Alumina insulating film based on magnetron sputtering deposition method

Abstract

The utility model provides an aluminum oxide insulating film based on a magnetron sputtering deposition method, the aluminum oxide insulating film comprises a mirror surface stainless steel substrate and an insulating film, the insulating film comprises a plasma layer, a gas action layer, a sputtering layer and a target material layer, the outer end of the mirror surface stainless steel substrate is provided with a protection layer, the outer end of the protection layer is adhered to the plasma layer, and the gas action layer is arranged on the plasma layer. The gas action layer and the sputtering layer are mixed to act on the outer side of the plasma layer, a hollow layer is arranged between the outer ends of the gas action layer and the sputtering layer and the target material layer, the protective layer is a dust-free sterile film layer, the plasma layer is formed by mixed deposition of argon and oxygen in a high vacuum state, the distance between the target material layer and the mirror surface stainless steel substrate ranges from 50 mm to 100 mm, and the distance between the target material layer and the mirror surface stainless steel substrate ranges from 50 mm to 100 mm. The sputtering power density of the sputtering layer is 0.015 W / mm < 2 > to 0.030 W / mm < 2 >, and the sputtering time of the sputtering layer is 2 to 6 hours. The thin film sensor solves the problems that in the design of the thin film sensor, the thin film adhesive force is weak, and the insulating property is prone to failure and short circuit in the use process.

Description

Technical Field

[0001] The utility model relates to the technical field of thin film sensors, in particular to an aluminum oxide insulating film based on a magnetron sputtering deposition method. Background Art

[0002] With the continuous development of precision processing and manufacturing technology, thin-film sensors are required to possess characteristics such as miniaturization, high sensitivity, high resolution, and high temperature resistance, capable of operating normally in harsh environments. The thin-film sensor core is composed of multiple layers of composite thin films. The first layer is an insulating film that acts as an isolation layer on the metal substrate; the second layer is a metal-sensitive film that acts as a strain gauge; the third layer is a passivation protective dielectric film, which is mainly used to protect the strain resistor and isolate air and moisture, preventing oxidation and corrosion of the strain resistor film, which may cause instability in the strain resistor; the fourth layer is a window electrode film for gold wire leads, which contacts the strain resistor film to achieve electrical lead-out. Therefore, preparing a sensor substrate insulating film with high surface quality, good insulation, and strong damage resistance is one of the key technologies to achieve excellent performance of thin-film sensors.

[0003] Compared to other functional dielectric films, insulating films have a higher dielectric constant, higher thermal conductivity, higher mechanical strength, stronger corrosion resistance, and better chemical inertness. They are very important functional thin film materials and are particularly suitable for forming the insulating layer between alloy films and metal substrates in the thin film sensor fabrication process. Currently, the most commonly used methods for preparing insulating films include magnetron sputtering, natural oxidation, electron beam evaporation, anodization, sol-gel, and chemical vapor deposition. Thin films deposited using different preparation methods vary significantly in density, adhesion, and corrosion resistance. For example, aluminum oxide produced by aluminum precipitation oxidation forms an irregular grid structure due to the uneven distribution of aluminum particles on the surface, resulting in poor adhesion of the insulating layer. Pinholes are prone to appear in the aluminum oxide insulating layer deposited by electron beam evaporation, causing a short circuit between the sensor circuit layer and the metal substrate, leading to insulation failure.

[0004] In the prior art, during the use of thin film sensors, the film adhesion is relatively weak and the insulation performance is easily lost during use; therefore, we have made improvements to this and proposed an aluminum oxide insulating film based on magnetron sputtering deposition. Utility Model Content

[0005] The purpose of the utility model is to address the problem that the film adhesion of the current thin film sensor design is relatively weak and the insulation performance is easily invalidated during use.

[0006] In order to achieve the above-mentioned purpose of the utility model, the utility model provides the following technical solutions:

[0007] Aluminum oxide insulating film based on magnetron sputtering deposition method is used to improve the above problems.

[0008] The specific application is as follows:

[0009] An aluminum oxide insulating film based on a magnetron sputtering deposition method includes a mirror stainless steel substrate and an insulating film. The insulating film includes a plasma layer, a gas action layer, a sputtering layer and a target layer. A protective layer is provided at the outer end of the mirror stainless steel substrate. The outer end of the protective layer adheres to the plasma layer. The gas action layer and the sputtering layer act in a mixed manner on the outer side of the plasma layer. A hollow layer is provided between the outer ends of the gas action layer and the sputtering layer and the target layer.

[0010] As the preferred technical solution of the present application, the protective layer is a dust-free and sterile film layer, the plasma layer is deposited by mixing argon and oxygen under a high vacuum state, and the injection pressure of argon and oxygen is stable at 0.5 to 2.5 Pa.

[0011] As a preferred technical solution of the present application, the distance between the target layer and the mirror stainless steel substrate ranges from 50 to 100 mm.

[0012] As the preferred technical solution of this application, the sputtering power density of the sputtered layer is 0.015W / mm 2 ~0.030W / mm 2 The sputtering time of the sputtering layer is 2 to 6 hours.

[0013] As a preferred technical solution of the present application, the material of the target layer is aluminum oxide.

[0014] Compared with the prior art, the present invention has the following beneficial effects:

[0015] In the scheme of this application:

[0016] The insulating film obtained by sputtering through the plasma layer, gas action layer and sputtering layer under high vacuum has good adhesion, better density, no pinholes, and avoids the short circuit between the sensor circuit layer and the metal substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 Schematic diagram of the overall structure of the aluminum oxide insulating film based on the magnetron sputtering deposition method provided in this application.

[0018] Indicated in the figure:

[0019] 1. Insulating film; 2. Mirror stainless steel substrate; 3. Protective layer; 4. Plasma layer; 5. Gas action layer; 6. Sputtering layer; 7. Target layer; 8. Hollow layer. DETAILED DESCRIPTION

[0020] To make the purpose, technical solutions and advantages of the embodiments of the present invention more clear, the technical solutions in the embodiments of the present invention will be described clearly and completely in conjunction with the accompanying drawings. Obviously, the embodiments described are only part of the embodiments of the present invention, not all of them.

[0021] Therefore, the following detailed description of the embodiments of the present invention is not intended to limit the scope of the claimed invention, but merely represents some embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative effort are within the scope of protection of the present invention. It should be noted that the embodiments of the present invention and the features and technical solutions in the embodiments may be combined with each other unless there is a conflict.

[0022] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, it does not require further definition or explanation in subsequent drawings.

[0023] like Figure 1 As shown, this embodiment proposes an aluminum oxide insulating film based on a magnetron sputtering deposition method, including a mirror stainless steel substrate 2 and an insulating film 1, the insulating film 1 including a plasma layer 4, a gas action layer 5, a sputtering layer 6 and a target layer 7, a protective layer 3 is provided at the outer end of the mirror stainless steel substrate 2, the outer end of the protective layer 3 and the plasma layer 4 are adhered to each other, the gas action layer 5 and the sputtering layer 6 are mixed and act on the outside of the plasma layer 4, and a hollow layer 8 is provided between the outer ends of the gas action layer 5 and the sputtering layer 6 and the target layer 7.

[0024] The protective layer 3 is a dust-free and sterile film layer. The plasma layer 4 is deposited by mixing argon and oxygen in a high vacuum state. The injection pressure of argon and oxygen is stable at 0.5-2.5 Pa, and the percentage of oxygen is 0-40%.

[0025] The distance between the target layer 7 and the mirror stainless steel substrate 2 is in the range of 50 to 100 mm. The material of the target layer 7 is alumina. Alumina as a target material can ensure that a uniform and continuous material flow can be provided during the magnetron sputtering process, which is conducive to the precise stacking of the insulating film 1.

[0026] The sputtering power density of the sputtered layer 6 is 0.015 W / mm 2 ~0.030W / mm 2 The sputtering time of the sputtering layer 6 is 2 to 6 hours. When the sputtering power density and sputtering time of the sputtering layer 6 are within this range, the stability of the sputtering can be ensured, the ion activity of argon and oxygen can be improved, and the flatness of the insulating film 1 can be increased.

[0027] The specific preparation process of the aluminum oxide insulating film based on the magnetron sputtering deposition method of the utility model is as follows:

[0028] A radio frequency magnetron sputtering method in a magnetron sputtering deposition method is used, with aluminum oxide being used as the target material for the target layer 7, and the target-substrate distance between the target material and the mirror stainless steel substrate 2 being controlled in the range of 50 to 100 mm;

[0029] First, the protective layer 3 on the mirror stainless steel substrate 2 is ultrasonically cleaned with deionized water, anhydrous ethanol, and deionized water for 15 minutes, and finally dried in an oven to ensure that the protective layer 3 is sterile and dust-free; and then placed in the environment of a high vacuum deposition system;

[0030] Next, argon and oxygen are introduced into the protective layer 3, and the gas pressure is controlled to be a suitable stable value between 0.5 and 2.5 Pa, wherein the percentage of oxygen is 0 to 40%, thereby obtaining a plasma composed of high-density aluminum oxide molecules / ions, forming a plasma layer 4;

[0031] Furthermore, by mutually squeezing the plasma layer 4 and the sputtering layer 6, during the squeezing process, the deposition is applied to the gas action layer 5, and the power density of the magnetron sputtering is set to be controlled within the range of 0.015W / mm2 to 0.030W / mm2, and the sputtering time is 2 to 6 hours, and the deposition is applied to the surface of the mirror stainless steel substrate 2 as the sputtering layer 6 attached thereto;

[0032] It is deposited on a mirror stainless steel substrate 2 under high vacuum to form an insulating film 1 as a whole. The formed insulating film 1 has good adhesion, better density, no pinholes, and avoids the formation of a short circuit between the sensor circuit layer and the metal substrate.

[0033] The above embodiments are only used to illustrate the present invention and are not intended to limit the technical solutions described in the present invention. Although this specification has described the present invention in detail with reference to the above embodiments, the present invention is not limited to the above specific implementation methods. Therefore, any modification or equivalent replacement of the present invention; and all technical solutions and improvements thereof that do not depart from the spirit and scope of the present invention are included in the scope of the claims of the present invention.

Claims

1. An aluminum oxide insulating film based on a magnetron sputtering deposition method, comprising a mirror stainless steel substrate (2) and an insulating film (1), characterized in that: The insulating film (1) comprises a plasma layer (4), a gas action layer (5), a sputtering layer (6) and a target material layer (7); a protective layer (3) is provided at the outer end of the mirror stainless steel substrate (2); the outer end of the protective layer (3) and the plasma layer (4) are adhered to each other; the gas action layer (5) and the sputtering layer (6) are mixed and act on the outer side of the plasma layer (4); and a hollow layer (8) is provided between the outer ends of the gas action layer (5) and the sputtering layer (6) and the target material layer (7).

2. The aluminum oxide insulating film based on magnetron sputtering deposition method according to claim 1, characterized in that: The distance between the target layer (7) and the mirror stainless steel substrate (2) is in the range of 50 to 100 mm.

3. The aluminum oxide insulating film based on magnetron sputtering deposition method according to claim 1, characterized in that: The sputtering power density of the sputtering layer (6) is 0.015 W / mm 2 ~0.030W / mm 2 The sputtering time of the sputtering layer (6) is 2 to 6 hours.

4. The aluminum oxide insulating film based on magnetron sputtering deposition method according to claim 1, characterized in that: The target layer (7) is made of aluminum oxide.

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