Gas transmission system and semiconductor processing equipment

Abstract

The utility model discloses a gas transmission system and semiconductor processing equipment, the gas transmission system comprises: a plurality of gas inlet pipelines, the gas inlet end of each gas inlet pipeline is communicated with a process gas source, and the gas outlet end of each gas inlet pipeline comprises a first branch and a plurality of second branches; the gas inlet end of the first flow divider is communicated with the first branch of each gas inlet pipeline, and the gas outlet end of the first flow divider is communicated with the reaction cavity through a gas conveying pipeline; the number of the gas conveying pipelines is the same as that of the gas outlet ends of the first flow divider; the number of the second branches of each gas inlet pipeline is the same as that of the gas conveying pipelines, and the second branches of each gas inlet pipeline are correspondingly communicated to the gas conveying pipelines; each first branch is provided with a first control valve, and each second branch is provided with a second control valve. According to the utility model, the process gas supplied by the process gas source can be introduced into the reaction cavity through the first flow divider and can also be introduced into the reaction cavity without passing through the first flow divider, so that the use of the process gas is more flexible.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor preparation, in particular to a gas transmission system and semiconductor processing equipment. Background Art

[0002] During the semiconductor preparation process, it is necessary to introduce process gas into the reaction chamber through a gas transmission system to perform process treatment on the substrate in the reaction chamber. The process gas usually includes a main gas from a main gas source and a regulating gas from a regulating gas source; in the gas transmission system, the main gas is controlled by a mass flow controller (MFC) and distributed to the main pipeline through a diverter to enter different areas of the reaction chamber; the regulating gas is controlled by a valve and directly flows into the main pipeline at the rear end of the diverter to adjust the gas flow in the main pipeline. However, in this regulation method, the main gas can only be connected to the front end of the diverter, and the regulating gas can only be connected to the rear end of the diverter, resulting in poor regulation flexibility, which in turn affects the preparation efficiency of the substrate. Therefore, it is necessary to adjust the structure of the gas transmission system. Utility Model Content

[0003] The purpose of the present utility model is to provide a gas transmission system and semiconductor processing equipment, in which the process gas supplied by the process gas source can be introduced into the reaction chamber through a first diverter or without passing through the first diverter, making the use of the process gas more flexible.

[0004] In order to achieve the above object, the present invention is implemented through the following technical solutions:

[0005] A gas transmission system comprising:

[0006] A plurality of air inlet pipelines, wherein the air inlet end of each air inlet pipeline is connected to a process gas source, and the air outlet end of each air inlet pipeline includes a first branch and a plurality of second branches;

[0007] a first flow splitter, whose air inlet end is connected to the first branch of each of the air inlet pipelines, and whose air outlet end is connected to the reaction chamber via a gas delivery pipeline; the number of the gas delivery pipelines and the air outlet ends of the first flow splitter is the same and both are at least two;

[0008] The number of the second branches of each of the air intake pipelines is the same as the number of the air delivery pipelines, and the second branches of each of the air intake pipelines are correspondingly connected to the air delivery pipelines; each of the first branches is provided with a first control valve, and each of the second branches is provided with a second control valve.

[0009] Optionally, a first mass flow controller is provided between the air inlet end and the air outlet end of each of the air inlet pipelines.

[0010] Optionally, a first gas valve is provided between the first mass flow controller and the process gas source of each of the gas inlet pipelines.

[0011] Optionally, a second air valve is provided between the air outlet end of each of the air inlet pipelines and the first mass flow controller.

[0012] Optionally, the gas transmission system further comprises: at least one regulating pipeline and a second flow divider;

[0013] The gas inlet end of each regulating pipeline is connected to the process gas source;

[0014] The gas outlet ends of all the regulating pipelines are connected to the gas inlet end of the first flow divider through the same third control valve and are connected to the gas inlet end of the second flow divider through the same fourth control valve;

[0015] The gas outlet end of the second flow splitter is connected to the gas transmission pipeline through a connecting pipe, and the gas outlet end of the second flow splitter, the connecting pipe and the gas transmission pipeline are the same in number.

[0016] Optionally, a second mass flow controller is provided between the air inlet and the air outlet of each regulating pipeline.

[0017] Optionally, a third gas valve is provided between the second mass flow controller and the process gas source in each regulating pipeline.

[0018] Optionally, a fourth gas valve is provided between the gas outlet end of each regulating pipeline and the second mass flow controller.

[0019] Optionally, the first flow splitter distributes the process gas introduced into the gas inlet end thereof to each of the gas pipelines in a first preset ratio;

[0020] The second flow divider distributes the process gas introduced into the gas inlet end thereof to each of the connecting pipes in a second preset ratio, and the second preset ratio is different from the first preset ratio.

[0021] Optionally, the process gas transmitted by the gas transmission system includes main gas and / or regulating gas.

[0022] In another aspect, the present invention further provides a semiconductor processing device, comprising:

[0023] reaction chamber;

[0024] A base is provided at the bottom of the reaction chamber and is used to support the substrate;

[0025] The gas delivery system as described above is connected to the process gas source and the reaction chamber, and is used to pass the process gas into the reaction chamber to process the substrate.

[0026] Compared with the prior art, the present invention has at least one of the following advantages:

[0027] The present invention provides a gas transmission system and semiconductor processing equipment, wherein the air inlet end of each air inlet pipeline is connected to a process gas source, and the air outlet end of each air inlet pipeline includes a first branch provided with a first control valve and a plurality of second branches provided with second control valves. The air inlet end of the first diverter is connected to the first branch of each air inlet pipeline, and the air outlet end of the first diverter is connected to the reaction chamber through the gas supply pipeline; and the second branch of each air inlet pipeline is correspondingly connected to the gas supply pipeline. In the utility model, the opening and closing of the first control valve and the second control valve on each air inlet pipeline can be controlled according to specific process requirements, so that the process gas supplied by the process gas source can be passed into the reaction chamber through the first diverter or not, thereby making the use of the process gas more flexible.

[0028] In the present invention, the process gas introduced into the reaction chamber through the first diverter can be recorded as the main gas, and the process gas introduced into the reaction chamber without passing through the first diverter can be recorded as the regulating gas; the main gas and the regulating gas can also be determined by controlling the opening and closing of the first control valve and the second control valve on each air inlet pipeline, and there is no need to separately set up the main gas source and the regulating gas source as in the prior art, thereby saving the number of gas sources and reducing the economic cost and occupied space of the gas transmission system.

[0029] The second flow divider in the present invention can further fine-tune the gas flow of the delivery pipeline, thereby playing an auxiliary adjustment role and further ensuring that the gas concentration in different areas of the reaction chamber is evenly distributed; and the second flow divider cooperates with the second branch in the air inlet pipeline to quickly adjust the gas flow of the delivery pipeline, so that the gas concentration in different areas of the reaction chamber is evenly distributed as quickly as possible, thereby improving process efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 This is a schematic structural diagram of a gas transmission system provided by one embodiment of the present utility model;

[0031] Figure 2 This is a structural diagram of a gas transmission system provided by an embodiment of the present utility model, in which a second flow splitter is provided;

[0032] Figure 3 This is a structural diagram of a semiconductor processing device provided by one embodiment of the present utility model. DETAILED DESCRIPTION

[0033] The following is a further detailed description of a gas transmission system and semiconductor processing equipment proposed by the present invention in conjunction with the accompanying drawings and specific embodiments. According to the following description, the advantages and features of the present invention will be clearer. It should be noted that the drawings are in a very simplified form and use non-precise proportions, which are only used to conveniently and clearly assist in explaining the purpose of the implementation of the present invention. In order to make the purpose, features and advantages of the present invention more obvious and easy to understand, please refer to the drawings. It should be noted that the structure, proportion, size, etc. illustrated in the drawings of this specification are only used to match the content disclosed in the specification for people familiar with this technology to understand and read, and are not used to limit the implementation conditions of the present invention, so they have no technical significance. Any modification of the structure, change in the proportional relationship or adjustment of the size should still fall within the scope of the technical content disclosed by the present invention without affecting the efficacy and purpose that can be achieved by the present invention.

[0034] It should be noted that, in this document, relational terms such as first and second, etc., are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply the existence of any such actual relationship or order between these entities or operations. Moreover, the terms "comprises," "comprising," or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article, or device comprising a series of elements includes not only those elements, but also other elements not explicitly listed, or elements inherent to such process, method, article, or device. In the absence of further limitations, an element defined by the phrase "comprising a ..." does not exclude the presence of other identical elements in the process, method, article, or device comprising the element.

[0035] Combined with attachment Figures 1-2 As shown, this embodiment provides a gas transmission system, comprising: a plurality of gas inlet pipelines 110 and a first flow splitter 120. The gas inlet end of each gas inlet pipeline 110 is connected to a process gas source 100, and the gas outlet end of each gas inlet pipeline 110 includes a first branch 1101 and a plurality of second branches 1102. The gas inlet end of the first flow splitter 120 is connected to the first branch 1101 of each gas inlet pipeline 110, and the gas outlet end of the first flow splitter 120 is connected to a reaction chamber via a gas delivery pipeline 130; the number of gas outlet ends of the gas delivery pipeline 130 and the number of gas outlet ends of the first flow splitter 120 are the same, and both are at least two.

[0036] Specifically, the number of the second branches 1102 of each of the air intake pipes 110 is the same as the number of the air delivery pipes 130, and each of the second branches 1102 of the air intake pipes 110 is connected to the corresponding air delivery pipes 130. Furthermore, each of the first branches 1101 is provided with a first control valve 1103, and each of the second branches 1102 is provided with a second control valve 1104.

[0037] In this embodiment, the process gas source 100 stores process gas; when the number of the gas delivery pipelines 130 is n, each of the gas inlet pipelines 110 can deliver the process gas input at its gas inlet end to the reaction chamber through n+1 paths; wherein n≥2, and n is a positive integer.

[0038] Specifically, the first path is: the air inlet pipeline 110 directly transports the process gas input at its air inlet end to the first air supply pipeline and passes into the reaction chamber through the first air supply pipeline; at this time, the first control valve 1103 on the air inlet pipeline 110 is closed, the second control valve 1104 on the air inlet pipeline 110 corresponding to the first air supply pipeline is opened, and the remaining second control valves 1104 are closed.

[0039] The second path is: the air inlet pipeline 110 directly transports the process gas input at its air inlet end to the second air supply pipeline and passes into the reaction chamber through the second air supply pipeline; at this time, the first control valve 1103 on the air inlet pipeline 110 is closed, the second control valve 1104 on the air inlet pipeline 110 corresponding to the second air supply pipeline is opened, and the remaining second control valves 1104 are closed.

[0040] By analogy, the nth path is: the air inlet pipeline 110 directly transports the process gas input at its air inlet end to the nth air supply pipeline and passes into the reaction chamber through the nth air supply pipeline; at this time, the first control valve 1103 on the air inlet pipeline 110 is closed, the second control valve 1104 on the air inlet pipeline 110 corresponding to the nth air supply pipeline is opened, and the remaining second control valves 1104 are closed.

[0041] Furthermore, the n+1th path is as follows: the process gas entering the inlet end of the inlet pipeline 110 is delivered to the first flow divider 120, where it is distributed to the first, second,…, nth gas delivery pipelines via the first flow divider 120, and then introduced into the reaction chamber via the first, second,…, nth gas delivery pipelines. At this point, the first control valve 1103 on the inlet pipeline 110 is open, and all second control valves 1104 on the inlet pipeline 110 are closed. Optionally, the first flow divider 120 distributes the process gas entering its inlet end to each of the gas delivery pipelines 130 in a first preset ratio, thereby introducing the process gas into the reaction chamber in the first preset ratio to meet process requirements.

[0042] In this embodiment, according to specific process requirements, the opening and closing of the first control valve 1103 and the second control valve 1104 on each of the air inlet pipes 110 can be controlled, so that the process gas can be passed into the reaction chamber through any of the above-mentioned n+1 paths, so that the process gas supplied by the process gas source 100 can be passed into the reaction chamber through the first diverter 120 or not through the first diverter 120, thereby making the use of process gas more flexible.

[0043] Please also refer to Figure 1 and Figure 2 The process gas transmitted by the gas transmission system includes main gas and / or regulating gas; wherein, the process gas introduced into the reaction chamber through the first diverter 120 can be recorded as the main gas, and the process gas introduced into the reaction chamber without passing through the first diverter 120 can be recorded as the regulating gas.

[0044] Specifically, in this embodiment, the main gas delivered through the first flow divider 120 is used to perform processes such as etching and deposition on the substrate within the reaction chamber; the conditioning gas delivered through the second branch 1102 can be used to fine-tune the gas flow rate of the corresponding delivery pipeline 130, so that the gas concentration distribution in different areas of the reaction chamber (e.g., the center and edge areas of the substrate) is uniform, thereby ensuring uniform process results. Furthermore, in this case, the conditioning gas has the same composition as the main gas.

[0045] In addition, in some embodiments, the conditioning gas delivered through the second branch 1102 can also be used to protect the inner wall of the reaction chamber from corrosion, thereby increasing the service life of the reaction chamber. The conditioning gas delivered through the second branch 1102 can also prevent deposits from accumulating on the inner wall of the reaction chamber, thereby preventing the deposits from falling off and contaminating the substrate. Furthermore, in this case, the composition of the conditioning gas and the main gas can be the same or different. If they are different, the conditioning gas can be an inert gas such as helium, but the present invention is not limited to this.

[0046] In this embodiment, the main gas and the regulating gas can also be determined by controlling the opening and closing of the first control valve 1103 and the second control valve 1104 on each of the air intake pipes 110. There is no need to set up a main gas source and a regulating gas source separately as in the prior art, thereby saving the number of gas sources and reducing the economic cost and occupied space of the gas transmission system.

[0047] Please also refer to Figure 1 and Figure 2 A first mass flow controller 111 is provided between the gas inlet end and the gas outlet end of each gas inlet pipeline 110 for controlling the mass flow of the process gas supplied by the process gas source 100 .

[0048] Optionally, a first gas valve 112 is provided between the first mass flow controller 111 of each of the inlet pipelines 110 and the process gas source 100, for controlling the inlet flow rate of the first mass flow controller 111. Optionally, a second gas valve 113 is provided between the outlet end of each of the inlet pipelines 110 and the first mass flow controller 111, for controlling the outlet flow rate of the first mass flow controller 111, but the present invention is not limited thereto.

[0049] Please continue to refer to Figure 2 The gas transmission system further includes: at least one regulating pipeline 140 and a second flow divider 150. The gas inlet of each regulating pipeline 140 is connected to the process gas source 100; the gas outlets of all regulating pipelines 140 are connected to the gas inlet of the first flow divider 120 through a common third control valve 160, and to the gas inlet of the second flow divider 150 through a common fourth control valve 170. The gas outlets of the second flow dividers 150 are connected to the corresponding gas delivery pipelines 130 via connecting pipes 180, and the number of the gas outlets of the second flow dividers 150, the connecting pipes 180, and the gas delivery pipelines 130 is the same.

[0050] Specifically, when the number of the gas delivery pipelines 130 is n, the number of the connecting pipes 180 is also n. The regulating pipeline 140 can deliver the process gas inputted at its inlet end to the reaction chamber via two pathways. The first pathway is as follows: the regulating pipeline 140 delivers the process gas inputted at its inlet end to the first flow divider 120, where the process gas is distributed by the first flow divider 120 to the first, second, ..., nth gas delivery pipelines, and then to the reaction chamber via the first, second, ..., nth gas delivery pipelines. At this time, the third control valve 160 is open, and the fourth control valve 170 is closed.

[0051] The second path is: the regulating pipeline 140 transports the process gas input from its air inlet end to the second splitter 150 and distributes it to the 1st, 2nd..., nth connecting pipes through the second splitter 150, and then transports it to the 1st, 2nd..., nth gas delivery pipelines through the 1st, 2nd..., nth connecting pipes respectively, and then enters the reaction chamber through the 1st, 2nd..., nth gas delivery pipelines; at this time, the third control valve 160 is closed and the fourth control valve 170 is opened.

[0052] In this embodiment, the process gas introduced into the reaction chamber via the second flow splitter 150 without passing through the first flow splitter 120 is also referred to as the regulating gas. The second flow splitter 150 can further fine-tune the gas flow rate in the delivery pipeline 130, thereby serving as an auxiliary regulation function and further ensuring uniform distribution of gas concentration in different areas of the reaction chamber. Furthermore, the second flow splitter 150, in conjunction with the second branch 1102 of the air inlet pipeline 110, can rapidly regulate the gas flow rate in the delivery pipeline 130, ensuring uniform distribution of gas concentration across different areas of the reaction chamber as quickly as possible, thereby improving process efficiency.

[0053] Optionally, the second flow splitter 150 distributes the process gas introduced into the gas inlet to each of the connecting tubes 180 at a second predetermined ratio, thereby delivering the process gas to the corresponding gas delivery pipeline 130 through the connecting tubes 180 and then entering the reaction chamber at the second predetermined ratio. Optionally, the second predetermined ratio is different from the first predetermined ratio, so that the second flow splitter 150 can further fine-tune the gas flow rate of the gas delivery pipeline 130.

[0054] Please continue to refer to Figure 2 A second mass flow controller 141 is provided between the gas inlet and outlet ends of each regulating pipeline 140 for controlling the mass flow of the process gas supplied by the process gas source 100 .

[0055] Optionally, a third gas valve 142 is provided between the second mass flow controller 141 of each regulating pipeline 140 and the process gas source 100 to control the inlet flow rate of the second mass flow controller 141. Optionally, a fourth gas valve 143 is provided between the outlet end of each regulating pipeline 140 and the second mass flow controller 141 to control the outlet flow rate of the second mass flow controller 141, but the present invention is not limited thereto.

[0056] Combined with attachment Figure 3 As shown, this embodiment also provides a semiconductor processing device, including: a reaction chamber 200; a base 210, which is arranged at the inner bottom of the reaction chamber 200 and is used to support a substrate (not shown in the figure); the gas transmission system as described above is connected to the process gas source 100 and the reaction chamber 200, and is used to pass the process gas into the reaction chamber 200 to process the substrate.

[0057] Specifically, the reaction chamber 200 may be provided with a plurality of gas inlets 201, some of which may be disposed on the top wall of the reaction chamber 200, and others on the side walls of the reaction chamber 200. The gas pipeline 130 in the gas transmission system is in communication with the gas inlets 201 to introduce process gas into the reaction chamber 200. Optionally, the number of the gas inlets 201 is the same as the number of the gas pipelines 130, and the gas pipelines 130 are in one-to-one communication with the gas inlets 201, but the present invention is not limited thereto.

[0058] In summary, this embodiment provides a gas transmission system and semiconductor processing equipment, wherein the air inlet end of each air inlet pipeline is connected to a process gas source, and the air outlet end of each air inlet pipeline includes a first branch provided with a first control valve and a plurality of second branches provided with a second control valve. The air inlet end of the first diverter is connected to the first branch of each air inlet pipeline, and the air outlet end of the first diverter is connected to the reaction chamber through a gas supply pipeline; and the second branch of each air inlet pipeline is correspondingly connected to the gas supply pipeline. In this embodiment, the opening and closing of the first control valve and the second control valve on each air inlet pipeline can be controlled according to specific process requirements, so that the process gas supplied by the process gas source can be passed into the reaction chamber through the first diverter or not, thereby making the use of process gas more flexible. In this embodiment, the process gas introduced into the reaction chamber through the first flow divider can be recorded as the main gas, and the process gas introduced into the reaction chamber without the first flow divider can be recorded as the regulating gas. By controlling the opening and closing of the first control valve and the second control valve on each gas inlet pipeline, the main gas and the regulating gas can also be determined. Unlike the prior art, it is not necessary to separately provide a main gas source and a regulating gas source, thereby saving the number of gas sources and reducing the economic cost and space occupied by the gas transmission system. In addition, in this embodiment, the second flow divider can further fine-tune the gas flow rate of the delivery pipeline, thereby serving as an auxiliary regulation function and further ensuring uniform distribution of gas concentration in different areas of the reaction chamber. The second flow divider cooperates with the second branch of the gas inlet pipeline to quickly adjust the gas flow rate of the delivery pipeline, so that the gas concentration in different areas of the reaction chamber is evenly distributed as quickly as possible, thereby improving process efficiency.

[0059] Although the present invention has been described in detail through the above preferred embodiments, it should be understood that the above description should not be considered as limiting the present invention. After reading the above description, various modifications and alternatives to the present invention will be readily apparent to those skilled in the art. Therefore, the scope of protection of the present invention shall be defined by the appended claims.

Claims

1. A gas transmission system, characterized in that: include: A plurality of air inlet pipelines, wherein the air inlet end of each air inlet pipeline is connected to a process gas source, and the air outlet end of each air inlet pipeline includes a first branch and a plurality of second branches; a first flow splitter, whose air inlet end is connected to the first branch of each of the air inlet pipelines, and whose air outlet end is connected to the reaction chamber via a gas delivery pipeline; the number of the gas delivery pipelines and the air outlet ends of the first flow splitter is the same and both are at least two; The number of the second branches of each of the air intake pipelines is the same as the number of the air delivery pipelines, and the second branches of each of the air intake pipelines are correspondingly connected to the air delivery pipelines; each of the first branches is provided with a first control valve, and each of the second branches is provided with a second control valve.

2. The gas transmission system according to claim 1, wherein: A first mass flow controller is provided between the air inlet end and the air outlet end of each of the air inlet pipelines.

3. The gas transmission system according to claim 2, wherein: A first gas valve is provided between the first mass flow controller and the process gas source of each gas inlet pipeline.

4. The gas transmission system according to claim 2, wherein: A second air valve is provided between the air outlet end of each of the air inlet pipelines and the first mass flow controller.

5. The gas transmission system according to claim 1, wherein: Also includes: at least one regulating line and a second flow divider; The gas inlet end of each regulating pipeline is connected to the process gas source; The gas outlet ends of all the regulating pipelines are connected to the gas inlet end of the first flow divider through the same third control valve and are connected to the gas inlet end of the second flow divider through the same fourth control valve; The gas outlet end of the second flow splitter is connected to the gas transmission pipeline through a connecting pipe, and the gas outlet end of the second flow splitter, the connecting pipe and the gas transmission pipeline are the same in number.

6. The gas transmission system according to claim 5, wherein: A second mass flow controller is provided between the air inlet and the air outlet of each regulating pipeline.

7. The gas transmission system according to claim 6, wherein: A third gas valve is provided between the second mass flow controller and the process gas source of each regulating pipeline.

8. The gas transmission system according to claim 6, wherein: A fourth gas valve is provided between the gas outlet end of each regulating pipeline and the second mass flow controller.

9. The gas transmission system according to claim 5, wherein: The first flow divider distributes the process gas introduced into the gas inlet end thereof to each of the gas transmission pipelines in a first preset ratio; The second flow divider distributes the process gas introduced into the gas inlet end thereof to each of the connecting pipes in a second preset ratio, and the second preset ratio is different from the first preset ratio.

10. The gas transmission system according to claim 1, wherein: The process gas transmitted by the gas transmission system includes main gas and / or regulating gas.

11. A semiconductor processing device, characterized in that: include: reaction chamber; A base is provided at the bottom of the reaction chamber and is used to support the substrate; The gas delivery system according to any one of claims 1 to 10, connected to a process gas source and the reaction chamber, for passing process gas into the reaction chamber to process the substrate.

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