Stable diode device
By setting a metal substrate and spirally arranged metal fins at both ends of the epoxy package of the diode device, the heat dissipation problem is solved and the long-term performance stability of the device is achieved.
Patent Information
- Application Number
- CN202422389043.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-30
- Publication Date
- 2025-09-16
- Estimated Expiration
- 2034-09-30
AI Technical Summary
Existing diode devices cannot dissipate heat in a timely manner during use, affecting the stability of device performance.
A metal substrate is set at both ends of the epoxy package of the diode device, and metal fins are spirally arranged on the back of the metal substrate and connected using a thermally conductive silicone layer to achieve rapid heat extraction and heat dissipation.
Through rapid heat dissipation, the performance stability of the diode device is guaranteed during long-term use.
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Figure CN223347770U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of semiconductor power devices, in particular to a stable diode device. Background Art
[0002] The PN junction, with its unidirectional conductivity, is a characteristic utilized by many devices in electronics. Common semiconductor devices, such as semiconductor diodes, are based on this junction. Diodes are electronic devices made from semiconductor materials. With advances in technology and the development of informatics, market demands for diodes are increasing, and the heat generated during use is also increasing. Failure to dissipate heat promptly can affect the stability of the device's overall performance. Utility Model Content
[0003] The utility model aims to provide a stable diode device, which can realize rapid conduction and heat dissipation of heat generated by the device, so as to ensure the stability of the device performance during long-term use.
[0004] To achieve the above-mentioned objectives, the present invention adopts a technical solution: a stable diode device comprising: a PN junction, an epoxy encapsulation body covering the PN junction, and leads extending outward from end surfaces of the epoxy encapsulation body. A metal substrate is disposed on each end surface of the cylindrical epoxy encapsulation body. The metal substrate has a central through-hole for the lead to pass through. Metal fins are formed on the surface of the metal substrate opposite the epoxy encapsulation body and are spirally arranged around the through-hole.
[0005] The further improved scheme in the above technical scheme is as follows:
[0006] 1. In the above solution, the metal substrate is a copper substrate or an aluminum substrate, and the metal fins are copper fins or aluminum fins.
[0007] 2. In the above solution, the metal substrate and the epoxy encapsulation are bonded together by an adhesive layer.
[0008] 3. In the above solution, the adhesive layer is a thermally conductive silicone layer.
[0009] 4. In the above solution, the metal substrate and the metal fins are an integrally formed structure.
[0010] Due to the application of the above technical solution, the present invention has the following advantages and effects compared with the prior art:
[0011] The utility model is a stable diode device. A metal substrate is provided on each end surface of the cylindrical epoxy package. A through hole is provided in the center of the metal substrate for the lead to pass through. Metal fins are formed on the surface of the metal substrate opposite to the plastic package on the side thereof. The metal fins are spirally arranged around the through hole. The metal fins can quickly conduct and dissipate the heat generated by the device, thereby ensuring the stability of the device performance during long-term use. BRIEF DESCRIPTION OF THE DRAWINGS
[0012] Attachment Figure 1 It is a three-dimensional schematic diagram of the local structure of the stable diode device of the utility model;
[0013] Attachment Figure 2 This is a front view of the structure of the stable diode device of the utility model;
[0014] Attachment Figure 3 This is a structural front view of the metal substrate in the stable diode device of the utility model.
[0015] In the above figures: 1, PN junction; 2, epoxy package; 3, lead; 4, metal substrate; 5, through hole; 6, metal fin; 7, adhesive layer. DETAILED DESCRIPTION
[0016] The present invention will be further described below with reference to the accompanying drawings and embodiments:
[0017] Example 1: A stable diode device comprises: a PN junction 1, an epoxy encapsulation body 2 covering the outside of the PN junction 1, and leads 3 extending outward from the end surfaces of the epoxy encapsulation body 2. A metal substrate 4 is provided on each end surface of the cylindrical epoxy encapsulation body 2. The metal substrate 4 has a through hole 5 in the center for the lead 3 to pass through. The metal substrate 4 has a metal fin 6 spirally arranged around the through hole 5 formed on the surface of the metal substrate 4 opposite the epoxy encapsulation body 2.
[0018] The metal substrate 4 is a copper substrate, and the metal fins 6 are copper fins;
[0019] The metal substrate 4 and the epoxy package 2 are bonded together via an adhesive layer 7 ; the adhesive layer 7 is a thermally conductive silicone layer.
[0020] Example 2: A stable diode device comprises: a PN junction 1, an epoxy encapsulation body 2 covering the outside of the PN junction 1, and leads 3 extending outward from the end surfaces of the epoxy encapsulation body 2. A metal substrate 4 is provided on each end surface of the cylindrical epoxy encapsulation body 2. The metal substrate 4 has a through hole 5 in the center for the lead 3 to pass through. The metal substrate 4 has a metal fin 6 spirally arranged around the through hole 5 formed on the surface of the metal substrate 4 opposite to the epoxy encapsulation body 2.
[0021] The metal substrate 4 is an aluminum substrate, and the metal fins 6 are aluminum fins; the metal substrate 4 and the metal fins 6 are an integrally formed structure.
[0022] When the above-mentioned stable diode device is used, it can realize the rapid extraction and heat dissipation of the heat generated by the device, so as to ensure the stability of the device performance during long-term use.
[0023] The above embodiments are intended only to illustrate the technical concepts and features of the present invention. Their purpose is to enable those familiar with the art to understand the contents of the present invention and implement them accordingly. They are not intended to limit the scope of protection of the present invention. Any equivalent changes or modifications based on the spirit of the present invention are intended to be included in the scope of protection of the present invention.
Claims
1. A stable diode device, comprising: A PN junction (1), an epoxy encapsulation body (2) covering the outside of the PN junction (1), and leads (3) extending outward from the end surfaces of both ends of the epoxy encapsulation body (2), characterized in that: a metal substrate (4) is provided on each end surface of the cylindrical epoxy encapsulation body (2), a through hole (5) is provided in the center of the metal substrate (4) for the lead (3) to pass through, and a metal fin (6) arranged spirally around the through hole (5) is formed on the surface of the metal substrate (4) on the side opposite to the epoxy encapsulation body (2).
2. The stabilized diode device according to claim 1, wherein: The metal substrate (4) is a copper substrate or an aluminum substrate, and the metal fins (6) are copper fins or aluminum fins.
3. The stable diode device according to claim 1, wherein: The metal substrate (4) and the epoxy package (2) are bonded together via an adhesive layer (7).
4. The stable diode device according to claim 3, wherein: The adhesive layer (7) is a thermally conductive silicone layer.
5. The stable diode device according to claim 1, wherein: The metal base plate (4) and the metal fins (6) are an integrally formed structure.