Lumped parameter ring packer laminated film electrode ferrite assembly
Through the circuit board manufacturing process of the laminated planar electrode structure, the problems of low production efficiency and poor consistency caused by mechanical bending are solved, and the efficient and low-cost manufacturing of lumped parameter ring spacers is realized, which is suitable for 4G and 5G communication base stations.
Patent Information
- Application Number
- CN202422746936.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-12
- Publication Date
- 2025-09-05
- Estimated Expiration
- 2034-11-12
AI Technical Summary
During the production of existing miniaturized lumped parameter ring spacers, the mechanical bending and manual shaping processes are cumbersome, resulting in low production efficiency and poor product consistency.
A laminated planar electrode structure is adopted and mature circuit board manufacturing processes such as etching and pressing are used to achieve one-piece molding of the electrode. Through the alternating distribution of dielectric films and electrodes and metallized via connections, a lumped parameter ring spacer laminated thin film electrode ferrite component is formed.
It improves production efficiency and product consistency, reduces costs, and has low loss and high isolation characteristics near the 2.1GHz frequency, making it suitable for 4G and 5G communication base stations.
Smart Images
Figure CN223309189U_ABST
Abstract
Description
Technical Field
[0001] The utility model belongs to the technical field of communication devices, in particular to a lumped parameter ring spacer laminated film electrode ferrite component. Background Art
[0002] With the widespread adoption of 4G and 5G communications, the market is in great demand for miniaturized centralized parameter ring spacers. The manufacturing process for these devices involves mechanical bending and wrapping the electrodes to form the center conductor, integrating the ferrite with the multilayer electrodes. This process is cumbersome, inefficient, and results in poor product consistency.
[0003] With the original intention of reducing costs and improving production efficiency, this patent proposes a variety of laminated planar electrode structures, which can utilize the mature process of circuit board manufacturing, etching, pressing, and one-piece molding. Compared with mechanical bending and manual shaping, production efficiency and product consistency can be greatly improved. Utility Model Content
[0004] In order to solve the above problems, the utility model provides a lumped parameter ring spacer laminated thin film electrode ferrite component, which realizes the signal loop and isolation effect in the circuit, and improves the stability and reliability of the circuit operation.
[0005] The present invention adopts the following technical solutions to solve the above problems:
[0006] A lumped parameter ring spacer laminated thin film electrode ferrite assembly includes a laminated thin film electrode and a ferrite electrode that are pressed together. The laminated thin film electrode is arranged on the upper layer of the ferrite electrode. The laminated thin film electrode and the ferrite electrode are interconnected by a connecting structure. The laminated thin film electrode includes multiple groups of alternately distributed dielectric films and electrodes. The electrodes are electrically insulated by the dielectric films. The middle positions of multiple groups of electrodes overlap, and the endpoints of the electrodes are located at the edge of the dielectric film. The ferrite electrode includes a single-sided metallized ferrite sheet. The non-metallized surface of the ferrite sheet is connected to the laminated thin film electrode. The connecting structure is located at the edge of the ferrite electrode and corresponds to the multiple electrode endpoints.
[0007] Furthermore, the dielectric film includes a first dielectric film, a second dielectric film and a third dielectric film, the multiple groups of electrodes include a first electrode, a second electrode and a third electrode, and the first electrode, the second electrode and the third electrode are distributed at an angle of degrees.
[0008] Furthermore, the length, width and shape characteristics of the first electrode, the second electrode and the third electrode may be different depending on the frequency characteristics of the device, and the two edges of the first electrode, the second electrode and the third electrode are flush with the edges of the first dielectric film, the second dielectric film and the third dielectric film respectively.
[0009] Furthermore, the size of the ferrite sheet is flush with the thin film electrode, the edge of the ferrite sheet is punched, and each punched location is made with a metallized via hole, which corresponds to the end point position of each group of electrodes one by one and is connected after welding.
[0010] Furthermore, an annular dielectric epitaxial ring is provided outside the ferrite sheet, and a single-sided metallized ferrite sheet is embedded in the annular dielectric cavity of the annular dielectric epitaxial ring.
[0011] Furthermore, the size of the annular dielectric epitaxial ring is flush with the thin film electrode, with multiple half holes on the edge and metallized vias inside. The positions of the metallized vias correspond to the end points of each group of electrodes and are connected after welding.
[0012] Furthermore, the thin film electrode and the ferrite electrode are welded together to form a thin film ferrite assembly. The thin film ferrite assembly is a core component of the lumped parameter ring spacer and is mounted on a PCB substrate and connected to a PCB circuit.
[0013] Furthermore, the length and width of the first electrode, the second electrode and the third electrode are slightly larger than those of the first dielectric film, the second dielectric film and the third dielectric film by about 0.5-1 mm, and the portions of the electrodes extending beyond the dielectric film are used for pressing and folding.
[0014] Furthermore, the thin film electrode and the non-metallized surface of the ferrite electrode are bonded together to form a thin film ferrite assembly, and the thin film ferrite assembly is a core component of the lumped parameter ring spacer and is mounted on the PCB substrate of the ring spacer cavity.
[0015] Furthermore, the thin film ferrite component and PCB substrate assembly is covered with a film and evacuated. Under the action of air pressure, the electrodes extending beyond the thin film ferrite component are subjected to pressure, deformed and bent, and closely adhered to the PCB substrate.
[0016] The beneficial effects of the present invention are:
[0017] 1. This patent proposes a variety of laminated planar electrode structures, which can utilize the mature process of circuit board manufacturing, etching, pressing, and one-piece molding. Compared with mechanical bending and manual shaping, production efficiency and product consistency can be greatly improved, thereby reducing costs and improving production efficiency.
[0018] 2. This patent proposes a variety of stacked planar electrode structures, which make greater use of planar etching, punching, and pressing processes. The electrodes produced have good batch consistency and the cost is reduced.
[0019] 3. The thin film laminated ferrite component is mounted on the PCB board and interconnected with the matching circuit on the PCB to form a complete device. This structure makes more use of planar etching, punching and pressing processes, and the electrodes produced have good batch consistency and cost reduction.
[0020] 4. This patent proposes a variety of stacked planar electrode structures, which can be interconnected with the PCB substrate using a metallized via structure or an electrode port deformation bending structure as needed. Different structures are suitable for different batch production modes. The structure is flexible and has a wide range of applications.
[0021] 5. The device has low loss and high isolation characteristics near the 2.1GHZ frequency and is used in 4G and 5G communication base stations. With the widespread popularization of 4G and 5G communications, its application will gradually expand. BRIEF DESCRIPTION OF THE DRAWINGS
[0022] To more clearly illustrate the specific embodiments of the present invention, the following briefly describes the drawings required for describing the specific embodiments. The drawings described below are exemplary diagrams of the elastic wave device involving the interdigital transducer described above. Obviously, the drawings described below are merely illustrative, and those skilled in the art can, without inventive effort, derive other exemplary embodiments from the provided drawings.
[0023] Figure 1 is a schematic diagram of the layered structure of the thin film ferrite component in Example 1;
[0024] Figure 2 is a schematic structural diagram of the laminated thin film electrode pressed together in Example 1;
[0025] Figure 3 is a schematic structural diagram of the ferrite electrode in Example 1;
[0026] Figure 4 1 is a schematic diagram of the overall shape of the thin film ferrite assembly after lamination in Example 1;
[0027] Figure 5 Schematic diagram of the structure of the bowl-shaped thin film electrode ferrite component mounted on the PCB in Example 1;
[0028] Figure 6 is a schematic diagram of the layered structure of the thin film ferrite component in Example 2;
[0029] Figure 7 is a schematic diagram of the overall shape of the thin film ferrite assembly after lamination in Example 2;
[0030] Figure 8 Schematic diagram of the structure of the bowl-shaped thin film electrode ferrite component mounted on the PCB in Example 2;
[0031] Figure 9 is a schematic diagram of the layered structure of the thin film ferrite component in Example 3;
[0032] Figure 10 This is a schematic structural diagram of the electrode appearance after lamination with the auxiliary vacuum film removed in Example 3;
[0033] Figure 11 This is a schematic diagram of the structure of the bowl-shaped thin film electrode ferrite component pressed in Example 3 mounted on a PCB board;
[0034] Figure 12 This is a schematic diagram of device simulation results.
[0035] In the figure, 1-first dielectric film; 2-first electrode; 3-second dielectric film; 4-second electrode; 5-third dielectric film; 6-third electrode; 7-ferrite sheet; 8-bottom metallization layer of ferrite sheet; 9-metallized via; 10-annular dielectric epitaxial ring; 11-thin film ferrite assembly; 12-PCB substrate. DETAILED DESCRIPTION
[0036] The exemplary embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. Although exemplary embodiments of the present invention are shown in the accompanying drawings, it should be understood that the present invention can be implemented in various forms and should not be limited by the embodiments described herein; on the contrary, these embodiments are provided to enable a more thorough understanding of the present invention and to fully convey the scope of the present invention to those skilled in the art. It should be noted that the embodiments and features in the embodiments of the present invention can be combined with each other unless there is a conflict. The present invention will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.
[0037] like Figure 5 、 Figure 8 、 Figure 11As shown, the utility model provides a lumped parameter ring spacer laminated thin film electrode ferrite assembly, including a laminated thin film electrode and a ferrite electrode that are pressed together. The thin film electrode is arranged on the upper layer of the ferrite electrode. The laminated thin film electrode and the ferrite electrode are interconnected by a connecting structure. The laminated thin film electrode includes multiple groups of alternately distributed dielectric films and electrodes. The dielectric film adopts resin or other low-loss organic films, and the electrodes are made of copper or silver. The electrodes are electrically insulated by the dielectric film. The middle positions of the multiple groups of electrodes overlap, and the endpoints of the electrodes are located at the edge of the dielectric film. The ferrite electrode includes a single-sided metallized ferrite sheet 7. The bottom of the ferrite sheet 7 is metallized to form a ferrite bottom metallization layer 8. The non-metallized surface of the ferrite sheet 7 is connected to the laminated thin film electrode. The connecting structure is located at the edge of the ferrite electrode and corresponds to the multiple electrode endpoints. The thin film electrode and the ferrite electrode are welded together to form a thin film ferrite assembly 11. The thin film ferrite assembly 11 is the core component of the lumped parameter ring spacer and is mounted on a PCB substrate and connected to the PCB circuit.
[0038] Example 1
[0039] like Figure 1-Figure 5 As shown, the dielectric film includes a first dielectric film 1, a second dielectric film 3, and a third dielectric film 5. The multiple electrode groups include a first electrode 2, a second electrode 4, and a third electrode 6. The first electrodes 2, the second electrodes 4, and the third electrodes 6 are arranged at an angle of 120 degrees. The length, width, and shape characteristics of the first electrodes 2, the second electrodes 4, and the third electrodes 6 may vary depending on the frequency characteristics of the device. The two edges of the first electrodes 2, the second electrodes 4, and the third electrodes 6 are flush with the edges of the first dielectric film 1, the second dielectric film 3, and the third dielectric film 5, respectively. The size of the ferrite sheet 7 is flush with the edges of the first dielectric film 1, the second dielectric film 3, and the third dielectric film 5, that is, flush with the laminated thin film electrodes. The edge of the ferrite sheet 7 is perforated, and each perforation is formed with a metallized via 9. The metallized via 9 corresponds to the end point position of each electrode group and is connected after welding.
[0040] like Figure 1 、 Figure 2 As shown, this embodiment utilizes a PCB lamination process to press the first electrode 2, the second electrode 4, and the third electrode 6 together through the first dielectric film 1, the second dielectric film 3, and the third dielectric film 5, respectively, and distribute them at an angle of 120 degrees. The electrodes are electrically insulated by the dielectric film. The length, width, and shape characteristics of the electrodes may vary depending on the frequency characteristics of the device. The three electrodes have a total of six endpoints at both ends.
[0041] like Figure 1 、 Figure 3As shown, the ferrite sheet 7 is punched, and electrodes are made on both sides and interconnected through metallized holes. In this embodiment, the ferrite sheet 7 is made of gyromagnetic ferrite, and its saturation magnetic moment is several hundred to one thousand eight hundred gauss, which is selected according to different frequency devices. The six pad holes of the electrode correspond to the six end points of the thin film electrode one by one, and are connected after welding; Figure 4 As shown, the thin film electrode and the electrode on the ferrite surface are welded together to form a combination, namely the thin film ferrite assembly 11.
[0042] like Figure 5 As shown, the thin film ferrite component 11 is the core component of the lumped parameter ring spacer and is mounted on the ring spacer cavity PCB substrate 12, connected to the PCB circuit, and the PCB circuit provides a matching network to form a complete device.
[0043] Example 2
[0044] like Figure 6-Figure 8 As shown, this embodiment provides a bowl-shaped (i.e., conductive sidewall) laminated thin film electrode ferrite component with a via hole, an annular dielectric epitaxial ring 10 is provided on the outside of the ferrite sheet 7, and the annular dielectric cavity of the annular dielectric epitaxial ring 10 is embedded in the single-sided metallized ferrite sheet 7. The size of the annular dielectric epitaxial ring 10 is flush with the thin film electrode, and there are six half holes on the edge. Metallized vias 9 are provided inside. The positions of the metallized vias 9 correspond one-to-one to the end points of each group of electrodes, and they are connected after welding. Other technical features are the same as those in Example 1.
[0045] In this embodiment, the structure of the thin film electrode is the same as that of Example 1. Example 2 adds a circle of dielectric epitaxy to the ferrite electrode layer, and makes six metallized vias 9 in this epitaxial ring to form upper and lower interconnections. The metallized vias 9 in Example 1 are made at the edge of the ferrite sheet, and the processing methods and costs of the two are different.
[0046] like Figure 6 As shown, using a PCB lamination process, the first electrode 2, the second electrode 4, and the third electrode 6 are pressed together through the first dielectric film 1, the second dielectric film 3, and the third dielectric film 5, respectively, and are distributed at a 120-degree angle. The electrodes are electrically insulated by the dielectric film. The length, width, and shape characteristics of the electrodes can vary depending on the frequency characteristics of the device. The three electrodes have a total of six endpoints at both ends. The size of the annular dielectric epitaxial ring 10 is flush with the upper thin-film electrode, and there are six half holes on the edge. The interior is metallized, and the positions of the metallized holes correspond one-to-one to the six endpoints of the upper thin-film electrode. After welding, they are connected, and six pads are exposed at the bottom of the annular dielectric.
[0047] like Figure 7 As shown, a single-sided metallized ferrite sheet 7 is embedded in the annular dielectric cavity, with the metallized surface facing outward. In this embodiment, the ferrite sheet 7 is a gyromagnetic ferrite with a saturation magnetic moment of several hundred to one thousand eight hundred gauss, which is selected according to different frequency devices.
[0048] like Figure 8 As shown, the thin film electrode, the conductive through-hole dielectric on the side wall of the annular belt, and the ferrite sheet 7 together constitute the core component of the lumped ring spacer, which is mounted on the PCB substrate 12 of the ring spacer cavity. The six solder joints at the bottom of the component are interconnected with the corresponding electrodes on the PCB and connected to the PCB circuit. The PCB circuit provides a matching network to form a complete device.
[0049] Example 3
[0050] like Figure 9-11 As shown, this embodiment provides a pressed bowl-shaped laminated thin-film electrode ferrite assembly. Compared with Examples 1 and 2, the length and width dimensions of the first electrode 2, the second electrode 4, and the third electrode 6 are slightly larger than those of the first dielectric film 1, the second dielectric film 3, and the third dielectric film 5 by approximately 0.5-1 mm. The portion of each electrode that extends beyond the dielectric film is used for pressing and folding. In other words, the connecting structure in this embodiment is the edge of the thin-film motor.
[0051] Compared with Example 1 and Example 2, both Examples 1 and 2 have metallized vias. This embodiment uses vacuum pressing to interconnect the six ports of the thin film electrode with the underlying PCB board through deformation and bending. Different structures are suitable for different batch production modes.
[0052] like Figure 9 、 Figure 11 As shown, using a PCB lamination process, the first electrode 2, second electrode 4, and third electrode 6 shown are pressed together via a first dielectric film 1, a second dielectric film 3, and a third dielectric film 5, respectively, and arranged at a 120-degree angle. The electrodes are electrically insulated by the dielectric film, and the length, width, and shape of the electrodes can vary depending on the device's frequency characteristics. The entire electrode has a laminated planar structure. The length and width of the thin film electrode are approximately 0.5-1 mm larger than the ferrite sheet size. The excess is used for lamination and folding. The bottom surface of the ferrite sheet 7 is metallized to form a bottom metallization layer 8. The thin film electrode and the non-metallized surface of the ferrite electrode are bonded together to form a composite assembly, with their centers aligned and their edges parallel. Because the thin film electrode is larger than the ferrite, the edge of the thin film electrode protrudes from the ferrite. This composite assembly, the core component of the lumped parameter ring spacer, is mounted on the PCB substrate 12 of the ring spacer cavity.
[0053] like Figure 10 As shown, the PCB assembly is covered with a film and vacuumed. Under the action of air pressure, the protruding ferrite electrode is subjected to pressure, deformed and bent, and tightly adheres to the PCB substrate 12. The six ports of the film electrode correspond one-to-one with the positions of the electrodes on the PCB (covered with the solder layer) and are pressed tightly under the action of air pressure.
[0054] like Figure 11As shown, the electrodes of the thin film ferrite component 11 are connected to the lower PCB through a welding process to form electrode interconnections, and the corresponding matching inductors and capacitors are connected at each electrode port to achieve device performance.
[0055] Simulation Example
[0056] The thin film laminated ferrite components 11 of Example 1, Example 2, and Example 3 are mounted on a PCB substrate 12 and interconnected with the matching circuit on the PCB to form a complete device, such as Figure 12 Figure 2 shows a simulation example of a 2.1GHz isolator.
[0057] The simulation example uses 2.5*2.0*0.25mm 3 The ferrite is embedded in a bowl-shaped laminated thin-film electrode with an epitaxial size of 3.2*2.7. The three output-stage ports are each connected in parallel with a 1.6pF capacitor to ground. Simulation performance shows that the transmission loss from device 1 to 2 is less than 0.6dB, and the isolation from 2 to 1 is greater than 20dB within the passband. The echo at the three ports is very small, and the device demonstrates excellent performance.
[0058] This device has low loss and high isolation characteristics near the 2.1GHZ frequency, and is compact, making it convenient for use in 4G and 5G communication base stations.
[0059] It should be noted that the content and exemplary embodiments herein are intended only to illustrate the technical solutions of this patent. However, the implementation of this patent is not limited by the foregoing content. Any changes, modifications, substitutions, and combinations that do not deviate from the innovative essence and principles of this patent are included within the scope of protection of this patent. Those skilled in the art will understand the specific meanings of the above terms in the patent based on the specific circumstances.
Claims
1. A lumped parameter ring spacer laminated thin film electrode ferrite assembly, characterized in that: The invention comprises a laminated thin film electrode and a ferrite electrode which are pressed together. The laminated thin film electrode is arranged on the upper layer of the ferrite electrode. The laminated thin film electrode and the ferrite electrode are interconnected via a connection structure. The laminated thin film electrode comprises a plurality of groups of alternately distributed dielectric films and electrodes. The electrodes are electrically insulated by the dielectric films. The middle positions of the plurality of groups of electrodes overlap. The endpoints of the electrodes are located at the edge of the dielectric film. The ferrite electrode comprises a ferrite sheet (7) which is metallized on one side. The non-metallized surface of the ferrite sheet (7) is connected to the laminated thin film electrode. The connection structure is located at the edge of the ferrite electrode and corresponds to the endpoints of the plurality of electrodes.
2. The lumped parameter ring spacer laminated thin film electrode ferrite assembly according to claim 1, characterized in that: The dielectric film comprises a first dielectric film (1), a second dielectric film (3) and a third dielectric film (5); the plurality of groups of electrodes comprise a first electrode (2), a second electrode (4) and a third electrode (6); the first electrode (2), the second electrode (4) and the third electrode (6) are distributed at an angle of 120 degrees.
3. The lumped parameter ring spacer laminated thin film electrode ferrite assembly according to claim 2, characterized in that: The length, width and shape characteristics of the first electrode (2), the second electrode (4) and the third electrode (6) may be different depending on the frequency characteristics of the device. The two edges of the first electrode (2), the second electrode (4) and the third electrode (6) are flush with the edges of the first dielectric film (1), the second dielectric film (3) and the third dielectric film (5), respectively.
4. The lumped parameter ring spacer laminated thin film electrode ferrite assembly according to claim 1, characterized in that: The size of the ferrite sheet (7) is flush with the laminated thin film electrode. The edge of the ferrite sheet (7) is punched, and a metallized via (9) is made at each punched position. The metallized via (9) corresponds to the end point position of each group of electrodes one by one and is connected after welding.
5. The lumped parameter ring spacer laminated thin film electrode ferrite assembly according to claim 1, characterized in that: An annular dielectric epitaxial ring (10) is provided outside the ferrite sheet (7), and a single-sided metallized ferrite sheet (7) is embedded in the annular dielectric cavity of the annular dielectric epitaxial ring (10).
6. The lumped parameter ring spacer laminated thin film electrode ferrite assembly according to claim 5, characterized in that: The size of the annular dielectric epitaxial ring (10) is flush with the thin film electrode, with multiple half holes on the edge and metallized vias (9) inside. The positions of the metallized vias (9) correspond one-to-one to the end positions of each group of electrodes and are connected after welding.
7. The lumped parameter ring spacer laminated thin film electrode ferrite assembly according to claim 1, characterized in that: The thin film electrode and the ferrite electrode are welded together to form a thin film ferrite component (11). The thin film ferrite component (11) is a core component of a lumped parameter ring spacer and is mounted on a PCB substrate and connected to a PCB circuit.
8. The lumped parameter ring spacer laminated thin film electrode ferrite assembly according to claim 2, characterized in that: The length and width of the first electrode (2), the second electrode (4) and the third electrode (6) are slightly larger by about 0.5-1 mm compared to the first dielectric film (1), the second dielectric film (3) and the third dielectric film (5), and the portion of the electrode that exceeds the dielectric film is used for pressing and folding.
9. The lumped parameter ring spacer laminated thin film electrode ferrite assembly according to claim 8, characterized in that: The thin film electrode and the non-metallized surface of the ferrite electrode are bonded together to form a thin film ferrite component (11). The thin film ferrite component (11) is a core component of the lumped parameter ring spacer and is mounted on a PCB substrate (12) of the ring spacer cavity.
10. The lumped parameter ring spacer laminated thin film electrode ferrite assembly according to claim 9, characterized in that: The thin film ferrite component (11) and the PCB substrate (12) assembly are covered with a film and evacuated. Under the action of air pressure, the electrodes extending beyond the thin film ferrite component (11) are subjected to pressure, deformed and bent, and closely adhered to the PCB substrate (12).