Gallium arsenide polycrystal synthesis device

Abstract

The utility model belongs to the technical field of gallium arsenide polycrystal synthesis, and particularly relates to a gallium arsenide polycrystal synthesis device which comprises an isostatic pressing graphite synthesis cavity, a baffle is slidably mounted on one side of the isostatic pressing graphite synthesis cavity, and a vacuum pump is fixedly mounted on one side of the isostatic pressing graphite synthesis cavity. An argon box is fixedly mounted at the top of the isostatic pressing graphite synthesis cavity; the synthesis mechanism is used for synthesizing gallium arsenide polycrystals; the synthesis mechanism comprises an isostatic pressing graphite tray; a plurality of quartz tubes participate in gallium arsenide polycrystal synthesis work, so that the yield can be ensured, the risk of breakage of large-size quartz tubes is avoided, and a first electric telescopic rod extends to drive a baffle to move along a first groove so as to prevent the baffle from affecting the quartz tubes placed in an isostatic pressing graphite synthesis cavity; and then a bidirectional threaded rod is driven by an output shaft of a fourth motor to rotate, and two sliding blocks slide along a sixth groove and get close to each other, so that the quartz tube is clamped by two clamping plates.

Description

Technical Field

[0001] The utility model belongs to the technical field of gallium arsenide, in particular to a gallium arsenide polycrystal synthesis device. Background Art

[0002] Gallium arsenide (GaAs) is an important semiconductor material widely used in high-frequency electronic devices and optoelectronic devices. Compared with silicon (Si), GaAs has higher electron mobility and saturation electron velocity, so it performs well in high-frequency and high-power applications.

[0003] After searching, the patent document with publication number CN 108570708 A discloses a gallium arsenide polycrystal synthesis device, which includes a heating device, a reaction container and a containing container. The heating device has a heating chamber, the reaction container is installed in the heating chamber, the reaction container has an upper chamber and a lower chamber connected to each other, the containing container is installed in the upper chamber, and the containing container is provided with an upward opening, and the opening is connected to the upper chamber.

[0004] Existing gallium arsenide polycrystal synthesis equipment uses the vertical Bridgman method to perform polycrystal synthesis in principle to increase production output. Moreover, since the polycrystalline material is formed in a holding container, it can be fully matched with the holding container when the single crystal is loaded, thereby increasing the feed amount per furnace and reducing the single crystal production cost. However, existing synthesis equipment generally uses a single reaction container, which not only reduces the reaction capacity, but also causes a large amount of raw material waste if the reaction container is damaged during the reaction.

[0005] Therefore, in order to solve the above problems, a gallium arsenide polycrystal synthesis device is proposed. Utility Model Content

[0006] In order to make up for the deficiencies of the existing technology and solve the existing problems, a gallium arsenide polycrystal synthesis device is proposed.

[0007] The technical solution adopted by the utility model to solve the technical problem is as follows: the gallium arsenide polycrystal synthesis device described in the utility model includes an isostatic graphite synthesis chamber, a baffle is slidably installed on one side of the isostatic graphite synthesis chamber, a vacuum pump is fixedly installed on one side of the isostatic graphite synthesis chamber, and an argon box is fixedly installed on the top of the isostatic graphite synthesis chamber;

[0008] Also included is a synthesis mechanism for synthesizing gallium arsenide polycrystals;

[0009] The synthesis mechanism includes an isostatic graphite tray, which is rotatably mounted on the bottom wall of an isostatic graphite synthesis chamber. Six quartz tubes are movably mounted on the top of the isostatic graphite tray, and several isostatic graphite heating elements are fixedly mounted on the side walls of the isostatic graphite synthesis chamber.

[0010] In some embodiments, a first groove is opened on one side of the isostatic graphite synthesis chamber, the baffle is slidably installed on the inner surface of the first groove, two first fixed blocks are fixedly installed on one side of the baffle, a connecting rod is rotatably installed on the inner surface of the first fixed block, the opposite surfaces of the two connecting rods are connected to a rotating shaft for common rotation, and a cylinder is fixedly installed on one end of the connecting rod.

[0011] In some embodiments, a third fixed block is fixedly installed on one side of the isostatic graphite synthesis chamber, a first electric telescopic rod is rotatably installed in the middle of the third fixed block, a third groove is opened at one end of the first electric telescopic rod, and the rotating shaft is rotatably installed on the inner surface of the third groove. Two second fixed blocks are fixedly installed on one side of the isostatic graphite synthesis chamber, a second groove is opened on one side of the second fixed block, the cylinder is rotatably installed on the inner surface of the second groove, and one end of the connecting rod is slidably installed on the inner surface of the second groove.

[0012] In some embodiments, an air outlet pipe and an air intake pipe are fixedly installed on the top of the vacuum pump, and the air intake pipe penetrates into the inner cavity of the isostatic graphite synthesis chamber, and the inner cavity is connected with the inner cavity of the isostatic graphite synthesis chamber.

[0013] In some embodiments, six fourth grooves are opened on the top of the isostatic graphite tray, the quartz tube is slidably installed on the inner surface of the fourth groove, and one of the isostatic graphite heating elements is fixedly installed on the top of the isostatic graphite tray.

[0014] In some embodiments, a worm gear is fixedly connected to the bottom of the isostatic graphite tray, and the bottom of the worm gear is rotatably mounted on the bottom wall of the isostatic graphite synthesis chamber. The worm gear is engaged with a worm, and one end of the worm is fixedly connected to a first motor, and the first motor is fixedly mounted on the side wall of the isostatic graphite synthesis chamber. The other end of the worm is rotatably connected to a fourth fixed block, and the fourth fixed block is fixedly mounted on the bottom wall of the isostatic graphite synthesis chamber.

[0015] In some embodiments, a fifth fixed block is fixedly installed on the top of the isostatic graphite synthesis chamber, a fifth groove is opened on one side of the fifth fixed block, a rack is slidably installed on the inner surface of the fifth groove, the rack is engaged with a gear, a second motor is fixedly connected to one side of the gear, a sixth fixed block is fixedly connected to one side of the second motor, and the sixth fixed block is fixedly installed on the top of the isostatic graphite synthesis chamber.

[0016] In some embodiments, a third motor is fixedly installed at the bottom of the rack, the output shaft of the third motor is fixedly connected to the second electric telescopic rod, the output shaft of the second electric telescopic rod is fixedly connected to the connecting block, a sixth groove is opened on one side of the connecting block, and two sliders are slidably installed on the inner surface of the sixth groove.

[0017] In some embodiments, a seventh groove is provided on one side of the slider, and a bidirectional threaded rod is threadedly connected to the inner surface of the seventh groove. One end of the bidirectional threaded rod is rotatably installed on the inner surface of the sixth groove, and the other end of the bidirectional threaded rod passes through the connecting block and is fixedly connected to a fourth motor. The fourth motor is fixedly installed on one side of the connecting block.

[0018] In some embodiments, two support plates are fixedly installed on one side of the bidirectional threaded rod, an eighth groove is opened on one side of the slider, a sliding rod is slidably installed on the inner surface of the eighth groove, both ends of the sliding rod are respectively fixedly installed on one side of the two support plates, and a splint is fixedly installed on one side of the slider.

[0019] Beneficial effects of the utility model:

[0020] 1. The utility model provides a gallium arsenide polycrystal synthesis device, which can ensure the output and avoid the risk of large-sized quartz tubes breaking by involving multiple quartz tubes in the gallium arsenide polycrystal synthesis work. The first electric telescopic rod is extended to drive the baffle to move along the first groove to prevent the baffle from affecting the placement of the quartz tube in the isostatic graphite synthesis chamber. Then, the bidirectional threaded rod is rotated by the fourth motor output shaft, and the two sliders slide along the sixth groove and approach each other so that the two clamps clamp the quartz tube. Then, the third motor output shaft drives the second electric telescopic rod to rotate, and the second motor output shaft drives the gear to rotate. The gear is engaged with the rack to drive the rack to move the third motor, so that the quartz tube is at the top of the fourth groove. Then, the second electric telescopic rod is extended to place the quartz tube in the fourth groove.

[0021] 2. The utility model provides a gallium arsenide polycrystal synthesis device, which rotates a worm through the output shaft of a first motor, and the worm and the worm wheel cooperate to rotate the isostatic graphite tray, and the fourth groove where no quartz tube is placed is turned to the side close to the baffle, so as to facilitate further placement of the quartz tube in the fourth groove. After the placement is completed, the baffle slides along the first groove through the contraction of the first electric telescopic rod, so that the isostatic graphite synthesis chamber is in a sealed state, and then the vacuum pump puts the isostatic graphite synthesis chamber into a vacuum state, and inputs argon gas into the isostatic graphite synthesis chamber through the isostatic graphite heating element to put the isostatic graphite synthesis chamber into a high-temperature state, which is convenient for synthesizing gallium arsenide polycrystals. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] The drawings described herein are used to provide a further understanding of the present invention and constitute a part of this application. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation of the present invention. In the drawings:

[0023] Figure 1 It is a schematic diagram of the overall structure of the utility model;

[0024] Figure 2 This is a schematic diagram of the baffle sliding structure of the utility model;

[0025] Figure 3 This is a schematic diagram of the vacuum pump connection structure of the utility model;

[0026] Figure 4 This is a schematic diagram of the internal structure of the isostatic graphite synthesis chamber of the utility model;

[0027] Figure 5 This is a schematic diagram of the connection structure of the isostatic graphite tray of the utility model;

[0028] Figure 6 This is a schematic diagram of the second motor drive structure of the present utility model;

[0029] Figure 7 It is a schematic diagram of the splint connection structure of the present utility model.

[0030] Legend: 1. Isostatic graphite synthesis chamber; 11. First groove; 2. Baffle; 21. First fixing block; 22. Connecting rod; 23. Cylinder; 24. Second fixing block; 241. Second groove; 25. Rotating shaft; 26. First electric telescopic rod; 261. Third groove; 27. Third fixing block; 3. Vacuum pump; 31. Exhaust pipe; 32. Intake pipe; 4. Isostatic graphite heating element; 5. Isostatic graphite tray; 51. Fourth groove; 6. Quartz tube; 7. Worm gear; 71. Worm; 72 , fourth fixed block; 73, first motor; 8, fifth fixed block; 81, fifth groove; 82, second motor; 821, sixth fixed block; 83, gear; 831, rack; 84, third motor; 85, second electric telescopic rod; 86, connecting block; 861, sixth groove; 862, slider; 8621, seventh groove; 8622, eighth groove; 8623, support plate; 8624, slide rod; 863, bidirectional threaded rod; 864, fourth motor; 865, splint; 9, argon box. DETAILED DESCRIPTION

[0031] The following will be combined with the accompanying drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the embodiments described are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0032] Specific examples are given below.

[0033] See also Figure 1-Figure 7The present invention provides a gallium arsenide polycrystal synthesis device, comprising an isostatic graphite synthesis chamber 1, a baffle 2 being slidably mounted on one side of the isostatic graphite synthesis chamber 1, a vacuum pump 3 being fixedly mounted on one side of the isostatic graphite synthesis chamber 1, and an argon box 9 being fixedly mounted on the top of the isostatic graphite synthesis chamber 1;

[0034] Also included is a synthesis mechanism for synthesizing gallium arsenide polycrystals;

[0035] The synthesis mechanism includes an isostatic graphite tray 5, which is rotatably mounted on the bottom wall of the isostatic graphite synthesis chamber 1. Six quartz tubes 6 are movably mounted on the top of the isostatic graphite tray 5, and several isostatic graphite heating elements 4 are fixedly mounted on the side walls of the inner cavity of the isostatic graphite synthesis chamber 1.

[0036] When synthesizing GaAs polycrystals, gallium and arsenic are often placed in a single quartz tube, followed by a solid-phase reaction during heating. High vapor pressure during the synthesis process can easily cause the quartz tube to crack, and the volatilized arsenic is toxic, so high-quality quartz tubes are required.

[0037] When the utility model is in use, the gallium arsenide polycrystal raw material is first placed in the isostatic graphite synthesis chamber 1 by moving the baffle 2, and then the isostatic graphite synthesis chamber 1 is sealed. First, the inner cavity of the isostatic graphite synthesis chamber 1 is placed in a vacuum state by the vacuum pump 3, and then argon gas is input into the isostatic graphite synthesis chamber 1 by 9, and the inner cavity of the isostatic graphite synthesis chamber 1 is heated by a number of isostatic graphite heating elements 4, so that the inner cavity of the isostatic graphite synthesis chamber 1 is at a temperature capable of synthesizing gallium arsenide polycrystals. After the synthesis of the gallium arsenide polycrystals is completed, the heat preservation work is first performed, and then the temperature in the isostatic graphite synthesis chamber 1 is gradually reduced to room temperature by moving the baffle 2.

[0038] In some embodiments, as Figure 2 As shown, a first groove 11 is opened on one side of the isostatic graphite synthesis chamber 1, and the baffle 2 is slidably installed on the inner surface of the first groove 11. Two first fixed blocks 21 are fixedly installed on one side of the baffle 2. A connecting rod 22 is rotatably installed on the inner surface of the first fixed block 21. The opposite surfaces of the two connecting rods 22 are connected to a rotating shaft 25 for common rotation, and a cylinder 23 is fixedly installed on one end of the connecting rod 22.

[0039] A third fixed block 27 is fixedly installed on one side of the isostatic graphite synthesis chamber 1, and a first electric telescopic rod 26 is rotatably installed in the middle of the third fixed block 27. A third groove 261 is provided at one end of the first electric telescopic rod 26, and the rotating shaft 25 is rotatably installed on the inner surface of the third groove 261. Two second fixed blocks 24 are fixedly installed on one side of the isostatic graphite synthesis chamber 1, and a second groove 241 is provided on one side of the second fixed block 24. The cylinder 23 is rotatably installed on the inner surface of the second groove 241, and one end of the connecting rod 22 is slidably installed on the inner surface of the second groove 241.

[0040] When the present invention is in use, when it is necessary to move the baffle 2, the first electric telescopic rod 26 is extended, the rotating shaft 25 rotates on the inner surface of the third groove 261, and one end of the connecting rod 22 slides on the inner surface of the second groove 241. When the connecting rod 22 slides, the cylinder 23 rotates and slides on the inner surface of the second groove 241. The first electric telescopic rod 26 and one end of the connecting rod 22 rotate on the third fixed block 27 and the middle of the first fixed block 21 respectively. Since the interior of the entire device is in a high temperature state during the synthesis of gallium arsenide polycrystals, the movement of the baffle 2 is controlled by extending and shortening the first electric telescopic rod 26 to avoid high temperature burns to the staff.

[0041] In some embodiments, as Figure 3 As shown, an air outlet pipe 31 and an air intake pipe 32 are fixedly installed on the top of the vacuum pump 3 , and the air intake pipe 32 penetrates into the inner cavity of the isostatic graphite synthesis chamber 1 , and the inner cavity of the 9 is connected with the inner cavity of the isostatic graphite synthesis chamber 1 .

[0042] When the utility model is in use, the air in the isostatic graphite synthesis chamber 1 is first sucked out through the suction pipe 32 to put the isostatic graphite synthesis chamber 1 into a vacuum state, and then argon gas is input into the isostatic graphite synthesis chamber 1 to further ensure the synthesis quality of gallium arsenide polycrystals.

[0043] In some embodiments, as Figure 4 As shown, six fourth grooves 51 are opened on the top of the isostatic graphite tray 5 , and the quartz tube 6 is slidably installed on the inner surface of the fourth groove 51 , and one of the isostatic graphite heating elements 4 is fixedly installed on the top of the isostatic graphite tray 5 .

[0044] When the utility model is in use, the inner cavity of the isostatic graphite synthesis chamber 1 is kept in a high temperature state by a plurality of isostatic graphite heating elements 4 , and the quartz tube 6 containing gallium arsenide polycrystalline raw material can be placed in the fourth groove 51 .

[0045] In some embodiments, as Figure 5As shown, the bottom of the isostatic graphite tray 5 is fixedly connected to a worm gear 7, and the bottom of the worm gear 7 is rotatably mounted on the bottom wall of the inner cavity of the isostatic graphite synthesis chamber 1. The worm gear 7 is engaged with a worm 71, and one end of the worm 71 is fixedly connected to a first motor 73, and the first motor 73 is fixedly mounted on the side wall of the inner cavity of the isostatic graphite synthesis chamber 1. The other end of the worm 71 is rotatably connected to a fourth fixed block 72, and the fourth fixed block 72 is fixedly mounted on the bottom wall of the inner cavity of the isostatic graphite synthesis chamber 1.

[0046] When the utility model is in use, the worm 71 is driven to rotate by the output shaft of the first motor 73, and the worm 71 is engaged with the worm wheel 7. In some embodiments, the first motor 73 can drive the isostatic graphite tray 5 to rotate, making it convenient for the staff to place the quartz tube 6 on the fourth groove 51.

[0047] In some embodiments, as Figure 6 and Figure 7 As shown, a fifth fixed block 8 is fixedly installed on the top of the isostatic graphite synthesis chamber 1, and a fifth groove 81 is opened on one side of the fifth fixed block 8. A rack 831 is slidably installed on the inner surface of the fifth groove 81. The rack 831 is engaged with a gear 83. A second motor 82 is fixedly connected to one side of the gear 83. A sixth fixed block 821 is fixedly connected to one side of the second motor 82. The sixth fixed block 821 is fixedly installed on the top of the isostatic graphite synthesis chamber 1;

[0048] A third motor 84 is fixedly mounted at the bottom of the rack 831. The output shaft of the third motor 84 is fixedly connected to a second electric telescopic rod 85. The output shaft of the second electric telescopic rod 85 is fixedly connected to a connecting block 86. A sixth groove 861 is formed on one side of the connecting block 86. Two sliders 862 are slidably mounted on the inner surface of the sixth groove 861.

[0049] A seventh groove 8621 is formed on one side of the slider 862. A bidirectional threaded rod 863 is threadedly connected to the inner surface of the seventh groove 8621. One end of the bidirectional threaded rod 863 is rotatably mounted on the inner surface of the sixth groove 861. The other end of the bidirectional threaded rod 863 passes through the connecting block 86 and is fixedly connected to a fourth motor 864. The fourth motor 864 is fixedly mounted on one side of the connecting block 86.

[0050] Two support plates 8623 are fixedly installed on one side of the bidirectional threaded rod 863, an eighth groove 8622 is opened on one side of the slider 862, a sliding rod 8624 is slidably installed on the inner surface of the eighth groove 8622, and both ends of the sliding rod 8624 are respectively fixedly installed on one side of the two support plates 8623, and a splint 865 is fixedly installed on one side of the slider 862.

[0051] When the present invention is in use, the output shaft of the fourth motor 864 drives the bidirectional threaded rod 863 to rotate, so that the two sliders 862 are moved closer to each other, further driving the two clamping plates 865 to move closer to each other and clamping the quartz tube 6. The sliding rod 8624 can make the sliding of the two sliders 862 more stable. After the quartz tube 6 is clamped, the height of the quartz tube 6 can be changed by extending and shortening the second electric telescopic rod 85. The output shaft of the second motor 82 drives the gear 83 to rotate to cooperate with the rack 831 to drive the rack 831 to move. In some embodiments, the rack 831 can drive the third motor 84 to move, and the direction of the clamping plate 865 can be changed by the output of the third motor 84. When the quartz tube 6 is installed in the fourth groove 51, the third motor 84 and the second motor 82 are first used to make the quartz tube 6 at the top of the fourth groove 51. Then the second electric telescopic rod 85 is extended to slowly place the quartz tube 6 into the fourth groove 51. After repeating this many times, all quartz tubes 6 can be placed in the fourth groove 51.

[0052] Working principle: When the present invention is in use, the first electric telescopic rod 26 is extended to drive the baffle 2 to move along the first groove 11 to prevent the baffle 2 from affecting the quartz tube 6 placed in the isostatic graphite synthesis chamber 1, and then the bidirectional threaded rod 863 is rotated by the output shaft of the fourth motor 864, and the two sliders 862 slide along the sixth groove 861 and approach each other so that the two clamps 865 clamp the quartz tube 6, and then the output shaft of the third motor 84 drives the second electric telescopic rod 85 to rotate, and the output shaft of the second motor 82 drives the gear 83 to rotate, and the gear 83 engages with the rack 831 to drive the rack 831 to move with the third motor 84, so that the quartz tube 6 is at the top of the fourth groove 51, and then the second electric telescopic rod 85 is extended to place the quartz tube 6 in the fourth groove 51.

[0053] Each time a quartz tube 6 is placed, the output shaft of the first motor 73 will drive the worm 71 to rotate, and under the cooperation of the worm 71 and the worm gear 7, the worm gear 7 will drive the isostatic graphite tray 5 to rotate, and the fourth groove 51 where no quartz tube 6 is placed is turned to the side close to the baffle 2, so as to facilitate further placement of the quartz tube 6 in the fourth groove 51. After the placement is completed, the baffle 2 is contracted by the first electric telescopic rod 26 to slide along the first groove 11 so that the isostatic graphite synthesis chamber 1 is in a sealed state, and then the vacuum pump 3 makes the isostatic graphite synthesis chamber 1 in a vacuum state, and 9 inputs argon gas into the inner cavity of the isostatic graphite synthesis chamber 1 through the isostatic graphite heating element 4 to make the isostatic graphite synthesis chamber 1 in a high temperature state, so as to facilitate the synthesis of gallium arsenide polycrystals.

[0054] The above shows and describes the basic principles, main features and advantages of the present invention. Those skilled in the art should understand that the present invention is not limited to the above embodiments. The above embodiments and descriptions are merely illustrative of the principles of the present invention. Various changes and improvements may be made to the present invention without departing from the spirit and scope of the present invention, and such changes and improvements fall within the scope of the present invention as claimed.

Claims

1. A gallium arsenide polycrystal synthesis device, comprising an isostatic graphite synthesis chamber (1), a baffle (2) being slidably mounted on one side of the isostatic graphite synthesis chamber (1), a vacuum pump (3) being fixedly mounted on one side of the isostatic graphite synthesis chamber (1), and an argon box (9) being fixedly mounted on the top of the isostatic graphite synthesis chamber (1); Also included is a synthesis mechanism for synthesizing gallium arsenide polycrystals; Its characteristics are: The synthesis mechanism comprises an isostatic graphite tray (5), the isostatic graphite tray (5) is rotatably mounted on the bottom wall of the inner cavity of the isostatic graphite synthesis chamber (1), six quartz tubes (6) are movably mounted on the top of the isostatic graphite tray (5), and a plurality of isostatic graphite heating elements (4) are fixedly mounted on the side wall of the inner cavity of the isostatic graphite synthesis chamber (1).

2. The gallium arsenide polycrystal synthesis device according to claim 1, characterized in that: A first groove (11) is provided on one side of the isostatic graphite synthesis chamber (1); the baffle (2) is slidably mounted on the inner surface of the first groove (11); two first fixed blocks (21) are fixedly mounted on one side of the baffle (2); a connecting rod (22) is rotatably mounted on the inner surface of the first fixed block (21); the two connecting rods (22) are rotatably connected to a rotating shaft (25) at opposite surfaces; and a cylinder (23) is fixedly mounted on one end of the connecting rod (22).

3. The gallium arsenide polycrystal synthesis device according to claim 2, characterized in that: A third fixed block (27) is fixedly installed on one side of the isostatic graphite synthesis chamber (1), a first electric telescopic rod (26) is rotatably installed in the middle of the third fixed block (27), a third groove (261) is provided at one end of the first electric telescopic rod (26), and the rotating shaft (25) is rotatably installed on the inner surface of the third groove (261). Two second fixed blocks (24) are fixedly installed on one side of the isostatic graphite synthesis chamber (1), a second groove (241) is provided at one side of the second fixed block (24), the cylinder (23) is rotatably installed on the inner surface of the second groove (241), and one end of the connecting rod (22) is slidably installed on the inner surface of the second groove (241).

4. The gallium arsenide polycrystal synthesis device according to claim 3, characterized in that: An air outlet pipe (31) and an air intake pipe (32) are fixedly mounted on the top of the vacuum pump (3); the air intake pipe (32) penetrates the inner cavity of the isostatic graphite synthesis chamber (1); and the inner cavity of the (9) is in communication with the inner cavity of the isostatic graphite synthesis chamber (1).

5. The gallium arsenide polycrystal synthesis device according to claim 4, characterized in that: Six fourth grooves (51) are provided on the top of the isostatic graphite tray (5), the quartz tube (6) is slidably mounted on the inner surface of the fourth groove (51), and one of the isostatic graphite heating elements (4) is fixedly mounted on the top of the isostatic graphite tray (5).

6. The gallium arsenide polycrystal synthesis device according to claim 5, characterized in that: The bottom of the isostatic graphite tray (5) is fixedly connected to a worm gear (7), and the bottom of the worm gear (7) is rotatably mounted on the bottom wall of the inner cavity of the isostatic graphite synthesis chamber (1). The worm gear (7) is meshed with a worm (71), and one end of the worm gear (71) is fixedly connected to a first motor (73), and the first motor (73) is fixedly mounted on the side wall of the inner cavity of the isostatic graphite synthesis chamber (1). The other end of the worm gear (71) is rotatably connected to a fourth fixed block (72), and the fourth fixed block (72) is fixedly mounted on the bottom wall of the inner cavity of the isostatic graphite synthesis chamber (1).

7. The gallium arsenide polycrystal synthesis device according to claim 6, characterized in that: A fifth fixed block (8) is fixedly installed on the top of the isostatic graphite synthesis chamber (1), a fifth groove (81) is opened on one side of the fifth fixed block (8), a rack (831) is slidably installed on the inner surface of the fifth groove (81), the rack (831) is engaged with a gear (83), a second motor (82) is fixedly connected to one side of the gear (83), a sixth fixed block (821) is fixedly connected to one side of the second motor (82), and the sixth fixed block (821) is fixedly installed on the top of the isostatic graphite synthesis chamber (1).

8. The gallium arsenide polycrystal synthesis device according to claim 7, characterized in that: A third motor (84) is fixedly mounted on the bottom of the rack (831); an output shaft of the third motor (84) is fixedly connected to a second electric telescopic rod (85); an output shaft of the second electric telescopic rod (85) is fixedly connected to a connecting block (86); a sixth groove (861) is provided on one side of the connecting block (86); and two sliders (862) are slidably mounted on the inner surface of the sixth groove (861).

9. The gallium arsenide polycrystal synthesis device according to claim 8, characterized in that: A seventh groove (8621) is provided on one side of the slider (862), and a bidirectional threaded rod (863) is threadedly connected to the inner surface of the seventh groove (8621). One end of the bidirectional threaded rod (863) is rotatably mounted on the inner surface of the sixth groove (861), and the other end of the bidirectional threaded rod (863) passes through the connecting block (86) and is fixedly connected to a fourth motor (864), and the fourth motor (864) is fixedly mounted on one side of the connecting block (86).

10. The gallium arsenide polycrystal synthesis device according to claim 9, characterized in that: Two support plates (8623) are fixedly installed on one side of the bidirectional threaded rod (863), an eighth groove (8622) is opened on one side of the slider (862), a sliding rod (8624) is slidably installed on the inner surface of the eighth groove (8622), and both ends of the sliding rod (8624) are fixedly installed on one side of the two support plates (8623), and a splint (865) is fixedly installed on one side of the slider (862).

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