Driving mechanism of MEMS galvanometer and MEMS galvanometer

Abstract

The utility model discloses a driving mechanism of an MEMS galvanometer and the MEMS galvanometer, and relates to the technical field of MEMS galvanometers. A first metal layer of the driving mechanism comprises a first graphical circuit and a plurality of positioning blocks arranged at intervals, all the positioning blocks and the first graphical circuit are arranged at intervals, a dielectric film layer is located on the top face of the first metal layer and comprises a plurality of positioning holes in one-to-one correspondence with the positioning blocks, and a second metal layer is arranged on the top face of the dielectric film layer. The second metal layer comprises a plurality of positioning protrusions and second graphical circuits, the positioning protrusions are arranged in one-to-one correspondence with the positioning holes, one ends of the positioning protrusions abut against the second graphical circuits, and the other ends of the positioning protrusions penetrate through the corresponding positioning holes to abut against the corresponding positioning blocks so as to limit the second metal layer. The driving mechanism prepared by the utility model has stronger structural stability, can increase the resistance when the second graphical circuit is relatively layered or slipped, and realizes the fixation of the second metal layer.

Description

Technical Field

[0001] The utility model relates to the technical field of MEMS (Micro-Electro-Mechanical System) galvanometers, in particular to a driving mechanism of a MEMS galvanometer and a MEMS galvanometer. Background Art

[0002] In the MEMS galvanometer process, due to the particularity of the operation of MEMS devices, the circuit morphology of the metal layer of the driving circuit is diverse and widely distributed, and the surface of the metal layer of the driving circuit is not covered with a dielectric film for protection and reinforcement. As a result, in special working environments, for example, when the temperature difference changes greatly, the metal layer on the top of the driving circuit and the dielectric film layer at the bottom of the metal layer may delaminate or slip and peel off due to thermal expansion and contraction of the film layer or changes in stress, resulting in abnormal appearance or even functional failure of the MEMS device.

[0003] In the prior art, a reinforcement layer is usually deposited on the surface of the metal layer using PECVD (Plasma Enhanced Chemical Vapor Deposition) technology to prevent relative displacement between the metal layer and the dielectric film layer (refer to Figure 3 ), however, the presence of the reinforcement layer will affect the stress distribution and other functions of the MEMS galvanometer. In addition, the existing technology also uses high temperature to eliminate the overall stress after depositing the metal layer. However, the metal layer of the MEMS galvanometer is usually made of gold, which is not resistant to high temperatures and will also affect the driving function of the MEMS galvanometer. Optimizing the metal deposition process between the metal layer and the dielectric film layer cannot solve the impact of temperature changes. Utility Model Content

[0004] An object of the first aspect of the present invention is to provide a driving mechanism for a MEMS galvanometer, so as to solve the technical problem in the prior art that the metal layer in the driving mechanism for a MEMS galvanometer has poor adhesion under special circumstances.

[0005] Another object of the first aspect of the present utility model is to improve the structural stability of the drive mechanism.

[0006] The second aspect of the present invention aims to provide a MEMS galvanometer, comprising the above-mentioned driving mechanism.

[0007] According to the purpose of the first aspect of the present invention, the present invention provides a driving mechanism for a MEMS galvanometer, comprising:

[0008] a first metal layer located on a top surface of the substrate, the first metal layer comprising a first patterned circuit and a plurality of spaced-apart positioning blocks, wherein all the spaced-apart positioning blocks are spaced-apart from the first patterned circuit;

[0009] a dielectric film layer, located on a top surface of the first metal layer, the dielectric film layer comprising a plurality of positioning holes arranged in a one-to-one correspondence with the positioning blocks;

[0010] A second metal layer is provided on the top surface of the dielectric film layer, the second metal layer includes a plurality of positioning protrusions and a second graphic circuit arranged in a one-to-one correspondence with the positioning holes, the positioning protrusions are arranged so that one end thereof abuts against the second graphic circuit, and the other end passes through the corresponding positioning hole and abuts against the corresponding positioning block to limit the second metal layer; wherein,

[0011] The first metal layer, the dielectric film layer and the second metal layer are prepared by PECVD technology.

[0012] Optionally, the ratio of the top surface of the positioning protrusion to the width of the second patterned circuit is any value in the range of 1:3-1:1.5.

[0013] Optionally, the width ratio of the bottom surface of the positioning protrusion to the positioning block is any value in the range of 1:3-1:1.5.

[0014] Optionally, two adjacent positioning protrusions are spaced apart by a preset distance, and a ratio of the preset distance to a width of the positioning protrusion is any value between 1-3.

[0015] Optionally, the positioning protrusion may be in any one of a cylindrical, pyramidal or hexahedral shape.

[0016] Optionally, the second metal layer is made of any one of Au, Cu or Al.

[0017] Optionally, the dielectric film layer is made of any one of silicon oxide, silicon nitride or a combination thereof.

[0018] Optionally, the thickness of the dielectric film layer is any value in the range of 1.0 μm-1.5 μm.

[0019] According to the purpose of the second aspect of the present invention, the present invention further provides a MEMS galvanometer, comprising any one of the driving mechanisms described above.

[0020] The utility model arranges a plurality of positioning blocks spaced from the first graphic circuit on the first metal layer of the driving mechanism, and deposits the positioning protrusions of the second metal layer in the positioning holes by PECVD, so as to arrange the positioning protrusions abutting against the positioning blocks at the bottom of the second graphic circuit. This can increase the resistance when relative delamination or slippage occurs between the second graphic circuit and the dielectric film layer, thereby improving the adhesion of the second metal layer, preventing the second graphic circuit and the dielectric film layer from peeling off due to relative delamination or slippage, and avoiding abnormal appearance or functional failure of the MEMS galvanometer device.

[0021] Furthermore, the width ratio of the bottom surface of the positioning protrusion to the positioning block of the utility model is any value in the range of 1:3-1:1.5, that is, the top surface width of the positioning block is greater than the top surface width of the positioning protrusion, that is, the width of the positioning block is greater than the width of the positioning hole, so that the positioning block is always fixed to the bottom of the dielectric film layer, and at the same time ensures that the bottom surface of the positioning protrusion is completely in contact with the top surface of the positioning block, thereby increasing the resistance when relative delamination or slippage occurs between the second graphic circuit and the dielectric film layer, and improving the structural stability of the driving mechanism.

[0022] The above description is only an overview of the technical solution of the present invention. In order to more clearly understand the technical means of the present invention and to implement it according to the contents of the specification, the following is a detailed description of the preferred embodiments of the present invention in conjunction with the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Hereinafter, some specific embodiments of the present invention will be described in detail in an exemplary and non-limiting manner with reference to the accompanying drawings. The same reference numerals in the accompanying drawings indicate the same or similar components or parts. It should be understood by those skilled in the art that these drawings are not necessarily drawn to scale. In the accompanying drawings:

[0024] Figure 1 is a schematic structural diagram of a driving mechanism according to an embodiment of the present utility model;

[0025] Figure 2 is a schematic scanning electron microscope image of a driving mechanism according to one embodiment of the utility model;

[0026] Figure 3 Schematic scanning electron microscope image of the driving mechanism in the prior art.

[0027] Reference numerals:

[0028] 100 - driving mechanism, 10 - first metal layer, 11 - first graphic circuit, 12 - positioning block, 20 - dielectric film layer, 21 - positioning hole, 30 - second metal layer, 31 - positioning protrusion, 32 - second graphic circuit. DETAILED DESCRIPTION

[0029] The following embodiments are used to illustrate the present invention, but are not intended to limit the scope of the present invention.

[0030] In order to make the above-mentioned objects, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are described in detail below in conjunction with the accompanying drawings. It will be understood that the specific embodiments described herein are only used to explain the present application, rather than to limit the present application. It should also be noted that, for ease of description, only some, rather than all, structures related to the present application are shown in the accompanying drawings. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of this application.

[0031] As used herein, the terms "comprise," "comprising," and "having," and any variations thereof, are intended to cover non-exclusive inclusions. For example, a process, method, system, product, or apparatus comprising a series of steps or elements is not limited to the listed steps or elements but may optionally include steps or elements not listed, or may optionally include other steps or elements inherent to the process, method, product, or apparatus.

[0032] References herein to "embodiments" mean that a particular feature, structure, or characteristic described in connection with the embodiments may be included in at least one embodiment of the present application. The appearance of this phrase in various places in the specification does not necessarily refer to the same embodiment, nor does it constitute an independent or alternative embodiment that is mutually exclusive of other embodiments. It is understood, both explicitly and implicitly, by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0033] Figure 1 is a schematic structural diagram of a driving mechanism according to an embodiment of the present utility model. Figure 2 is a schematic scanning electron microscope image of a driving mechanism according to an embodiment of the present utility model. Figure 3 Schematic scanning electron microscope image of the driving mechanism in the prior art.

[0034] like Figure 1As shown, the utility model provides a driving mechanism 100 of a MEMS galvanometer, the driving mechanism 100 includes a first metal layer 10, a dielectric film layer 20 and a second metal layer 30, the first metal layer 10 is located on the top surface of the substrate, the first metal layer 10 includes a first graphic circuit 11 and a plurality of positioning blocks 12 arranged at intervals, and all the positioning blocks 12 are spaced apart from the first graphic circuit 11, the dielectric film layer 20 is located on the top surface of the first metal layer 10, the dielectric film layer 20 includes a plurality of positioning holes 21 arranged in a one-to-one correspondence with the positioning blocks 12, the second metal layer 30 is arranged on the top surface of the dielectric film layer 20, the second metal layer 30 includes a plurality of positioning protrusions 31 arranged in a one-to-one correspondence with the positioning holes 21 and a second graphic circuit 32, the positioning protrusion 31 is arranged so that one end thereof abuts the second graphic circuit 32, and the other end passes through the corresponding positioning hole 21 and abuts the corresponding positioning block 12 to limit the second metal layer 30, wherein the first metal layer 10, the dielectric film layer 20 and the second metal layer 30 are prepared by PECVD technology. Here, the positioning protrusion 31 is deposited on the positioning hole 21 by using the PECVD technology.

[0035] In this embodiment, a plurality of positioning blocks 12 spaced apart from the first patterned circuit 11 are provided on the first metal layer 10 of the driving mechanism 100, and the positioning protrusions 31 of the second metal layer 30 are deposited in the positioning holes 21 by PECVD, so that the positioning protrusions 31 abutting against the positioning blocks 12 are provided at the bottom of the second patterned circuit 32. This can increase the resistance to relative delamination or slippage between the second patterned circuit 32 and the dielectric film layer 20, thereby improving the adhesion of the second metal layer 30, preventing the second patterned circuit 32 and the dielectric film layer 20 from peeling off due to relative delamination or slippage, and avoiding abnormal appearance or functional failure of the MEMS galvanometer device.

[0036] In a further embodiment, the width ratio of the top surface of the positioning protrusion 31 to the second patterned circuit 32 is any value in the range of 1:3-1:1.5. That is, the width ratio of the top surface of the positioning protrusion 31 to the second patterned circuit 32 can be 1:3, 1:2.5, 1:2, or 1:1.5, or any value in the range of 1:3-1:1.5. In this embodiment, the width ratio of the top surface of the positioning protrusion 31 to the second patterned circuit 32 is any value in the range of 1:3-1:1.5, that is, the width of the positioning protrusion 31 is smaller than the width of the second patterned circuit 32. This can increase the resistance to relative delamination or slippage between the second patterned circuit 32 and the dielectric film layer 20, thereby improving the structural stability of the second metal layer 30, and can also reduce the impact of the positioning protrusion 31 on the conductive properties of the second patterned circuit 32, thereby improving the structural stability and performance stability of the MEMS galvanometer drive mechanism 100.

[0037] In a further embodiment, the width ratio of the bottom surface of the positioning protrusion 31 to the positioning block 12 is within a range of 1:3-1:1.5, i.e., the width ratio of the bottom surface of the positioning protrusion 31 to the positioning block 12 is 1:3, 1:2.5, 1:2, or 1:1.5, or may be within a range of 1:3-1:1.5. In this embodiment, the width ratio of the bottom surface of the positioning protrusion 31 to the positioning block 12 is within a range of 1:3-1:1.5, i.e., the top surface width of the positioning block 12 is greater than the top surface width of the positioning protrusion 31, i.e., the width of the positioning block 12 is greater than the width of the positioning hole 21. This ensures that the positioning block 12 is always fixed to the bottom of the dielectric film layer 20, while ensuring that the bottom surface of the positioning protrusion 31 is completely in contact with the top surface of the positioning block 12. This increases the resistance to relative delamination or slippage between the second patterned circuit 32 and the dielectric film layer 20, thereby improving the structural stability of the drive mechanism 100.

[0038] In this embodiment, all positioning blocks 12 are spaced apart from the first graphic circuit 11, that is, the power is always cut off between the positioning blocks 12 and the first graphic circuit 11, and the first graphic circuit 11 serves as a conductive layer for transmitting the driving signal to the driving area of ​​the MEMS galvanometer, ensuring that the driving signal can be smoothly transmitted to the galvanometer, thereby preventing the positioning blocks 12 from affecting the conductive performance of the first graphic circuit and improving the driving function of the driving mechanism 100.

[0039] In a further embodiment, two adjacent positioning protrusions 31 are separated by a preset distance, and the ratio of the preset distance to the width of the positioning protrusion 31 is any value from 1 to 3, that is, the ratio of the preset distance to the width of the positioning protrusion 31 can be 1, 1.2, 1.4, 1.6, 1.8, 2, 2.2, 2.4, 2.6, 2.8 or 3, or any value from 1 to 3. In this embodiment, when the ratio of the preset distance between two adjacent positioning protrusions 31 to the width of the positioning protrusion 31 is close to 1, the spacing between the positioning protrusions 31 is smaller, which helps to form more dense connection points when the second metal layer 30 is deposited, thereby enhancing the bonding force between the second metal layer 30 and the dielectric film layer 20. The dense connection point layout can more effectively resist external stress and deformation, and improve positioning stability. In addition, as the ratio increases, that is, the spacing between the positioning protrusions 31 increases, the stress distribution in the second metal layer 30 becomes more uniform, which helps to reduce the risk of structural failure caused by stress concentration and improve the reliability and durability of the MEMS galvanometer. Here, the ratio of the preset distance between two adjacent positioning protrusions 31 to the width of the positioning protrusion 31 is any value in the range of 1-3, that is, the spacing and width of the positioning protrusions 31 can be adjusted according to specific needs to optimize the performance of the MEMS galvanometer.

[0040] In a further embodiment, the positioning protrusion 31 can be cylindrical, prism-shaped, or hexahedral. That is, the positioning hole 21 of the dielectric film layer 20 can be cylindrical, prism-shaped, rectangular, or cubic, or any other structure. The structure of the positioning protrusion 31 is not limited herein. In this embodiment, the positioning protrusion 31 is formed within the positioning hole 21 of the dielectric film layer 20. When the positioning protrusion 31 is cylindrical or hexahedral, the positioning protrusion 31 is structurally stable. The top and bottom surfaces of the positioning protrusion 31 have the same contact area with the second metal layer 30 and the first metal layer 10, respectively. This allows the second patterned circuit 32 to abut against the positioning block 12 via the positioning protrusion 31, thereby securing the second patterned circuit 32 to the surface of the dielectric film layer 20 via the positioning protrusion 31. This helps maintain a tight bond between the second metal layer 30 and the dielectric film layer 20 in harsh environments. The positioning protrusion 31 has a prism-shaped structure, which can maintain a certain structural strength while providing additional bonding area through its inclined surface, helping to enhance the bonding force between the top metal layer and the dielectric film layer 20, thereby further improving the stability of the positioning protrusion 31.

[0041] In a further embodiment, the material of the second metal layer 30 is any one of Au, Cu or Al. In this embodiment, when the material of the second metal layer 30 is Au, since Au has good electrical conductivity and corrosion resistance, it can improve the electrical conductivity and corrosion resistance of the drive mechanism 100. When the material of the second metal layer 30 is Cu, the second metal layer 30 has good electrical conductivity and is relatively low in price, which can reduce the preparation cost of the drive mechanism 100 of the MEMS galvanometer. When the material of the second metal layer 30 is Al, since aluminum has good electrical conductivity and low density, it is beneficial to reduce the weight of the MEMS galvanometer and improve the ease of use of the MEMS galvanometer.

[0042] In a further embodiment, the dielectric film layer 20 is made of silicon oxide, silicon nitride, or a combination thereof. Specifically, the dielectric film layer 20 may be silicon oxide or silicon nitride, or a combination of silicon oxide and silicon nitride. Specifically, the dielectric film layer 20 between the first metal layer 10 and the second metal layer 30 comprises a silicon oxide layer and a silicon nitride layer. In this embodiment, when the dielectric film layer 20 is made of silicon oxide, due to its extremely high insulation properties, the silicon oxide dielectric film layer 20 can effectively isolate electrical signal interference between the two metal layers, ensuring stable operation of the drive mechanism 100. When the dielectric film layer 20 is made of silicon nitride, due to its high hardness and wear resistance, the silicon nitride dielectric film layer 20 can resist mechanical wear and scratches, thereby extending the service life of the MEMS galvanometer. Furthermore, due to its excellent thermal stability, silicon nitride can maintain stable performance in high-temperature environments. Its high thermal conductivity facilitates heat dissipation, preventing overheating of the drive mechanism 100, thereby increasing the service life of the MEMS galvanometer drive mechanism 100.

[0043] In a further embodiment, the thickness of the dielectric film layer 20 is any value in the range of 1.0μm-1.5μm, that is, the thickness of the dielectric film layer 20 can be 1.0μm, 1.1μm, 1.2μm, 1.3μm, 1.4μm or 1.5μm, or any value in the range of 1.0μm-1.5μm. In this embodiment, when the thickness of the dielectric film layer 20 is any value in the range of 1.0μm-1.5μm, the spacing between the first metal layer 10 and the second metal layer 30 can be reduced, the capacitance value can be increased, and the response speed and sensitivity of the driving mechanism 100 can be improved. In addition, the thinner dielectric film layer 20 can make the electric field more concentrated, thereby improving the driving efficiency. In addition, when the thickness of the dielectric film layer 20 is within the range of several tens of thousands of times, it can not only improve the driving performance, but also maintain the stability and durability of the MEMS galvanometer without increasing the weight and volume of the MEMS galvanometer.

[0044] In this embodiment, the preparation method of the driving mechanism 100 is as follows: first, a first metal layer 10 is deposited on a pre-treated substrate, and a first patterned circuit 11 is obtained by photolithography technology. Then, a dielectric film layer 20 is deposited on the first patterned circuit 11, and a positioning hole 21 is formed in the dielectric film layer 20 by micromachining technology. A second metal layer 30 is formed on the surface of the dielectric film layer 20 and in the positioning hole 21 by PECVD technology, and a second patterned circuit 32 is obtained by photolithography technology, thereby preparing the driving mechanism 100 of the MEMS galvanometer.

[0045] The present invention further provides a MEMS galvanometer, comprising any one of the above-mentioned driving mechanisms 100. Detailed description of the driving mechanism 100 of the MEMS galvanometer will not be repeated here.

[0046] The technical features of the above-mentioned embodiments can be combined arbitrarily. In order to make the description concise, not all possible combinations of the technical features in the above-mentioned embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0047] The above-described embodiments merely represent several implementations of the present invention. While the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the utility model patent. It should be noted that a person skilled in the art would be able to make various modifications and improvements without departing from the concept of the present invention, and these modifications and improvements fall within the scope of protection of the present invention. Therefore, the scope of protection of the present utility model patent shall be determined by the appended claims.

Claims

1. A driving mechanism for a MEMS galvanometer, characterized in that: include: a first metal layer located on a top surface of the substrate, the first metal layer comprising a first patterned circuit and a plurality of spaced positioning blocks, wherein all the spaced positioning blocks are spaced from the first patterned circuit; a dielectric film layer, located on a top surface of the first metal layer, the dielectric film layer comprising a plurality of positioning holes arranged in a one-to-one correspondence with the positioning blocks; A second metal layer is provided on the top surface of the dielectric film layer, the second metal layer includes a plurality of positioning protrusions and a second graphic circuit arranged in a one-to-one correspondence with the positioning holes, the positioning protrusions are arranged so that one end thereof abuts against the second graphic circuit, and the other end passes through the corresponding positioning hole and abuts against the corresponding positioning block to limit the second metal layer; wherein, The first metal layer, the dielectric film layer and the second metal layer are prepared by PECVD technology.

2. The driving mechanism according to claim 1, wherein: The ratio of the top surface of the positioning protrusion to the width of the second patterned circuit is any value in the range of 1:3-1:1.

5.

3. The driving mechanism according to claim 2, characterized in that: The width ratio of the bottom surface of the positioning protrusion to the positioning block is any value in the range of 1:3-1:1.

5.

4. The driving mechanism according to claim 3, characterized in that: Two adjacent positioning protrusions are spaced apart by a preset distance, and a ratio of the preset distance to a width of the positioning protrusion is any value between 1 and 3.

5. The driving mechanism according to claim 4, characterized in that: The positioning protrusion may be in any one of a cylindrical, pyramidal or hexahedral shape.

6. The driving mechanism according to claim 5, characterized in that: The second metal layer is made of any one of Au, Cu and Al.

7. The driving mechanism according to any one of claims 1 to 6, characterized in that: The material of the dielectric film layer is any one of silicon oxide, silicon nitride or a combination thereof.

8. The driving mechanism according to claim 7, wherein: The thickness of the dielectric film layer is any value in the range of 1.0 μm to 1.5 μm.

9. A MEMS galvanometer, characterized in that: The drive mechanism comprises the drive mechanism according to any one of claims 1 to 8.

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