Cleaning device for polished wafer

Abstract

The utility model provides a cleaning device for polished wafers, which comprises a cleaning box, a plurality of bearing vertical rollers and two horizontal rolling brushes, and the bearing vertical rollers are used for bearing and driving the wafers to rotate circumferentially. The two horizontal rolling brushes are slidably connected into the cleaning box in the vertical direction and can move up and down to be connected with the top face or the bottom face of the wafer so as to roll and brush the top face or the bottom face of the wafer, and a first nozzle and a second nozzle are arranged in the cleaning box. According to the cleaning device for the polished wafer, the bearing vertical roller is used for bearing and driving the wafer to rotate, the first nozzle is used for spraying chemical liquid to the surface of the wafer so as to corrode SiO2 on the surface of the wafer, and then the horizontal rolling brush is moved up and down to clamp the wafer from the upper side and the lower side under the action of deionized water in the second nozzle so as to clean the wafer. And the surface of the rotating wafer is washed under the action of autorotation and translation of the horizontal rolling brush, so that the surface of the wafer is thoroughly cleaned, and the cleaning quality and the cleaning efficiency of the wafer are improved.

Description

Technical Field

[0001] The utility model belongs to the technical field of wafer post-polishing cleaning device structures, and more specifically relates to a wafer post-polishing cleaning device. Background Art

[0002] Chemical Mechanical Planarization (CMP) technology can remove excess SiO2 from the wafer surface, achieving a high degree of planarization to meet subsequent processing requirements. During this process, CeO2 solution is often used as a polishing fluid. CeO2 particles are firmly adsorbed on the surface of the SiO2 wafer, primarily in the form of a Ce-O-Si chemical bond. While CMP removes SiO2 from the wafer surface, it also leaves CeO2 polishing fluid on the wafer surface, which can easily affect the subsequent wafer processing quality and processing accuracy. Therefore, the wafer needs to be cleaned after CMP to remove the polishing fluid.

[0003] Currently, wafer cleaning methods are mainly divided into two categories: physical methods and chemical methods. Physical methods include scrubbing, ultrasonic waves, and megasonic waves. Scrubbing is a widely used, low-cost, and efficient contact cleaning method, but the friction between the brush and the crystal surface can cause new surface damage. As a non-contact surface cleaning method, ultrasonic waves have been widely used due to their advantages such as convenient cleaning and high efficiency. However, as the particle size decreases, the ultrasonic cleaning effect decreases, especially for nano-scale particles below 0.2μm, which are more difficult to effectively remove, and the standing waves generated at this frequency can also damage the wafer.

[0004] Chemical cleaning methods often use chemical cleaning fluids to clean wafers. Although the oxide layer (such as SiO2) on the wafer surface can be removed, the contaminants and particles attached to the oxide layer will be dissolved in the cleaning fluid. Therefore, after subsequent cleaning with the cleaning fluid, a small amount of contaminants and particles will still remain on the wafer surface. There are problems of incomplete cleaning or the introduction of new substances, which affects the final cleaning effect of the wafer and makes it difficult to effectively remove the polishing fluid. Utility Model Content

[0005] The purpose of the utility model is to provide a wafer cleaning device after polishing, which can effectively remove the grinding liquid on the surface of the wafer and improve the cleaning quality of the wafer.

[0006] To achieve the above-mentioned purpose, the technical solution adopted by the utility model is: to provide a wafer post-polishing cleaning device, including a cleaning box, a plurality of supporting vertical rollers and two horizontal roller brushes, the supporting vertical rollers are arranged in the cleaning box along the up and down directions, and are used to support and drive the wafer to rotate circumferentially, the two horizontal roller brushes are slidably connected in the cleaning box along the up and down directions, the horizontal roller brushes can move up and down to connect with the top surface or bottom surface of the wafer to roll brush the top surface or bottom surface of the wafer, and the cleaning box is provided with a first nozzle for spraying chemical liquid onto the wafer surface and a second nozzle for spraying deionized water onto the wafer surface.

[0007] In one possible implementation, two lifting assemblies are provided in the cleaning box and are located outside the supporting vertical roller. The lifting assemblies include a lifting column and a telescopic drive member. The telescopic drive member is connected to the lifting column and has an extended end extending toward the side close to the wafer. The two ends of the horizontal roller brush are respectively and rotatably connected to the extended ends of the two telescopic drive members. The end of the horizontal roller brush is connected to the extended end through a sliding block. The sliding block is provided with a first rotating drive member for driving the horizontal roller brush to rotate.

[0008] In one possible implementation, a cleaning rod extending in the up and down directions is further provided in the cleaning box, a lower brush head for cleaning the surface of the wafer is provided at the lower end of the cleaning rod, a translation assembly for driving the cleaning rod to move horizontally is provided in the cleaning box, and a second rotating drive component for driving the cleaning rod to rotate circumferentially is also provided on the translation assembly.

[0009] In some embodiments, the translation assembly includes a mounting column, a linear module, and a translation arm. The mounting column is arranged on the outside of the supporting vertical roller in the up and down directions. The linear module is connected to the upper part of the mounting column. The translation arm is connected to the movable end of the linear module. The second rotary drive member is connected to the translation arm and is used to drive the cleaning rod to rotate circumferentially.

[0010] In a possible implementation, the first nozzle is located above the wafer, and two second nozzles are provided, and the two second nozzles are symmetrically located on the upper and lower sides of the wafer.

[0011] In one possible implementation, there are at least three supporting vertical rollers, which are spaced apart along the circumferential direction. A limiting groove for accommodating the edge of the wafer is provided on the peripheral wall of the supporting vertical roller, and the bottom wall of the limiting groove is in rolling engagement with the outer peripheral edge of the wafer.

[0012] In some embodiments, four supporting rollers are provided, and the four supporting rollers are arranged in a rectangular shape. The middle of the four supporting rollers forms a receiving space for accommodating the wafer, and at least one of the supporting rollers can move horizontally to allow the wafer to enter the receiving space.

[0013] In one possible implementation, an auxiliary chamber is also provided in the cleaning box, which is equipped with a rotating tray and several cleaning heads. The rotating tray is used to support the wafer and drive the wafer to rotate. The cleaning head is used to spray cleaning liquid, gas or deionized water onto the wafer to clean the surface of the wafer.

[0014] In some embodiments, the cleaning head includes a first cleaning head, a second cleaning head, a third cleaning head and a fourth cleaning head. The first cleaning head is used to spray SC-1 solution onto the surface of the wafer, the second cleaning head is used to spray O3 gas onto the surface of the wafer, and the third cleaning head is used to spray DHF solution onto the surface of the wafer.

[0015] In a possible implementation, a fifth cleaning head is further provided in the auxiliary chamber and is arranged toward the wafer. The fifth cleaning head is used to spray nitrogen onto the surface of the wafer to dry the wafer.

[0016] The solution shown in the embodiment of the present application is compared with the prior art. The wafer post-polishing cleaning device provided in the embodiment of the present application uses a supporting vertical roller to support and drive the wafer to rotate, and first uses a first nozzle to spray chemical liquid onto the surface of the wafer to corrode SiO2 on the surface of the wafer. Then, under the action of deionized water in the second nozzle, the horizontal roller brush is moved up and down to clamp the wafer from the upper and lower sides, and the surface of the rotating wafer is washed under the rotation and translation of the horizontal roller brush, thereby achieving thorough cleaning of the wafer surface, avoiding the residue of chemical liquid and impurities on the wafer surface, and improving the cleaning quality and cleaning efficiency of the wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the embodiments or descriptions of the prior art. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative labor.

[0018] Figure 1 A schematic diagram of the structure of a wafer post-polishing cleaning device provided in an embodiment of the present invention;

[0019] Figure 2 For the embodiment of the utility model Figure 1 Schematic diagram of the top view of the cleaning device for wafer post-polishing (cleaning box omitted);

[0020] Figure 3 For the embodiment of the utility model Figure 1 A-direction structural diagram in FIG;

[0021] Figure 4 A schematic structural diagram of another embodiment of a wafer post-polishing cleaning device provided by an embodiment of the present utility model;

[0022] Figure 5 For the embodiment of the utility model Figure 4 Schematic diagram of the B-direction structure.

[0023] Among them, the reference numerals in the figures are:

[0024] 1. Cleaning box; 11. First nozzle; 12. Second nozzle; 13. Auxiliary chamber; 14. Fifth cleaning head; 2. Supporting roller; 21. Limiting groove; 3. Horizontal roller brush; 4. Lifting assembly; 41. Lifting column; 42. Telescopic drive member; 421. Sliding block; 43. First rotary drive member; 5. Cleaning rod; 6. Translation assembly; 61. Mounting column; 62. Linear module; 63. Translation arm; 64. Second rotary drive member; 7. Rotating tray; 72. First cleaning head; 73. Second cleaning head; 74. Third cleaning head; 75. Fourth cleaning head; 8. Wafer. DETAILED DESCRIPTION

[0025] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention more clearly understood, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention.

[0026] It should be noted that when an element is referred to as being "disposed on" another element, it may be directly on the other element or indirectly on the other element. It should be understood that the terms "length", "width", "upper", "lower", "front", "back", "top", "bottom", "inside", "outside" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention. The terms "first" and "second" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, "several" means two or more, unless otherwise clearly and specifically defined.

[0027] Please also refer to Figures 1 to 5The post-polishing wafer cleaning device provided by the present invention will now be described. The post-polishing wafer cleaning device comprises a cleaning box 1, a plurality of supporting vertical rollers 2, and two horizontal roller brushes 3. The supporting vertical rollers 2 are vertically arranged within the cleaning box 1 for supporting and driving the wafer 8 in circumferential rotation. The two horizontal roller brushes 3 are vertically slidably connected within the cleaning box 1. The horizontal roller brushes 3 can move up and down until they contact the top or bottom surface of the wafer 8 to brush the top or bottom surface of the wafer 8. The cleaning box 1 is provided with a first nozzle 11 for spraying a chemical liquid onto the surface of the wafer 8, and a second nozzle 12 for spraying deionized water onto the surface of the wafer 8.

[0028] The post-polishing cleaning device for wafers provided in this embodiment is compared with the prior art. The post-polishing cleaning device for wafers provided in this embodiment uses a supporting vertical roller 2 to support and drive the wafer 8 to rotate, first uses a first nozzle 11 to spray chemical liquid onto the surface of the wafer 8 to corrode SiO2 on the surface of the wafer 8, and then, under the action of deionized water in the second nozzle 12, the horizontal roller brush 3 is moved up and down so that the horizontal roller brush 3 clamps the wafer 8 from the upper and lower sides, and the surface of the rotating wafer 8 is scrubbed under the self-rotation and translation of the horizontal roller brush 3, thereby achieving thorough cleaning of the surface of the wafer 8, avoiding the residue of chemical liquid and impurities on the surface of the wafer 8, and improving the cleaning quality and cleaning efficiency of the wafer 8.

[0029] In this embodiment, the horizontal roller brushes 3 installed in the cleaning box 1 can move up and down to facilitate the loading and cleaning of wafers 8. First, the two horizontal roller brushes 3 are positioned separately (one at a higher position and the other at a lower position to provide space for loading wafers 8). The wafer 8 is first mounted on the supporting roller 2. The first nozzle 11 is used to spray a chemical liquid onto the surface of the wafer 8 to corrode the SiO2 on the surface of the wafer 8. At this time, the two horizontal roller brushes 3 are inactive, and the supporting roller 2 drives the wafer 8 to rotate at a certain speed. The chemical liquid can directly corrode the SiO2, promoting the breaking of the Ce-O-Si chemical bond. The chemical liquid can be a DHF solution, which is formed by mixing HF and H2O with a ratio of HF:H2O = 1:100-1:200.

[0030] Then, stop spraying the first nozzle 11, turn on the second nozzle 12 to spray deionized water onto the top and bottom surfaces of the wafer 8, and at the same time move the two horizontal roller brushes 3 to the side close to the wafer 8, thereby forming a clamping effect on the upper and lower surfaces of the wafer 8. After that, the horizontal roller brush 3 and the wafer 8 rotate around their own main axes, and the horizontal roller brush 3 is used to thoroughly clean the surface and bottom surface of the wafer 8, so that the surface of the wafer 8 can be fully cleaned, which is suitable for cleaning processing of wafers 8 of various sizes.

[0031] Specifically, the rotation speed of the horizontal roller brush 3 is 800-1200 rpm; the rotation speed of the wafer 8 is 300-500 rpm; the DHF (HF:H2O=1:100-1:200) temperature is 20-25°C, the flow rate is 40-60 mL / min, and the time is 10-20 s; the DIW temperature is 20-40°C, the flow rate is 800-1200 mL / min, and the time is 60-120 s.

[0032] It should be noted that the above-mentioned device is not only suitable for cleaning SiO2 wafers 8 after chemical mechanical polishing, but can also be used for cleaning other medium wafers 8 (such as silicon nitride, aluminum oxide, low-k / high-k materials, etc.) after chemical mechanical polishing. It is also suitable for cleaning various semiconductor wafers 8 (such as gallium nitride, silicon carbide, aluminum nitride, gallium oxide, etc.) after chemical mechanical polishing.

[0033] In one possible implementation, please also refer to Figures 1 to 5 The cleaning box 1 is provided with two lifting assemblies 4 located on the outside of the supporting vertical roller 2. The lifting assembly 4 includes a lifting column 41 and a telescopic driving member 42. The telescopic driving member 42 is connected to the lifting column 41 and has an outward extending end extending toward the side close to the wafer 8. The two ends of the horizontal roller brush 3 are respectively and rotatably connected to the outward extending ends of the two telescopic driving members 42. The end of the horizontal roller brush 3 is connected to the outward extending end through a sliding block 421. The sliding block 421 is provided with a first rotating driving member 43 for driving the horizontal roller brush 3 to rotate.

[0034] In this embodiment, the lifting assembly 4 within the cleaning box 1 is used to move the horizontal roller brush 3 up and down. A lifting column 41 is arranged in the vertical direction, and two telescopic drive members 42 are provided, one near the upper and lower ends of the lifting column 41 and extending toward the wafer 8. The horizontal roller brush 3 is connected to the extended end via a sliding block 421. The telescopic drive member 42 can drive the sliding base and the horizontal roller brush 3 to rise and fall synchronously, so that the horizontal roller brush 3 fully contacts the surface of the wafer 8.

[0035] On this basis, a first rotating driving member 43 for driving the horizontal roller brush 3 to rotate is provided on the sliding block 421. The first rotating driving member 43 can adopt a driving structure such as a motor to drive the horizontal roller brush 3 to rotate to clean the surface of the wafer 8.

[0036] In one possible implementation, please also refer to Figures 1 to 5 A cleaning rod 5 extending in the up and down directions is also provided in the cleaning box 1. A lower brush head for cleaning the surface of the wafer 8 is provided at the lower end of the cleaning rod 5. A translation component 6 for driving the cleaning rod 5 to move horizontally is provided in the cleaning box 1. The translation component 6 is also provided with a second rotating drive component 64 for driving the cleaning rod 5 to rotate circumferentially.

[0037] In this embodiment, the cleaning rod 5 further cleans the surface of the wafer 8 through the brush head at the lower end, adjusts the horizontal position of the lower brush head, and combines the rotation of the lower brush head and the rotation of the wafer 8 itself to achieve deep cleaning of different positions on the top surface of the wafer 8, achieving better cleaning effect.

[0038] On this basis, the translation component 6 can also be set on the lifting arm, and the lifting arm can be used to drive the translation component 6 and the cleaning rod 5 to move up and down synchronously, so as to adjust the height of the lower brush head and achieve effective cleaning of the top surface of the wafer 8.

[0039] In some embodiments, please refer to Figures 1 to 5 The translation assembly 6 includes a mounting column 61, a linear module 62 and a translation arm 63. The mounting column 61 is arranged on the outside of the supporting vertical roller 2 along the up and down directions. The linear module 62 is connected to the upper part of the mounting column 61. The translation arm 63 is connected to the moving end of the linear module 62. The second rotary drive member 64 is connected to the translation arm 63 and is used to drive the cleaning rod 5 to rotate circumferentially.

[0040] In this embodiment, the linear module 62 is connected to the mounting column 61 and is arranged in a horizontal direction. The linear module 62 can drive the translation arm 63 and the cleaning rod 5 to move horizontally, so that the cleaning rod 5 can move horizontally, thereby achieving effective cleaning of various positions on the surface of the wafer 8, making up for the insufficient cleaning effect of the horizontal roller brush 3 on the wafer 8, and enhancing the cleaning effect on the wafer 8.

[0041] When cleaning wafer 8 using cleaning rod 5, first nozzle 11 sprays SC-1 solution onto the surface of wafer 8. The composition of SC-1 solution is NH4OH:H2O2:H2O (1:1:5-1:1:100), and the temperature is 30-80°C. Because it contains H2O2, it forms a hydrophilic oxide film on the surface of wafer 8, allowing the solution to penetrate between the surface of wafer 8 and the particles. Afterwards, the oxide film and the surface of wafer 8 are corroded by NH4OH, and the particles attached to the surface of wafer 8 fall off, thereby achieving the purpose of particle removal and ultimately removing particles from the surface of wafer 8 at high speed. The horizontal roller brush 3 and the lower brush head are both made of polyvinyl alcohol, which not only provides excellent cleaning effect but also avoids the introduction of new substances through reaction with the solution.

[0042] Specifically, the rotation speed of the lower brush head is 800-1200 rpm, the rotation speed of wafer 8 is 300-500 rpm, the composition of the SC-1 solution is NH4OH:H2O2:H2O=1:4:20, the temperature is 60-80°C, the NH4OH flow rate is 40-60 mL / min, the H2O2 flow rate is 160-240 mL / min, the H2O flow rate is 800-1200 mL / min, and the time is 60-120s.

[0043] In one possible implementation, please also refer to Figures 1 to 5 The first nozzle 11 is located above the wafer 8 , and two second nozzles 12 are provided, and the two second nozzles 12 are symmetrically located on the upper and lower sides of the wafer 8 .

[0044] In this embodiment, the first nozzle 11 mainly sprays the chemical liquid onto the top surface of the wafer 8, and the second nozzle 12 is used to spray deionized water onto the top and bottom surfaces of the wafer 8 respectively, so as to facilitate the removal of all chemical liquids, particles and other substances, and ensure the cleanliness of the wafer 8.

[0045] In one possible implementation, please also refer to Figures 1 to 5 There are at least three supporting rollers 2, and the supporting rollers 2 are arranged at intervals along the circumferential direction. A limiting groove 21 for accommodating the edge of the wafer 8 is provided on the peripheral wall of the supporting roller 2, and the bottom wall of the limiting groove 21 rolls with the outer peripheral edge of the wafer 8.

[0046] In this embodiment, at least three supporting rollers 2 are provided to effectively support and drive wafer 8 at various circumferential positions, ensuring rotation of wafer 8. Specifically, three, four, or five supporting rollers 2 may be provided, evenly distributed around the periphery of wafer 8. Retaining grooves 21 accommodate the edges of wafer 8, ensuring a rolling engagement between the outer edges of wafer 8 and the bottom walls of retaining grooves 21.

[0047] On this basis, a driving component such as a motor is provided below at least one of the supporting rollers 2 to realize the rotational drive of the supporting roller 2, thereby achieving the effect of driving the entire wafer 8 to rotate.

[0048] In some embodiments, please refer to Figures 1 to 5 There are four supporting rollers 2, which are arranged in a rectangular shape. The middle of the four supporting rollers 2 forms a accommodating space for accommodating the wafer 8, and at least one supporting roller 2 can move horizontally to allow the wafer 8 to enter the accommodating space.

[0049] In this embodiment, four supporting rollers 2 are provided. When loading the wafer 8, at least one supporting roller 2 needs to be moved out horizontally before the wafer 8 can be installed. To facilitate loading, the four supporting rollers 2 can also be moved outward horizontally to leave space for loading the wafer 8. When the wafer 8 moves to the center of the accommodating space, the four supporting rollers 2 move horizontally and closer to each other, so that the outer edge of the wafer 8 enters the limiting groove 21 and forms a rolling engagement. At this time, the loading mechanism moves out, completing the loading of the wafer 8.

[0050] In one possible implementation, please also refer to Figures 1 to 5An auxiliary chamber 13 is also provided in the cleaning box 1. The auxiliary chamber 13 is provided with a rotating tray 7 and several cleaning heads. The rotating tray 7 is used to support the wafer 8 and drive the wafer 8 to rotate. The cleaning head is used to spray cleaning liquid, gas or deionized water onto the wafer 8 to clean the surface of the wafer 8.

[0051] In this embodiment, the cleaning heads within the auxiliary chamber 13 can further clean the wafer 8. Several cleaning heads can spray different cleaning liquids, gases, or deionized water onto the surface of the wafer 8 at different time intervals, achieving multiple flushing and cleaning of the surface of the wafer 8. Finally, deionized water is used to perform a final cleansing of the wafer 8. The substances sprayed by the cleaning heads are not limited to liquids; they can also be gases, both of which can effectively clean the wafer 8. The same cleaning head can be used to supply only one substance or two substances, and the specific number is not limited.

[0052] In some embodiments, please refer to Figures 1 to 5 The cleaning heads include a first cleaning head 72, a second cleaning head 73, a third cleaning head 74 and a fourth cleaning head 75. The first cleaning head 72 is used to spray SC-1 solution onto the surface of the wafer 8, the second cleaning head 73 is used to spray O3 gas onto the surface of the wafer 8, the third cleaning head 74 is used to spray DHF solution onto the surface of the wafer 8, and the fourth cleaning head 75 is used to spray deionized water onto the surface of the wafer 8.

[0053] In this embodiment, multiple cleaning heads are used to spray a variety of different cleaning liquids, gases, or deionized water in a one-to-one manner, effectively removing particles, chemical residues, and the like from the surface of wafer 8, resulting in a more thorough cleaning effect. Wafer 8 is placed in auxiliary chamber 13. First, SC-1 solution is sprayed onto the top surface of wafer 8 using first cleaning head 72. O3 gas is then blown onto the surface of wafer 8 using second cleaning head 73. Finally, DHF solution is sprayed onto the top surface of wafer 8 using third cleaning head 74. Finally, deionized water is sprayed onto wafer 8 using fourth cleaning head 75 to rinse wafer 8, removing any residual cleaning liquid and contaminants from the surface of wafer 8. During the spraying process, wafer 8 rotates at a certain speed driven by rotating tray 7 to ensure that the cleaning liquid is evenly coated on the entire surface of wafer 8, thereby improving the cleaning effect.

[0054] Specifically, the rotation speed of wafer 8 is 300-500rpm; the composition of SC-1 solution is NH4OH:H2O2:H2O=1:4:20, the temperature is 60-80℃, the NH4OH flow rate is 40-60mL / min, the H2O2 flow rate is 160-240mL / min, the H2O flow rate is 800-1200mL / min, and the time is 60-120s; the concentration of O3 gas is 30-50ppm, the flow rate is 1000-2000mL / min, and the time is 20-60s; the composition of DHF solution is HF:H2O=1:100-1:200, the temperature is 20-25℃, the flow rate is 40-60mL / min, and the time is 10-20s; the N2 flow rate is 5-15L / min, and the time is 1-5min.

[0055] In one possible implementation, please also refer to Figures 1 to 5 A fifth cleaning head 14 is further provided in the auxiliary chamber 13 and is disposed toward the wafer 8 . The fifth cleaning head 14 is used to spray nitrogen onto the surface of the wafer 8 to dry the wafer 8 .

[0056] In this embodiment, the fifth cleaning head 14 disposed in the auxiliary chamber 13 uses nitrogen to spray the surface of the wafer 8 , thereby ultimately drying the wafer 8 to ensure that the surface of the wafer 8 is clean and free of residue.

[0057] The above-mentioned wafer post-polishing cleaning device uses a supporting vertical roller 2 to support and drive the wafer 8 to rotate, and first uses the first nozzle 11 to spray chemical liquid onto the surface of the wafer 8 to corrode SiO2 on the surface of the wafer 8. Then, under the action of deionized water in the second nozzle 12, the horizontal roller brush 3 is moved up and down to clamp the wafer 8 from the upper and lower sides, and the surface of the rotating wafer 8 is washed under the rotation and translation of the horizontal roller brush 3, thereby achieving thorough cleaning of the surface of the wafer 8, avoiding the residue of chemical liquid and impurities on the surface of the wafer 8, and improving the cleaning quality and cleaning efficiency of the wafer 8.

[0058] The above are only preferred embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent replacements and improvements made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.

Claims

1. Wafer cleaning device after polishing, characterized in that: The invention comprises a cleaning box (1), a plurality of supporting vertical rollers (2) and two horizontal roller brushes (3), wherein the supporting vertical rollers (2) are arranged in the cleaning box (1) along the vertical direction and are used to support and drive the wafer (8) to rotate circumferentially, and the two horizontal roller brushes (3) are slidably connected in the cleaning box (1) along the vertical direction, and the horizontal roller brushes (3) can move up and down to contact the top surface or bottom surface of the wafer (8) to roll the top surface or bottom surface of the wafer (8), and the cleaning box (1) is provided with a first nozzle (11) for spraying chemical liquid onto the surface of the wafer (8) and a second nozzle (12) for spraying deionized water onto the surface of the wafer (8).

2. The wafer post-polishing cleaning device according to claim 1, wherein: The cleaning box (1) is provided with two lifting assemblies (4) located outside the supporting vertical roller (2), and the lifting assembly (4) includes a lifting column (41) and a telescopic driving member (42), the telescopic driving member (42) is connected to the lifting column (41) and has an extended end extending toward the side close to the wafer (8), the two ends of the horizontal roller brush (3) are respectively connected to the extended ends of the two telescopic driving members (42) in a one-to-one rotational manner, and the end of the horizontal roller brush (3) is connected to the extended end through a sliding block (421), and the sliding block (421) is provided with a first rotating driving member (43) for driving the horizontal roller brush (3) to rotate.

3. The wafer post-polishing cleaning device according to claim 1, wherein: The cleaning box (1) is further provided with a cleaning rod (5) extending in the up-down direction, the lower end of the cleaning rod (5) is provided with a lower brush head for cleaning the surface of the wafer (8), the cleaning box (1) is provided with a translation assembly (6) for driving the cleaning rod (5) to move horizontally, and the translation assembly (6) is further provided with a second rotating drive member (64) for driving the cleaning rod (5) to rotate circumferentially.

4. The wafer post-polishing cleaning device according to claim 3, characterized in that: The translation assembly (6) includes a mounting column (61), a linear module (62) and a translation arm (63), wherein the mounting column (61) is arranged on the outer side of the supporting roller (2) in the up-down direction, the linear module (62) is connected to the upper part of the mounting column (61), the translation arm (63) is connected to the movable end of the linear module (62), and the second rotary drive member (64) is connected to the translation arm (63) and is used to drive the cleaning rod (5) to rotate circumferentially.

5. The wafer post-polishing cleaning device according to claim 1, wherein: The first nozzle (11) is located above the wafer (8), and two second nozzles (12) are provided, and the two second nozzles (12) are symmetrically located on the upper and lower sides of the wafer (8).

6. The wafer post-polishing cleaning device according to claim 1, wherein: The supporting rollers (2) are provided with at least three and are spaced apart in the circumferential direction. The peripheral wall of the supporting roller (2) is provided with a limiting groove (21) for accommodating the edge of the wafer (8), and the bottom wall of the limiting groove (21) is in rolling engagement with the outer peripheral edge of the wafer (8).

7. The wafer post-polishing cleaning device according to claim 6, wherein: There are four supporting rollers (2), which are arranged in a rectangular shape. The middle parts of the four supporting rollers (2) form a storage space for accommodating the wafer (8), and at least one of the supporting rollers (2) can move horizontally to allow the wafer (8) to enter the storage space.

8. The wafer post-polishing cleaning device according to claim 1, wherein: The cleaning box (1) is further provided with an auxiliary chamber (13), wherein a rotating tray (7) and a plurality of cleaning heads are provided in the auxiliary chamber (13), wherein the rotating tray (7) is used to support the wafer (8) and drive the wafer (8) to rotate, and the cleaning heads are used to spray cleaning liquid, gas or deionized water onto the wafer (8) to clean the surface of the wafer (8).

9. The wafer post-polishing cleaning device according to claim 8, characterized in that: The cleaning head includes a first cleaning head (72), a second cleaning head (73), a third cleaning head (74) and a fourth cleaning head (75), wherein the first cleaning head (72) is used to spray SC-1 solution onto the surface of the wafer (8), the second cleaning head (73) is used to spray O3 gas onto the surface of the wafer (8), the third cleaning head (74) is used to spray DHF solution onto the surface of the wafer (8), and the fourth cleaning head (75) is used to spray deionized water onto the surface of the wafer (8).

10. The wafer post-polishing cleaning device according to claim 9, wherein: A fifth cleaning head (14) is also provided in the auxiliary chamber (13) and is arranged toward the wafer (8). The fifth cleaning head (14) is used to spray nitrogen onto the surface of the wafer (8) to dry the wafer (8).

Images