Wafer surface temperature measuring device and wafer processing equipment

Abstract

The utility model relates to the technical field of semiconductor wafer level technology, in particular to a wafer surface temperature measuring device and wafer processing equipment. The wafer surface temperature measuring device comprises a supporting seat, a chuck and a non-contact temperature sensor. The chuck and the non-contact temperature sensor are both installed on the supporting base, the portion, opposite to the non-contact temperature sensor, of the chuck is of a high-temperature-resistant transparent structure, the front face of the chuck is used for adsorbing a wafer, and a probe of the non-contact temperature sensor is opposite to the back face of the chuck. The wafer processing equipment comprises the wafer surface temperature measuring device. According to the wafer surface temperature measuring device and the wafer processing equipment provided by the utility model, the accuracy and precision of temperature monitoring on the shielding surface of the wafer can be effectively improved, the temperature change in the wafer processing process can be accurately detected, and the temperature peak value cannot be missed; in addition, the non-contact temperature sensor is adopted to detect the temperature of the wafer, the wafer does not need to be contacted, and the risk of wafer fragmentation can be effectively reduced.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor wafer-level processes, and in particular to a wafer surface temperature measuring device and wafer processing equipment. Background Art

[0002] During the laser annealing process, the temperature generated in the laser irradiated area can reach a peak within nanoseconds or milliseconds and then decay rapidly. Since the temperature change process is too fast, temperature measuring papers, thermocouples, etc. cannot capture most areas of the temperature change process due to their low detection sensitivity. Generally, they can only detect the residual temperature after decay. In addition, temperature measuring papers can only sense and maintain the highest temperature they sense, which has no practical significance and cannot record the process.

[0003] When using temperature test strips attached to the wafer surface, due to their inherent thickness, the wafer can be locally bulged during adsorption and fixation, resulting in severe surface deformation and overhanging areas. Laser scanning over these areas can cause the wafer to break. When using thermocouples to measure the wafer surface, the thermocouples must contact the wafer surface, ensuring that the contact surface of the wafer carrier chuck is flush with the thermocouple detection surface. This creates difficulties during device manufacturing and assembly. If this contact surface cannot be achieved, the thinned wafer may still break during processing.

[0004] In addition, temperature monitoring of obscured surfaces cannot be achieved using traditional handheld devices and instruments. Utility Model Content

[0005] The purpose of the present invention is to provide a wafer surface temperature measurement device and wafer processing equipment to alleviate the technical problems in the prior art of the temperature measurement method of the shielded surface of the wafer that cannot record the process temperature and easily causes the wafer to break.

[0006] The utility model provides a wafer surface temperature measuring device, which comprises a supporting seat, a chuck and a non-contact temperature sensor.

[0007] The chuck and the non-contact temperature sensor are both installed on the support seat. The part of the chuck opposite to the non-contact temperature sensor is a high-temperature resistant transparent structure. The front of the chuck is used to adsorb the wafer, and the probe of the non-contact temperature sensor is opposite to the back of the chuck.

[0008] Preferably, as an implementable embodiment, an air channel is provided inside the chuck, and a front surface of the chuck has a groove or air hole communicating with the air channel, and the air channel is used to communicate with a vacuum supply device.

[0009] Preferably, as an implementable embodiment, the groove has a plurality of annular grooves and a plurality of linear grooves, the plurality of annular grooves are spaced apart from the inside to the outside, and the linear grooves are connected between the annular grooves.

[0010] Preferably, as an implementable embodiment, the air holes are densely distributed on the front surface of the chuck.

[0011] Preferably, as an implementable embodiment, the support base has a receiving cavity, and the non-contact temperature sensor is installed in the receiving cavity.

[0012] Preferably, as an implementable embodiment, the accommodating cavity passes through the supporting seat, and the non-contact temperature sensor is installed in the accommodating cavity through a supporting frame.

[0013] Preferably, as an implementable embodiment, the material of the high temperature resistant transparent structure is transparent ceramic, transparent glass or transparent quartz.

[0014] Preferably, as an implementable embodiment, the number of the non-contact temperature sensors is one, two or more.

[0015] Preferably, as an implementable embodiment, the non-contact temperature sensor is a wide-field non-contact temperature sensor.

[0016] The utility model also provides a wafer processing device, which comprises the above-mentioned wafer surface temperature measuring device.

[0017] Compared with the prior art, the beneficial effects of the present invention are:

[0018] The wafer surface temperature measurement device provided by the utility model can be used to monitor the temperature of the shielded surface of the wafer (in the laser annealing process, the shielded surface of the wafer is the non-annealing surface of the wafer) during processes such as laser annealing, laser cutting, and laser marking.

[0019] During use, the wafer can be placed on the front side of the chuck, and the chuck can be used to adsorb the wafer, so that the wafer is not easily displaced or separated from the chuck, thereby realizing the positioning of the wafer by the chuck, which is particularly suitable for the working condition where the wafer surface temperature measuring device moves; after the wafer is positioned, the laser is irradiated on the exposed surface of the wafer facing away from the chuck (in the laser annealing process, the exposed surface of the wafer is the annealing surface of the wafer) to heat the wafer; the heat generated by the laser on the exposed surface of the wafer will gradually be transferred to the shielded surface of the wafer facing away from the exposed surface through area A of the wafer, causing the shielded surface of the wafer to heat up. Because the part of the chuck opposite to the non-contact temperature sensor is a high-temperature resistant transparent structure, the detection light of a specific wavelength emitted by the non-contact temperature sensor can pass through the chuck and hit the shielded surface of the wafer. The detection light of a specific wavelength reflected back by the shielded surface of the wafer can be received by the non-contact temperature sensor after passing through the chuck. Therefore, the non-contact temperature sensor can monitor the heat changes of the shielded surface of the wafer during the sampling period based on the changes in the received detection light, and can accurately obtain the temperature changes of the shielded surface of the wafer during the entire laser processing process without missing the heat peak.

[0020] It should be noted that since the non-contact temperature sensors of the chuck are all installed on the support base, the relative position of the non-contact temperature sensor and the wafer can be determined, thereby determining the part of the wafer corresponding to the temperature detected by the non-contact temperature sensor. Accordingly, the non-contact temperature sensor can accurately detect the temperature of a predetermined specific part on the wafer.

[0021] Therefore, the wafer surface temperature measurement device provided by the present invention can effectively improve the accuracy and precision of temperature monitoring on the shielded surface of the wafer, and can accurately detect temperature changes during wafer processing without missing temperature peaks; in addition, a non-contact temperature sensor is used to detect the temperature of the wafer without contacting the wafer, which can effectively reduce the risk of wafer breakage.

[0022] The wafer processing equipment provided by the present invention includes the above-mentioned wafer surface temperature measuring device, and thus has all the advantages of the above-mentioned wafer surface temperature measuring device, which will not be described in detail here. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are merely embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the provided drawings without paying any creative work.

[0024] Figure 1A schematic diagram of an exploded structure of a wafer surface temperature measurement device provided by an embodiment of the present invention;

[0025] Figure 2 A schematic cross-sectional view of the wafer surface temperature measuring device provided by an embodiment of the present invention during wafer placement;

[0026] Figure 3 A schematic cross-sectional view of the wafer surface temperature measurement device during processing provided by an embodiment of the present invention;

[0027] Figure 4 A schematic structural diagram of a chuck in a wafer surface temperature measurement device provided by an embodiment of the present invention;

[0028] Figure 5 A schematic structural diagram of another chuck in the wafer surface temperature measurement device provided by an embodiment of the present invention.

[0029] Description of reference numerals:

[0030] 100-support base; 110-accommodation cavity;

[0031] 200-chuck; 210-groove; 211-annular groove; 212-linear groove; 220-air hole;

[0032] 300- non-contact temperature sensor; 310- light detection;

[0033] 400-wafer; 410-shielded surface;

[0034] 500-support frame;

[0035] 600-Laser. DETAILED DESCRIPTION

[0036] The following is a clear and complete description of the technical solution of the present invention in conjunction with the accompanying drawings. Obviously, the embodiments described are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making any creative efforts are within the scope of protection of the present invention.

[0037] The present invention will be further described in detail below through specific implementation examples and in conjunction with the accompanying drawings.

[0038] See also Figure 1-Figure 3This embodiment provides a wafer surface temperature measuring device, which includes a support base 100, a chuck 200 and a non-contact temperature sensor 300; the chuck 200 and the non-contact temperature sensor 300 are both installed on the support base 100, and the part of the chuck 200 opposite to the non-contact temperature sensor 300 is a high-temperature resistant transparent structure. The front side of the chuck 200 is used to adsorb the wafer 400, and the probe of the non-contact temperature sensor 300 is opposite to the back side of the chuck 200.

[0039] The wafer surface temperature measurement device provided in this embodiment can be used to monitor the temperature of the shielded surface of the wafer 400 (in the laser annealing process, the shielded surface of the wafer 400 is the non-annealing surface of the wafer) during processes such as laser annealing, laser cutting, and laser marking.

[0040] During use, the wafer 400 can be placed on the front of the chuck 200, and the chuck 200 can be used to adsorb the wafer 400, so that the wafer 400 is not easily offset or separated from the chuck 200, thereby realizing the positioning of the wafer 400 by the chuck 200, which is particularly suitable for the working condition where the wafer surface temperature measuring device moves; after completing the positioning of the wafer 400, the laser 600 is used to irradiate the exposed surface of the wafer 400 facing away from the chuck 200 (in the laser annealing process, the exposed surface of the wafer 400 is the annealing surface of the wafer 400) to heat the wafer 400; the heat generated by the laser 600 on the exposed surface of the wafer will gradually be transferred to the shielded surface 410 of the wafer 400 facing away from the exposed surface through area A of the wafer, so that the shielded surface 410 of the wafer 400 is heated. Because the portion of the chuck 200 opposite to the non-contact temperature sensor 300 is a high-temperature resistant transparent structure, the detection light 310 of a specific wavelength emitted by the non-contact temperature sensor 300 can pass through the chuck 200 and hit the shielded surface 410 of the wafer 400. The detection light 310 of a specific wavelength reflected back by the shielded surface 410 of the wafer 400 can be received by the non-contact temperature sensor 300 after passing through the chuck 200. Therefore, the non-contact temperature sensor 300 can monitor the heat changes of the shielded surface 410 of the wafer 400 during the sampling period based on the changes in the received detection light 310, and can accurately obtain the temperature changes of the shielded surface 410 of the wafer 400 during the entire laser processing process without missing the heat peak.

[0041] It should be noted that since the non-contact temperature sensors 300 of the chuck 200 are all installed on the support base 100, the relative position of the non-contact temperature sensor 300 and the wafer 400 can be determined, thereby, the wafer portion corresponding to the temperature detected by the non-contact temperature sensor 300 can be determined. Accordingly, the non-contact temperature sensor 300 can perform accurate temperature detection on a predetermined specific portion on the wafer 400.

[0042] Therefore, the wafer surface temperature measurement device provided in this embodiment can effectively improve the accuracy and precision of temperature monitoring of the shielded surface 410 of the wafer 400, and can accurately detect temperature changes during wafer processing without missing temperature peaks; in addition, a non-contact temperature sensor 300 is used to detect the temperature of the wafer 400 without contacting the wafer 400, which can effectively reduce the risk of wafer breakage.

[0043] In fact, the chuck 200 is installed above the support base 100, with the front of the chuck 200 facing upward, the wafer 400 is placed on the upper surface of the chuck 200, and the non-contact temperature sensor 300 is located below the chuck 200, that is, the structure is arranged from top to bottom as an upper wafer 400, a middle chuck 200, and a lower non-contact temperature sensor 300.

[0044] It is possible to choose to manufacture only the portion of the chuck 200 opposite to the non-contact temperature sensor 300 with a high-temperature resistant transparent material, and to manufacture the other portions with other materials; or it is possible to choose to manufacture the entire chuck 200 with a high-temperature resistant transparent material, so that the entire chuck 200 is a high-temperature resistant transparent structure.

[0045] Preferably, see Figure 3-Figure 5 An air channel can be set inside the chuck 200, and a groove 210 or an air hole 220 communicating with the air channel can be set on the front side (upper surface) of the chuck 200. The air channel is connected to a vacuum supply device, and the vacuum supply device is used to provide a vacuum to the air channel, thereby forming a vacuum environment in the groove 210 or the air hole 220, so as to utilize negative pressure to adsorb the wafer 400, and the adsorption effect is better.

[0046] See also Figure 3 and Figure 4 When grooves 210 are set on the chuck 200, the grooves 210 may include a plurality of annular grooves 211 and a plurality of linear grooves 212. The plurality of annular grooves 211 are arranged to be spaced apart from the inside to the outside, which is equivalent to the annular grooves 211 being arranged in circles around the same center; the linear grooves 212 are connected between the annular grooves 211 to achieve communication between the plurality of annular grooves 211 and the plurality of linear grooves 212, which can improve the uniformity of vacuum distribution, make the adsorption force on various parts of the wafer 400 more balanced, and reduce the risk of deformation of the wafer 400 due to uneven adsorption force.

[0047] Furthermore, the linear grooves 212 may be arranged to extend from the innermost annular groove 211 to the outermost annular groove 211 , which is equivalent to each linear groove 212 being able to pass through each annular groove 211 .

[0048] Preferably, the shape of the annular groove 211 can be set to be a circular ring concentric with the chuck 200, the linear groove 212 can be set to coincide with the radial line of the chuck 200, and multiple linear grooves 212 can be set to be evenly arranged around the center of the chuck 200.

[0049] See also Figure 3 and Figure 5 When choosing to set air holes 220 on the chuck 200, it is preferred to set the air holes 220 to be densely distributed on the front side of the chuck 200, which can also improve the uniformity of vacuum distribution, so that the adsorption force on various parts of the wafer 400 is more balanced, reducing the risk of deformation of the wafer 400 due to uneven adsorption force.

[0050] In addition, a receiving cavity 110 can be set on the support base 100, and the non-contact temperature sensor 300 can be installed in the receiving cavity 110 of the support base 100. In this way, the support base 100 can form a certain protective effect for the non-contact temperature sensor 300, and can prevent other structures from interfering with the non-contact temperature sensor 300.

[0051] Preferably, the accommodating cavity 110 can be set as a cavity structure that passes through the support base 100, and the non-contact temperature sensor 300 can be indirectly installed in the accommodating cavity 110 of the support base 100 using the support frame 500, which is more convenient for assembly and can improve the fixing effect of the non-contact temperature sensor 300.

[0052] Specifically, the high temperature resistant transparent structure can be made of transparent ceramics, transparent glass or transparent quartz, which can ensure the heat resistance of the high temperature resistant transparent structure. The high temperature resistant transparent structure can transmit visible light and invisible light.

[0053] As an implementation method, the non-contact temperature sensor 300 can be set to one, two or more. The specific number can be selected according to the number of positions on the shielded surface 410 of the wafer 400 that need to be temperature monitored. The non-contact temperature sensor 300 corresponds one-to-one to the temperature monitoring position, and each temperature monitoring position on the shielded surface 410 of the wafer 400 can be monitored by the corresponding non-contact temperature sensor 300.

[0054] As another possible implementation method, a wide-field non-contact temperature sensor may be selected as the non-contact temperature sensor 300 to monitor the front surface temperature of the shielded surface 410 of the wafer 400 .

[0055] This embodiment also provides a wafer processing device, which includes the above-mentioned wafer surface temperature measuring device.

[0056] The wafer processing equipment provided in this embodiment has all the advantages of the above-mentioned wafer surface temperature measuring device because it has the above-mentioned wafer surface temperature measuring device. It can effectively improve the accuracy and precision of temperature monitoring of the shielded surface 410 of the wafer 400, and can accurately detect the temperature changes during the processing of the wafer 400 without missing the temperature peak. In addition, the non-contact temperature sensor 300 is used to detect the temperature of the wafer 400 without contacting the wafer 400, which can effectively reduce the risk of wafer breakage.

[0057] The wafer processing equipment provided in this embodiment may be a laser annealing device, a laser cutting device, or a laser marking device.

[0058] In summary, the embodiments of the present invention disclose a wafer surface temperature measurement device and wafer processing equipment that overcome the many technical deficiencies of conventional methods for measuring the temperature of a shielded wafer surface. The wafer surface temperature measurement device and wafer processing equipment provided by the embodiments of the present invention can effectively improve the accuracy and precision of temperature monitoring of the shielded surface 410 of the wafer 400, accurately detecting temperature changes during the processing of the wafer 400 without missing temperature peaks. Furthermore, the use of a non-contact temperature sensor 300 to detect the temperature of the wafer 400 eliminates the need for contact with the wafer 400, effectively reducing the risk of wafer breakage.

[0059] In the description of the present invention, it should be noted that the terms "upper" and "lower" etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, it cannot be understood as a limitation on the present invention.

[0060] In the description of this utility model, it should be noted that, unless otherwise specified or limited, the term "mounted" should be understood in a broad sense. For example, it can mean a fixed connection, a detachable connection, or an integral connection; it can mean a mechanical connection or an electrical connection; it can mean a direct connection or an indirect connection through an intermediate medium; it can mean internal communication between two components. For those skilled in the art, the specific meanings of the above terms in this utility model can be understood according to the specific circumstances.

[0061] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the above embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A wafer surface temperature measuring device, characterized in that: It comprises a support base (100), a chuck (200) and a non-contact temperature sensor (300); The chuck (200) and the non-contact temperature sensor (300) are both mounted on the support seat (100); the portion of the chuck (200) opposite to the non-contact temperature sensor (300) is a high-temperature resistant transparent structure; the front side of the chuck (200) is used for adsorbing the wafer (400); and the probe of the non-contact temperature sensor (300) is opposite to the back side of the chuck (200).

2. The wafer surface temperature measuring device according to claim 1, wherein: An air passage is provided inside the chuck (200), and a groove (210) or an air hole (220) communicating with the air passage is provided on the front surface of the chuck (200), and the air passage is used to communicate with a vacuum supply device.

3. The wafer surface temperature measuring device according to claim 2, wherein: The groove (210) comprises a plurality of annular grooves (211) and a plurality of linear grooves (212). The plurality of annular grooves (211) are spaced apart from each other from the inside to the outside, and the linear grooves (212) are connected between the annular grooves (211).

4. The wafer surface temperature measuring device according to claim 2, wherein: The air holes (220) are densely distributed on the front surface of the chuck (200).

5. The wafer surface temperature measuring device according to claim 1, wherein: The support seat (100) has a receiving cavity (110), and the non-contact temperature sensor (300) is installed in the receiving cavity (110).

6. The wafer surface temperature measuring device according to claim 5, characterized in that: The accommodating cavity (110) passes through the supporting seat (100), and the non-contact temperature sensor (300) is installed in the accommodating cavity (110) via a supporting frame (500).

7. The wafer surface temperature measuring device according to claim 1, wherein: The material of the high temperature resistant transparent structure is transparent ceramic, transparent glass or transparent quartz.

8. The wafer surface temperature measuring device according to any one of claims 1 to 7, characterized in that: The number of the non-contact temperature sensor (300) is one, two or more.

9. The wafer surface temperature measuring device according to any one of claims 1 to 7, characterized in that: The non-contact temperature sensor (300) is a non-contact temperature sensor with a large field of view.

10. A wafer processing device, characterized in that: The device comprises the wafer surface temperature measuring device according to any one of claims 1 to 9.

Images