Temperature field stabilizing device and vertical liquid phase epitaxy system

Abstract

The utility model provides a temperature field stabilizing device and a vertical liquid phase epitaxy system, and relates to the technical field of semiconductor material preparation. The vertical liquid phase epitaxy system comprises a graphite pull rod, a cold water disc and a graphite crucible, the temperature field stabilizing device comprises a shell, the shell is provided with a through hole penetrating from one end of the shell to the other end of the shell, and the shell is arranged on the graphite pull rod in a sleeving mode through the through hole and located between the cold water disc and the graphite crucible. An annular containing groove surrounding the through hole is formed in the end, close to the cold water disc, of the shell. In the process of growing the tellurium-cadmium-mercury thin film on the substrate, mercury steam in a growing area (namely a graphite crucible) continuously moves towards a low-temperature area (namely a cold water disc) above and is condensed into liquid mercury beads in the low-temperature area, and when the liquid mercury beads drop, the liquid mercury beads are received by an annular containing groove in a shell and cannot reach a high-temperature area (namely the graphite crucible) below. On the basis, the temperature field of the growth region can be more balanced, and the regulation and control difficulty of growth data of the tellurium-cadmium-mercury thin film is reduced.

Description

Technical Field

[0001] The present application relates to the technical field of semiconductor material preparation, and in particular to a temperature field stabilization device and a vertical liquid phase epitaxy system. Background Art

[0002] Liquid phase epitaxy (LPE) is a method of growing single-crystalline thin films by precipitating a solid phase from a solution and depositing it on a substrate. It is primarily used in the manufacture of transistors, integrated circuits, photodetectors, and light-emitting diodes. While there are many LPE methods, such as tilted, vertical, and slide-boat methods, vertical LPE systems (i.e., vertical methods) have become the most widely used in recent years.

[0003] In related technologies, vertical liquid phase epitaxy systems typically use a mercury cadmium telluride solution to grow a mercury cadmium telluride thin film on a substrate. The system has a low-temperature zone at the top and a high-temperature zone (also known as a growth zone) at the bottom. The low-temperature zone mainly includes a cooling water system, and the growth zone mainly includes a graphite crucible, which is used to hold the mercury cadmium telluride solution. When growing HgCdTe thin films, the substrate can be inserted into a graphite crucible and immersed in a HgCdTe solution while maintaining appropriate temperature and pressure. After a period of time, the HgCdTe film growth can be completed on the substrate. However, because the mercury vapor pressure around the growth zone must be very close to the equilibrium mercury vapor pressure of the HgCdTe solution (i.e., the mercury vapor pressure in the growth zone is greater), the mercury vapor in the growth zone will continuously move toward the lower-temperature zone above and condense into liquid mercury beads in the lower-temperature zone. As the size of the liquid mercury beads increases, the liquid mercury beads will fall back to the higher-temperature zone below under the action of gravity. This not only affects the intensity of thermal radiation heating of the HgCdTe solution, but also causes fluctuations in the temperature difference between the HgCdTe solution and the temperature control point, causing the temperature field in the growth zone to be unbalanced and increasing the difficulty of controlling the HgCdTe film growth data. Utility Model Content

[0004] The present application provides a temperature field stabilization device and a vertical liquid phase epitaxy system, which aim to solve the problem of temperature field imbalance in the growth zone of the vertical liquid phase epitaxy system in the related art.

[0005] In order to solve the above-mentioned disadvantages existing in the related art, the first aspect of the present application provides a temperature field stabilization device, which is applied to a vertical liquid phase epitaxy system. The vertical liquid phase epitaxy system includes a graphite pull rod, a fixed frame, a cold water tray for accommodating cooling water, and a graphite crucible for accommodating a mercury cadmium telluride solution. The cold water tray is arranged above the graphite crucible, the graphite pull rod is slidably arranged between the cold water tray and the graphite crucible, the fixed frame is arranged on one end of the graphite pull rod close to the graphite crucible, the fixed frame is used to fix the substrate, and the graphite pull rod is used to extend the fixed frame into the graphite crucible under the action of external force and immerse the substrate in the mercury cadmium telluride solution to grow a mercury cadmium telluride thin film on the substrate. Specifically, the temperature field stabilization device includes a shell, which has a through hole running from one end to the other end. The shell is sleeved on the graphite pull rod through the through hole. An annular receiving groove surrounding the through hole is opened at one end of the shell close to the cold water pan. The annular receiving groove is used to receive liquid mercury beads dripping from above during the growth of the mercury cadmium telluride film.

[0006] In some implementations, the housing includes an inner cylinder, an outer cylinder, a bottom plate, and a cover plate. The inner cylinder is disposed within and separated from the outer cylinder. The bottom plate covers the end of the outer and inner cylinders near the graphite crucible. The bottom plate has a lower through-hole connected to the inner cylinder. The cover plate covers the end of the outer and inner cylinders near the cold water pan. The cover plate has an upper through-hole connected to the inner cylinder. The upper through-hole, the inner cylinder, and the lower through-hole combine to form a through hole. An annular receiving groove is located on the cover plate. Furthermore, quartz wool is filled between the inner and outer cylinders.

[0007] In some implementations, an annular protrusion surrounding the upper through hole is formed on the side of the cover plate where the annular receiving groove is not provided. The annular protrusion is used to insert into the inner cylinder and make the inner cylinder abut against the side of the cover plate where the annular receiving groove is not provided when the cover plate is placed on the outer cylinder and the inner cylinder.

[0008] In some implementations, an annular protrusion surrounding the upper through hole is formed on the side of the cover plate where the annular receiving groove is not provided, an internal thread is provided on the inner wall of the annular protrusion, and an external thread is provided on the outer wall of the inner cylinder near the cold water pan. The internal thread is used to threadably cooperate with the external thread when the cover plate is provided on the outer cylinder and the inner cylinder.

[0009] In some implementations, an annular protrusion surrounding the upper through-hole is formed on the side of the cover plate that is not provided with the annular receiving groove. A limit block is formed on the inner wall of the annular protrusion. A limit groove is provided on the outer wall of the inner tube near the cold water pan. The limit block is configured to be inserted into the limit groove when the cover plate is attached to the outer and inner tubes. In one or more of these implementations, there are multiple limit blocks and multiple limit grooves. The multiple limit blocks surround the axis of the annular protrusion and are spaced apart on the inner wall of the annular protrusion. The multiple limit grooves surround the axis of the inner tube and are spaced apart on the outer wall of the inner tube near the cold water pan.

[0010] In some implementations, an annular protrusion surrounding the upper through hole is formed on the side of the cover plate where the annular receiving groove is not provided, and an annular slot is provided on the outer wall of the inner cylinder near the cold water pan. The annular protrusion is used to be inserted into the annular slot when the cover plate is placed on the outer cylinder and the inner cylinder.

[0011] The second aspect of the present application provides a vertical liquid phase epitaxy system, which includes an epitaxial furnace, a graphite pull rod, a fixing frame for fixing a substrate, a graphite crucible for accommodating a mercury cadmium telluride solution, a cold water tray for accommodating cooling water, and the temperature field stabilization device provided in the first aspect of the present application. The graphite pull rod, the cold water tray, and the graphite crucible are all arranged in the epitaxial furnace, the cold water tray is located above the graphite crucible, the graphite pull rod is slidably arranged between the cold water tray and the graphite crucible, the fixing frame is arranged on one end of the graphite pull rod close to the graphite crucible, and the temperature field stabilization device is sleeved on the graphite pull rod. Specifically, the graphite pull rod is used to extend the fixing frame into the graphite crucible under the action of an external force and immerse the substrate in the mercury cadmium telluride solution to grow a mercury cadmium telluride thin film on the substrate; the temperature field stabilization device is used to receive liquid mercury beads dripping from above during the growth process of the mercury cadmium telluride thin film.

[0012] In some implementations, the vertical liquid phase epitaxy system further includes a pot cover, the graphite crucible has a pot opening connected to the interior, the pot cover is used to cover the graphite crucible to close the pot opening, and the pot cover is provided with an inlet and outlet for the graphite pull rod and the fixing frame to pass through.

[0013] The temperature field stabilization device provided in the first aspect of the present application includes a housing having a through hole extending from one end to the other. The housing is sleeved on a graphite pull rod through the through hole and is located between a cold water pan and a graphite crucible. An annular receiving groove surrounding the through hole is defined at one end of the housing near the cold water pan. During the growth of a mercury cadmium telluride thin film on a substrate, mercury vapor in the growth zone (i.e., the graphite crucible) continuously moves toward the lower-temperature zone (i.e., the cold water pan) above, where it condenses into liquid mercury beads. Although the liquid mercury beads drip under gravity as their size increases, they do not reach the lower-temperature zone (i.e., the graphite crucible) below. Instead, they are received by the annular receiving groove in the housing (disposed between the lower and higher temperature zones). This prevents any impact on the intensity of the heat radiation heating of the mercury cadmium telluride solution and prevents fluctuations in the temperature difference between the mercury cadmium telluride solution and the temperature control point, resulting in a more balanced temperature field in the growth zone and reducing the difficulty in controlling the growth data of the mercury cadmium telluride film.

[0014] For the vertical liquid phase epitaxy system provided in the second aspect of the present application, since it applies the temperature field stabilization device provided in the first aspect of the present application, the vertical liquid phase epitaxy system has all the advantages of the temperature field stabilization device provided in the first aspect of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] In order to more clearly illustrate the relevant technologies or the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for the description of the relevant technologies or the embodiments of the present application. Obviously, the drawings described below are only some embodiments of the present application, not all embodiments. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0016] Figure 1 A schematic structural diagram of a vertical liquid phase epitaxy system provided in an embodiment of the present application;

[0017] Figure 2 Schematic diagram of the structure of the temperature field stabilization device provided in the embodiment of the present application at different viewing angles;

[0018] Figure 3 Schematic diagram of the structure of the cover provided in the embodiment of the present application at different viewing angles.

[0019] The symbols in the above drawings represent:

[0020] 1- epitaxial furnace, 2- graphite pull rod, 3- cold water tray, 4- graphite crucible, 5- temperature field stabilizing device, 6- pot cover, 51- inner cylinder, 52- outer cylinder, 53- bottom plate, 54- cover plate, 55- through hole, 56- quartz wool, 541- annular receiving groove, 542- upper through hole, 543- annular protrusion. DETAILED DESCRIPTION

[0021] In the related art, a vertical liquid phase epitaxy system typically uses a mercury cadmium telluride solution to grow a mercury cadmium telluride thin film on a substrate. The vertical liquid phase epitaxy system has a low-temperature zone located at the top and a high-temperature zone (also known as a growth zone) located at the bottom. The low-temperature zone mainly includes a cooling water system, and the growth zone mainly includes a graphite crucible, which is used to accommodate the mercury cadmium telluride solution. When growing the mercury cadmium telluride thin film, since the mercury vapor pressure around the growth zone must be very close to the mercury equilibrium vapor pressure of the mercury cadmium telluride solution (that is, the mercury vapor pressure in the growth zone is larger), the mercury vapor in the growth zone will continuously move toward the low-temperature zone above and condense into liquid mercury beads in the low-temperature zone. As the size of the liquid mercury beads increases, the liquid mercury beads will fall back to the high-temperature zone below under the action of gravity. This will not only affect the intensity of the heating of the mercury cadmium telluride solution by thermal radiation, but also cause fluctuations in the temperature difference between the mercury cadmium telluride solution and the temperature control point, causing the temperature field in the growth zone to be unbalanced, and also increasing the difficulty of controlling the growth data of the mercury cadmium telluride film. In view of this, the present application proposes a temperature field stabilization device and a vertical liquid phase epitaxy system in the following embodiments to solve the above-mentioned drawbacks existing in the related art.

[0022] In order to make the purpose, technical solutions and advantages of the present application more obvious and easy to understand, the present application will be clearly and completely described below in conjunction with the embodiments of the present application and the corresponding drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements with the same or similar functions. It should be understood that the embodiments of the present application described below are only used to explain the present application and are not used to limit the present application, that is, based on the various embodiments of the present application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of this application. In addition, the technical features involved in the various embodiments of the present application described below can be combined with each other as long as they do not conflict with each other.

[0023] See also Figure 1 , Figure 1 Schematic diagram of the structure of a vertical liquid phase epitaxy system. This embodiment provides a vertical liquid phase epitaxy system, which includes an epitaxial furnace 1, a graphite pull rod 2, a fixing frame (not shown), a graphite crucible 4, a cold water tray 3, a pot cover 6, and a temperature field stabilization device 5. The graphite pull rod 2, the fixing frame, the graphite crucible 4, the cold water tray 3, the pot cover 6, and the temperature field stabilization device 5 are all disposed in the epitaxial furnace 1. The cold water tray 3 is located above and separated from the graphite crucible 4. The graphite pull rod 2 is slidably disposed between the cold water tray 3 and the graphite crucible 4. The fixing frame is disposed on the end of the graphite pull rod 2 closest to the graphite crucible 4. The temperature field stabilization device 5 is sleeved on the graphite pull rod 2. The graphite crucible 4 has a pot opening connected to the interior. The pot cover 6 is used to cover the graphite crucible 4 to seal the pot opening. The pot cover 6 has an inlet and outlet corresponding to the graphite pull rod 2 (not shown).

[0024] Specifically, the fixing frame is used to fix the substrate; the graphite crucible 4 is used to accommodate the mercury cadmium telluride solution; the cold water tray 3 is used to accommodate cooling water; the graphite pull rod 2 is used to drive the fixing frame and the substrate thereon to slide toward the graphite crucible 4 under the action of an external force, so as to send the fixing frame and the substrate thereon into the graphite crucible 4 through the inlet and outlet on the pot cover 6, and immerse the substrate in the mercury cadmium telluride solution in the graphite crucible 4, so that the mercury cadmium telluride solution in the graphite crucible 4 can be used to grow a mercury cadmium telluride thin film on the substrate; the temperature field stabilization device 5 is used to receive liquid mercury beads dripping from above during the growth process of the mercury cadmium telluride thin film. Of course, after the growth of the mercury cadmium telluride film is completed, the graphite pull rod 2 can drive the fixed frame and the substrate thereon to slide out of the graphite crucible 4 under the action of external force to move the fixed frame and the substrate thereon out of the graphite crucible 4; moreover, the liquid mercury beads received by the temperature field stabilizing device 5 can be water-sealed and recovered, and then the temperature field stabilizing device 5 can be wiped clean for the next use of the temperature field stabilizing device 5.

[0025] In this embodiment, the epitaxial furnace 1 functions to support and secure the graphite pull rods 2, graphite crucible 4, temperature field stabilization device 5, and cold water pan 3, and to provide space and a suitable temperature environment for growing HgCdTe thin films on substrates. It is understood that temperature is a critical factor in the epitaxial growth of HgCdTe films. Different material systems (HgCdTe is used in this embodiment) may require different temperature ranges to ensure the orderly deposition of atoms or molecules on the substrate surface. The epitaxial furnace 1 precisely controls the temperature of the growth zone and maintains temperature fluctuations within a very small range, typically achieving an accuracy of ±1°C or even higher. Furthermore, uneven temperature can lead to inconsistent growth rates of the HgCdTe film, resulting in uneven thickness and lattice defects. The epitaxial furnace 1, through its specialized heating structure and heat conduction design, creates a uniform temperature field on the substrate surface, which is crucial for growing high-quality, uniform HgCdTe films.

[0026] Specifically, during the epitaxial growth of a HgCdTe film, the epitaxial furnace 1 needs to complete a series of operations, including heating, maintaining a constant temperature, and cooling. Specifically, after introducing the HgCdTe solution into the graphite crucible 4 and securing the substrate on the mounting frame, the graphite crucible 4 can be heated according to a set temperature curve so that the HgCdTe solution in the graphite crucible 4 reaches and maintains a suitable temperature. The mounting frame and the substrate thereon are fed into the graphite crucible 4 via the graphite pull rod 2 so that the substrate is immersed in the HgCdTe solution in the graphite crucible 4, thereby growing a HgCdTe film on the substrate. After a period of time, the HgCdTe film growth is complete and the temperature can be cooled. By controlling the cooling rate, the HgCdTe film can be stably formed, thereby improving the quality and performance of the HgCdTe film. It should be noted that different types of epitaxial furnaces 1 may differ in structure and specific performance, but the overall goal is to provide precisely controllable temperature conditions to meet the requirements of liquid phase epitaxial growth, thereby obtaining high-quality and high-performance HgCdTe films.

[0027] In this embodiment, in addition to the epitaxial furnace 1, a cooling water pan 3 is also provided for temperature control, and the cooling water pan 3 is responsible for cooling the HgCdTe film after growth is complete. It is understood that during the epitaxial growth of the HgCdTe film, the cooling water pan 3, leveraging its cooling function and cooperating with the epitaxial furnace 1, can stabilize the furnace body temperature near the set value, reducing temperature fluctuations and thereby preventing crystal structure defects or compositional inhomogeneities in the HgCdTe film. Furthermore, during the cooling process after HgCdTe film growth is complete, different HgCdTe film growth processes may require different cooling rates (for example, slow and uniform cooling helps reduce thermal stress within the HgCdTe film). The cooling water pan 3 can precisely control the cooling rate and, based on process requirements, can achieve the desired cooling rate by adjusting parameters such as the cooling water flow rate, thereby improving the quality and performance of the HgCdTe film.

[0028] As can be seen from the above, when a mercury cadmium telluride thin film is grown on a substrate, the mercury vapor in the growth zone (i.e., the graphite crucible 4) will continuously move toward the low-temperature zone above (i.e., the cold water pan 3) and condense into liquid mercury beads in the low-temperature zone. Although the liquid mercury beads will drip under the action of gravity as their size increases, the dripping liquid mercury beads will not reach the high-temperature zone below (i.e., the graphite crucible 4), but will be received by the temperature field stabilization device 5. This can avoid affecting the intensity of the thermal radiation heating of the mercury cadmium telluride solution, and will not cause fluctuations in the temperature difference between the mercury cadmium telluride solution and the temperature control point, making the temperature field in the growth zone more balanced and reducing the difficulty of controlling the growth data of the mercury cadmium telluride film.

[0029] In some embodiments, please combine Figure 2 , Figure 2 Schematic diagrams of the structure of the temperature field stabilization device from different perspectives are shown. The temperature field stabilization device 5 includes a housing (not shown) having a through hole 55 extending from one end to the other. The housing is mounted on the graphite pull rod 2 via the through hole 55. An annular receiving groove 541 surrounding the through hole 55 is defined at the end of the housing near the cold water pan 3. Furthermore, it should be noted that the cross-sectional shape of the housing can be any common shape in the art, such as circular, elliptical, triangular, rectangular, trapezoidal, or other polygonal shapes. The specific shape can be selected based on actual needs and is not a sole limitation in this application. Preferably, the housing is cylindrical, i.e., the cross-sectional shape of the housing is circular. It should also be noted that the housing has excellent thermal insulation and heat-insulating properties, which is due to the housing being made of materials with excellent thermal insulation and heat-insulating properties, such as high-purity quartz, rock wool, glass fiber, polystyrene foam, polyurethane foam, ceramic fiber, silica aerogel, etc. The specific material used for the housing can be selected based on actual needs and is not a sole limitation in this application.

[0030] Specifically, the annular receiving groove 541 is used to receive liquid mercury beads dripping from above during the growth of the HgCdTe film. That is, when the HgCdTe film is grown on the substrate, mercury vapor in the growth zone (i.e., the graphite crucible 4) continuously moves toward the upper, lower-temperature zone (i.e., the cold water pan 3), where it condenses into liquid mercury beads. Although the liquid mercury beads drip under gravity as they grow in size, they do not reach the lower, higher-temperature zone (i.e., the graphite crucible 4). Instead, they are received by the annular receiving groove 541 on the housing and prevented from dripping into the lower, higher-temperature zone (i.e., the graphite crucible 4). This prevents any impact on the intensity of the HgCdTe solution's radiant heating and prevents fluctuations in the temperature difference between the HgCdTe solution and the temperature control point. This results in a more balanced temperature field in the growth zone and reduces the difficulty in controlling the HgCdTe film growth data.

[0031] In one or more embodiments, the housing includes an inner cylinder 51, an outer cylinder 52, a bottom plate 53, and a cover plate 54. The inner cylinder 51 is disposed within the outer cylinder 52, spaced apart from the outer cylinder 52. The bottom plate 53 covers the ends of the outer and inner cylinders 52 and 51 near the graphite crucible 4. The bottom plate 53 has a lower through-hole (not shown) connected to the inner cylinder 51. The cover plate 54 covers the ends of the outer and inner cylinders 52 and 51 near the cold water pan 3. The cover plate 54 has an upper through-hole 542 connected to the inner cylinder 51. The upper through-hole 542, the inner cylinder 51, and the lower through-hole combine to form a through-hole 55. An annular receiving groove 541 is located on the side of the cover plate 54 near the cold water pan 3. Preferably, the inner cylinder 51, the outer cylinder 52, the bottom plate 53, and the cover plate 54 are all made of high-purity quartz.

[0032] It is understood that although the inner cylinder 51 is disposed within the outer cylinder 52, the two are spaced apart, forming an annular cavity (not shown) between the inner cylinder 51 and the outer cylinder 52. Based on this, the annular cavity can be filled with quartz wool 56. Quartz wool 56 has excellent heat resistance and high strength retention at high temperatures, which can stabilize the temperature field of the shell. Of course, in other embodiments, quartz wool 56 can also be replaced with other commonly used and functionally equivalent materials in the art, such as zirconium phosphate ceramics and white corundum castables. The specific selection can be based on actual needs and is not limited to this application.

[0033] As can be seen from the above, the assembly process of the temperature field stabilizing device 5 is as follows: fill the annular cavity between the inner cylinder 51 and the outer cylinder 52 with quartz wool 56; after the quartz wool 56 is filled, the cover plate 54 is placed on the outer cylinder 52 and the inner cylinder 51 to close the annular cavity between the inner cylinder 51 and the outer cylinder 52. At this time, the upper through hole 542 of the cover plate 54, the lower through hole of the inner cylinder 51 and the bottom plate 53 will be combined into a through hole 55, thus completing the assembly of the shell, that is, completing the assembly of the temperature field stabilizing device 5; thereafter, the assembled shell is placed on the graphite pull rod 2 through the through hole 55, and the shell will slide along the graphite pull rod 2 into the epitaxial furnace 1, and finally fixed between the cold water plate 3 and the graphite crucible 4. It can be understood that the temperature field stabilizing device 5 of the present application is reasonably designed, the assembly process is simple, it is easy to disassemble and install, and it is highly practical.

[0034] As one or more examples, please combine Figure 3 , Figure 3The following are schematic diagrams of the cover plate structure from different viewing angles. On the side of the cover plate 54 that is not provided with the annular receiving groove 541 (i.e., the side away from the cold water pan 3), an annular protrusion 543 is formed that surrounds the upper through-hole 542. This annular protrusion 543 is used to insert into the inner tube 51 and abut the inner tube 51 against the cover plate 54 when the cover plate 54 is placed over the outer tube 52 and inner tube 51. In other words, when the cover plate 54 is placed over the ends of the outer tube 52 and inner tube 51 that are closer to the cold water pan 3, the annular protrusion 543 on the cover plate 54 will insert into the inner tube 51, and the end of the inner tube 51 that is closer to the cold water pan 3 will abut the side of the cover plate 54 that is not provided with the annular receiving groove 541. This ensures that the cover plate 54, inner tube 51, and outer tube 52 are relatively fixed, thereby reducing the risk of the cover plate 54 slipping off.

[0035] Alternatively, an internal thread (not shown) is formed on the inner wall of the annular protrusion 543, and an external thread (not shown) is formed on the outer wall of the inner tube 51 near the cold water pan 3. The internal thread is used to threadably engage with the external thread when the cover plate 54 is placed on the outer tube 52 and the inner tube 51. In other words, when the cover plate 54 is placed on the outer tube 52 and the end of the inner tube 51 near the cold water pan 3, the end of the inner tube 51 near the cold water pan 3 will be inserted into the annular protrusion 543 on the cover plate 54, and the external thread on the inner tube 51 will threadably engage with the internal thread on the annular protrusion 543. This ensures that the cover plate 54, the inner tube 51, and the outer tube 52 are relatively fixed, thereby reducing the risk of the cover plate 54 slipping off.

[0036] Alternatively, a stopper (not shown) is formed on the inner wall of the annular protrusion 543, and a stopper groove (not shown) is provided on the outer wall of the inner cylinder 51 near the cold water pan 3. The stopper is configured to be inserted into the stopper groove when the cover plate 54 is placed over the outer cylinder 52 and the inner cylinder 51. In other words, when the cover plate 54 is placed over the outer cylinder 52 and the end of the inner cylinder 51 near the cold water pan 3, the end of the inner cylinder 51 near the cold water pan 3 will be inserted into the annular protrusion 543 on the cover plate 54. During the insertion of the inner cylinder 51 into the annular protrusion 543, the stopper on the annular protrusion 543 will enter the stopper groove on the inner cylinder 51. This ensures that the cover plate 54, the inner cylinder 51, and the outer cylinder 52 are relatively fixed, thereby reducing the risk of the cover plate 54 slipping off.

[0037] Preferably, the limit blocks and limit grooves are both included in plurality, and the plurality of limit blocks surround the axis of the annular protrusion 543 and are spaced apart on the inner wall of the annular protrusion 543, and the plurality of limit grooves surround the axis of the inner cylinder 51 and are spaced apart on the outer wall of the inner cylinder 51 near the cold water pan 3. In this case, when the cover plate 54 is covered on the outer cylinder 52 and one end of the inner cylinder 51 near the cold water pan 3, the plurality of limit blocks on the annular protrusion 543 will respectively enter the plurality of limit grooves on the inner cylinder 51, thereby further improving the stability of the assembly between the cover plate 54, the inner cylinder 51 and the outer cylinder 52.

[0038] Alternatively, an annular slot (not shown) circumferentially surrounding the axis of the inner tube 51 is formed on the outer wall of the inner tube 51 near the cold water pan 3. The annular protrusion 543 is configured to be inserted into the annular slot when the cover plate 54 is placed over the outer tube 52 and the inner tube 51. In other words, when the cover plate 54 is placed over the outer tube 52 and the end of the inner tube 51 near the cold water pan 3, the end of the inner tube 51 near the cold water pan 3 will be inserted into the annular protrusion 543 on the cover plate 54. Furthermore, during the insertion of the inner tube 51 into the annular protrusion 543, the annular protrusion 543 will enter the annular slot on the inner tube 51. This ensures that the cover plate 54, the inner tube 51, and the outer tube 52 are relatively fixed, thereby reducing the risk of the cover plate 54 slipping off.

[0039] The above embodiments are only preferred implementations of the present application, and are not the only limitations on the temperature field stabilization device 5 and the vertical liquid phase epitaxy system; in this regard, those skilled in the art can flexibly set them according to the actual application scenarios based on the above embodiments. It can be understood that through the implementation of the above embodiments of the present application, the temperature field stabilization device 5 includes a shell, and the shell has a through hole 55 that runs from one end to the other end of the shell. The shell is mounted on the graphite pull rod 2 through the through hole 55 and is located between the cold water plate 3 and the graphite crucible 4. An annular receiving groove 541 surrounding the through hole 55 is provided at one end of the shell close to the cold water plate 3; in the process of growing mercury cadmium telluride thin films on the substrate, the mercury vapor in the growth zone (i.e., the graphite crucible 4) will continuously move to the upper low-temperature zone (i.e., the cold water plate 3) and in the low-temperature zone The mercury beads condense into liquid mercury beads. Although the liquid mercury beads will drip under the action of gravity as their size increases, the dripping liquid mercury beads will not reach the high-temperature zone below (i.e., the graphite crucible 4), but will be received by the annular receiving groove 541 on the shell (disposed between the low-temperature zone and the high-temperature zone). This can avoid affecting the intensity of the heat radiation heating of the mercury cadmium telluride solution and will not cause fluctuations in the temperature difference between the mercury cadmium telluride solution and the temperature control point, making the temperature field in the growth zone more balanced and reducing the difficulty of controlling the growth data of the mercury cadmium telluride film.

[0040] It should be noted that the present application is described in a progressive manner in the several embodiments shown above, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the various embodiments can be referred to each other. It should also be noted that in the text description of the present application, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply that there is such an actual relationship or order between these entities or operations. Further, the terms "include", "comprise" or any other corresponding variants are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only these elements, but also other elements not explicitly listed, or elements inherent to such a process, method, article or device; and, in the absence of further restrictions, the elements defined by the sentence "including one..." do not exclude the presence of other identical elements in the process, method, article or device including the elements.

[0041] Furthermore, by implementing the several embodiments described above, those skilled in the art can implement or use the present application. Various modifications to the several embodiments described above will be readily apparent to those skilled in the art, and the general principles defined herein can be implemented in other embodiments not shown without departing from the spirit or scope of the present application. Therefore, the present application is not limited to the several embodiments described above, but rather is intended to conform to the broadest scope consistent with the principles and novel features disclosed herein.

Claims

1. A temperature field stabilization device, characterized in that: The invention is applied to a vertical liquid phase epitaxy system, comprising a graphite pull rod, a fixing frame, a cold water tray for accommodating cooling water, and a graphite crucible for accommodating a mercury cadmium telluride solution. The cold water tray is disposed above the graphite crucible, the graphite pull rod is slidably disposed between the cold water tray and the graphite crucible, the fixing frame is disposed on one end of the graphite pull rod close to the graphite crucible, the fixing frame is used to fix a substrate, and the graphite pull rod is used to extend the fixing frame into the graphite crucible under the action of an external force and immerse the substrate in the mercury cadmium telluride solution to grow a mercury cadmium telluride thin film on the substrate. The temperature field stabilization device includes a shell, which has a through hole extending from one end to the other end. The shell is sleeved on the graphite pull rod through the through hole. An annular receiving groove surrounding the through hole is formed at one end of the shell close to the cold water pan. The annular receiving groove is used to receive liquid mercury beads dripping from above during the growth of the mercury cadmium telluride film.

2. The temperature field stabilization device according to claim 1, characterized in that: The shell includes an inner cylinder, an outer cylinder, a bottom plate and a cover plate. The inner cylinder is arranged in the outer cylinder and separated from the outer cylinder. The bottom plate is covered on one end of the outer cylinder and the inner cylinder close to the graphite crucible. The bottom plate has a lower through hole connected to the inner cylinder. The cover plate is covered on one end of the outer cylinder and the inner cylinder close to the cold water pan. The cover plate has an upper through hole connected to the inner cylinder. The upper through hole, the inner cylinder and the lower through hole are combined to form the through hole. The annular receiving groove is located on the cover plate.

3. The temperature field stabilization device according to claim 2, characterized in that: The space between the inner cylinder and the outer cylinder is filled with quartz wool.

4. The temperature field stabilization device according to claim 2, characterized in that: An annular protrusion surrounding the upper through hole is formed on the side of the cover plate where the annular receiving groove is not provided. The annular protrusion is used to insert the inner cylinder and make the inner cylinder abut against the side of the cover plate where the annular receiving groove is not provided when the cover plate is covered on the outer cylinder and the inner cylinder.

5. The temperature field stabilization device according to claim 2, characterized in that: An annular protrusion surrounding the upper through hole is formed on the side of the cover plate where the annular receiving groove is not provided, and an internal thread is provided on the inner wall of the annular protrusion. An external thread is provided on the outer wall of the inner cylinder near the cold water pan, and the internal thread is used to threadably cooperate with the external thread when the cover plate is covered on the outer cylinder and the inner cylinder.

6. The temperature field stabilization device according to claim 2, characterized in that: An annular protrusion surrounding the upper through hole is formed on the side of the cover plate where the annular receiving groove is not provided, a limiting block is formed on the inner wall of the annular protrusion, and a limiting groove is provided on the outer wall of the inner cylinder near the cold water pan, and the limiting block is used to be inserted into the limiting groove when the cover plate is provided on the outer cylinder and the inner cylinder.

7. The temperature field stabilization device according to claim 6, characterized in that: The limit blocks and the limit grooves are both included in plurality, and the limit blocks are arranged around the axis of the annular protrusion and are spaced apart on the inner wall of the annular protrusion; the limit grooves are arranged around the axis of the inner tube and are spaced apart on the outer wall of the inner tube near the cold water pan.

8. The temperature field stabilization device according to claim 2, characterized in that: An annular protrusion surrounding the upper through hole is formed on the side of the cover plate where the annular receiving groove is not provided, and an annular slot is provided on the outer wall of the inner cylinder near the cold water pan. The annular protrusion is used to be inserted into the annular slot when the cover plate is placed on the outer cylinder and the inner cylinder.

9. A vertical liquid phase epitaxy system, characterized in that: The invention comprises an epitaxial furnace, a graphite pull rod, a fixing frame for fixing a substrate, a cold water tray for accommodating cooling water, a graphite crucible for accommodating a mercury cadmium telluride solution, and a temperature field stabilization device according to any one of claims 1 to 8, wherein the graphite pull rod, the cold water tray, and the graphite crucible are all arranged in the epitaxial furnace, the cold water tray is located above the graphite crucible, the graphite pull rod is slidably arranged between the cold water tray and the graphite crucible, the fixing frame is arranged on one end of the graphite pull rod close to the graphite crucible, and the temperature field stabilization device is sleeved on the graphite pull rod, wherein: The graphite pull rod is used to extend the fixing frame into the graphite crucible under the action of an external force and immerse the substrate in the mercury cadmium telluride solution to grow a mercury cadmium telluride thin film on the substrate; The temperature field stabilization device is used to receive liquid mercury beads dripping from above during the growth process of the mercury cadmium telluride film.

10. The vertical liquid phase epitaxy system according to claim 9, characterized in that: The graphite crucible further comprises a pot cover, wherein the graphite crucible has a pot opening communicated with the interior, the pot cover is used to cover the graphite crucible to close the pot opening, and the pot cover is provided with an inlet and outlet for the graphite pull rod and the fixing frame to pass through.

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