure is located on one side of the thermal ionization mechanism, and a first through hole is formed in the anode structure. The first through hole is communicated with the thermal ionization cavity, the reaction device comprises a vapor deposition chamber and a reaction gas conveying mechanism, the interior of the vapor deposition chamber is communicated with the end, away from the thermal ionization cavity, of the first through hole, and the reaction gas conveying mechanism is communicated with the interior of the vapor deposition chamber. The electron emission performance of the electron emission device is stable, the cleaning and maintenance frequency of the chemical vapor deposition equipment can be reduced, the ionization performance of the chemical vapor deposition equipment on reaction gas is stable, and the chemical vapor deposition efficiency of the chemical vapor deposition equipment is stable.

Description

Technical Field

[0001] The utility model relates to the technical field of chemical vapor deposition, in particular to a chemical vapor deposition device. Background Art

[0002] like Figure 1 As shown, the chemical vapor deposition equipment 1' in the related art often includes a vapor deposition chamber 10', a first electrode 11' arranged at the top of the vapor deposition chamber 10', and a second electrode 12' arranged at the bottom of the vapor deposition chamber 10'. When it is necessary to coat the surface of a panel that has not yet been formed into a finished product, the panel is placed on the second electrode 12'. The vapor deposition chamber 10' is filled with a reaction gas including film-forming raw materials. By connecting the first electrode 11' and the second electrode 12', the reaction gas is converted into a plasma in a plasma state, so that the film-forming raw materials can react uniformly on the surface of the panel and deposit to form a film layer.

[0003] However, during the vapor deposition process, the film-forming raw materials will also be deposited on the surfaces of the first electrode 11' and the second electrode 12' to form a film layer. This film layer will affect the ionization ability of the first electrode 11' and the second electrode 12' to the reaction gas, thereby affecting the chemical vapor deposition efficiency of the chemical vapor deposition equipment 1'. Therefore, it is necessary to regularly remove the film layer deposited on the surfaces of the first electrode 11' and the second electrode 12'.

[0004] However, each cleaning and maintenance of the first electrode 11' and the second electrode 12' will cause certain damage to the first electrode 11' and the second electrode 12', resulting in accelerated aging of the first electrode 11' and the second electrode 12'. As a result, after a period of use of the first electrode 11' and the second electrode 12', even if cleaning and maintenance are completed, it is difficult for the chemical vapor deposition efficiency of the chemical vapor deposition equipment 1' to meet the requirements.

[0005] Therefore, the cleaning and maintenance frequency of the chemical vapor deposition equipment 1 ′ in the related art is high, and the chemical vapor deposition efficiency is unstable. Utility Model Content

[0006] The purpose of the utility model is to provide a chemical vapor deposition device, which requires a low frequency of cleaning and maintenance and has a relatively stable chemical vapor deposition efficiency.

[0007] To achieve this purpose, the present invention adopts the following technical solutions:

[0008] A chemical vapor deposition apparatus is provided, comprising:

[0009] An electron emission device, comprising a thermal ionization mechanism and an anode structure, wherein the thermal ionization mechanism has a thermal ionization chamber and a resistance wire disposed outside the thermal ionization chamber, wherein the thermal ionization chamber is used to accommodate thermal ionization gas, and the resistance wire is capable of heating the thermal ionization chamber, wherein the anode structure is located on one side of the thermal ionization mechanism and is provided with a first through hole, wherein the first through hole is connected to the thermal ionization chamber; and

[0010] A reaction device includes a vapor deposition chamber and a reaction gas delivery mechanism, the interior of the vapor deposition chamber is connected to the end of the first through hole away from the thermal ionization chamber, and the reaction gas delivery mechanism is connected to the interior of the vapor deposition chamber.

[0011] As a preferred solution of the chemical vapor deposition equipment, the thermal ionization mechanism further includes a heat-conducting tube, the inner space of the heat-conducting tube forms the thermal ionization chamber, and the resistance wire is arranged around the outer circumference of the heat-conducting tube.

[0012] As a preferred solution of the chemical vapor deposition equipment, the electron emission device further includes a cathode structure, and the cathode structure is located on the other side of the thermal ionization mechanism opposite to the anode structure.

[0013] As a preferred solution of the chemical vapor deposition equipment, the cathode structure is provided with a second through hole, and the second through hole is connected to the thermal ionization chamber;

[0014] The electron emission device further includes a thermal ionization gas transport mechanism, which is connected to the thermal ionization chamber through the second through hole.

[0015] As a preferred solution of the chemical vapor deposition equipment, the reaction device also includes a mixing mechanism, which is arranged between the vapor deposition chamber and the anode structure. The mixing mechanism has a mixing chamber, which is connected between the first through hole and the interior of the vapor deposition chamber, and the reaction gas delivery mechanism is connected to the mixing chamber.

[0016] As a preferred solution of chemical vapor deposition equipment, the mixing mechanism includes a mechanism body and a magnetic ring, the mechanism body has the mixing chamber, the magnetic ring is arranged on the mechanism body around the mixing chamber, and the extension direction of the central axis of the magnetic ring is parallel to the relative direction of the anode structure and the vapor deposition chamber.

[0017] As a preferred embodiment of the chemical vapor deposition equipment, the reaction device further includes an acceleration mechanism, the acceleration mechanism being arranged between the mixing mechanism and the vapor deposition chamber, the acceleration mechanism including a first electrode plate and a second electrode plate spaced apart and arranged opposite to each other, an acceleration chamber being formed between the first electrode plate and the second electrode plate, the first electrode plate being provided with a third through hole, the second electrode plate being provided with a fourth through hole, the third through hole and the fourth through hole both being connected to the acceleration chamber, and an end of the third through hole away from the acceleration chamber being connected to the mixing chamber, and an end of the fourth through hole away from the acceleration chamber being connected to the interior of the vapor deposition chamber;

[0018] The first electrode plate and the second electrode plate are respectively used to be connected to two ends of an external AC circuit, so that when power is applied, the polarities of the first electrode plate and the second electrode plate are opposite at the same time.

[0019] As a preferred solution of the chemical vapor deposition equipment, the aperture of the third through hole is larger than the aperture of the fourth through hole; and / or,

[0020] The number of the third through holes within a unit surface area of ​​the first electrode plate is smaller than the number of the fourth through holes within a unit surface area of ​​the second electrode plate.

[0021] As a preferred solution of the chemical vapor deposition equipment, the surface of the second electrode plate on one side facing away from the first electrode plate includes a middle area and a peripheral area surrounding the middle area, and the number of openings of the third through holes per unit area of ​​the middle area is less than the number of openings of the third through holes per unit area of ​​the peripheral area.

[0022] As a preferred solution of the chemical vapor deposition equipment, an anode supporting platform is further provided inside the vapor deposition chamber. The anode supporting platform is spaced apart and opposite to the electron emission device, and the supporting surface of the anode supporting platform faces the first through hole.

[0023] Compared with the prior art, the present invention has the following advantages:

[0024] The chemical vapor deposition apparatus of the present invention includes an electron emission device, which uses a thermal ionization mechanism to thermally ionize a thermal ionization gas, thereby generating free electrons. The free electrons are then attracted and accelerated by an anode structure, allowing the free electrons to pass through a first through hole and be emitted into the interior of a reaction device. The electrons and the reaction gas are then mixed within the reaction device, thereby converting the reaction gas into a plasma state within the reaction device. During use of the chemical vapor deposition apparatus of the present invention, the plasma formed by the reaction gas does not enter the interior of the electron emission device. Therefore, the electron emission device requires less frequent cleaning and maintenance, and its aging rate is less affected by manual maintenance processes, resulting in a slower aging rate. Consequently, the electron emission performance of the electron emission device is more stable, which can reduce the cleaning and maintenance frequency of the chemical vapor deposition apparatus and ensure more stable ionization performance of the chemical vapor deposition apparatus for the reaction gas, thereby achieving more stable chemical vapor deposition efficiency of the chemical vapor deposition apparatus. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 A schematic structural diagram of a chemical vapor deposition device provided by the prior art.

[0026] Figure 2 This is a schematic structural diagram of a chemical vapor deposition device according to an embodiment of the present invention.

[0027] Figure 3 Schematic diagram of the structure of the electron emission device according to an embodiment of the present invention.

[0028] Figure 4 for Figure 2 Enlarged schematic diagram of point M in the middle.

[0029] Figure 1 middle:

[0030] 1', chemical vapor deposition equipment; 10', vapor deposition chamber; 11', first electrode; 12', second electrode.

[0031] Figures 2 to 4 middle:

[0032] 1. Chemical vapor deposition equipment; 10. Electron emission device; 100. Thermal ionization mechanism; 1001. Thermal ionization chamber; 1002. Resistance wire; 1003. Thermal conductive tube; 101. Anode structure; 1010. First through hole; 102. Cathode structure; 1020. Second through hole; 103. Thermal ionization gas delivery mechanism; 104. Device housing; 11. Reaction device; 110. Vapor deposition chamber; 1101. Supporting platform; 1102. Supporting surface; 111. Reaction gas delivery mechanism; 112. Mixing mechanism; 1120. Mixing chamber; 1121. Mechanism body; 1122. Magnetic ring; 113. Accelerating mechanism; 1131. First electrode plate; 1131a. Third through hole; 1132. Second electrode plate; 1132a. Fourth through hole; 1132b. Middle area; 1132c. Peripheral area; 1133. Accelerating chamber. DETAILED DESCRIPTION

[0033] The advantages and features of the present invention and methods for achieving them will become apparent with reference to the embodiments described in detail below in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but can be implemented in a variety of different forms. These embodiments are provided merely to complete the disclosure of the present invention and enable those skilled in the art to fully understand the scope of the present invention. The present invention is limited only by the scope of the claims. The same reference numerals represent the same components throughout the specification.

[0034] Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

[0035] like Figure 2 and Figure 3 As shown, a chemical vapor deposition apparatus 1 is provided, comprising an electron emission device 10 and a reaction device 11. The electron emission device 10 comprises a thermal ionization mechanism 100 and an anode structure 101. The thermal ionization mechanism 100 comprises a thermal ionization chamber 1001 and a resistance wire 1002 disposed outside the thermal ionization chamber 1001. The thermal ionization chamber 1001 is used to accommodate thermal ionization gas, and the resistance wire 1002 is capable of heating the thermal ionization chamber 1001. The anode structure 101 is located on one side of the thermal ionization mechanism 100 and is provided with a first through hole 1010, which is connected to the thermal ionization chamber 1001. The reaction device 11 comprises a vapor deposition chamber 110 and a reaction gas delivery mechanism 111. The interior of the vapor deposition chamber 110 is connected to the end of the first through hole 1010 away from the thermal ionization chamber 1001, and the reaction gas delivery mechanism 111 is connected to the interior of the vapor deposition chamber 110.

[0036] By making the chemical vapor deposition equipment 1 of the present invention include an electron emission device 10, the thermal ionization gas is thermally ionized through the thermal ionization mechanism 100, thereby generating free electrons, and then the free electrons are attracted and accelerated by the anode structure 101, so that the free electrons can pass through the first through hole 1010 and be emitted into the interior of the reaction device 11, and the reaction gas can be transported to the interior of the reaction device 11 through the reaction gas delivery mechanism 111, so that the electrons and the reaction gas can be mixed inside the reaction device 11, so that the reaction gas can be converted into a plasma in a plasma state inside the reaction device 11. During use of the chemical vapor deposition equipment 1 of the present invention, the plasma formed by the reaction gas will not enter the interior of the electron emission device 10. Therefore, the cleaning and maintenance frequency required for its electron emission device 10 is low, and the aging rate of the electron emission device 10 is less affected by the manual maintenance process and the aging rate is slow, so that the electron emission performance of the electron emission device 10 is relatively stable, which can reduce the cleaning and maintenance frequency of the chemical vapor deposition equipment 1 and make the ionization performance of the chemical vapor deposition equipment 1 for the reaction gas more stable, so that the chemical vapor deposition efficiency of the chemical vapor deposition equipment 1 is relatively stable.

[0037] The thermal ionization gas may be any gas that can be thermally ionized in a high temperature environment to generate free electrons. For example, the thermal ionization gas may include but is not limited to helium, neon, argon, krypton, xenon, and radon.

[0038] Optionally, the thermal ionization mechanism 100 further includes a thermally conductive tube 1003, the inner space of the thermally conductive tube 1003 forming a thermal ionization chamber 1001, and the resistance wire 1002 is arranged around the outer circumference of the thermally conductive tube 1003, so that the resistance wire 1002 can generate heat when energized to heat the thermally conductive tube 1003, and then the thermally conductive tube 1003 is used to heat the thermally ionized gas in the thermal ionization chamber 1001, so that the thermally ionized gas in the thermal ionization chamber 1001 is thermally ionized to generate free electrons. In this arrangement, the thermally conductive tube 1003 can be used to separate the thermal ionization chamber 1001 from the resistance wire 1002 to prevent the resistance wire 1002 from interfering with the thermally ionized gas and the free electrons.

[0039] The thermal tube 1003 can be made of a material with excellent thermal conductivity and heat resistance. This allows the thermal tube 1003 to quickly heat up under the heating of the resistance wire 1002, thereby quickly heating the thermal ionization chamber 1001. Furthermore, the thermal tube 1003 is suitable for long-term use in high-temperature environments. Since the ambient temperature required for thermal ionization reactions is generally above 1000°C, the thermal tube 1003 must be formed of a material with a melting point above 1000°C. For example, the material of the thermal tube 1003 may include, but is not limited to, tungsten, gold, copper, iron, and other alloys with a melting point above 1000°C.

[0040] Optionally, the electron emission device 10 further includes a cathode structure 102, which is located on the other side of the thermal ionization mechanism 100 opposite to the anode structure 101, so that the cathode structure 102 can attract cations generated by the thermal ionization reaction to reduce the cations to generate thermal ionized gas. The reduced thermal ionized gas can again undergo a thermal ionization reaction in the thermal ionization mechanism 100, thereby enabling the electron emission device 10 to continuously and stably emit electrons to the reaction device 11.

[0041] Optionally, the electron emission device 10 further includes a device housing 104, wherein the thermal ionization mechanism 100, the anode structure 101, and the cathode structure 102 are all disposed within the device housing 104, the anode structure 101 and the thermal ionization mechanism 100 are spaced apart, and the thermal ionization chamber 1001 and the first through hole 1010 are connected through the space between the device housing 104 and the thermal ionization mechanism 100. Thus, on the one hand, the device housing 104 can separate the thermal ionization mechanism 100, the anode structure 101, and the cathode structure 102 from the external space to prevent the current flowing through the thermal ionization mechanism 100, the anode structure 101, and the cathode structure 102 from affecting the external environment. On the other hand, the thermal ionization chamber 1001 and the first through hole 1010 can be connected through the internal space of the device housing 104, so that the anode structure 101 and the thermal ionization mechanism 100 can be spaced apart to prevent the current flowing through the anode structure 101 from affecting the thermal ionization mechanism 100.

[0042] In other embodiments, an insulating sealing ring may be provided between the anode structure 101 and the thermal ionization mechanism 100 to prevent the current flowing through the anode structure 101 from affecting the thermal ionization mechanism 100 while allowing the thermal ionization chamber 1001 to communicate with the first through hole 1010 .

[0043] In other embodiments, the electron emission device 10 may further include a thermal ionization gas delivery mechanism 103, which is connected to the thermal ionization chamber 1001. Therefore, when the electron emission device 10 is in use, the thermal ionization gas delivery mechanism 103 can continuously deliver thermal ionization gas to the thermal ionization chamber 1001, so that the thermal ionization chamber 1001 is always filled with sufficient thermal ionization gas, thereby enabling the electron emission device 10 to continuously and stably emit electrons to the reaction device 11.

[0044] In addition, after one panel is coated, the electron emission device 10 stops working during the interval before the next panel is coated. At this time, some of the positive ions generated by the thermal ionization reaction accumulated in the electron emission device 10 can be discharged from the electron emission device 10 as the air pressure balances. In other words, the air pressure in the electron emission device 10 will not rise indefinitely, but will balance with the external air pressure during the interval.

[0045] Optionally, the electron emission device 10 may also include a cathode structure 102 and a thermal ionization gas delivery mechanism 103. In this case, for example, the cathode structure 102 is provided with a second through hole 1020, and the second through hole 1020 is connected to the thermal ionization chamber 1001. The thermal ionization gas delivery mechanism 103 is connected to the thermal ionization chamber 1001 through the second through hole 1020. Thus, on the one hand, the cathode structure 102 can be used to attract and reduce the cations generated by the thermal ionization reaction to generate thermal ionization gas, and on the other hand, In terms of the above, the thermal ionization gas delivery mechanism 103 can deliver thermal ionization gas into the thermal ionization chamber 1001 through the second through hole 1020, and the gas delivered by the thermal ionization gas delivery mechanism 103 can blow the thermal ionization gas generated by reduction in the second through hole 1020 into the thermal ionization chamber 1001, so that the thermal ionization chamber 1001 can be filled with sufficient thermal ionization gas, and the consumption of thermal ionization gas is small, which can make the electron emission performance of the electron emission device 10 more stable and the use cost lower.

[0046] Optionally, the reaction device 11 also includes a mixing mechanism 112, which is arranged between the vapor deposition chamber 110 and the anode structure 101. The mixing mechanism 112 has a mixing chamber 1120, which is connected between the first through hole 1010 and the interior of the vapor deposition chamber 110. The reaction gas delivery mechanism 111 is connected to the mixing chamber 1120, so that the electrons emitted from the first through hole 1010 and the reaction gas delivered by the reaction gas delivery mechanism 111 can be received through the mixing chamber 1120, so that the reaction gas and the electrons are mixed in the mixing chamber 1120 before entering the interior of the vapor deposition chamber 110, and at least part of the reaction gas is first converted into plasma in the mixing chamber 1120 to extend the mixing reaction time of the reaction gas and the electrons, so that the plasma conversion rate of the reaction gas is higher. On the one hand, it can improve the chemical vapor deposition efficiency in the vapor deposition chamber 110, and on the other hand, it can improve the utilization efficiency of the reaction gas and reduce the reaction cost.

[0047] It can be understood that when the reaction device 11 does not include the mixing mechanism 112, one end of the reaction gas delivery mechanism 111 can be directly connected to the interior of the vapor deposition chamber 110 to deliver the reaction gas directly to the interior of the vapor deposition chamber 110, so that the reaction gas is mixed with the electrons emitted from the first through hole 1010 to the interior of the vapor deposition chamber 110 inside the vapor deposition chamber 110, and the reaction gas is converted into a plasma in a plasma state inside the vapor deposition chamber 110.

[0048] Optionally, the mixing mechanism 112 may include a mechanism body 1121 and a magnetic ring 1122, the mechanism body 1121 having a mixing chamber 1120, the magnetic ring 1122 surrounding the mixing chamber 1120 and arranged in the mechanism body 1121, the magnetic ring 1122 may be arranged in the mixing chamber 1120 or outside the mixing chamber 1120, the extension direction of the central axis of the magnetic ring 1122 is parallel to the relative direction of the anode structure 101 and the vapor deposition chamber 110, so that the magnetic ring 1122 can generate a magnetic field in the mixing chamber 1120 with a direction roughly parallel to the relative direction of the anode structure 101 and the vapor deposition chamber 110, and when the electrons cut the magnetic field in the mixing chamber 1120, they can be affected The Lorentz force is exerted in a direction roughly perpendicular to the relative direction of the anode structure 101 and the vapor deposition chamber 110, so that the free electrons and plasma in the mixing chamber 1120 can be stirred and accelerated through the magnetic ring 1122, and the stirred and accelerated free electrons and plasma can stir the reaction gas in the mixing chamber 1120, so that the free electrons and the reaction gas can contact and react more fully, thereby improving the conversion rate of the reaction gas into plasma in the mixing chamber 1120, so as to further improve the chemical vapor deposition efficiency in the vapor deposition chamber 110, further improve the utilization efficiency of the reaction gas, and reduce the reaction cost.

[0049] Since the movement speed of the plasma in the vapor deposition chamber 110 is roughly proportional to the vapor deposition efficiency in the vapor deposition chamber 110, based on this, please combine Figure 4As shown, optionally, the reaction device 11 further includes an accelerating mechanism 113, which is provided between the mixing mechanism 112 and the vapor deposition chamber 110. The accelerating mechanism 113 includes a first electrode plate 1131 and a second electrode plate 1132 that are spaced apart and opposite to each other. An accelerating chamber 1133 is formed between the first electrode plate 1131 and the second electrode plate 1132. The first electrode plate 1131 is provided with a third through hole 1131a, the second electrode plate 1132 is provided with a fourth through hole 1132a, and the third through hole 113 1a and the fourth through hole 1132a are both connected to the acceleration chamber 1133, and the end of the third through hole 1131a away from the acceleration chamber 1133 is connected to the mixing chamber 1120, and the end of the fourth through hole 1132a away from the acceleration chamber 1133 is connected to the interior of the vapor deposition chamber 110, and the first electrode plate 1131 and the second electrode plate 1132 are respectively used to connect with the two ends connected to the external AC circuit, so that when power is turned on, at the same time, the polarity of the first electrode plate 1131 and the second electrode plate 1132 are opposite. Thus, when the first electrode plate 1131 is formed as an anode and the second electrode plate 1132 is formed as a cathode, the first electrode plate 1131 can attract the free electrons and plasma in the mixing chamber 1120, and accelerate the free electrons and plasma to pass through the third through-hole 1131a to enter the acceleration chamber 1133. When the first electrode plate 1131 is formed as a cathode and the second electrode plate 1132 is formed as an anode, the second electrode plate 1132 can attract the free electrons and plasma in the acceleration chamber 1133, and accelerate the free electrons and plasma to pass through the fourth through-hole 1132a to enter the interior of the vapor deposition chamber 110. Therefore, when the first electrode plate 1131 and the second electrode plate 1132 are connected to an external AC circuit, the free electrons and plasma in the mixing chamber 1120 can be continuously accelerated to the interior of the vapor deposition chamber 110 through the acceleration mechanism 113, so as to increase the movement speed of the plasma in the vapor deposition chamber 110, thereby improving the vapor deposition efficiency in the vapor deposition chamber 110.

[0050] In order to make it easier for the free electrons and plasma in the mixing chamber 1120 to pass through the third through hole 1131a to enter the acceleration chamber 1133, the aperture of the third through hole 1131a can be larger, and since the aperture of the third through hole 1131a is larger, the number of openings of the third through hole 1131a can be smaller per unit area of ​​the first electrode plate 1131. In order to make the distribution of the plasma and free electrons passing through the fourth through hole 1132a into the vapor deposition chamber 110 more uniform, the aperture of the fourth through hole 1132a can be smaller, and the number of openings of the fourth through hole 1132a can be larger per unit area of ​​the second electrode plate 1132.

[0051] Based on this, in order to make it easier for the free electrons and plasma in the mixing chamber 1120 to pass through the third through hole 1131a to enter the acceleration chamber 1133, and to make the distribution of the plasma and free electrons passing through the fourth through hole 1132a into the vapor deposition chamber 110 more uniform, optionally, the aperture of the third through hole 1131a can be made larger than the aperture of the fourth through hole 1132a, or, the number of openings of the third through hole 1131a per unit surface area of ​​the first electrode plate 1131 is smaller than the number of openings of the fourth through hole 1132a per unit surface area of ​​the second electrode plate 1132, or, the aperture of the third through hole 1131a is made smaller than the aperture of the fourth through hole 1132a, and, the number of openings of the third through hole 1131a per unit surface area of ​​the first electrode plate 1131 is made smaller than the number of openings of the fourth through hole 1132a per unit surface area of ​​the second electrode plate 1132.

[0052] When the panel is placed in the vapor deposition chamber 110 for chemical vapor deposition, the edge of the panel is closer to the inner wall of the vapor deposition chamber 110. Therefore, the plasma encounters greater resistance when flowing toward the edge of the panel, resulting in a smaller amount of plasma flowing toward the edge of the panel, and the thickness of the film deposited at the edge of the panel is less than the thickness of the film deposited at the center of the panel. Based on this, optionally, the side surface of the second electrode plate 1132 facing away from the first electrode plate 1131 includes a middle region 1132b and a peripheral region 1132c surrounding the middle region 1132b. Within a unit area of ​​the middle region 1132b, the number of openings of the third through-holes 1131a is less than the number of openings of the third through-holes 1131a within a unit area of ​​the peripheral region 1132c. This can increase the amount of plasma flowing toward the edge of the panel, thereby improving the thickness uniformity of the film layer deposited on the panel surface.

[0053] Normally, when using the chemical vapor deposition equipment 1, the vapor deposition chamber 110 is usually located below the electron emission device 10 in the direction of gravity, so that the electrons emitted from the electron emission device 10 move toward the surface of the panel placed inside the vapor deposition chamber 110, toward the upper surface in the direction of gravity.

[0054] Optionally, a supporting platform 1101 is further provided inside the vapor deposition chamber 110. The supporting platform 1101 is spaced apart from and opposite to the electron emission device 10, and a supporting surface 1102 of the supporting platform 1101 faces the first through hole 1010. The supporting surface 1102 is used to support the panel so that the panel can be suspended at the bottom of the vapor deposition chamber 110 in the direction of gravity (that is, the part of the vapor deposition chamber 110 away from the electron emission device 10) to prevent the panel from contacting impurities deposited at the bottom of the vapor deposition chamber 110.

[0055] Optionally, the carrier 1101 can be made of a conductive material, and when the carrier 1101 is connected to an external circuit, it forms an anode, that is, the carrier 1101 can be an anode carrier, so that during the use of the chemical vapor deposition equipment 1, the anode carrier can be used to attract the plasma inside the vapor deposition chamber 110 to flow to the surface of the panel supported by the supporting surface 1102, thereby improving the utilization rate of the plasma and the vapor deposition efficiency.

[0056] In other embodiments, the vapor deposition chamber 110 may not be provided with the supporting platform 1101 , and the panel may be directly placed on the bottom of the vapor deposition chamber 110 .

[0057] Although the embodiments of the present invention have been described above with reference to the accompanying drawings, the present invention is not limited to the above embodiments, but can be manufactured in various forms, and those skilled in the art will understand that the present invention can be implemented in other specific forms without changing the technical spirit or basic features of the present invention. Therefore, it should be understood that the above embodiments are illustrative and not restrictive in all aspects.

Claims

1. A chemical vapor deposition device, characterized in that: include: An electron emission device, comprising a thermal ionization mechanism and an anode structure, wherein the thermal ionization mechanism has a thermal ionization chamber and a resistance wire disposed outside the thermal ionization chamber, wherein the thermal ionization chamber is used to accommodate thermal ionization gas, and the resistance wire is capable of heating the thermal ionization chamber, wherein the anode structure is located on one side of the thermal ionization mechanism and is provided with a first through hole, wherein the first through hole is connected to the thermal ionization chamber; and A reaction device includes a vapor deposition chamber and a reaction gas delivery mechanism, the interior of the vapor deposition chamber is connected to the end of the first through hole away from the thermal ionization chamber, and the reaction gas delivery mechanism is connected to the interior of the vapor deposition chamber.

2. The chemical vapor deposition apparatus according to claim 1, wherein: The thermal ionization mechanism further includes a heat-conducting tube, the inner space of the heat-conducting tube forms the thermal ionization chamber, and the resistance wire is arranged around the outer circumference of the heat-conducting tube.

3. The chemical vapor deposition apparatus according to claim 1, wherein: The electron emission device further includes a cathode structure located on the other side of the thermal ionization mechanism opposite to the anode structure.

4. The chemical vapor deposition equipment according to claim 3, characterized in that The cathode structure is provided with a second through hole, and the second through hole is connected to the thermal ionization chamber; The electron emission device further includes a thermal ionization gas transport mechanism, which is connected to the thermal ionization chamber through the second through hole.

5. The chemical vapor deposition equipment according to claim 1, characterized in that The reaction device also includes a mixing mechanism, which is arranged between the vapor deposition chamber and the anode structure. The mixing mechanism has a mixing chamber, which is connected between the first through hole and the interior of the vapor deposition chamber. The reaction gas delivery mechanism is connected to the mixing chamber.

6. The chemical vapor deposition apparatus according to claim 5, characterized in that: The mixing mechanism includes a mechanism body and a magnetic ring, the mechanism body has the mixing chamber, the magnetic ring surrounds the mixing chamber and is arranged on the mechanism body, and the extension direction of the central axis of the magnetic ring is parallel to the relative direction of the anode structure and the vapor deposition chamber.

7. The chemical vapor deposition apparatus according to claim 5, wherein: The reaction device further includes an accelerating mechanism, which is disposed between the mixing mechanism and the vapor deposition chamber. The accelerating mechanism includes a first electrode plate and a second electrode plate that are spaced apart and arranged opposite to each other, an accelerating chamber is formed between the first electrode plate and the second electrode plate, the first electrode plate is provided with a third through hole, and the second electrode plate is provided with a fourth through hole, the third through hole and the fourth through hole are both connected to the accelerating chamber, and an end of the third through hole away from the accelerating chamber is connected to the mixing chamber, and an end of the fourth through hole away from the accelerating chamber is connected to the interior of the vapor deposition chamber; The first electrode plate and the second electrode plate are respectively used to communicate with two ends of an external AC circuit, so that when power is turned on, the polarities of the first electrode plate and the second electrode plate are opposite at the same time.

8. The chemical vapor deposition apparatus according to claim 7, wherein: The aperture of the third through hole is larger than the aperture of the fourth through hole; and / or, The number of the third through holes within a unit surface area of ​​the first electrode plate is smaller than the number of the fourth through holes within a unit surface area of ​​the second electrode plate.

9. The chemical vapor deposition apparatus according to claim 7, wherein: The second electrode plate includes a middle area and a peripheral area surrounding the middle area. The number of the third through holes per unit area of ​​the middle area is smaller than the number of the third through holes per unit area of ​​the peripheral area.

10. The chemical vapor deposition apparatus according to any one of claims 1 to 9, characterized in that: An anode supporting platform is further provided inside the vapor deposition chamber. The anode supporting platform is spaced apart from and opposite to the electron emission device, and a supporting surface of the anode supporting platform faces the first through hole.

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