Atomic layer deposition equipment

Abstract

The utility model provides atomic layer deposition equipment. The atomic layer deposition equipment comprises a reaction chamber; the base is arranged at the bottom of the reaction chamber; the upper electrode is arranged at the top of the reaction chamber; the positive electrode of the voltage source is electrically connected with the upper electrode, the negative electrode of the voltage source is electrically connected with the base, the base is a lower electrode, and when the voltage source applies voltage, an electric field is generated between the upper electrode and the base. By adopting the atomic layer deposition equipment provided by the utility model to implement ALD or PEALD film deposition, the growth rate of the film can be improved, and the growth of an ultrathin (atomic weight-level film thickness) continuous film can be controlled; the step coverage range of the aspect ratio mode can be improved; the film growth temperature can be reduced, the impurity content of the film is reduced, and the compactness and electrochemical performance of the film are improved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to an atomic layer deposition device. Background Art

[0002] Atomic layer deposition (ALD) is a thin film deposition technology that repeatedly and alternately pumps gas-phase precursor molecules and co-reactants into a reaction chamber in pulses, forming thin films layer by layer through chemical adsorption reactions with active groups on the wafer surface. To improve the film deposition effect, plasma-enhanced atomic layer deposition (PEALD) can be used for thin film deposition. Using highly active and reactive plasma as a co-reactant, high-quality ultra-thin films can be prepared at low temperatures. This has the advantages of increasing the density of active sites on the wafer surface, reducing gas purge time, accelerating the efficiency of nucleation and growth, shortening nucleation delay time, and even avoiding nucleation delay, thereby improving wafer quality and density.

[0003] During the ALD or PEALD processes described above, the steric hindrance of the reaction source ligands can mask surface active sites, leading to pseudo-saturated adsorption and, in turn, making it difficult to grow ultra-thin films. Furthermore, the random thermal motion of the precursor molecules within the atomic layer deposition equipment results in random orientations when they reach the wafer surface. The direction, extent, and saturation of the chemical reaction on the wafer surface are uncontrollable, resulting in poor deposition performance, including uniformity, density, continuity, and three-dimensional conformability of the deposited film.

[0004] In related technologies, such as Figure 1 As shown, the chamber-type atomic layer deposition equipment includes a reaction chamber 11, a support seat 12 located at the bottom of the reaction chamber 11 (the support seat 12 is connected to the chamber wall of the reaction chamber 11), and a base 13 located on the support seat 12 (including an insulating layer and a substrate layer). In the atomic layer deposition equipment, an insulating layer (ceramic disk) 131 is arranged between the substrate layer 132 of the base 13 and the support seat 12. The insulating layer 131 directly isolates the substrate layer 132 from the support seat 12, and indirectly electrically isolates the substrate layer 132 from the chamber wall of the reaction chamber 11. With the chamber wall as the upper electrode and the substrate layer 132 as the lower electrode, an electric field can be generated by applying a voltage between the upper electrode and the lower electrode. The substrate layer 132 can be used to support a wafer. In an electric field environment, the precursor molecules are controlled to be arranged along the direction of the electric field on the wafer surface, thereby controlling the thin film generation process and improving the deposition effects such as the uniformity, density, continuity and three-dimensional adhesion of the deposited film.

[0005] However, the dipole moment caused by the electric field controls the precursor molecules (such as hydrogen superoxide and diethyl zinc) to align along the direction of the electric field. For the materials of the deposited thin films, which may include silicon oxide, silicon nitride, high dielectric constant materials (such as hafnium dioxide), low dielectric constant materials (such as silicon oxycarbon nitride), etc., the dipole moment caused by the electric field cannot be fully controlled, and may still cause the direction of the precursor molecules when they reach the wafer surface to be random. The direction, degree and saturation of the chemical reaction on the wafer surface are all uncontrollable, which in turn leads to poor deposition effects such as uniformity, density, continuity and three-dimensional adhesion of the deposited film. Utility Model Content

[0006] The technical problem to be solved by the present application is the poor thin film deposition effect of existing atomic layer deposition equipment.

[0007] To solve the above technical problems, the present application provides an atomic layer deposition device, a reaction chamber; a base, the base is arranged at the bottom of the reaction chamber; an upper electrode, the upper electrode is arranged at the top of the reaction chamber; a voltage source, the positive pole of the voltage source is electrically connected to the upper electrode, and the negative pole of the voltage source is electrically connected to the base, the base is the lower electrode, and when the voltage source applies voltage, an electric field is generated between the upper electrode and the base.

[0008] In some embodiments of the present application, the upper electrode includes: an electrode plate and a terminal; one end of the terminal is connected to the electrode plate, and the other end of the terminal is connected to the voltage source.

[0009] In some embodiments of the present application, the electrode plate is integrally formed, or the electrode plate is formed by winding a flexible metal material.

[0010] In some embodiments of the present application, the electrode plate includes a circular electrode plate adapted to the inner diameter of the reaction chamber, or a first rectangular electrode plate including the area to which the inner diameter belongs, or a plurality of second rectangular plates arranged along the inner diameter in a non-uniformly spaced manner.

[0011] In some embodiments of the present application, the flexible metal material is nickel.

[0012] In some embodiments of the present application, the atomic layer deposition equipment further includes a wafer boat, which is disposed on the base and is used to carry wafers.

[0013] In some embodiments of the present application, the base includes: an insulating layer; a substrate layer, the substrate layer is in direct contact with and located on the insulating layer, the wafer boat is arranged above the substrate layer, and the substrate layer is the lower electrode.

[0014] In some embodiments of the present application, the material of the substrate layer is metal or graphite.

[0015] In some embodiments of the present application, the upper electrode is disposed in the protective layer, and the protective layer is disposed on the top of the reaction chamber.

[0016] In some embodiments of the present application, the voltage source is a square wave AC voltage source with adjustable amplitude and direction.

[0017] In some embodiments of the present application, the atomic layer deposition equipment further includes: a precursor input device, which is used to input precursor molecules into the reaction chamber during the first time period; and a purge device, which is used to purge the reaction chamber during the second time period; wherein, the first time period is a time period when the voltage source outputs an effective voltage, and when the voltage source outputs the effective voltage, an electric field is generated between the upper electrode and the base.

[0018] Compared with the prior art, the technical solution of the present application may bring the following beneficial effects: (1) the use of the atomic layer deposition equipment provided by the present application to implement ALD or PEALD for thin film deposition can increase the film growth rate and control the growth of ultra-thin (atomic-level film thickness) continuous films; (2) the use of the atomic layer deposition equipment provided by the present application to implement ALD or PEALD for thin film deposition can increase the step coverage range of the aspect ratio mode; (3) the use of the atomic layer deposition equipment provided by the present application to implement ALD or PEALD for thin film deposition can reduce the film growth temperature, reduce the impurity content of the film, and improve the density and electrochemical properties of the film. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] The following figures describe in detail exemplary embodiments disclosed in this application. Like reference numerals denote similar structures throughout the several views of the drawings. Those skilled in the art will appreciate that these embodiments are non-limiting, exemplary embodiments, and that the drawings are provided for illustration and description purposes only and are not intended to limit the scope of this application. Other embodiments may also achieve the inventive intent of this application. It should be understood that the drawings are not drawn to scale.

[0020] Figure 1 This is a schematic diagram of the structure of an existing chamber-type atomic layer deposition device;

[0021] Figure 2 is a schematic structural diagram of an atomic layer deposition apparatus according to some embodiments of the present application;

[0022] Figure 3 is a schematic structural diagram of an electrode plate according to some embodiments of the present application;

[0023] Figure 4is a schematic structural diagram of another electrode plate according to some embodiments of the present application;

[0024] Explanation of the accompanying drawings: 11-reaction chamber, 111-protective layer, 12-support base, 13-base, 131 insulating layer, 132-substrate layer, 14-upper electrode, 141 electrode plate, 142-terminal, 15-voltage source, 16-precursor input device and 17-purge device. DETAILED DESCRIPTION

[0025] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following is a brief introduction to the drawings required for the description of the embodiments. Obviously, the drawings described below are only some examples or embodiments of the present application. For those of ordinary skill in the art, the present application can also be applied to other similar scenarios based on these drawings without creative work. Unless it is obvious from the language context or otherwise explained, the same reference numerals in the figures represent the same structure or operation. It should be clearly understood that the drawings are for illustration and description purposes only and are not intended to limit the scope of this specification.

[0026] It should be understood that the "module" and "circuit" used herein are a method for distinguishing different components, elements, parts, portions or assemblies at different levels. However, if other words can achieve the same purpose, the words can be replaced by other expressions.

[0027] The terms used in this application are for the purpose of describing specific example embodiments only and are not restrictive. When used in this specification, the terms "include", "comprise" and / or "contain" mean that the associated integers, steps, operations, elements and / or components exist, but do not exclude the existence of one or more other features, integers, steps, operations, elements, components and / or groups or that other features, integers, steps, operations, elements, components and / or groups may be added to the atomic layer deposition device. When describing the association of different components in this specification, it can be a direct relationship or an indirect relationship. For example, "A and B are connected" can mean that A and B are directly connected, or A and B are indirectly connected through other components.

[0028] In the embodiments of this application, the technical terms involved include:

[0029] 1. ALD or PEALD

[0030] ALD or PEALD consists of a series of discontinuous half-reactions, each of which includes four steps:

[0031] Step 1: The first precursor molecule is introduced, and the first precursor molecule undergoes a chemical adsorption reaction with the active groups on the surface of the base to generate gaseous by-products.

[0032] Step 2: Remove the remaining first precursor molecules and gaseous by-products generated by the reaction.

[0033] Step 3: The second precursor molecules are introduced to react with the first precursor molecules that have been chemically adsorbed on the surface of the base to form a thin film until all the first precursor molecules that have been chemically adsorbed on the surface of the base are consumed and the reaction stops automatically.

[0034] Step 4: Remove the unreacted second precursor molecules and the generated gaseous by-products.

[0035] 2. Gas-phase electric field effect

[0036] The gas-phase electric field effect refers to the changes in the induced dipole and molecular geometry of any molecule in an electric field. Specifically, the electric field changes the orientation of gas-phase molecules that are scattered in multiple directions, causing them to align in an orderly manner. In a non-uniform electric field, gas-phase molecules accelerate their aggregation in a specific direction.

[0037] In the electric field, the decomposition of the front driving molecules and ligands can be accelerated, the steric hindrance effect can be reduced, the surface chemical adsorption can be promoted, and the film growth can be accelerated.

[0038] During the thin film deposition process based on chamber-type atomic layer deposition equipment, the dipole moment caused by the electric field cannot be fully controlled, which may still cause the direction of the precursor molecules to be random when they reach the wafer surface, resulting in poor thin film deposition effect.

[0039] Based on the above analysis, if Figure 2 As shown, the atomic layer deposition equipment provided in the embodiment of the present application may include:

[0040] Reaction chamber 11;

[0041] The base 13 is arranged at the bottom of the reaction chamber 11;

[0042] an upper electrode 14 , the upper electrode 14 being disposed on the top of the reaction chamber 11 ;

[0043] A voltage source 15 , wherein the positive pole of the voltage source 15 is electrically connected to the upper electrode 14 , and the negative pole of the voltage source 15 is electrically connected to the base 13 , and the base 13 is the lower electrode 14 . When the voltage source 15 applies voltage, an electric field is generated between the upper electrode 14 and the base 13 .

[0044] In some embodiments of the present application, Figure 2As shown, the atomic layer deposition apparatus may further include a support seat 12 , wherein the support seat 12 is disposed at the bottom of the reaction chamber 11 , and the base 13 is disposed on the support seat 12 .

[0045] In the embodiment of the present application, during the ALD or PEALD process using an atomic layer deposition device, a thin film can be formed on the wafer accommodated in the reaction chamber 11 between the base 13 and the upper electrode 14. The thin film can serve as a spacer, offset, ESL, liner oxide, protection, HKMG, cap layer, PWF layer, or barrier, etc. The material of the thin film can be SIN, OX, SiOCN, HfO2, TiN, TaN, or TiO, etc.

[0046] In the embodiments of the present application, in order to improve the step coverage of the aspect ratio mode, improve the steric hindrance effect of the precursor molecule ligand, the random uncontrollability of the surface chemical reaction, and increase the film growth rate, the film growth and nucleation mechanism are regulated and an ultra-thin continuous conformal film is grown. During the precursor molecule pulse half-reaction stage in the ALD or PEALD process, an electric field with adjustable size and direction can be applied synchronously to the wafer surface. In this way, the effect of the electric field on the gas phase molecules can be utilized to achieve the regulation of film growth and nucleation mechanism and the growth of an ultra-thin continuous conformal film, thereby improving the deposition rate and quality of the film.

[0047] In some embodiments of the present application, the voltage source 15 is a square wave AC voltage source with adjustable amplitude and direction. The amplitude and direction of the square wave AC voltage source can be controlled by software.

[0048] In the embodiment of the present application, when the voltage source 15 applies a voltage, an electric field is generated between the upper electrode 14 and the base 13. By varying the amplitude and direction of the square wave AC voltage source, the magnitude and direction of the electric field can be varied. In this way, the magnitude and direction of the electric field can be adaptively varied based on the molecular composition of the precursor molecules and the material of the deposited thin film, further improving the deposition speed and quality of the thin film.

[0049] In some embodiments of the present application, Figure 3 As shown, the upper electrode 14 includes: an electrode plate 141 and a terminal 142 ; one end of the terminal 142 is connected to the electrode plate 141 , and the other end of the terminal 141 is connected to the voltage source 15 .

[0050] In some embodiments of the present application, the electrode plate 141 is parallel to the base 13. In this way, the electric field generated between the upper electrode 14 and the base 13 is evenly distributed in the portion between the electrode plate 141 and the base 13, thereby making the thickness of the film grown on the base 13 uniform.

[0051] The electrode plate 141 and the terminal 142 may be connected via a fixing post. The fixing post may be a quartz post. The fixing post utilizes the high insulation properties of the quartz material so that the fixing post does not affect the current loss of the electrode plate 141, nor does it affect the electric field strength and direction of the electric field generated between the upper electrode 14 and the base 13, thereby maintaining the stability of the electric field generated between the upper electrode 14 and the base 13.

[0052] In some embodiments of the present application, the electrode plate 141 is integrally formed, or the electrode plate 141 is formed by winding a flexible metal material.

[0053] In some embodiments of the present application, the electrode plate 141 may be made of a rigid metal material. Using a rigid metal material formed in one step to form the electrode plate 141 ensures its quality and stability, ultimately improving the stability of the electric field generated between the upper electrode 14 and the base 13 and ensuring the quality of the film.

[0054] In some embodiments of the present application, the electrode plate 141 may also be made of a flexible metal material. The electrode plate 141, formed by winding a flexible metal material, can be bent into a predetermined shape based on the electric field requirements of the wafer to be deposited. In some embodiments of the present application, the flexible metal wire may be made of nickel.

[0055] In some embodiments of the present application, Figure 4 As shown in (a), the electrode plate 141 includes a circular plate adapted to the inner diameter of the reaction chamber 11, or as Figure 4 As shown in (b) of FIG. 1 , a first rectangular plate including the region of the inner diameter, or as shown in FIG. Figure 4 As shown in (c), a plurality of second rectangular plates are arranged along the inner diameter in a non-uniformly spaced manner.

[0056] It should be noted that the first rectangular plate is an integrally formed rigid plate, or a flexible plate formed by continuously bending a flexible metal material. The second rectangular plate is an integrally formed rigid plate, or a flexible plate formed by continuously bending a flexible metal material. The first rectangular plate and the plurality of second rectangular plates spaced apart along the inner diameter have the same outer contour.

[0057] In the embodiment of the present application, if the electrode plate 141 is a circular plate, a uniform electric field is generated between the upper electrode 14 and the base 13. If the electrode plate 141 is a first rectangular plate centered on the inner diameter, a non-uniform electric field is generated between the upper electrode 14 and the base 13. If the electrode plate 141 is a plurality of second rectangular plates arranged along the inner diameter in a non-uniformly spaced manner, and the plurality of second rectangular plates are connected in series, a non-uniform electric field is generated between the upper electrode 14 and the base 13.

[0058] In the embodiment of the present application, the reaction chamber 11 may include an outer chamber and an inner chamber, and the support seat 12 and the base 13 are arranged inside the inner chamber.

[0059] In some embodiments of the present application, Figure 2 As shown, the upper electrode 14 is disposed in the protective layer 111 , and the protective layer 111 is disposed on the top of the reaction chamber 11 .

[0060] In the embodiment of the present application, the protective layer 111 can be a sealing interlayer made of quartz and fixed to the top of the reaction chamber. The protective layer 111 utilizes the properties of quartz material (such as high temperature resistance, small thermal expansion coefficient, high insulation and corrosion resistance, etc.), so that the protective layer 111 does not affect the electric field strength and direction of the electric field generated between the upper electrode 14 and the base 13, and can also isolate the upper electrode 14 from the precursor molecules, preventing the upper electrode 14 from being corroded, thereby maintaining the stability of the electric field generated between the upper electrode 14 and the base 13 and improving the service life of the upper electrode 14.

[0061] In the embodiment of the present application, the electrode plate 141 is fixed in the protective layer 111 , and at the same time, one end of the terminal 142 is located in the protective layer 111 , and the other end of the terminal 142 extends out of the protective layer 111 .

[0062] In some embodiments of the present application, a wafer boat is disposed on the base 13, and the wafer boat is used to carry wafers. It is understood that after the wafers are placed on the wafer boat, ALD or PEALD is started.

[0063] In some embodiments of the present application, Figure 2 As shown, the base 13 includes:

[0064] Insulation layer 131,

[0065] The substrate layer 132 is directly in contact with and located on the insulating layer 131 . The wafer boat is disposed above the substrate layer 132 . The substrate layer 132 serves as the lower electrode.

[0066] The substrate layer is made of metal or graphite. The insulating layer 131 may be directly in contact with and located on the support base 12 .

[0067] In the embodiment of the present application, the insulating layer 131 and the support base 12 allow the substrate layer 132 to be suspended from the chamber wall of the reaction chamber 11. Thus, when the voltage source applies a voltage, an electric field is generated between the top electrode 14 and the substrate layer 132, regardless of whether the chamber wall of the reaction chamber 11 and the support base 12 are grounded. This improves the stability of the electric field generated between the top electrode 14 and the substrate layer 132, thereby ensuring the quality of the thin film.

[0068] In some embodiments of the present application, Figure 2 As shown, the atomic layer deposition equipment also includes:

[0069] a precursor input device 16, the precursor input device 16 being used to input precursor molecules into the reaction chamber during the first time period;

[0070] a purge device 17, the purge device 17 being used to purge the reaction chamber 11 during the second time period;

[0071] The first time period is a time period during which the voltage source 15 outputs an effective voltage. When the voltage source 15 outputs the effective voltage, an electric field is generated between the upper electrode 14 and the base 13 .

[0072] In some embodiments of the present application, a wafer boat is disposed on the base 13 , and the wafer boat is used to carry wafers.

[0073] In the embodiment of the present application, the second time period may be a time period during which the voltage source 15 outputs an invalid voltage. During the ALD or PEALD process, the precursor molecules include a first precursor molecule and a second precursor molecule. According to the half-reaction process of the ALD or PEALD, the first time period for inputting the first precursor molecule and the second time period for purging the first precursor molecule, as well as the first time period for inputting the second precursor molecule and the second time period for purging the second precursor molecule, can be identified as a deposition cycle. After multiple deposition cycles, a thin film having a certain thickness can be generated on the wafer surface.

[0074] In an embodiment of the present application, during the ALD or PEALD process, since the precursor molecules or attached functional groups and ligands are relatively large, and the active groups on the wafer surface are relatively small, some chemical adsorption sites will be masked by the precursor molecule ligands and affect the saturated adsorption or chemical reaction degree of the reaction source. As a result, in each ALD or PEALD process, only a few precursor molecules can be successfully chemically adsorbed at the active site position, forming pseudo-saturated adsorption. Pseudo-saturated adsorption affects the nucleation and growth rate of the film. Moreover, in conventional ALD or PEALD processes, the precursor molecules perform irregular thermal motion in the reaction chamber, resulting in the direction of the precursor molecules when they reach the wafer surface being random, and the direction, degree and saturation of the chemical reaction on the wafer surface are all uncontrollable to a large extent, which affects the uniformity, density, continuity, three-dimensional conformability, etc. of the deposited film. During the pulse half-reaction stage of the precursor molecules, an electric field with adjustable size and direction is synchronously applied to the wafer surface. The polarization force of the electric field on the gas-phase molecules is used to make the molecules arrange more tightly and regularly. The gradient force of the electric field on the gas-phase molecules is used to make the molecules aggregate in a certain direction to increase the chemical adsorption of the precursor molecules on the wafer surface. At the same time, the energy brought by the electric field is used to accelerate the decomposition of the precursor molecules and ligands, greatly reducing the steric hindrance effect, promoting surface chemical adsorption, and accelerating thin film growth.

[0075] Once the deposited atoms begin to interact with the surface and form a deposited atomic layer or nanoparticles, the electric field is used to increase the surface energy of NPs or islands during formation, inducing surface diffusion of the deposited atoms or NPs and affecting the morphology and properties of the material. If a highly active and highly reactive plasma gas is used in the third step of ALD or PEALD instead of a traditional co-reactant, the effect of the electric field on the plasma gas needs to be considered. Applying an electric field during the plasma gas pulse will accelerate the bombarding ions and increase the concentration of active particles. The electric field will also strengthen the collision between the active particles in the plasma gas and the particles adsorbed on the wafer surface, breaking some relatively weak bonds. The precursor molecules can be chemically adsorbed onto the active groups more, accelerating the reaction rate.

[0076] The beneficial effects that may be brought about by the embodiments of the present application include but are not limited to: (1) Using the atomic layer deposition equipment provided by the present application to implement ALD or PEALD for thin film deposition can increase the film growth rate and can control the growth of ultra-thin (atomic-level film thickness) continuous films; (2) Using the atomic layer deposition equipment provided by the present application to implement ALD or PEALD for thin film deposition can increase the step coverage range of the aspect ratio mode; (3) Using the atomic layer deposition equipment provided by the present application to implement ALD or PEALD for thin film deposition can reduce the film growth temperature, reduce the impurity content of the film, and improve the density and electrochemical properties of the film.

[0077] The process of achieving the above beneficial effects includes:

[0078] (1) The film growth rate is determined by the deposition cycle. Ideally, one deposition cycle can grow an entire atomic layer (all the first precursor molecules are adsorbed on the active sites on the wafer surface). The size of the atoms determines the thickness of the deposited film, but in reality, less than 60% of the active sites are adsorbed in each cycle (the probability of adsorption of active sites of metals or precious metals is even lower). After applying an electric field, the probability of the active sites on the wafer surface being adsorbed by precursor molecules can be increased in each deposition cycle. For ALD or PEALD, the active sites that were not adsorbed by precursor molecules in the previous deposition cycle need to be adsorbed by precursor molecules in the next deposition cycle, but the precursor molecules may also be adsorbed on the active sites that have already grown the film, which results in ALD growing a complete film requiring multiple deposition cycles. After applying an electric field, the probability of the surface active sites being chemically adsorbed by precursor molecules in each deposition cycle is increased, and a complete film can be deposited in fewer deposition cycles. The thickness of the film is controlled by the deposition cycle.

[0079] (2) Step coverage can be obtained by calculating the percentage of the thickness of the film deposited on the bottom of the wafer to the thickness of the film deposited on the sidewall of the wafer. Generally, if the step coverage is less than 1, it means that the film grows faster on the sidewall of the wafer than on the bottom of the wafer, which means that it is more difficult for the precursor molecules to enter the bottom of the groove. After applying an electric field to the wafer, the direction of the electric field is toward the bottom of the wafer, making it easier for the precursor molecules to reach the bottom of the groove, thereby improving the step coverage. The step coverage can be adjusted by adjusting the intensity of the electric field.

[0080] (3) When precursor molecules are chemically adsorbed on the wafer surface, they need to overcome the energy barrier required for the chemical reaction. The electric field can provide energy for the reaction, driving the surface reaction without the need for very high temperatures. This can lower the film growth temperature, reduce the impurity content of the film, and improve the film's density and electrochemical performance.

[0081] It should be noted that different embodiments may produce different beneficial effects. In different embodiments, the beneficial effects that may be produced may be any one or a combination of the above, or any other possible beneficial effects.

[0082] In summary, after reading the contents of this application, those skilled in the art will understand that the foregoing contents are presented by way of example only and are not intended to be limiting. Although not expressly stated herein, those skilled in the art will understand that this application is intended to encompass various reasonable changes, improvements, and modifications to the embodiments. Such changes, improvements, and modifications are within the spirit and scope of the exemplary embodiments of this application.

[0083] It should also be understood that although the terms first, second, third, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. Therefore, without departing from the teachings of the present application, the first element in some embodiments may be referred to as the second element in other embodiments. The same reference numerals or the same reference designators represent the same elements throughout the specification.

Claims

1. An atomic layer deposition device, characterized in that: include: reaction chamber; a base, the base being arranged at the bottom of the reaction chamber; an upper electrode, the upper electrode being disposed on the top of the reaction chamber; A voltage source, wherein the positive pole of the voltage source is electrically connected to the upper electrode, the negative pole of the voltage source is electrically connected to the base, and the base is the lower electrode. When the voltage source applies voltage, an electric field is generated between the upper electrode and the base.

2. The atomic layer deposition apparatus according to claim 1, wherein: The upper electrode includes: an electrode plate and a terminal; one end of the terminal is connected to the electrode plate, and the other end of the terminal is connected to the voltage source.

3. The atomic layer deposition apparatus according to claim 2, wherein: The electrode plate is integrally formed, or the electrode plate is formed by winding a flexible metal material.

4. The atomic layer deposition apparatus according to claim 3, wherein: The flexible metal material is nickel.

5. The atomic layer deposition apparatus according to claim 2, wherein: The electrode plate includes a circular electrode plate adapted to the inner diameter of the reaction chamber, or a first rectangular electrode plate including the area corresponding to the inner diameter, or a plurality of second rectangular plates arranged along the inner diameter in a non-uniformly spaced manner.

6. The atomic layer deposition apparatus according to claim 1, wherein: The atomic layer deposition equipment further includes a wafer boat, which is disposed on the base and is used for carrying wafers.

7. The atomic layer deposition apparatus according to claim 6, wherein: The base comprises: Insulation layer; A substrate layer is directly in contact with and located on the insulating layer. The wafer boat is arranged above the substrate layer. The substrate layer serves as the lower electrode.

8. The atomic layer deposition apparatus according to claim 7, wherein: The material of the substrate layer is metal or graphite.

9. The atomic layer deposition apparatus according to claim 1, wherein: The upper electrode is arranged in a protective layer, and the protective layer is arranged on the top of the reaction chamber.

10. The atomic layer deposition apparatus according to claim 1, wherein: The voltage source is a square wave AC voltage source with adjustable amplitude and direction.

11. The atomic layer deposition apparatus according to claim 10, wherein: The atomic layer deposition apparatus further comprises: a precursor input device, the precursor input device being used to input precursor molecules into the reaction chamber during a first time period; a purge device, the purge device being used to purge the reaction chamber during a second time period; The first time period is a time period during which the voltage source outputs an effective voltage. When the voltage source outputs the effective voltage, an electric field is generated between the upper electrode and the base.

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