Monoclinic phase PdSe2 chemical vapor deposition reaction device with stable airflow
By adopting a dual-temperature zone tubular furnace and quartz tube design in the chemical vapor deposition reaction device to control the evaporation rate of selenium powder and divert the selenium powder, the problems of fast evaporation rate of selenium powder and uneven heat conduction in the existing technology are solved, and efficient deposition of high-quality monoclinic PdSe2 thin films is achieved.
Patent Information
- Application Number
- CN202422634883.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-30
- Publication Date
- 2025-09-05
- Estimated Expiration
- 2034-10-30
AI Technical Summary
When preparing PdSe2 thin films in existing reaction devices, the selenium powder evaporates quickly, the amount used is large, and the heat conduction and gas diffusion are uneven, resulting in large raw material loss and difficult to control the chemical reaction environment.
It adopts a dual-temperature zone tubular furnace and quartz tube design, with a corundum boat and corundum tube inside. There are holes at the opening of the corundum boat, and a small-sized corundum tube is nested in the quartz tube to control the evaporation rate of selenium powder and divert the selenium powder, accurately controlling the chemical reaction environment.
The utilization rate of selenium powder is improved, heat loss is reduced, heat conduction and gas diffusion heterogeneity are reduced, and the deposition of high-quality monoclinic PdSe2 thin films is achieved.
Smart Images
Figure CN223304523U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of chemical vapor deposition devices, in particular to a monoclinic PdSe2 chemical vapor deposition reaction device with a stable airflow. Background Art
[0002] In recent years, palladium diselenide (PdSe2) has attracted widespread attention in research. It has a PdS2-type structure with Pbca space group symmetry, namely orthorhombic phase PdSe2. This structure has a unique pleated pentagonal arrangement, in which each central Pd atom forms a covalent bond with four Se atoms in the same layer, and adjacent Se atoms form covalent Se-Se bonds. The unique pentagonal structure gives PdSe2 many excellent properties.
[0003] Chemical vapor deposition (CVD) is considered one of the most promising methods for preparing high-quality and cost-effective PdSe2 films. Currently, orthorhombic PdSe2 films grown by CVD exhibit large size, adjustable number of layers, fast growth rate and excellent electrical properties. However, when preparing this type of PdSe2, the existing reaction device uses a traditional corundum boat to hold selenium powder. The selenium powder evaporates quickly and is used in large quantities, resulting in a large loss of raw materials. In addition, the internal heat conduction and gas diffusion uniformity of the existing reaction device are poor, making it difficult to adjust the chemical reaction environment parameters. Therefore, a monoclinic PdSe2 chemical vapor deposition reaction device with a stable airflow is needed to solve the above problems. Utility Model Content
[0004] The purpose of the present invention is to provide a monoclinic PdSe2 chemical vapor deposition reaction device with a stable gas flow, so as to solve the problems existing in the prior art proposed in the above background technology.
[0005] To achieve the above objectives, the present invention provides the following technical solutions:
[0006] A monoclinic PdSe2 chemical vapor deposition reaction device with stable airflow includes a dual-temperature zone tubular furnace, a quartz tube, and a flange. The quartz tube is arranged in the dual-temperature zone tubular furnace, and flanges are installed at both ends of the quartz tube. The flanges are connected to a delivery gas path.
[0007] A corundum boat is provided on one side of the interior of the quartz tube, a cover with holes on the surface is provided at the opening of the corundum boat, a corundum tube is provided on the other side of the interior of the quartz tube, and a quartz boat is provided in the corundum tube.
[0008] Preferably, the outer diameter of the quartz tube is 60-150 mm, the wall thickness is 1-5 mm, and the length is 600-1000 mm.
[0009] Preferably, the outer diameter of the corundum tube is 30 mm, the wall thickness is 2 mm, and the length is 450 mm.
[0010] Preferably, the length of the corundum boat is 40 mm, the width is 20 mm, and the height is 17 mm, and the diameter of the hole on the cover is 2 mm.
[0011] Preferably, a valve is installed on the gas delivery path.
[0012] Compared with the prior art, the beneficial effects of the present invention are:
[0013] 1. The utility model provides a cover with holes on the surface at the opening of the corundum boat. Compared with the traditional porcelain boat, the corundum boat can make the selenium powder evaporate evenly from the holes when heated. This design effectively controls the evaporation rate of the selenium powder, improves its utilization rate, reduces heat loss, and thus improves the deposition efficiency.
[0014] 2. By nesting a small-sized corundum tube inside the quartz tube, the utility model can effectively reduce the unevenness of heat conduction and gas diffusion, accurately control the size of the deposition area, and make the chemical reaction environment (such as temperature, pressure and gas composition) easier to control. The built-in corundum tube effectively diverts the evaporated selenium powder, which helps to maintain a specific low-selenium atmosphere under low vacuum conditions, which is conducive to obtaining high-quality monoclinic PdSe2 thin films. BRIEF DESCRIPTION OF THE DRAWINGS
[0015] Figure 1 It is a schematic diagram of the overall structure of the utility model.
[0016] In the figure: 1. Dual-temperature-zone tubular furnace; 2. Quartz tube; 3. Gas delivery line; 4. Flange; 5. Corundum tube; 6. Corundum boat; 7. Quartz boat; 8. Valve. DETAILED DESCRIPTION
[0017] In order to make the technical means, creative features, objectives and effects achieved by the present invention easier to understand, the present invention is further described below in conjunction with specific implementation methods.
[0018] See also Figure 1 , the utility model provides the following technical solutions:
[0019] A monoclinic PdSe2 chemical vapor deposition reaction device with a stable airflow includes a dual-temperature zone tubular furnace 1, a quartz tube 2 and a flange mouth 4. The quartz tube 2 is arranged in the dual-temperature zone tubular furnace 1. The quartz tube 2 has an outer diameter of 60-150 mm, a wall thickness of 1-5 mm, and a length of 600-1000 mm.
[0020] Flanges 4 are installed at both ends of the quartz tube 2 , and a gas delivery path 3 is connected to the flanges 4 . A valve 8 is installed on the gas delivery path 3 , and the gas inlet and outlet in the quartz tube 2 can be controlled by the valve 8 .
[0021] A corundum boat 6 is provided on one side of the interior of the quartz tube 2. The length of the corundum boat 6 is 40 mm, the width is 20 mm, and the height is 17 mm. The diameter of the hole on the cover is 2 mm. A cover with holes on the surface is provided at the opening of the corundum boat 6. Compared with the traditional porcelain boat, the corundum boat 6 can make the selenium powder evaporate evenly from the holes when heated. This design effectively controls the evaporation rate of the selenium powder, improves its utilization rate, reduces heat loss, and thus improves the deposition efficiency.
[0022] A corundum tube 5 is provided on the other side of the quartz tube 2, and a quartz boat 7 is provided inside the corundum tube 5; the outer diameter of the corundum tube 5 is 30 mm, the wall thickness is 2 mm, and the length is 450 mm. By nesting a small-sized corundum tube 5 inside the quartz tube 2, the unevenness of heat conduction and gas diffusion can be effectively reduced, and the size of the deposition area can be accurately controlled, making the chemical reaction environment (such as temperature, pressure and gas composition) easier to control. The built-in corundum tube 5 effectively diverts the evaporated selenium powder, which helps to maintain a specific low-selenium atmosphere under low vacuum conditions, which is crucial for obtaining high-quality monoclinic PdSe2 thin films.
[0023] The working process of this utility model is as follows:
[0024] When a chemical vapor deposition reaction of monoclinic PdSe2 is required, selenium powder is first loaded into the corundum boat 6 and placed in the upstream temperature zone of the dual-temperature zone tubular furnace 1. The pre-deposited Pd metal layer is loaded into the quartz boat 7 and placed in the corundum tube 5 in the downstream temperature zone of the dual-temperature zone tubular furnace 1; the quartz tube 2 is evacuated, and then argon and hydrogen are introduced to fill it to the ambient pressure. The dual-temperature zone tubular furnace 1 heats the quartz tube 2 and the selenium powder is heated and evaporated evenly from the holes in the cover of the corundum boat 6 and transported to the Pd metal layer through the argon and hydrogen flow. The built-in corundum tube 5 effectively diverts the evaporated selenium powder and maintains a low-selenium atmosphere under a low vacuum state. After natural cooling, the monoclinic PdSe2 thin film can be obtained.
[0025] Although the embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and variations may be made to these embodiments without departing from the principles and spirit of the present invention, and the scope of the present invention is defined by the appended claims and their equivalents.
Claims
1. A monoclinic PdSe2 chemical vapor deposition reaction device with stable gas flow, characterized in that: The invention comprises a dual-temperature zone tubular furnace (1), a quartz tube (2) and a flange (4), wherein the quartz tube (2) is arranged in the dual-temperature zone tubular furnace (1), flanges (4) are installed at both ends of the quartz tube (2), and a delivery gas path (3) is connected to the flange (4); A corundum boat (6) is provided on one side of the interior of the quartz tube (2), and a cover with holes on the surface is provided at the opening of the corundum boat (6). A corundum tube (5) is provided on the other side of the interior of the quartz tube (2), and a quartz boat (7) is provided inside the corundum tube (5).
2. The monoclinic PdSe2 chemical vapor deposition reaction device with stable gas flow according to claim 1, characterized in that: The outer diameter of the quartz tube (2) is 60-150 mm, the wall thickness is 1-5 mm, and the length is 600-1000 mm.
3. The monoclinic PdSe2 chemical vapor deposition reaction device with stable gas flow according to claim 1, characterized in that: The outer diameter of the corundum tube (5) is 30 mm, the wall thickness is 2 mm, and the length is 450 mm.
4. The monoclinic PdSe2 chemical vapor deposition reaction device with stable gas flow according to claim 1, characterized in that: The length of the corundum boat (6) is 40 mm, the width is 20 mm, and the height is 17 mm. The diameter of the hole on the cover is 2 mm.
5. The monoclinic PdSe2 chemical vapor deposition reaction device with stable gas flow according to claim 1, characterized in that: A valve (8) is installed on the gas delivery path (3).