Substrate processing equipment and substrate processing system

Abstract

The utility model provides a substrate processing device and a substrate processing system, belonging to the technical field of semiconductor manufacturing, the substrate processing device comprises a reaction chamber and an accommodating chamber, the reaction chamber is used for dry etching of a substrate, the accommodating chamber is used for accommodating the substrate after the dry etching of the reaction chamber is completed, and the substrate processing system is used for processing the substrate after the dry etching of the reaction chamber is completed. The containing cavity is provided with an inflation inlet and an extraction opening, the inflation inlet is used for being connected with an inflation device so that the containing cavity can be filled with cleaning gas, and the extraction opening is used for being connected with an extraction device so that the cleaning gas in the containing cavity can be extracted away. The wafer subjected to dry etching can be cleaned in the containing cavity through the cleaning gas filled through the gas filling port, the cleaned gas is pumped away through the gas pumping port, and the containing cavity of the substrate processing equipment can clean off reaction gas adsorbed or remaining on the surface of the wafer after wafer etching processing is completed. And the reaction gas is prevented from polluting the unetched wafer in the wafer box.

Description

Technical Field

[0001] The utility model belongs to the technical field of semiconductor manufacturing, and more specifically, relates to a substrate processing device and a substrate processing system. Background Art

[0002] Wafer dry etching is a technique that uses plasma or reactive gases in a vacuum environment to etch materials on the wafer surface. The dry etching process involves converting the relevant gases into plasma in a vacuum environment, forming effective ionic etching reactants. These ions react physically and chemically with the wafer surface to form gaseous products, thereby removing the target material. Dry etching offers excellent directionality and controllable etching profiles, enabling the formation of various structures such as trenches and deep holes, ensuring the fidelity of fine pattern transfer.

[0003] In existing wafer dry etching processes, after etching is completed in the reaction chamber, some reactive gases inevitably adsorb or remain on the wafer surface. These residual reactive gases are then transferred back to the wafer cassette along with the wafer. After the wafer is dry-etched and returned to the cassette, the residual reactive gases on the wafer slowly evaporate. The volatilized reactive gases react with the surfaces of other unetched wafers within the cassette, causing wafer defects. These defects can accumulate, resulting in the most severe defects on the last wafer to be processed in the cassette. Utility Model Content

[0004] The purpose of the utility model is to provide a substrate processing device and a substrate processing system, which can reduce or avoid the problem of wafer defects caused by the unetched wafers in the wafer box being contaminated by the reaction gas adsorbed or residual on the surface of the etched wafers.

[0005] To achieve the above-mentioned purpose, the technical solution adopted by the present invention is as follows: In a first aspect, the present invention provides a substrate processing device, comprising:

[0006] Reaction chamber and accommodating chamber;

[0007] The reaction chamber is used for dry etching of the substrate, and the accommodating chamber is used to accommodate the substrate after the dry etching of the reaction chamber is completed. The accommodating chamber is provided with an inflation port and an exhaust port. The inflation port is used to be connected to the inflation device so that the accommodating chamber is filled with cleaning gas, and the exhaust port is used to be connected to the exhaust device so that the cleaning gas in the accommodating chamber is exhausted.

[0008] In one embodiment, a heating device is further included, and the heating device is used to heat the accommodating cavity.

[0009] In one embodiment, a base for placing the substrate is provided in the accommodating cavity, and the heating device includes a heating plate, which is arranged around the base and below the supporting surface of the base.

[0010] In one embodiment, a gas concentration detector is provided in the accommodating chamber, and the gas concentration detector is used to detect the concentration of the cleaning gas.

[0011] In one embodiment, a controller is further included, which is electrically connected to the exhaust device, the inflation device, the gas concentration detector and the heating device. The controller is used to control the inflation device, the exhaust device and the heating device to be turned off after the concentration of the cleaning gas detected by the gas concentration detector reaches a preset value.

[0012] In one embodiment, the number of the reaction chambers is multiple, and the number of the accommodating chambers is the same as the number of the reaction chambers.

[0013] In one embodiment, the reaction chamber and the accommodating chamber are arranged opposite to each other, or the reaction chamber and the accommodating chamber are arranged adjacent to each other.

[0014] In one embodiment, the connecting pipe is a ceramic piece, the area of ​​the connecting pipe cross section is larger than the area of ​​the pipeline cross section, and the shape of the connecting pipe cross section is the same as the shape of the pipeline cross section.

[0015] In one embodiment, an air pump and an air extraction pump are further included, wherein the air pump is connected to the air filling port, and the air extraction pump is connected to the air extraction port. The air filling port is located at the top of the accommodating cavity, and the air extraction port is located at the bottom of the accommodating cavity.

[0016] In one embodiment, the cleaning gas is nitrogen or an inert gas.

[0017] A second aspect of the present invention provides a substrate processing system, comprising a substrate processing device, wherein the substrate processing device is the substrate processing device described above.

[0018] The substrate processing equipment provided by the present invention includes a reaction chamber and a receiving chamber, wherein the reaction chamber is used for dry etching of substrates, the receiving chamber is used to receive substrates after dry etching of the reaction chamber, the receiving chamber is provided with a gas filling port and a gas extraction port, the gas filling port is used to connect with a gas filling device so that the receiving chamber is filled with cleaning gas, and the gas extraction port is used to connect with a gas extraction device so that the cleaning gas in the receiving chamber is extracted. The receiving chamber of the substrate processing equipment is used to receive wafers after dry etching of the reaction chamber, the receiving chamber is provided with a gas filling port and a gas extraction port, the wafers after dry etching can be cleaned in the receiving chamber by the cleaning gas filled in the gas filling port, and the gas after cleaning is extracted through the gas extraction port. The receiving chamber of the substrate processing equipment can clean the reaction gas adsorbed or residual on the surface of the wafer after the wafer etching process is completed, thereby avoiding the problem that the reaction gas adsorbed or residual on the surface of the wafer contaminates the unetched wafer after the wafer is transferred to the wafer box, causing wafer defects. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0020] Figure 1 A schematic diagram showing a cumulative effect of wafer defects in a wafer box as the number of wafers dry-etched increases in the prior art;

[0021] Figure 2 A schematic diagram of the structure of a substrate processing device provided by an embodiment of the present invention, wherein arrows represent the movement direction during wafer processing;

[0022] Figure 3 for Figure 2 Schematic diagram of the enlarged structure of the accommodating cavity in the middle dotted frame.

[0023] Among them, the reference numerals in the figures are:

[0024] 1-wafer; 2-reaction chamber; 3-accommodating chamber; 4-heating device; 5-base; 6-gas concentration detector; 7-controller; 8-wafer box; 31-gas charging port; 32-gas exhaust port. DETAILED DESCRIPTION

[0025] To make the purpose, technical solutions, and advantages of the embodiments of the present invention more clear, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the embodiments described are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts shall fall within the scope of protection of the present invention.

[0026] In the description of the present invention, it should be understood that the terms "including" and "having" and any variations thereof used herein are intended to cover non-exclusive inclusions. For example, a process, method, system, product or apparatus comprising a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to these processes, methods, products or apparatuses.

[0027] It should be understood that the terms "length", "width", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention.

[0028] In addition, the terms "first" and "second" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. It should be understood that the term "and / or" used in this article is merely a description of the association relationship of associated objects, indicating that three relationships may exist. For example, A and / or B can mean: A exists alone, A and B exist at the same time, and B exists alone. In the description of this utility model, unless otherwise specified, "multiple" means two or more.

[0029] In the existing wafer dry etching process, after the wafer is etched in the reaction chamber, some reaction gas will inevitably be adsorbed or remain on the surface. These residual reaction gases will be transferred back to the wafer box along with the wafer. After the wafer is dry-etched and returned to the wafer box, the reaction gas remaining on the wafer will slowly evaporate. The volatilized reaction gas reacts with the surfaces of other unetched wafers in the wafer box, causing wafer defects. Moreover, this defect will have a cumulative effect, resulting in the last wafer to be processed in the wafer box having the most serious defects. Figure 1This is a schematic diagram showing the cumulative effect of wafer defects in a wafer cassette as the number of wafers dry-etched increases in the prior art. After wafer #1 is etched and placed in the cassette, the residual reaction gas slowly evaporates, causing defects in wafers #2, #3, and #4. As the number of wafers etched in the cassette increases, the defects of the unetched wafers in the cassette accumulate. This application addresses the above issues and provides a substrate processing device and a substrate processing system.

[0030] The substrate processing equipment and substrate processing system provided by the present invention are described in detail below with reference to specific embodiments.

[0031] Figure 2 A schematic diagram of the structure of a substrate processing device provided by an embodiment of the present invention, wherein arrows represent the movement direction during wafer processing; Figure 3 for Figure 2 For the enlarged structural diagram of the accommodating cavity in the dotted box, please refer to Figure 2 and Figure 3 , the first aspect of this embodiment provides a substrate processing device. The substrate of the substrate processing device of this embodiment is introduced by taking the wafer processing device as an example, but the substrate is not limited to the wafer 1, and can also include other types of substrates. The substrate processing device includes a reaction chamber 2 and a accommodating chamber 3. The reaction chamber 2 is used for dry etching of the wafer 1. The accommodating chamber 3 is used to accommodate the wafer 1 after the dry etching of the reaction chamber 2 is completed. The accommodating chamber 2 is provided with an inflation port 31 and an exhaust port 32. The inflation port 31 is used to be connected to a inflation device so that the accommodating chamber is filled with a cleaning gas. The exhaust port 32 is used to be connected to an exhaust device so that the cleaning gas in the accommodating chamber 3 is exhausted.

[0032] The substrate processing equipment of this embodiment is a dry etching equipment for wafers. The substrate processing equipment includes a reaction chamber 2 and a receiving chamber 3. The reaction chamber 2 is used for dry etching of the wafer 1. The reaction chamber 2 of this embodiment uses plasma or reactive gas to etch the surface material of the wafer 1 in a vacuum environment. The specific process of dry etching includes plasmaizing the relevant gas in a vacuum environment to form effective ionized etching reactants. These ionized substances undergo physical and chemical reactions with the surface of the wafer 1 to form gaseous products, thereby removing the target material. The reaction chamber 2 of this embodiment is a plasma reaction chamber in the prior art. This embodiment does not impose any special restrictions on the specific structure and size of the reaction chamber 2.

[0033] The accommodating chamber 3 of this embodiment is used to accommodate the wafer 1 after dry etching in the reaction chamber 2. The accommodating chamber 3 is provided with a gas filling port 31 and a gas extraction port 32. When the accommodating chamber 3 is in use, the gas filling port 31 is used to connect to the gas filling device to fill the accommodating chamber 3 with cleaning gas, and the gas extraction port 32 is used to connect to the gas extraction device to extract the cleaning gas after cleaning the wafer 1 in the accommodating chamber 3. The accommodating chamber 3 of this embodiment is used to clean the wafer 1 after dry etching in the reaction chamber 2. This embodiment does not impose any special restrictions on the structure and size of the accommodating chamber 3. This embodiment does not impose any special restrictions on the specific position and size of the gas filling port 31 and the gas extraction port 32. The cleaning gas in this embodiment can be an inert gas or nitrogen or other gas that does not chemically react with most substances under standard conditions.

[0034] When the wafer processing equipment of this embodiment is in use, the wafer 1 is first placed in the reaction chamber 2 for plasma etching. After the etching is completed, the wafer 1 is taken out from the reaction chamber 2. After the wafer 1 is taken out, the wafer 1 is placed in the accommodating chamber 3. After the wafer 1 is placed in the accommodating chamber 3, the inflation device connected to the inflation port 31 is started to fill the accommodating chamber 3 with cleaning gas, and at the same time, the exhaust device connected to the exhaust port 32 is started to exhaust the cleaning gas after flushing the wafer 1 from the accommodating chamber 3. After the wafer 1 is cleaned, the wafer 1 is transferred from the accommodating chamber 3 to the wafer box 8.

[0035] In the existing dry etching process of wafer 1, after the wafer 1 is etched in the reaction chamber 2, some reaction gases will inevitably be adsorbed or remain on the surface, and these residual reaction gases will be transferred back to the wafer box 8 along with the wafer 1. After the wafer 1 is dry-etched and transferred back to the wafer box 8, the reaction gases remaining on the wafer 1 will slowly evaporate. The volatilized reaction gases react with the surfaces of other unetched wafers 1 in the wafer box 8, causing defects in the wafer 1. Moreover, such defects will have a cumulative effect, resulting in the most serious defects on the last wafer 1 to be processed in the wafer box 8. After the dry etching treatment of the wafer 1 is completed, the reaction chamber 2 of this embodiment can clean away the reaction gases adsorbed or remaining on the surface of the wafer 1 through the accommodating chamber 3. After the wafer 1 processed by the accommodating chamber 3 is transferred back to the wafer box 8, it can reduce or avoid contamination of the unetched wafer 1, resulting in defects in the wafer 1.

[0036] The substrate processing equipment provided in this embodiment includes a reaction chamber 2 and a receiving chamber 3, wherein the reaction chamber 2 is used for dry etching of the substrate, and the receiving chamber 3 is used to receive the substrate after the dry etching of the reaction chamber 2 is completed. The receiving chamber 3 is provided with an inflation port 31 and an exhaust port 32, wherein the inflation port 31 is used to be connected to a inflation device so that the receiving chamber 3 is filled with a cleaning gas, and the exhaust port 32 is used to be connected to a exhaust device so that the cleaning gas in the receiving chamber 3 is exhausted. The accommodating chamber 3 of the substrate processing equipment is used to accommodate the wafer 1 after dry etching is completed in the reaction chamber 2. The accommodating chamber 3 is provided with an inflation port 31 and an exhaust port 32. The wafer 1 after dry etching can be cleaned in the accommodating chamber 3 by the cleaning gas filled in through the inflation port 31, and the gas after cleaning is exhausted through the exhaust port 32. The accommodating chamber 3 of the substrate processing equipment can clean away the reaction gas adsorbed or residual on the surface of the wafer 1 after the etching process of the wafer 1 is completed, so as to avoid the problem that the reaction gas adsorbed or residual on the surface of the wafer 1 contaminates the unetched wafer 1 after the wafer 1 is transferred to the wafer box 8, causing defects in the wafer 1.

[0037] In one embodiment, see Figure 3 The substrate processing apparatus further includes a heating device 4 for heating the accommodating chamber 3. This embodiment, by providing the heating device 4 to heat the gas within the accommodating chamber 3, can accelerate the volatilization of reactive gases adsorbed or remaining on the surface of the wafer 1, speed up the cleaning of the wafer 1, and improve the efficiency of the substrate processing apparatus. This embodiment does not impose any particular restrictions on the specific structure of the heating device 4; illustratively, the heating device 4 can be an electric heating device 4.

[0038] Specifically, a base 5 for placing a substrate is provided within the accommodating chamber 3, and the heating device 4 includes a heating disk disposed around the base 5 and below the supporting surface of the base 5. The heating device 4 of this embodiment includes a heating disk disposed around the base 5, and the heating element of the heating device is close to the wafer 1 to be heated, which can further accelerate the volatilization of the reaction gas adsorbed or residual on the surface of the wafer 1. Preferably, the heating disk is disposed below the supporting surface of the base 5 to more quickly heat the wafer 1 on the supporting surface.

[0039] In one embodiment, see Figure 2 and Figure 3, a gas concentration detector 6 is provided in the accommodating chamber 3, and the gas concentration detector 6 is used to detect the concentration of the cleaning gas. In this embodiment, a gas concentration detector 6 is provided inside the accommodating chamber 3. During the process of cleaning the wafer 1 with the cleaning gas, the gas concentration detector 6 detects the concentration of the cleaning gas, and stops the inflation of the inflation device when the concentration of the cleaning gas detected by the gas concentration detector 6 reaches a preset value. By providing the gas concentration detector 6, this embodiment can timely understand the cleaning status of the wafer 1 in the accommodating chamber 3, and avoid the phenomenon of energy waste caused by the reaction gas adsorbed or residual on the surface of the wafer 1 not being completely cleaned or over-cleaned. The gas concentration detector 6 of this embodiment is a gas concentration detector 6 in the prior art, and its principle is not elaborated in this embodiment.

[0040] Furthermore, the substrate processing apparatus further includes a controller 7, which is electrically connected to the exhaust device, the inflation device, the gas concentration detector 6, and the heating device 4. The controller 7 is configured to control the inflation device, the exhaust device, and the heating device 4 to shut down after the concentration of the cleaning gas detected by the gas concentration detector 6 reaches a preset value. This embodiment, by providing the controller 7 connected to the exhaust device, the inflation device, the gas concentration detector 6, and the heating device 4, facilitates automatic control of the operation of the exhaust device, the inflation device, and the heating device 4, thereby achieving automated control of the substrate processing apparatus.

[0041] In the above embodiment, please refer to Figure 2 , the number of the reaction chambers 2 is multiple, the number of the accommodating chambers 3 is the same as the number of the reaction chambers 2, and the accommodating chambers 3 are arranged in a one-to-one correspondence with the reaction chambers 2. The number of reaction chambers 2 of the substrate processing equipment of this embodiment is multiple, and multiple reaction chambers 2 perform dry etching at the same time, which can improve the processing efficiency of the wafer 1. The number of accommodating chambers 3 is the same as the number of reaction chambers 2, which improves the efficiency of cleaning the wafer 1 after etching. This embodiment does not impose any special restrictions on the specific number of the reaction chambers 2 and the accommodating chambers 3. In this embodiment, the accommodating chambers 3 are arranged in a one-to-one correspondence with the reaction chambers 2. After the wafer 1 is processed by the reaction chamber 2, it is directly placed in the corresponding accommodating chamber 3 for cleaning, which can improve the cleaning efficiency of the wafer 1.

[0042] Optionally, the reaction chamber 2 and the accommodating chamber 3 are arranged opposite to each other, or the reaction chamber 2 and the accommodating chamber 3 are arranged adjacent to each other. This embodiment does not impose any particular restrictions on the specific arrangement positions of the reaction chamber 2 and the accommodating chamber 3, and technicians can preset them in advance according to actual needs.

[0043] See also Figure 2 and Figure 3The substrate processing equipment of this embodiment includes an air pump and an air extraction pump. The air pump is connected to the air filling port 31, and the air extraction pump is connected to the air extraction port 32. The air filling port 31 is located at the upper part of the accommodating chamber 3, and the air extraction port 32 is located at the bottom of the accommodating chamber 3. In this embodiment, the air filling port 31 is arranged at the top of the accommodating chamber 3, and the air extraction port 32 is arranged at the bottom of the accommodating chamber 3. When gas is filled into the accommodating chamber 3 to clean the reactive gas adsorbed or residual on the surface of the wafer 1, the cleaning gas is blown in from the top of the accommodating chamber 3, and the cleaning gas is extracted from the bottom of the accommodating chamber 3. The air pressure of the air pump and the air extraction pressure of the air extraction pump provide a downward pressure on the wafer 1, which can ensure that the wafer 1 is not blown off the base 5 during the cleaning process.

[0044] The substrate processing equipment provided by the embodiment of the present invention includes a reaction chamber and a receiving chamber, wherein the reaction chamber is used for dry etching of substrates, the receiving chamber is used to receive substrates after dry etching of the reaction chamber, the receiving chamber is provided with a gas filling port and a gas extraction port, the gas filling port is used to connect with a gas filling device so that the receiving chamber is filled with cleaning gas, and the gas extraction port is used to connect with a gas extraction device so that the cleaning gas in the receiving chamber is extracted. The receiving chamber of the substrate processing equipment is used to receive wafers after dry etching of the reaction chamber, the receiving chamber is provided with a gas filling port and a gas extraction port, the wafers after dry etching can be cleaned in the receiving chamber by the cleaning gas filled in the gas filling port, and the gas after cleaning is extracted through the gas extraction port. The receiving chamber of the substrate processing equipment can clean the reaction gas adsorbed or residual on the surface of the wafer after the wafer etching process is completed, thereby avoiding the problem that the reaction gas adsorbed or residual on the surface of the wafer contaminates the unetched wafer after the wafer is transferred to the wafer box, causing wafer defects.

[0045] A second aspect of this embodiment provides a substrate processing system, including a substrate processing device, wherein the substrate processing device is the substrate processing device described in the above embodiment.

[0046] For example: the substrate processing equipment includes a reaction chamber and a receiving chamber;

[0047] The reaction chamber is used for dry etching of the substrate, and the accommodating chamber is used to accommodate the substrate after the dry etching of the reaction chamber is completed. The accommodating chamber is provided with an inflation port and an exhaust port. The inflation port is used to be connected to the inflation device so that the accommodating chamber is filled with cleaning gas, and the exhaust port is used to be connected to the exhaust device so that the cleaning gas in the accommodating chamber is exhausted.

[0048] The substrate processing system provided by an embodiment of the present invention includes a substrate processing device, which includes a reaction chamber and a receiving chamber. The reaction chamber is used for dry etching of the substrate, and the receiving chamber is used to receive the substrate after the dry etching of the reaction chamber is completed. The receiving chamber is provided with an inflation port and an exhaust port. The inflation port is used to be connected to a inflation device so that the receiving chamber is filled with a cleaning gas, and the exhaust port is used to be connected to a exhaust device so that the cleaning gas in the receiving chamber is exhausted. The accommodating chamber of the substrate processing equipment is used to accommodate wafers after dry etching in the reaction chamber. The accommodating chamber is provided with an air filling port and an air exhaust port. The wafers after dry etching can be cleaned in the accommodating chamber by the cleaning gas filled into the accommodating chamber through the air filling port, and the gas after cleaning is exhausted through the air exhaust port. The accommodating chamber of the substrate processing equipment can clean away the reaction gas adsorbed or residual on the surface of the wafer after the wafer etching process is completed, thereby avoiding the problem that the reaction gas adsorbed or residual on the surface of the wafer contaminates the unetched wafer after the wafer is transferred to the wafer box, causing wafer defects.

[0049] In the above description, the reference terms "one embodiment", "some embodiments", "example", "specific example", etc. mean that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art can combine and combine different embodiments or examples described in this specification and features of different embodiments or examples without contradiction.

[0050] The above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the above embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A substrate processing device, characterized in that: include: Reaction chamber and accommodating chamber; The reaction chamber is used for dry etching of the substrate, and the accommodating chamber is used to accommodate the substrate after the dry etching of the reaction chamber is completed. The accommodating chamber is provided with an inflation port and an exhaust port. The inflation port is used to be connected to the inflation device so that the accommodating chamber is filled with cleaning gas, and the exhaust port is used to be connected to the exhaust device so that the cleaning gas in the accommodating chamber is exhausted.

2. The substrate processing equipment according to claim 1, characterized in that It also includes a heating device, which is used to heat the accommodating cavity.

3. The substrate processing equipment according to claim 2, characterized in that A base for placing a substrate is provided in the accommodating cavity, and the heating device includes a heating disk. The heating disk is arranged around the base and is arranged below the supporting surface of the base.

4. The substrate processing equipment according to claim 3, characterized in that A gas concentration detector is provided in the accommodating chamber, and the gas concentration detector is used to detect the concentration of the cleaning gas.

5. The substrate processing equipment according to claim 4, characterized in that It also includes a controller, which is electrically connected to the exhaust device, the inflation device, the gas concentration detector and the heating device. The controller is used to control the inflation device, the exhaust device and the heating device to shut down after the concentration of the cleaning gas detected by the gas concentration detector reaches a preset value.

6. The substrate processing equipment according to claim 1, wherein There are multiple reaction chambers, and the number of the accommodating chambers is the same as the number of the reaction chambers.

7. The substrate processing equipment according to claim 6, characterized in that The reaction chamber and the accommodating chamber are arranged opposite to each other, or the reaction chamber and the accommodating chamber are arranged adjacent to each other.

8. The substrate processing equipment according to claim 1, wherein: It also includes an air pump and an air extraction pump, the air pump is connected to the air filling port, the air extraction pump is connected to the air extraction port, the air filling port is located at the top of the accommodating cavity, and the air extraction port is located at the bottom of the accommodating cavity.

9. The substrate processing equipment according to any one of claims 1 to 8, characterized in that: The cleaning gas is nitrogen or an inert gas.

10. A substrate processing system, characterized in that: It comprises a substrate processing device, and the substrate processing device is the substrate processing device according to any one of claims 1-9.

Images