Photoelectrocatalysis-assisted chemical mechanical polishing device

Abstract

The utility model provides a photoelectrocatalysis assisted chemical mechanical polishing device which comprises a platform, a polishing disc, a transparent polishing pad, a polishing head, a photosensitive polishing solution swing arm and an ultraviolet lamp bead, the polishing disc is rotationally connected to the upper portion of the platform, and the transparent polishing pad is arranged on the polishing disc in a stacked mode. The photosensitive polishing liquid swing arm is connected to the platform and used for spraying polishing liquid to the transparent polishing pad layer, a liquid passing hole is formed in the transparent polishing pad layer in a penetrating mode, the polishing head is connected with the positive electrode of the power source, the polishing disc is connected with the negative electrode of the power source, and the ultraviolet lamp beads are embedded in the polishing disc. According to the photoelectrocatalysis-assisted chemical mechanical polishing device provided by the utility model, the photosensitive polishing solution swing arm is used for spraying the photosensitive polishing solution, and the ultraviolet lamp beads are arranged on the polishing disc, so that ultraviolet light irradiates the photosensitive polishing solution or a wafer below the polishing head through the transparent polishing pad, and strong-oxidation active groups are synchronously generated; the oxidation rate of silicon carbide on the surface of the wafer is improved, and the polishing efficiency of the wafer is improved.

Description

Technical Field

[0001] The utility model belongs to the technical field of wafer polishing, and more specifically relates to a photoelectric catalytic assisted chemical mechanical polishing device. Background Art

[0002] Due to the brittle and hard characteristics of SiC and its chemical properties that are difficult to oxidize, the electrochemical anodic oxidation principle is required during the electrochemical mechanical polishing (ECMP) process of SiC semiconductor wafers to corrode and oxidize the SiC surface into SiO2 with lower hardness, which can then be removed through subsequent mechanical grinding to achieve SiC flatness.

[0003] Currently, the polishing fluids commonly used in chemical mechanical polishing (CMP) on the market are mostly potassium permanganate (KMnO4) solutions with a certain amount of abrasives, such as ceria (CeO2) and silica (SiO2). The trivalent cerium ions in ceria abrasives have a unique oxidizing effect on the silica oxide layer, allowing a chemical reaction between the two to promote chemical mechanical action and improve material removal rates. Since silica abrasives share the same properties and hardness as the oxide layer, they can also be used to remove oxide films.

[0004] Under the premise of cost control, the material removal rate of silicon carbide substrates has reached its limit in traditional chemical mechanical polishing processes. Although electrochemical mechanical polishing can increase the oxidation rate, its hardware conductivity modification design is cumbersome. In actual operation, there is a significant voltage reduction effect, which can easily lead to uneven oxidation of the silicon carbide surface, resulting in the substrate's surface shape and roughness indicators failing to meet quality requirements. Utility Model Content

[0005] The purpose of the utility model is to provide a photoelectrocatalytic assisted chemical mechanical polishing device, which can effectively improve the polishing efficiency of wafers and ensure the polishing quality of wafers.

[0006] To achieve the above-mentioned purpose, the technical solution adopted by the utility model is: to provide a photoelectrocatalytic assisted chemical mechanical polishing device, including a platform, a polishing disc, a transparent polishing pad, a polishing head, a photosensitive polishing liquid swing arm and ultraviolet lamp beads. The polishing disc is rotatably connected to the top of the platform, the transparent polishing pad is stacked on the polishing disc, the photosensitive polishing liquid swing arm is connected to the platform and is used to spray polishing liquid onto the transparent polishing pad layer. The transparent polishing pad is penetrated by a liquid hole for the polishing liquid to pass through. The polishing head is connected to the positive pole of the power supply and is used to adsorb the wafer and drive the wafer to rotate. The polishing disc is connected to the negative pole of the power supply. The ultraviolet lamp beads are embedded in the polishing disc and are used to emit ultraviolet light.

[0007] In a possible implementation, the polishing disc is provided with a mounting hole for embedding the ultraviolet lamp beads, and the depth of the mounting hole is greater than or equal to the height of the ultraviolet lamp beads.

[0008] In some embodiments, the top of the mounting hole is covered with a transparent sealing plate, and a sealing ring is sleeved on the outer periphery of the transparent sealing plate, and the sealing ring abuts and seals against the inner peripheral wall of the mounting hole.

[0009] In some embodiments, a pressing and positioning ring is provided on the outer periphery of the ultraviolet lamp bead, and the outer peripheral wall of the pressing and positioning ring abuts against the inner peripheral wall of the mounting hole to limit the ultraviolet lamp bead.

[0010] In a possible implementation, a wire hole connected to the mounting hole is provided on the polishing disc, the wire hole is located below the mounting hole, and a power conducting wire passing through the wire hole is connected below the ultraviolet lamp bead.

[0011] In some embodiments, the polishing disc has a downwardly extending main shaft, a connection bus connected to the lower end of the energized wire is provided in the main shaft, and the connection bus is connected to the positive electrode of the power supply;

[0012] The photoelectrocatalytically assisted chemical mechanical polishing device also includes a controller. A control switch is provided on the connection bus. The controller is electrically connected to the control switch and is used to send control instructions to the control switch.

[0013] In a possible implementation, the photosensitive polishing liquid swing arm is rotatably connected to the platform via a rotating shaft extending in the up-down direction, and the photosensitive polishing liquid swing arm can swing horizontally to spray the photosensitive polishing liquid onto the transparent polishing pad.

[0014] In a possible implementation, a plurality of ultraviolet lamp beads and a plurality of liquid passage holes are provided, and the horizontal projections of the ultraviolet lamp beads and the liquid passage holes are arranged in an interlaced manner.

[0015] In a possible implementation, the diameter of the liquid-passing hole is 0.3-0.8 mm, and a plurality of liquid-passing holes are provided at intervals on the transparent polishing pad.

[0016] In a possible implementation, a pretreatment box is provided at the liquid inlet end of the photosensitive polishing liquid swing arm. An ultraviolet lamp is provided in the pretreatment box. The ultraviolet lamp is used to emit ultraviolet light to irradiate the photosensitive polishing liquid.

[0017] The solution shown in the embodiment of the present application is compared with the prior art. In the photoelectrocatalytic assisted chemical mechanical polishing device provided in the embodiment of the present application, the polishing head and the polishing disk are respectively connected to the positive or negative pole of the power supply to realize electrochemical mechanical polishing. On this basis, a photosensitive polishing liquid swing arm is used to spray the photosensitive polishing liquid, and ultraviolet lamp beads are arranged on the polishing disk, so that ultraviolet light passes through the transparent polishing pad to irradiate the photosensitive polishing liquid or the wafer under the polishing head, and simultaneously generates strongly oxidizing active groups, thereby increasing the oxidation rate of silicon carbide on the wafer surface, and thereby improving the polishing efficiency of the wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the embodiments or descriptions of the prior art. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative labor.

[0019] Figure 1 A schematic diagram of a partial cross-sectional structure of a photoelectrocatalytically assisted chemical mechanical polishing device provided by an embodiment of the present utility model;

[0020] Figure 2 For the embodiment of the utility model Figure 1 Schematic diagram of the partially enlarged structure of middle Ⅰ;

[0021] Figure 3 For the embodiment of the utility model Figure 1 Schematic diagram of the top view of the middle polishing plate.

[0022] Among them, the reference numerals in the figures are:

[0023] 1. Platform; 2. Polishing disc; 21. Mounting hole; 22. Transparent cover plate; 23. Sealing ring; 24. Pressure positioning ring; 25. Wire hole; 26. Power wire; 27. Spindle; 28. Connection bus; 3. Transparent polishing pad; 31. Liquid hole; 4. Polishing head; 5. Photosensitive polishing liquid swing arm; 6. UV lamp beads; 7. Pretreatment box; 71. UV lamp. DETAILED DESCRIPTION

[0024] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention more clearly understood, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention.

[0025] It should be noted that when an element is referred to as being "disposed on" another element, it may be directly on the other element or indirectly on the other element. It should be understood that the terms "length", "width", "upper", "lower", "front", "back", "top", "bottom", "inside", "outside", etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention. The terms "first" and "second" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, "several" means two or more, unless otherwise clearly and specifically defined.

[0026] Please also refer to Figures 1 to 3 The photoelectrocatalytically assisted chemical mechanical polishing device provided by the present invention is now described. The photoelectrocatalytically assisted chemical mechanical polishing device includes a platform 1, a polishing disc 2, a transparent polishing pad 3, a polishing head 4, a photosensitive polishing liquid swing arm 5, and ultraviolet lamp beads 6. The polishing disc 2 is rotatably connected to the top of the platform 1. The transparent polishing pad 3 is stacked on the polishing disc 2. The photosensitive polishing liquid swing arm 5 is connected to the platform 1 and is used to spray polishing liquid onto the transparent polishing pad 3. The transparent polishing pad 3 is penetrated by a liquid hole 31 for the polishing liquid to pass through. The polishing head 4 is connected to the positive pole of the power supply and is used to absorb the wafer and drive the wafer to rotate. The polishing disc 2 is connected to the negative pole of the power supply. The ultraviolet lamp beads 6 are embedded in the polishing disc 2 and are used to emit ultraviolet light.

[0027] The photoelectrocatalytically assisted chemical mechanical polishing device provided in this embodiment is compared with the prior art. The polishing head 4 and the polishing disk 2 are respectively connected to the positive or negative pole of the power supply to realize electrochemical mechanical polishing. On this basis, the photosensitive polishing liquid swing arm 5 is used to spray the photosensitive polishing liquid, and an ultraviolet lamp bead 6 is arranged on the polishing disk 2, so that the ultraviolet light passes through the transparent polishing pad 3 and is irradiated onto the photosensitive polishing liquid or the wafer under the polishing head 4, and strongly oxidizing active groups are simultaneously generated, thereby increasing the oxidation rate of silicon carbide on the wafer surface, thereby improving the polishing efficiency of the wafer.

[0028] In this embodiment, mechanical polishing reduces the Si-C bond energy of the silicon carbide on the wafer surface, lowering the required activation energy for the reaction. Under the influence of ultraviolet light emitted by the UV lamp 6, the photosensitive polishing liquid and the silicon carbide on the wafer surface are excited to produce hydroxyl radicals. This makes it easier for an oxide layer to form on the wafer surface, making it easier to remove it through mechanical polishing and remove it with the photosensitive polishing liquid.

[0029] The UV lamp 6 irradiates the photosensitive polishing liquid and wafers, generating highly oxidizing hydroxyl radicals that rapidly oxidize the silicon carbide on the wafer surface. Instead of using a highly oxidizing polishing liquid, the photosensitive polishing liquid can be replaced with an electrolyte containing abrasive particles and photosensitive semiconductor particles. The photosensitive polishing liquid is formed using a low-cost salt solution with abrasive and a photosensitive catalyst. Using this salt solution can reduce corrosion on machine equipment and significantly reduce waste liquid recycling costs for factories and enterprises.

[0030] Specifically, the photosensitive polishing liquid can use a low-cost, easily recyclable electrolyte, such as a salt solution of sodium sulfate or sodium hydroxide, with a mass fraction of 0.5wt% to 2.0wt%. The abrasive can be one or more of cerium dioxide, silicon dioxide, or aluminum oxide. The photosensitive catalyst commonly uses one or more metal oxides, such as titanium dioxide or zinc oxide, with a concentration of 1g / L to 5g / L.

[0031] The transparent polishing pad 3 is made of a transparent material and adhered to the surface of the polishing plate 2 via a colloid. This minimizes UV light photon energy loss, ensuring optimal illumination and creating the conditions for a photochemical reaction. The UV lamp 6 should be preheated before use to ensure stable photon energy output. Under UV light, the photosensitive catalyst in the polishing solution absorbs energy and becomes excited, generating a large number of electron-hole pairs. These holes oxidize water molecules in the solution and convert them into highly oxidizing hydroxyl radicals, which rapidly oxidize the silicon carbide on the wafer surface.

[0032] During the polishing process, the wafer is adsorbed and loaded onto polishing head 4, which acts as the anode and polishing plate 2 as the cathode. Electrochemical action on the wafer can also generate electron-hole pairs. Electrons generated by the wafer and the photocatalyst in the photosensitive polishing fluid can be transferred through an external circuit to the cathode (polishing plate 2) to participate in the reduction reaction. This can inhibit the recombination of photogenerated electrons and holes to a certain extent, increase the hole concentration, and thus the oxidation rate of the wafer.

[0033] In the above process, photoelectrocatalytic technology is used to polish the wafer, offering the advantages of rapid reaction and simple operation. Its catalytic oxidation effect is far greater than that of traditional chemical mechanical polishing processes, significantly increasing the oxidation rate for difficult-to-oxidize and difficult-to-remove silicon carbide substrates. Active radicals such as hydroxyl radicals generated by ultraviolet light are evenly distributed in the polishing fluid, promoting, to a certain extent, the uniform oxidation of silicon carbide on the wafer surface, thereby controlling the wafer's surface shape and improving the wafer's polishing quality.

[0034] In one possible implementation, please also refer to Figures 1 to 3 The polishing disc 2 is provided with a mounting hole 21 for embedding the ultraviolet lamp bead 6 , and the depth of the mounting hole 21 is greater than or equal to the height of the ultraviolet lamp bead 6 .

[0035] In this embodiment, the polishing disc 2 is made of a conductive metal material, and is usually made of stainless steel. A plurality of mounting holes 21 are provided on the surface of the polishing disc 2 so that the ultraviolet lamp beads 6 can be evenly distributed on the polishing disc 2. The plurality of ultraviolet lamp beads 6 can be arranged in a uniformly dispersed manner such as concentric circles or phylloses on the surface of the polishing disc 2, or can be distributed in a locally concentrated manner such as a fan shape, a circle, or a matrix. The specific number and distribution method of the ultraviolet lamp beads 6 are not limited, as long as it can be ensured that the light spot area generated during the polishing process can completely cover the wafer. Therefore, the distribution area of ​​the ultraviolet lamp beads 6 on the surface of the polishing disc 2 can be increased or decreased according to the size of the polished wafer.

[0036] The cross-sectional shape of the mounting hole 21 is consistent with that of the ultraviolet lamp bead 6 , and the depth of the mounting hole 21 is greater than or equal to the height of the ultraviolet lamp bead, providing sufficient space for the installation of the ultraviolet lamp bead 6 to ensure the flatness of the transparent polishing pad 3 .

[0037] In some embodiments, please refer to Figures 1 to 3 The top of the mounting hole 21 is covered with a transparent sealing plate 22 , and a sealing ring 23 is sleeved on the outer periphery of the transparent sealing plate 22 . The sealing ring 23 abuts against the inner peripheral wall of the mounting hole 21 for sealing.

[0038] In this embodiment, the depth of mounting hole 21 is greater than the height of the UV lamp beads, providing space for the transparent cover plate 22 above. This effectively separates the UV lamp beads 6 from the bottom surface of the transparent polishing pad 3, thereby reducing the risk of leakage and electrical leakage. A sealing ring 23 is provided on the periphery of transparent cover plate 22 to maintain a sealed state within mounting hole 21, effectively separating the photosensitive polishing liquid from the UV lamp beads 6 and preventing any adverse effects of the photosensitive polishing liquid on the UV lamp beads 6.

[0039] In some embodiments, please refer to Figures 1 to 3 The outer periphery of the ultraviolet lamp bead 6 is provided with a pressing and positioning ring 24. The outer peripheral wall of the pressing and positioning ring 24 abuts against the inner peripheral wall of the mounting hole 21 to limit the position of the ultraviolet lamp bead 6. The inner peripheral wall of the pressing and positioning ring 24 sleeved on the outer periphery of the ultraviolet lamp bead 6 abuts against the outer peripheral wall of the ultraviolet lamp bead 6. The outer peripheral wall of the pressing and positioning ring 24 abuts against the inner peripheral wall of the mounting hole 21, which can ensure that the ultraviolet lamp bead 6 is stably located in the mounting hole 21, ensuring the stable irradiation of the photosensitive polishing liquid by ultraviolet light.

[0040] In one possible implementation, please also refer to Figures 1 to 3 The polishing disc 2 is provided with a wire hole 25 connected to the mounting hole 21. The wire hole 25 is located below the mounting hole 21. A power wire 26 is connected to the bottom of the ultraviolet lamp bead 6 and passes through the wire hole 25. The wire hole 25 is connected to the mounting hole 21 for passing the power wire 26. The power wire 26 is correspondingly arranged with the ultraviolet lamp bead 6 to provide power to the ultraviolet lamp bead 6.

[0041] Specifically, the diameter of the wire hole 25 can be selected to be smaller to meet the requirements for the passage of the power wire 26. When there are a large number of ultraviolet lamp beads 6 and a large number of wire holes 25, the above setting has little effect on the bearing capacity of the polishing disc 2.

[0042] In some embodiments, please refer to Figures 1 to 3 The polishing disc 2 has a downwardly extending spindle 27, and a connecting bus 28 connected to the lower end of the power conductor 26 is provided in the spindle 27, and the connecting bus 28 is connected to the positive electrode of the power supply;

[0043] The photoelectrocatalytically assisted chemical mechanical polishing device further includes a controller. A control switch is provided on the connection bus 28. The controller is electrically connected to the control switch and is used to send control instructions to the control switch.

[0044] In this embodiment, to facilitate simultaneous powering of multiple UV lamps 6, the multiple current-carrying conductors 26 are each connected to a connecting bus 28, which is electrically connected to the power source through the longitudinal direction of the connection. Because the spindle 27, driven by the rotating drive element, rotates the polishing plate 2, the connecting bus 28 can be electrically connected to the power source via a structure such as a conductive slip ring. A conductive slip ring, which provides power to the rotating connecting bus 28, is a device capable of transmitting power and signals between a rotating component (i.e., the spindle 27) and a stationary component (the power source). It is particularly suitable for equipment requiring 360-degree, unrestricted, continuous rotation, preventing the rotation of the spindle 27 from interfering with the normal power supply.

[0045] Specifically, the voltage of the power supply for the UV lamp 6 is 10-30V; the intensity of the UV light is 1000mW / cm 2 -2000mW / cm 2 .

[0046] The control switch provided on the connection bus 28 is used to control the on or off of the ultraviolet lamp beads 6 , and a control instruction is sent to the control switch via the controller so as to remotely control the ultraviolet lamp beads 6 .

[0047] In one possible implementation, please also refer to Figures 1 to 3 The photosensitive polishing liquid swing arm 5 is rotatably connected to the platform 1 through a rotating shaft extending in the up and down directions. The photosensitive polishing liquid swing arm 5 can swing horizontally to spray the photosensitive polishing liquid onto the transparent polishing pad 3.

[0048] In this embodiment, the photosensitive polishing liquid swing arm 5 can rotate synchronously with the rotating shaft, that is, swing horizontally, and then sprinkle the photosensitive polishing liquid to different positions of the transparent polishing pad 3, so that the photosensitive polishing liquid can be evenly distributed on the polishing pad, facilitating contact with the rotating and swinging wafer, and ensuring the smooth progress of the wafer polishing action.

[0049] In one possible implementation, please also refer to Figures 1 to 3 Multiple UV lamp beads 6 and multiple liquid passage holes 31 are provided, and the UV lamp beads 6 and the horizontal projections of the liquid passage holes 31 are staggered. The UV lamp beads 6 can illuminate the photosensitive polishing liquid and the surface of the wafer through the transparent polishing pad 3, thereby forming highly oxidizing hydroxyl radicals and improving the oxidation efficiency of silicon carbide on the wafer surface. The UV lamp beads 6 and the liquid passage holes 31 are staggered to prevent direct contact between the photosensitive polishing liquid and the UV lamp beads 6, ensuring the normal use of the UV lamp beads 6.

[0050] In one possible implementation, please also refer to Figures 1 to 3 The liquid holes 31 have a diameter of 0.3-0.8 mm and are spaced apart on the transparent polishing pad 3. These holes are used to store photosensitive polishing liquid, connecting the polishing plate 2 and the polishing head 4, and providing electrical conduction, forming a complete closed circuit and establishing an electrochemical system. The holes are approximately 0.5 mm in diameter and can be distributed in concentric circles, a phyllograph, or other arrangements, without limitation, as long as connectivity is achieved.

[0051] In one possible implementation, please also refer to Figures 1 to 3 A pretreatment box 7 is provided at the liquid inlet end of the photosensitive polishing liquid swing arm 5. An ultraviolet lamp 71 is provided in the pretreatment box 7. The ultraviolet lamp 71 is used to emit ultraviolet light to irradiate the photosensitive polishing liquid.

[0052] In this embodiment, since the polishing liquid has dynamic instability during the flow process, in order to maintain a stable concentration rate of strong oxidizing groups, a pretreatment box 7 is provided, and the photosensitive polishing liquid is irradiated by an ultraviolet lamp 71. Specifically, the pretreatment box 7 is provided with a transparent tube for the photosensitive polishing liquid to flow through, and the ultraviolet lamp 71 can irradiate the photosensitive polishing liquid through the transparent tube.

[0053] The above operation facilitates the stable generation of strong oxidizing radicals, which then reach the surface of the transparent polishing pad 3 through the pipeline of the photosensitive polishing liquid swing arm 5. Sufficient active groups such as hydroxyl radicals can be generated in advance in the photosensitive polishing liquid. The ultraviolet lamp beads 6 can also irradiate the photosensitive polishing liquid reaching the surface of the transparent polishing pad 3 or the wafer under the polishing head 4 to generate hydroxyl radicals. The two modes complement each other and promote the rapid oxidation of silicon carbide on the wafer surface.

[0054] The above are only preferred embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent replacements and improvements made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.

Claims

1. Photoelectrocatalytic assisted chemical mechanical polishing device, characterized in that: The invention comprises a platform (1), a polishing disc (2), a transparent polishing pad (3), a polishing head (4), a photosensitive polishing liquid swing arm (5) and an ultraviolet lamp bead (6), wherein the polishing disc (2) is rotatably connected to the top of the platform (1), the transparent polishing pad (3) is stacked on the polishing disc (2), the photosensitive polishing liquid swing arm (5) is connected to the platform (1) and is used to spray the polishing liquid onto the transparent polishing pad (3) layer, the transparent polishing pad (3) is penetrated by a liquid hole (31) for the polishing liquid to pass through, the polishing head (4) is connected to the positive pole of the power supply and is used to absorb the wafer and drive the wafer to rotate, the polishing disc (2) is connected to the negative pole of the power supply, and the ultraviolet lamp bead (6) is embedded in the polishing disc (2) and is used to emit ultraviolet light.

2. The photoelectrocatalytic assisted chemical mechanical polishing device according to claim 1, wherein: The polishing disc (2) is provided with a mounting hole (21) for embedding the ultraviolet lamp bead (6), and the depth of the mounting hole (21) is greater than or equal to the height of the ultraviolet lamp bead (6).

3. The photoelectrocatalytic assisted chemical mechanical polishing device according to claim 2, wherein: The top of the mounting hole (21) is covered with a transparent sealing plate (22), the outer periphery of the transparent sealing plate (22) is sleeved with a sealing ring (23), and the sealing ring (23) abuts against the inner peripheral wall of the mounting hole (21) to seal.

4. The photoelectrocatalytic assisted chemical mechanical polishing device according to claim 3, wherein: The outer periphery of the ultraviolet lamp bead (6) is provided with a pressing and positioning ring (24), and the outer peripheral wall of the pressing and positioning ring (24) abuts against the inner peripheral wall of the mounting hole (21) to limit the position of the ultraviolet lamp bead (6).

5. The photoelectrocatalytic assisted chemical mechanical polishing device according to claim 2, wherein: The polishing disc (2) is provided with a wire hole (25) communicating with the mounting hole (21); the wire hole (25) is located below the mounting hole (21); and a current-carrying wire (26) passing through the wire hole (25) is connected below the ultraviolet lamp bead (6).

6. The photoelectrocatalytic assisted chemical mechanical polishing device according to claim 5, characterized in that: The polishing disc (2) has a main shaft (27) extending downwards, a connection bus (28) connected to the lower end of the power-carrying wire (26) is provided in the main shaft (27), and the connection bus (28) is connected to the positive electrode of the power supply; The photoelectrocatalytic assisted chemical mechanical polishing device further comprises a controller, a control switch is provided on the connection bus (28), and the controller is electrically connected to the control switch and is used to send control instructions to the control switch.

7. The photoelectrocatalytically assisted chemical mechanical polishing device according to any one of claims 1 to 6, characterized in that: The photosensitive polishing liquid swing arm (5) is rotatably connected to the platform (1) via a rotating shaft extending in the up-down direction, and the photosensitive polishing liquid swing arm (5) can swing horizontally to spray the photosensitive polishing liquid onto the transparent polishing pad (3).

8. The photoelectrocatalytically assisted chemical mechanical polishing device according to any one of claims 1 to 6, characterized in that: A plurality of the ultraviolet lamp beads (6) and the liquid passage holes (31) are respectively provided, and the horizontal projections of the ultraviolet lamp beads (6) and the liquid passage holes (31) are arranged in an interlaced manner.

9. The photoelectrocatalytic assisted chemical mechanical polishing device according to any one of claims 1 to 6, characterized in that: The aperture of the liquid passage hole (31) is 0.3-0.8 mm, and a plurality of the liquid passage holes (31) are arranged at intervals on the transparent polishing pad (3).

10. The photoelectrocatalytic assisted chemical mechanical polishing device according to any one of claims 1 to 6, characterized in that: A pretreatment box (7) is provided at the liquid inlet end of the photosensitive polishing liquid swing arm (5), and an ultraviolet lamp (71) is provided in the pretreatment box (7). The ultraviolet lamp (71) is used to emit ultraviolet light to irradiate the photosensitive polishing liquid.

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