In-situ water vapor growth device

Abstract

An in-situ vapor growth device comprises: a reaction chamber suitable for accommodating a wafer to be operated; the heater is suitable for carrying out thermal annealing on the wafer to be operated; the main gas inlet penetrates through the side wall of the reaction cavity; the air outlet direction of the channel air inlets is perpendicular to the surface of the wafer to be operated, in the multiple channel air inlets, part of the channel air inlets define an inner ring, the remaining channel air inlets define an outer ring, and the outer ring surrounds the inner ring. When reaction gas is introduced into the channel gas inlet of the outer ring, the reaction gas performs gas flow compensation on the edge area of the wafer to be operated; and when reaction gas is introduced into the channel gas inlet of the inner ring, the reaction gas performs gas flow compensation on the central area of the wafer to be operated. By controlling the concentration and flow of the reaction gas introduced into the channel gas inlet of the outer ring and the channel gas inlet of the inner ring, the film thickness of the edge and the center of the wafer is regulated and controlled, the uniformity of the film thickness of the wafer is improved, and meanwhile the possibility of buckling deformation of the wafer is reduced.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductors, in particular to an in-situ water vapor growth device. Background Art

[0002] In-Situ Steam Generation (ISSG) is a novel low-pressure rapid oxidation thermal annealing technology currently used primarily for the growth of ultra-thin oxide films, sacrificial oxide layers, and the preparation of oxynitride films. The advantages of ISSG include fewer defects within the oxide film, a relatively low interface state density, and high-quality oxide films. It has become an essential process in semiconductor manufacturing. With the development of the semiconductor industry, the in-situ steam growth process is gradually replacing the furnace process for the preparation of gate oxide layers for input / output (IO) devices in 28nm and below processes.

[0003] However, there are still problems with the current equipment system of the in-situ water vapor growth process. Utility Model Content

[0004] The problem solved by the utility model is how to improve the problem of poor wafer quality caused by an in-situ water vapor growth device, so as to enhance the uniformity of wafer film thickness and the flatness of wafer surface.

[0005] To solve the above problems, the utility model provides an in-situ water vapor growth device, comprising: a reaction chamber, which is suitable for accommodating wafers to be operated; a heater, which is suitable for thermal annealing the wafers to be operated; a main air inlet, which passes through the side wall of the reaction chamber; a plurality of channel air inlets, the outlet direction of the channel air inlets being perpendicular to the surface of the wafer to be operated, and among the plurality of channel air inlets, a part of the channel air inlets form an inner ring, and the remaining number of the channel air inlets form an outer ring, and the outer ring surrounds the inner ring.

[0006] Optionally, the annularly distributed channel air inlets are spaced equally apart.

[0007] Optionally, the channel air inlets formed in different ring shapes are isolated from each other.

[0008] Optionally, it further includes: an air flow dispersion plate, which is located above the wafer to be operated; and the channel air inlet passes through the air flow dispersion plate.

[0009] Optionally, the air flow dispersion plate has an air guide groove, the opening of the air guide groove faces away from the wafer to be operated, and the channel air inlet is located at the bottom of the air guide groove.

[0010] Optionally, the air guide groove is annular.

[0011] Optionally, an air inlet is provided in the side wall of the air guide groove.

[0012] Optionally, the air inlets of different air guide grooves are isolated from each other.

[0013] Optionally, a compensation air inlet is provided on the side wall of the reaction chamber, and the compensation air inlet is connected to at least one of the air inlets.

[0014] Optionally, it also includes: a first cover plate and a second cover plate, the second cover plate and the side wall enclosing the reaction chamber, the second cover plate being located on the side of the first cover plate close to the wafer to be operated; the air flow dispersion plate is located between the first cover plate and the second cover plate, the second cover plate has an opening, and the opening exposes the channel air inlet.

[0015] Optionally, the air flow dispersion plate is in contact with the first cover plate.

[0016] Optionally, the first cover plate is a quartz cover plate; and the heater is located on a side of the first cover plate away from the reaction chamber.

[0017] Optionally, it further includes: an edge ring, which is suitable for carrying the wafer to be operated; and the outlet direction of the channel air inlet is perpendicular to the plane where the edge ring is located.

[0018] Optionally, the center of the edge ring coincides with the center of the ring formed by the channel air inlet.

[0019] Optionally, the position of the rotation center of the edge ring coincides with the position of the center of the circle formed by the channel air inlet.

[0020] Optionally, it further includes: a gas outlet, wherein the gas outlet passes through the side wall of the reaction chamber.

[0021] Optionally, the diameter of the outer ring formed by the channel air inlet ranges from 110 mm to 140 mm; the diameter of the inner ring formed by the channel air inlet ranges from 10 mm to 40 mm.

[0022] Optionally, the diameter range of the channel air inlet is: 2mm to 20mm.

[0023] Optionally, the channel gas inlet is suitable for introducing a mixed gas; the mixed gas includes hydrogen and oxygen.

[0024] Optionally, the volume ratio of the mixed gas introduced into the channel gas inlet ranges from 1:9 to 1:5.

[0025] Compared with the prior art, the technical solution of the utility model has the following advantages:

[0026] In the in-situ water vapor growth device of the present invention, when the reaction gas is introduced into the outer ring channel inlet, the reaction gas flows into the reaction chamber through the outer ring channel inlet, thereby performing airflow compensation on the edge area of ​​the wafer to be operated; when the reaction gas is introduced into the inner ring channel inlet, the reaction gas flows into the reaction chamber through the inner ring channel inlet, thereby performing airflow compensation on the center area of ​​the wafer to be operated. The concentration of the gas in the reaction gas and the gas flow rate are correlated with the film thickness of the wafer. By controlling the concentration of the reaction gas introduced into the outer ring channel inlet and the inner ring channel inlet and the reaction gas flow rate, the film thickness at the edge and center of the wafer can be flexibly controlled, thereby improving the uniformity of the film thickness throughout the wafer while reducing the possibility of wafer warping and deformation, reducing wafer scrap and improving wafer quality. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 This is an in-situ steam growth device of one embodiment;

[0028] Figure 2 This is a three-dimensional diagram of the in-situ steam growth device according to an embodiment of the present invention;

[0029] Figure 3 This is an assembly diagram of the in-situ steam growth device of an embodiment of the present utility model;

[0030] Figure 4 It is a three-dimensional diagram of the air flow dispersion plate of an embodiment of the present utility model;

[0031] Figure 5 It is a schematic cross-sectional view of the in-situ water vapor growth device according to an embodiment of the present invention. DETAILED DESCRIPTION

[0032] As can be seen from the background art, there are problems with the in-situ water vapor growth device in the prior art, which seriously affects the quality of the wafer. The reasons for the problems are analyzed in conjunction with an embodiment:

[0033] Please refer to Figure 1 The in-situ water vapor growth device includes: a reaction chamber D, which is suitable for accommodating a wafer C to be operated; an air inlet A, which runs through one side of the reaction chamber D; and an exhaust port B, which runs through the other side of the reaction chamber D opposite to the air inlet A.

[0034] Under relatively low pressure conditions (5 torr to 10 torr), a mixture of hydrogen and oxygen in a certain proportion is introduced into inlet A. This mixture passes through the wafer C to be processed and the reaction chamber D, and is discharged through exhaust port B. Under the influence of pressure, the distribution of the oxygen and hydrogen mixture in reaction chamber D will undergo drastic changes, which will seriously affect the uniformity of the film thickness on the wafer C to be processed. Conventional methods optimize and stabilize the uniformity of the film thickness of the wafer by adjusting the temperature of the local area. Within 10mm of the wafer edge, a 30°C increase is required to increase the film thickness by 10 angstroms. However, adjusting the temperature often leads to poor temperature uniformity on the wafer surface (the edge temperature is 30°C higher than the center temperature), which ultimately causes the wafer to warp and deform, resulting in scrap.

[0035] In order to solve the technical problem, the utility model provides an in-situ water vapor growth device, comprising: a reaction chamber, which is suitable for accommodating wafers to be operated; a heater, which is suitable for thermal annealing the wafers to be operated; a main air inlet, which passes through the side wall of the reaction chamber; a plurality of channel air inlets, the outlet direction of the channel air inlets being perpendicular to the surface of the wafer to be operated, and among the plurality of channel air inlets, a part of the channel air inlets form an inner ring, and the remaining number of the channel air inlets form an outer ring, and the outer ring surrounds the inner ring.

[0036] In the in-situ water vapor growth device of the present invention, when the reaction gas is introduced into the outer ring channel inlet, the reaction gas flows into the reaction chamber through the outer ring channel inlet, thereby performing airflow compensation on the edge area of ​​the wafer to be operated; when the reaction gas is introduced into the inner ring channel inlet, the reaction gas flows into the reaction chamber through the inner ring channel inlet, thereby performing airflow compensation on the center area of ​​the wafer to be operated. The concentration of the gas in the reaction gas and the gas flow rate are correlated with the film thickness of the wafer. By controlling the concentration of the reaction gas introduced into the outer ring channel inlet and the inner ring channel inlet and the reaction gas flow rate, the film thickness at the edge and center of the wafer can be flexibly controlled, thereby improving the uniformity of the film thickness throughout the wafer while reducing the possibility of wafer warping and deformation, reducing wafer scrap and improving wafer quality.

[0037] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0038] Figure 2 is a three-dimensional diagram of the in-situ water vapor growth device in a state where the second cover plate, the air flow dispersion plate and the first cover plate of the in-situ water vapor growth device are attached to each other; Figure 3 is an assembly diagram of the in-situ water vapor growth device in a state where the second cover plate, the air flow dispersion plate, and the first cover plate of the in-situ water vapor growth device are separated from each other; Figure 4is a perspective view of an air flow dispersion plate in the in-situ water vapor growth device; Figure 5 yes Figure 3 A schematic diagram of the cross-sectional structure at the location of the compensation air inlet, and Figure 3 Heater not shown.

[0039] Please refer to Figure 5 The in-situ water vapor growth device includes: a reaction chamber 1, which is suitable for accommodating a wafer 2 to be operated.

[0040] Please refer to Figure 2 and Figure 3 The in-situ steam growth device includes: a main air inlet 3, the main air inlet 3 passes through the reaction chamber 1 (such as Figure 5 side wall shown).

[0041] The main gas inlet 3 is suitable for introducing reaction gas. Specifically, in some embodiments of the present invention, the introduced reaction gas is a mixed gas, which is a mixture of hydrogen and oxygen.

[0042] In other embodiments, the introduced reaction gas further includes pure gas.

[0043] Please refer to Figure 4 and Figure 5 The in-situ water vapor growth device further includes: an air flow dispersion plate 4, which is located above the wafer 2 to be operated.

[0044] The air flow dispersion plate 4 is located above the wafer to be operated 2. When the reaction gas is introduced into the reaction chamber 1 through the air flow dispersion plate 4, the reaction gas flows through the wafer to be operated 2 from above, making the film thickness of the wafer to be operated 2 more uniform.

[0045] Specifically, in some embodiments of the present invention, the material of the air flow dispersion plate 4 includes quartz. The air flow dispersion plate 4 is a transparent quartz dispersion plate. Quartz is an excellent thermal conductive material, and its thermal conductivity varies slightly with temperature. At room temperature, the thermal conductivity of quartz is 0.013W / (m·K) to 0.015W / (m·K). The reason why quartz has a high thermal conductivity is mainly related to its molecular structure. Silicon and oxygen in quartz crystals form a network structure, and the length and angle of the silicon-oxygen bond are relatively compact, so that the distance between adjacent silicon atoms is relatively short, and the energy transfer speed is relatively fast, so quartz has good thermal conductivity. In addition, quartz does not expand and contract at high temperatures, nor does it deform or melt, so it can still maintain excellent thermal conductivity at high temperatures.

[0046] Please refer to Figure 4 The air flow distribution plate 4 has an air guide groove 5, and the opening of the air guide groove 5 is facing away from the wafer 2 to be operated (such as Figure 5 shown).

[0047] For details, please refer to Figure 4 In some embodiments of the present invention, the gas guide groove 5 is annular. The purpose of the annular shape of the gas guide groove 5 is to adapt to the shape of the wafer 2 to be operated, and to be suitable for compensating the reaction gas at the edge area of ​​the wafer 2 to be operated or the center area of ​​the wafer 2 to be operated. The film thickness of the wafer 2 to be operated is correlated with the flow rate and concentration of the compensating reaction gas, so that the film thickness of the edge area of ​​the wafer 2 to be operated or the film thickness of the center area of ​​the wafer 2 to be operated can be regulated to make the film thickness at each position of the wafer 2 to be operated more uniform.

[0048] Specifically, in some embodiments of the present invention, please continue to refer to Figure 4 The air guide groove 5 includes an inner ring air guide groove 21 and an outer ring air guide groove 22. The inner ring air guide groove 21 is connected to the inner ring channel air inlet 25; the outer ring air guide groove 22 is connected to the outer ring channel air inlet 26.

[0049] Specifically, in some embodiments of the present invention, the inner ring gas guide groove 21 is suitable for compensating the reaction gas in the central area of ​​the wafer 2 to be operated; the outer ring gas guide groove 22 is suitable for compensating the reaction gas in the edge area of ​​the wafer 2 to be operated.

[0050] Please refer to Figure 4 The side wall of the air guide groove 5 has an air inlet 6. Specifically, in some embodiments of the present invention, there are two air inlets 6. The function of the air inlet 6 on the side wall of the air guide groove 5 is to: when the air is directed to the reaction chamber 1 (such as Figure 5 When the reaction gas is introduced into the gas guide groove 5 (as shown), the reaction gas flows into the gas guide groove 5 through the gas inlet 6 on the side wall of the gas guide groove 5, and finally flows into the reaction chamber 1 (as shown Figure 5 As shown), with the wafer 2 to be operated (as shown Figure 5 as shown) to react.

[0051] Specifically, in some embodiments of the present invention, please continue to refer to Figure 4 The air inlet 6 includes an inner ring air inlet 23 and an outer ring air inlet 24.

[0052] The function of the inner ring air inlet 23 is to: when the central area of ​​the wafer 2 to be operated is to compensate the reaction gas, the air flow distribution plate 4 is used to flow into the reaction chamber 1 (such as Figure 5 The reaction gas is introduced into the inner ring gas inlet 23 and flows into the inner ring gas guide groove 21, and finally flows into the reaction chamber 1 (as shown). Figure 5 As shown), with the wafer 2 to be operated (as shown Figure 5 The reaction was carried out in the central area of ​​.

[0053] The function of the outer ring air inlet 24 is to: when the edge area of ​​the wafer 2 to be processed is to compensate the reaction gas, the air flow distribution plate 4 is used to flow into the reaction chamber 1 (such as Figure 5 The reaction gas is introduced into the outer ring gas inlet 24 and flows into the outer ring gas guide groove 22, and finally flows into the reaction chamber 1 (as shown). Figure 5 As shown), with the wafer 2 to be operated (as shown Figure 5 The edge area of ​​​​the ​​surface is reacted.

[0054] Please refer to Figure 5 The side wall of the reaction chamber 1 is provided with a compensation air inlet 7, and the compensation air inlet 7 is connected to at least one of the air inlets 6 (such as Figure 4 shown) are connected.

[0055] The compensation air inlet 7 is connected to the air inlet 6. When the reaction gas is introduced into the compensation air inlet 7, the reaction gas flows to the air inlet 6 through the compensation air inlet 7, and then flows to the air guide groove 5 through the air inlet 6, and flows to the reaction chamber 1 through the air guide groove 5, and then reacts with the wafer 2 to be operated.

[0056] For details, please refer to Figure 3 In some embodiments of the present invention, the compensation air inlet 7 is connected to the air inlet 6 (such as Figure 4 shown) are connected.

[0057] Specifically, in some embodiments of the present invention, please continue to refer to Figure 4 and Figure 5 The compensating air inlet 7 includes a first compensating air inlet 27 and a second compensating air inlet 28. The first compensating air inlet 27 is adapted to be connected to the inner ring air inlet 23; the second compensating air inlet 28 is adapted to be connected to the outer ring air inlet 24.

[0058] Specifically, in some embodiments of the present invention, there are two air inlet holes 20. Figure 4 The air inlet 20 includes a first air inlet 29 and a second air inlet 30. The first compensating air inlet 27 is connected to the inner ring air inlet 2′ via the first air inlet 29 located on the side wall of the air flow dispersion plate 4; the second compensating air inlet 28 is connected to the outer ring air inlet 24 via the second air inlet 30 located on the side wall of the air flow dispersion plate 4.

[0059] For details, please refer to Figure 4In some embodiments of the present invention, the position of the air inlet 20 corresponds to the position of the air inlet 6. That is, the projection of the air inlet 20 on a surface perpendicular to the air flow dispersion plate 4 at least partially overlaps with the projection of the air inlet 6 on a surface perpendicular to the air flow dispersion plate 4. This shortens the distance between the air inlet 20 and the air inlet 6. When reactant gas is introduced into the compensation air inlet 7, the reactant gas flows through the air inlet 20 into the air inlet 6, resulting in a shorter flow path.

[0060] In other embodiments, the number of the air inlet holes may be other values.

[0061] For details, please refer to Figure 3 In some embodiments of the present invention, the flow rate of the reaction gas introduced through the compensation air inlet 7 is smaller than the flow rate of the reaction gas introduced through the main air inlet 3 .

[0062] For details, please refer to Figure 3 In some embodiments of the present invention, there are two compensating air inlets 7. Specifically, in some embodiments of the present invention, the positions of the compensating air inlets 7 correspond to the positions of the air inlet holes 20. That is, the projection of the compensating air inlet 7 on a surface perpendicular to the air flow dispersion plate 4 at least partially overlaps with the projection of the air inlet holes 20 on a surface perpendicular to the air flow dispersion plate 4. This shortens the distance between the compensating air inlet 7 and the air inlet holes 20. When reactant gas is introduced into the compensating air inlet 7, the reactant gas flows through the air inlet holes 20 into the air inlet 6, resulting in a shorter flow path.

[0063] In other embodiments, the number of the compensating air inlets may be other values.

[0064] Specifically, in some embodiments of the present invention, the diameter of the compensation air inlet 7 ranges from 10 mm to 20 mm.

[0065] Please refer to Figure 4 The in-situ water vapor growth device includes: a channel air inlet 8, the outlet direction of the channel air inlet 8 is perpendicular to the wafer 2 to be operated (such as Figure 5 shown) surface.

[0066] The outlet direction of the channel air inlet 8 is the same as that of the main air inlet 3 (such as Figure 3 As shown in FIG, the outlet direction of the channel is different, and the reaction gas can be flexibly introduced into the channel inlet 8 according to the actual situation, so as to treat the wafer 2 (such as Figure 5Reactive gas flow compensation is performed in a local area of ​​the channel (as shown). The concentration and flow rate of the reactive gas are correlated with the film thickness of the wafer. By adjusting the flow rate or concentration of the reactive gas entering the channel gas inlet 8, the film thickness of the wafer 2 to be processed is regulated. There is no need to change the temperature of each area of ​​the wafer 2 to be processed. While improving the uniformity of the wafer film thickness, wafer warping and deformation are avoided, thereby reducing wafer scrap and improving wafer quality.

[0067] Specifically, in some embodiments of the present invention, please continue to refer to Figure 4 The channel air inlets 8 include inner-ring channel air inlets 25 and outer-ring channel air inlets 26. The inner-ring channel air inlets 25 are channel air inlets that form an inner ring among the multiple channel air inlets; the outer-ring channel air inlets 26 are channel air inlets that form an outer ring among the multiple channel air inlets.

[0068] When the reaction gas is introduced into the outer ring channel inlet 26, the reaction gas flows into the reaction chamber 1 through the outer ring channel inlet 26, thereby performing airflow compensation on the edge area of ​​the wafer 2 to be processed; when the reaction gas is introduced into the inner ring channel inlet 25, the reaction gas flows into the reaction chamber 1 through the inner ring channel inlet 25, thereby performing airflow compensation on the center area of ​​the wafer 2 to be processed. The concentration of the gas in the reaction gas and the gas flow rate are correlated with the film thickness of the wafer. By controlling the concentration and flow rate of the reaction gas introduced into the outer ring channel inlet 26 and the inner ring channel inlet 25, the film thickness at the edge and center of the wafer can be flexibly controlled, thereby improving the uniformity of the film thickness across the wafer while reducing the possibility of wafer warpage, reducing wafer scrap, and improving wafer quality.

[0069] Specifically, in some embodiments of the present invention, the channel gas inlet 8 is suitable for introducing a mixed gas; the mixed gas includes hydrogen and oxygen. The volume ratio of the mixed gas introduced into the channel gas inlet 8 is in the range of 1:9 to 1:5.

[0070] For example, when the ratio of hydrogen to oxygen in the reaction gas introduced into the main gas inlet 3 is 1:5, if the film thickness at various locations on the wafer to be processed is uneven, a reaction gas with a ratio of hydrogen to oxygen of 1:9 to 1:6 can be introduced into the channel gas inlet 8. By increasing the concentration of oxygen in the reaction gas introduced into the channel gas inlet 8, the film thickness of a local area of ​​the wafer to be processed is regulated to increase, so that the film thickness at various locations on the wafer to be processed is uniform; when a reaction gas with a ratio of hydrogen to oxygen of 1:9 to 1:6 is introduced into the outer ring channel gas inlet 26, airflow compensation can be performed on the edge area of ​​the wafer to be processed to increase the film thickness at the edge area of ​​the wafer to be processed 2; when a reaction gas with a ratio of hydrogen to oxygen of 1:9 to 1:6 is introduced into the inner ring channel gas inlet 25, airflow compensation can be performed on the central area of ​​the wafer to be processed 2 to increase the film thickness at the central area of ​​the wafer to be processed 2.

[0071] The channel air inlet 8 (such as Figure 4 The gas outlet direction is perpendicular to the wafer 2 to be operated (as shown in FIG. Figure 5 The reason for the surface of the Figure 4 , the channel air inlet 8 penetrates the air flow dispersion plate 4. Specifically, in some embodiments of the present invention, the channel air inlet 8 penetrates the air flow dispersion plate 4 along the thickness direction. This allows the reaction gas introduced from the air inlet 6 of the air guide groove 5 to flow through the air guide groove 5 to each of the channel air inlets 8, and then through the channel air inlet 8 penetrating the air flow dispersion plate 4 to flow to the wafer 2 to be operated (such as Figure 5 As shown), and then with the wafer to be operated 2 (as shown Figure 5 as shown) to react.

[0072] For details, please refer to Figure 4 In some embodiments of the present invention, the in-situ steam growth device has a plurality of channel air inlets 8. Among the plurality of channel air inlets 8, at least part of the channel air inlets 8 are distributed in an annular shape.

[0073] The plurality of channel air inlets 8 , namely, at least three channel air inlets 8 .

[0074] Please refer to Figure 4 Of the multiple channel air inlets 8, a portion of the channel air inlets 8 form an inner ring, and the remaining portion of the channel air inlets 8 form an outer ring, with the outer ring surrounding the inner ring. Specifically, in some embodiments of the present invention, the number of the inner ring channel air inlets 25 is 14, and the number of the outer ring channel air inlets 26 is 11. In other embodiments, the number of the inner ring channel air inlets and the number of the outer ring channel air inlets can also be other values.

[0075] For details, please refer to Figure 4In some embodiments of the present invention, the spacing between the annularly distributed channel air inlets 8 is equal. The spacing between the annularly distributed channel air inlets 8 is equal, that is, the spacing between adjacent inner-ring channel air inlets 25 is equal and the spacing between adjacent outer-ring channel air inlets 26 is equal, so that the air flow through the air flow distribution plate 4 to the reaction chamber 1 (such as Figure 5 When the reaction gas is introduced into the reaction chamber 1, the distribution of the reaction gas is more uniform. When the reaction gas enters the reaction chamber 1 and interacts with the wafer 2 to be operated (as shown in FIG. Figure 5 As shown in the figure), the uniformity of film formation on the surface of the wafer 2 to be operated is improved.

[0076] The channel air inlets 8 formed in different annular shapes are isolated from each other. Figure 4 In some embodiments of the present invention, the inner ring channel gas inlet 25 and the outer ring channel gas inlet 26 are isolated from each other. Thus, the inner ring channel gas inlet 25 and the outer ring channel gas inlet 26 can be respectively fed with reactive gas to process the wafer 2 (such as Figure 5 As shown in the central area of ​​), the wafer to be operated 2 (as shown in the central area of ​​) Figure 5 The edge area of ​​the wafer 2 to be operated is compensated for by reactive airflow, thereby regulating the film thickness in the central area of ​​the wafer 2 to be operated and the film thickness in the edge area of ​​the wafer 2 to be operated, so that the film thickness in each area of ​​the wafer 2 to be operated is more uniform.

[0077] Specifically, in some embodiments of the present invention, please refer to Figure 4 The diameter range of the channel air inlet 8 is: 2mm~20mm.

[0078] Specifically, in some embodiments of the present invention, please refer to Figure 4 The channel air inlet 8 is located at the bottom of the air guide groove 5.

[0079] The function of the air guide groove 5 is to: Figure 5 When the reaction gas is introduced into the channel gas inlet 8, the channel gas inlet 8 is located at the bottom of the gas guide groove 5, and the reaction gas flows through the gas guide groove 5 to the channel gas inlet 8, and then flows through the channel gas inlet 8 to the reaction chamber 1, and then the reaction gas and the wafer to be operated 2 (as shown in FIG. Figure 5 As shown) in the reaction chamber 1 (as Figure 5 The reaction was carried out in (as shown).

[0080] Specifically, in some embodiments of the present invention, please refer to Figure 4, and also includes: the air inlets 6 of different air guide grooves 5 are isolated from each other. The different air guide grooves 5 include: an inner ring air guide groove 21 and an outer ring air guide groove 22. The inner ring air guide groove 21 is: the air guide groove where the channel air inlet 8 is located when the channel air inlet 8 forms an inner ring; the outer ring air guide groove 22 is: the air guide groove where the channel air inlet 8 is located when the channel air inlet 8 forms an outer ring. The air inlets 6 of different air guide grooves 5 are isolated from each other, that is, the air inlet 23 of the inner ring air guide groove 21 and the air inlet 24 of the outer ring air guide groove 22 are disconnected from each other, and reactive gas can be introduced into the inner ring or outer ring air guide groove respectively to achieve airflow compensation for different areas of the wafer 2 to be operated.

[0081] Specifically, in some embodiments of the present invention, the diameter of the outer ring formed by the channel air inlet 8 ranges from 110 mm to 140 mm; the diameter of the inner ring formed by the channel air inlet 8 ranges from 10 mm to 40 mm.

[0082] The diameter range of the outer ring surrounded by the channel air inlet 8 is 110mm~140mm, that is, the diameter range of the outer ring air guide groove 22 is 110mm~140mm; the diameter range of the inner ring surrounded by the channel air inlet 8 is 10mm~40mm, that is, the diameter range of the inner ring air guide groove 21 is 10mm~40mm.

[0083] Please refer to Figure 3 and Figure 5 The in-situ water vapor growth device further includes: a first cover plate 9.

[0084] The first cover plate 9 is a quartz cover plate. Quartz is an excellent thermal conductive material, and its thermal conductivity varies slightly with temperature. At room temperature, the thermal conductivity of quartz is 0.013W / (m·K) to 0.015W / (m·K). The reason for the high thermal conductivity of quartz is mainly related to its molecular structure. Silicon and oxygen in quartz crystals form a network structure. The length and angle of the silicon-oxygen bond are relatively compact, which makes the distance between adjacent silicon atoms relatively short and the energy transfer speed relatively fast. Therefore, the thermal conductivity of quartz is good. In addition, quartz does not expand or contract at high temperatures, nor does it deform or melt, so it can still maintain excellent thermal conductivity at high temperatures.

[0085] Please refer to Figure 5 The in-situ water vapor growth apparatus further includes a heater 10, wherein the heater 10 is adapted to perform thermal annealing on the wafer 2. Specifically, in some embodiments of the present invention, the in-situ water vapor growth apparatus is adapted to perform rapid oxidation thermal annealing on the wafer 2 to achieve ultra-thin oxide film growth, formation of a sacrificial oxide layer, and formation of an oxynitride film.

[0086] Specifically, in some embodiments of the present invention, the heater 10 is located on a side of the first cover plate 9 away from the reaction chamber 1. The heater 10 includes a bulb 11. Specifically, in some embodiments of the present invention, the number of bulbs 11 ranges from 100 to 450. The power of the bulb 11 ranges from 500W to 800W.

[0087] The first cover plate 9 is used to separate the heater 10 from the reaction chamber 1. The quartz cover plate has good thermal conductivity, which facilitates the heater 10 to heat the wafer 2 to be processed. Specifically, in some embodiments of the present invention, the edge of the first cover plate 9 is a metal frame. The first cover plate 9 is used to assemble with the second cover plate 12 and prevent light from leaking out of the heater 10.

[0088] Specifically, in some embodiments of the present invention, please refer to Figure 3 and Figure 5 , the air flow dispersion plate 4 is in contact with the first cover plate 9 .

[0089] Please refer to Figure 3 The in-situ steam growth device further includes: a second cover plate 12, the second cover plate 12 and the air guide groove 5 (such as Figure 4 The side walls of the reaction chamber 1 (as shown) are surrounded by Figure 5 shown).

[0090] Specifically, in some embodiments of the present invention, the second cover plate 12 is rectangular. In other embodiments, the second cover plate is spherical. Specifically, in some embodiments of the present invention, the main air inlet 3 also penetrates the side wall of the second cover plate 12.

[0091] Please refer to Figure 3 Specifically, the second cover plate 12 is located near the first cover plate 9 and the wafer 2 to be operated (eg Figure 5 side as shown).

[0092] Specifically, in some embodiments of the present invention, please refer to Figure 3 The air flow dispersion plate 4 is located between the first cover plate 9 and the second cover plate 12 . The second cover plate 12 has an opening, and the opening exposes the channel air inlet 8 .

[0093] Please refer to Figure 3 Specifically, in some embodiments of the present invention, the compensation air inlet 7 also penetrates the side wall of the second cover plate 12. When the reaction gas is introduced into the compensation air inlet 7 on the side wall of the second cover plate 12, the reaction gas can flow to the air inlet 6 (such as Figure 4 As shown), and then flows through the air inlet 6 to the air guide groove 5 (as shown Figure 4 As shown), it flows through the gas guide groove 5 to the reaction chamber 1 (as shown Figure 5 As shown), and then with the wafer to be operated 2 (as shown Figure 5 as shown) to react.

[0094] Specifically, in some embodiments of the present invention, please refer to Figure 3 , the air flow dispersion plate 4 is embedded in the second cover plate 12 so that the air inlet 6 (such as Figure 4 As shown) is connected to the compensation air inlet 7 on the side wall of the second cover plate 12.

[0095] In other embodiments, the compensating air inlet penetrates a side wall of the air flow dispersion plate. When a reaction gas is introduced into the compensating air inlet on the side wall of the air flow dispersion plate, the reaction gas can flow through the compensating air inlet to the air inlet, then through the air inlet to the air guide groove, and then through the air guide groove to the reaction chamber, thereby reacting with the wafer to be processed.

[0096] Please refer to Figure 5 The in-situ water vapor growth device further includes: an edge ring 13, and the edge ring 13 is suitable for carrying the wafer 2 to be operated.

[0097] Specifically, the channel air inlet 8 (such as Figure 4 The outlet direction of the channel air inlet 8 is perpendicular to the plane where the edge ring 13 is located, that is, the outlet direction of the channel air inlet 8 is perpendicular to the surface of the wafer 2 to be operated.

[0098] The position of the center of the edge ring 13 is the same as that of the channel air inlet 8 (such as Figure 4 That is, the position of the center of the edge ring 13 coincides with the position of the center of the inner ring surrounded by the channel air inlet 8, and the position of the center of the edge ring 13 coincides with the position of the center of the outer ring surrounded by the channel air inlet 8.

[0099] Specifically, in some embodiments of the present invention, the position of the rotation center of the edge ring 13 is aligned with the channel air inlet 8 (eg Figure 4 The position of the rotation center of the edge ring 13 coincides with the position of the center of the circle formed by the channel air inlet 8. When the wafer 2 to be processed rotates 360 degrees driven by the edge ring 13, the film thickness at all locations on the surface of the wafer 2 to be processed becomes more uniform.

[0100] Specifically, in some embodiments of the present invention, the material of the edge ring 13 includes silicon carbide.

[0101] Please refer to Figure 5The in-situ water vapor growth device further includes a rotating supporter. The rotating supporter is suitable for driving the wafer 2 to rotate 360 ​​degrees to make the film thickness of the wafer 2 to be operated more uniform.

[0102] The rotary support includes: a support ring 14 for fixing the edge ring 13; metal fingers 15 for fixing the support ring 14; and clamping pins 16 connecting the metal fingers 15 and the support ring 14. The metal fingers 15 fix the support ring 14 through the clamping pins 16.

[0103] The support ring 14 is made of silicon carbide with a silicon oxide film coated on its surface.

[0104] Please refer to Figure 5 The rotary support further includes: a stator 17 and a rotor 18 , the metal fingers 15 are fixed on the rotor 18 , and the stator 17 drives the metal fingers 15 to rotate through the rotor 18 .

[0105] Specifically, in some embodiments of the present invention, the stator 17 is a magnetic suspension stator, and the magnetic suspension stator 17 drives the wafer 2 to be operated to rotate.

[0106] Specifically, in some embodiments of the present invention, 4 to 6 gold fingers are evenly distributed on the rotor 18 .

[0107] Please refer to Figure 5 The in-situ water vapor growth device further includes: a reflection plate 19 , which is located on a side of the wafer 2 to be operated away from the heater 10 .

[0108] The reflective plate 11 is used to reflect the heat passing through the wafer 2 to be processed, so as to heat the wafer 2 to be processed more effectively.

[0109] The in-situ water vapor growth device further includes: a gas outlet, which passes through the side wall of the reaction chamber 1.

[0110] The in-situ steam growth device further includes a dry pump and a butterfly valve. The dry pump and butterfly valve are adapted to remove reaction exhaust gas from the outlet and control the pressure of the reaction chamber 1. Specifically, in some embodiments of the present invention, the pressure of the reaction chamber 1 is controlled between 4 Torr and 20 Torr.

[0111] Although the present invention is disclosed as above, it is not limited thereto. Any person skilled in the art may make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be subject to the scope defined by the claims.

Claims

1. An in-situ steam growth device, characterized in that: include: A reaction chamber, wherein the reaction chamber is suitable for accommodating wafers to be operated; a heater, wherein the heater is suitable for thermally annealing the wafer to be processed; a main air inlet, the main air inlet penetrating the side wall of the reaction chamber; There are multiple channel air inlets, the outlet direction of the channel air inlets is perpendicular to the surface of the wafer to be operated, and among the multiple channel air inlets, a part of the channel air inlets form an inner ring, and the remaining number of the channel air inlets form an outer ring, and the outer ring surrounds the inner ring.

2. The in-situ steam growth device according to claim 1, characterized in that: The air inlets of the annularly distributed channel are spaced at equal intervals.

3. The in-situ steam growth device according to claim 1, characterized in that: The channel air inlets formed in different ring shapes are isolated from each other.

4. The in-situ steam growth device according to claim 1, characterized in that Also includes: an air flow dispersing plate, the air flow dispersing plate being located above the wafer to be operated; The channel air inlet passes through the air flow dispersion plate.

5. The in-situ steam growth device according to claim 4, characterized in that: The air flow dispersing plate has an air guide groove, the opening of the air guide groove faces away from the wafer to be operated, and the channel air inlet is located at the bottom of the air guide groove.

6. The in-situ steam growth device according to claim 5, characterized in that: The air guide groove is annular.

7. The in-situ steam growth device according to claim 5, characterized in that: An air inlet is provided in the side wall of the air guide groove.

8. The in-situ steam growth device according to claim 7, characterized in that: The air inlets of different air guide grooves are isolated from each other.

9. The in-situ steam growth device according to claim 7, characterized in that: A compensation air inlet is provided on the side wall of the reaction chamber, and the compensation air inlet is connected to at least one of the air inlets.

10. The in-situ steam growth device according to claim 7, characterized in that: Also includes: a first cover plate and a second cover plate, wherein the second cover plate and the side wall enclose the reaction chamber, and the second cover plate is located on a side of the first cover plate close to the wafer to be operated; The air flow dispersion plate is located between the first cover plate and the second cover plate. The second cover plate has an opening, and the opening exposes the channel air inlet.

11. The in-situ steam growth device according to claim 10, characterized in that: The air flow dispersion plate is in contact with the first cover plate.

12. The in-situ steam growth device according to claim 10, characterized in that: The first cover plate is a quartz cover plate; The heater is located on a side of the first cover plate away from the reaction chamber.

13. The in-situ steam growth device according to claim 1, wherein: Also includes: an edge ring, the edge ring being suitable for carrying the wafer to be operated; The gas outlet direction of the channel gas inlet is perpendicular to the plane where the edge ring is located.

14. The in-situ steam growth device according to claim 13, wherein: The center of the edge ring coincides with the center of the ring formed by the channel air inlet.

15. The in-situ steam growth device according to claim 13, wherein: The position of the rotation center of the edge ring coincides with the position of the center of the circle formed by the channel air inlet.

16. The in-situ steam growth device according to claim 1, wherein: Also includes: An air outlet is provided, wherein the air outlet passes through a side wall of the reaction chamber.

17. The in-situ steam growth device according to claim 1, wherein: The diameter of the outer ring formed by the channel air inlet is in the range of 110 mm to 140 mm; the diameter of the inner ring formed by the channel air inlet is in the range of 10 mm to 40 mm.

18. The in-situ steam growth device according to claim 1, wherein: The diameter of the channel air inlet ranges from 2 mm to 20 mm.

19. The in-situ steam growth device according to claim 1, wherein: The channel gas inlet is suitable for introducing a mixed gas; the mixed gas includes hydrogen and oxygen.

20. The in-situ steam growth device according to claim 19, wherein: The volume ratio of the mixed gas introduced into the channel gas inlet is in the range of 1:9 to 1:5.

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