Etching device and etching equipment

Abstract

The utility model provides an etching device and etching equipment, and relates to the technical field of etching. The etching device comprises a reaction chamber, a wafer placing platform, a protective gas ring and a gas source, the wafer placing platform is arranged in the reaction chamber and provided with a placing tray for placing a wafer, the protective gas ring is arranged on the side wall of the wafer placing platform and annularly arranged on the placing tray, the wafer placing platform is provided with a gas hole channel, and the gas source is arranged in the gas hole channel. One end of the air hole channel is communicated to the protective gas ring, the other end is communicated to an air source, and the air source ventilates air to the protective gas ring through the air hole channel, so that the protective gas ring expands and covers the edge area of the wafer. Compared with the prior art, the protective gas ring is additionally arranged, and gas is introduced into the protective gas ring through the gas hole channel by utilizing a gas source during etching, so that the protective gas ring covers the edge area of the wafer after being inflated, the edge of the wafer can be protected, the edge of the wafer is prevented from being over-etched in the etching process, and the etching quality of the wafer is improved. And the wafer etching quality is ensured.

Description

Technical Field

[0001] The utility model relates to the technical field of etching, in particular to an etching device and etching equipment. Background Art

[0002] The plasma etching process uses high-frequency power to form an electric field between an upper electrode and a lower electrode separated by a predetermined distance within the interior space of a sealed chamber. After the electric field activates the reactive gas supplied to the interior space of the chamber to form a plasma state, the plasma ions are used to etch the substrate object (such as a wafer / glass, etc.) placed on the wafer placement platform. Due to the application of high-frequency power, the plasma will expand the electric field formation area formed on the upper part of the wafer placement platform to the edge area outside the area where the substrate object is located, that is, the etching area is expanded, which can easily lead to over-etching of the edge of the substrate object, affecting the lattice arrangement of the substrate object, easily causing edge cracks and ionization of the adhesive layer in the substrate, leading to chamber contamination, and further affecting the etching uniformity of the plasma etching equipment. Utility Model Content

[0003] The purpose of the utility model includes providing an etching device and an etching equipment, which can protect the edge of the wafer, thereby avoiding the problem of excessive etching of the edge of the wafer and ensuring the etching quality of the wafer.

[0004] The embodiment of the present utility model can be implemented as follows:

[0005] On the one hand, an embodiment of the present invention provides an etching device, comprising a reaction chamber, a wafer placement platform, a protective gas ring and a gas source, wherein the wafer placement platform is arranged in the reaction chamber and has a placement tray for placing wafers, the protective gas ring is arranged on the side wall of the wafer placement platform and is arranged around the placement tray, and the wafer placement platform has an air hole channel, one end of the air hole channel is connected to the protective gas ring, and the other end is connected to the gas source, and the gas source vents to the protective gas ring through the air hole channel so that the protective gas ring expands and covers the edge area of ​​the wafer.

[0006] Furthermore, a pipe joint is provided on the bottom surface of the wafer placement platform, and the pipe joint is connected to the air hole channel and is connected to the air source through a pipeline.

[0007] Furthermore, the gas source includes a gas tank and an air pump. The gas tank stores nitrogen or argon and has a gas valve. The gas valve is connected to the gas pump through a pipeline, and the gas pump is connected to the pipe joint through a pipeline.

[0008] Furthermore, the reaction chamber includes a base, a shell and an upper cover, the wafer placement platform is arranged on the base, the gas source is arranged outside the base, the shell is integrally arranged on the edge of the base and is surrounded to form an opening, the upper cover is detachably sealed at the opening and abuts against the shell to form a reaction chamber.

[0009] Furthermore, a cover column is provided on the bottom side of the upper cover, and the cover column extends into the opening. An elastic sealing ring is provided on the side wall, and the elastic sealing ring is sealed against the inner surface of the enclosure.

[0010] Furthermore, a sealing air ring is provided on the side wall of the cover column, and the sealing air ring is used to abut against the inner surface of the enclosure in an expanded state.

[0011] Furthermore, the side wall of the cover column is also provided with an inflation hole, which is connected to the sealing air ring. The top side surface of the upper cover is provided with an air injection hole, which is connected to the inflation hole and is connected to an air injection pipe, which is connected to the air source.

[0012] Furthermore, the sealing air ring and the elastic sealing ring are parallel to each other, and the sealing air ring is arranged at the bottom end of the cover column, and the elastic sealing ring is arranged in the middle of the cover column.

[0013] Furthermore, the outer diameter of the cover column is smaller than the outer diameter of the upper cover, and the outer diameter of the cover column is smaller than the inner diameter of the surrounding shell.

[0014] On the other hand, an embodiment of the present invention provides an etching device, comprising an ionization device and the aforementioned etching device, wherein the ionization device is disposed in the reaction chamber.

[0015] The beneficial effects of the etching device and etching equipment provided by the embodiments of the utility model include:

[0016] The etching device and etching equipment provided by the embodiment of the present invention are characterized in that a wafer placement platform is arranged on the bottom wall of a reaction chamber, and the wafer placement platform has a placement tray, and a protective gas ring is arranged on the side wall of the wafer placement platform and is arranged around the placement tray, and the wafer placement platform has an air hole channel, one end of the air hole channel is connected to the protective gas ring, and the other end is connected to the gas source, and the gas source can ventilate the protective gas ring through the air hole channel, so that the protective gas ring expands and covers the edge area of ​​the wafer. Compared with the prior art, the present invention adds a protective gas ring, and the protective gas ring is in a deflated state before etching, so that the wafer can be placed smoothly. During etching, the gas source is used to ventilate the protective gas ring through the air hole channel, so that the protective gas ring covers the edge area of ​​the wafer after being inflated, thereby protecting the edge of the wafer, avoiding excessive etching of the wafer edge during the etching process, and ensuring the etching quality of the wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following is a brief introduction to the drawings required for use in the embodiments. It should be understood that the following drawings only illustrate certain embodiments of the present invention and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can be obtained based on these drawings without paying any creative work.

[0018] Figure 1 A schematic structural diagram of the etching device provided in this embodiment;

[0019] Figure 2 for Figure 1 Schematic diagram of the structure of the wafer placement platform;

[0020] Figure 3 for Figure 1 Structural cross-sectional view of the wafer placement platform;

[0021] Figure 4 for Figure 1 Schematic diagram of the combined structure of the reaction chamber.

[0022] icon:

[0023] 100-etching device; 110-reaction chamber; 111-base; 113-enclosing shell; 115-upper cover; 117-cover column; 118-elastic sealing ring; 119-sealing gas ring; 130-wafer placement platform; 131-air hole channel; 133-pipe joint; 150-protective gas ring; 170-gas source; 171-gas storage tank; 173-air pump; 200-wafer. DETAILED DESCRIPTION

[0024] To make the purpose, technical solutions, and advantages of the embodiments of the present invention more clear, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Generally, the components of the embodiments of the present invention described and shown in the drawings herein can be arranged and designed in various different configurations.

[0025] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but rather merely represents selected embodiments of the present invention. All other embodiments derived by persons of ordinary skill in the art based on the embodiments of the present invention without creative effort are intended to fall within the scope of protection of the present invention.

[0026] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, it does not need to be further defined or explained in subsequent drawings.

[0027] In the description of the present invention, it should be noted that if the terms "upper", "lower", "inside", "outside", etc. appear, the orientation or position relationship indicated is based on the orientation or position relationship shown in the accompanying drawings, or is the orientation or position relationship in which the utility model product is usually placed when in use. It is only for the convenience of describing the present invention and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, it cannot be understood as a limitation on the present invention.

[0028] In addition, the terms "first", "second", etc., if used, are merely used to distinguish and describe, and should not be understood as indicating or implying relative importance.

[0029] It should be noted that, in the absence of conflict, the features in the embodiments of the present invention can be combined with each other.

[0030] See also Figures 1 to 4 The embodiment of the present invention provides an etching device 100, which can protect the edge of the wafer 200 through the protective gas ring 150, thereby avoiding the problem of over-etching of the edge of the wafer 200 and ensuring the etching quality of the wafer 200.

[0031] The etching device 100 provided by an embodiment of the present invention includes a reaction chamber 110, a wafer placement platform 130, a protective gas ring 150 and a gas source 170. The wafer placement platform 130 is arranged in the reaction chamber 110 and has a placement tray for placing the wafer 200. The protective gas ring 150 is arranged on the side wall of the wafer placement platform 130 and is arranged around the placement tray. The wafer placement platform 130 has an air hole channel 131. One end of the air hole channel 131 is connected to the protective gas ring 150, and the other end is connected to the gas source 170. The gas source 170 vents to the protective gas ring 150 through the air hole channel 131 so that the protective gas ring 150 expands and covers the edge area of ​​the wafer 200.

[0032] In this embodiment, the reaction chamber 110 can be an etching chamber, the wafer placement platform 130 is fixed on the bottom wall of the reaction chamber 110, and the gas source 170 can be set outside the reaction chamber 110, and the gas supply is realized from the outside. The protective gas ring 150 is inflated through the air hole channel 131, and the gas source 170 is used to provide filling gas. The filling gas can be an inert gas, such as nitrogen or argon. The air pressure is used to act on the protective gas ring 150, so that the protective gas ring 150 bulges after inflation and covers the edge area of ​​the wafer 200.

[0033] It should be noted that the wafer 200 can be a bare wafer or a combined structure in which the wafer is bonded to a metal carrier through an adhesive layer. Here, the protective air ring 150 can be set close to the top edge of the wafer placement platform 130. In the deflated state, the protective air ring 150 is located below the top surface of the wafer placement platform 130 and will not affect the placement of the wafer 200. In the inflated state, the protective air ring 150 will extend upward and cover the side walls and edges of the wafer 200, thereby achieving edge protection for the wafer 200.

[0034] Furthermore, a pipe joint 133 is provided on the bottom surface of the wafer placement platform 130. This pipe joint 133 connects to the air hole channel 131 and is connected to the gas source 170 via a pipeline. Specifically, the pipe joint 133 directly penetrates the bottom wall of the reaction chamber 110 and connects to the external gas source 170. Furthermore, the pipe joint 133 functions as a switch, enabling the introduction and interruption of gas from the outside. Furthermore, when the gas source 170 is exhausted and needs to be replaced, it can be directly removed and replaced, which is very convenient.

[0035] In this embodiment, gas source 170 includes a gas tank 171 and an air pump 173. Gas tank 171 stores nitrogen or argon and has a valve. The valve is connected to air pump 173 via a pipeline, and air pump 173 is connected to pipe joint 133 via a pipeline. Specifically, gas tank 171 stores an inert gas, such as argon or nitrogen. When the valve is open, air pump 173 delivers this gas to pipe joint 133 and then to protective gas ring 150, thereby achieving inflation. During the deflation phase, air pump 173 can reversely pump air, thereby rapidly defusing the gas.

[0036] The reaction chamber 110 includes a base 111, a shell 113, and a top cover 115. The wafer placement platform 130 is disposed on the base 111, and the gas source 170 is disposed outside the base 111. The shell 113 is integrally disposed at the edge of the base 111 and is formed around an opening. The top cover 115 is detachably sealed at the opening and abuts against the shell 113 to form the reaction chamber 110. Specifically, the shell 113 can be cylindrical, thereby forming a circular opening, and the shell 113 can be integrally disposed on the base 111, the wafer placement platform 130 is disposed at the center of the base 111, and the shape of the top cover 115 is adapted to the shape of the opening and can be sealed at the opening, thereby forming a sealed reaction chamber 110.

[0037] In this embodiment, a cover post 117 is provided on the bottom side of the upper cover 115. The cover post 117 extends into the opening, and an elastic sealing ring 118 is provided on the side wall. The elastic sealing ring 118 seals against the inner surface of the enclosure 113. Specifically, the outer diameter of the cover post 117 is smaller than the outer diameter of the upper cover 115, and the outer diameter of the cover post 117 is smaller than the inner diameter of the enclosure. During actual assembly, this ensures that the cover post 117 can be smoothly installed into the opening, while the upper cover 115 can be abutted against the top surface of the enclosure 113, ensuring assembly reliability. The elastic sealing ring can be made of rubber material, which can elastically abut against the inner surface of the enclosure 113, thereby achieving a seal.

[0038] Furthermore, the sidewall of the cover column 117 is further provided with a sealing gas ring 119, which is used to abut against the inner surface of the shell 113 in an expanded state. Specifically, the sealing gas ring 119 can expand and abut against the inner wall of the shell 113 in an inflated state, thereby enhancing the sealing performance.

[0039] In this embodiment, the sidewall of the cover column 117 is further provided with a gas charging hole, which is in communication with the sealing gas ring 119. The top surface of the upper cover 115 is provided with a gas injection hole, which is in communication with the gas charging hole and is connected to a gas injection pipe, which is connected to the gas source 170. Specifically, the gas injection pipe is connected to the gas storage tank 171, and is pumped and charged by an additionally designed air pump 173. That is, the gas storage tank 171 can be connected to two air pumps 173, one of which is connected to the protective gas ring 150, and the other is connected to the sealing gas ring 119.

[0040] In this embodiment, the sealing gas ring 119 and the elastic sealing ring 118 are parallel to each other, and the sealing gas ring 119 is arranged at the bottom end of the cover column 117, while the elastic sealing ring 118 is arranged in the middle of the cover column 117. Specifically, the sealing gas ring 119 and the elastic sealing ring 118 are spaced apart and arranged in parallel with each other. During actual installation, the two can simultaneously abut against the inner wall of the enclosure 113, thereby achieving a double seal and further ensuring the sealing effect.

[0041] The present invention also provides an etching apparatus, including an ionization device and the aforementioned etching device. The etching device 100 includes a reaction chamber 110, a wafer placement platform 130, a protective gas ring 150, and a gas source 170. The wafer placement platform 130 is disposed in the reaction chamber 110 and has a placement tray for placing the wafer 200. The protective gas ring 150 is disposed on the side wall of the wafer placement platform 130 and is arranged around the placement tray. The wafer placement platform 130 has an air hole channel 131. One end of the air hole channel 131 is connected to the protective gas ring 150, and the other end is connected to the gas source 170. The gas source 170 vents the protective gas ring 150 through the air hole channel 131, so that the protective gas ring 150 expands and covers the edge area of ​​the wafer 200. The ionization device is disposed in the reaction chamber 110.

[0042] Specifically, the basic structure and ionization principle of the ionization device can be referred to existing etching equipment, and will not be introduced in detail here.

[0043] To sum up, the etching device and etching equipment provided in the embodiment set the wafer placement platform 130 on the bottom wall of the reaction chamber 110, and the wafer placement platform 130 has a placement tray, and the protective gas ring 150 is set on the side wall of the wafer placement platform 130 and is arranged around the placement tray, and the wafer placement platform 130 has an air hole channel 131, one end of the air hole channel is connected to the protective gas ring 150, and the other end is connected to the gas source 170, and the gas source 170 can ventilate to the protective gas ring 150 through the air hole channel 131, so that the protective gas ring 150 expands and covers the edge area of ​​the wafer 200. Compared with the prior art, the present invention adds a protective gas ring 150. Before etching, the protective gas ring 150 is in a deflated state, so that the wafer 200 can be placed smoothly. During etching, the gas source 170 is used to ventilate the protective gas ring 150 through the air hole channel 131, so that the protective gas ring 150 covers the edge area of ​​the wafer 200 after being inflated, thereby protecting the edge of the wafer 200, avoiding excessive etching of the edge of the wafer 200 during the etching process, and ensuring the etching quality of the wafer 200.

[0044] The above is only a specific implementation method of the present invention, but the protection scope of the present invention is not limited to this. Any changes or replacements that can be easily thought of by any technician familiar with this technical field within the technical scope disclosed in the present invention should be covered by the protection scope of the present invention.

Claims

1. An etching device, characterized in that: The invention comprises a reaction chamber, a wafer placement platform, a protective gas ring and an air source. The wafer placement platform is arranged in the reaction chamber and has a placement tray for placing wafers. The protective gas ring is arranged on the side wall of the wafer placement platform and is arranged around the placement tray. The wafer placement platform has an air hole channel, one end of the air hole channel is connected to the protective gas ring, and the other end is connected to the air source. The air source vents to the protective gas ring through the air hole channel so that the protective gas ring expands and covers the edge area of ​​the wafer.

2. The etching device according to claim 1, characterized in that A pipe joint is provided on the bottom surface of the wafer placement platform, and the pipe joint is connected to the air hole channel and is connected to the air source through a pipeline.

3. The etching device according to claim 2, characterized in that The gas source includes a gas storage tank and an air pump. The gas storage tank stores nitrogen or argon and has a gas valve. The gas valve is connected to the gas pump through a pipeline, and the gas pump is connected to the pipe joint through a pipeline.

4. The etching device according to claim 1, characterized in that The reaction chamber includes a base, a shell and an upper cover. The wafer placement platform is arranged on the base, the gas source is arranged outside the base, the shell is integrally arranged on the edge of the base and is surrounded to form an opening. The upper cover is detachably sealed at the opening and abuts against the shell to form a reaction chamber.

5. The etching device according to claim 4, characterized in that A cover column is provided on the bottom side of the upper cover, and the cover column extends into the opening. An elastic sealing ring is provided on the side wall, and the elastic sealing ring is sealed against the inner surface of the enclosure.

6. The etching device according to claim 5, characterized in that The side wall of the cover column is further provided with a sealing air ring, and the sealing air ring is used to abut against the inner surface of the enclosure in an expanded state.

7. The etching device according to claim 6, characterized in that The side wall of the cover column is also provided with an inflation hole, which is connected to the sealing air ring. The top side surface of the upper cover is provided with an air injection hole, which is connected to the inflation hole and is connected to an air injection pipe, which is connected to the air source.

8. The etching device according to claim 6, characterized in that The sealing air ring and the elastic sealing ring are parallel to each other, and the sealing air ring is arranged at the bottom end of the cover column, and the elastic sealing ring is arranged in the middle of the cover column.

9. The etching device according to claim 5, characterized in that The outer diameter of the cover column is smaller than the outer diameter of the upper cover, and the outer diameter of the cover column is smaller than the inner diameter of the surrounding shell.

10. An etching device, characterized in that: It comprises an ionization device and the etching device according to any one of claims 1 to 9, wherein the ionization device is arranged in the reaction chamber.

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