IGBT (Insulated Gate Bipolar Translator) module capable of bearing ultra-large current

Abstract

The utility model provides an IGBT (Insulated Gate Bipolar Translator) module capable of bearing ultra-large current. Comprising a ceramic copper-clad plate which is provided with a plurality of mutually independent copper plates; each bridge arm comprises an upper bridge arm and a lower bridge arm, and each upper bridge arm and each lower bridge arm are respectively composed of three IGBT (Insulated Gate Bipolar Translator) chips and three FRD (Fast Recovery Diode) chips; a plurality of power terminals are arranged on two opposite sides of the shell; a plurality of mounting holes and shell mounting holes are formed in the edge of the metal bottom plate in a staggered manner; each bridge arm is independently arranged on one ceramic copper-clad plate, the upper bridge arm and the lower bridge arm are arranged at the two ends of the ceramic copper-clad plates respectively, the three ceramic copper-clad plates are vertically fixed in the middle of the metal bottom plate side by side, and the shell is fixed to the edge of the metal bottom plate to surround the three ceramic copper-clad plates. The three bridge arms of the module are respectively formed by connecting three groups of IGBT chips and FRD chips in parallel, so that the module can bear larger current, and a piezoresistor is arranged in the module, so that the module has an overvoltage protection function.

Description

Technical Field

[0001] The utility model relates to an IGBT module capable of carrying ultra-large current. Background Art

[0002] The IGBT module is a composite fully-controlled voltage-driven power semiconductor device with the advantages of large input impedance, low driving power, simple control circuit, low switching loss, fast on-off speed, high operating frequency, and large component capacity. This makes it applicable to more and more high-power circuits. However, the current level carried by the current IGBT module cannot be applied to circuits with higher power. For example, the IGBT module MJ packaging structure disclosed in publication number CN220627809U adopts a single IGBT chip and FRD chip in each bridge arm, so that it can only carry the rated current of a single IGBT chip and FRD chip, and cannot be adapted to the application of high-power electrical appliances. Utility Model Content

[0003] In order to solve the above technical problems, the utility model provides an IGBT module capable of carrying ultra-large currents.

[0004] The utility model is achieved through the following technical solutions.

[0005] The utility model provides an IGBT module capable of carrying ultra-large current; comprising:

[0006] Ceramic copper clad laminate, ceramic copper clad laminate has multiple independent copper plates;

[0007] Bridge arm, each bridge arm includes an upper bridge arm and a lower bridge arm, and each upper bridge arm and lower bridge arm are composed of three IGBT chips and three FRD chips respectively;

[0008] a housing, with a plurality of power terminals provided on opposite sides of the housing;

[0009] The metal base plate has a plurality of mounting holes and housing mounting holes which are staggered on the edge of the metal base plate;

[0010] Each bridge arm is separately arranged on a ceramic copper-clad plate, the upper bridge arm and the lower bridge arm are respectively arranged at the two ends of the ceramic copper-clad plate, the three ceramic copper-clad plates are vertically fixed side by side in the middle of the metal base plate, and the outer shell is fixed on the edge of the metal base plate to surround the three ceramic copper-clad plates.

[0011] The copper plate on the ceramic copper clad board includes an upper bridge arm device mounting plate and a lower bridge arm device mounting plate, the upper bridge arm device mounting plate and the lower bridge arm device mounting plate are respectively fixed at the two ends of the middle part of the ceramic copper clad board, and the two ends of the ceramic copper clad board are also respectively fixed with an upper bridge arm E-pole bus plate and a lower bridge arm E-pole bus plate, an upper bridge arm G-pole bus terminal is fixed on the ceramic copper clad board between the upper bridge arm E-pole bus plate and the upper bridge arm device mounting plate, a lower bridge arm G-pole bus plate is fixed on the ceramic copper clad board between the lower bridge arm E-pole bus plate and the lower bridge arm device mounting plate, and both ends of the upper bridge arm E-pole bus plate are fixed on the ceramic copper clad board. There are two lower bridge arm C-pole upper busbars fixed on the corners of the ceramic copper-clad board, and two lower bridge arm C-pole lower busbars are fixed on the corners of the ceramic copper-clad board on both sides of the lower bridge arm E-pole busbar. The two lower bridge arm C-pole lower busbars are respectively connected to the adjacent edges of the lower bridge arm device mounting plate. The lower bridge arm C-pole upper busbar is connected to the lower bridge arm device mounting plate through two adapter plates provided on the edge of the ceramic copper-clad board and on both sides of the upper bridge arm device mounting plate. The ceramic copper-clad board is also fixed with a thermistor mounting plate A and a thermistor mounting plate B at an edge adjacent to the lower bridge arm device mounting plate.

[0012] A signal terminal is provided on each of the upper bridge arm C-pole busbar, the upper bridge arm E-pole busbar, the adapter plate, the lower bridge arm G-pole busbar, the lower bridge arm E-pole busbar, the lower bridge arm C-pole lower busbar, thermistor mounting plate A, and thermistor mounting plate B, and adjacent signal terminals are arranged in the same straight line.

[0013] The IGBT chips and FRD chips are staggered in two rows and three columns, and the C poles of the IGBT chips and the cathodes of the FRD chips in each column of the upper bridge arm and the lower bridge arm are fixed on the upper bridge arm device mounting plate and the lower bridge arm device mounting plate respectively;

[0014] In the upper bridge arm, the E-pole of each column of IGBT chips and the anode of the FRD chip are connected through bonding wires and connected to the E-pole busbar of the upper bridge arm through bonding wires. The G-pole of the IGBT chip is connected to the G-pole bus terminal of the upper bridge arm through bonding wires.

[0015] In the lower bridge arm, the E pole of each column of IGBT chips and the anode of the FRD chip are connected through bonding wires and are respectively connected to the upper bridge arm device mounting plate and the lower bridge arm E pole busbar through bonding wires. The G pole of the IGBT chip is connected to the lower bridge arm G pole busbar through bonding wires.

[0016] The power terminals include a U-pole power terminal, a V-pole power terminal, a W-pole power terminal and a P3 lead-out terminal, an N3 lead-out terminal, a P2 lead-out terminal, an N2 lead-out terminal, a P1 lead-out terminal, and an N1 lead-out terminal, which are respectively arranged on both outer sides of the ceramic copper-clad laminate. The U-pole power terminal, the V-pole power terminal, and the W-pole power terminal are respectively connected to the lower bridge arm E-pole busbar on the three ceramic copper-clad laminates through welding pins in the shell, the P3 lead-out terminal, the P2 lead-out terminal, and the P1 lead-out terminal are respectively connected to the lower bridge arm C-pole upper busbar on the three ceramic copper-clad laminates through welding pins, and the N3 lead-out terminal, the N2 lead-out terminal, and the N1 lead-out terminal are respectively connected to the upper bridge arm E-pole busbar on the three ceramic copper-clad laminates through welding pins.

[0017] The shell is processed with a through hole corresponding to the shell mounting hole, and is fixed to the metal bottom plate by bolts installed in the shell mounting hole and the through hole on the ceramic copper clad plate.

[0018] A partition is also provided in the shell for separating adjacent ceramic copper-clad plates.

[0019] Thermistors are also included, and two ends of the three thermistors are respectively fixed on thermistor mounting board A and thermistor mounting board B on each ceramic copper-clad board.

[0020] The utility model also includes a cover plate fixed on the shell, and the cover plate is processed with through holes corresponding to the signal terminals.

[0021] The beneficial effect of the present invention is that the three bridge arms of the module are formed by three groups of IGBT chips and FRD chips connected in parallel, so that the module can carry a larger current, and a varistor is set in the module to give the module an overvoltage protection function. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 It is a structural diagram of the utility model;

[0023] Figure 2 This is a schematic diagram of the chip connection structure of the present utility model;

[0024] Figure 3 This is a schematic diagram of the structure of the ceramic copper clad plate of the present utility model;

[0025] Figure 4 This is a schematic diagram of the circuit principle of the utility model;

[0026] Figure 5 This is a schematic diagram of the wiring terminal structure of the present utility model;

[0027] In the figure: 1-metal base plate, 2-ceramic copper clad board, 3-housing, 4-U pole power terminal, 5-V pole power terminal, 6-W pole power terminal, 7-copper sheet, 8-solder foot, 9-P3 lead terminal, 10-N3 lead terminal, 11-P2 lead terminal, 12-N2 lead terminal, 13-P1 lead terminal, 14-N1 lead terminal, 16-partition, 17-signal terminal, 18-mounting hole, 19-housing mounting hole, 20-bonding wire, 21 -IGBT chip, 22-FRD chip, 23-upper bridge arm E-pole busbar, 24-lower bridge arm C-pole upper busbar, 25-upper bridge arm G-pole busbar terminal, 26-adapter board, 27-upper bridge arm device mounting board, 28-lower bridge arm device mounting board, 29-thermistor mounting board A, 30-thermistor mounting board B, 31-lower bridge arm C-pole lower busbar, 32-lower bridge arm E-pole busbar, 33-lower bridge arm G-pole busbar, 34-upper bridge arm C-pole busbar. DETAILED DESCRIPTION

[0028] The technical solution of the present invention is further described below, but the scope of protection claimed is not limited to the described solution.

[0029] An IGBT module capable of carrying ultra-large currents; by connecting three IGBT circuits in parallel within the module, a module is integrated that ultimately integrates 18 trench gate + field stop insulated gate bipolar transistors (IGBTs) and 18 anti-parallel fast recovery diodes (FRDs). This module's current carrying capacity exceeds all existing modules, reaching a maximum of 1640A. Figure 1 As shown, the ceramic copper clad plate 2 is provided with a plurality of independent copper plates;

[0030] Bridge arms, each bridge arm includes an upper bridge arm and a lower bridge arm, and each upper bridge arm and lower bridge arm are respectively composed of three IGBT chips 21 and three FRD chips 22;

[0031] A housing 3, with a plurality of power terminals provided on opposite sides of the housing 3;

[0032] The metal base plate 1 has a plurality of mounting holes 18 and housing mounting holes 19 interlaced on its edge. The metal base plate 1 is used as a support plate, and the good thermal conductivity of the metal base plate can quickly dissipate heat.

[0033] Each bridge arm is separately arranged on a ceramic copper clad plate 2, the upper bridge arm and the lower bridge arm are respectively arranged at the two ends of the ceramic copper clad plate 2, the three ceramic copper clad plates 2 are vertically fixed side by side in the middle of the metal base plate 1, and the shell 3 is fixed on the edge of the metal base plate 1 to surround the three ceramic copper clad plates 2.

[0034] The copper plate on the ceramic copper clad plate 2 includes an upper bridge arm device mounting plate 27 and a lower bridge arm device mounting plate 28. The upper bridge arm device mounting plate 27 and the lower bridge arm device mounting plate 28 are respectively fixed at the two ends of the middle part of the ceramic copper clad plate 2. The two ends of the ceramic copper clad plate 2 are also respectively fixed with an upper bridge arm E-pole busbar 23 and a lower bridge arm E-pole busbar 32. An upper bridge arm G-pole busbar terminal 25 is fixed on the ceramic copper clad plate 2 between the upper bridge arm E-pole busbar 23 and the upper bridge arm device mounting plate 27. A lower bridge arm G-pole busbar 33 is fixed on the ceramic copper clad plate 2 between the lower bridge arm E-pole busbar 32 and the lower bridge arm device mounting plate 28. The upper bridge arm E-pole busbar 23 is fixed on the ceramic copper clad plate 2 There are two lower bridge arm C-pole upper busbars 24 fixed on the corners of the ceramic copper-clad board 2 on both sides, and two lower bridge arm C-pole lower busbars 31 fixed on the corners of the ceramic copper-clad board 2 on both sides of the lower bridge arm E-pole busbar 32. The two lower bridge arm C-pole lower busbars 31 are respectively connected to the adjacent edges of the lower bridge arm device mounting plate 28. The lower bridge arm C-pole upper busbar 24 is connected to the lower bridge arm device mounting plate 28 through two adapter plates 26 provided on the edge of the ceramic copper-clad board 2 and on both sides of the upper bridge arm device mounting plate 27. The ceramic copper-clad board 2 is also fixed with a thermistor mounting plate A29 and a thermistor mounting plate B30 at an edge adjacent to the lower bridge arm device mounting plate 28.

[0035] A signal terminal 17 is provided on each of the upper bridge arm C-pole busbar 34, the upper bridge arm E-pole busbar 23, the adapter plate 26, the lower bridge arm G-pole busbar 33, the lower bridge arm E-pole busbar 32, the lower bridge arm C-pole lower busbar 31, the thermistor mounting plate A29, and the thermistor mounting plate B30, and adjacent signal terminals 17 are arranged on the same straight line.

[0036] The IGBT chips 21 and FRD chips 22 are staggered in two rows and three columns, and the C poles of the IGBT chips 21 and the cathodes of the FRD chips 22 in each column of the upper bridge arm and the lower bridge arm are fixed on the upper bridge arm device mounting plate 27 and the lower bridge arm device mounting plate 28 respectively;

[0037] In the upper bridge arm, the E-pole of each column of IGBT chips 21 and the anode of the FRD chip 22 are connected through the bonding wire 20 and connected to the upper bridge arm E-pole busbar 23 through the bonding wire 20. The G-pole of the IGBT chip 21 is connected to the upper bridge arm G-pole bus terminal 25 through the bonding wire 20.

[0038] In the lower bridge arm, the E pole of each column of IGBT chip 21 and the anode of the FRD chip 22 are connected through the bonding wire 20 and are respectively connected to the upper bridge arm device mounting plate 27 and the lower bridge arm E pole busbar 32 through the bonding wire 20. The G pole of the IGBT chip 21 is connected to the lower bridge arm G pole busbar 33 through the bonding wire 20.

[0039] The power terminals include a U-pole power terminal 4, a V-pole power terminal 5, a W-pole power terminal 6 and a P3 lead terminal 9, an N3 lead terminal 10, a P2 lead terminal 11, an N2 lead terminal 12, a P1 lead terminal 13, and an N1 lead terminal 14, which are respectively arranged on both outer sides of the ceramic copper clad laminate 2. The U-pole power terminal 4, the V-pole power terminal 5, and the W-pole power terminal 6 are respectively connected to the lower bridge arm E-pole busbar 32 on the three ceramic copper clad laminates 2 through the welding pins 8 in the shell 3. The P3 lead terminal 9, the P2 lead terminal 11, and the P1 lead terminal 13 are respectively connected to the lower bridge arm C-pole upper busbar 24 on the three ceramic copper clad laminates 2 through the welding pins 8. The N3 lead terminal 10, the N2 lead terminal 12, and the N1 lead terminal 14 are respectively connected to the upper bridge arm E-pole busbar 23 on the three ceramic copper clad laminates 2 through the welding pins 8.

[0040] The housing 3 is processed with a through hole corresponding to the housing mounting hole 19 and is fixed to the metal base plate 1 by bolts installed in the housing mounting hole 19 and the through holes on the ceramic copper clad board 2 .

[0041] A partition 16 is further provided in the housing 3 to separate adjacent ceramic copper-clad plates 2 .

[0042] Thermistors are also included, and two ends of the three thermistors are respectively fixed on the thermistor mounting board A29 and the thermistor mounting board B30 on each ceramic copper-clad board 2.

[0043] The housing 3 further includes a cover plate fixed to the housing 3 , and the cover plate is provided with through holes corresponding to the signal terminals 17 .

[0044] like Figure 4 and Figure 5 As shown, C1 and C2 are the C-pole signal terminals of the lower bridge arm and the upper bridge arm in the first group of bridge arms, G1 and G2 are the G-pole signal terminals of the upper bridge arm and the lower bridge arm, E1 and E2 are the signal terminals of the lower bridge arm and the upper bridge arm, respectively. The upper and lower bridge arms are formed by three IGBT chips and FRD chips in parallel, which greatly increases the module's withstand capacity.

Claims

1. An IGBT module capable of carrying ultra-high current, characterized by: include, A ceramic copper-clad plate (2), wherein the ceramic copper-clad plate (2) is provided with a plurality of mutually independent copper plates; Bridge arms, each bridge arm includes an upper bridge arm and a lower bridge arm, and each upper bridge arm and lower bridge arm are respectively composed of three IGBT chips (21) and three FRD chips (22); A housing (3), wherein a plurality of power terminals are provided on opposite sides of the housing (3); A metal base plate (1), wherein the edge of the metal base plate (1) is staggeredly processed with a plurality of mounting holes (18) and housing mounting holes (19); Each bridge arm is separately arranged on a ceramic copper-clad plate (2), the upper bridge arm and the lower bridge arm are respectively arranged at the two ends of the ceramic copper-clad plate (2), the three ceramic copper-clad plates (2) are vertically fixed side by side in the middle of the metal base plate (1), and the outer shell (3) is fixed on the edge of the metal base plate (1) to surround the three ceramic copper-clad plates (2).

2. The IGBT module capable of carrying ultra-high current according to claim 1, characterized in that: The copper plate on the ceramic copper-clad plate (2) includes an upper bridge arm device mounting plate (27) and a lower bridge arm device mounting plate (28), the upper bridge arm device mounting plate (27) and the lower bridge arm device mounting plate (28) are respectively fixed to the two ends of the middle part of the ceramic copper-clad plate (2), and the two ends of the ceramic copper-clad plate (2) are also respectively fixed with an upper bridge arm E-pole busbar (23) and a lower bridge arm E-pole busbar (32), an upper bridge arm G-pole busbar terminal (25) is fixed on the ceramic copper-clad plate (2) between the upper bridge arm E-pole busbar (23) and the upper bridge arm device mounting plate (27), a lower bridge arm G-pole busbar (33) is fixed on the ceramic copper-clad plate (2) between the lower bridge arm E-pole busbar (32) and the lower bridge arm device mounting plate (28), and the upper bridge arm E-pole busbar (23) is fixed to the ceramic copper-clad plate (2). ) are provided on both sides of the lower bridge arm C-pole upper busbars (24) fixed on the corners of the ceramic copper-clad plate (2); on both sides of the lower bridge arm E-pole busbar (32), there are two lower bridge arm C-pole lower busbars (31) fixed on the corners of the ceramic copper-clad plate (2); the two lower bridge arm C-pole lower busbars (31) are respectively connected to the adjacent edges of the lower bridge arm device mounting plate (28); the lower bridge arm C-pole upper busbar (24) is connected to the lower bridge arm device mounting plate (28) through two adapter plates (26) provided on the edge of the ceramic copper-clad plate (2) and on both sides of the upper bridge arm device mounting plate (27); the ceramic copper-clad plate (2) is further fixed with a thermistor mounting plate A (29) and a thermistor mounting plate B (30) at an edge adjacent to the lower bridge arm device mounting plate (28).

3. The IGBT module capable of carrying ultra-high current according to claim 2, wherein: A signal terminal (17) is provided on each of the upper bridge arm C-pole busbar (34), the upper bridge arm E-pole busbar (23), the adapter plate (26), the lower bridge arm G-pole busbar (33), the lower bridge arm E-pole busbar (32), the lower bridge arm C-pole lower busbar (31), the thermistor mounting plate A (29), and the thermistor mounting plate B (30), and adjacent signal terminals (17) are arranged on the same straight line.

4. The IGBT module capable of carrying ultra-high current according to claim 1, wherein: The IGBT chips (21) and the FRD chips (22) are staggered and arranged in two rows and three columns, and the C poles of the IGBT chips (21) and the cathodes of the FRD chips (22) in each column of the upper bridge arm and the lower bridge arm are respectively fixed on the upper bridge arm device mounting plate (27) and the lower bridge arm device mounting plate (28); In the upper bridge arm, the E pole of each column of IGBT chips (21) and the anode of the FRD chip (22) are connected via bonding wires (20) and connected to the upper bridge arm E pole busbar (23) via bonding wires (20), and the G pole of the IGBT chip (21) is connected to the upper bridge arm G pole bus terminal (25) via bonding wires (20); In the lower bridge arm, the E pole of each column of IGBT chips (21) and the anode of the FRD chip (22) are connected through bonding wires (20) and are respectively connected to the upper bridge arm device mounting plate (27) and the lower bridge arm E pole busbar (32) through bonding wires (20); the G pole of the IGBT chip (21) is connected to the lower bridge arm G pole busbar (33) through bonding wires (20).

5. The IGBT module capable of carrying ultra-large current according to claim 1, characterized in that: The power terminals include a U-pole power terminal (4), a V-pole power terminal (5), a W-pole power terminal (6), and a P3 lead terminal (9), an N3 lead terminal (10), a P2 lead terminal (11), an N2 lead terminal (12), a P1 lead terminal (13), and an N1 lead terminal (14), which are respectively arranged on both sides of the ceramic copper-clad plate (2). The U-pole power terminal (4), the V-pole power terminal (5), and the W-pole power terminal (6) are respectively connected to the outer shell (3) through welding feet (8). The lower bridge arm E-pole busbars (32) on the three ceramic copper-clad plates (2) are connected, the P3 lead-out terminal (9), the P2 lead-out terminal (11), and the P1 lead-out terminal (13) are respectively connected to the lower bridge arm C-pole upper busbars (24) on the three ceramic copper-clad plates (2) through welding pins (8), and the N3 lead-out terminal (10), the N2 lead-out terminal (12), and the N1 lead-out terminal (14) are respectively connected to the upper bridge arm E-pole busbars (23) on the three ceramic copper-clad plates (2) through welding pins (8).

6. The IGBT module capable of carrying ultra-large current according to claim 1, wherein: The housing (3) is processed with a through hole corresponding to the housing mounting hole (19), and is fixed to the metal base plate (1) by bolts installed in the housing mounting hole (19) and the through hole on the ceramic copper clad plate (2).

7. The IGBT module capable of carrying ultra-high current according to claim 6, characterized in that: A partition (16) is also provided in the housing (3) for separating adjacent ceramic copper-clad plates (2).

8. The IGBT module capable of carrying ultra-high current according to claim 1, characterized in that: The device also includes thermistors, with two ends of the three thermistors respectively fixed on a thermistor mounting plate A (29) and a thermistor mounting plate B (30) on each ceramic copper-clad plate (2).

9. The IGBT module capable of carrying ultra-high current according to claim 1, characterized in that: It also includes a cover plate fixed on the housing (3), and a through hole corresponding to the signal terminal (17) is processed on the cover plate.

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