Dual-track plasma loudspeaker

Abstract

The utility model relates to a loudspeaker, in particular to a dual-track plasma loudspeaker. By using the high-power high-voltage transformer, the loudspeaker has a longer discharge distance and two sound channels, thereby effectively solving the problems that a single sound channel cannot play stereophonic sound and the volume is relatively low. Comprising a host; according to the host, a cooling fin serves as a first base, a circuit mainboard is located over the first base, and four first copper columns are adopted for supporting connection between the first base and the circuit mainboard and supporting connection between the circuit mainboard and a square acrylic plate above the circuit mainboard respectively; the two sides of the host are respectively provided with a sounding unit, and the host is connected with the sounding units through wires. And the sounding unit takes a circular acrylic plate as a second base, the high-voltage transformer is fixed on the second base, and the second base and the top support plate are supported and connected by four nylon columns.

Description

Technical Field

[0001] The utility model relates to a loudspeaker, in particular to a dual-channel plasma loudspeaker. Background Art

[0002] Plasma speakers are a new type of device that uses high-voltage plasma arcs to drive air vibrations to produce sound. Compared to traditional diaphragm speakers, they have higher sound quality fidelity. Currently, this technology is mainly used in tweeters of high-end audio systems, laboratory research, and the circle of electronic enthusiasts because this technology is not yet fully mature.

[0003] There are currently two common approaches to implementing plasma speakers: one uses a single MOSFET coupled with zero-voltage switching (ZVS) to drive a high-voltage transformer; the other uses pulse-width modulation (PWM) power regulation combined with a bridge inverter to drive the high-voltage transformer. In the former, the MOSFET's performance directly determines the device's maximum output power. However, during operation, the MOSFET generates significant heat, increasing the risk of thermal breakdown and shortening its lifespan. While the latter approach addresses the issues of inefficiency and overheating, domestic applications typically require the use of a driver chip and gate drive transformer to drive a half-bridge or full-bridge circuit. This design complicates the PCB layout and is relatively bulky. It also introduces electromagnetic interference and is prone to generating additional noise.

[0004] In addition, existing plasma speaker products generally only support a single channel and have a low volume, which are limitations in current technological development. Summary of the Invention

[0005] The present invention aims to solve the defects in the prior art and provides a dual-channel plasma speaker, which can solve the defects mentioned in the background art.

[0006] To achieve the above objectives, the present invention adopts the following technical solution: a two-channel plasma speaker, comprising a main unit; the main unit has a heat sink as a first base, a circuit board is located directly above the first base, and the first base and the circuit board, as well as the circuit board and the square acrylic plate above it, are supported and connected by four first copper columns; a sound unit is provided on each side of the main unit, and the main unit and the sound unit are connected by wires; the sound unit has a circular acrylic plate as a second base, a high-voltage transformer is fixed to the second base, and the second base is supported and connected to the top support plate by four nylon columns.

[0007] Furthermore, four anti-slip rubber pads are provided at the bottom of the circular acrylic plate, and the high-voltage transformer is fixed to the circular acrylic plate with strong glue; a socket and two second copper pillars are installed on the top support plate, and the ends of the second copper pillars are connected to the high-voltage electrodes.

[0008] Furthermore, the top support plate is made of insulating material.

[0009] Furthermore, the circuit of the circuit main board includes a power protection module, a step-down module, a Bluetooth audio module, a signal generating module, and a half-bridge drive output module; the power protection module is connected to the step-down module and the half-bridge drive output module, the step-down module is respectively connected to the Bluetooth audio module, the signal generating module and the half-bridge drive output module, the Bluetooth audio module is connected to the signal generating module, and the signal generating module is connected to the half-bridge drive output module.

[0010] Furthermore, the power protection module includes a power interface CN1, a fuse F1, a diode D8, and a capacitor C17. The diode D8 adopts S10MC and the capacitor C17 adopts a 1000uF electrolytic capacitor. The power interface CN1 is connected to the positive pole of the electrolytic capacitor C17 through the fuse F1; the positive pole of the electrolytic capacitor C17 is connected to VCC and is connected to the step-down module and the half-bridge drive output module. The negative pole of the electrolytic capacitor C17 is grounded, and the diode D8 is connected to the electrolytic capacitor C17 in reverse parallel.

[0011] Furthermore, the step-down module includes voltage regulator chips U22 and U19, capacitors C19, C23, C27, C28, and C29. The voltage regulator chip U22 uses LM7812, U19 uses LM7805, C27 uses a 470uF electrolytic capacitor, C19 and C29 use 220uF electrolytic capacitors, C23 and C28 use 104 chip capacitors, pin 1 of the voltage regulator chip U22 is connected to VCC, pin 2 is grounded, and pin 3 is a +12V output, pin 1 of the voltage regulator chip U19 is connected to pin 3 of the voltage regulator chip U22, pin 2 of the voltage regulator chip U19 is grounded, and pin 3 is a +5V output, and capacitors C19, C23, C27, C28, and C29 are all used for filtering.

[0012] Furthermore, the Bluetooth audio module includes a Bluetooth audio module U7, an inductor L1, capacitors C5 and C10. The Bluetooth audio module adopts MH-M18, the inductor L1 adopts a 100uH chip inductor, C5 adopts a 104 chip capacitor, and C10 adopts a 106 chip capacitor. Pin 4 of the Bluetooth audio module U7 is connected to one end of the inductor L1, and the other end of the inductor L1 is connected to +5V. Pin 3 of the Bluetooth audio module U7 is grounded. C5 and C10 are connected in parallel between pins 4 and 3 of the Bluetooth audio module U7, and together with L1, they play a filtering role. Pins 1 and 2 of the Bluetooth audio module U7 are for the right and left channel audio signal outputs, which are connected to the signal generating module.

[0013] Furthermore, the signal generating module includes a TL494 chip U7, potentiometers R7 and R8, capacitors C8, C9, C14, and C15. Potentiometer R7 uses a 50k multi-turn potentiometer, potentiometer R8 uses a 10k multi-turn potentiometer, capacitor C8 uses a 106 chip capacitor, C9 uses a 102 chip capacitor, and C14 and C15 use 104 chip capacitors. The TL494 chip is used to generate a square wave with adjustable frequency and duty cycle. Pin 4 of the TL494 chip is connected to the sliding end of the potentiometer R8 and one end of the capacitor C8. The other end of the capacitor C8 is the audio signal input, which is connected to the audio signal output of the Bluetooth audio module. The potentiometer Device R8 adjusts the duty cycle of the square wave output by the TL494 chip. Pin 5 of the TL494 chip is grounded through capacitor C9, and pin 6 is grounded through a 2k resistor R13 and potentiometer R7. C9 and R7 jointly adjust the frequency of the square wave output by the TL494 chip. Pins 1, 16, and 7 of the TL494 chip are grounded. Pins 2, 13, 14, and 15 of the TL494 chip are connected to a fixed end of the potentiometer R8, and the other fixed end of R8 is grounded. Pins 8, 11, and 12 of the TL494 chip are connected to +5V. Pins 9 and 10 of the TL494 chip are output terminals, outputting two square waves with the same frequency and duty cycle but inverse phase.

[0014] Furthermore, the half-bridge driver output module includes an IR10S chip U26, an IRFP4110 MOS tube Q1 and a MOS tube Q2, a 2.2uF CBB capacitors U23 and U24, SS24 Schottky diode D4, IN4148 fast recovery diodes U22 and U25, output interface CN2, IR2110S chip amplifies the input signal to drive the half-bridge MOS tube, IR10S chip U26's 11th pin is connected to +5V, IR10S chip U26's 13th pin, 15th pin, 2nd pin is grounded, IR10S chip U26's 12th pin and 14th pin are signal input terminals, connected to the two output terminals of the signal generation module, IR10S chip U26's 3rd pin is connected to +12V, IR10S chip U26's 6th and 7th pins are connected to a bootstrap capacitor, the bootstrap capacitor uses a 105 chip capacitor, IR10S chip U26's 7th pin is connected to the cathode of diode D4, IR10S chip U26's 3rd pin is connected to the anode of diode D4, IR10S chip U26's 3rd and 2nd pins are connected to 10 4 chip capacitors, a coupling capacitor is connected between pins 11 and 15 of the IR10S chip U26. The coupling capacitor uses a 104 chip capacitor. Pin 8 of the IR10S chip U26 is the HO high-end MOS drive output, connected to the G pole of the MOS tube Q1 through the 10R gate resistor R24, and a fast recovery diode U25 is connected in reverse parallel at both ends of the R24 resistor. Pin 1 of the IR10S chip U26 is the LO low-end MOS drive output, connected to the G pole of the MOS tube Q2 through the 10R gate resistor R21, and a fast recovery diode U22 is connected in reverse parallel at both ends of the R21 resistor. U21 and U25 can speed up the shutdown of the MOS tube. The D pole of the MOS tube Q1 is connected to VCC, and the S pole of the MOS tube Q2 is grounded. Q1, Q2, U24, and U23 form a half-bridge structure, which is output through the interface CN2 to convert the VCC DC power into AC power for driving the high-voltage transformer.

[0015] Compared with the prior art, the utility model has beneficial effects.

[0016] The utility model has a longer discharge distance and two sound channels by using a high-power high-voltage transformer, thereby effectively solving the problem that a mono channel cannot play stereo sound and has a low volume.

[0017] This new device separates the high-voltage section from the control circuit, enhancing insulation and reducing electromagnetic interference. Furthermore, the new circuit solution achieves high integration and miniaturization by integrating power protection, voltage reduction, Bluetooth audio reception, signal processing, and power amplification modules. Power protection and efficient voltage regulation ensure system stability and reliability, while the high-quality Bluetooth audio module enhances ease of use and sound quality. The core TL494 chip combined with the IR2110S driver module provides precise signal processing and efficient power output, ensuring excellent audio performance. The overall design optimizes energy management and provides users with a better listening experience. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The present invention will be further described below with reference to the accompanying drawings and specific embodiments. The scope of protection of the present invention is not limited to the following description.

[0019] Figure 1 It is the overall structure diagram of the utility model.

[0020] Figure 2 This is a rear view of the sound unit of the present invention.

[0021] Figure 3 It is a principle block diagram of the circuit mainboard of the utility model.

[0022] Figure 4 This is the circuit diagram of the power protection module of the utility model.

[0023] Figure 5 This is the circuit diagram of the step-down module of the utility model.

[0024] Figure 6 This is the circuit diagram of the Bluetooth audio module of this utility model.

[0025] Figure 7 This is a circuit diagram of a signal generating module of the utility model.

[0026] Figure 8 This is the circuit diagram of the half-bridge drive output module of the utility model.

[0027] In the picture, 1. heat sink; 2. circuit board; 3. square acrylic board; 4. copper column; 5. wire; 6. round acrylic board; 7. high-voltage transformer; 8. socket; 9. high-voltage electrode; 10. top support plate; 11. nylon column; 18. non-slip rubber foot pad. DETAILED DESCRIPTION

[0028] In order to make the purpose, technical solution and beneficial effects of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention will be clearly and completely described below in combination with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments.

[0029] like Figure 1-2 As shown, an embodiment of a two-channel plasma speaker includes a main unit; the main unit uses a heat sink 1 as a first base, a circuit main board 2 is located directly above the first base, and four first copper columns are used to support and connect the first base and the circuit main board 2, and the circuit main board 2 and the square acrylic plate 3 above it. A sound unit is provided on each side of the main unit, and the main unit and the sound unit are connected by a wire 5; the sound unit uses a circular acrylic plate 6 as a second base, a high-voltage transformer 7 is fixed to the second base, and the second base and the top support plate 10 are supported and connected by four nylon columns 11.

[0030] Preferably, four non-slip rubber pads 18 are provided at the bottom of the circular acrylic plate 6, and the high-voltage transformer 7 is fixed to the circular acrylic plate 6 with strong glue; a socket 8 and two second copper pillars are installed on the top support plate 10, and the ends of the second copper pillars are connected to the high-voltage electrode 9. The top support plate 10 can be made of insulating material.

[0031] The process of using this utility model is as follows: connect the left and right sound units to the host socket 8 via wires 5, plug the power cord into the host socket 8, and connect the other end of the power cord to a 30V DC power supply. At this time, the blue indicator light on the Bluetooth audio module 17 lights up, and the high-voltage electrode 9 generates an arc. Turn on the Bluetooth of a mobile terminal device such as a mobile phone, search for the device named MH-M8, and pair it. When playing music, the thickness of the arc changes with the music, thereby driving the air to vibrate and produce sound.

[0032] Preferably, if Figure 3 As shown, the circuit of the circuit main board 2 includes a power protection module, a step-down module, a Bluetooth audio module, a signal generating module, and a half-bridge drive output module; the power protection module is connected to the step-down module and the half-bridge drive output module, the step-down module is respectively connected to the Bluetooth audio module, the signal generating module and the half-bridge drive output module, the Bluetooth audio module is connected to the signal generating module, and the signal generating module is connected to the half-bridge drive output module.

[0033] Preferably, if Figure 4As shown, the power protection module includes a power interface CN1, a fuse F1, a diode D8, and a capacitor C17. The diode D8 adopts S10MC and the capacitor C17 adopts a 1000uF electrolytic capacitor. The power interface CN1 is connected to the positive electrode of the electrolytic capacitor C17 through the fuse F1; the positive electrode of the electrolytic capacitor C17 is connected to VCC and is connected to the step-down module and the half-bridge drive output module. The negative electrode of the electrolytic capacitor C17 is grounded, and the diode D8 is connected in reverse parallel to the electrolytic capacitor C17.

[0034] Preferably, if Figure 5 As shown, the step-down module includes voltage regulator chips U22 and U19, capacitors C19, C23, C27, C28, and C29. The voltage regulator chip U22 adopts LM7812, U19 adopts LM7805, C27 adopts 470uF electrolytic capacitor, C19 and C29 adopt 220uF electrolytic capacitor, C23 and C28 adopt 104 chip capacitors, pin 1 of the voltage regulator chip U22 is connected to VCC, pin 2 is grounded, and pin 3 is +12V output, pin 1 of the voltage regulator chip U19 is connected to pin 3 of the voltage regulator chip U22, pin 2 of the voltage regulator chip U19 is grounded, and pin 3 is +5V output, and capacitors C19, C23, C27, C28, and C29 are all used for filtering.

[0035] Preferably, if Figure 6 As shown, the Bluetooth audio module includes a Bluetooth audio module U7, an inductor L1, capacitors C5 and C10. The Bluetooth audio module adopts MH-M18, the inductor L1 adopts a 100uH chip inductor, C5 adopts a 104 chip capacitor, and C10 adopts a 106 chip capacitor. Pin 4 of the Bluetooth audio module U7 is connected to one end of the inductor L1, and the other end of the inductor L1 is connected to +5V. Pin 3 of the Bluetooth audio module U7 is grounded. C5 and C10 are connected in parallel between pins 4 and 3 of the Bluetooth audio module U7, and together with L1, they play a filtering role. Pins 1 and 2 of the Bluetooth audio module U7 are for right and left channel audio signal outputs, which are connected to the signal generating module.

[0036] Preferably, if Figure 7As shown, the signal generating module includes a TL494 chip U7, potentiometers R7 and R8, capacitors C8, C9, C14, and C15. Potentiometer R7 uses a 50k multi-turn potentiometer, potentiometer R8 uses a 10k multi-turn potentiometer, capacitor C8 uses a 106 chip capacitor, C9 uses a 102 chip capacitor, and C14 and C15 use 104 chip capacitors. The TL494 chip is used to generate a square wave with adjustable frequency and duty cycle. Pin 4 of the TL494 chip is connected to the sliding end of the potentiometer R8 and one end of the capacitor C8. The other end of the capacitor C8 is the audio signal input, which is connected to the audio signal output of the Bluetooth audio module. The potentiometer R8 adjusts the duty cycle of the square wave output by the TL494 chip. Pin 5 of the TL494 chip is grounded through capacitor C9, and pin 6 is grounded through a 2k resistor R13 and potentiometer R7. C9 and R7 jointly adjust the frequency of the square wave output by the TL494 chip. Pins 1, 16, and 7 of the TL494 chip are grounded. Pins 2, 13, 14, and 15 of the TL494 chip are connected to a fixed end of the potentiometer R8, and the other fixed end of R8 is grounded. Pins 8, 11, and 12 of the TL494 chip are connected to +5V. Pins 9 and 10 of the TL494 chip are output terminals, outputting two square waves with the same frequency and duty cycle but inverse phase.

[0037] Preferably, if Figure 8As shown, the half-bridge driver output module includes IR10S chip U26, IRFP4110 MOS tube Q1 and MOS tube Q2, 2.2uF CBB capacitors U23 and U24, SS24 Schottky diode D4, IN4148 fast recovery diodes U22 and U25, output interface CN2, IR2110S chip amplifies the input signal to drive the half-bridge MOS tube, IR10S chip U26's 11th pin is connected to +5V, IR10S chip U26's 13th pin, 15th pin, 2nd pin is grounded, IR10S chip U26's 12th pin and 14th pin are signal input terminals, connected to the two output terminals of the signal generation module, IR10S chip U26's 3rd pin is connected to +12V, IR10S chip U26's 6th and 7th pins are connected to a bootstrap capacitor, the bootstrap capacitor uses a 105 chip capacitor, IR10S chip U26's 7th pin is connected to the cathode of diode D4, IR10S chip U26's 3rd pin is connected to the anode of diode D4, IR10S chip U26's 3rd and 2nd pins are connected to 10 4 chip capacitors, a coupling capacitor is connected between pins 11 and 15 of the IR10S chip U26. The coupling capacitor uses a 104 chip capacitor. Pin 8 of the IR10S chip U26 is the HO high-end MOS drive output, connected to the G pole of the MOS tube Q1 through the 10R gate resistor R24, and a fast recovery diode U25 is connected in reverse parallel at both ends of the R24 resistor. Pin 1 of the IR10S chip U26 is the LO low-end MOS drive output, connected to the G pole of the MOS tube Q2 through the 10R gate resistor R21, and a fast recovery diode U22 is connected in reverse parallel at both ends of the R21 resistor. U21 and U25 can speed up the shutdown of the MOS tube. The D pole of the MOS tube Q1 is connected to VCC, and the S pole of the MOS tube Q2 is grounded. Q1, Q2, U24, and U23 form a half-bridge structure, which is output through the interface CN2 to convert the VCC DC power into AC power for driving the high-voltage transformer.

[0038] The working principle of the present invention is as follows: after power is turned on and the terminal device is connected, the Bluetooth audio module 17 receives the audio signal of the mobile phone and transmits it to the driving circuit. The TL494 chip audio signal is converted into a PWM wave whose duty cycle changes with the music. The PWM wave drives the power half-bridge via the IR2110 driver chip, and finally drives the high-voltage transformer 7 to generate high voltage electricity, generating an arc on the high-voltage electrode 9. When the PWM wave duty cycle increases, the power of the high-voltage transformer 7 increases and the output arc becomes thicker; when the PWM wave duty cycle decreases, the power of the high-voltage transformer 7 decreases and the output arc becomes thinner. The PWM wave duty cycle changes continuously with the music, which will cause the power of the high-voltage transformer 7 to change continuously, and then the thickness of the arc changes continuously with the music, thereby driving the air to vibrate and produce music.

[0039] The above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the above embodiments, it should be understood by those skilled in the art that the technical solutions described in the above embodiments can still be modified, or some or all of the technical features therein can be replaced by equivalents. Therefore, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope defined by the claims of the present invention.

Claims

1. A dual-channel plasma speaker, comprising a main unit; characterized in that: The host has a heat sink (1) as a first base, a circuit mainboard (2) is located directly above the first base, and four first copper columns are used to support and connect the first base and the circuit mainboard (2), and the circuit mainboard (2) and the square acrylic plate (3) above it. A sound unit is provided on each side of the main unit, and the main unit and the sound unit are connected by a wire (5); the sound unit uses a circular acrylic plate (6) as a second base, a high-voltage transformer (7) is fixed on the second base, and four nylon columns (11) are used to support and connect the second base and the top support plate (10).

2. The dual-channel plasma speaker according to claim 1, characterized in that: Four anti-skid rubber pads (18) are provided at the bottom of the circular acrylic plate (6), and the high-voltage transformer (7) is fixed to the circular acrylic plate (6) using strong glue; a socket (8) and two second copper pillars are installed on the top support plate (10), and the ends of the second copper pillars are connected to the high-voltage electrodes (9).

3. The dual-channel plasma speaker according to claim 2, characterized in that: The top support plate (10) is made of insulating material.

4. The dual-channel plasma speaker according to claim 1, characterized in that: The circuit of the circuit main board (2) includes a power protection module, a step-down module, a Bluetooth audio module, a signal generation module, and a half-bridge drive output module; the power protection module is connected to the step-down module and the half-bridge drive output module, the step-down module is respectively connected to the Bluetooth audio module, the signal generation module, and the half-bridge drive output module, the Bluetooth audio module is connected to the signal generation module, and the signal generation module is connected to the half-bridge drive output module.

5. The dual-channel plasma speaker according to claim 4, characterized in that: The power protection module includes a power interface CN1, a fuse F1, a diode D8, and a capacitor C17. The diode D8 adopts S10MC and the capacitor C17 adopts a 1000uF electrolytic capacitor. The power interface CN1 is connected to the positive electrode of the electrolytic capacitor C17 through the fuse F1; the positive electrode of the electrolytic capacitor C17 is connected to VCC and is connected to the step-down module and the half-bridge drive output module. The negative electrode of the electrolytic capacitor C17 is grounded, and the diode D8 is connected to the electrolytic capacitor C17 in reverse parallel.

6. The dual-channel plasma speaker according to claim 4, characterized in that: The step-down module includes voltage regulator chips U22 and U19, capacitors C19, C23, C27, C28, and C29. The voltage regulator chip U22 uses LM7812, U19 uses LM7805, C27 uses a 470uF electrolytic capacitor, C19 and C29 use 220uF electrolytic capacitors, C23 and C28 use 104 chip capacitors, pin 1 of the voltage regulator chip U22 is connected to VCC, pin 2 is grounded, and pin 3 is a +12V output, pin 1 of the voltage regulator chip U19 is connected to pin 3 of the voltage regulator chip U22, pin 2 of the voltage regulator chip U19 is grounded, and pin 3 is a +5V output, and capacitors C19, C23, C27, C28, and C29 are all used for filtering.

7. The dual-channel plasma speaker according to claim 4, characterized in that: The Bluetooth audio module includes a Bluetooth audio module U7, an inductor L1, capacitors C5 and C10. The Bluetooth audio module adopts MH-M18, the inductor L1 adopts a 100uH chip inductor, C5 adopts a 104 chip capacitor, and C10 adopts a 106 chip capacitor. Pin 4 of the Bluetooth audio module U7 is connected to one end of the inductor L1, and the other end of the inductor L1 is connected to +5V. Pin 3 of the Bluetooth audio module U7 is grounded. C5 and C10 are connected in parallel between pins 4 and 3 of the Bluetooth audio module U7, and together with L1, they play a filtering role. Pins 1 and 2 of the Bluetooth audio module U7 are for right and left channel audio signal outputs, which are connected to the signal generating module.

8. The dual-channel plasma speaker according to claim 4, characterized in that: The signal generating module includes a TL494 chip U7, potentiometers R7 and R8, capacitors C8, C9, C14, and C15. Potentiometer R7 uses a 50k multi-turn potentiometer, potentiometer R8 uses a 10k multi-turn potentiometer, capacitor C8 uses a 106 chip capacitor, C9 uses a 102 chip capacitor, and C14 and C15 use 104 chip capacitors. The TL494 chip is used to generate a square wave with adjustable frequency and duty cycle. Pin 4 of the TL494 chip is connected to the sliding end of potentiometer R8 and one end of capacitor C8. The other end of capacitor C8 is the audio signal input, which is connected to the audio signal output of the Bluetooth audio module. Potentiometer R 8 adjusts the duty cycle of the square wave output by the TL494 chip. Pin 5 of the TL494 chip is grounded through capacitor C9, and pin 6 is grounded through a 2k resistor R13 and potentiometer R7. C9 and R7 jointly adjust the frequency of the square wave output by the TL494 chip. Pins 1, 16, and 7 of the TL494 chip are grounded. Pins 2, 13, 14, and 15 of the TL494 chip are connected to a fixed end of the potentiometer R8, and the other fixed end of R8 is grounded. Pins 8, 11, and 12 of the TL494 chip are connected to +5V. Pins 9 and 10 of the TL494 chip are output terminals, outputting two square waves with the same frequency and duty cycle but inverse phase.

9. The dual-channel plasma speaker according to claim 4, characterized in that: The half-bridge driver output module includes IR10S chip U26, IRFP4110 MOS tube Q1 and MOS tube Q2, 2.2uF CBB capacitors U23 and U24, SS24 Schottky diode D4, IN4148 fast recovery diodes U22 and U25, output interface CN2, IR2110S chip amplifies the input signal to drive the half-bridge MOS tube, IR10S chip U26's 11th pin is connected to +5V, IR10S chip U26's 13th pin, 15th pin, 2nd pin is grounded, IR10S chip U26's 12th pin and 14th pin are signal input terminals, connected to the two output terminals of the signal generation module, IR10S chip U26's 3rd pin is connected to +12V, IR10S chip U26's 6th and 7th pins are connected to a bootstrap capacitor, the bootstrap capacitor uses a 105 chip capacitor, IR10S chip U26's 7th pin is connected to the cathode of diode D4, IR10S chip U26's 3rd pin is connected to the anode of diode D4, IR10S chip U26's 3rd and 2nd pins are connected to 10 4 chip capacitors, a coupling capacitor is connected between pins 11 and 15 of the IR10S chip U26. The coupling capacitor uses a 104 chip capacitor. Pin 8 of the IR10S chip U26 is the HO high-end MOS drive output, connected to the G pole of the MOS tube Q1 through the 10R gate resistor R24, and a fast recovery diode U25 is connected in reverse parallel at both ends of the R24 resistor. Pin 1 of the IR10S chip U26 is the LO low-end MOS drive output, connected to the G pole of the MOS tube Q2 through the 10R gate resistor R21, and a fast recovery diode U22 is connected in reverse parallel at both ends of the R21 resistor. U21 and U25 can speed up the shutdown of the MOS tube. The D pole of the MOS tube Q1 is connected to VCC, and the S pole of the MOS tube Q2 is grounded. Q1, Q2, U24, and U23 form a half-bridge structure, which is output through the interface CN2 to convert the VCC DC power into AC power for driving the high-voltage transformer.

Images