Upper cavity cover plate and semiconductor processing equipment
By arranging a first pipeline in the upper cavity cover plate to surround the microwave window, the cooling area is increased, the problem of the etching rate decreasing with increasing temperature is solved, and the effects of stabilizing the etching rate and reducing costs are achieved.
Patent Information
- Application Number
- CN202422810377.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-15
- Publication Date
- 2025-09-19
- Estimated Expiration
- 2034-11-15
AI Technical Summary
In semiconductor processing equipment, the etching rate decreases as the temperature increases, affecting the etching results. Existing technologies fail to effectively control the temperature, resulting in unstable etching rates, and the introduction of complex temperature control equipment increases costs.
An upper cavity cover is designed, which includes a shell reaction cavity, a first pipeline and a microwave window. The first pipeline surrounds three or four sides of the microwave window and is used for the flow of cooling liquid, thereby increasing the cooling area, reducing the temperature of the shell reaction cavity, and stabilizing the etching rate.
By increasing the cooling area and stabilizing the etching rate, the etching results are ensured to meet the process requirements and the etching rate is avoided from decreasing. There is no need to introduce additional complex temperature control equipment, thus reducing process costs.
Smart Images
Figure CN223363118U_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of semiconductor technology, and in particular to an upper cavity cover and semiconductor processing equipment. Background Art
[0002] In semiconductor processing equipment, etching is often required to remove layers such as photoresist. However, with use, the etching rate gradually decreases, resulting in unsatisfactory etching results. The main factors affecting dry etching include energy, pressure, temperature, and gas concentration. When setting the process menu, energy and gas concentration are fixed and do not change significantly. However, there is no setting for temperature, which will change as the etching progresses.
[0003] The microwave ignition process is essentially an exothermic one. As the temperature rises, ion reactions and recombination reach a new equilibrium, causing the higher-energy ions to scatter. This forms a dense oxide on the ceramic surface, reducing reactivity, thereby affecting the plasma concentration in the chamber and lowering the etching rate. Therefore, controlling the temperature has become a pressing technical challenge. Utility Model Content
[0004] In view of this, the purpose of this application is to provide an upper chamber cover and semiconductor processing equipment that can stabilize the etching rate, avoid etching rate drops, ensure that the etching results meet process requirements, and do not require the introduction of additional complex temperature control equipment, thereby reducing process costs. The specific solution is as follows:
[0005] The present application provides an upper cavity cover plate, comprising:
[0006] an upper cavity cover plate, and a shell reaction chamber disposed inside the upper cavity cover plate; the upper cavity cover plate includes a first side surface and a second side surface, the shell reaction chamber is adjacent to the first side surface; the shell reaction chamber is used to generate plasma;
[0007] a first pipeline provided on the first side surface; the first pipeline is used to allow a coolant to flow so as to cool the shell reaction chamber;
[0008] A microwave window is provided on the first side surface, and is used to transmit microwave signals to the shell reaction cavity; the first pipeline surrounds at least three sides of the microwave window.
[0009] In a possible implementation, the first pipeline is a U-shaped structure.
[0010] In a possible implementation manner, the first pipe surrounds four sides of the microwave window.
[0011] In a possible implementation, the method further includes:
[0012] A supplementary cover plate is located on the first side surface of the upper cavity cover plate; the supplementary cover plate has a groove, and the first pipeline is located inside the groove.
[0013] In a possible implementation, the method further includes:
[0014] A second pipe is located on the first side surface, and the second pipe surrounds the first pipe.
[0015] In a possible implementation, the first pipeline and the second pipeline are connected through an intermediate pipeline.
[0016] In one possible implementation, the first end of the second pipeline is connected to the coolant supply pipeline, the second end of the second pipeline is connected to the first end of the intermediate pipeline, the second end of the intermediate pipeline is connected to the first end of the first pipeline, and the second end of the first pipeline is connected to the coolant outflow pipeline.
[0017] In a possible implementation, the caliber of the second pipeline is smaller than the caliber of the first pipeline.
[0018] In a possible implementation, the upper cavity cover plate has a groove, and the second pipeline is located inside the groove.
[0019] The present application also provides a semiconductor processing device, comprising:
[0020] cavity, and the upper cavity cover.
[0021] The present invention provides an upper cavity cover and semiconductor processing equipment, comprising an upper cavity cover, a shell reaction chamber disposed within the upper cavity cover, a first conduit disposed on a first side surface, and a microwave window. The upper cavity cover comprises a first side surface and a second side surface, the shell reaction chamber being adjacent to the first side surface. The shell reaction chamber is configured to generate plasma. The first conduit is configured to allow coolant to flow to cool the shell reaction chamber. The microwave window is configured to transmit microwave signals to the shell reaction chamber. The first conduit surrounds at least three sides of the microwave window. As can be seen, by arranging the first conduit around three sides of the microwave window, the area of the first conduit is maximized, thereby enabling the coolant to more fully cool the shell reaction chamber. The cooling area is greatly increased, thereby reducing the temperature of the shell reaction chamber, ensuring that the temperature of the shell reaction chamber does not rise with the ignition discharge and remains stable. This stabilizes the etching rate, prevents a decrease in the etching rate, and ensures that the etching results meet process requirements. Furthermore, no additional complex temperature control equipment is required, thereby reducing process costs. BRIEF DESCRIPTION OF THE DRAWINGS
[0022] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.
[0023] Figure 1 A schematic cross-sectional view of an upper cavity cover plate provided in an embodiment of the present application is shown;
[0024] Figure 2 A top view of an upper cavity cover provided in an embodiment of the present application is shown;
[0025] Figure 3 A top view of another upper cavity cover provided in an embodiment of the present application is shown;
[0026] Figure 4 A cross-sectional schematic diagram of another upper cavity cover provided in an embodiment of the present application is shown;
[0027] Figure 5 A cross-sectional schematic diagram of a supplementary cover plate provided in an embodiment of the present application is shown;
[0028] Figure 6 A cross-sectional schematic diagram of another upper cavity cover provided in an embodiment of the present application is shown;
[0029] Figure 7 A top view of another upper cavity cover provided in an embodiment of the present application is shown;
[0030] Figure 8 A top view of another upper cavity cover provided in an embodiment of the present application is shown;
[0031] Figure 9 A schematic diagram of a semiconductor processing device provided by an embodiment of the present application is shown. DETAILED DESCRIPTION
[0032] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are described in detail below with reference to the accompanying drawings.
[0033] In the following description, many specific details are set forth to facilitate a full understanding of the present application. However, the present application may also be implemented in other ways different from those described herein. Those skilled in the art may make similar generalizations without violating the connotation of the present application. Therefore, the present application is not limited to the specific embodiments disclosed below.
[0034] Secondly, this application is described in detail with reference to schematic diagrams. When describing the embodiments of this application, for ease of explanation, cross-sectional views of device structures may be partially enlarged and not to scale. Furthermore, these schematic diagrams are merely illustrative and should not limit the scope of protection of this application. Furthermore, in actual production, three-dimensional dimensions, including length, width, and depth, should be included.
[0035] As described in the background, the microwave ignition process is essentially an exothermic one. As the temperature rises, ion reactions and recombination reach a new equilibrium, causing the higher-energy ions to scatter. This forms a dense oxide on the ceramic surface, reducing reactivity, thereby affecting the plasma concentration in the chamber and lowering the etching rate. Therefore, temperature control has become a pressing technical challenge.
[0036] Based on the above technical problems, the present invention provides an upper cavity cover and semiconductor processing equipment. The upper cavity cover and semiconductor processing equipment include an upper cavity cover, a shell reaction chamber disposed within the upper cavity cover, a first conduit disposed on a first side surface, and a microwave window. The upper cavity cover includes a first side surface and a second side surface, with the shell reaction chamber adjacent to the first side surface. The shell reaction chamber is used to generate plasma. The first conduit is used to flow a coolant to cool the shell reaction chamber. The microwave window is used to transmit microwave signals to the shell reaction chamber. The first conduit surrounds at least three sides of the microwave window. As can be seen, by arranging the first conduit around three sides of the microwave window, the area of the first conduit is maximized, thereby allowing the coolant to more fully cool the shell reaction chamber. The cooling area is greatly increased, thereby reducing the temperature of the shell reaction chamber, ensuring that the temperature of the shell reaction chamber does not rise with the ignition discharge and remains stable. This stabilizes the etching rate, prevents the etching rate from decreasing, and ensures that the etching results meet process requirements. No additional complex temperature control equipment is required, thereby reducing process costs.
[0037] For ease of understanding, an upper cavity cover and a semiconductor processing device provided in an embodiment of the present application are described in detail below with reference to the accompanying drawings.
[0038] refer to Figure 1 As shown, it is a cross-sectional schematic diagram of an upper cavity cover provided in an embodiment of the present application, including an upper cavity cover 100, a shell reaction cavity 101 arranged inside the upper cavity cover 100, a first pipeline 102 and a microwave window 103 arranged on the first side surface.
[0039] Specifically, the upper chamber cover plate 100 includes a first side surface and a second side surface. The shell reaction chamber 101 is close to the first side surface, that is, compared with the second side surface, the shell reaction chamber 101 is closer to the first side surface. As an example, the first side surface can be the upper surface of the upper chamber cover plate 100, and the second side surface can be the lower surface of the upper chamber cover plate 100. The shell reaction chamber 101 can be used to generate plasma, and the plasma can be used in the subsequent etching process. Figure 1 In FIG, the shell reaction chamber 101 is the portion shown by the dotted line frame.
[0040] Specifically, a first conduit 102 may be provided on the first side surface. The first conduit 102 is configured to allow a coolant to flow, thereby cooling the shell reaction chamber 101. In other words, the coolant may be transported in the first conduit 102, and the coolant may transfer temperature to the shell reaction chamber 101, thereby lowering the temperature within the shell reaction chamber 101. By way of example, the coolant may be water or other liquids.
[0041] Specifically, a microwave window 103 is also provided on the first side surface, and the microwave window 103 is used to transmit the received microwave signal downward, that is, to transmit the microwave signal to the shell reaction cavity 101. Figure 1 In the cross-sectional view, since the first pipeline 102 will block the microwave window 103 to a certain extent, the lower half of the microwave window 103 is shown in dotted lines. Figure 1 Also shown is an accessory 104, so that the coolant in the first pipeline 102 can transfer a portion of the low temperature to the accessory 104, and the accessory 104 then transfers it to the shell reaction chamber 101. In addition, to ensure the sealing degree of the microwave window 103, a sealing ring (Window O-ring) can be provided between the microwave window 103 and the upper cavity cover 100 to prevent vacuum leakage. A flange (Light-emitting chamber flange) can also be provided in the microwave window 103. The flange is one of the hardware components for forming the plasma. A diffuser plate can also be provided on the second side surface of the upper cavity cover 100 to facilitate uniform diffusion of the plasma into the chamber.
[0042] The first pipeline 102 can surround at least three sides of the microwave window 103. In other words, the first pipeline 102 has a relatively long path and can surround the microwave window 103 on three sides. Thus, without changing the structure of the original upper cavity cover 100, the path and area occupied by the first pipeline 102 can be set as much as possible, and the flow rate of the coolant can be as large as possible, which can expand the cooling range of the shell reaction chamber 101 and reduce the temperature. Figure 2, which is a top view of an upper cavity cover 100 provided in an embodiment of the present application, the first pipe 102 surrounds three sides of the microwave window 103 , namely the upper side, the lower side and the right side.
[0043] In this way, by arranging the first pipeline 102 around three sides of the microwave window 103, the area of the first pipeline 102 is increased as much as possible, so that the coolant can cool the shell reaction chamber 101 more fully. The cooling area is greatly increased, thereby reducing the temperature of the shell reaction chamber 101, so that the temperature of the shell reaction chamber 101 does not rise with the ignition discharge and is stable, thereby stabilizing the etching rate and avoiding a decrease in the etching rate, ensuring that the etching results meet the process requirements, and no additional complex temperature control equipment is required, thereby reducing the process cost.
[0044] In a possible implementation, the first pipeline 102 may be a U-shaped structure, such as Figure 2 The shape of the first conduit 102 is shown. Of course, the shape of the first conduit 102 is not specifically limited here and can be other structures as long as it can surround the microwave window 103 on three sides. In addition, the first conduit 102 can include only one conduit or multiple conduits, and the multiple conduits are interconnected.
[0045] In one possible implementation, in order to further increase the cooling range, the first pipe 102 can be arranged to surround the four sides of the microwave window 103. In this way, the area on the first side surface can be fully utilized, the flow path of the coolant can be further increased, the cooling range can be increased, the temperature of the shell reaction chamber 101 can be reduced, and the etching rate can be stabilized. Figure 3 , which is a top view of another upper cavity cover 100 provided in an embodiment of the present application, the first pipe 102 surrounds the four sides of the microwave window 103 .
[0046] In a possible implementation, the system may further include a supplementary cover plate 105 located on the first side surface of the upper cavity cover plate 100 , wherein the supplementary cover plate 105 has a groove 1051 , and the first pipeline 102 is located inside the groove 1051 .
[0047] Specifically, the supplementary cover 105 can be placed on the first side surface of the upper cavity cover 100. A groove 1051 is provided on the side surface of the supplementary cover 105 close to the upper cavity cover 100, so that the first pipeline 102 can be embedded in it, surrounding the surface of the first pipeline 102, preventing the surface of the first pipeline 102 from being exposed to the air, and allowing the low temperature to be transmitted to the air.
[0048] refer to Figure 4 FIG. 1 is a cross-sectional view of another upper cavity cover plate 100 provided in an embodiment of the present application, wherein the supplementary cover plate 105 can enclose the first pipeline 102 therein. Figure 5 , which is a cross-sectional schematic diagram of a supplementary cover plate 105 provided in an embodiment of the present application, including a groove 1051 .
[0049] In this way, by adding a supplementary cover plate 105, the supplementary cover plate 105 can form a closed groove 1051 with the upper cavity cover plate 100, and the first pipeline 102 is located in this closed space, that is, the thickness of the overall cover plate is increased, so that the first pipeline 102 is completely embedded in the interior of the cover plate, realizing four-sided embedded cooling, thereby ensuring that the low temperature of the coolant in the first pipeline 102 can be transferred more to the shell reaction chamber 101, avoiding loss caused by transfer to the air, and realizing maximum utilization of the low temperature, which can accelerate the temperature drop rate in the shell reaction chamber 101 and improve the cooling effect.
[0050] In a possible implementation, a second pipe 106 may be further included on the first side surface. The second pipe 106 surrounds the first pipe 102, that is, the second pipe 106 is located outside the first pipe 102. The second pipe 106 can be used to cool the entire chamber. Figure 6 FIG. 1 is a cross-sectional view of another upper cavity cover plate 100 provided in an embodiment of the present application, showing a second pipeline 106, referring to FIG. Figure 7 , which is a top view of another upper cavity cover plate 100 provided in an embodiment of the present application, the second pipeline 106 can surround the first pipeline 102 .
[0051] In one possible implementation, the first pipeline 102 and the second pipeline 106 can be connected through an intermediate pipeline 107. The intermediate pipeline 107 is used to connect the two pipelines so that the coolant can flow between the two pipelines, simplifying the water channel structure of the upper cavity cover 100.
[0052] In one possible implementation, the first end of the second pipeline 106 is connected to the coolant supply pipeline 108, the second end of the second pipeline 106 is connected to the first end of the intermediate pipeline 107, the second end of the intermediate pipeline 107 is connected to the first end of the first pipeline 102, and the second end of the first pipeline 102 is connected to the coolant outflow pipeline 109.
[0053] That is, the coolant supply line 108 is used to supply the coolant, and the coolant outflow line 109 is used to discharge the coolant. Figure 8The figure shows a top view of another upper chamber cover plate 100 provided in an embodiment of the present application. The arrow in the figure indicates the flow direction of the coolant. The coolant flows from the coolant supply line 108, enters the first end of the second line 106, flows out through the second end of the second line 106 and enters the first end of the intermediate line 107. It then flows out from the second end of the intermediate line 107 and enters the first end of the first line 102. The coolant continues to flow in the first line 102 and flows through the second end of the first line 102 to the coolant outflow line 109, thereby cooling the entire chamber and the shell reaction chamber 101. In this way, the water path can be simplified, and there is no need to set up multiple coolant supply lines 108, which reduces process costs.
[0054] In one possible implementation, the diameter of the second pipeline 106 may be smaller than that of the first pipeline 102 , that is, the diameter of the first pipeline 102 is larger and the first pipeline 102 is thicker, thereby increasing the flow rate of the coolant and improving the cooling effect on the shell reaction chamber 101 .
[0055] In one possible implementation, the upper cavity cover 100 may have a groove, and the second pipeline 106 is located inside the groove, that is, a circle of shallower grooves is set on the upper cavity cover 100, and the second pipeline 106 is placed in the groove to improve the cooling effect of the second pipeline 106 on the entire chamber.
[0056] The present application provides an upper cavity cover plate, comprising an upper cavity cover plate, a shell reaction chamber disposed within the upper cavity cover plate, a first conduit disposed on a first side surface, and a microwave window. The upper cavity cover plate includes a first side surface and a second side surface, the shell reaction chamber being adjacent to the first side surface. The shell reaction chamber is configured to generate plasma. The first conduit is configured to allow coolant to flow to cool the shell reaction chamber. The microwave window is configured to transmit microwave signals to the shell reaction chamber. The first conduit surrounds at least three sides of the microwave window. As can be seen, by arranging the first conduit around three sides of the microwave window, the area of the first conduit is maximized, thereby enabling the coolant to more fully cool the shell reaction chamber. The cooling area is greatly increased, thereby lowering the temperature of the shell reaction chamber, ensuring that the temperature of the shell reaction chamber does not rise with the ignition discharge and remains stable. This stabilizes the etching rate, prevents a decrease in the etching rate, and ensures that the etching results meet process requirements. Furthermore, no additional complex temperature control equipment is required, thereby reducing process costs.
[0057] Based on the upper cavity cover provided in the above embodiment, the present application embodiment also provides a semiconductor processing device, referring to Figure 9 , which is a schematic diagram of a semiconductor processing device provided by an embodiment of the present application, includes a cavity 200 and an upper cavity cover 100 , thereby constituting the entire chamber.
[0058] The present embodiment provides a semiconductor processing device, comprising an upper cavity cover and a cavity. As can be seen, by arranging the first conduit around three sides of the microwave window, the area of the first conduit is maximized, allowing the coolant to more fully cool the shell reaction cavity. The cooling area is greatly increased, thereby reducing the temperature of the shell reaction cavity, ensuring that the temperature of the shell reaction cavity does not rise with the ignition discharge and remains stable. This stabilizes the etching rate, avoids a decrease in the etching rate, ensures that the etching results meet process requirements, and eliminates the need for additional complex temperature control equipment, thereby reducing process costs.
[0059] The various embodiments in this specification are described in a progressive manner. Similar portions between the various embodiments can be referenced to each other. Each embodiment focuses on the differences from the other embodiments. In particular, the semiconductor processing equipment embodiment is generally similar to the upper chamber cover embodiment, so its description is relatively simple. For relevant details, refer to the upper chamber cover embodiment.
[0060] The above is only a preferred embodiment of the present application. Although the present application has been disclosed as a preferred embodiment, it is not intended to limit the present application. Any technician familiar with the art can use the above-disclosed methods and technical contents to make many possible changes and modifications to the technical solution of the present application without departing from the scope of the technical solution of the present application, or modify it into an equivalent embodiment with equivalent changes. Therefore, any simple modifications, equivalent changes and modifications made to the above embodiments based on the technical essence of the present application without departing from the content of the technical solution of the present application are still within the scope of protection of the technical solution of the present application.
Claims
1. An upper cavity cover plate, characterized in that: include: an upper cavity cover plate, and a shell reaction chamber disposed inside the upper cavity cover plate; the upper cavity cover plate comprises a first side surface and a second side surface, and the shell reaction chamber is close to the first side surface; The shell reaction chamber is used to generate plasma; a first pipeline disposed on the first side surface; The first pipeline is used to allow the coolant to flow so as to cool the shell reaction chamber; a microwave window provided on the first side surface, for transmitting microwave signals to the shell reaction cavity; The first pipe surrounds at least three sides of the microwave window.
2. The upper cavity cover according to claim 1, characterized in that: The first pipeline is a U-shaped structure.
3. The upper cavity cover according to claim 1, characterized in that: The first pipe surrounds four sides of the microwave window.
4. The upper cavity cover according to claim 1, characterized in that: Also includes: A supplementary cover plate is located on the first side surface of the upper cavity cover plate; the supplementary cover plate has a groove, and the first pipeline is located inside the groove.
5. The upper cavity cover according to claim 1, characterized in that: Also includes: A second pipe is located on the first side surface, and the second pipe surrounds the first pipe.
6. The upper cavity cover according to claim 5, characterized in that: The first pipeline is communicated with the second pipeline through an intermediate pipeline.
7. The upper cavity cover according to claim 6, characterized in that: The first end of the second pipeline is connected to the coolant supply pipeline, the second end of the second pipeline is connected to the first end of the intermediate pipeline, the second end of the intermediate pipeline is connected to the first end of the first pipeline, and the second end of the first pipeline is connected to the coolant outflow pipeline.
8. The upper cavity cover according to claim 5, characterized in that: The diameter of the second pipeline is smaller than that of the first pipeline.
9. The upper cavity cover according to claim 5, characterized in that: The upper cavity cover plate has a groove, and the second pipeline is located inside the groove.
10. A semiconductor processing device, characterized in that: include: A cavity, and an upper cavity cover according to any one of claims 1 to 9.