Continuous crystal pulling device

Abstract

The utility model provides a continuous crystal pulling device and relates to the technical field of silicon single crystal preparation. The continuous crystal pulling device comprises a charging barrel, a charging pipe, a guide cylinder and a crucible, the guide cylinder and the feeding barrel are both installed above the crucible, a vibrator is installed in the feeding barrel, a discharging pipe is arranged at the bottom of the feeding barrel, and an electromagnetic valve is installed on the discharging pipe and used for controlling the discharging area of the discharging pipe; one end of the feeding pipe is connected with the discharging pipe, the other end of the feeding pipe extends into the crucible, and the middle section of the feeding pipe is attached to the side wall of the guide cylinder. According to the continuous crystal pulling device provided by the utility model, the technical problems of unstable feeding amount, poor crystal pulling finished product quality and short service life of the feeding pipe in the continuous crystal pulling technology in the prior art are solved.

Description

Technical Field

[0001] The utility model relates to the technical field of silicon single crystal preparation, in particular to a continuous crystal pulling device. Background Art

[0002] Continuous crystal pulling technology enables the simultaneous addition, melting, and single crystal pulling processes, saving time. During the continuous crystal pulling process, if silicon material is not added promptly, the amount of silicon liquid in the crucible will decrease as the ingot length increases. To ensure a constant silicon-liquid interface height within the crucible and achieve continuous crystal pulling, silicon material must be continuously added to the crucible, and the amount added must be consistent with the growth of the ingot.

[0003] At present, the continuous crystal pulling process generally uses a feeding bucket and a feeding tube. One end of the feeding tube is connected to the feeding bucket, and the other end is connected to the crucible. A shaking device is installed in the feeding bucket. The silicon material to be added slides from the feeding bucket under the vibration of the shaking device, passes through the feeding tube and enters the crucible of the crystal pulling furnace, realizing continuous feeding. In theory, the feeding amount is related to the shaking amplitude of the shaking device. The greater the shaking amplitude, the more silicon material is added per unit time. In actual use, due to the natural accumulation of silicon material, the feeding rate cannot remain stable. Sometimes, when the shaking amplitude is small, the smaller particles will suddenly collapse, resulting in a sudden increase in the feeding amount. The addition of a large amount of low-temperature silicon material in a short period of time will affect the thermal balance in the crucible, thereby having a negative impact on the quality of crystal pulling. In addition, the current feeding scheme directly connects the crucible through a feeding tube, and there is no preheating treatment for the silicon material. The temperature at the discharge port of the feeding tube is low due to the influence of the silicon material. The silicon monoxide vapor evaporated in the crucible will solidify at the discharge port of the feeding tube to form attachments. These attachments may fall off and fall into the crucible, affecting the output of the finished crystal pulling product. It will also affect the life of the feeding tube, causing the feeding tube to be easily pulverized prematurely, seriously affecting its service life. Utility Model Content

[0004] The purpose of the utility model is to provide a continuous crystal pulling device to alleviate the technical problems existing in the prior art of continuous crystal pulling technology, such as unstable feeding amount, poor quality of finished crystals or short service life of feeding tubes.

[0005] In order to solve the above technical problems, the technical solution provided by the present invention is:

[0006] The continuous crystal pulling device provided by the utility model comprises a feeding barrel, a feeding pipe, a guide tube and a crucible;

[0007] The guide tube and the feeding barrel are both installed above the crucible. A vibrator is installed in the feeding barrel, and a discharge pipe is provided at the bottom. The discharge pipe is installed with a solenoid valve, and the solenoid valve is used to control the discharge area of ​​the discharge pipe.

[0008] One end of the feeding pipe is connected to the discharging pipe, and the other end extends into the crucible. The middle section of the feeding pipe is in contact with the side wall of the guide tube.

[0009] Furthermore, the area where the solenoid valve contacts the granular silicon material is made of non-metallic material.

[0010] Furthermore, the discharge pipe is also installed with a solid flow meter, and the solenoid valve and the solid flow meter are spaced apart and signal-connected.

[0011] Furthermore, along the flow direction of the granular silicon material in the discharge pipe, the solid flow meter is located downstream of the solenoid valve.

[0012] Furthermore, the continuous crystal pulling device further includes a control mechanism, which is signal-connected to the solenoid valve and the solid flow meter; wherein:

[0013] The solid flow meter is used to obtain the flow signal flowing through the discharge pipe per unit time and send it to the control mechanism;

[0014] The control mechanism adjusts the current used to control the solenoid valve according to the flow signal and sends the current to the solenoid valve, and the solenoid valve adjusts the discharge area of ​​the discharge pipe.

[0015] Furthermore, the feeding tube is spiral-shaped.

[0016] Furthermore, the feeding pipe is spirally arranged on the outer wall of the guide tube.

[0017] Furthermore, the helix angle of the feeding tube is set to 20-60°.

[0018] Furthermore, the guide tube is a double-layer structure, including an inner tube and an outer tube, the outer tube is sleeved on the outside of the inner tube, and the feeding pipe is installed between the outer tube and the inner tube.

[0019] Furthermore, an electronic scale is provided in the feeding barrel.

[0020] Based on the above technical solutions, the technical effects that can be achieved by this utility model are analyzed as follows:

[0021] The continuous crystal pulling device provided by the present invention includes a feeding barrel, a feeding pipe, a guide tube and a crucible; the guide tube and the feeding barrel are both installed above the crucible, a vibrator is installed in the feeding barrel, and a discharge pipe is provided at the bottom, the discharge pipe is installed with a solenoid valve, and the solenoid valve is used to control the discharge area of ​​the discharge pipe; one end of the feeding pipe is connected to the discharge pipe, and the other end extends into the crucible, and the middle section of the feeding pipe is in contact with the side wall of the guide tube. When using the continuous crystal pulling device, the granular silicon material to be added is added to the feeding barrel. Under the vibration action of the vibrator and the action of its own gravity, the granular silicon material enters the feeding pipe through the discharge pipe at the bottom of the feeding barrel, and then enters the crucible through the feeding pipe. The discharge pipe is equipped with a solenoid valve, which can control the flow rate of the granular silicon material by controlling the discharge area of ​​the discharge pipe, thereby controlling the uniform addition rate of the granular silicon material, and avoiding the reduction of the crystal pulling quality due to the change of the feeding rate. The feeding tube is fitted with the side wall of the guide tube, so that the granular silicon material is preheated during the feeding process, which can effectively reduce the solidification of oxidizing gas at the discharge port of the feeding tube, avoid the formation of attachments that cause the feeding tube to become pulverized, and extend the service life of the feeding tube; in addition, by effectively reducing the attachments at the discharge port of the feeding tube, it can prevent the attachments from falling off and falling into the crucible, thereby improving the growth environment during crystal pulling preparation and helping to improve the quality of the finished crystal pulled product. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] In order to more clearly illustrate the specific implementation methods of the utility model or the technical solutions in the prior art, the drawings required for use in the specific implementation methods or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some implementation methods of the utility model. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0023] Figure 1 This is a schematic structural diagram of a continuous crystal pulling device provided in an embodiment of the present utility model.

[0024] icon:

[0025] 100-feeding barrel; 110-discharge pipe; 111-solenoid valve; 112-solid flow meter;

[0026] 200-feeding tube;

[0027] 300-guide tube;

[0028] 400-crucible; 410-heater;

[0029] a-vertical direction. DETAILED DESCRIPTION

[0030] To make the purpose, technical solutions, and advantages of the embodiments of the present invention more clear, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Generally, the components of the embodiments of the present invention described and shown in the drawings herein can be arranged and designed in various different configurations.

[0031] The following embodiments of the present invention are described in detail with reference to the accompanying drawings. In the absence of conflict, the following embodiments and features in the embodiments may be combined with each other.

[0032] During the continuous crystal pulling process, if silicon material is not added in a timely manner, the amount of silicon liquid in the crucible will decrease as the length of the crystal pulling rod increases. To ensure that the silicon liquid interface height in the crucible remains constant and achieve continuous crystal pulling, silicon material must be continuously added to the crucible, and the amount of silicon material added must also be consistent with the growth of the crystal rod. Currently, the continuous crystal pulling process generally uses a feeding bucket and a feeding tube. One end of the feeding tube is connected to the feeding bucket and the other end is connected to the crucible. A shaking device is installed in the feeding bucket. The vibration of the shaking device causes the silicon material to slide from the feeding bucket, pass through the feeding tube, and enter the crucible of the crystal pulling furnace, achieving continuous feeding. In theory, the amount of material added is related to the shaking amplitude of the shaking device. The greater the shaking amplitude, the more silicon material is added per unit time. During actual use, due to the natural accumulation of silicon material, the feeding rate cannot be maintained stable. Sometimes, when the vibration amplitude is small, smaller particles will suddenly collapse, resulting in a sudden increase in the feeding amount. The addition of a large amount of low-temperature silicon material in a short period of time will affect the thermal balance in the crucible, thereby negatively affecting the quality of crystal pulling. In addition, the current feeding scheme directly connects the crucible through the feeding tube, and there is no preheating treatment for the silicon material. The temperature at the feeding port of the feeding tube is low due to the influence of the silicon material. The evaporated silicon monoxide vapor in the crucible will solidify at the feeding port of the feeding tube to form attachments. These attachments may fall off and fall into the crucible, affecting the output of the finished crystal. It will also affect the life of the feeding tube, causing it to pulverize prematurely, seriously affecting its service life.

[0033] In view of this, the continuous crystal pulling device provided in an embodiment of the present invention includes a feeding barrel 100, a feeding pipe 200, a guide tube 300 and a crucible 400; the guide tube 300 and the feeding barrel 100 are both installed above the crucible 400, a vibrator is installed in the feeding barrel 100, and a discharge pipe 110 is provided at the bottom, and the discharge pipe 110 is installed with a solenoid valve 111, and the solenoid valve 111 is used to control the discharge area of ​​the discharge pipe 110; one end of the feeding pipe 200 is connected to the discharge pipe 110, and the other end extends into the crucible 400, and the middle section of the feeding pipe 200 is in contact with the side wall of the guide tube 300.

[0034] Specifically, the solenoid valve 111 is configured as a draw-off valve, a ball valve or a butterfly valve, and the area where the solenoid valve 111 contacts the granular silicon material is configured to be made of non-metallic material, such as plastic or ceramic, to avoid contaminating the granular silicon material; wherein, the discharge area of ​​the discharge pipe 110 refers to the cross-sectional area in the discharge pipe 110 through which the granular silicon material can flow; the larger the opening of the solenoid valve 111, the larger the discharge area of ​​the discharge pipe 110, and the more material is added per unit time; correspondingly, the smaller the opening of the solenoid valve 111, the smaller the discharge area of ​​the discharge pipe 110, and the less material is added per unit time; the presence of the solenoid valve 111 can more accurately control the addition rate of the granular silicon material.

[0035] When using this continuous crystal pulling device, the desired granular silicon material is added to the feeding barrel 100. Under the vibration of the vibrator and the action of its own gravity, the granular silicon material flows through the discharge pipe 110 at the bottom of the feeding barrel 100 into the feeding pipe 200, and then through the feeding pipe 200 into the crucible 400. The discharge pipe 110 is equipped with a solenoid valve 111. The solenoid valve 111 controls the discharge area of ​​the discharge pipe 110 to control the flow rate of the granular silicon material, thereby ensuring a uniform addition rate of the granular silicon material, thereby preventing the quality of the pulled crystal from being reduced due to changes in the feeding rate. The feeding tube 200 is fitted with the side wall of the guide tube 300, so that the granular silicon material is preheated during the feeding process, which can effectively reduce the solidification of the oxidizing gas at the discharge port of the feeding tube 200, avoid the formation of attachments that cause the feeding tube 200 to be pulverized, and extend the service life of the feeding tube 200; in addition, by effectively reducing the attachments at the discharge port of the feeding tube 200, it can be prevented that the attachments fall off and fall into the crucible 400, thereby improving the growth environment in the crystal pulling preparation, which is conducive to increasing the output of the finished crystal pulling products.

[0036] The structure and shape of the continuous crystal pulling device are described in detail below:

[0037] In an optional solution of the embodiment of the present utility model, the discharge pipe 110 is further installed with a solid flow meter 112 , and the solenoid valve 111 and the solid flow meter 112 are spaced apart and signal-connected.

[0038] The discharge pipe 110 is equipped with a solid flow meter 112 for detecting the flow of the granular silicon material at the discharge pipe 110 , thereby monitoring the flow of the granular silicon material, so that the operator can adjust and control the flow of the granular silicon material through the monitoring data.

[0039] In an optional solution of the embodiment of the present invention, along the flow direction of the granular silicon material in the discharge pipe 110 , the solid flow meter 112 is located downstream of the solenoid valve 111 .

[0040] Specifically, see Figure 1In this embodiment, the solid flowmeter 112 is located below the solenoid valve 111. The opening of the solenoid valve 111 is controlled by a computer. The larger the opening, the greater the flow rate of the granular silicon material. For example, when the solenoid valve 111 is 50% open, the flow rate of the granular silicon material is 0.1-0.3 kg / min. A solid flowmeter 112 is installed below the solenoid valve 111 to online detect the flow rate of the granular silicon material under free fall motion. The solid flowmeter 112 can detect solid particles in the range of 0.1 μm to 100 mm. The amount of granular silicon material added is measured online by the solid flowmeter 112 and fed back to the control mechanism in real time, for example, 0.1-0.3 kg / min.

[0041] The solid flow meter 112 is located below the solenoid valve 111, so that the solenoid valve 111 is used to control the flow of the granular silicon material first, and then the solid flow meter 112 is used to detect the flow, and then the opening of the solenoid valve 111 is controlled according to the detected flow.

[0042] In an optional scheme of an embodiment of the present utility model, the continuous crystal pulling device also includes a control mechanism, which is connected to the solenoid valve 111 and the solid flow meter 112 by signal; wherein: the solid flow meter 112 is used to obtain the flow signal flowing through the discharge pipe 110 per unit time and send it to the control mechanism; the control mechanism adjusts the current used to control the solenoid valve 111 according to the flow signal and sends it to the solenoid valve 111, and the solenoid valve 111 adjusts the discharge area of ​​the discharge pipe 110.

[0043] Specifically, the control mechanism includes a computer, with solenoid valve 111 electrically connected to the computer. The computer automatically controls the opening of solenoid valve 111, achieving automation of the continuous crystal pulling apparatus. A solid flowmeter 112 is electrically connected to the computer, and uses the computer to detect the flow rate of granular silicon material online, enabling real-time monitoring. Solid flowmeter 112 is used to obtain a flow rate signal through discharge pipe 110 per unit time and transmit it to the control mechanism. Based on the flow rate signal, the control mechanism adjusts the current used to control solenoid valve 111 and transmits it to solenoid valve 111, causing solenoid valve 111 to execute an action.

[0044] The control mechanism improves the automation level of the continuous crystal pulling device.

[0045] In an optional solution of the embodiment of the present invention, the feeding pipe 200 is spiral-shaped and installed on the periphery of the guide tube 300.

[0046] Specifically, the spiral shape means that the feeding tube 200 extends in a rotating shape, and the rotating path is continuously descending.

[0047] The feeding tube 200 is spiral-shaped, which increases the contact area between the feeding tube 200 and the guide tube 300, further realizing the preheating of the granular silicon material during the feeding process, and can effectively reduce the solidification of the oxidizing gas at the discharge port of the feeding tube 200, avoid the formation of attachments that cause the feeding tube 200 to be pulverized, and extend the service life of the feeding tube 200; in addition, by effectively reducing the attachments at the discharge port of the feeding tube 200, it can be prevented that the attachments fall off and fall into the crucible 400, thereby improving the growth environment in the crystal pulling preparation, which is conducive to increasing the output of the finished crystal pulling products.

[0048] In an optional solution of the embodiment of the present invention, the feeding pipe 200 is spirally arranged on the outer wall of the guide cylinder 300 .

[0049] Specifically, see Figure 1 The feeding tube 200 is spiral-shaped and spirals down from high to low. The feeding tube 200 is made of high-temperature resistant materials such as quartz, silicon nitride ceramics or silicon carbide ceramics. The length of the feeding tube 200 can be selected according to the amount of granular silicon material that needs to be preheated. When a large amount of granular silicon material needs to be preheated and a longer preheating time is required, the length of the feeding tube 200 can be increased. The increase in the length of the feeding tube 200 is mainly due to the increase in the number of rotations of the feeding tube 200. The more rotations, the longer the feeding tube 200. In this embodiment, the feed end of the feeding tube 200 is connected to the discharge pipe 110 of the feeding barrel 100. After circling the guide tube 300 one or two times, the discharge end of the feeding tube 200 is connected to the crucible 400. After the granular silicon material enters the feeding tube 200, it automatically flows downward into the crucible 400 under the action of its own weight and the angle of the feeding tube 200, and the granular silicon material is preheated during the flow process in the feeding tube 200.

[0050] The feeding tube 200 is coiled around the outer wall of the guide tube 300, and the temperature inside the guide tube 300 is used to preheat the granular silicon material; this can effectively reduce the solidification of the oxidizing gas at the discharge port of the feeding tube 200, avoid the formation of attachments that cause the feeding tube 200 to be pulverized, and extend the service life of the feeding tube 200; in addition, by effectively reducing the attachments at the discharge port of the feeding tube 200, it can prevent the attachments from falling off and falling into the crucible 400, thereby improving the growth environment during crystal pulling preparation and helping to increase the output of finished crystal pulling products.

[0051] In an optional solution of the embodiment of the present invention, the helix angle of the feeding tube 200 is set to 20-60°.

[0052] Specifically, the helix angle refers to the angle between the tangent line of the helix and the plane perpendicular to the axis of the helix, which can also be called the lead angle. The helix angle of the feeding tube 200 can be set to 20°, 30°, 40° or 60°.

[0053] The angle between the turns of the spiral feeding tube 200 can be selected experimentally based on the type of granular silicon material, such as granular silicon, crushed silicon, or powdered silicon, as well as the size and structure of the actual thermal field. This angle directly affects the flow rate of the silicon material in the feeding tube 200. If the angle is too large, the number of turns is small, the feeding rate is fast, and the preheating of the granular silicon material is insufficient. If the angle is too small, the number of turns is large, the flow rate of the granular silicon material is slow, and the feeding rate is slow.

[0054] As another embodiment, the guide tube 300 is a double-layer structure, including an inner tube and an outer tube, the outer tube is sleeved on the outside of the inner tube, and the feeding tube 200 is installed between the outer tube and the inner tube.

[0055] The feeding pipe 200 is installed in the space between the outer cylinder and the inner cylinder, saving the volume of the continuous crystal pulling device.

[0056] In an optional solution of the embodiment of the present invention, the axis of the discharge pipe 110 is arranged along the vertical direction a.

[0057] Specifically, the end of the discharge pipe 110 is clamped with the feeding pipe 200 .

[0058] The axis of the discharge pipe 110 is placed vertically, which is conducive to the outflow of the granular silicon material from the feeding barrel 100, and facilitates the granular silicon material to perform free fall movement in the discharge pipe 110 to the feeding pipe 200, and facilitates the solid flow meter 112 to detect the flow of the granular silicon material.

[0059] In an optional solution of the embodiment of the present invention, the crucible 400 includes a pot body and a graphite cover plate, the graphite cover plate is covered on the open end of the pot body, and the feeding tube 200 passes through the graphite cover plate and extends into the pot body.

[0060] Specifically, the crucible 400 is configured as a double-layered quartz crucible. In this embodiment, the feed end of the feeding tube 200 docks with the discharge tube 110 of the feeding barrel 100. After wrapping around the draft tube 300, the discharge end of the feeding tube 200 passes through the graphite cover plate above the crucible 400. After the granular silicon material enters the feeding tube 200, it automatically flows downward into the crucible 400 due to its own weight and the angle of the feeding tube 200. The granular silicon material is preheated during the flow through the feeding tube 200.

[0061] The graphite cover plate seals the pot body.

[0062] In an optional solution of the embodiment of the present invention, the cross-sectional area of ​​the guide tube 300 gradually decreases from a direction away from the crucible 400 to a direction close to the crucible 400.

[0063] Specifically, see Figure 1The horizontal cross-section of the guide tube 300 is set to be annular, and the inner diameter gradually decreases from top to bottom. When the guide tube 300 is a double-layer structure including an inner tube and an outer tube, the cross-sectional areas of the inner tube and the outer tube gradually decrease from top to bottom.

[0064] The cross-sectional area of ​​the guide tube 300 gradually decreases from top to bottom, thereby achieving a flow-guiding effect.

[0065] In an optional solution of the embodiment of the present invention, a heater 410 is installed on the outer periphery of the crucible 400 .

[0066] Specifically, heater 410 is disposed around the outer periphery of crucible 400. When using this continuous crystal pulling apparatus, the relatively low-temperature granular silicon material in the feeding tube 200 receives heat radiation from the pulled crystal ingot, as well as from the heater 410 and silicon liquid, achieving preheating. This effectively reduces oxide corrosion on the end of the feeding tube 200, extending the service life of the feeding tube 200. Furthermore, it effectively reduces deposits, improves the growth environment during crystal pulling, and contributes to increasing the output of finished crystals.

[0067] The heater 410 realizes a heating effect, thereby enabling the continuous crystal pulling device to realize a crystal pulling effect.

[0068] In an optional solution of the embodiment of the present utility model, an electronic scale is provided in the feeding barrel 100 .

[0069] Specifically, the granular silicon material added to the feeding bucket 100 is configured as one or more of granular silicon, crushed silicon, silicon powder, etc. The weight of the feeding bucket 100 is measured in real time by an electronic scale to monitor the weight of the granular silicon material in real time.

[0070] When adding materials, the vibrator and electronic scale in the adding barrel 100 are used to preliminarily control the addition of granular silicon material and weigh the added amount.

[0071] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the above embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A continuous crystal pulling device, comprising: A feeding barrel (100), a feeding pipe (200), a guide tube (300) and a crucible (400); the guide tube (300) and the feeding barrel (100) are both installed above the crucible (400), characterized in that: A vibrator is installed in the feeding barrel (100), and a discharge pipe (110) is provided at the bottom. The discharge pipe (110) is installed with a solenoid valve (111), and the solenoid valve (111) is used to control the discharge area of ​​the discharge pipe (110); One end of the feeding pipe (200) is connected to the discharging pipe (110), and the other end extends into the crucible (400). The middle section of the feeding pipe (200) is in contact with the side wall of the guide tube (300).

2. The continuous crystal pulling device according to claim 1, characterized in that: The area where the solenoid valve (111) contacts the granular silicon material is formed of a non-metallic material.

3. The continuous crystal pulling device according to claim 1, characterized in that: The discharge pipe (110) is further equipped with a solid flow meter (112), and the solenoid valve (111) and the solid flow meter (112) are spaced apart and signal-connected.

4. The continuous crystal pulling device according to claim 3, characterized in that: Along the flow direction of the granular silicon material in the discharge pipe (110), the solid flow meter (112) is located downstream of the solenoid valve (111).

5. The continuous crystal pulling device according to claim 4, characterized in that: The continuous crystal pulling device further comprises a control mechanism, wherein the control mechanism is signal-connected to the solenoid valve (111) and the solid flow meter (112); wherein: The solid flow meter (112) is used to obtain a flow signal flowing through the discharge pipe (110) per unit time and send the signal to the control mechanism; The control mechanism adjusts the current used to control the solenoid valve (111) according to the flow signal and sends the current to the solenoid valve (111), and the solenoid valve (111) adjusts the discharge area of ​​the discharge pipe (110).

6. The continuous crystal pulling device according to any one of claims 1 to 5, characterized in that: The feeding tube (200) is spiral-shaped.

7. The continuous crystal pulling device according to claim 6, characterized in that: The feeding pipe (200) is coiled around the outer wall of the guide tube (300).

8. The continuous crystal pulling device according to claim 6, characterized in that: The helical angle of the feeding tube (200) is set to 20°-60°.

9. The continuous crystal pulling device according to any one of claims 1 to 5, characterized in that: The guide tube (300) is a double-layer structure, comprising an inner tube and an outer tube, wherein the outer tube is sleeved on the outside of the inner tube, and the feeding pipe (200) is installed between the outer tube and the inner tube.

10. The continuous crystal pulling device according to any one of claims 1 to 5, characterized in that: An electronic scale is provided in the feeding barrel (100).

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