Spray plate and thin film deposition equipment

Abstract

The utility model discloses a spraying plate and thin film deposition equipment. The spraying plate comprises a hole opening area. The trepanning area comprises a process hole area and a peripheral trepanning area, the process hole area is circular, the peripheral trepanning area is annular, and the peripheral trepanning area is arranged around the outermost circle of the process hole area; the ratio of the diameter corresponding to the outermost ring of the peripheral opening area to the diameter of the wafer is 1.05-1.10; and the single-hole flow of a single hole in the peripheral hole area is smaller than that of a single hole in the process hole area.

Description

Technical Field

[0001] The utility model relates to semiconductor equipment, in particular to a shower plate of semiconductor process plasma chemical vapor deposition (CVD) equipment. Background Art

[0002] In the prior art, in semiconductor process plasma chemical vapor deposition (CVD) equipment, different reaction source gases or liquid sources are sprayed onto the wafer surface through a shower plate. Therefore, the design of the shower plate is extremely important in the semiconductor process, and the opening distribution area of ​​different shower plates also has different effects on the process and cleaning process.

[0003] For example, if the shower plate opening area is too small, the wafer edge thickness will be low and the cleaning effect will be poor. Alternatively, if the shower plate opening area is too large, thin films will form on areas such as the heating plate, generating particles and requiring frequent disassembly and cleaning, which will inconvenience the chamber maintenance.

[0004] Therefore, the design of the opening surface of the spray plate is crucial to the process effect, process stability and cleaning effect. Utility Model Content

[0005] In order to optimize the process effect and cleaning efficiency of thin film deposition, the utility model provides a spray plate that simultaneously ensures the process and cleaning effects.

[0006] The shower plate includes an opening area, which includes a process hole area and a peripheral opening area.

[0007] The process hole area is circular, the peripheral opening area is annular, and the peripheral opening area is arranged around the outermost circle of the process hole area.

[0008] The ratio of the diameter corresponding to the outermost circle of the peripheral opening area to the wafer diameter is 1.05-1.10.

[0009] The single-hole flow rate of a single opening in the peripheral opening area is smaller than the single-hole flow rate of a single opening in the process hole area.

[0010] In one embodiment, the process hole area has a plurality of openings, each opening having a first aperture; the peripheral opening area has a plurality of openings, each opening having a second aperture.

[0011] In one embodiment, the first aperture is larger than the second aperture.

[0012] In one embodiment, each opening in the peripheral opening region is a straight hole.

[0013] In one embodiment, each opening in the process hole area forms an equilateral triangle with its two adjacent openings; the outermost openings in the process hole area and the openings in the peripheral opening area form an opening arrangement in units of an equilateral triangle.

[0014] In one embodiment, every six openings in the process hole area form a regular hexagon; the outermost openings in the process hole area and the openings in the peripheral opening area form an opening arrangement in units of regular hexagons.

[0015] In one embodiment, the openings in the process hole area are distributed circumferentially in multiple layers; and the openings in the peripheral opening area are distributed circumferentially.

[0016] In one embodiment, each opening in the process hole area is a three-step process hole.

[0017] In one embodiment, each opening in the process hole area is a two-step process hole.

[0018] In one embodiment, each opening in the process hole area is a first-step process hole.

[0019] The utility model also provides a thin film deposition device, which includes a substrate support and the aforementioned spray plate.

[0020] The utility model has carefully designed the coordination between the peripheral openings and process holes of the spray plate and thin film deposition equipment, as well as the ratio of the opening area to the wafer area, so as to take into account both the process effect and the cleaning efficiency, and ensure the optimization of the process effect and purge efficiency of different CVD depositions. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] The above utility model content and the following detailed description of the present invention will be better understood when read in conjunction with the accompanying drawings. It should be noted that the accompanying drawings are only examples of the utility model claimed for protection. In the accompanying drawings, the same reference numerals represent the same or similar elements.

[0022] Figure 1 A schematic diagram of a shower plate opening according to an embodiment of the present invention is shown;

[0023] Figure 2 A schematic diagram of a shower plate opening according to an embodiment of the present invention is shown;

[0024] Figure 3 A schematic diagram of a shower plate opening according to an embodiment of the present invention is shown;

[0025] Figure 4 A diagram showing a shower plate opening according to an embodiment of the present invention is shown;

[0026] Figure 5 A partial cross-sectional view of the opening area of ​​a shower plate according to an embodiment of the present invention is shown;

[0027] Figure 6 A partial cross-sectional view of the opening area of ​​a shower plate according to an embodiment of the present invention is shown;

[0028] Figure 7 A partial cross-sectional view of an opening area of ​​a shower plate according to an embodiment of the present invention is shown. DETAILED DESCRIPTION

[0029] The detailed features and advantages of the present invention are described in detail in the specific embodiments below. The content is sufficient for any person skilled in the art to understand the technical content of the present invention and implement it accordingly, and based on the description, claims and drawings disclosed in this specification, those skilled in the art can easily understand the relevant purposes and advantages of the present invention. Although the description of the present invention will be introduced in conjunction with the preferred embodiment, this does not mean that the features of this utility model are limited to this embodiment. On the contrary, the purpose of introducing the utility model in conjunction with the embodiment is to cover other options or modifications that may be extended based on the claims of the present invention. In order to provide an in-depth understanding of the present invention, the following description will include many specific details. The present invention can also be implemented without using these details. In addition, in order to avoid confusion or blurring the focus of the present invention, some specific details will be omitted in the description.

[0030] In the description of this utility model, it should be noted that, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "connected" should be understood in a broad sense. For example, they can refer to fixed connections, detachable connections, or integral connections; mechanical connections, electrical connections; direct connections, indirect connections through an intermediate medium, and internal communication between two components. Those skilled in the art will understand the specific meanings of the above terms in this utility model based on the specific circumstances.

[0031] Furthermore, the terms "upper," "lower," "left," "right," "top," "bottom," "horizontal," and "vertical" used in the following description should be understood to refer to the orientations depicted in that section and the accompanying drawings. These relative terms are used solely for convenience of description and do not necessarily imply that the devices described herein must be manufactured or operated in a specific orientation. Therefore, they should not be construed as limiting the present invention.

[0032] It is understood that although the terms "first," "second," "third," etc. may be used herein to describe various components, channels, assemblies, regions, layers, and / or portions, these components, channels, assemblies, regions, layers, and / or portions should not be limited by these terms, and these terms are merely used to distinguish different components, channels, assemblies, regions, layers, and / or portions. In addition, the terms "first," "second," and "third" are used for descriptive purposes only and should not be understood as indicating or implying relative importance.

[0033] As used in this application and the claims, unless the context clearly indicates otherwise, the words "a," "an," "an," and / or "the" are not intended to refer to the singular but may include the plural. Generally speaking, the terms "comprises" and "include" only indicate the inclusion of the steps and elements specifically identified, and these steps and elements do not constitute an exclusive list. A method or apparatus may also include other steps or elements.

[0034] In some embodiments, numbers are used to describe the quantity of components and attributes. It should be understood that such numbers used in the description of the embodiments are modified by the modifiers "about", "approximately" or "substantially" in some examples. Unless otherwise stated, "about", "approximately" or "substantially" indicate that the numbers are allowed to vary by ±20%. Accordingly, in some embodiments, the numerical parameters used in the description and claims are approximate values, which may change according to the required features of individual embodiments. In some embodiments, the numerical parameters should take into account the specified significant digits and adopt the general method of retaining digits. Although the numerical domains and parameters used to confirm the breadth of their range in some embodiments of the present application are approximate values, in specific embodiments, the settings of such numerical values ​​are as accurate as possible within the feasible range.

[0035] At the same time, this application uses specific terms to describe the embodiments of this application. For example, "one embodiment," "an embodiment," and / or "some embodiments" refer to a certain feature, structure, or characteristic related to at least one embodiment of this application. Therefore, it should be emphasized and noted that "one embodiment," "an embodiment," or "an alternative embodiment" mentioned twice or multiple times in different locations in this specification does not necessarily refer to the same embodiment. In addition, certain features, structures, or characteristics in one or more embodiments of this application may be appropriately combined.

[0036] Figure 1 A schematic diagram of a shower plate opening according to an embodiment of the present invention is shown.

[0037] The shower plate has an opening area 100. The opening area 100 includes a process hole area 101 and a peripheral opening area 102. The process hole area 101 is circular, and the peripheral opening area 102 is annular. The inner circle of the peripheral opening area 102 is arranged around the outermost circle of the process hole area 101.

[0038] After the process gas is introduced into the shower plate, the process hole area 101 and the peripheral opening area 102 both eject the process gas. After the cleaning gas (or purge gas) is introduced into the shower plate, the process hole area 101 and the peripheral opening area 102 both eject the cleaning gas (or purge gas).

[0039] The process hole area 101 is used to ensure process results. The process hole area 101 comprises a plurality of openings arranged according to a first pattern. Each opening has a first aperture. The first pattern dictates that each opening and its two adjacent openings form an equilateral triangle. For example, the center area 103 of the shower plate is an equilateral triangle.

[0040] The peripheral opening region 102 has a plurality of openings. Each opening has a second aperture. The openings in the peripheral opening region 102 and the openings at the outermost periphery of the process hole region, three at a time, form an equilateral triangle. In other words, the openings at the outermost periphery of the process hole region and the openings in the peripheral opening region form an opening arrangement based on an equilateral triangle.

[0041] In one embodiment, the openings in the peripheral opening region 102 are straight holes.

[0042] In one embodiment, the second aperture of the openings in the peripheral opening region 102 is smaller than the first aperture of the openings in the process hole region 101 .

[0043] Since the apertures in the peripheral opening area 102 are very small, they do not cause a change in the overall flow resistance of the shower plate. During the cleaning process, the cleaning gas NF3 extends through the shower plate through the process hole area and the peripheral opening area, thereby achieving a cleaning effect on the entire cavity.

[0044] In one embodiment, taking a 12-inch wafer as an example, its diameter is 300 mm. The area range of the process hole region 101 of the shower plate can be less than (i.e., the diameter range is between 300mm and 315mm). The hole shape and hole distribution are not limited. The peripheral opening area 102 is distributed according to the distribution law of the process holes. In the area between 315mm and 330mm in diameter, the cleaning efficiency can be increased.

[0045] Figure 2 A schematic diagram of a shower plate opening according to an embodiment of the present invention is shown.

[0046] The shower plate has an opening area 200 , which includes a process hole area 201 and a peripheral opening area 202 .

[0047] The process hole area 201 is circular, the peripheral opening area 202 is annular, and the inner circle of the peripheral opening area 202 is arranged around the outermost circle of the process hole area 201 .

[0048] After the process gas is introduced into the shower plate, the process gas is ejected from both the process hole area 201 and the peripheral opening area 202. After the cleaning gas (or purge gas) is introduced into the shower plate, the cleaning gas (or purge gas) is ejected from both the process hole area 201 and the peripheral opening area 202.

[0049] Process hole area 201 is used to ensure process results. Process hole area 201 has multiple openings arranged according to a second pattern. Each opening has a first aperture. The second pattern is that every six openings form a regular hexagon. For example, the center area 203 of the shower plate is a regular hexagon.

[0050] The peripheral opening region 202 has a plurality of openings. Each opening has a second aperture. Six openings in the peripheral opening region 102 and the openings at the outermost periphery of the process hole region form a regular hexagon. In other words, the openings at the outermost periphery of the process hole region and the openings in the peripheral opening region form an opening arrangement based on regular hexagons.

[0051] In one embodiment, the openings in the peripheral opening region 202 are straight holes.

[0052] In one embodiment, the second aperture of the openings in the peripheral opening region 202 is smaller than the first aperture of the openings in the process hole region 201 .

[0053] Since the aperture of the openings in the peripheral opening area 202 is very small, it does not cause a change in the overall flow resistance of the spray plate. During the cleaning process, the NF3 gas used for cleaning extends through the spray plate through the process hole area and the peripheral opening area, thereby achieving a cleaning effect on the entire cavity.

[0054] In one embodiment, taking a 12-inch wafer as an example, its diameter is 300 mm. The area range of the process hole area 201 of the shower plate can be less than (i.e., the diameter range is between 300mm and 315mm). The hole shape and hole distribution are not limited. The peripheral opening area 202 is distributed according to the distribution law of the process holes. In the area between 315mm and 330mm in diameter, the cleaning efficiency can be increased.

[0055] Figure 3 A schematic diagram of a shower plate opening according to an embodiment of the present invention is shown.

[0056] The shower plate has an opening area 300 , which includes a process hole area 301 and a peripheral opening area 302 .

[0057] The process hole area 301 is circular, the peripheral opening area 302 is annular, and the inner circle of the peripheral opening area 302 is arranged around the outermost circle of the process hole area 301 .

[0058] After the process gas is introduced into the shower plate, the process gas is ejected from both the process hole area 301 and the peripheral opening area 302. After the cleaning gas (or purge gas) is introduced into the shower plate, the cleaning gas (or purge gas) is ejected from both the process hole area 301 and the peripheral opening area 302.

[0059] The process hole area 301 is used to ensure process results. The process hole area 301 comprises multiple openings arranged according to a third rule. Each opening has a first aperture. The third rule is that the openings are circumferentially distributed in multiple layers. For example, the center area 303 of the shower plate is circumferentially distributed in multiple layers.

[0060] The peripheral opening region 302 has a plurality of openings. Each opening has a second aperture. The openings in the peripheral opening region 302 are distributed circumferentially.

[0061] In one embodiment, the openings in the peripheral opening region 302 are straight holes.

[0062] In one embodiment, the second aperture of the openings in the peripheral opening region 302 is smaller than the first aperture of the openings in the process hole region 301 .

[0063] Since the aperture of the openings in the peripheral opening area 302 is very small, it does not cause a change in the overall flow resistance of the shower plate. During the cleaning process, the cleaning gas NF3 extends through the shower plate through the process hole area and the peripheral opening area, thereby achieving a cleaning effect on the entire cavity.

[0064] In one embodiment, taking a 12-inch wafer as an example, its diameter is 300 mm. The area range of the process hole region 301 of the shower plate can be less than (i.e., the diameter range is between 300mm and 315mm). The hole shape and hole distribution are not limited. The peripheral opening area 302 is distributed according to the distribution law of the process holes. In the area between 315mm and 330mm in diameter, the cleaning efficiency can be increased.

[0065] Figure 4 A physical diagram of the openings in a shower plate according to an embodiment of the present invention is shown.

[0066] The shower plate has an opening area 400 , which includes a process hole area 401 and a peripheral opening area 402 .

[0067] The process hole area 401 is circular, the peripheral opening area 402 is annular, and the inner circle of the peripheral opening area 402 is arranged around the outermost circle of the process hole area 401 .

[0068] After the process gas is introduced into the shower plate, the process gas is ejected from both the process hole area 401 and the peripheral opening area 402. After the cleaning gas (or purge gas) is introduced into the shower plate, the cleaning gas (or purge gas) is ejected from both the process hole area 401 and the peripheral opening area 402.

[0069] The process hole area 401 is used to ensure the process effect. The process hole area 401 has a plurality of openings arranged in a regular pattern. Each opening has a first aperture.

[0070] The peripheral opening area 402 has a plurality of openings, each of which has a second aperture.

[0071] In one embodiment, the openings in the peripheral opening region 402 are straight holes.

[0072] In one embodiment, the second aperture of the openings in the peripheral opening region 402 is smaller than the first aperture of the openings in the process hole region 401 .

[0073] Since the aperture of the openings in the peripheral opening area 402 is very small, it does not cause a change in the overall flow resistance of the shower plate. During the cleaning process, the cleaning gas NF3 extends through the shower plate through the process hole area and the peripheral opening area, thereby achieving a cleaning effect on the entire cavity.

[0074] In one embodiment, taking a 12-inch wafer 403 as an example, its diameter is 300 mm. The area range of the process hole region 401 of the shower plate can be less than (i.e., the diameter range is between 300mm and 315mm). The hole shape and hole distribution are not limited. The peripheral opening area 402 is distributed according to the distribution law of the process holes. In the area between 315mm and 330mm in diameter, the cleaning efficiency can be increased.

[0075] comprehensive Figures 1 to 4 , the optimal range of the ratio of the outermost circle of all opening positions to the wafer size in the utility model is 1.05-1.10, that is, the optimal range of the ratio of the diameter corresponding to the outermost circle of the peripheral opening area to the wafer diameter is 1.05-1.10. Within this ratio range, it is possible to meet different process requirements while taking into account cleaning efficiency. If this ratio is too large, although the cleaning efficiency will be improved during the cleaning process, a thin film will appear in the non-wafer area during the process, and even particulate matter will be generated. If this ratio is too small, although the occurrence of thin films in the non-wafer area is reduced during the process, the cleaning efficiency will decrease during the cleaning process.

[0076] Figure 5 A partial cross-sectional view of an opening area of ​​a shower plate according to an embodiment of the present invention is shown.

[0077] like Figure 5 As shown, each opening 501 in the peripheral opening area is a straight hole. Each opening 502 in the process hole area is a three-step shape. The single hole flow rate of a single opening in the peripheral opening area is smaller than the single hole flow rate of a single opening in the process hole area.

[0078] In one embodiment, the aperture of each opening in the peripheral opening area is smaller than or equal to the minimum aperture of the three-step process hole.

[0079] Figure 6 A partial cross-sectional view of an opening area of ​​a shower plate according to an embodiment of the present invention is shown.

[0080] like Figure 6 As shown, each opening 601 in the peripheral opening area is a straight hole. Each opening 602 in the process hole area is a second-step shape. The single hole flow rate of a single opening in the peripheral opening area is smaller than the single hole flow rate of a single opening in the process hole area.

[0081] In one embodiment, the aperture of each opening in the peripheral opening area is smaller than or equal to the minimum aperture of the second-order process hole.

[0082] Figure 7 A partial cross-sectional view of an opening area of ​​a shower plate according to an embodiment of the present invention is shown.

[0083] like Figure 7 As shown, each opening 701 in the peripheral opening area is a straight hole. Each opening 702 in the process hole area is a first-step shape. The single hole flow rate of a single opening in the peripheral opening area is smaller than the single hole flow rate of a single opening in the process hole area.

[0084] In one embodiment, the aperture of each opening in the peripheral opening area is smaller than or equal to the aperture of the first-step process hole.

[0085] The present invention does not impose any restrictions on the hole shape, but in order to prevent the process effect from being affected, the single hole flow rate in the peripheral opening area needs to be smaller than that in the process area, so a straight hole design is preferably adopted.

[0086] The utility model also provides a thin film deposition device, which includes a substrate support and the aforementioned spray plate.

[0087] Similarly, it should be noted that in order to simplify the description of the present disclosure and thus facilitate understanding of one or more utility model embodiments, the foregoing description of the present disclosure embodiments sometimes combines multiple features into a single embodiment, figure, or description thereof. However, this disclosure method does not mean that the present disclosure requires more features than those mentioned in the claims.

[0088] Similarly, it should be pointed out that although the present invention has been described with reference to the current specific embodiments, ordinary technicians in this technical field should realize that the above embodiments are only used to illustrate the present invention, and various equivalent changes or substitutions can be made without departing from the spirit of the present invention. Therefore, as long as the changes and modifications to the above embodiments are within the scope of the essential spirit of the present invention, they will fall within the scope of the claims of this application.

Claims

1. A spray plate, characterized in that: The spray plate comprises: Opening area, including process hole area and peripheral opening area; The process hole area is circular, the peripheral opening area is annular, and the peripheral opening area is arranged around the outermost circle of the process hole area; The ratio of the diameter corresponding to the outermost circle of the peripheral opening area to the wafer diameter is 1.05-1.10; The single-hole flow rate of a single opening in the peripheral opening area is smaller than the single-hole flow rate of a single opening in the process hole area.

2. The shower plate according to claim 1, wherein: The process hole area has a plurality of openings, each opening having a first aperture; the peripheral opening area has a plurality of openings, each opening having a second aperture.

3. The shower plate according to claim 2, wherein: The first aperture is larger than the second aperture.

4. The shower plate according to claim 1, wherein: Each opening in the peripheral opening area is a straight hole.

5. The shower plate according to claim 1, wherein: Each opening in the process hole area and its two adjacent openings form an equilateral triangle; the outermost openings in the process hole area and the openings in the peripheral opening area form an opening arrangement in an equilateral triangle unit.

6. The shower plate according to claim 1, wherein: Every six openings in the process hole area form a regular hexagon; the outermost openings in the process hole area and the openings in the peripheral opening area form an opening arrangement with a regular hexagon as a unit.

7. The shower plate according to claim 1, wherein: The openings in the process hole area are distributed circumferentially in multiple layers; the openings in the peripheral opening area are distributed circumferentially.

8. The shower plate according to claim 1, wherein: Each opening in the process hole area is a three-step process hole.

9. The shower plate according to claim 1, wherein: Each opening in the process hole area is a second-order process hole.

10. The shower plate according to claim 1, wherein: Each opening in the process hole area is a first-order process hole.

11. A thin film deposition device comprising a substrate support and the shower plate according to any one of claims 1 to 10.

Images